Display device and method for manufacturing the display device

Abstract

A display device and a method of manufacturing the display device are provided. The display device includes: a first light-emitting element to a third light-emitting element, each including an emitting layer that emits light in a first direction; an encapsulation layer covering the first light-emitting element to the third light-emitting element; a first light-shielding layer disposed on the encapsulation layer, the first light-shielding layer including a first set of openings corresponding to the first light-emitting element to the third light-emitting element; a metal layer disposed on an inner surface defining the first set of openings, wherein the width of the metal layer in a second direction perpendicular to the first direction (or perpendicular to the first direction) gradually decreases along the first direction; a first color conversion layer; a second color conversion layer; and a light-transmitting layer, the first color conversion layer, the second color conversion layer, and the light-transmitting layer corresponding to the first light-emitting element to the third light-emitting element, respectively.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0102705, filed on August 14, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] One or more aspects of the embodiments of this disclosure relate to a display device and a method of manufacturing the display device, for example, to a display device having improved display quality and a method of manufacturing the display device. Background Technology

[0003] With the development of various electronic devices, such as mobile phones, personal digital assistants (PDAs), computers, and / or large televisions (TVs), a wide variety of display devices suitable for them have also been developed. For example, liquid crystal displays (LCDs) including backlight units and organic light-emitting displays that emit different colors of light in each color region are already widely used in the market. Recently, display devices incorporating quantum dot color conversion layers (QD-CCLs) have been developed. Quantum dots are excited by incident light to emit light with a wavelength longer than that of the incident light, and the incident light can typically have a relatively low wavelength. Summary of the Invention

[0004] One or more aspects of embodiments of this disclosure relate to a display device and a method of manufacturing the display device, which has improved display quality by improving brightness and light conversion efficiency while preventing or reducing color mixing between pixels. However, such aspects or technical problems are exemplary, and the disclosure is not limited thereto.

[0005] Additional aspects will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practice of the disclosed embodiments.

[0006] One or more embodiments of this disclosure provide a display device comprising: a first light-emitting element, a second light-emitting element, and a third light-emitting element, each including an emitting layer that emits light of a first color in a first direction; an encapsulation layer covering the first to third light-emitting elements; a first light-shielding layer disposed on the encapsulation layer, the first light-shielding layer including a first set of openings corresponding to the first to third light-emitting elements respectively; a metal layer disposed on the inner surface of the first light-shielding layer defining the first set of openings, wherein the width of the metal layer in a second direction perpendicular to the first direction (or perpendicular to the first direction) gradually decreases along the first direction; a first color conversion layer disposed in a first opening of the first set of openings, corresponding to the first light-emitting element; a second color conversion layer disposed in a second opening of the first set of openings, corresponding to the second light-emitting element; and a light-transmitting layer disposed in a third opening of the first set of openings, corresponding to the third light-emitting element.

[0007] The display device may also include a liquid-resistant layer on the first light-shielding layer, the liquid-resistant layer being located in a plane between the first opening portion, the second opening portion and the third opening portion in the first set of opening portions.

[0008] The thickness of the metal layer can be less than about 2 μm.

[0009] The metal layer may include titanium oxide (TiO2) and / or silver (Ag) nanoparticles.

[0010] The metal layer may include a polymer.

[0011] The polymer of the metal layer may include condensation polymers of bifunctional monomers.

[0012] Bifunctional monomers may include hexanediol diacrylate (1,6-hexanediol diacrylate, HDDA).

[0013] The display device may further include a second light-shielding layer disposed on the first light-shielding layer, the second light-shielding layer including a second set of openings overlapping the first set of openings.

[0014] The display device may further include a first color filter layer, a second color filter layer, and a third color filter layer, all of which are arranged in the second set of openings and are respectively stacked with the first color conversion layer, the second color conversion layer, and the light-transmitting layer.

[0015] The inner surface of the first set of openings defined by the first light-shielding layer may include a tapered inclined surface.

[0016] The metal layer may include a first surface in contact with the first light-shielding layer and a second surface opposite to the first surface, wherein the first angle may be greater than the second angle, the first angle is formed by the lower surface of the first light-shielding layer facing the encapsulation layer and the first surface of the metal layer, and the second angle is formed by the lower surface of the first light-shielding layer and the second surface of the metal layer.

[0017] One or more embodiments of this disclosure provide a method for manufacturing a display device, the method comprising the steps of: preparing a substrate on which a first light-emitting element, a second light-emitting element, and a third light-emitting element are disposed, each of the first, second, and third light-emitting elements including an emitting layer of a first color; forming a first light-shielding layer on the substrate, the first light-shielding layer including a first set of openings corresponding to the first to third light-emitting elements respectively; forming a liquid-resistant layer on the first light-shielding layer; spraying a first ink into the first set of openings, the first ink including at least two solvents; and drying the first ink to form a metal layer in the first set of openings.

[0018] The first ink may contain at least two solvents, including a first solvent and a second solvent having different vapor pressures from each other.

[0019] The first ink may include 50 wt% or more of the first solvent.

[0020] The first solvent can have a higher vapor pressure than the second solvent.

[0021] The steps of drying the first ink may include a first drying task of drying (evaporating) a first solvent and a second drying task of drying (evaporating) a second solvent.

[0022] The first ink may include a mixture of titanium oxide (TiO2) and / or silver (Ag) nanoparticles and bifunctional monomers.

[0023] The first ink mixture can be less than 30 wt%.

[0024] The first ink's bifunctional monomer may include hexanediol diacrylate (1,6-hexanediol diacrylate, HDDA).

[0025] The method may also include performing a photocuring process and / or a thermal curing process after the first ink has dried.

[0026] The method may also include spraying a second ink into the first set of openings, the second ink comprising scattering particles and quantum dots.

[0027] Other features and advantages of this disclosure will become more apparent from the accompanying drawings, claims, and detailed embodiments.

[0028] These general and specific embodiments can be implemented using systems, methods, computer programs, or combinations thereof. Attached Figure Description

[0029] The above and other aspects, features and advantages of certain embodiments disclosed will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 This is a schematic plan view of a display device according to an embodiment;

[0031] Figure 2 This is an equivalent circuit diagram of a pixel circuit connected to a light-emitting element included in a display device, according to an embodiment.

[0032] Figure 3 It is shown schematically. Figure 1 A cross-sectional view of a portion of a display device;

[0033] Figure 4 This is an enlarged cross-sectional view showing a first color conversion layer, a second color conversion layer, and a light-transmitting layer in a display device according to an embodiment;

[0034] Figures 5A-5G This is a cross-sectional view illustrating some operations of a method for manufacturing a display device according to an embodiment;

[0035] Figure 6 This is a cross-sectional view showing a portion of a display device according to another embodiment; and

[0036] Figures 7A-7C This is a cross-sectional view illustrating some operations of a method for manufacturing a display device according to another embodiment. Detailed Implementation

[0037] Referring now to the embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always denote the same elements and may not be described repeatedly. In this respect, the presented embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain aspects of this description. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” may mean only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0038] Because this description allows for various modifications and numerous embodiments, certain embodiments will be shown in the accompanying drawings and described in the written description. The effects and features of one or more embodiments, and methods of implementing them, will become apparent from the following detailed description of one or more embodiments taken in conjunction with the accompanying drawings. However, the presented embodiments may take different forms and should not be construed as limited to the description set forth herein.

[0039] While terms such as "first" and "second" can be used to describe various components, such components are not necessarily limited to these terms. These terms are used to distinguish one component from another.

[0040] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “one,” and “the” are also intended to include the plural forms.

[0041] It will be understood that the terms “comprising” and / or “including” as used herein, and variations thereof, indicate the presence of the stated feature or component, but do not preclude the addition of one or more other features or components.

[0042] It will also be understood that when a layer, region, or component is referred to as being "on" another layer, region, or component, that layer, region, or component may be directly or indirectly on said other layer, region, or component. That is, for example, intermediate layers, regions, or components may exist. When an element is referred to as being "directly on" another element, there is no intermediate element.

[0043] For ease of explanation, the dimensions of elements in the accompanying drawings may be exaggerated or reduced. For example, since the dimensions and thicknesses of elements in the accompanying drawings are arbitrarily shown for ease of explanation, the disclosure is not limited thereto.

[0044] When embodiments can be implemented differently, certain process sequences can be performed differently than the described sequence. For example, two consecutively described processes can be performed substantially simultaneously or in the reverse order of the described sequence.

[0045] In this specification, the expression "A and / or B" means only A, only B, or both A and B. Throughout the disclosure, the expression "at least one (species / being) selected from A and B" means only A, only B, or both A and B.

[0046] It will also be understood that when a layer, region, or component is referred to as being connected to each other, the layer, region, or component may be directly connected to each other, or indirectly connected to each other with an intermediate layer, region, or component placed between them. For example, when a layer, region, or component is referred to as being electrically connected to each other, the layer, region, or component may be directly electrically connected to each other, or indirectly electrically connected to each other with an intermediate layer, region, or component placed between them. When an element is referred to as being "directly connected" to another element, there is no intermediate element.

[0047] The x-axis, y-axis, and z-axis are not limited to the three axes of a Cartesian coordinate system, and in some embodiments, they can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can represent directions that are perpendicular to each other, or they can represent directions that are not perpendicular to each other.

[0048] Figure 1 This is a schematic plan view of the display device 1 according to an embodiment.

[0049] Reference Figure 1 The display device 1 may include a display area DA and a peripheral area PA located outside the display area DA. The display device 1 may provide an image by means of an array of multiple pixels PX arranged in two dimensions in the display area DA. Pixel PX may include a first pixel PX1, a second pixel PX2, and a third pixel PX3. The peripheral area PA is an area where no image is provided and may completely or partially surround the display area DA. Drivers, etc., that provide electrical signals or power to the pixel circuits corresponding to each pixel PX may be located in the peripheral area PA. Pads ("pads", or solder pads) to which electronic components and / or printed circuit boards can be connected may be located in the peripheral area PA.

[0050] Display device 1 may include an organic light-emitting diode (OLED) as a light-emitting element, but display device 1 of this disclosure is not limited thereto. In another embodiment, display device 1 may be a light-emitting display including an inorganic light-emitting diode (e.g., an inorganic light-emitting display or an inorganic electroluminescent (EL) display). The inorganic light-emitting diode may include a PN junction diode comprising one or more inorganic semiconductor materials (e.g., an inorganic light-emitting diode may be a PN junction diode comprising one or more inorganic semiconductor materials). When a voltage is applied to the PN junction diode in the forward direction, holes and electrons are injected, and the energy generated due to the recombination of holes and electrons can be converted into light energy to emit light of a selected color. Inorganic light-emitting diodes may have widths ranging from a few micrometers to several hundred micrometers, and in some embodiments, inorganic light-emitting diodes may be referred to as micro light-emitting diodes (LEDs).

[0051] Figure 2 This is an equivalent circuit diagram of a pixel circuit PC connected to a light-emitting element included in a display device 1, according to an embodiment.

[0052] Reference Figure 2 Display device 1 (see Figure 1 The device may include a light-emitting element and a pixel circuit PC. The light-emitting element may include a light-emitting diode, such as an organic light-emitting diode (OLED). The OLED may be electrically connected to the pixel circuit PC and may receive a driving voltage through the pixel circuit PC to emit light. The light-emitting element may emit light through an emitting region.

[0053] The pixel circuit PC may include a storage capacitor and a plurality of thin-film transistors. In an embodiment, the pixel circuit PC may include a first thin-film transistor T1, a second thin-film transistor T2, and a storage capacitor Cap.

[0054] The second thin-film transistor T2, which is a switching thin-film transistor, can be connected to the scan line SL and the data line DL, and can transmit the data voltage (or data signal) input from the data line DL to the first thin-film transistor T1 based on the switching voltage (or switching signal) input from the scan line SL.

[0055] The storage capacitor Cap can be connected to the second thin-film transistor T2 and the drive voltage line PL, and can be configured to store a voltage corresponding to the difference between the voltage received from the second thin-film transistor T2 and the first power supply voltage ELVDD applied to the drive voltage line PL. The storage capacitor Cap can include at least a first storage plate Cap1 and a second storage plate Cap2.

[0056] The first thin-film transistor T1 is a driving thin-film transistor. T1 can be connected to a driving voltage line PL and a storage capacitor Cap, and is configured to control the driving current flowing from the driving voltage line PL to the organic light-emitting diode (OLED) based on the voltage value stored in the storage capacitor Cap. The OLED can emit light with a certain brightness according to the driving current. The counter electrode (e.g., cathode) of the OLED can be configured to receive a second power supply voltage ELVSS.

[0057] although Figure 2 The pixel circuit PC in the present invention includes two thin-film transistors and one storage capacitor, but this disclosure is not limited thereto. For example, the pixel circuit PC may include three or more thin-film transistors and / or two or more storage capacitors. In an embodiment, the pixel circuit PC may include seven thin-film transistors and one storage capacitor. The number of thin-film transistors and the number of storage capacitors may be appropriately varied depending on the design of the pixel circuit PC. However, for ease of illustration, the following description will assume that the pixel circuit PC includes two thin-film transistors and one storage capacitor.

[0058] Figure 3It schematically shows along Figure 1 The line III-III' in the middle is intercepted Figure 1 A cross-sectional view of a portion of the display device 1.

[0059] Reference Figure 3 The display device 1 may include multiple pixels PX. Pixel PX may include, for example, first pixel PX1 to third pixel PX3. The display device 1 includes multiple layers, and for ease of description, the stacking order will be described primarily below.

[0060] Display device 1 may include a substrate 100. Substrate 100 may include glass, metal, or polymer resin. For example, substrate 100 may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and / or cellulose acetate propionate. When substrate 100 includes the aforementioned polymer resins, substrate 100 may be flexible and / or bendable. For example, substrate 100 may have a multilayer structure comprising two layers and a barrier layer between the two layers, each of the two layers comprising a polymer resin, and the barrier layer comprising an inorganic material. For example, the barrier layer may include inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0061] Multiple light-emitting elements 200 can be arranged above the substrate 100. Figure 3 A first light-emitting element 210, a second light-emitting element 220, and a third light-emitting element 230 are shown. In addition to the light-emitting element 200, pixel circuits PCs electrically connected to the light-emitting elements 200 may also be located above the substrate 100. The pixel circuits PCs (e.g., such as...) Figure 2 (As shown) includes a thin-film transistor (TFT) and a storage capacitor (Cap), and the first light-emitting element 210, the second light-emitting element 220 and the third light-emitting element 230 can be located above the pixel circuit PC.

[0062] Each thin-film transistor (TFT) may include a semiconductor layer Act, a gate electrode GE superimposed on the channel region of the semiconductor layer Act, and a source electrode SE and a drain electrode DE respectively connected to the source region and drain region of the semiconductor layer Act.

[0063] The semiconductor layer Act may include polycrystalline silicon. In some embodiments, the semiconductor layer Act may include amorphous silicon. In some embodiments, the semiconductor layer Act may include an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The semiconductor layer Act may include a channel region, and the source and drain regions may be doped with impurities.

[0064] The gate electrode GE may include low-resistivity conductive materials such as molybdenum (Mo), aluminum (Al), copper (Cu) and / or Ti, and may have a single structure or a multilayer structure including the above materials.

[0065] The source electrode SE or drain electrode DE may include Al, platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), Cr, calcium (Ca), Mo, Ti, tungsten (W), and / or Cu, and may have a single structure or a multilayer structure comprising the aforementioned materials. In some embodiments, the source electrode SE or drain electrode DE may also include a material such as indium tin oxide (ITO) on the layer comprising the aforementioned metals. For example, the source electrode SE or drain electrode DE may be varied, such as having a stacked structure of Ti layer / Al layer / Ti layer or a stacked structure comprising Ti layer / Cu layer / ITO layer.

[0066] A storage capacitor Cap may include a first storage plate Cap1 and a second storage plate Cap2 stacked on top of each other. The first storage plate Cap1 may be located on the same layer on which the gate electrode GE is disposed, and may contain the same material as the gate electrode GE. The second storage plate Cap2 may be located on the same layer on which the source electrode SE or drain electrode DE is disposed, and may contain the same material as the source electrode SE or drain electrode DE. An insulating layer may be located between the first storage plate Cap1 and the second storage plate Cap2 of the storage capacitor Cap, and the first storage plate Cap1 and the second storage plate Cap2 may be stacked on top of each other to form a capacitor. In this case, the insulating layer may serve as the dielectric layer of the storage capacitor Cap.

[0067] although Figure 3 The diagram shows the gate electrode GE of the thin-film transistor (TFT) and the first storage plate Cap1 of the storage capacitor Cap arranged separately, but the storage capacitor Cap can be stacked with the TFT. In this case, the gate electrode GE of the TFT can serve as the first storage plate Cap1 of the storage capacitor Cap.

[0068] Buffer layer 110 may be located between substrate 100 and semiconductor layer Act. Buffer layer 110 may reduce or prevent the penetration of foreign matter, moisture, and / or ambient air from the bottom (e.g., below) of substrate 100, and may provide a flat surface on substrate 100 (e.g., planarize substrate 100). Buffer layer 110 may include inorganic insulating materials (such as silicon oxide, silicon oxynitride, and / or silicon nitride), and may have a single-layer or multi-layer structure including the aforementioned materials.

[0069] To ensure electrical insulation between the semiconductor layer Act and the gate electrode GE, a gate insulating film 130 may be located between the semiconductor layer Act and the gate electrode GE. The gate insulating film 130 may include inorganic materials (such as silicon oxide, silicon nitride, and / or silicon oxynitride).

[0070] In some embodiments, the interlayer insulating layer 150 may be located above the gate electrode GE and the first memory plate Cap1. The interlayer insulating layer 150 may include an inorganic material (such as silicon oxide, silicon nitride, and / or silicon oxynitride). The source electrode SE, the drain electrode DE, and the second memory plate Cap2 may be located above the interlayer insulating layer 150. The interlayer insulating layer 150 including such an inorganic material may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). This will also apply to the following embodiments and their modifications.

[0071] The planarization layer 170 can be located above the thin-film transistor (TFT). For example, when an organic light-emitting diode (OLED) is used... Figure 3 As shown, when positioned above the thin-film transistor TFT, the planarization layer 170 can substantially planarize the protective layer covering the thin-film transistor TFT. The planarization layer 170 may include, for example, organic materials (such as acrylic, benzocyclobutene (BCB), and / or hexamethyldisiloxane (HMDSO)). Although Figure 3 The planarization layer 170 is shown to have a single-layer structure, but it can be modified in various ways. In some embodiments, for example, the planarization layer 170 may have a multi-layer structure.

[0072] The first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 may be located above the planarization layer 170 of the substrate 100. In an embodiment, the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 may all have the same structure. Hereinafter, for ease of explanation, the first light-emitting element 210 will be described.

[0073] The stacked structure of the first pixel electrode 211, the intermediate layer 203, and the counter electrode 205 can form a first light-emitting element 210. An organic light-emitting diode (OLED) can be used as the light-emitting element. The OLED can emit light of a first color in a first direction (e.g., along the Z direction), and the emission region of the OLED can correspond to pixel PX.

[0074] For example, the first light-emitting element 210 may include a first pixel electrode 211, a counter electrode 205, and an intermediate layer 203 therebetween. The intermediate layer 203 may include an emitting layer. The first pixel electrode 211 may be contacted with one of the source electrode SE and the drain electrode DE via a contact hole formed in the planarization layer 170, such that the first pixel electrode 211 is electrically connected to the thin-film transistor TFT. The first pixel electrode 211 includes a transparent conductive layer comprising a transparent conductive oxide (such as indium tin oxide (ITO), In2O3, and / or indium zinc oxide (IZO)) and a metal layer comprising a metal (such as Al and / or Ag). For example, the first pixel electrode 211, the second pixel electrode 221, and the third pixel electrode 231 may each have a three-layer structure of ITO / Ag / ITO.

[0075] The upper insulating layer 190 may be located above the planarization layer 170. The upper insulating layer 190 may have one or more openings through which the central portion of each of the first pixel electrode 211, the second pixel electrode 221, and the third pixel electrode 231 is exposed. The upper insulating layer 190 can prevent or reduce arcing or similar phenomena between the edges of the first pixel electrode 211, the second pixel electrode 221, and the third pixel electrode 231 and the counter electrode 205 by increasing the distance between them (e.g., in non-pixel regions). The upper insulating layer 190 may comprise organic materials such as polyimide and / or HMDSO.

[0076] The intermediate layer 203 includes an emission layer and may be located above the first pixel electrode 211. The emission layer may emit light of a first color. The emission layer may emit light of a first color (e.g., blue light) having a center wavelength of, for example, about 450 nm to about 495 nm.

[0077] Intermediate layer 203 may comprise low molecular weight materials and / or high molecular weight materials. When intermediate layer 203 comprises low molecular weight materials, it may have a structure in which the hole injection layer (HIL), hole transport layer (HTL), emitter layer (EML), electron transport layer (ETL), and electron injection layer (EIL) are stacked (or stacked into) a single (e.g., monolithic) or multiple (e.g., laminated) structure. Intermediate layer 203 may be formed by vacuum deposition. When intermediate layer 203 comprises high molecular weight materials, it may have a structure including HTL and EML. In this case, HTL may comprise poly(3,4-ethylenedioxythiophene) (PEDOT), and EML may comprise poly(phenylenevinylene) (PPV) polymers and / or polyfluorene polymers. Intermediate layer 203 may be formed by screen printing, inkjet printing, deposition, and / or laser-induced thermal imaging (LITI). However, intermediate layer 203 is not necessarily limited to these methods. Intermediate layer 203 may have any suitable structure.

[0078] For example, the intermediate layer 203 can be integrally formed on the first pixel electrode 211, the second pixel electrode 221, and the third pixel electrode 231. For example, the emission layer and the aforementioned functional layers (such as HIL, HTL, EML, ETL, and / or EIL) can be integrally formed on the substrate 100.

[0079] Counter electrode 205 may be located above (on top of) intermediate layer 203. Counter electrode 205 may correspond to first pixel electrode 211, second pixel electrode 221, and third pixel electrode 231 (e.g., stacked with first pixel electrode 211, second pixel electrode 221, and third pixel electrode 231), and may be integrally formed on multiple pixel electrodes. Counter electrode 205 may include a transparent conductive layer formed of ITO, In2O3, and / or IZO, and in some embodiments may include a translucent layer comprising Ag, Mg, Al, Ni, Cr, Li, Ca, or alloys thereof. For example, counter electrode 205 may be a translucent membrane comprising Ag and Mg.

[0080] Because the first light-emitting element 210, the second light-emitting element 220 and the third light-emitting element 230 may be easily damaged by moisture and / or oxygen from the outside, the encapsulation layer 300 can cover the first light-emitting element 210, the second light-emitting element 220 and the third light-emitting element 230 to protect them.

[0081] The encapsulation layer 300 may be located above the counter electrode 205. The encapsulation layer 300 may include a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0082] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each comprise one or more inorganic insulating materials. The one or more inorganic insulating materials may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and / or silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be formed by CVD.

[0083] The organic encapsulation layer 320 may include polymeric materials. Non-limiting examples of polymeric materials include acrylic resins, epoxy resins, polyimides, and polyethylene. For example, the organic encapsulation layer 320 may include acrylic resins, such as polymethyl methacrylate and / or polyacrylic acid. The organic encapsulation layer 320 may be formed by curing monomers or applying polymers.

[0084] The structure comprising a stacked layer from the substrate 100 to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 can be referred to as the light-emitting unit 10. The light emitted from the light-emitting unit 10 is referred to as the incident light Lib on the optical unit 20. For example, light of a first color emitted by the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230 can pass through the encapsulation layer 300 and proceed in parallel to the optical unit 20.

[0085] The optical unit 20 may include a stacked structure comprising a first light-shielding layer 410, a liquid-repellent layer 430, a metal layer 440, a first color conversion layer 451, a second color conversion layer 452, a light-transmitting layer 453, a first cover layer 470, a second light-shielding layer 510, a first color filter layer 531, a second color filter layer 532, a third color filter layer 533, a filler 540, and a second cover layer 550.

[0086] The first color conversion layer 451 and the first color filter layer 531 can be stacked with the first light-emitting element 210, and the second color conversion layer 452 and the second color filter layer 532 can be stacked with the second light-emitting element 220. In addition, the light-transmitting layer 453 and the third color filter layer 533 can be stacked with the third light-emitting element 230.

[0087] The first light-shielding layer 410 may include a first set of openings OP1 corresponding to the light-emitting element 200. The first light-shielding layer 410 may include a first opening OP1-1, a second opening OP1-2, and a third opening OP1-3 corresponding to the first light-emitting element 210, the second light-emitting element 220, and the third light-emitting element 230, respectively.

[0088] The inner surface of the first set of openings OP1 defined by the first light-shielding layer 410 may (all) include a tapered inclined surface. For example, the inner surface of the first light-shielding layer 410 may include a positive tapered surface (e.g., such that the inner surface is inclined downward toward the central axis of the pixel). Therefore, the widths of the first-1 opening OP1-1, the first-2 opening OP1-2, and the first-3 opening OP1-3 may gradually increase in a direction away from the substrate 100.

[0089] The inner surface of the first light-shielding layer 410 may form a first angle α1 relative to the lower surface 410S of the first light-shielding layer 410. In an embodiment, the first angle α1 may be an acute angle, i.e., less than 90 degrees, in which case the first light-shielding layer 410 may have a trapezoidal cross-section. For example, the width of the portion of the first light-shielding layer 410 between two adjacent opening portions in the first-1 opening portion OP1-1, the first-2 opening portion OP1-2, and the first-3 opening portion OP1-3 may decrease along the Z direction as the distance from the light-emitting unit 10 and / or the substrate 100 increases.

[0090] The first light-shielding layer 410 can have any suitable color (such as black, white, red, purple, and / or blue). The first light-shielding layer 410 may include colored pigments or dyes. The first light-shielding layer 410 may include a light-shielding material. The light-shielding material may include an opaque inorganic insulating material comprising metal oxides (such as titanium oxide (TiO2), chromium oxide (Cr2O3), and / or molybdenum oxide (MoO3)), or may include an opaque organic insulating material (such as black resin). In another example, the first light-shielding layer 410 may include an organic insulating material (such as white resin).

[0091] As described below, the first light-shielding layer 410 can prevent or reduce color mixing between wavelengths of light converted or transmitted by the adjacent first color conversion layer 451, second color conversion layer 452 and light-transmitting layer 453.

[0092] The first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can be located in the first-1 opening portion OP1-1, the first-2 opening portion OP1-2, and the first-3 opening portion OP1-3, respectively. The first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can be separated from each other by the material portion of the first light-shielding layer 410 located therebetween.

[0093] The first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can convert the incident light Lib generated by the light-emitting unit 10 into light of another color or transmit the incident light Lib, and can emit light toward the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The light converted or transmitted by the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can be one of red light, green light, and blue light.

[0094] The incident light Lib may be blue light with a wavelength of about 400 nm or greater and less than about 495 nm, and the light emitted (transmitted) through the first color filter layer 531, the second color filter layer 532 and the third color filter layer 533 may include red light with a wavelength of about 580 nm or greater, green light with a wavelength of about 495 nm or greater and less than about 580 nm and blue light with a wavelength of about 400 nm or greater and less than about 495 nm.

[0095] The incident light Lib can be converted into red light (e.g., red light with a center wavelength of about 580 nm or greater and less than about 750 nm) by the first color conversion layer 451, and can pass through the first color filter layer 531 and be emitted to the outside. The first color filter layer 531 includes a red pigment or dye and can selectively transmit red light.

[0096] The incident light Lib can be converted into green light (e.g., green light with a center wavelength of about 495 nm or greater and less than about 580 nm) by the second color conversion layer 452, and can pass through the second color filter layer 532 and be emitted to the outside. The second color filter layer 532 includes a green pigment or dye and can selectively transmit green light.

[0097] Incident light Lib can be transmitted through the light-transmitting layer 453 and emitted toward the third color filter layer 533 without color conversion, and the light passing through the third color filter layer 533 can be emitted to the outside. The third color filter layer 533 includes a blue pigment or dye and can selectively transmit blue light.

[0098] Therefore, the incident light Lib emitted from the light-emitting unit 10 is converted into green or red light, or transmitted as blue light, while passing through the first color conversion layer 451, the second color conversion layer 452 and the light-transmitting layer 453, thereby displaying a color image.

[0099] In this embodiment, the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can all be formed by inkjet printing. Ink used to form the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can be sprayed into the first set of openings OP1 of the first light-shielding layer 410, thereby forming the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453.

[0100] The liquid-repellent layer 430 may be located above the first light-shielding layer 410. In a plane (e.g., when viewed perpendicular to the thickness direction (e.g., along the Z direction)), the liquid-repellent layer 430 does not overlap with the first set of openings OP1 of the first light-shielding layer 410, and may be located between the first set of openings OP1. For example, the liquid-repellent layer 430 may overlap with an area of ​​light-shielding material in which the first light-shielding layer 410 is positioned.

[0101] The liquid-repellent layer 430 may include a liquid-repellent material that has liquid-repellent properties to the materials forming the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453. The liquid-repellent material may include a hydrophobic organic polymer material. For example, the liquid-repellent material may include an organic material containing fluorine (F).

[0102] During the inkjet printing process forming the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453, the liquid-resistant layer 430 can impart liquid-resistant properties, such that the ink forming the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 is located in the first set of openings OP1, and not on the first light-shielding layer 410. Since the ink is hydrophilic and the liquid-resistant layer 430 is hydrophobic, the liquid-resistant layer 430 can prevent or reduce ink overflow from the first set of openings OP1 into adjacent openings within the first set of openings OP1. Therefore, mixing between adjacent layers in the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 can be prevented or reduced, and color mixing between pixels can be prevented or reduced, thus improving the manufacturing quality of the display device.

[0103] The metal layer 440 may be located on the inner side (surface) of the first light-shielding layer 410, facing the first set of openings OP1. That is, the metal layer 440 may be located between each side (side surface) of the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 and the corresponding inner side (side surface) of the first light-shielding layer 410. In a first direction away from the light-emitting unit 10 and / or the substrate 100 (e.g., along the Z direction), the width or thickness t of the metal layer 440 in a second direction perpendicular to the first direction may gradually decrease. In embodiments, the first direction may be the Z direction, and the second direction may be the X or Y direction. The thickness t of the metal layer 440 may be less than approximately 2 μm.

[0104] The metal layer 440 may include a first surface S1 in contact with the inner surface of the first light-shielding layer 410 and a second surface S2 opposite to the first surface S1 (e.g., in contact with the first color conversion layer 451, the second color conversion layer 452, or the light-transmitting layer 453). The lower surface 410S of the first light-shielding layer 410 facing the encapsulation layer 300 and the first surface S1 of the metal layer 440 may form a first angle a1. The lower surface 410S of the first light-shielding layer 410 and the second surface S2 of the metal layer 440 may form a second angle a2. According to an embodiment, the thickness t of the metal layer 440 increases as the metal layer 440 approaches the encapsulation layer 300; therefore, the second angle a2 may be smaller than (less than) the first angle a1.

[0105] In this embodiment, the metal layer 440 may include TiO2 as a scattering material. Light reaching the metal layer 440 can be scattered from its surface and can travel along various paths. Therefore, the degree of color conversion of the incident light Lib can be increased within the first color conversion layer 451 or the second color conversion layer 452, thereby improving light conversion efficiency.

[0106] In another embodiment, the metal layer 440 may include Ag nanoparticles. Ag nanoparticles have excellent reflectivity, so light reaching the metal layer 440 can be reflected from its surface. Therefore, the light absorption of incident light Lib (incident on the first color conversion layer 451, the second color conversion layer 452, or the light-transmitting layer 453) by the light-shielding material of the first light-shielding layer 410 can be reduced, thus improving light extraction efficiency and / or brightness. Furthermore, due to surface plasmon resonance, the Ag nanoparticles can strongly resonate with visible light, thereby causing visible light scattering. This allows for strong scattering of light reaching the metal layer 440, thus improving light conversion efficiency. In some embodiments, the metal layer 440 may include titanium oxide (TiO2) and / or silver (Ag) nanoparticles.

[0107] In some embodiments, the metal layer 440 may comprise a polymer. In this embodiment, the polymer of the metal layer 440 may comprise a polymer formed by the condensation reaction of a multifunctional monomer comprising a bifunctional monomer. The multifunctional monomer may have multiple functional groups and may be bonded to other monomers at multiple sites. For example, the bifunctional monomer may comprise hexanediol diacrylate (1,6-hexanediol diacrylate, HDDA). The polymer enables the metal layer 440 to be formed stably without collapsing on the inner surfaces(s) of the first set of opening portions OP1(s) of the first light-shielding layer 410. As another example, the polymer of the metal layer 440 may be a polymer formed by the condensation reaction of a liquid crystal monomer.

[0108] The first cover layer 470 may be located above the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453. The first cover layer 470 may cover the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453. The first cover layer 470 may include an inorganic insulating material (such as silicon nitride, silicon oxide, and / or silicon oxynitride).

[0109] The first cover layer 470 and the encapsulation layer 300 can be arranged such that the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 are located between them. The first color conversion layer 451 and the second color conversion layer 452 can be referenced as follows. Figure 4 All descriptions include quantum dots. Because quantum dots comprise nanoparticles, they can degrade due to reactions with moisture, oxygen, etc. Therefore, the first capping layer 470 and the encapsulation layer 300 can be positioned above and below the first color conversion layer 451 and the second color conversion layer 452, respectively, to cover the first color conversion layer 451 and the second color conversion layer 452, thereby preventing or reducing the introduction of moisture and / or oxygen, etc., into the quantum dots in the first color conversion layer 451 and the second color conversion layer 452.

[0110] The second light-shielding layer 510 may be located above the first cover layer 470. The second light-shielding layer 510 may include a second set of opening portions OP2 respectively superimposed on the first set of opening portions OP1. The second light-shielding layer 510 may include a light-shielding material. The light-shielding material may include an opaque inorganic insulating material containing metal oxides (such as TiO2, Cr2O3, and / or MoO3), or may include an opaque organic insulating material (such as black resin). The second light-shielding layer 510 can block light emission to the outside of the emitting area, thereby preventing or reducing light leakage in the display device 1.

[0111] The first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can each be located in the second set of openings OP2 of the second light-shielding layer 510. For example, the first color filter layer 531 can be located in the 2-1 (first) opening OP2-1 corresponding to the first light-emitting element 210, the second color filter layer 532 can be located in the 2-2 (second) opening OP2-2 corresponding to the second light-emitting element 220, and the third color filter layer 533 can be located in the 2-3 (third) opening OP2-3 corresponding to the third light-emitting element 230. As another example, some of the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 can be located above the second light-shielding layer 510.

[0112] The first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 may each include an organic pattern containing dyes and / or pigments. As described above, the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533 may each include pigments and / or dyes of different colors, and may selectively transmit light of a specific color.

[0113] Taking into account the amount of each color of light emitted from the display device 1, the width and / or thickness of the third color filter layer 533 may be greater than the width and / or thickness of each of the first color filter layer 531 and the second color filter layer 532.

[0114] In some embodiments, the second light-shielding layer 510 may comprise the same material as the third color filter layer 533 and may be formed using the same process. In this case, the first color filter layer 531 may be located in the second-1 opening portion OP2-1 corresponding to the first light-emitting element 210, the second color filter layer 532 may be located in the second-2 opening portion OP2-2 corresponding to the second light-emitting element 220, the second-3 opening portion OP2-3 is not formed at the position corresponding to the third light-emitting element 230, and a portion of the second light-shielding layer 510 may be used as the third color filter layer 533. The portion of the second light-shielding layer 510 located between the first color filter layer 531 and the second color filter layer 532 may prevent or reduce color mixing between wavelengths of light converted by the adjacent first color conversion layer 451 and second color conversion layer 452.

[0115] The filler 540 may be located above the second light-shielding layer 510 and may cover the first color filter layer 531, the second color filter layer 532, and the third color filter layer 533. The filler 540 may buffer external pressure, etc., and may provide a flat upper surface. The filler 540 may include organic materials (such as acrylic resin, epoxy resin, polyimide, and / or polyethylene).

[0116] The second cover layer 550 may be located above the filler 540. The second cover layer 550 may include an inorganic insulating material (such as silicon nitride, silicon oxide, and / or silicon oxynitride).

[0117] The case in which the light-emitting unit 10 and the optical unit 20 of the display device 1 are formed on a single substrate has already been described. However, in another embodiment, the display device 1 can be manufactured by forming the light-emitting unit 10 and the encapsulation layer 300 on a lower substrate, forming the optical unit 20 on an upper substrate, and bonding the lower substrate to the upper substrate. In this case, the width t of the metal layer 440 can gradually decrease from the upper substrate toward the lower substrate.

[0118] Figure 4This is an enlarged cross-sectional view showing the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453 in the display device 1 according to an embodiment.

[0119] Reference Figure 4 The display device 1 according to the embodiment may include a first color conversion layer 451, a second color conversion layer 452 and a light-transmitting layer 453.

[0120] For example, the first color conversion layer 451 can convert blue incident light Lib into red light Lr. To this end, the first color conversion layer 451 may include a first photosensitive polymer 451a in which first quantum dots 451b are dispersed.

[0121] The first photopolymer 451a is not particularly limited, as long as it is a material with excellent dispersion characteristics and light transmittance, but may include, for example, acrylic resin, imide resin and / or epoxy resin.

[0122] The first quantum dot 451b can be excited by blue incident light Lib to isotropically emit red light Lr with a wavelength longer than that of blue light. In this specification, the term "quantum dot" refers to a crystal of a semiconductor compound and may include any material capable of emitting light of various wavelengths depending on the size of the crystal.

[0123] The first quantum dot 451b can be synthesized using wet chemical processes, metal-organic CVD processes, molecular beam epitaxy (MBE), or similar processes. Wet chemical processes involve growing quantum dot crystals by mixing an organic solvent with a precursor material. During crystal growth, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot crystals and controls the crystal growth. Therefore, compared to vapor deposition methods such as metal-organic CVD (MOCVD) and / or molecular beam epitaxy (MBE), the growth of quantum dot particles can be controlled using a simpler and cheaper process.

[0124] The first quantum dot 451b may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or semiconductor compounds, or any combination thereof.

[0125] Non-limiting examples of group II-VI semiconductor compounds include binary compounds (such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS, etc.), ternary compounds (such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, Cd... ZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, MgZnTe, HgZnSe, MgZnSe and / or MgZnS, etc.), quaternary compounds (such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe, etc.) or any combination thereof.

[0126] Non-limiting examples of group III-V semiconductor compounds include binary compounds (such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb, etc.), ternary compounds (such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb, etc.), quaternary compounds (such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb, etc.), or any combination thereof. Additionally, group III-V semiconductor compounds may also include group II elements. Non-limiting examples of group III-V semiconductor compounds, including group II elements, include InZnP, InGaZnP, and / or InAlZnP, etc.

[0127] Non-limiting examples of III-VI semiconductor compounds include binary compounds (such as In2S3, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3 and / or InTe, etc.), ternary compounds (such as InGaS3 and / or InGaSe3), or any combination thereof.

[0128] Non-limiting examples of group I-III-VI semiconductor compounds include ternary compounds (such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2 and / or any combination thereof).

[0129] Non-limiting examples of group IV-VI semiconductor compounds include binary compounds (such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe, etc.), ternary compounds (such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe, etc.), quaternary compounds (such as SnPbSSe, SnPbSeTe and / or SnPbSTe, etc.), or any combination thereof.

[0130] Group IV elements or semiconductor compounds can be simple substances (such as Si and / or Ge), binary compounds (such as SiC and / or SiGe), or any combination thereof.

[0131] Each element included in a multi-element compound (e.g., a binary, ternary, or quaternary compound) may exist in the particles at a substantially uniform concentration (e.g., distribution) or a non-uniform concentration.

[0132] Furthermore, the first quantum dot 451b can have a single structure or a core-shell dual structure, wherein the concentration of each element in the corresponding quantum dot is uniform. For example, the materials included in the core and the materials included in the shell can be different from each other.

[0133] The shell can serve as a protective layer to maintain semiconductor properties by preventing or reducing chemical modification of the core and / or as a charged layer to impart electrophoretic properties to quantum dots. The shell can be a single layer or can include multiple layers. The interface between the core and the shell can have a concentration gradient of elements present in the shell that decreases towards the center.

[0134] Non-limiting examples of the shell include metal or non-metal oxides, semiconductor compounds, or combinations thereof. Non-limiting examples of metal or non-metal oxides include binary compounds (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and / or NiO), ternary compounds (such as MgAl2O4, CoFe2O4, NiFe2O4, and / or CoMn2O4), or any combination thereof. Semiconductor compounds may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, or any combination thereof. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0135] The first quantum dot 451b can have a particle size of less than or equal to about 45 nm or smaller (e.g., less than or equal to about 40 nm or smaller, and as another example, less than or equal to about 30 nm or smaller) of the emission wavelength spectrum, and color purity or color reproducibility can be improved within this range. Because light emitted through the first quantum dot 451b is emitted in all directions, the viewing angle of light can be improved.

[0136] In some embodiments, the shape of the first quantum dot 451b can be, for example, spherical, pyramidal, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanosheets, etc. In some embodiments, the first scattering particles 451c can be further dispersed in the first photosensitive polymer 451a. The first scattering particles 451c can excite more of the first quantum dots 451b by scattering any portion of the blue incident light Lib that was initially not absorbed by the first quantum dot 451b. Therefore, the color conversion efficiency of the first color conversion layer 451 can be improved. Furthermore, the first scattering particles 451c can scatter light in various directions regardless of the incident angle without substantially changing the wavelength of the incident light. This improves side visibility.

[0137] The first scattering particles 451c can be particles having a refractive index different from that of the first photosensitive polymer 451a, for example, light-scattering particles. The first scattering particles 451c are not particularly limited, as long as they form an optical interface with the first photosensitive polymer 451a to partially scatter transmitted light, but can be, for example, metal oxide particles or organic particles. Non-limiting examples of metal oxides include TiO2, zirconium oxide (ZrO2), aluminum oxide (Al2O3), In2O3, zinc oxide (ZnO), and / or tin oxide (SnO2), etc. Non-limiting examples of organic materials include acrylic resins and urethane resins. The second color conversion layer 452 can convert blue incident light Lib into green light Lg. The second color conversion layer 452 can include a second photosensitive polymer 452a in which second quantum dots 452b are dispersed. In the second photosensitive polymer 452a, the second scattering particles 452c are dispersed together with the second quantum dots 452b. Therefore, the color conversion efficiency of the second color conversion layer 452 can be increased.

[0138] The second photosensitive polymer 452a may include a material substantially the same as the first photosensitive polymer 451a, and the second scattering particle 452c may include a material substantially the same as the first scattering particle 451c.

[0139] The second quantum dot 452b may comprise (e.g., have) a material substantially the same as that of the first quantum dot 451b, and may have a shape substantially the same as that of the first quantum dot 451b. However, the size of the second quantum dot 452b may be smaller than (less than) that of the first quantum dot 451b. Therefore, the second quantum dot 452b may emit light with a wavelength band different from that of the first quantum dot 451b. For example, the band gap can be tuned by adjusting the size of the quantum dot, thus allowing for the acquisition of light in various wavelength bands. The second quantum dot 452b may be smaller than the first quantum dot 451b. Therefore, the second quantum dot 452b may be excited by blue incident light Lib to isotropically emit green light Lg, which has a wavelength longer than that of blue light and shorter than that of red light Lr. The light-transmitting layer 453 may comprise a third photosensitive polymer 453a in which third scattering particles 453c are dispersed. For example, the light-transmitting layer 453 may not include individual quantum dots that can be excited by blue incident light Lib. Similar to the first photosensitive polymer 451a, the third photosensitive polymer 453a may include an organic material with light-transmitting properties, and the third scattering particles 453c may include a material substantially the same as that of the first scattering particles 451c. Because the blue incident light Lib incident on the light-transmitting layer 453 can be transmitted through the light-transmitting layer 453 without changing its color, the light emitted through the light-transmitting layer 453 can be blue light Lb. However, the blue incident light Lib can be scattered and emitted to the outside by the third scattering particles 453c in the light-transmitting layer 453. Because the light-transmitting layer 453 allows the blue incident light Lib to be transmitted without changing its color, higher light efficiency can be obtained.

[0140] Figures 5A-5G (or Figures 5A to 5G ( ) is a cross-sectional view illustrating some operations in a method of manufacturing a display device 1 according to an embodiment.

[0141] Reference Figure 5A A light-emitting unit 10 can be prepared, comprising a substrate 100, pixel circuitry located on the substrate 100, and light-emitting devices located on the substrate 100. An encapsulation layer 300 can be formed above the light-emitting unit 10.

[0142] A first light-shielding layer 410, including a first set of openings OP1, can be formed above the encapsulation layer 300. The first set of openings OP1 can each correspond to a light-emitting element. For example, Figure 5A The first set of openings OP1 shown can correspond to the above references respectively. Figure 3 The first-1 opening portion OP1-1, the first-2 opening portion OP1-2, and the first-3 opening portion OP1-3 are described. To form the first light-shielding layer 410, a photolithography process can be used as an example, and a nanoimprint lithography process can be used as another example.

[0143] Reference Figure 5B A liquid-resistant layer 430 can be formed above the first light-shielding layer 410. The liquid-resistant layer 430 can be formed by exposure during the photolithography process used to form the first light-shielding layer 410. For example, the first light-shielding layer 410 can be formed by exposing and developing a first material included in the first light-shielding layer 410, and the first material included in the first light-shielding layer 410 can include a liquid-resistant material. In this case, the liquid-resistant material mixed with the first material included in the first light-shielding layer 410 during exposure accumulates on the upper surface of the first light-shielding layer 410 to form the liquid-resistant layer 430. The liquid-resistant material has liquid-resistant properties for the materials forming the first color conversion layer 451, the second color conversion layer 452, and the light-transmitting layer 453, and can include hydrophobic organic polymer materials, such as organic materials including fluorine (F). Therefore, when analyzing the composition of the first light-shielding layer 410 and the liquid-resistant layer 430 completed by the above process, the portion having a high content of organic substances including fluorine (F) can correspond to the liquid-resistant layer 430.

[0144] Reference Figure 5C The metal layer 440 can be formed using an inkjet printing process, and a first ink IK1 can be jetted into the first set of opening portions OP1. The first ink IK1 may include materials used to form the metal layer 440. In an embodiment, the first ink IK1 may include TiO2 and / or Ag nanoparticles, and may include bifunctional monomers. For example, the first ink IK1 may include a mixture comprising TiO2 and / or Ag nanoparticles and bifunctional monomers. Based on the total amount of the first ink IK1, the mixture (e.g., nanoparticles and bifunctional monomers) may be less than 30 wt%. In another embodiment, the first ink IK1 may include liquid crystal monomers.

[0145] The first ink IK1 may include at least two solvents to dissolve the mixture. The at least two solvents may include a first solvent and a second solvent with different vapor pressures. In an embodiment, the first solvent is the main solvent, and based on the total amount of the first ink IK1, the first solvent may be 50 wt% or more. The first solvent may be, for example, propylene glycol methyl ether acetate (PGMEA). The second solvent is a co-solvent and helps dissolve the mixture. The second solvent may be, for example, a ketone material, and may be acetone and / or methyl ethyl ketone (MEK), etc.

[0146] In this embodiment, the first solvent may have a higher vapor pressure than the second solvent. Therefore, in a given dry environment, the evaporation rate of the first solvent may be greater than that of the second solvent.

[0147] Considering the area where a metal layer 440 will be formed on the inner surface of the first set of openings OP1, the first ink IK1 can be filled to the desired height in the first set of openings OP1 by inkjet printing process.

[0148] Reference Figure 5D This allows the first ink IK1, which is filled in the first set of openings OP1, to dry. In an embodiment, the first ink IK1 can be dried at room temperature or a higher temperature (e.g., 80°C), and a negative pressure can be created around the first ink IK1 by drawing in air from the first ink IK1, such as an air intake device, to promote drying.

[0149] The first solvent of the first ink IK1 has a higher vapor pressure than the second solvent, and therefore can be evaporated first. As the first solvent evaporates, the volume of the first ink IK1 in the first set of openings OP1 can decrease, and the first ink IK1 can form a concave meniscus or recess ME through capillary action. The more the first solvent evaporates, the more concave the concave meniscus ME becomes, and the unevaporated mixture in the first ink IK1 (e.g., TiO2 or Ag nanoparticles and bifunctional monomers) can be driven to the inner surface of the first light-shielding layer 410. As the first solvent evaporates, the first ink IK1 may lose its fluidity, thus the first ink IK1 can maintain its concavity.

[0150] Reference Figure 5E As the first ink IK1 is further dried, the second solvent of the first ink IK1 can be evaporated, and the volume of the first ink IK1 can thus be further reduced. In this process, the first ink IK1 completely loses its fluidity and can be solidified. Some of the bifunctional monomers in the first ink IK1 can condense and polymerize to form a polymer. Therefore, after all the solvent of the first ink IK1 has been evaporated, TiO2 or Ag nanoparticles can be attached (e.g., adsorbed) to the inner surface of the first set of openings OP1 by means of the polymer to form a metal layer 440. In this case, the width t of the metal layer 440 can increase as the metal layer 440 approaches the encapsulation layer 300.

[0151] Reference Figure 5F After the first ink IK1 dries, a photocuring process and / or a thermal curing process can be performed. In an embodiment, the photocuring process can be performed by irradiating the metal layer 440 with laser and / or ultraviolet light. Alternatively, in an embodiment, the thermal curing process can be performed by applying heat to the metal layer 440, for example, applying heat of 120°C or higher. The photocuring process and / or the thermal curing process can further accelerate the curing of the bifunctional monomers of the metal layer 440. As a result, the metal layer 440 can be formed more stably without collapsing on the inner surface of the first set of openings OP1.

[0152] Reference Figure 5GThe second ink IK2 can be sprayed into the first set of openings OP1 of the first light-shielding layer 410 through inkjet printing process to form the first color conversion layer 451, the second color conversion layer 452 and the light-transmitting layer 453.

[0153] The second ink IK2 may include a second-1 ink IK2-1 containing the material forming the first color conversion layer 451, a second-2 ink IK2-2 containing the material forming the second color conversion layer 452, and a second-3 ink IK2-3 containing the material forming the light-transmitting layer 453. The second-1 ink IK2-1 may include the material referred to above. Figure 4 The first photosensitive polymer 451a described (see...) Figure 4 ), First quantum dot 451b (see Figure 4 ) and the first scattering particle 451c (see Figure 4 The second-2 ink IK2-2 may include a second photosensitive polymer 452a (see...). Figure 4 ), second quantum dot 452b (see Figure 4 ) and second scattering particle 452c (see Figure 4 ). Section 2-3 may include the above references. Figure 4 The third photosensitive polymer 453a described (see...) Figure 4 ) and the third scattering particle 453c (see Figure 4 ).

[0154] As a comparative example, when forming the metal layer 440 using a process such as photolithography, processes such as exposure and / or etching are performed on the metal layer material above the liquid-resistant layer to apply the metal layer material and pattern it. In this process, the liquid-resistant layer can be unintentionally removed, and it is not possible to prevent the ink from overflowing to form the color conversion layer or the light-transmitting layer.

[0155] However, according to the above embodiment, since the inkjet printing process is used to form the metal layer 440, the liquid-resistant layer 430 is not removed. Therefore, ink overflow can be prevented, and the manufacturing quality of the display device 1 can be improved.

[0156] Figure 6 This is a cross-sectional view showing a portion of a display device 1 according to another embodiment.

[0157] Figure 6 The display device 1 includes a light-emitting unit 10 and an optical unit 20 for converting or transmitting light emitted from the light-emitting unit 10, and the structure of the light-emitting unit 10 is the same as described above. Figure 3 The structures described are the same. Figure 6 The shape (e.g., internal structure) of the optical unit 20 is similar to that of the reference. Figure 3 The shape of the optical unit 20 described is slightly different, and the following description will focus mainly on the differences.

[0158] Reference Figure 6 The first light-shielding layer 410 may include a first set of opening portions OP1, and the first light-shielding layer 410 defining the first set of opening portions OP1 may include an inclined inner surface. For example, the inner surface of the first light-shielding layer 410 may include an inverted conical inclined surface (e.g., oriented such that the inner surface is inclined upward toward the central axis of the pixel), and the first angle α1 formed by the inner surface relative to the lower surface 410S of the first light-shielding layer 410 may be an obtuse angle, i.e., an angle greater than 90 degrees. The first light-shielding layer 410 may have an inverted trapezoidal cross-section, and the width of the first set of opening portions OP1 (e.g., the first-1 opening portion OP1-1, the first-2 opening portion OP1-2, and the first-3 opening portion OP1-3) may gradually decrease in the direction away from the light-emitting unit 10 and / or the substrate 100. The shape of the first light-shielding layer 410 may result from variations in the formation conditions of the first light-shielding layer 410 (such as process temperature).

[0159] When the first angle a1 is obtuse, the probability that incident light Lib of the wavelength incident on the first set of openings OP1 will be reflected back from the inner surface of the first light-shielding layer 410 toward the substrate 100 increases. However, according to the embodiment, the width t of the metal layer 440 on the inner surface of the first light-shielding layer 410 increases as the metal layer 440 approaches the encapsulation layer 300, therefore, the second angle a2 can be smaller than the first angle a1. As described above, the metal layer 440 allows a portion of the incident light Lib to be reflected from the second surface S2 of the metal layer 440, reducing the probability that this portion of the incident light Lib will be reflected back toward the substrate 100. This reduces optical loss.

[0160] Figures 7A-7C This illustrates some tasks and manufacturing processes in a method for manufacturing a display device 1 according to another embodiment. Figure 6 A cross-sectional view of some tasks in the method of display device 1.

[0161] Reference Figure 7A This allows the formation of a first light-shielding layer 410 and a liquid-resistant layer 430, including the first set of openings OP1. The processes for forming the first light-shielding layer 410 and the liquid-resistant layer 430 are as described above. Figure 5A and Figure 5B As described.

[0162] Then, in order to form the metal layer 440, the first ink IK1 can be sprayed into the first set of opening portions OP1 by inkjet printing process.

[0163] Reference Figure 7BThis allows the first ink IK1 filled in the first set of openings OP1 to dry. As the first solvent of the first ink IK1 evaporates, the volume of the first ink IK1 in the first set of openings OP1 can decrease, and the first ink IK1 can form a recess ME through capillary action. The more the first solvent evaporates, the more concave the recess ME becomes, and the unevaporated mixture in the first ink IK1 (i.e., TiO2 or Ag nanoparticles and bifunctional monomers) can be driven to the inner surface of the first light-shielding layer 410.

[0164] Reference Figure 7C As the first ink IK1 is further dried, the second solvent of the first ink IK1 can be evaporated, and when all the solvent in the first ink IK1 has evaporated, the first ink IK1 completely loses its fluidity and can be solidified. The TiO2 and / or Ag nanoparticles of the first ink IK1 can be attached to the inner surface of the first set of openings OP1 by means of a polymer formed by the condensation and polymerization of bifunctional monomers to form a metal layer 440. In this case, the width t of the metal layer 440 can increase as the metal layer 440 approaches the encapsulation layer 300.

[0165] After the first ink IK1 has dried, a photocuring process and / or a thermal curing process can be performed, and the methods used for this can be referred to above. Figure 5F As described above. Furthermore, after forming the metal layer 440, a first color conversion layer 451, a second color conversion layer 452, and a light-transmitting layer 453 can be formed, and the method is as described above. Figure 5G As described.

[0166] According to the embodiment constructed as described above, a metallic layer for scattering and reflecting light can be formed around the color conversion layer and the light-transmitting layer without damaging the liquid-resistant layer for preventing or reducing color mixing between pixels. This prevents or reduces color mixing and improves brightness and / or light conversion efficiency. Therefore, a display device with improved display quality and a method for manufacturing the display device can be realized. However, the disclosure is not limited to this effect.

[0167] As used herein, the terms “basically,” “about,” and similar terms are used as approximate terms rather than as terms of degree, and are intended to account for inherent biases in measurements or calculations that will be recognized by one of ordinary skill in the art.

[0168] Any numerical range stated herein is intended to include all subranges with the same numerical precision contained within the stated range. For example, the range “1.0 to 10.0” is intended to include all subranges between the stated minimum value 1.0 and the stated maximum value 10.0 (inclusive), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit stated herein is intended to include all smaller numerical limits contained therein, and any minimum numerical limit stated in this specification is intended to include all larger numerical limits contained therein. Therefore, the applicant reserves the right to amend this specification (including the claims) to expressly state any subranges contained within the range expressly stated herein.

[0169] Electronic or electrical devices and / or any other related devices or components (such as timing controllers, data drivers, and gate drivers) according to embodiments of the present disclosure described herein can be implemented using any suitable hardware, firmware (e.g., application-specific integrated circuits), software, or a combination of software, firmware, and hardware. For example, various components of these devices can be formed on an integrated circuit (IC) chip or on separate IC chips. Furthermore, various components of these devices can be implemented on flexible printed circuit films, tape-on-a-package (TCP), printed circuit boards (PCBs), or formed on a substrate. Additionally, various components of these devices can be processes or threads that run on one or more processors in one or more computing devices, execute computer program instructions, and interact with other system components to perform the various functions described herein. The computer program instructions are stored in memory, which can be implemented in the computing device using standard memory devices such as random access memory (RAM). The computer program instructions can also be stored on other non-transitory computer-readable media, such as CD-ROMs, flash drives, etc. Furthermore, those skilled in the art should recognize that, without departing from the spirit and scope of this disclosure, the functions of various computing / electronic devices can be combined or integrated into a single computing / electronic device, or the functions of a particular computing / electronic device can be distributed across one or more other computing / electronic devices.

[0170] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope as defined by the claims and their equivalents.

Claims

1. A display device, the display device comprising: The first light-emitting element, the second light-emitting element, and the third light-emitting element all include an emitting layer that emits light of a first color in a first direction; An encapsulation layer covers the first light-emitting element to the third light-emitting element; A first light-shielding layer is located on the encapsulation layer, and the first light-shielding layer includes a first set of opening portions respectively corresponding to the first light-emitting element to the third light-emitting element; A metal layer is located on the inner surface of the first light-shielding layer, the inner surface defining the first set of openings, wherein: the width of the metal layer in a second direction perpendicular to the first direction gradually decreases along the first direction; A first color conversion layer is disposed in the first opening portion of the first set of opening portions and corresponds to the first light-emitting element; A second color conversion layer is disposed in the second opening portion of the first set of opening portions and corresponds to the second light-emitting element; and A light-transmitting layer is disposed in the third opening portion of the first set of opening portions and corresponds to the third light-emitting element.

2. The display device of claim 1, further comprising a liquid-resistant layer on the first light-shielding layer, the liquid-resistant layer being located in a plane between the first opening portion, the second opening portion and the third opening portion of the first set of opening portions.

3. The display device as claimed in claim 1, wherein, The width of the metal layer is less than 2 μm.

4. The display device as claimed in claim 1, wherein, The metal layer comprises titanium oxide and / or silver nanoparticles.

5. The display device as claimed in claim 1, wherein, The metal layer comprises a polymer.

6. The display device as claimed in claim 5, wherein, The polymer of the metal layer comprises a condensation polymer of a bifunctional monomer.

7. The display device as claimed in claim 6, wherein, The bifunctional monomer includes hexanediol diacrylate.

8. The display device of claim 1, further comprising a second light-shielding layer located on the first light-shielding layer, the second light-shielding layer comprising a second set of openings overlapping the first set of openings.

9. The display device of claim 8, further comprising a first color filter layer, a second color filter layer, and a third color filter layer, wherein the first color filter layer, the second color filter layer, and the third color filter layer are all disposed in the second set of opening portions and are respectively stacked with the first color conversion layer, the second color conversion layer, and the light-transmitting layer.

10. The display device as claimed in claim 1, wherein, The inner surface of the first light-shielding layer is a tapered inclined surface.

11. The display device as claimed in claim 1, wherein, The metal layer includes a first surface that contacts the inner surface of the first light-shielding layer and a second surface that is opposite to the first surface. The first angle is greater than the second angle. The first angle is formed by the face of the first light-shielding layer to the lower surface of the encapsulation layer and the first surface of the metal layer, and the second angle is formed by the lower surface of the first light-shielding layer and the second surface of the metal layer.

12. A method for manufacturing a display device, the method comprising the following steps: A substrate is prepared on which a first light-emitting element, a second light-emitting element, and a third light-emitting element are disposed, wherein the first light-emitting element, the second light-emitting element, and the third light-emitting element all include an emitting layer that emits light of a first color; A first light-shielding layer is formed on the substrate, the first light-shielding layer including a first set of opening portions respectively corresponding to the first light-emitting element to the third light-emitting element; A liquid-resistant layer is formed on the first light-shielding layer; The first ink is sprayed into the first set of openings, the first ink comprising at least two solvents having different vapor pressures from each other; as well as The first ink is dried to form a metal layer in the first set of openings.

13. The method of claim 12, wherein, The first ink comprises at least two solvents, including a first solvent and a second solvent having different vapor pressures from each other.

14. The method of claim 13, wherein, The first ink comprises 50 wt% or more of the first solvent.

15. The method of claim 14, wherein, The first solvent has a higher vapor pressure than the second solvent.

16. The method of claim 15, wherein, The steps for drying the first ink include: Evaporation of the first solvent; and The second solvent is evaporated.

17. The method of claim 12, wherein, The first ink comprises a mixture of titanium oxide and / or silver nanoparticles and bifunctional monomers.

18. The method of claim 17, wherein, The mixture is less than 30 wt% of the first ink.

19. The method of claim 17, wherein, The bifunctional monomer includes hexanediol diacrylate.

20. The method of claim 12, further comprising performing a photocuring process and / or a thermocuring process after the step of drying the first ink.

21. The method of claim 12, further comprising spraying a second ink into the first set of openings, the second ink comprising scattering particles and quantum dots.

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