Solid-state imaging device and electronic apparatus

Abstract

A solid-state imaging device is provided that can further improve image quality. The solid-state imaging device includes: a semiconductor substrate; a first photoelectric conversion unit disposed above the semiconductor substrate and converting light into electrical charge; and a second photoelectric conversion unit disposed above the first photoelectric conversion unit and converting light into electrical charge. Both the first and second photoelectric conversion units include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first and second electrodes. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion passing through at least the first photoelectric conversion unit. At least a portion of the outer periphery of the conductive portion is provided with an insulating film portion. The insulating film portion includes at least one layer of insulating film, and the at least one layer of insulating film has a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

Description

Technical Field

[0001] This invention relates to a solid-state imaging device and an electronic device. Background Technology

[0002] Recently, with the increasing popularity of digital cameras, the demand for solid-state imaging devices (image sensors), which are key components of digital cameras, has also grown significantly. Therefore, improving image quality has become an essential factor in terms of the performance of solid-state imaging devices. For example, technologies related to solid-state imaging devices using photoelectric conversion films have been proposed, which include various organic semiconductors that perform photoelectric conversion on light of different wavelengths (see Patent Document 1).

[0003] Citation List

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-191222 Summary of the Invention

[0006] The technical problem to be solved by the present invention

[0007] However, the technology proposed in Patent Document 1 may not improve the image quality that solid-state imaging devices can obtain.

[0008] Therefore, the present invention has been made in view of this situation. The main object of the present invention is to provide a solid-state imaging device capable of achieving higher image quality and an electronic device incorporating the solid-state imaging device.

[0009] Solutions to technical problems

[0010] The inventors have conducted in-depth research to achieve the above objectives, and have successfully improved the image quality of solid-state imaging devices, thus completing this invention.

[0011] Specifically, a first aspect of the present invention provides a solid-state imaging device comprising: a semiconductor substrate; a first photoelectric conversion unit disposed above the semiconductor substrate and converting light into charge; and a second photoelectric conversion unit disposed above the first photoelectric conversion unit and converting light into charge. The first and second photoelectric conversion units each include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first and second electrodes. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion passing through at least the first photoelectric conversion unit. At least a portion of the outer periphery of the conductive portion is provided with an insulating film portion, the insulating film portion comprising at least one layer of insulating film, and the at least one layer of insulating film having a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[0012] According to a first aspect of the solid-state imaging device of the present invention, the at least one insulating film may be disposed between the conductive portion and the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive portion.

[0013] According to a first aspect of the solid-state imaging device, the conductive portion can pass through the first photoelectric conversion unit and reach the interior of the semiconductor substrate, and the at least one insulating film can be disposed between the conductive portion and the first photoelectric conversion unit and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

[0014] According to a first aspect of the solid-state imaging device of the present invention, both the first photoelectric conversion unit and the second photoelectric conversion unit may be arranged to be separate from their respective first electrodes, and both the first photoelectric conversion unit and the second photoelectric conversion unit may include a charge accumulation electrode opposite to their respective photoelectric conversion films through an insulating layer.

[0015] According to a first aspect of the solid-state imaging device of the present invention, the second photoelectric conversion unit may have multiple pixels, each pixel may have one charge accumulation electrode, and the charge accumulation unit may be shared by the multiple pixels.

[0016] According to a solid-state imaging device of a first aspect of the present invention, a first electrode of a first photoelectric conversion unit and a first electrode of a second photoelectric conversion unit can be electrically connected to a charge accumulation unit formed in the semiconductor substrate via a conductive portion passing through at least the first photoelectric conversion unit. At least a portion of the outer periphery of the conductive portion can be provided with the insulating film portion, the insulating film portion can include the at least one layer of insulating film, the at least one layer of insulating film can have a fixed charge of the same type as the charge accumulated in the charge accumulation unit, the first photoelectric conversion unit can have a plurality of first pixels, the second photoelectric conversion unit can have a plurality of second pixels, one first pixel can have one charge accumulation electrode, one second pixel can have one charge accumulation electrode, and the charge accumulation unit can be shared by at least one of the plurality of first pixels and at least one of the plurality of second pixels.

[0017] According to a solid-state imaging device of a first aspect of the present invention, the insulating film portion may include an insulating film having a fixed charge of the same type as the charge accumulated in the charge accumulation unit and an insulating film having a high dielectric constant material.

[0018] According to a first aspect of the solid-state imaging device of the present invention, the insulating film having a high dielectric constant material can be arranged to cover the outer periphery of the conductive portion, the insulating film having a fixed charge can be arranged to cover the outer periphery of the insulating film having a high dielectric constant material, the insulating film having a high dielectric constant material can be arranged between the conductive portion and the insulating film having a fixed charge, and the insulating film having a fixed charge can be arranged between the insulating film having a high dielectric constant material and the first photoelectric conversion unit.

[0019] According to a first aspect of the solid-state imaging device of the present invention, the insulating film having a fixed charge may be arranged to cover the outer periphery of the conductive portion, the insulating film having a high dielectric constant material may be arranged to cover the outer periphery of the insulating film having a fixed charge, the insulating film having a fixed charge may be arranged between the conductive portion and the insulating film having a high dielectric constant material, and the insulating film having a high dielectric constant material may be arranged between the insulating film having a fixed charge and the first photoelectric conversion unit.

[0020] According to a first aspect of the solid-state imaging device of the present invention, both the first photoelectric conversion unit and the second photoelectric conversion unit may further include a transport layer disposed between the first electrode and the photoelectric conversion film.

[0021] According to a solid-state imaging device of a first aspect of the present invention, the at least one insulating film may be disposed between the conductive portion and the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive portion.

[0022] According to a first aspect of the solid-state imaging device, the conductive portion can pass through the first photoelectric conversion unit and reach the interior of the semiconductor substrate, and the at least one insulating film can be disposed between the conductive portion and the first photoelectric conversion unit, the transport layer included in the first photoelectric conversion unit, and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

[0023] Furthermore, a second aspect of the present invention provides a solid-state imaging device comprising: a semiconductor substrate; a first photoelectric conversion unit disposed above the semiconductor substrate and converting light into charge; a second photoelectric conversion unit disposed above the first photoelectric conversion unit and converting light into charge; and a third photoelectric conversion unit disposed above the second photoelectric conversion unit and converting light into charge, wherein the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit each include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode; the first electrode of the second photoelectric conversion unit and a first charge accumulation unit formed in the semiconductor substrate are connected via at least a first electrode passing through the first photoelectric conversion unit. The conductive portions are electrically connected to each other. A first insulating film portion is disposed on at least a portion of the outer periphery of the first conductive portion. The first insulating film portion includes at least one layer of first insulating film. The at least one layer of first insulating film has a fixed charge of the same type as the charge accumulated in the first charge accumulation unit. The first electrode of the third photoelectric conversion unit and the second charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a second conductive portion that passes through at least the second photoelectric conversion unit and the first photoelectric conversion unit. A second insulating film portion is disposed on at least a portion of the outer periphery of the second conductive portion. The second insulating film portion includes at least one layer of second insulating film. The at least one layer of second insulating film has a fixed charge of the same type as the charge accumulated in the second charge accumulation unit.

[0024] According to a second aspect of the solid-state imaging device of the present invention, the at least one first insulating film may be disposed between the first conductive portion and the first photoelectric conversion unit, such that the at least one first insulating film covers the outer periphery of the first conductive portion, and the at least one second insulating film may be disposed between the second conductive portion and the second photoelectric conversion unit and between the second conductive portion and the first photoelectric conversion unit, such that the at least one second insulating film covers the outer periphery of the second conductive portion.

[0025] According to a second aspect of the solid-state imaging device of the present invention, the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit may all be arranged separately from their respective first electrodes, and the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit may all include a charge accumulation electrode opposite to their respective photoelectric conversion films through an insulating layer.

[0026] According to a second aspect of the solid-state imaging device of the present invention, the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit may each further include a transport layer disposed between the first electrode and the photoelectric conversion film.

[0027] According to a solid-state imaging device of a second aspect of the present invention, the at least one first insulating film may be disposed between the first conductive portion and the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one first insulating film covers the outer periphery of the first conductive portion, and the at least one second insulating film may be disposed between the second conductive portion and the second photoelectric conversion unit, the transmission layer included in the second photoelectric conversion unit, the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one second insulating film covers the outer periphery of the second conductive portion.

[0028] Furthermore, a third aspect of the present invention provides a solid-state imaging device comprising: a semiconductor substrate and a photoelectric conversion unit disposed above the semiconductor substrate and converting light into charge, wherein the photoelectric conversion unit includes at least a first electrode, a second electrode, a transport layer, a photoelectric conversion film disposed between the second electrode and the transport layer, and a charge accumulation electrode disposed separately from the first electrode and opposite the transport layer via an insulating layer, the first electrode passing through at least the photoelectric conversion film and the second electrode, the first electrode being electrically connected to the charge accumulation unit formed in the semiconductor substrate, at least a portion of the outer periphery of the first electrode being provided with an insulating film portion, the insulating film portion comprising at least one layer of insulating film, and the at least one layer of insulating film having a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[0029] According to a solid-state imaging device of a third aspect of the present invention, the at least one insulating film may be disposed between the first electrode, the photoelectric conversion film, and the second electrode, such that the at least one insulating film covers the outer periphery of the first electrode.

[0030] Furthermore, a fourth aspect of the present invention provides a solid-state imaging device comprising: a semiconductor substrate, and N (N being an integer greater than or equal to 2) photoelectric conversion units disposed above the semiconductor substrate and converting light into electrical charge, wherein the N photoelectric conversion units have a stacked structure, each of the N photoelectric conversion units including at least a first electrode, a second electrode, and a photoelectric conversion unit disposed between the first electrode and the second electrode, wherein the first electrode of the nth (n being greater than or equal to 2 and less than N) photoelectric conversion unit, counting from the semiconductor substrate side, is transmitted via at least through a layer of the first electrode. The (n-1)th conductive portion of the first to (n-1)th photoelectric conversion units (n is 2 or more and N less; when n = 2, the first photoelectric conversion unit counting from the semiconductor substrate) is electrically connected to the (n-1)th charge accumulation unit formed in the semiconductor substrate. At least a portion of the outer periphery of the (n-1)th conductive portion is provided with an (n-1)th insulating film portion. The (n-1)th insulating film portion includes at least one (n-1)th insulating film, and the at least one (n-1)th insulating film has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit.

[0031] According to a fourth aspect of the solid-state imaging device of the present invention, the at least one layer of the (n-1)th insulating film may be disposed between the (n-1)th conductive portion and the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), such that the at least one layer of the (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion.

[0032] According to a fourth aspect of the solid-state imaging device of the present invention, the (n-1)th conductive portion can pass through the first to (n-1)th photoelectric conversion units (the first photoelectric conversion unit from the semiconductor substrate when n=2) and the semiconductor substrate, and the at least one (n-1)th insulating film can be disposed between the (n-1)th conductive portion and the first to (n-1)th photoelectric conversion units (the first photoelectric conversion unit from the semiconductor substrate when n=2) and the semiconductor substrate, such that the at least one (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion.

[0033] According to a fourth aspect of the solid-state imaging device of the present invention, each of the N photoelectric conversion units may be arranged to be separate from the first electrode included in a corresponding one of the N photoelectric conversion units, and may include a corresponding charge accumulation electrode among the N charge accumulation electrodes opposite to the photoelectric conversion film included in a corresponding one of the N photoelectric conversion units through an insulating layer.

[0034] According to a fourth aspect of the solid-state imaging device of the present invention, the nth photoelectric conversion unit may have a plurality of nth pixels, each nth pixel may have an nth charge accumulation electrode, and the nth charge accumulation unit may be shared by the plurality of nth pixels.

[0035] According to a fourth aspect of the solid-state imaging device of the present invention, the first electrode of each of the nth photoelectric conversion unit and the 1st to (n-1th)th photoelectric conversion units (when n=2, the 1st photoelectric conversion unit from the semiconductor substrate) can be electrically connected to the (n-1th)th charge accumulation unit formed in the semiconductor substrate via at least an (n-1th)th conductive portion passing through the 1st to (n-1th)th photoelectric conversion units (when n=2, the 1st photoelectric conversion unit from the semiconductor substrate). At least a portion of the outer periphery of the (n-1th)th conductive portion can be provided with an (n-1th)th insulating film portion, the (n-1th)th insulating film portion comprising at least one (n-1th)th insulating film. The (n-1)th insulating film of the layer can have a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit. The nth photoelectric conversion unit can have a plurality of nth pixels. The 1st to (n-1)th photoelectric conversion units (when n=2, the 1st photoelectric conversion unit from the semiconductor substrate) can each have a plurality of 1st to (n-1)th pixels. Each nth pixel can have one nth charge accumulation electrode. Each of the 1st to (n-1)th pixels (when n=2, the first pixel) can each have one of the 1st to (n-1)th charge accumulation electrodes. The (n-1)th charge accumulation unit can be shared by at least one of the nth pixels and at least one of the 1st to (n-1)th pixels.

[0036] According to a solid-state imaging device of a fourth aspect of the present invention, the (n-1)th insulating film portion may include an insulating film having a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit and an (n-1)th insulating film having a high dielectric constant material.

[0037] According to a fourth aspect of the solid-state imaging device of the present invention, the (n-1)th insulating film having a high dielectric constant material can be arranged to cover the outer periphery of the (n-1)th conductive portion, the (n-1)th insulating film having a fixed charge can be arranged to cover the outer periphery of the (n-1)th insulating film having a high dielectric constant material, the (n-1)th insulating film having a high dielectric constant material can be arranged between the (n-1)th conductive portion and the (n-1)th insulating film having a fixed charge, and the (n-1)th insulating film having a fixed charge can be arranged between the (n-1)th insulating film having a high dielectric constant material and the (n-1)th photoelectric conversion unit.

[0038] According to a fourth aspect of the solid-state imaging device of the present invention, the (n-1)th insulating film having a fixed charge can be arranged to cover the outer periphery of the (n-1)th conductive portion, the (n-1)th insulating film having a high dielectric constant material can be arranged to cover the outer periphery of the (n-1)th insulating film having a fixed charge, the (n-1)th insulating film having a fixed charge can be arranged between the (n-1)th conductive portion and the (n-1)th insulating film having a high dielectric constant material, and the (n-1)th insulating film having a high dielectric constant material can be arranged between the (n-1)th insulating film having a fixed charge and the photoelectric conversion unit.

[0039] According to a fourth aspect of the solid-state imaging device of the present invention, each of the N photoelectric conversion units may further include one of the N transmission layers disposed between the first electrode and the photoelectric conversion film.

[0040] According to a fourth aspect of the solid-state imaging device of the present invention, the at least one (n-1)th insulating film may be disposed between the (n-1)th conductive portion and the transmission layer included in the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate) and the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), such that the at least one (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion.

[0041] According to a fourth aspect of the solid-state imaging device of the present invention, the nth conductive portion may pass through the first to the (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate) and the semiconductor substrate, and the at least one (n-1)th insulating film may be disposed between the (n-1)th conductive portion and the transmission layer included in the first to the (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), the first to the (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), and the semiconductor substrate, such that the at least one (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion.

[0042] Furthermore, an electronic device is proposed which is equipped with a solid-state imaging device of any one of the first to fourth aspects of the present invention.

[0043] This invention enables higher image quality in solid-state imaging devices. Note that the beneficial effects are not limited to those described herein and may include any of the beneficial effects described in this invention. Attached Figure Description

[0044] Figure 1 The illustration shows a construction example of a solid-state imaging device applying the first embodiment of the present invention.

[0045] Figure 2 The illustration shows a construction example of a solid-state imaging device applying the first embodiment of the present invention.

[0046] Figure 3 The illustration shows a construction example of a solid-state imaging device applying the first embodiment of the present invention.

[0047] Figure 4 The illustration shows a construction example of a solid-state imaging device applying the first embodiment of the present invention.

[0048] Figure 5 The illustration shows a construction example of a solid-state imaging device applying the first embodiment of the present invention.

[0049] Figure 6 The illustration shows a construction example of a solid-state imaging device applying the first embodiment of the present invention.

[0050] Figure 7 The illustration shows a construction example of a solid-state imaging device applying the second embodiment of the present invention.

[0051] Figure 8 The illustration shows a construction example of a solid-state imaging device applying the second embodiment of the present invention.

[0052] Figure 9 The illustration shows a construction example of a solid-state imaging device applying the second embodiment of the present invention.

[0053] Figure 10 The illustration shows a construction example of a solid-state imaging device applying the second embodiment of the present invention.

[0054] Figure 11 The illustration shows a construction example of a solid-state imaging device applying the third embodiment of the present invention.

[0055] Figure 12 This describes a method for manufacturing a solid-state imaging device according to a third embodiment of the present invention.

[0056] Figure 13 The illustration shows a construction example of a solid-state imaging device applying the fourth embodiment of the present invention.

[0057] Figure 14 The illustration shows a construction example of a solid-state imaging device applying the fourth embodiment of the present invention.

[0058] Figure 15 The illustration shows a construction example of a solid-state imaging device applying the fifth embodiment of the present invention.

[0059] Figure 16 The illustration shows a construction example of a solid-state imaging device applying the sixth embodiment of the present invention.

[0060] Figure 17 The illustration shows a construction example of a solid-state imaging device applying the sixth embodiment of the present invention.

[0061] Figure 18 The illustration shows an example of the comparison between an insulating film with a fixed charge and an insulating film without a fixed charge.

[0062] Figure 19 The illustration shows an example of the comparison between an insulating film with a fixed charge and an insulating film without a fixed charge.

[0063] Figure 20 This is a schematic diagram illustrating an overall structural example of the solid-state imaging device of the present invention.

[0064] Figure 21 Examples of use of the solid-state imaging device applying the first to sixth embodiments of the present invention are illustrated.

[0065] Figure 22 This is a functional block diagram illustrating an example of an electronic device applying a seventh embodiment of the present invention.

[0066] Figure 23 The illustration shows a schematic example of an endoscopic surgical system.

[0067] Figure 24 This is a block diagram illustrating a functional configuration example of a camera head and a camera control unit (CCU).

[0068] Figure 25 It is a block diagram illustrating a schematic example of a vehicle control system.

[0069] Figure 26 This is an auxiliary illustration showing an example of the installation location of the vehicle exterior information detection unit and the imaging unit. Detailed Implementation

[0070] Preferred embodiments for carrying out the invention will be described below. The embodiments described below are merely examples of typical embodiments of the invention. Therefore, the scope of the invention should not be narrowly interpreted based on these examples. Furthermore, unless otherwise stated, "upper" in the figures refers to the upward direction or upper side, "lower" refers to the downward direction or lower side, "left" refers to the left direction or left side, and "right" refers to the right direction or right side. Moreover, the same or similar elements or components in the figures are given the same reference numerals, and repeated descriptions will be omitted.

[0071] The explanation will proceed in the following order.

[0072] 1. Overview of this technology

[0073] 2. First Embodiment (Example 1 of a Solid-State Imaging Device)

[0074] 3. Second Embodiment (Example 2 of Solid-State Imaging Device)

[0075] 4. Third Embodiment (Example 3 of a Solid-State Imaging Device)

[0076] 5. Fourth Embodiment (Example 4 of a Solid-State Imaging Device)

[0077] 6. Fifth Embodiment (Example 5 of a Solid-State Imaging Device)

[0078] 7. Sixth Embodiment (Example 6 of a Solid-State Imaging Device)

[0079] 8. Seventh Embodiment (Example of an Electronic Device)

[0080] 9. Examples of the use of solid-state imaging devices applying this technology

[0081] 10. Examples of the application of endoscopic surgical systems

[0082] 11. Examples of applications of moving bodies

[0083] <1. Overview of this technology>

[0084] First, an overview of this technology will be given.

[0085] In recent years, the development of technologies for solid-state imaging devices, such as those for: solid-state imaging devices having a structure of vertically stacked photodiodes that perform photoelectric conversion of light of different wavelengths; solid-state imaging devices using photoelectric conversion films comprising organic semiconductors that perform photoelectric conversion of light of different wavelengths; solid-state imaging devices using photoelectric conversion elements having MIS-type (Metal Insulator Semiconductor) regions; and solid-state imaging devices having a semiconductor layer located between the photoelectric conversion layer and the insulating layer for smooth transport of accumulated charge.

[0086] In the case of a structure having N (N is an integer of 2 or greater) or more photoelectric conversion films (photoelectric conversion units) stacked in the longitudinal direction, it is necessary to separate the lower photoelectric conversion film (photoelectric conversion unit) by using an insulating film passing through the photoelectric conversion unit, and it is necessary to set a signal reading electrode to read the signal of the upper photoelectric conversion film (photoelectric conversion unit).

[0087] However, the signal readout electrode demodulates the potential of at least one photoconversion film (photoconversion unit) in the underlying layer and captures the charge to be read. This can lead to signal degradation. Furthermore, at least one photoconversion film (photoconversion unit) in the underlying layer may be damaged during the formation of the signal readout electrode. This can result in dark current. To address these issues, techniques for designing impurity distributions through ion doping or other methods have been established for photodiodes (PDs) formed on existing semiconductor substrates (Si substrates). However, under current conditions, no techniques have been established to address these issues for photoconversion films using organic semiconductor materials or similar materials.

[0088] In view of this situation, the present invention is proposed. The present invention is characterized by a structure in which the signal readout electrode (including a configuration with a through electrode added) of at least one upper photoelectric conversion film (photoelectric conversion unit) is covered by a film having a fixed charge of the same polarity as the signal charge. For example, when the signal charge to be read is an electron, the fixed charge of the insulating film covering the signal readout electrode and / or the through electrode is a negative fixed charge. When the signal charge to be read is a hole, the fixed charge of the insulating film covering the signal readout electrode and / or the through electrode is a positive fixed charge. This structure at least increases the aperture ratio of at least one lower photoelectric conversion film (photoelectric conversion unit) and reduces image retention and signal degradation. Furthermore, it also enables the reduction of dark current.

[0089] Next, we will refer to Figure 20 An example of the overall structure of the solid-state imaging device of the present invention is described.

[0090] Figure 20The illustration shows the solid-state imaging device of the present invention (in... Figure 20 The diagram shows an example of the overall structure of a solid-state imaging device 1e).

[0091] like Figure 20 As shown, the solid-state imaging device 1e includes a pixel region (commonly referred to as an imaging region, pixel unit) 3e and a peripheral circuit unit. In the pixel region 3e, multiple pixels 2e, each including a photoelectric conversion element, are arranged in a two-dimensional, regular manner on a semiconductor substrate 11e, such as a silicon substrate. Each pixel 2e includes: a photoelectric conversion film constituting the photoelectric conversion unit, for example, a photoelectric conversion film including an organic semiconductor, or a photoelectric conversion film including an inorganic semiconductor (e.g., a photodiode (PD)); and multiple pixel transistors (commonly referred to as MOS transistors). For example, the multiple pixel transistors may include three transistors: a transfer transistor, a reset transistor, and an amplification transistor. Alternatively, a selection transistor may be added to form four transistors. The equivalent circuit of a unit pixel is similar to a conventional equivalent circuit. Therefore, a detailed description of this is omitted. Each pixel 2e may have a shared pixel structure. For example, this shared pixel structure includes multiple photodiodes, multiple transfer transistors, a shared floating diffuser, and shared other pixel transistors arranged in a one-to-one configuration.

[0092] The peripheral circuit unit includes a vertical drive circuit 4e, a column signal processing circuit 5e, a horizontal drive circuit 6e, an output circuit 7e, a control circuit 8e, and other circuits.

[0093] The control circuit 8e receives an input clock and data for indicating the operating mode, and outputs data such as internal information associated with the solid-state imaging device. Specifically, the control circuit 8e generates clock signals and control signals corresponding to the references for the operation of the vertical drive circuit 4e, column signal processing circuit 5e, horizontal drive circuit 6e, and other circuits based on the vertical synchronization signal, horizontal synchronization signal, and master clock. The control circuit 8e then inputs these signals to the vertical drive circuit 4e, column signal processing circuit 5e, horizontal drive circuit 6e, and other circuits.

[0094] The vertical driving circuit 4e includes, for example, a shift register and is configured to select pixel driving wiring, provide pulses for driving pixels to the selected pixel driving wiring, and drive pixels row by row. Specifically, the vertical driving circuit 4e selectively scans each pixel 2e of the pixel region (pixel unit) 3e row by row in the vertical direction and provides a pixel signal to the column signal processing circuit 5e via a vertical signal line 9e. This pixel signal is based on a signal charge generated by the amount of light received by the photoelectric conversion film and photodiode (PD) of each pixel 2e, wherein the photoelectric conversion film is, for example, an organic semiconductor photoelectric conversion film.

[0095] The column signal processing circuit 5e is configured such that it is arranged, for example, for each column of pixel 2e, and performs signal processing such as noise removal on each pixel column to process the signal output from a row of pixels 2e. Specifically, the column signal processing circuit 5e performs signal processing such as CDS, signal amplification, and AD conversion to remove fixed pattern noise specific to pixel 2e. A horizontal selection switch (not shown) is provided between the output stage of each column signal processing circuit 5e and the horizontal signal line 10e and connected to both.

[0096] The horizontal drive circuit 6e includes, for example, a shift register and is configured to sequentially select each column signal processing circuit 5e by sequentially outputting horizontal scan pulses, and cause each column signal processing circuit 5e to output pixel signals to the horizontal signal line 10e.

[0097] Output circuit 7e processes the signals sequentially provided by column signal processing circuit 5e via horizontal signal line 10e and outputs the processed signals. For example, output circuit 7e may buffer signals in some cases, or perform black level adjustment, column change correction, various types of digital signal processing, or similar processing in others. Input / output terminal 12e exchanges signals with external devices.

[0098] The preferred embodiments for carrying out the present invention will now be described in detail with reference to the accompanying drawings. The embodiments described below are examples of general embodiments of the present invention. Therefore, the scope of the present invention should not be narrowly interpreted based on these examples.

[0099] <2. First Embodiment (Example 1 of Solid-State Imaging Device)>

[0100] Reference Figures 1 to 6 and Figure 18 The solid-state imaging device of the first embodiment of the present invention is described (Example 1 of solid-state imaging device).

[0101] First, a reference will be presented. Figure 1 Explanation of the procedure. Figure 1 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 100) according to a first embodiment of the present invention.

[0102] Solid-state imaging device 100 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 100-1, disposed above the semiconductor substrate 30 (on the light incident side, and being...). Figure 1 The first photoelectric conversion unit 100-1 is located above the first photoelectric conversion unit 100-1 (on the light incident side) and converts light into charge; the second photoelectric conversion unit 100-2 is located above the first photoelectric conversion unit 100-1 (on the light incident side) and is a second photoelectric conversion unit 100-1. Figure 1 (on the upper side) and converts light into electric charge.

[0103] The first photoelectric conversion unit 100-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 1 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 1 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0104] The second photoelectric conversion unit 100-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 1 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 1 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0105] In the first photoelectric conversion unit 100-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and in the insulating layer 11, across the transport layer 6, opposite the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 100-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and in the insulating layer 10, across the transport layer 4, opposite the photoelectric conversion film 3 (transport layer 4).

[0106] The first photoelectric conversion unit 100-1 may have a buffer layer between the photoelectric conversion film 5 and the transport layer 6, or a buffer layer between the photoelectric conversion film 5 and the second electrode 2-2. Furthermore, the first photoelectric conversion unit 100-1 may have a charge injection layer between the transport layer 6 and the buffer layer, or a charge injection layer between the second electrode 2-2 and the buffer layer. The second photoelectric conversion unit 100-2 may have a buffer layer between the photoelectric conversion film 3 and the transport layer 4, or a buffer layer between the photoelectric conversion film 3 and the second electrode 2-1. Furthermore, the second photoelectric conversion unit 100-2 may have a charge injection layer between the transport layer 4 and the buffer layer, or a charge injection layer between the second electrode 2-1 and the buffer layer.

[0107] The first electrode 7 of the second photoelectric conversion unit 100-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12 passing through the first photoelectric conversion unit 100-1. Specifically, the solid-state imaging device 100 has a connection hole 1214-1 passing through the insulating layer 10, the first photoelectric conversion unit 100-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 100-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-1. The conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a via 13 formed in the insulating layer 11. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, a connection hole 150-1 is formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 100-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-1.

[0108] In the connection hole 1214-1, an insulating film 51 with a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the photoelectric conversion film 5, and below the photoelectric conversion film 5. Figure 1 Between the lower side of the transmission layer 6, the insulating film 51 covers the outer periphery of the conductive portion 12 (through electrode). Specifically, relative to Figure 1 The connecting hole 1214-1 serves as the center reference in the left-right direction of this figure. On the left side, a photoelectric conversion film 5, a transmission layer 6, an insulating film 51-1 (51), and a conductive part 12 are formed sequentially, while on the right side, a photoelectric conversion film 5, a transmission layer 6, an insulating film 51-2 (51), and a conductive part 12 are formed sequentially. When from... Figure 1 When viewed from above and below, the insulating film 51 extends from the top of the photoelectric conversion film 5. Figure 1 The upper part of the middle layer) extends to the lower part of the transmission layer 6. Figure 1 (the lower side of the film), that is, extending along the entire side of the photoelectric conversion film 5 and along the entire side of the transmission layer 6.

[0109] When the signal charge to be read is an electron, the insulating film 51 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 51 is an insulating film with a positive fixed charge. Because the insulating film 51 is present in the solid-state imaging device 100, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0110] When the insulating film 51 is an insulating film with a negative fixed charge, the insulating film 51 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 51 may also contain an insulating material such as a silicon oxide film, or the insulating film 51 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0111] When the insulating film 51 is an insulating film with a positive fixed charge, the insulating film 51 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 51 may also contain an insulating material such as a silicon oxide film; or, the insulating film 51 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0112] Next, we will refer to Figure 2 Please provide an explanation. Figure 2 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 200) according to a first embodiment of the present invention.

[0113] Solid-state imaging device 200 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 200-1, disposed above the semiconductor substrate 30 (on the light incident side, and being...). Figure 2 The first photoelectric conversion unit 200-1 is located above the first photoelectric conversion unit 200-1 (on the upper side) and converts light into charge; and the second photoelectric conversion unit 200-2 is located above the first photoelectric conversion unit 200-1 (on the light incident side). Figure 2 (on the upper side) and converts light into electric charge.

[0114] The first photoelectric conversion unit 200-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 2 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 2The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0115] The second photoelectric conversion unit 200-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 2 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 2 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0116] In the first photoelectric conversion unit 200-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite to the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 200-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer and opposite to the photoelectric conversion film 3 (transport layer 4).

[0117] The first electrode 7 of the second photoelectric conversion unit 200-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12 passing through the first photoelectric conversion unit 200-1. Specifically, the solid-state imaging device 200 has a connection hole 1214-2 passing through the insulating layer 10, the first photoelectric conversion unit 200-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 200-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-2. The conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a via 13. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, a connection hole 150-2 is formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 200-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-2.

[0118] In the connection hole 1214-2, an insulating film 52 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transmission layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transmission layer 6, such that the insulating film 52 covers the outer periphery of the conductive part 12 (through electrode). Relative to... Figure 2 The connecting hole 1214-2 serves as the center reference in the left-right direction of this figure. On the left side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 52-1 (52), and a conductive part 12 are formed sequentially. On the right side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 52-2 (52), and a conductive part 12 are formed sequentially. When from... Figure 2 When viewed from above and below, the insulating film 52 extends from the first electrode 7 formed in the insulating layer 10 to the through hole 13 formed in the insulating layer 11.

[0119] When the signal charge to be read is an electron, the insulating film 52 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 52 is an insulating film with a positive fixed charge. Because the insulating film 52 is present in the solid-state imaging device 200, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0120] When the insulating film 52 is an insulating film with a negative fixed charge, the insulating film 52 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 52 may also contain an insulating material such as a silicon oxide film, or the insulating film 52 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0121] When the insulating film 52 is an insulating film with a positive fixed charge, the insulating film 52 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 52 may also contain an insulating material such as a silicon oxide film, or the insulating film 52 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0122] The following will refer to Figure 3 Please provide an explanation. Figure 3 This is a plan view illustrating a construction example of a solid-state imaging device (solid-state imaging device 300) according to a first embodiment of the present invention. More specifically, Figure 3 (a) is a diagram illustrating the situation in Figure 2 A planar layout diagram of one pixel of the solid-state imaging device 200 at position E1. Figure 3 (b) is a diagram illustrating the situation in Figure 2 A planar layout diagram of one pixel of the solid-state imaging device 200 at position E2 in the diagram. Figure 3 (c) in the diagram illustrates the situation in... Figure 2 A planar layout diagram of one pixel of the solid-state imaging device 200 at position E3 in the diagram. Figure 3 (d) in the diagram illustrates the... Figure 2 A planar layout diagram of one pixel of the solid-state imaging device 200 at position E4 in the diagram. Figure 3 (e) in the diagram illustrates the... Figure 2 A planar layout diagram of one pixel of the solid-state imaging device 200 at position E5 in the diagram, and Figure 3 (f) in the diagram illustrates the... Figure 2 The planar layout of a pixel of the solid-state imaging device 200 at position E6 is shown. Furthermore, it is assumed that a pixel has a charge accumulation electrode 1-1 or 1-2 (or a photodiode (PD) 9). Figure 2 The solid-state imaging device 200 shown includes: a second pixel having a charge accumulation electrode 1-1 included in a second photoelectric conversion unit 200-2; a first pixel having a charge accumulation electrode 1-2 included in a first photoelectric conversion unit 200-1; and a third pixel having a photodiode (PD) (in some cases, a first pixel, a second pixel, and a third pixel are collectively referred to as a pixel unit, hereinafter the same). Meanwhile, when the charge accumulation electrode 1-1 or 1-2 includes multiple charge accumulation electrode segments, it is assumed that a pixel has multiple charge accumulation electrode segments that combine into a single electrode (a charge accumulation electrode 1-1 or 1-2). In other words, it is not considered that only one charge accumulation electrode segment is provided for each pixel. The above definition of a pixel can at least be applied to this invention.

[0123] Figure 3 (a) illustrates a photoelectric conversion film 3 corresponding to a pixel (a second pixel). The photoelectric conversion film 3 is, for example, a photoelectric conversion film that absorbs green light (e.g., light with a wavelength range of 495 nm to 570 nm).

[0124] Figure 3 (b) illustrates the diagram from Figure 3 Starting from the left side of (b), the first electrode (signal readout electrode) 7 and the charge accumulation electrode 1-1 formed in the insulating layer 10 are arranged sequentially. Figure 3 As shown in (b), the first electrode (signal readout electrode) 7 and the charge accumulation electrode 1-1 are arranged approximately on the same plane. Each second pixel is provided with a charge accumulation unit (floating diffuser (FD)) connected to the first electrode (signal readout electrode) 7 via a conductive portion 12 (through electrode) described below. Figure 3 (b) is not shown in the text.

[0125] Figure 3 (c) illustrates the conductive portion 12 (through electrode) formed in the insulating layer 10 and located in Figure 3 The insulating film 53-c with a fixed negative or positive charge on the left side of (c). Figure 3 As shown in (c), the insulating film 53-c is formed to cover the outer periphery of the conductive part 12 (through electrode).

[0126] Figure 3 Figure (d) illustrates the second electrode 2-2 and both formed on Figure 3 The conductive portion 12 (through electrode) on the left side of (d) and the insulating film 53-d having a fixed negative or positive charge. Figure 3 As shown in (d), the insulating film 53-d is formed to cover the outer periphery of the conductive portion 12 (through electrode). The conductive portion 12 and the second electrode 2-2 are insulated from each other by the insulating film 53-d.

[0127] Figure 3 (e) illustrates the photoelectric conversion film 5 corresponding to one pixel (a first pixel), both formed on... Figure 3 The conductive portion 12 (through electrode) on the left side of (e) and the insulating film 53-e having a fixed negative or positive charge. For example, the photoelectric conversion film 5 is a photoelectric conversion film that absorbs red light (e.g., light with a wavelength range of 620 nm to 750 nm). Figure 3 As shown in (e), the insulating film 53-e is formed in such a way that it covers the outer periphery of the conductive portion 12 (through electrode). The signal charge (electron or hole) photoelectrically converted by the photoelectric conversion film 5 is not captured by the conductive portion 12 (through electrode) present in the insulating film 53-e.

[0128] Figure 3 (f) from Figure 3 Starting from the left side of (f), the diagram sequentially shows a conductive portion 12 (through electrode) formed in the insulating layer 11, an insulating film 53-f formed to cover the outer periphery of the conductive portion 12 (through electrode) and having a fixed negative or positive charge, charge accumulation electrodes 1-2, and a first electrode (signal readout electrode) 8. Figure 3 As shown in (f), the insulating film 53-f and the insulating layer 11 insulate the conductive portion 12 (through electrode) from the charge accumulation electrode 1-2, and the insulating layer 11 insulates the charge accumulation electrode 1-2 from the first electrode (signal readout electrode) 8. Furthermore, the first electrode (signal readout electrode) 8 and the charge accumulation electrode 1-2 are arranged substantially in the same plane. Each first pixel is provided with a conductive portion 15 (through electrode)... Figure 3 (Not shown in the image) A charge accumulation unit (floating diffuser (FD)) connected to the first electrode (signal readout electrode) 8. Figure 3 (f) is not shown).

[0129] Next, a reference will be presented. Figure 4 Explanation of the procedure. Figure 4 This is a plan view illustrating a construction example of a solid-state imaging device (solid-state imaging device 400) according to a first embodiment of the present invention. More specifically, Figure 4 (a) is a diagram illustrating the situation in Figure 2 A planar layout diagram of the four pixels of the solid-state imaging device 200 at position E1. Figure 4 (b) is a diagram illustrating the situation in Figure 2 A planar layout diagram of the four pixels of the solid-state imaging device 200 at position E2. Figure 4 (c) is a diagram illustrating the situation in Figure 2 A planar layout diagram of the four pixels of the solid-state imaging device 200 at position E3. Figure 4 (d) is a diagram illustrating the situation in Figure 2 A planar layout diagram of the four pixels of the solid-state imaging device 200 at position E4. Figure 4 (e) in the diagram illustrates the... Figure 2 A planar layout diagram of the four pixels of the solid-state imaging device 200 at position E5 in the image, and Figure 4 (f) in the diagram illustrates the... Figure 2 A planar layout diagram of the four pixels of the solid-state imaging device 200 at position E6. Meanwhile, as mentioned above, Figure 2The solid-state imaging device 200 shown includes: a second pixel having a charge accumulation electrode 1-1 included in the second photoelectric conversion unit 200-2; a first pixel having a charge accumulation electrode 1-2 included in the first photoelectric conversion unit 200-1; and a third pixel having a photodiode (PD) (in some cases, a first pixel, a second pixel, and a third pixel are collectively referred to as a pixel unit, hereinafter the same). Therefore, strictly speaking, Figure 2 The figure shows a cross-sectional view of a solid-state imaging device 200 with a pixel unit. Figure 4 The diagram in the middle shows that the planar layout of the four pixel units is inconsistent.

[0130] Figure 4 (a) illustrates the photoelectric conversion film 3 (photoelectric conversion films 3-1 to 3-4) corresponding to four pixels (four second pixels). For example, each photoelectric conversion film 3 is a photoelectric conversion film that absorbs green light (e.g., light with a wavelength range of 495 nm to 570 nm).

[0131] Figure 4 Figure (b) illustrates the charge accumulation electrodes 1-1-1 to 1-1-4 (corresponding to four pixels) formed in the insulating layer 10-1 for each second pixel. The first electrode (signal readout electrode) 7-1 is disposed at the center of the four pixels. Figure 4 As shown in (b), the first electrode (signal readout electrode) 7-1 and four charge accumulation electrodes 1-1-1 to 1-1-4 are arranged approximately in the same plane. The first electrode (signal readout electrode) 7-1 and a charge accumulation unit (floating diffuser (FD)) connected to the first electrode (signal readout electrode) 7-1 via a conductive portion 12-1 (through electrode) described below are also present. Figure 4 (b) is not shown and is shared by four second pixels. Note that the number of second pixels sharing the first electrode (signal readout electrode) 7-1 and the charge accumulation unit (floating diffuser (FD)) is not limited to four.

[0132] Figure 4 (c) shows that they are all formed in Figure 4 The central portion (the central portion of the four pixels) of (c) is formed in the conductive portion 12-1 (through electrode) in the insulating layer 10-1 and the insulating film 54-c having a fixed negative or positive charge. Figure 4 As shown in (c), the insulating film 54-c is formed in such a way that it covers the outer periphery of the conductive part 12-1 (through electrode).

[0133] Figure 4 Figure (d) illustrates the second electrode 2-2-1 and both formed on Figure 4The conductive portion 12-1 (through electrode) of the central part (the central part of the four pixels) and the insulating film 54-d with a fixed negative or positive charge. Figure 4 As shown in (d), the insulating film 54-d is formed to cover the outer periphery of the conductive portion 12-1 (through electrode). The conductive portion 12-1 and the second electrode 2-2-1 are insulated from each other by the insulating film 54-d.

[0134] Figure 4 Figure (e) illustrates the photoelectric conversion film 5-1 corresponding to the four pixels, and both are formed on... Figure 4 The conductive portion 12-1 (through electrode) of the central portion (the central portion of the four pixels) and the insulating film 54-e having a fixed negative or positive charge. For example, the photoelectric conversion film 5-1 corresponding to the four pixels is a photoelectric conversion film that absorbs red light (e.g., light with a wavelength range of 620 nm to 750 nm). Figure 4 As shown in (e), the insulating film 54-e is formed in such a way that it covers the outer periphery of the conductive portion 12-1 (through electrode). Due to the presence of the insulating film 54-e, the signal charge (electron or hole) converted by the photoelectric conversion film 5 (photoelectric conversion films 5-1 to 5-4) is not captured by the conductive portion 12-1 (through electrode).

[0135] Figure 4 (f) illustrates the charge accumulation electrodes 1-2-1 to 1-2-4 (corresponding to four pixels) formed in the insulating layer 11-1 for each second pixel. A conductive portion 12-1 (through electrode) and an insulating film 54-f with a fixed negative or positive charge, formed to cover the outer periphery of the conductive portion 12-1 (through electrode), are provided at the center of each of the four pixels. Furthermore, a first electrode (signal readout electrode) 8-1 is formed to the upper right of the charge accumulation electrode 1-2-1, a first electrode (signal readout electrode) 8-2 is formed to the lower right of the charge accumulation electrode 1-2-2, a first electrode (signal readout electrode) 8-3 is formed to the lower left of the charge accumulation electrode 1-2-3, and a first electrode (signal readout electrode) 8-4 is formed to the upper left of the charge accumulation electrode 1-2-4.

[0136] like Figure 4 As shown in (f), the insulating film 54-f and the insulating layer 11-1 insulate the conductive portion 12-1 (through electrode) from the charge accumulation electrodes 1-2-1 to 1-2-4, and the insulating layer 11 insulates the charge accumulation electrodes 1-2-1 to 1-2-4 from the first electrodes (signal readout electrodes) 8-1 to 8-4. Furthermore, as... Figure 4 As shown in (f), the first electrodes (signal readout electrodes) 8-1 to 8-4 and the charge accumulation electrodes 1-2-1 to 1-2-4 are arranged substantially in the same plane. The first electrode (signal readout electrode) 8-1 and the charge accumulation electrodes 1-2-1 to 1-2-4 are connected via the conductive portion 15 (through electrode) Figure 4 (Not shown in the image) A charge accumulation unit (floating diffuser (FD)) connected to the first electrode 8-1 ( Figure 4 (f) not shown) is the pixel to the right of the pixel having charge accumulation electrode 1-2-1, and the pixel located to the right of the pixel having charge accumulation electrode 1-2-1. Figure 4 (f) not shown), the pixel located above the pixel having charge accumulation electrode 1-2-1 ( Figure 4 (f) not shown) and the pixel located to the upper right of the pixel having charge accumulation electrode 1-2-1 ( Figure 4 (f) not shown) (a total of four pixels) are shared. The first electrode (signal readout electrode) 8-2 and the electrode via the conductive part 15 (through electrode) Figure 4 (Not shown in the image) A charge accumulation unit (floating diffuser (FD)) connected to the first electrode 8-2 ( Figure 4 (f) not shown) consists of a pixel having a charge accumulation electrode 1-2-2 and a pixel located to the right of the pixel having a charge accumulation electrode 1-2-2. Figure 4 (f) not shown), the pixel located below the pixel having charge accumulation electrode 1-2-2 ( Figure 4 (f) not shown) and the pixel located to the lower right of the pixel having charge accumulation electrode 1-2-2 ( Figure 4 (f) not shown) (a total of four pixels) are shared. The first electrode (signal readout electrode) 8-3 and the electrode via the conductive part 15 (through electrode) Figure 4 (Not shown in the image) A charge accumulation unit (floating diffuser (FD)) connected to the first electrode 8-3 ( Figure 4 (f) not shown) consists of a pixel having charge accumulation electrodes 1-2-3, and a pixel located to the left of the pixel having charge accumulation electrodes 1-2-3. Figure 4 (f) not shown), the pixel located below the pixel having charge accumulation electrodes 1-2-3 ( Figure 4 (f) not shown) and the pixel located to the lower left of the pixel having charge accumulation electrodes 1-2-3 ( Figure 4 (f) not shown) (a total of four pixels) are shared. The first electrode (signal readout electrode) 8-4 and via the conductive part 15 (through electrode) Figure 4 (Not shown in the image) A charge accumulation unit (floating diffuser (FD)) connected to the first electrode 8-4 ( Figure 4 (f) (not shown) consists of a pixel having charge accumulation electrodes 1-2-4 and a pixel located to the left of the pixel having charge accumulation electrodes 1-2-4. Figure 4 (f) not shown), the pixel located above the pixel having charge accumulation electrodes 1-2-4 ( Figure 4(f) not shown) and the pixel located to the upper left of the pixel with charge accumulation electrodes 1-2-4. Figure 4 (f) (not shown) (a total of four pixels) are shared. Note that the number of second pixels sharing the first electrode (signal readout electrode) 8-1 and the charge accumulation unit (floating diffuser (FD)) is not limited to four. The number of second pixels sharing the first electrode (signal readout electrode) 8-2 and the charge accumulation unit (floating diffuser (FD)) is not limited to four. The number of second pixels sharing the first electrode (signal readout electrode) 8-3 and the charge accumulation unit (floating diffuser (FD)) is not limited to four. The number of second pixels sharing the first electrode (signal readout electrode) 8-4 and the charge accumulation unit (floating diffuser (FD)) is not limited to four.

[0137] Now refer to Figure 5 Please provide an explanation. Figure 5 (a) is a plan view illustrating a construction example of a solid-state imaging device (solid-state imaging device 500a) according to a first embodiment of the present invention. More specifically, Figure 5 (a) is a diagram illustrating the situation in Figure 3 The planar layout diagram of the state in (f) where the light-shielding electrodes are arranged.

[0138] Figure 5 (b) is a plan view illustrating a construction example of a solid-state imaging device (solid-state imaging device 500b) according to a first embodiment of the present invention. More specifically, Figure 5 (b) is a diagram illustrating the situation in Figure 4 The planar layout diagram of the state in (f) where the light-shielding electrodes are arranged.

[0139] Figure 5 Figure (a) illustrates a shielding electrode 60 disposed around a conductive portion 12 (through electrode) and an insulating film 55-a, the insulating film 55-a being formed to cover the outer periphery of the conductive portion 12 (through electrode) and having a fixed negative or positive charge. The shielding electrode 60 is formed around the charge accumulation electrodes 1-2 and the first electrode (signal readout electrode) 8.

[0140] Figure 5Figure (b) illustrates a shielding electrode 61 disposed around the conductive portion 12-1 (through electrode) and the insulating film 55-b. The insulating film 55-b is formed to cover the outer periphery of the conductive portion 12-1 (through electrode) and has a fixed negative or positive charge. Furthermore, based on the center portion of the four pixels, the shielding electrode 61 is formed as a charge accumulation electrode 1-2-1 surrounding the upper right pixel of the four pixels, a charge accumulation electrode 1-2-2 surrounding the lower right pixel of the four pixels, a charge accumulation electrode 1-2-3 surrounding the lower left pixel of the four pixels, and a charge accumulation electrode 1-2-4 surrounding the upper left pixel of the four pixels.

[0141] Next, we will refer to Figure 6 Please provide an explanation. Figure 6 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 600) according to a first embodiment of the present invention.

[0142] Solid-state imaging device 600 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 600-1, disposed above the semiconductor substrate 30 (on the light incident side, and being...). Figure 6 The first photoelectric conversion unit 600-1 is located above the first photoelectric conversion unit 600-1 (on the upper side) and converts light into charge; and the second photoelectric conversion unit 600-2 is located above the first photoelectric conversion unit 600-1 (on the light incident side). Figure 6 (on the upper side) and converts light into electric charge.

[0143] The first photoelectric conversion unit 600-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 6 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 6 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0144] The second photoelectric conversion unit 600-2 includes: a first electrode 7 (corresponding to the readout electrode and...) Figure 6 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 6 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0145] In the first photoelectric conversion unit 600-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 600-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite the photoelectric conversion film 3 (transport layer 4).

[0146] The first electrode 7 of the second photoelectric conversion unit 600-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12 passing through the first photoelectric conversion unit 600-1. Specifically, the solid-state imaging device 600 has a connection hole 1214-6 passing through the insulating layer 10, the first photoelectric conversion unit 600-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 600-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-6. The conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, a connection hole 150-6 is formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 600-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-6.

[0147] In the connection hole 1214-6, an insulating film 76 containing a high dielectric constant material is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transport layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transport layer 6, such that the insulating film 76 covers the outer periphery of the conductive part 12 (through electrode), and an insulating film 56 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transport layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transport layer 6, such that the insulating film 56 covers the outer periphery of the insulating film 76 containing the high dielectric constant material. Specifically, relative to Figure 6The connecting hole 1214-6 serves as the center reference in the left-right direction of this figure. On the left side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 56-1 (56), an insulating film 76-1 (76), and a conductive part 12 are formed sequentially. On the right side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 56-2 (56), an insulating film 76-2 (76), and a conductive part 12 are formed sequentially. When from... Figure 6 When viewed from above and below, insulating films 56 and 76 extend from the first electrode 7 formed in the insulating layer 10 to the through hole 13 formed in the insulating layer 11.

[0148] When the signal charge to be read is an electron, the insulating film 56 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 56 is an insulating film with a positive fixed charge. Because the insulating film 56 is present in the solid-state imaging device 600, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0149] When the insulating film 56 is an insulating film with a negative fixed charge, the insulating film 56 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 56 may also contain an insulating material such as a silicon oxide film, or the insulating film 56 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0150] When the insulating film 56 is an insulating film with a positive fixed charge, the insulating film 56 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 56 may also contain an insulating material such as a silicon oxide film, or the insulating film 56 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0151] By using an insulating film 76 containing a material with a high dielectric constant, the effects of potential modulation generated by the through electrode can be further reduced. For example, the insulating film 76 containing a material with a high dielectric constant may contain at least one material selected from the group consisting of hafnium oxide (HfO2), aluminum oxide (Al2O3), titanium oxide (TiO2), and STO (Strontium Titanium Oxide).

[0152] The insulating film 56 with a fixed charge and the insulating film 76 containing a material with a high dielectric constant can have a double-layer structure (double-film structure). However, it is not required that the insulating film 56 and the insulating film 76 have this structure. For example, the insulating film 56 with a fixed charge and the insulating film 76 containing a material with a high dielectric constant can be unified into a single layer (single film).

[0153] Finally, refer to Figure 18 Please provide an explanation. Figure 18 The illustration shows an example of a comparison between an insulating film with a fixed charge and an insulating film without a fixed charge. More specifically, Figure 18 (a) illustrates an insulating film 5018 formed to cover the outer periphery of the conductive portion 12 but without a fixed charge. Figure 18 The left portion of (a) illustrates insulating film 5018-1, while Figure 18 The right side of (a) illustrates the insulating film 5018-2. Figure 18 (b) illustrates a structure formed to cover the outer periphery of the conductive portion 12 and having a fixed charge. Figure 18 (b) is an insulating film with a negative fixed charge m) 518 ( Figure 18 The left portion of (b) illustrates insulating film 518-1, while Figure 18 The right side of (b) illustrates the insulating film 518-2.

[0154] like Figure 18 As shown in (a), the signal charge generated by photoelectric conversion using the photoelectric conversion film 5 (in) Figure 18 In case (a), electrons are captured by the conductive portion 12 (through electrode) as indicated by arrow S18a. In this case, the aperture ratio of the photoelectric conversion film 5 decreases, and the afterimage and random noise become worse.

[0155] like Figure 18 As shown in (b), the signal charge generated by photoelectric conversion using the photoelectric conversion film 5 (in) Figure 18In case (b), electrons are not captured by the conductive portion 12 (through electrode), but are accumulated in the transport layer 6 as shown by arrow S18b. In this case, the aperture ratio of the photoelectric conversion film 5 does not decrease, and image retention and random noise do not worsen. Therefore, dark current is improved. Furthermore, a reference is no longer needed. Figure 5 The aforementioned shielding electrode. Furthermore, for example, by eliminating the necessity of the shielding electrode, the number of electrons in the photodiode (PD) can be increased. Additionally, the area of ​​the charge accumulation electrodes 1-2 can be increased based on the space gained by eliminating the necessity of the shielding electrode.

[0156] The details described above in relation to the solid-state imaging device of the first embodiment of the present invention (Example 1 of the solid-state imaging device) can be applied to the solid-state imaging devices of the second to sixth embodiments of the present invention described below, provided that no technical contradiction is created.

[0157] <3. Second Embodiment (Example 2 of Solid-State Imaging Device)>

[0158] Reference Figures 7 to 10 A solid-state imaging device according to a second embodiment of the present invention (Example 2 of solid-state imaging device) is described.

[0159] First, a reference will be presented. Figure 7 Explanation of the procedure. Figure 7 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 700) according to a second embodiment of the present invention.

[0160] The solid-state imaging device 700 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 700-1, disposed above the semiconductor substrate 30 (on the light incident side, and being...). Figure 7 The first photoelectric conversion unit 700-1 is located above the first photoelectric conversion unit 700-1 (on the upper side) and converts light into charge; the second photoelectric conversion unit 700-2 is located above the first photoelectric conversion unit 700-1 (on the light incident side) and is a photoelectric conversion unit 700-1. Figure 7 (on the upper side) and converts light into electric charge.

[0161] The first photoelectric conversion unit 700-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 7 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 7 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0162] The second photoelectric conversion unit 700-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 7 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 7 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0163] In the first photoelectric conversion unit 700-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5. The charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite to the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 700-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3. The charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite to the photoelectric conversion film 3 (transport layer 4).

[0164] The first electrode 7 of the second photoelectric conversion unit 700-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12 passing through the first photoelectric conversion unit 700-1. Specifically, the solid-state imaging device 700 has a connection hole 1214-7 passing through the insulating layer 10, the first photoelectric conversion unit 700-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 700-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-7. The conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, a connection hole 150-7 is formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 700-1 to the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-7.

[0165] In the connection hole 1214-7, an insulating film 57 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transmission layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transmission layer 6, such that the insulating film 57 covers the outer periphery of the conductive part 12 (through electrode). Specifically, relative to Figure 7The connecting hole 1214-7 serves as the center reference in the left-right direction of this figure. On the left side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 57-1 (57), and a conductive part 12 are formed sequentially. On the right side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 57-2 (57), and a conductive part 12 are formed sequentially. When from... Figure 7 When viewed from above, the insulating film 57 extends from the insulating film 57-3 (57) which has a flat shape (solid shape) and is formed in the insulating layer 10 to the through hole 13 formed in the insulating layer 11.

[0166] In the case of the solid-state imaging device 700, after completing until Figure 7 After Q7 is formed, that is, after the semiconductor substrate 30, the first photoelectric conversion unit 700-1 and the insulating layer 10 are formed, the connection hole 1214-7 is formed with a height horizontal from the position of Q7 to the position of the first electrode 8 (through hole 13). Figure 7 The insulating film 57 (in the vertical direction) passes through the interior of the solid-state imaging device 700. Thereafter, an insulating film 57 is embedded in the connection hole 1214-7 by, for example, an ALD method, and an insulating film 57-3 (57) is formed on the insulating layer 10 in a solid shape (flat shape). Note that the insulating film 57-3 (57) can be removed by etching or the like after its formation.

[0167] When the signal charge to be read is an electron, the insulating film 57 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 57 is an insulating film with a positive fixed charge. Because the insulating film 57 is present in the solid-state imaging device 700, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0168] When the insulating film 57 is an insulating film with a negative fixed charge, the insulating film 57 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 57 may also contain an insulating material such as a silicon oxide film, or the insulating film 57 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0169] When the insulating film 57 is an insulating film with a positive fixed charge, the insulating film 57 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 57 may also contain an insulating material such as a silicon oxide film, or the insulating film 57 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0170] Next, we will refer to Figure 8 Please provide an explanation. Figure 8 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 800) according to a second embodiment of the present invention.

[0171] Solid-state imaging device 800 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 800-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 8 The first photoelectric conversion unit 800-1 is located above the first photoelectric conversion unit 800-1 (on the upper side) and converts light into charge; the second photoelectric conversion unit 800-2 is located above the first photoelectric conversion unit 800-1 (on the light incident side and the upper side). Figure 8 (on the upper side) and converts light into electric charge.

[0172] The first photoelectric conversion unit 800-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 8 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 8 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0173] The second photoelectric conversion unit 800-2 includes: a first electrode 7 (corresponding to the readout electrode and...) Figure 8 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 8 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0174] In the first photoelectric conversion unit 800-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite to the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 800-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite to the photoelectric conversion film 3 (transport layer 4).

[0175] The first electrode 7 of the second photoelectric conversion unit 800-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12-2 passing through the first photoelectric conversion unit 800-1 and the semiconductor substrate 30. Specifically, the solid-state imaging device 800 has a connection hole 1214-8 passing through the insulating layer 10, the first photoelectric conversion unit 800-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 800-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12-2 is formed in the connection hole 1214-8. The first electrode 7 is connected to the charge accumulation unit 41 via the conductive portion (through electrode) 12-2. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. In addition, a connection hole 150-8 is formed passing through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 800-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-8.

[0176] In the connection hole 1214-8, an insulating film 58 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive portion 12-2 (through electrode) and the insulating layer 10, the first photoelectric conversion unit 800-1, and the semiconductor substrate 30, such that the insulating film 58 covers the outer periphery of the conductive portion 12-2 (through electrode). Specifically, relative to Figure 8 The connecting hole 1214-8 serves as the center reference in the left-right direction of this figure. On the left side, an insulating layer 10, a first photoelectric conversion unit 800-1, a semiconductor substrate 30, an insulating film 58-1 (58), and a conductive portion 12-2 are formed sequentially. On the right side, the same components are formed sequentially. Figure 8When viewed from above and below, the insulating film 58 extends from the first electrode 7 formed in the insulating layer 10 to the charge accumulation unit 41 formed in the semiconductor substrate 30.

[0177] In the case of solid-state imaging device 800, after completing the process... Figure 8 After the formation of Q8, that is, after the formation of the semiconductor substrate 30, the first photoelectric conversion unit 800-1 and the insulating layer 10, the connection hole 1214-8 is formed with a height level from the position of Q8 to the position of the charge accumulation unit 41. Figure 8 The conductive part 12-2 and the insulating film 58 are then inserted into the connection hole 1214-8 in the vertical direction.

[0178] When the signal charge to be read is an electron, the insulating film 58 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 58 is an insulating film with a positive fixed charge. Because the insulating film 58 is present in the solid-state imaging device 800, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0179] When the insulating film 58 is an insulating film with a negative fixed charge, the insulating film 58 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 58 may also contain an insulating material such as a silicon oxide film, or the insulating film 58 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0180] When the insulating film 58 is an insulating film with a positive fixed charge, the insulating film 58 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 58 may also contain an insulating material such as a silicon oxide film, or the insulating film 58 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0181] Now refer to Figure 9 Please provide an explanation. Figure 9 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 900) according to a second embodiment of the present invention.

[0182] The solid-state imaging device 900 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 900-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 9 The upper side of the first photoelectric conversion unit 900-1 converts light into charge; and the second photoelectric conversion unit 900-2 is disposed above the first photoelectric conversion unit 900-1 (on the light incident side and the upper side of the first photoelectric conversion unit 900-1). Figure 9 (on the upper side) and converts light into electric charge.

[0183] The first photoelectric conversion unit 900-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 9 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 9 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0184] The second photoelectric conversion unit 900-2 includes: a first electrode 7 (corresponding to the readout electrode and...) Figure 9 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 9 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0185] In the first photoelectric conversion unit 900-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite to the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 900-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite to the photoelectric conversion film 3 (transport layer 4).

[0186] The first electrode 7 of the second photoelectric conversion unit 900-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12-3 passing through the first photoelectric conversion unit 900-1 and the semiconductor substrate 30. Specifically, the solid-state imaging device 900 has a connection hole 1214-9 passing through the insulating layer 10, the first photoelectric conversion unit 900-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 900-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12-3 is formed in the connection hole 1214-9. The first electrode 7 is connected to the charge accumulation unit 41 via the conductive portion (through electrode) 12-3. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. In addition, a connection hole 150-9 passing through the insulating layer 11 and the semiconductor substrate 30 is formed to electrically connect the first electrode 8 of the first photoelectric conversion unit 900-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-9.

[0187] In the connection hole 1214-9, an insulating film 59 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive portion 12-3 (through electrode) and the insulating layer 10, the first photoelectric conversion unit 900-1, and the semiconductor substrate 30, such that the insulating film 59 covers the outer periphery of the conductive portion 12-3 (through electrode). Specifically, relative to Figure 9 The connecting hole 1214-9 serves as the center reference in the left-right direction of this figure. On the left side, an insulating layer 10, a first photoelectric conversion unit 900-1, a semiconductor substrate 30, an insulating film 59-1 (59), and a conductive portion 12-3 are formed sequentially. On the right side, the same components are formed sequentially. Figure 9 When viewed from above, the insulating film 59 extends from the insulating film 59-3 (59) formed in the insulating layer 10 and having a solid bottom shape (flat shape) to the charge accumulation unit 41 formed in the semiconductor substrate 30.

[0188] In the case of solid-state imaging device 900, after completing to Figure 9 After Q9 is formed, that is, after the semiconductor substrate 30, the first photoelectric conversion unit 900-1 and the insulating layer 10 are formed, the connection hole 1214-9 is formed with a height horizontal from the position of Q9 to the position of the charge accumulation unit 41. Figure 9The insulating film 59 (in the vertical direction) passes through the interior of the solid-state imaging device 900. Thereafter, the insulating film 59 is embedded in the connection hole 1214-9 by, for example, an ALD method, and the insulating film 59-3 (59) is formed on the insulating layer 10 in a solid shape (flat shape). Note that the insulating film 59-3 (59) can be removed by etching or the like after its formation.

[0189] When the signal charge to be read is an electron, the insulating film 59 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 59 is an insulating film with a positive fixed charge. Because the insulating film 59 is present in the solid-state imaging device 900, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12-3 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrode 1-2.

[0190] When the insulating film 59 is an insulating film with a negative fixed charge, the insulating film 59 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 59 may also contain an insulating material such as a silicon oxide film, or the insulating film 59 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0191] When the insulating film 59 is an insulating film with a positive fixed charge, the insulating film 59 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 59 may also contain an insulating material such as a silicon oxide film, or the insulating film 59 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0192] Finally, refer to Figure 10 Please provide an explanation. Figure 10 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1000) according to a second embodiment of the present invention.

[0193] Solid-state imaging device 1000 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1000-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 10 The first photoelectric conversion unit 1000-1 is located above the first photoelectric conversion unit 1000-1 (on the upper side) and converts light into charge; the second photoelectric conversion unit 1000-2 is located above the first photoelectric conversion unit 1000-1 (on the light incident side and the upper side). Figure 10 (on the upper side) and converts light into electric charge.

[0194] The first photoelectric conversion unit 1000-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 10 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 10 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0195] The second photoelectric conversion unit 1000-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 10 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 10 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0196] In the first photoelectric conversion unit 1000-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite to the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 1000-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite to the photoelectric conversion film 3 (transport layer 4).

[0197] The first electrode 7 of the second photoelectric conversion unit 1000-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion (through electrode) 12 passing through the first photoelectric conversion unit 1000-1. Specifically, the solid-state imaging device 1000 has a connection hole 1214-10 passing through the insulating layer 10, the first photoelectric conversion unit 1000-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 1000-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-10. The conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, a connection hole 150-10 is formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 1000-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-10.

[0198] In the connection holes 1214-10, an insulating film 510 with a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed below the conductive part 12 (through electrode) and the photoelectric conversion film 5. Figure 10 Between the transmission layer 6 (lower side) and the insulating layer 11 below the transmission layer 6, the insulating film 510 covers the outer periphery of the conductive portion 12 (through electrode). Specifically, relative to the center reference in the left-right direction of this figure... Figure 10 The connecting hole 1214-10 has a photoelectric conversion film 5, a transmission layer 6, an insulating layer 11, an insulating film 510-1 (510), and a conductive part 12 formed sequentially on the left side, and a photoelectric conversion film 5, a transmission layer 6, an insulating layer 11, an insulating film 510-2 (510), and a conductive part 12 formed sequentially on the right side. When from Figure 10 When viewed from above and below, the insulating film 510 extends from the top of the photoelectric conversion film 5. Figure 10 (on the upper side) extends to the through hole 13 formed in the insulating layer 11.

[0199] When the signal charge to be read is an electron, the insulating film 510 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 510 is an insulating film with a positive fixed charge. Because the insulating film 510 is present in the solid-state imaging device 1000, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0200] When the insulating film 510 is an insulating film with a negative fixed charge, the insulating film 510 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 510 may also contain an insulating material such as a silicon oxide film, or the insulating film 510 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0201] When the insulating film 510 is an insulating film with a positive fixed charge, the insulating film 510 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 510 may also contain an insulating material such as a silicon oxide film, or the insulating film 510 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0202] The details described above in relation to the solid-state imaging device of the second embodiment of the present invention (Example 2 of solid-state imaging device) can be applied to the solid-state imaging device of the first embodiment of the present invention described above and the solid-state imaging devices of the third to sixth embodiments of the present invention described below, as long as no technical contradiction is caused.

[0203] <4. Third Embodiment (Example 3 of Solid-State Imaging Devices)>

[0204] Reference Figure 11 and Figure 12 The solid-state imaging device of the third embodiment of the present invention (Example 3 of solid-state imaging device) is described.

[0205] First, refer to Figure 11 Please provide an explanation. Figure 11 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1100) according to a third embodiment of the present invention.

[0206] Solid-state imaging device 1100 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1100-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 11 The upper side of the first photoelectric conversion unit 1100-1 converts light into charge; and the second photoelectric conversion unit 1100-2 is disposed above the first photoelectric conversion unit 1100-1 (on the light incident side and the upper side of the first photoelectric conversion unit 1100-1). Figure 11 (on the upper side) and converts light into electric charge.

[0207] The first photoelectric conversion unit 1100-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 11 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 11 The first photoelectric conversion unit 1100-1 has an upper electrode and a photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2. Furthermore, in the first photoelectric conversion unit 1100-1, a transmission layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is positioned opposite the photoelectric conversion film 5 (transmission layer 6) across the transmission layer 6.

[0208] The second photoelectric conversion unit 1100-2 includes: a first electrode 7000, a second electrode 2-1, a transmission layer 4-1, and a photoelectric conversion film 3 disposed between the second electrode 2-1 and the transmission layer 4-1. The second photoelectric conversion unit 1100-2 also includes a charge accumulation electrode 1-10, which is disposed separately from the first electrode 7000 and located in the insulating layer 10A, at a position opposite to the transmission layer 4-1, separated from the insulating layer 10A.

[0209] The first electrode 7000 passes through the photoelectric conversion film 3 and the second electrode 2-1. The first electrode 7000 is electrically connected to the charge accumulation unit 41 formed in the semiconductor substrate 30. Specifically, the solid-state imaging device 1100 has a connection hole 7000-1 passing through the photoelectric conversion film 3, the second electrode 2-1, and the insulating layer 10-1 included in the second photoelectric conversion unit 1100-2, and a connection hole 1214-11 passing through the first photoelectric conversion unit 1100-1 (note that the first photoelectric conversion unit 1100-1 includes the insulating layer 10-2) and the semiconductor substrate 30, so as to electrically connect the first electrode 7000 of the second photoelectric conversion unit 1100-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12-11 constituting the first electrode 7000 is formed in the connection hole 7000-1. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-11. Furthermore, the first electrode 7000 (conductive portion 12-11) and the conductive portion (through electrode) 12 are connected to each other via a through hole 131 located at the boundary portion (P11) between the insulating layer 10-1 and the insulating layer 10-2. The conductive portion (through electrode) 12 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13 formed in the insulating layer 11. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. In addition, a connection hole 150-11 is formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 1100-1 to the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-11.

[0210] In the connection hole 7000-1, an insulating film 511a with a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12-11 (through electrode) and the photoelectric conversion film 3, and below the photoelectric conversion film 3. Figure 11 Between the second electrode 2-1 (lower side) and the insulating layer 10-1 below the second electrode 2-1, the insulating film 511a covers the outer periphery of the conductive portion 12-11 (through electrode) constituting the first electrode 7000. Specifically, relative to the center reference in the left-right direction of this figure... Figure 11 The connecting hole 7000-1 has a photoelectric conversion film 3, a second electrode 2-1, an insulating layer 10-1, an insulating film 511a-1 (511a), and a conductive part 12-11 formed sequentially on the left side, and a photoelectric conversion film 3, a second electrode 2-1, an insulating layer 10-1, an insulating film 511a-2 (511a), and a conductive part 12-11 formed sequentially on the right side. When from... Figure 11When viewed from above and below, the insulating film 511a extends from the top of the photoelectric conversion film 3. Figure 11 (on the upper side) extends to the through hole 131 formed in the insulating layer 10-1.

[0211] In the connection holes 1214-11, an insulating film 511b having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the first photoelectric conversion unit 1100-1, such that the insulating film 511b covers the outer periphery of the conductive part 12 (through electrode). Specifically, relative to the center reference in the left-right direction of this figure... Figure 11 The connection hole 1214-11 has a first photoelectric conversion unit 1100-1, an insulating film 511b-1 (511b), and a conductive part 12 formed sequentially on the left side, and a first photoelectric conversion unit 1100-1, an insulating film 511b-2 (511b), and a conductive part 12 formed sequentially on the right side. When from... Figure 11 When viewed from above and below, the insulating film 511b extends from the through hole 131 formed in the insulating layer 10-2 to the through hole 13 formed in the insulating layer 11.

[0212] When the signal charge to be read is an electron, the insulating film 511a is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 511a is an insulating film with a positive fixed charge. Because the insulating film 511a is present in the solid-state imaging device 1100, the signal charge converted by the photoelectric conversion film 3 is not captured by the conductive part 12-11 (through electrode), but is accumulated in the transport layer 4-1 below the charge accumulation electrode 1-10.

[0213] When the insulating film 511a is an insulating film with a negative fixed charge, the insulating film 511a may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 511a may also contain an insulating material such as a silicon oxide film, or the insulating film 511a may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0214] When the insulating film 511a is an insulating film with a positive fixed charge, the insulating film 511a may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 511a may also contain an insulating material such as a silicon oxide film, or the insulating film 511a may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0215] When the signal charge to be read is an electron, the insulating film 511b is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 511b is an insulating film with a positive fixed charge. Because the insulating film 511b exists in the solid-state imaging device 1100, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0216] When the insulating film 511b is an insulating film with a negative fixed charge, the insulating film 511b may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 511b may also contain an insulating material such as a silicon oxide film, or the insulating film 511b may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0217] When the insulating film 511b is an insulating film with a positive fixed charge, the insulating film 511b may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 511b may also contain an insulating material such as a silicon oxide film, or the insulating film 511b may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0218] Figure 12 This describes a method for manufacturing a solid-state imaging device 1200 according to a third embodiment of the present invention.

[0219] Figure 12 The device 1200a shown in (a) includes Figure 11 The second photoelectric conversion unit 1100-2 shown is Figure 11 The portion above line P11 shown constitutes a semi-finished product, for example, a solid-state imaging device 1200 in a wafer state.

[0220] Figure 12 The device 1200b shown in (b) includes a first photoelectric conversion unit 1100-1 and a semiconductor substrate 30. Figure 11 The portion below line P11 shown constitutes a semi-finished product, for example, a solid-state imaging device 1200 in a wafer state.

[0221] like Figure 12 As indicated by arrow R12, the solid-state imaging device 1200 is manufactured by flipping device 1200a and then bonding device 1200a to device 1200b. An advantage of this process is that high-temperature heat treatment can be used during the formation of the transport layer. Typically, the photoelectric conversion film is more susceptible to thermal effects than the transport layer. If the photoelectric conversion film and the transport layer are formed sequentially from the bottom, it is difficult to heat the transport layer 4 of the second photoelectric conversion unit (upper layer) at high temperatures. When this occurs, the characteristics may deteriorate. To avoid this problem, the photoelectric conversion film and the transport layer are stacked separately and then bonded together. In this case, the first electrode 7000 still passes through the photoelectric conversion film 3 of the second photoelectric conversion unit (upper layer). Therefore, an insulating film 511a with a fixed charge is provided.

[0222] The details described above relating to the solid-state imaging device of the third embodiment of the present invention (Example 3 of the solid-state imaging device) can be applied to the solid-state imaging devices of the first and second embodiments of the present invention described above and the solid-state imaging devices of the fourth to sixth embodiments of the present invention described below, as long as no technical contradiction is caused.

[0223] <5. Fourth Embodiment (Example 4 of Solid-State Imaging Devices)>

[0224] Reference Figure 13 and Figure 14 The solid-state imaging device of the fourth embodiment of the present invention is described (Example 4 of solid-state imaging device).

[0225] First, refer to Figure 13 Please provide an explanation. Figure 13 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1300) according to a fourth embodiment of the present invention.

[0226] Solid-state imaging device 1300 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1300-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 13 The first photoelectric conversion unit 1300-1 is located above the first photoelectric conversion unit 1300-1 (on the upper side) and converts light into charge; the second photoelectric conversion unit 1300-2 is located above the first photoelectric conversion unit 1300-1 (on the light incident side and the upper side). Figure 13 (on the upper side) and converts light into electric charge.

[0227] The first photoelectric conversion unit 1300-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 13 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 13 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0228] The second photoelectric conversion unit 1300-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 13 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 13 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0229] In the first photoelectric conversion unit 1300-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 1300-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite the photoelectric conversion film 3 (transport layer 4).

[0230] The first electrode 8 of the first photoelectric conversion unit 1300-1 and the first electrode 7 of the second photoelectric conversion unit 1300-2 are electrically connected to the charge accumulation unit 44 formed in the semiconductor substrate 30 via a conductive portion 12 passing through the second electrode 2-2 of the first photoelectric conversion unit 1300-1, the photoelectric conversion film 5, and the insulating layer 11. Specifically, the solid-state imaging device 1300 has connection holes 120-13 passing through the insulating layer 10 included in the second photoelectric conversion unit 1300-2 and the second electrode 2-2 and the photoelectric conversion film 5 included in the first photoelectric conversion unit 1300-1, and connection holes 160-13 passing through the insulating layer 11 included in the first photoelectric conversion unit 1300-1 and the semiconductor substrate 30, so as to electrically connect the first electrode 7 of the second photoelectric conversion unit 1300-2 and the first electrode 8 of the first photoelectric conversion unit 1300-1 to the charge accumulation unit 44 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 is formed in the connection hole 120-13. A conductive portion (through electrode) 16 is formed in the connection hole 160-13. Furthermore, the first electrode 7 is connected to the charge accumulation unit 44 via the conductive portion (through electrode) 12 and the conductive portion (through electrode) 16, and also via the transport layer 6 included in the first photoelectric conversion unit 1300-1 and the first electrode 8 connected to the transport layer 6. For example, by providing a charge accumulation unit 44 shared by the first electrode 7 and the first electrode 8, the size of the charge accumulation electrode 1-2 can be increased. Therefore, sensitivity and saturation charge can be improved.

[0231] The first electrode 8 is connected to the charge accumulation unit 44 via the conductive portion (through electrode) 16. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42.

[0232] In the connection hole 120-13, an insulating film 513 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 44 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, and the photoelectric conversion film 5 below the second electrode 2-2, such that the insulating film 513 covers the outer periphery of the conductive part 12 (through electrode). Specifically, relative to the center reference in the left-right direction of this figure... Figure 13 The connecting hole 120-13 in the middle has an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, an insulating film 513-1 (513), and a conductive part 12 formed sequentially on the left side, and an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, an insulating film 513-2 (513), and a conductive part 12 formed sequentially on the right side. When from Figure 13 When viewed from above and below, the insulating film 513 extends from the first electrode 7 formed in the insulating layer 10 to the upper part of the transport layer 6 (corresponding to...). Figure 13 (On the upper side of the middle, corresponding to the boundary between the transmission layer 6 and the photoelectric conversion film 5).

[0233] When the signal charge to be read is an electron, the insulating film 513 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 513 is an insulating film with a positive fixed charge. Because the insulating film 513 is present in the solid-state imaging device 1300, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0234] When the insulating film 513 is an insulating film with a negative fixed charge, the insulating film 513 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 513 may also contain an insulating material such as a silicon oxide film, or the insulating film 513 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0235] When the insulating film 513 is an insulating film with a positive fixed charge, the insulating film 513 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 513 may also contain an insulating material such as a silicon oxide film, or the insulating film 513 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0236] The following will refer to Figure 14 Please provide an explanation. Figure 14 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1400) according to a fourth embodiment of the present invention.

[0237] Solid-state imaging device 1400 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1400-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 14 The first photoelectric conversion unit 1400-1 is located above the first photoelectric conversion unit 1400-1 (on the upper side of the light source) and converts light into charge; the second photoelectric conversion unit 1400-2 is located above the first photoelectric conversion unit 1400-1 (on the light incident side and the upper side of the light source). Figure 14 (on the upper side) and converts light into electric charge.

[0238] The first photoelectric conversion unit 1400-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 14 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 14 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0239] The second photoelectric conversion unit 1400-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 14 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 14 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0240] In the first photoelectric conversion unit 1400-1, the transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is separated from the transport layer 6 and opposite to the photoelectric conversion film 5 (transport layer 6). Meanwhile, in the second photoelectric conversion unit 1400-2, the transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is separated from the transport layer 4 and opposite to the photoelectric conversion film 3 (transport layer 4).

[0241] The first electrode 8 of the first photoelectric conversion unit 1400-1 and the first electrode 7 of the second photoelectric conversion unit 1400-2 are electrically connected to the charge accumulation unit 44 formed in the semiconductor substrate 30 via a conductive portion 12 passing through the first photoelectric conversion unit 1400-1. Specifically, the solid-state imaging device 1400 has connection holes 120-14 passing through the insulating layer 10 included in the second photoelectric conversion unit 1400-2 and the second electrode 2-2, photoelectric conversion film 5, and transport layer 6 included in the first photoelectric conversion unit 1400-1, and connection holes 160-14 passing through the insulating layer 11 included in the first photoelectric conversion unit 1400-1 and the semiconductor substrate 30, so as to electrically connect the first electrode 7 of the second photoelectric conversion unit 1400-2 and the first electrode 8 of the first photoelectric conversion unit 1400-1 to the charge accumulation unit 44 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 is formed in the connection hole 120-14. A conductive portion (through electrode) 16 is formed in the connection hole 160-14. Furthermore, the first electrode 7 is connected to the charge accumulation unit 44 via the conductive portion (through electrode) 12 and the conductive portion (through electrode) 16, and also via the first electrode 8 connected to the transport layer 6 included in the first photoelectric conversion unit 1400-1. For example, by providing a charge accumulation unit 44 shared by the first electrode 7 and the first electrode 8, the size of the charge accumulation electrodes 1-2 can be increased. Therefore, sensitivity and saturation charge amount can be improved. Figure 13In this configuration, the conductive portion 12 (through electrode) is in contact with the transport layer 6. However, more preferably, as... Figure 14 As shown, the conductive part 12 (through electrode) passes through the transmission layer 6 and contacts the first electrode 8 (signal readout electrode).

[0242] The first electrode 8 is connected to the charge accumulation unit 44 via the conductive portion (through electrode) 16. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42.

[0243] In the connection hole 120-14, an insulating film 514 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 44 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, and the photoelectric conversion film 5 below the second electrode 2-2, such that the insulating film 514 covers the outer periphery of the conductive part 12 (through electrode). Specifically, relative to the center reference in the left-right direction of this figure... Figure 14 The connecting hole 120-14 in the middle has an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, an insulating film 514-1 (514), and a conductive part 12 formed sequentially on the left side, and an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, an insulating film 514-2 (514), and a conductive part 12 formed sequentially on the right side. When from Figure 14 When viewed from above and below, the insulating film 514 extends from the first electrode 7 formed in the insulating layer 10 to the upper part of the transport layer 6 (corresponding to...). Figure 14 (On the upper side of the middle, corresponding to the boundary between the transmission layer 6 and the photoelectric conversion film 5).

[0244] When the signal charge to be read is an electron, the insulating film 514 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 514 is an insulating film with a positive fixed charge. Because the insulating film 514 is present in the solid-state imaging device 1400, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0245] When the insulating film 514 is an insulating film with a negative fixed charge, the insulating film 514 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 514 may also contain an insulating material such as a silicon oxide film, or the insulating film 514 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0246] When the insulating film 514 is an insulating film with a positive fixed charge, the insulating film 514 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 514 may also contain an insulating material such as a silicon oxide film, or the insulating film 514 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0247] The details described above relating to the solid-state imaging device of the fourth embodiment of the present invention (Example 4 of the solid-state imaging device) can be applied to the solid-state imaging devices of the first to third embodiments of the present invention described above and the solid-state imaging devices of the fifth and sixth embodiments of the present invention described below, as long as no technical contradiction is caused.

[0248] <6. Fifth Embodiment (Example 5 of Solid-State Imaging Devices)>

[0249] Reference Figure 15 The solid-state imaging device of the fifth embodiment of the present invention is described (Example 5 of the solid-state imaging device).

[0250] This will present a reference. Figure 15 Explanation of the procedure. Figure 15 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1500) according to a fifth embodiment of the present invention.

[0251] Solid-state imaging device 1500 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1500-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 15 The upper side of the first photoelectric conversion unit 1500-1 converts light into charge; the second photoelectric conversion unit 1500-2 is disposed above the first photoelectric conversion unit 1500-1 (on the light incident side and the upper side of the first photoelectric conversion unit 1500-1). Figure 15 The upper side of the second photoelectric conversion unit 1500-2 converts light into charge; and the third photoelectric conversion unit 1500-3 is disposed above the second photoelectric conversion unit 1500-2 (on the light incident side and the upper side of the second photoelectric conversion unit 1500-2). Figure 15(on the upper side) and converts light into electric charge.

[0252] The first photoelectric conversion unit 1500-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 15 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 15 The photoelectric conversion film 5 is disposed between the first electrode (reading electrode) 8 and the second electrode 2-2. As described above, the photoelectric conversion film 5 is, for example, a photoelectric conversion film that absorbs red light (e.g., light with a wavelength range of 620 nm to 750 nm).

[0253] The second photoelectric conversion unit 1500-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 15 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 15 The photoelectric conversion film 3 is disposed between the first electrode (reading electrode) 7 and the second electrode 2-1. As described above, the photoelectric conversion film 3 is, for example, a photoelectric conversion film that absorbs green light (e.g., light with a wavelength range of 495 nm to 570 nm).

[0254] The third photoelectric conversion unit 1500-3 includes: a first electrode 78 (corresponding to the readout electrode and...) Figure 15 The lower electrode); the second electrode 2-3 (corresponding to the lower electrode); Figure 15 The photoelectric conversion film 35 is disposed between the first electrode (reading electrode) 7 and the second electrode 2-3. The photoelectric conversion film 35 is, for example, a photoelectric conversion film that absorbs blue light (e.g., light with a wavelength range of 425 nm to 495 nm).

[0255] In the first photoelectric conversion unit 1500-1, a transport layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and the charge accumulation electrode 1-2 is arranged separately from the first electrode 8 and located in the insulating layer 11, which is below the transport layer 6, opposite to the photoelectric conversion film 5 (transport layer 6). Furthermore, in the second photoelectric conversion unit 1500-2, a transport layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and the charge accumulation electrode 1-1 is arranged separately from the first electrode 7 and located in the insulating layer 10, which is below the transport layer 4, opposite to the photoelectric conversion film 3 (transport layer 4). Furthermore, in the third photoelectric conversion unit 1500-3, a transport layer 46 is disposed between the first electrode 78 and the photoelectric conversion film 35, and the charge accumulation electrode 1-3 is arranged separately from the first electrode 78 and located in the insulating layer 10-3, which is below the transport layer 46, opposite to the photoelectric conversion film 35 (transport layer 46).

[0256] The first electrode 78 of the third photoelectric conversion unit 1500-3 and the charge accumulation unit 45 formed in the semiconductor substrate 30 are electrically connected to each other via conductive portions 12-15 passing through the second photoelectric conversion unit 1500-2 and the first photoelectric conversion unit 1500-1. Specifically, the solid-state imaging device 1500 has a connection hole 1214-15-2 passing through the insulating layer 10-3, the second photoelectric conversion unit 1500-2, the first photoelectric conversion unit 1500-1, and the semiconductor substrate 30 to electrically connect the first electrode 78 of the third photoelectric conversion unit 1500-3 and the charge accumulation unit 45 formed in the semiconductor substrate 30. Conductive portions (through electrodes) 12-15 and conductive portions (through electrodes) 140 are formed in the connection hole 1214-15-2. The conductive portions (through electrodes) 12-15 connected to the first electrode 78 and the conductive portions (through electrodes) 140 connected to the charge accumulation unit 45 are connected to each other via through holes 130 formed in the insulating layer 11.

[0257] The first electrode 7 of the second photoelectric conversion unit 1500-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion 12 passing through the first photoelectric conversion unit 1500-1. Specifically, the solid-state imaging device 1500 has a connection hole 1214-15-1 passing through the insulating layer 10, the first photoelectric conversion unit 1500-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 1500-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-15-1. The conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13 formed in the insulating layer 11. Furthermore, the solid-state imaging device 1500 has a connection hole 150-15 passing through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 1500-1 to the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-10.

[0258] In the connection hole 1214-15-2, an insulating film 515a having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 45 is formed between the conductive part 12-15 (through electrode) and the insulating layer 10-3, the second photoelectric conversion unit 1500-2 below the insulating layer 10-3, the second electrode 2-2 below the second photoelectric conversion unit 1500-2, the photoelectric conversion film 5 below the second electrode 2-2, the transport layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transport layer 6, such that the insulating film 515a covers the outer periphery of the conductive part 12-15 (through electrode). Specifically, relative to Figure 15 The connecting hole 1214-15-2, which serves as the central reference in the left-right direction of this figure, has the following components formed sequentially on the left side: an insulating layer 10-3, a second photoelectric conversion unit 1500-2 below the insulating layer 10-3, a second electrode 2-2 below the second photoelectric conversion unit 1500-2, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 515a-1 (515a), and a conductive part 12-15. On the right side, the following components are formed sequentially: an insulating layer 10-3, a second photoelectric conversion unit 1500-2 below the insulating layer 10-3, a second electrode 2-2 below the second photoelectric conversion unit 1500-2, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 515a-2 (515a), and a conductive part 12-15. When from... Figure 15 When viewed from above, the insulating film 515a extends from the first electrode 78 formed in the insulating layer 10-3 included in the third photoelectric conversion unit 1500-3 to the through hole 130 formed in the insulating layer 11 included in the first photoelectric conversion unit 1500-1.

[0259] In the connection hole 1214-15-1, an insulating film 515b having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transmission layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transmission layer 6, such that the insulating film 515b covers the outer periphery of the conductive part 12 (through electrode). Specifically, relative to the center reference in the left-right direction of this figure... Figure 15The connection hole 1214-15-1 in the middle has an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transmission layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transmission layer 6, an insulating film 515b-1 (515b), and a conductive part 12 formed sequentially on the left side. On the right side, the same structure is formed sequentially. Figure 15 When viewed from above, the insulating film 515b extends from the first electrode 7 formed in the insulating layer 10 included in the second photoelectric conversion unit 1500-2 to the through hole 13 formed in the insulating layer 11 included in the first photoelectric conversion unit 1500-1.

[0260] When the signal charge to be read is an electron, the insulating film 515a is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 515a is an insulating film with a positive fixed charge. Because the insulating film 515a is present in the solid-state imaging device 1500, the signal charge converted by the photoelectric conversion film 3 is not captured by the conductive parts 12-15 (through electrodes), but is accumulated in the transport layer 4 above the accumulation electrode 1-1. Furthermore, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive parts 12-15 (through electrodes), but is accumulated in the transport layer 6 above the charge accumulation electrode 1-2.

[0261] When the insulating film 515a is an insulating film with a negative fixed charge, the insulating film 515a may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 515a may also contain an insulating material such as a silicon oxide film, or the insulating film 515a may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0262] When the insulating film 515a is an insulating film with a positive fixed charge, the insulating film 515a may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 515a may also contain an insulating material such as a silicon oxide film, or the insulating film 515a may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0263] When the signal charge to be read is an electron, the insulating film 515b is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 515b is an insulating film with a positive fixed charge. Because the insulating film 515b exists in the solid-state imaging device 1500, the signal charge converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode), but is accumulated in the transport layer 6 above the charge accumulation electrodes 1-2.

[0264] When the insulating film 515b is an insulating film with a negative fixed charge, the insulating film 515b contains at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 515b may also contain an insulating material such as a silicon oxide film, or the insulating film 515b may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0265] When the insulating film 515b is an insulating film with a positive fixed charge, the insulating film 515b may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 515b may also contain an insulating material such as a silicon oxide film, or the insulating film 515b may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0266] The details described above relating to the solid-state imaging device of the fifth embodiment of the present invention (Example 5 of the solid-state imaging device) can be applied to the solid-state imaging devices of the first to fourth embodiments of the present invention described above and the solid-state imaging device of the sixth embodiment of the present invention described below, as long as no technical contradiction is caused.

[0267] <7. Sixth Embodiment (Example 6 of Solid-State Imaging Devices)>

[0268] Reference Figure 16 , 17 Sections 1 and 19 illustrate a solid-state imaging device according to a sixth embodiment of the present invention (Example 6 of a solid-state imaging device).

[0269] First, refer to Figure 16 Please provide an explanation. Figure 16 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1600) according to a sixth embodiment of the present invention.

[0270] Solid-state imaging device 1600 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1600-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 16 The first photoelectric conversion unit 1600-1 is located above the first photoelectric conversion unit 1600-1 (on the upper side) and converts light into charge; the second photoelectric conversion unit 1600-2 is located above the first photoelectric conversion unit 1600-1 (on the light incident side and the upper side). Figure 16 (on the upper side) and converts light into electric charge.

[0271] The first photoelectric conversion unit 1600-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 16 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 16 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0272] The second photoelectric conversion unit 1600-2 includes: a first electrode 7 (corresponding to the readout electrode and...) Figure 16 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 16 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0273] The first electrode 7 of the second photoelectric conversion unit 1600-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion 12 passing through the first photoelectric conversion unit 1600-1. Specifically, the solid-state imaging device 1600 has connection holes 1214-16 passing through the insulating layer 10, the first photoelectric conversion unit 1600-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 1600-2 to the charge accumulation unit 41 formed in the semiconductor substrate 30. Conductive portions (through electrodes) 12 and 14 are formed in the connection holes 1214-16. The conductive portions (through electrodes) 12 connected to the first electrode 7 and the conductive portions (through electrodes) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13 formed in the insulating layer 11. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, connection holes 150-16 are formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 1600-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection holes 150-16.

[0274] In the connecting holes 1214-16, an insulating film 516 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive portion 12 (through electrode) and the photoelectric conversion film 5, such that the insulating film 516 covers the outer periphery of the conductive portion 12 (through electrode). Specifically, relative to the center reference in the left-right direction of this figure... Figure 16 The connecting holes 1214-16 in the middle have a photoelectric conversion film 5, an insulating film 516-1 (516) and a conductive part 12 formed sequentially on the left side, and a photoelectric conversion film 5, an insulating film 516-2 (516) and a conductive part 12 formed sequentially on the right side. When from Figure 16 When viewed from above and below, the insulating film 516 extends from the top of the photoelectric conversion film 5. Figure 16 The upper part of the middle) extends to the lower part of the photoelectric conversion film 5. Figure 16 (the lower side of the film), that is, extending along the entire side of the photoelectric conversion film 5.

[0275] Figure 16The solid-state imaging device 1600 does not accumulate charge in the first electrode (signal readout electrode) and the photoelectric conversion film, but rather in charge accumulation cells (FDs) formed in the semiconductor substrate 30. The conductive portion (through electrode) included in the solid-state imaging device 1600, which is required to read the signal from the second photoelectric conversion unit (upper layer), also prevents modulation of the potential of the photoelectric conversion film of the first photoelectric conversion unit (lower layer) and characteristic degradation caused by modulation. Therefore, it is effective to introduce fixed charge into the insulating film covering the through electrode. Note that in a structure where signal charge is accumulated in the charge accumulation cells (FDs), pixel sharing is generally difficult.

[0276] When the signal charge to be read is an electron, the insulating film 516 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 516 is an insulating film with a positive fixed charge. Because the insulating film 516 is present in the solid-state imaging device 1600, the signal charge photoelectrically converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode).

[0277] When the insulating film 516 is an insulating film with a negative fixed charge, the insulating film 516 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 516 may also contain an insulating material such as a silicon oxide film, or the insulating film 516 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0278] When the insulating film 516 is an insulating film with a positive fixed charge, the insulating film 516 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 516 may also contain an insulating material such as a silicon oxide film, or the insulating film 516 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0279] Next, we will refer to Figure 17 Please provide an explanation. Figure 17 This is a cross-sectional view illustrating a construction example of a solid-state imaging device (solid-state imaging device 1700) according to a sixth embodiment of the present invention.

[0280] Solid-state imaging device 1700 includes: a semiconductor substrate 30; and a first photoelectric conversion unit 1700-1, disposed above the semiconductor substrate 30 (on the light incident side and...). Figure 17 The first photoelectric conversion unit 1700-1 is located above the first photoelectric conversion unit 1700-1 (on the upper side) and converts light into charge; the second photoelectric conversion unit 1700-2 is located above the first photoelectric conversion unit 1700-1 (on the light incident side and the upper side). Figure 17 (on the upper side) and converts light into electric charge.

[0281] The first photoelectric conversion unit 1700-1 includes: a first electrode 8 (corresponding to the reading electrode and...) Figure 17 The lower electrode in the middle); the second electrode 2-2 (corresponding to the lower electrode in the middle); Figure 17 The upper electrode in the middle; and the photoelectric conversion film 5 disposed between the first electrode (reading electrode) 8 and the second electrode 2-2.

[0282] The second photoelectric conversion unit 1700-2 includes: a first electrode 7 (corresponding to the reading electrode and...) Figure 17 The lower electrode in the middle); the second electrode 2-1 (corresponding to the lower electrode in the middle); Figure 17 The upper electrode in the middle; and the photoelectric conversion film 3 disposed between the first electrode (reading electrode) 7 and the second electrode 2-1.

[0283] The first electrode 7 of the second photoelectric conversion unit 1700-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected to each other via a conductive portion 12 passing through the first photoelectric conversion unit 1700-1. Specifically, the solid-state imaging device 1700 has connection holes 1214-17 passing through the insulating layer 10, the first photoelectric conversion unit 1700-1, and the semiconductor substrate 30 to electrically connect the first electrode 7 of the second photoelectric conversion unit 1700-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30. Conductive portions (through electrodes) 12 and 14 are formed in the connection holes 1214-17. The conductive portions (through electrodes) 12 connected to the first electrode 7 and the conductive portions (through electrodes) 14 connected to the charge accumulation unit 41 are connected to each other via a through hole 13 formed in the insulating layer 11. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Furthermore, connection holes 150-17 are formed through the insulating layer 11 and the semiconductor substrate 30 to electrically connect the first electrode 8 of the first photoelectric conversion unit 1700-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30. Specifically, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection holes 150-17.

[0284] In the connection holes 1214-17, an insulating film 517 having a fixed charge of the same type as the charge accumulated in the charge accumulation unit 41 is formed between the conductive part 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, and the insulating layer 11 below the photoelectric conversion film 5, such that the insulating film 517 covers the outer periphery of the conductive part 12 (through electrode). Specifically, relative to Figure 17 The connecting hole 1214-17 serves as the center reference in the left-right direction of this figure. On the left side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, an insulating layer 11 below the photoelectric conversion film 5, an insulating film 517-1 (517), and a conductive portion 12 are formed sequentially. On the right side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, an insulating layer 11 below the photoelectric conversion film 5, an insulating film 517-2 (517), and a conductive portion 12 are formed sequentially. When from... Figure 17 When viewed from above and below, the insulating film 517 extends from the first electrode 7 formed in the insulating layer 10 to the through hole 13 formed in the insulating layer 11.

[0285] When the signal charge to be read is an electron, the insulating film 517 is an insulating film with a negative fixed charge. When the signal charge to be read is a hole, the insulating film 517 is an insulating film with a positive fixed charge. Because the insulating film 517 is present in the solid-state imaging device 1700, the signal charge photoelectrically converted by the photoelectric conversion film 5 is not captured by the conductive part 12 (through electrode).

[0286] When the insulating film 517 is an insulating film with a negative fixed charge, the insulating film 517 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, in addition to the above-mentioned materials, the insulating film 517 may also contain an insulating material such as a silicon oxide film, or the insulating film 517 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the above-mentioned materials.

[0287] When the insulating film 517 is an insulating film with a positive fixed charge, the insulating film 517 may, for example, contain at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, in addition to the materials described above, the insulating film 517 may also contain an insulating material such as a silicon oxide film, or the insulating film 517 may additionally include an insulating material such as a silicon oxide film as a film (layer) different from the film (layer) containing any of the materials described above.

[0288] Finally, refer to Figure 19 Please provide an explanation. Figure 19 The illustration shows an example of a comparison between an insulating film with a fixed charge and an insulating film without a fixed charge. More specifically, Figure 19 (a) illustrates an insulating film 5019 formed to cover the outer periphery of the conductive portion 12 but without a fixed charge. Figure 19 The left portion of (a) illustrates insulating film 5019-1, while Figure 19 The right side of (a) illustrates the insulating film 5019-2. Figure 19 (b) illustrates a structure formed to cover the outer periphery of the conductive portion 12 and having a fixed charge. Figure 19 (b) is an insulating film with a negative fixed charge m) 519 ( Figure 19 The left portion of (b) illustrates insulating film 519-1, while Figure 19 The right side of (b) illustrates the insulating film 519-2.

[0289] like Figure 19 As shown in (a), the signal charge generated by photoelectric conversion using the photoelectric conversion film 5 (in) Figure 19 In case (a), electrons are captured by the conductive part 12 (through electrode) as indicated by arrow S19a. In this case, the aperture ratio of the photoelectric conversion film 5 decreases, and the afterimage and random noise become worse.

[0290] like Figure 19 As shown in (b), the signal charge generated by photoelectric conversion using the photoelectric conversion film 5 (in) Figure 19 In case (b), electrons are not captured by the conductive part 12 (through electrode) as indicated by arrow S19b. In this case, the aperture ratio of the photoelectric conversion film 5 does not decrease, and the afterimage and random noise do not worsen. Therefore, the dark current is improved. Furthermore, a reference is no longer needed. Figure 5 The aforementioned shielding electrode. Furthermore, for example, eliminating the need for the shielding electrode makes it possible to increase the number of electrons in the photodiode (PD).

[0291] The details described above relating to the solid-state imaging device of the sixth embodiment of the present invention (Example 6 of the solid-state imaging device) can be applied to the solid-state imaging devices of the first to fifth embodiments of the present invention described above, as long as they do not create a technical contradiction.

[0292] <8. Seventh Embodiment (Example of an Electronic Device)>

[0293] The electronic device of the seventh embodiment of the present invention is an electronic device equipped with a solid-state imaging device of any one of the first to sixth embodiments of the present invention.

[0294] <9. Examples of use of the solid-state imaging device of the present invention>

[0295] Figure 21 Examples of the solid-state imaging device according to the first to sixth embodiments of the present invention are illustrated as an image sensor (solid-state imaging device).

[0296] For example, the solid-state imaging devices of the first to sixth embodiments described above can be used in various situations, such as for sensing visible light, infrared light, ultraviolet light, X-rays, or other light, as described below. Specifically, as... Figure 21 As shown, for example, the solid-state imaging device of any of the first to sixth embodiments can be used as an apparatus in the following fields: viewing field, wherein images are captured for viewing; transportation field; home appliance field; medical and health care field; security field; beauty field; sports field; agriculture field; or other fields (e.g., the electronic device of the seventh embodiment described above).

[0297] Specifically, in the field of viewing, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to devices for capturing images for viewing, such as digital cameras, smartphones, and mobile phones with camera functions.

[0298] In the field of transportation, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to transportation devices to achieve safe driving such as automatic parking, driver status recognition or other purposes, such as: vehicle-mounted sensors that take pictures of the front, rear, surrounding environment or inside the vehicle; surveillance cameras that monitor vehicles and roads in motion; and distance measurement sensors that measure the distance between vehicles.

[0299] In the field of home appliances, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to devices used in home appliances to image user gestures and operate the device according to the gestures, such as television receivers, refrigerators and air conditioners.

[0300] In the medical and healthcare fields, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to devices for medical and healthcare purposes, such as endoscopes and devices for angiography by receiving infrared light.

[0301] In the security field, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to devices for security purposes, such as surveillance cameras for crime prevention and cameras for personal identification.

[0302] In the field of beauty, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to devices for beauty purposes, such as skin measurement devices for imaging the skin and microscopes for imaging the scalp.

[0303] In the field of sports, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to sports-related devices, such as action cameras or wearable cameras for sports.

[0304] In the agricultural field, for example, the solid-state imaging device of any of the first to sixth embodiments can be applied to devices for agricultural use, such as cameras for monitoring the condition of fields or crops.

[0305] Next, specific examples of the use of the solid-state imaging device according to the first to sixth embodiments of the present invention will be described. For example, the solid-state imaging device of any of the first to sixth embodiments described above can be used. Specifically, for example, the solid-state imaging device 101 including the solid-state imaging device can be applied to camera systems such as digital cameras and camcorders, mobile phones with imaging functions, or other various types of electronic devices with imaging functions. Figure 22 The schematic configuration of electronic device 102 (camera) is illustrated as an example of an electronic device that uses solid-state imaging device 101. For example, electronic device 102 is a camera capable of capturing still or moving images, and includes: solid-state imaging device 101, optical system (optical lens) 310, shutter device 311, drive unit 313 for driving solid-state imaging device 101 and shutter device 311, and signal processing unit 312.

[0306] The optical system 310 guides the image light (incident light) from the subject to the pixel unit 101a of the solid-state imaging device 101. The optical system 310 may include multiple optical lenses. The shutter device 311 controls the illumination period and the light blocking period of the solid-state imaging device 101. The drive unit 313 controls the transmission operation of the solid-state imaging device 101 and the shutter operation of the shutter device 311. The signal processing unit 312 performs various signal processing on the signal output from the solid-state imaging device 101. The image signal Dout obtained through signal processing is stored in a storage medium such as a memory, or output to a monitor, etc.

[0307] <10. Examples of the Application of Endoscopic Surgical Systems>

[0308] This invention can be applied to a variety of products. For example, the technology of this invention (the technology) can be applied to endoscopic surgical systems.

[0309] Figure 23 The illustration shows a schematic example of an endoscopic surgical system in which the technology (the technology) of the present invention can be applied.

[0310] exist Figure 23 The illustration shows a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown, the endoscopic surgical system 11000 includes an endoscope 11100, other surgical instruments 11110 (such as a pneumoperitoneum tube 11111 and an energy device 11112), a support arm assembly 11120 supporting the endoscope 11100, and a trolley 11200 on which various devices for endoscopic surgery are mounted.

[0311] Endoscope 11100 includes: a tube 11101 inserted into a body cavity of patient 11132 at a predetermined length from its distal end; and a camera head 11102 connected to the proximal end of the tube 11101. In the illustrated example, endoscope 11100 is shown as a rigid endoscope including a rigid tube 11101. However, endoscope 11100 can also be a flexible endoscope having a flexible tube 11101.

[0312] The distal end of the endoscope tube 11101 has an opening for mounting an objective lens. A light source device 11203 is connected to the endoscope 11100 such that light generated by the light source device 11203 is guided by light extending within the endoscope tube 11101 to the distal end of the endoscope tube 11101 and illuminates the target for observation within the body cavity of the patient 11132 via the objective lens. Note that the endoscope 11100 can be a direct-viewing endoscope, or it can be an oblique-viewing endoscope or a lateral-viewing endoscope.

[0313] An optical system and an image sensor are housed within the camera head 11102, such that the optical system collects reflected light (observation light) from the observed target onto the image sensor. The image sensor performs photoelectric conversion on the observation light to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0314] The CCU11201 includes a CPU (Central Processing Unit) or GPU (Graphics Processing Unit), and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU11201 receives image signals from the camera head 11102 and performs various image processing on the image signals to display images based on them, such as image development processing (de-mosaic processing).

[0315] The display device 11202 displays an image based on the image signal that has been image-processed by the CCU11201 under the control of the CCU11201.

[0316] The light source device 11203 includes a light source such as an LED (light-emitting diode) and provides illumination light for imaging the surgical site to the endoscope 11100.

[0317] Input device 11204 is the input interface of endoscopic surgery system 11000. Users can input various information or commands into endoscopic surgery system 11000 through input device 11204. For example, users can input commands to change the imaging conditions of endoscope 11100 (type of illumination light, magnification or focal length, etc.).

[0318] The treatment tool control device 11205 controls the drive of the energy device 11112 to cauterize or cut tissue, suture blood vessels, etc. The pneumoperitoneum device 11206 feeds gas into the patient's body cavity 11132 through the pneumoperitoneum tube 11111 to inflate the cavity, ensuring the endoscope 11100's field of vision and ensuring the surgeon's working space. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphics.

[0319] Note that the light source device 11203 that provides illumination to the endoscope 11100 when photographing the surgical site may include a white light source, such as an LED, a laser light source, or a combination thereof. When the white light source includes a combination of RGB (red, green, and blue) laser light sources, the light source device 11203 can adjust the white balance of the captured image because the output intensity and timing of each color (wavelength) can be controlled with high precision. Furthermore, in this case, if the laser beams from each RGB laser light source are used to illuminate the target in a time-division manner, and the driving of the imaging element of the camera head 11102 is controlled synchronously with the illumination timing, images corresponding to the R, G, and B colors respectively can also be captured in a time-division manner. According to this method, color images can be obtained even without a color filter in the imaging element.

[0320] Furthermore, the light source device 11203 can be controlled to change the intensity of the output light at predetermined intervals. By controlling the driving of the imaging element of the camera head 11102 in sync with the timing of the change in light intensity, an image is acquired in a time-division manner, and by synthesizing the acquired image, a high dynamic range image can be generated that does not have underexposed shadows or overexposed highlights.

[0321] Furthermore, the light source device 11203 can be configured to provide light of a predetermined wavelength suitable for special light observation. In special light observation, for example, narrow-band imaging (narrow-band imaging) is performed to image predetermined tissues, such as blood vessels in the mucosal surface, with high contrast by irradiating a narrow-band light compared to the illumination light used in conventional observation (i.e., white light) using the wavelength dependence of light absorption in body tissue. Alternatively, in special light observation, fluorescence observation can be performed to obtain an image by irradiating fluorescence generated by excitation light. In fluorescence observation, fluorescence from body tissue can be observed by irradiating body tissue with excitation light (autofluorescence observation), or a fluorescence image can be obtained by locally injecting a reagent such as indocyanine green (ICG) into body tissue and irradiating the body tissue with excitation light corresponding to the fluorescence wavelength of the reagent. The light source device 11203 can be configured to provide narrow-band light and / or excitation light suitable for special light observation as described above.

[0322] Figure 24 It's a diagram. Figure 23 A block diagram illustrating an example of the functional configuration of the camera head 11102 and CCU11201.

[0323] The camera head 11102 includes a lens unit 11401, an image capturing unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are communicatively connected to each other via a transmission cable 11400.

[0324] Lens unit 11401 is an optical system disposed at the connection portion with lens barrel 11101. Observation light collected from the distal end of lens barrel 11101 is guided to camera head 11102 and introduced into lens unit 11401. Lens unit 11401 includes a combination of multiple lenses, including zoom lenses and focusing lenses.

[0325] The camera unit 11402 includes camera elements, which can be one (single-plate type) or multiple (multi-plate type). For example, when the camera unit 11402 is configured as a multi-plate type, each camera element can generate image signals corresponding to R, G, and B respectively, and these image signals can be synthesized to obtain a color image. The camera unit 11402 can also be configured to have a pair of camera elements for acquiring right-eye and left-eye image signals respectively corresponding to 3D (three-dimensional) display. If 3D display is performed, the surgeon 11131 can more accurately determine the depth of biological tissue in the surgical site. Note that when the camera unit 11402 is configured as a stereoscopic type, a system of multiple lens units 11401 is provided to correspond to their respective camera elements.

[0326] Furthermore, the camera unit 11402 does not necessarily have to be located on the camera head 11102. For example, the camera unit 11402 can be located inside the lens barrel 11101 immediately after the objective lens.

[0327] The drive unit 11403 includes an actuator, and under the control of the camera head control unit 11405, moves the zoom lens and focusing lens of the lens unit 11401 a predetermined distance along the optical axis. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0328] Communication unit 11404 includes a communication device for sending and receiving various types of information to and from CCU 11201. Communication unit 11404 transmits image signals obtained from camera unit 11402 as RAW data to CCU 11201 via transmission cable 11400.

[0329] Furthermore, the communication unit 11404 receives control signals from the CCU 11201 for controlling the drive of the camera head 11102, and provides these control signals to the camera head control unit 11405. The control signals include information related to imaging conditions, such as information for specifying the frame rate of the captured image, information for specifying the exposure value during image capture, and / or information for specifying the magnification and focus of the captured image.

[0330] Note that the camera conditions, such as frame rate, exposure value, magnification, or focus, can be specified by the user, or the control unit 11413 of the CCU 11201 can automatically set these camera conditions based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with AE (automatic exposure), AF (automatic focus), and AWB (automatic white balance) functions.

[0331] The camera head control unit 11405 controls the drive of the camera head 11102 based on control signals received from the CCU 11201 via the communication unit 11404.

[0332] The communication unit 11411 includes communication means for sending various information to and receiving various information from the camera head 11102. The communication unit 11411 receives image signals sent from the camera head 11102 via a transmission cable 11400.

[0333] Furthermore, the communication unit 11411 sends control signals for controlling the drive of the camera head 11102 to the camera head 11102. It can transmit image signals and control signals via electrical communication, optical communication, etc.

[0334] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data sent from the camera head 11102.

[0335] The control unit 11413 performs various controls related to capturing images of the surgical site, etc., through the endoscope 11100 and displaying the captured images obtained through capturing images of the surgical site, etc. For example, the control unit 11413 generates control signals for controlling the drive of the camera head 11102.

[0336] Furthermore, the control unit 11413 controls the display device 11202 to display captured images of the surgical site, etc., based on the image signal that has already been processed by the image processing unit 11412. At this time, the control unit 11413 can use various image recognition technologies to identify various objects in the captured images. For example, the control unit 11413 can identify surgical tools such as tweezers used when the energy device 11112 is used, specific biological sites, bleeding, and haze by detecting the shape, color, etc., of the edges of objects included in the captured images. When the control display device 11202 displays the captured images, the control unit 11413 can overlay various surgical support information onto the image of the surgical site using the recognition results. With the surgical support information overlaid and presented to the surgeon 11131, the workload of the surgeon 11131 can be reduced, and the surgeon 11131 can perform the surgery reliably.

[0337] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable suitable for electrical signal communication, an optical fiber suitable for optical communication, or a composite cable suitable for electrical and optical communication.

[0338] Here, although in the illustrated example, communication is conducted via wired communication using transmission cable 11400, communication between camera head 11102 and CCU 11201 can be conducted wirelessly.

[0339] The foregoing has described examples of endoscopic surgical systems to which the technology of the present invention can be applied. The technology of the present invention can be applied to the endoscope 11100, camera head 11102 (image unit 11402), etc., included in the above-described structure. Specifically, the solid-state imaging device of the present invention can be applied to the image unit 11402. Applying the technology of the present invention to the endoscope 11100, camera head 11102 (image unit 11402), etc., can improve the performance of the endoscope 11100, camera head 11102 (image unit 11402), etc.

[0340] Although the endoscopic surgical system has been used as an example here, the technology of the present invention can be applied to other systems such as microsurgical systems.

[0341] <11. Examples of applications of moving objects>

[0342] The technology of this invention (the Technology) can be applied to a variety of products. For example, the Technology of this invention can be implemented as a device installed on any type of mobile body, such as a car, tram, hybrid vehicle, motorcycle, bicycle, personal mobility device, airplane, drone, ship, and robot.

[0343] Figure 25 This is a block diagram illustrating a schematic construction example of a vehicle control system, which serves as an example of a mobile body control system capable of applying the techniques of embodiments of the present invention.

[0344] The vehicle control system 12000 includes multiple electronic control units connected to each other via a communication network 12001. Figure 25 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a vehicle body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and a comprehensive control unit 12050. Furthermore, the microcomputer 12051, the audio / image output unit 12052, and the in-vehicle network interface (I / F) 12053 are illustrated as the functional structure of the comprehensive control unit 12050.

[0345] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 functions as a control device for the following devices: a drive force generating device, such as an internal combustion engine or drive motor, for generating drive force for the vehicle; a drive force transmission mechanism for transmitting drive force to the wheels; a steering mechanism for adjusting the vehicle's steering angle; a braking device for generating braking force for the vehicle; and similar devices.

[0346] The vehicle system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the vehicle system control unit 12020 functions as a control device for keyless entry systems, smart key systems, power windows, or various lights such as headlights, taillights, brake lights, turn signals, or fog lights. In this case, radio waves transmitted from a portable device that replaces the key or signals from various switches can be input to the vehicle system control unit 12020. The vehicle system control unit 12020 receives the input radio waves or signals and controls the vehicle's door locking devices, power windows, or lights, etc.

[0347] The exterior information detection unit 12030 detects information about the exterior of the vehicle, including the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to an imaging unit 12031. The exterior information detection unit 12030 causes the imaging unit 12031 to capture images of the exterior of the vehicle and receives the captured images. The exterior information detection unit 12030 can perform detection processing of objects such as people, vehicles, obstacles, signs, or road markings, or detection processing of distances to these objects, based on the received images.

[0348] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as information about distance measurement. Furthermore, the light received by the imaging unit 12031 can be visible light or invisible light such as infrared light.

[0349] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that images the driver. Based on the detection information input to the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or determine whether the driver is dozing off.

[0350] The microcomputer 12051 can calculate the control target values ​​used by the drive force generating device, steering mechanism, or braking device based on information about the exterior or interior of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, and can output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing advanced driver assistance system (ADAS) functions, including collision avoidance or impact mitigation, following distance-based driving, cruise control, collision warning, or lane departure warning.

[0351] Furthermore, the microcomputer 12051 can control the drive force generating device, steering mechanism, or braking device, etc., based on information about the exterior or interior of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, to perform cooperative control for the purpose of autonomous driving, which enables the vehicle to drive autonomously without the need for driver operation.

[0352] Furthermore, the microcomputer 12051 can output control commands to the vehicle system control unit 12020 based on information about the vehicle's exterior obtained by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights to switch from high beams to low beams by, for example, based on the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, thereby performing cooperative control for the purpose of anti-glare.

[0353] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or audibly notifying passengers of the vehicle or the exterior of the vehicle. Figure 25 In the example, the audio speaker 12061, display unit 12062, and instrument panel 12063 are illustrated as output devices. The display unit 12062 may include, for example, at least one of a vehicle-mounted display and a head-up display.

[0354] Figure 26 An example of the mounting position of the imaging unit 12031 is illustrated.

[0355] exist Figure 26 In the imaging unit 12031, there are imaging units 12101, 12102, 12103, 12104 and 12105.

[0356] Imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, at the front nose, side mirrors, rear bumper, and rear door of vehicle 12100, as well as at the upper part of the windshield inside the vehicle compartment. Imaging unit 12101 at the front nose and imaging unit 12105 at the upper part of the windshield inside the vehicle compartment primarily acquire images of the front of vehicle 12100. Imaging units 12102 and 12103 at the side mirrors primarily acquire images of the sides of vehicle 12100. Imaging unit 12104 at the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. Imaging unit 12105 at the upper part of the windshield inside the vehicle compartment is mainly used to detect vehicles ahead, pedestrians, obstacles, traffic lights, traffic signs, or lanes, etc.

[0357] By the way, Figure 26 An example of the imaging range of imaging units 12101 to 12104 is illustrated. Imaging range 12111 represents the imaging range of imaging unit 12101 located in the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 located in the side mirrors, respectively. Imaging range 12114 represents the imaging range of imaging unit 12104 located in the rear bumper or rear door. For example, by superimposing the image data captured by imaging units 12101 to 12104, a bird's-eye view of the vehicle 12100 viewed from above is obtained.

[0358] At least one of the imaging units 12101 to 12104 may have the function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0359] For example, the microcomputer 12051 can determine the distance between itself and each three-dimensional object within the imaging range 12111 to 12114, as well as the temporal variation of that distance (relative to the speed of the vehicle 12100), based on distance information obtained from the imaging units 12101 to 12104. It can also extract the closest three-dimensional object to the vehicle 12100, particularly those traveling along the vehicle 12100's path and moving at a predetermined speed (e.g., equal to or greater than 0 km / h) in a direction substantially the same as the vehicle 12100's direction of travel, as the preceding vehicle. Furthermore, the microcomputer 12051 can preset the following distance to be maintained with the preceding vehicle and perform automatic braking control (including following stop control), automatic acceleration control (including following start control), etc. Therefore, cooperative control can be implemented to achieve automatic driving of the vehicle without relying on driver operation.

[0360] For example, the microcomputer 12051 can classify three-dimensional object data of three-dimensional objects into three-dimensional object data of two-wheeled vehicles, standard-sized vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from imaging units 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, the microcomputer 12051 determines the collision risk, which represents the risk of colliding with each obstacle. If the collision risk is equal to or higher than a set value and a collision is therefore possible, the microcomputer 12051 outputs a warning to the driver via audio speaker 12061 or display unit 12062, or performs forced deceleration or collision avoidance steering via drive system control unit 12010. The microcomputer 12051 can thus assist driving to avoid collisions.

[0361] At least one of the imaging units 12101 to 12104 can be an infrared camera that detects infrared light. The microcomputer 12051 can identify a pedestrian, for example, by determining whether a pedestrian exists in the images captured by the imaging units 12101 to 12104. The pedestrian identification is performed, for example, by extracting feature points from the images captured by the imaging units 12101 to 12104, which are infrared cameras; and performing pattern matching processing on a series of feature points representing the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to overlay a quadrilateral outline for emphasis onto the identified pedestrian. The sound / image output unit 12052 can also control the display unit 12062 to display an icon or similar symbol representing a pedestrian at a desired location.

[0362] Examples of vehicle control systems to which the technology of this invention (the present invention) can be applied have been described above. For example, the technology of this invention can be applied to the imaging unit 12031 included in the above-described structure. Specifically, the solid-state imaging device of the present invention can be applied to the imaging unit 12031. Applying the technology of this invention to the imaging unit 12031 can improve the performance of the imaging unit 12031.

[0363] Note that this technology is not limited to the embodiments, usage examples and application examples described above, but can be modified in various forms without departing from the subject matter of this technology.

[0364] Furthermore, the beneficial effects described in this specification are presented as examples only. The resulting beneficial effects are not limited to these, but may include other beneficial effects.

[0365] In addition, this technology can also have the following structure. [1]

[0367] A solid-state imaging device comprising:

[0368] Semiconductor substrate;

[0369] A first photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electrical charge; and

[0370] The second photoelectric conversion unit is disposed above the first photoelectric conversion unit and converts light into electric charge, wherein...

[0371] Both the first photoelectric conversion unit and the second photoelectric conversion unit include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode.

[0372] The first electrode of the second photoelectric conversion unit and the charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion that passes through at least the first photoelectric conversion unit.

[0373] An insulating film portion is disposed on at least a portion of the outer periphery of the conductive portion.

[0374] The insulating film portion includes at least one layer of insulating film, and

[0375] The insulating film with at least one layer has a fixed charge of the same type as the charge accumulated in the charge accumulation unit. [2]

[0377] According to the solid-state imaging device of [1], the at least one insulating film is disposed between the conductive part and the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive part. [3]

[0379] According to the solid-state imaging device described in [1], wherein

[0380] The conductive portion passes through the first photoelectric conversion unit and reaches the interior of the semiconductor substrate, and

[0381] The at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion. [4]

[0383] According to any one of [1] to [3], the solid-state imaging device, wherein the first photoelectric conversion unit and the second photoelectric conversion unit are both arranged to be separate from their respective first electrodes, and the first photoelectric conversion unit and the second photoelectric conversion unit each include a charge accumulation electrode opposite to their respective photoelectric conversion film through an insulating layer. [5]

[0385] According to the solid-state imaging device described in [4], wherein

[0386] The second photoelectric conversion unit has multiple pixels.

[0387] Each pixel has one of the aforementioned charge accumulation electrodes, and

[0388] The charge accumulation unit is shared by the multiple pixels. [6]

[0390] According to the solid-state imaging device described in [4] or [5], wherein

[0391] The first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit are electrically connected to the charge accumulation unit formed in the semiconductor substrate via a conductive portion that passes through at least the first photoelectric conversion unit.

[0392] The insulating film portion is disposed on at least a portion of the outer periphery of the conductive portion.

[0393] The insulating film portion includes the at least one layer of insulating film.

[0394] The at least one insulating film has a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[0395] The first photoelectric conversion unit has multiple first pixels.

[0396] The second photoelectric conversion unit has multiple second pixels.

[0397] Each first pixel has one of the aforementioned charge accumulation electrodes.

[0398] Each second pixel has one of the aforementioned charge accumulation electrodes, and

[0399] The charge accumulation unit is shared by at least one of the plurality of first pixels and at least one of the plurality of second pixels. [7]

[0401] The solid-state imaging device according to any one of [1] to [6], wherein the insulating film portion comprises an insulating film having a fixed charge of the same type as the charge accumulated in the charge accumulation unit and an insulating film having a high dielectric constant material. [8]

[0403] According to the solid-state imaging device described in [7], wherein

[0404] The insulating film, made of a high dielectric constant material, is arranged to cover the outer periphery of the conductive portion.

[0405] The insulating film with a fixed charge is arranged to cover the outer periphery of the insulating film with a high dielectric constant.

[0406] The insulating film with a high dielectric constant is disposed between the conductive portion and the insulating film with a fixed charge, and

[0407] The insulating film with a fixed charge is arranged between the insulating film with a high dielectric constant and the first photoelectric conversion unit. [9]

[0409] According to the solid-state imaging device described in [7], wherein

[0410] The insulating film with a fixed charge is arranged to cover the outer periphery of the conductive portion.

[0411] The insulating film with a high dielectric constant is arranged to cover the outer periphery of the insulating film with a fixed charge.

[0412] The insulating film with a fixed charge is disposed between the conductive portion and the insulating film with a high dielectric constant, and

[0413] The insulating film with a high dielectric constant is arranged between the insulating film with a fixed charge and the first photoelectric conversion unit.

[10]

[0415] According to any one of [1] to [9], the solid-state imaging device further includes a transmission layer disposed between the first electrode and the photoelectric conversion film.

[11]

[0417] According to the solid-state imaging device of

[10] , the at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive portion.

[12]

[0419] According to the solid-state imaging device described in

[10] , wherein

[0420] The conductive portion passes through the first photoelectric conversion unit and reaches the interior of the semiconductor substrate, and

[0421] The at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit, the transmission layer included in the first photoelectric conversion unit, and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

[13]

[0423] A solid-state imaging device comprising:

[0424] Semiconductor substrate;

[0425] The first photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electric charge;

[0426] A second photoelectric conversion unit is disposed above the first photoelectric conversion unit and converts light into electrical charge; and

[0427] The third photoelectric conversion unit is disposed above the second photoelectric conversion unit and converts light into electric charge, wherein...

[0428] The first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit each include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode.

[0429] The first electrode of the second photoelectric conversion unit and the first charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via at least a first conductive portion passing through the first photoelectric conversion unit.

[0430] At least a portion of the outer periphery of the first conductive portion is provided with a first insulating film portion.

[0431] The first insulating film portion includes at least one layer of first insulating film.

[0432] The first insulating film, with at least one layer, has a fixed charge of the same type as the charge accumulated in the first charge accumulation unit.

[0433] The first electrode of the third photoelectric conversion unit and the second charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a second conductive portion that passes through at least the second photoelectric conversion unit and the first photoelectric conversion unit.

[0434] At least a portion of the outer periphery of the second conductive portion is provided with a second insulating film portion.

[0435] The second insulating film portion includes at least one layer of the second insulating film, and

[0436] The second insulating film, which has at least one layer, has a fixed charge of the same type as the charge accumulated in the second charge accumulation unit.

[14]

[0438] According to the solid-state imaging device described in

[13] , wherein

[0439] The at least one layer of the first insulating film is disposed between the first conductive portion and the first photoelectric conversion unit, such that the at least one layer of the first insulating film covers the outer periphery of the first conductive portion, and

[0440] The at least one layer of the second insulating film is disposed between the second conductive part and the second photoelectric conversion unit and between the second conductive part and the first photoelectric conversion unit, such that the at least one layer of the second insulating film covers the outer periphery of the second conductive part.

[15]

[0442] According to the solid-state imaging device described in

[13] or

[14] , the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit are all arranged to be separated from their respective first electrodes, and the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit all include a charge accumulation electrode that is separated from their respective photoelectric conversion films by an insulating layer.

[16]

[0444] The solid-state imaging device according to any one of

[13] to

[15] , wherein the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit each further include a transmission layer disposed between the first electrode and the photoelectric conversion film.

[17]

[0446] According to the solid-state imaging device described in

[16] , wherein

[0447] The at least one layer of the first insulating film is disposed between the first conductive portion and the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one layer of the first insulating film covers the outer periphery of the first conductive portion, and

[0448] The at least one layer of the second insulating film is disposed between the second conductive portion and the second photoelectric conversion unit, the transmission layer included in the second photoelectric conversion unit, the first photoelectric conversion unit, and the transmission layer included in the first photoelectric conversion unit, such that the at least one layer of the second insulating film covers the outer periphery of the second conductive portion.

[18]

[0450] A solid-state imaging device comprising:

[0451] Semiconductor substrates; and

[0452] A photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electrical charge, wherein...

[0453] The photoelectric conversion unit includes at least a first electrode, a second electrode, a transport layer, a photoelectric conversion film disposed between the second electrode and the transport layer, and a charge accumulation electrode disposed separately from the first electrode and opposite to the transport layer via an insulating layer.

[0454] The first electrode passes through at least the photoelectric conversion film and the second electrode.

[0455] The first electrode is electrically connected to a charge accumulation unit formed in the semiconductor substrate.

[0456] An insulating film portion is disposed on at least a portion of the outer periphery of the first electrode.

[0457] The insulating film portion includes at least one layer of insulating film, and

[0458] The insulating film with at least one layer has a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[19]

[0460] According to the solid-state imaging device described in

[18] , the at least one insulating film is disposed between the first electrode and the photoelectric conversion film and the second electrode, such that the at least one insulating film covers the outer periphery of the first electrode.

[20]

[0462] A solid-state imaging device comprising:

[0463] Semiconductor substrates; and

[0464] N (N is an integer greater than or equal to 2) photoelectric conversion units are disposed above the semiconductor substrate and convert light into electrical charge, wherein

[0465] The N photoelectric conversion units have a stacked structure.

[0466] Each of the N photoelectric conversion units includes at least a first electrode, a second electrode, and a photoelectric conversion unit disposed between the first electrode and the second electrode.

[0467] The first electrode of the nth (n is 2 or more and N less) photoelectric conversion unit, counting from the semiconductor substrate side, is electrically connected to the (n-1)th charge accumulation unit formed in the semiconductor substrate via at least the (n-1)th conductive portion passing through the (1st to (n-1)th photoelectric conversion units (n is 2 or more and N less; when n = 2, the 1st photoelectric conversion unit counting from the semiconductor substrate).

[0468] At least a portion of the outer periphery of the (n-1)th conductive portion is provided with an (n-1)th insulating film portion.

[0469] The (n-1)th insulating film portion includes at least one (n-1)th insulating film, and

[0470] The (n-1)th insulating film of the at least one layer has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit. [twenty one]

[0472] According to the solid-state imaging device of

[20] , the at least one layer of the (n-1)th insulating film is disposed between the (n-1)th conductive portion and the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate) such that the at least one layer of the (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion. [twenty two]

[0474] According to the solid-state imaging device described in

[20] , wherein

[0475] The (n-1)th conductive portion passes through the first to (n-1)th photoelectric conversion units (the first photoelectric conversion unit counting from the semiconductor substrate when n=2) and the semiconductor substrate, and

[0476] The at least one layer of the (n-1)th insulating film is disposed between the (n-1)th conductive portion and the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate) and the semiconductor substrate, such that the at least one layer of the (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion. [twenty three]

[0478] The solid-state imaging device according to any one of

[20] to

[22] , wherein each of the N photoelectric conversion units is arranged to be separate from the first electrode included in the corresponding one of the N photoelectric conversion units, and each includes a corresponding charge accumulation electrode among the N charge accumulation electrodes opposite to the photoelectric conversion film included in the corresponding one of the N photoelectric conversion units through an insulating layer. [twenty four]

[0480] According to the solid-state imaging device described in

[23] , wherein

[0481] The nth photoelectric conversion unit has multiple nth pixels.

[0482] Each nth pixel has one nth charge accumulation electrode, and

[0483] The nth charge accumulation unit is shared by the plurality of nth pixels.

[25]

[0485] According to the solid-state imaging device described in

[24] , wherein

[0486] The first electrode of each of the nth photoelectric conversion unit and the 1st to (n-1)th photoelectric conversion units (when n=2, the 1st photoelectric conversion unit from the semiconductor substrate) is electrically connected to the (n-1)th charge accumulation unit formed in the semiconductor substrate via at least the (n-1)th conductive portion passing through the 1st to (n-1)th photoelectric conversion units (when n=2, the 1st photoelectric conversion unit from the semiconductor substrate).

[0487] At least a portion of the outer periphery of the (n-1)th conductive portion is provided with an (n-1)th insulating film portion.

[0488] The (n-1)th insulating film portion includes at least one (n-1)th insulating film.

[0489] The at least one layer of the (n-1)th insulating film has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit.

[0490] The nth photoelectric conversion unit has multiple nth pixels.

[0491] The first to the (n-1)th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate) each have a plurality of first to (n-1)th pixels.

[0492] Each nth pixel has one of the nth charge accumulation electrodes.

[0493] Each of the first to (n-1)th pixels (the first pixel when n=2) has one of the first to (n-1)th charge accumulation electrodes, and

[0494] The (n-1)th charge accumulation unit is shared by at least one of the nth pixels and at least one of the 1st to (n-1)th pixels.

[26]

[0496] The solid-state imaging device according to any one of

[20] to

[25] , wherein the (n-1)th insulating film portion comprises an insulating film having a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit and an (n-1)th insulating film having a high dielectric constant material.

[27]

[0498] According to the solid-state imaging device described in

[26] , wherein

[0499] The (n-1)th insulating film, made of a high dielectric constant material, is arranged to cover the outer periphery of the (n-1)th conductive portion.

[0500] The (n-1)th insulating film with a fixed charge is arranged to cover the outer periphery of the (n-1)th insulating film with a high dielectric constant material.

[0501] The (n-1)th insulating film with a high dielectric constant is disposed between the (n-1)th conductive portion and the (n-1)th insulating film with a fixed charge, and

[0502] The (n-1)th insulating film with a fixed charge is arranged between the (n-1)th insulating film with a high dielectric constant material and the (n-1)th photoelectric conversion unit.

[28]

[0504] According to the solid-state imaging device described in

[26] , wherein

[0505] The (n-1)th insulating film with a fixed charge is arranged to cover the outer periphery of the (n-1)th conductive portion.

[0506] The (n-1)th insulating film with a high dielectric constant is arranged to cover the outer periphery of the (n-1)th insulating film with a fixed charge.

[0507] The (n-1)th insulating film with a fixed charge is disposed between the (n-1)th conductive portion and the (n-1)th insulating film with a high dielectric constant, and

[0508] The (n-1)th insulating film with a high dielectric constant is arranged between the (n-1)th insulating film with a fixed charge and the photoelectric conversion unit.

[29]

[0510] The solid-state imaging device according to any one of

[20] to

[28] , wherein each of the N photoelectric conversion units further includes a corresponding transmission layer among the N transmission layers arranged between the first electrode and the photoelectric conversion film.

[30]

[0512] According to the solid-state imaging device of

[29] , the at least one layer of the (n-1)th insulating film is disposed between the (n-1)th conductive portion and the transmission layer included in the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate) and the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), such that the at least one layer of the (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion.

[31]

[0514] According to the solid-state imaging device described in

[29] , wherein

[0515] The nth conductive portion passes through the first to the (n-1)th photoelectric conversion units (the first photoelectric conversion unit counting from the semiconductor substrate when n=2) and the semiconductor substrate, and

[0516] The at least one layer of the (n-1)th insulating film is disposed between the (n-1)th conductive portion and the transport layer included in the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), the first to (n-1)th photoelectric conversion units (when n=2, the first photoelectric conversion unit from the semiconductor substrate), and the semiconductor substrate, such that the at least one layer of the (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion.

[32]

[0518] A solid-state imaging device comprising:

[0519] Semiconductor substrate;

[0520] A first photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electrical charge; and

[0521] The second photoelectric conversion unit is disposed above the first photoelectric conversion unit and converts light into electric charge, wherein...

[0522] Both the first photoelectric conversion unit and the second photoelectric conversion unit include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode.

[0523] A connection hole is formed passing through the first photoelectric conversion unit and the semiconductor substrate to electrically connect the first electrode of the second photoelectric conversion unit to a charge accumulation unit formed in the semiconductor substrate.

[0524] The connecting hole has a conductive part and an insulating film part formed therein.

[0525] The insulating film portion includes at least one layer of insulating film, and

[0526] The insulating film with at least one layer has a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[33]

[0528] According to the solid-state imaging device of

[32] , the at least one insulating film is disposed between the conductive part and the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive part.

[34]

[0530] According to the solid-state imaging device of

[32] , the at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

[35]

[0532] The solid-state imaging device according to any one of

[32] to

[34] , wherein the first photoelectric conversion unit and the second photoelectric conversion unit are both arranged to be separate from their respective first electrodes, and the first photoelectric conversion unit and the second photoelectric conversion unit both include a charge accumulation electrode opposite to their respective photoelectric conversion films through an insulating layer.

[36]

[0534] The solid-state imaging device according to any one of

[32] to

[35] , wherein

[0535] The second photoelectric conversion unit has multiple pixels.

[0536] Each pixel has one of the aforementioned charge accumulation electrodes, and

[0537] The charge accumulation unit is shared by the multiple pixels.

[37]

[0539] The solid-state imaging device according to any one of

[32] to

[36] , wherein

[0540] A connection hole is formed passing through the first photoelectric conversion unit and the semiconductor substrate to electrically connect the first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit to a charge accumulation unit formed in the semiconductor substrate.

[0541] The connecting hole has a conductive part and an insulating film part formed therein.

[0542] The insulating film portion includes at least one layer of insulating film.

[0543] The at least one insulating film has a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[0544] The first photoelectric conversion unit has multiple first pixels.

[0545] The second photoelectric conversion unit has multiple second pixels.

[0546] Each first pixel has one of the aforementioned charge accumulation electrodes.

[0547] Each second pixel has one of the aforementioned charge accumulation electrodes, and

[0548] The charge accumulation unit is shared by at least one of the plurality of first pixels and at least one of the plurality of second pixels.

[38]

[0550] The solid-state imaging device according to any one of

[32] to

[37] , wherein the insulating film portion comprises an insulating film having a fixed charge of the same type as the charge accumulated in the charge accumulation unit and an insulating film having a high dielectric constant material.

[39]

[0552] According to the solid-state imaging device described in

[38] , wherein

[0553] The insulating film, made of a high dielectric constant material, is arranged to cover the outer periphery of the conductive portion.

[0554] The insulating film with a fixed charge is arranged to cover the outer periphery of the insulating film with a high dielectric constant.

[0555] The insulating film with a high dielectric constant is disposed between the conductive portion and the insulating film with a fixed charge, and

[0556] The insulating film with a fixed charge is arranged between the insulating film with a high dielectric constant and the first photoelectric conversion unit.

[40]

[0558] According to the solid-state imaging device described in

[38] , wherein

[0559] The insulating film with a fixed charge is arranged to cover the outer periphery of the conductive portion.

[0560] The insulating film with a high dielectric constant is arranged to cover the outer periphery of the insulating film with a fixed charge.

[0561] The insulating film with a fixed charge is disposed between the conductive portion and the insulating film with a high dielectric constant, and

[0562] The insulating film with a high dielectric constant is arranged between the insulating film with a fixed charge and the first photoelectric conversion unit.

[41]

[0564] The solid-state imaging device according to any one of

[32] to

[40] , wherein the first photoelectric conversion unit and the second photoelectric conversion unit further include a transmission layer disposed between the first electrode and the photoelectric conversion film.

[42]

[0566] According to the solid-state imaging device of

[41] , the at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive portion.

[43]

[0568] According to the solid-state imaging device of

[41] , the at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit, the transmission layer included in the first photoelectric conversion unit and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

[44]

[0570] A solid-state imaging device comprising:

[0571] Semiconductor substrate;

[0572] A first photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electrical charge; and

[0573] The second photoelectric conversion unit is disposed above the first photoelectric conversion unit and converts light into electric charge, wherein...

[0574] Both the first photoelectric conversion unit and the second photoelectric conversion unit include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode.

[0575] The first electrode of the second photoelectric conversion unit and the charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion that passes through at least the photoelectric conversion film of the first photoelectric conversion unit.

[0576] An insulating film portion is disposed on at least a portion of the outer periphery of the conductive portion.

[0577] The insulating film portion includes at least one layer of insulating film, and

[0578] The insulating film with at least one layer has a fixed charge of the same type as the charge accumulated in the charge accumulation unit.

[45]

[0580] An electronic device having a solid-state imaging device according to any one of [1] to

[44] .

[0581] List of reference numerals in the attached figures

[0582] 1(1-1, 1-2, 1-10): Charge accumulation electrode

[0583] 2(2-1, 2-2): Second electrode

[0584] 3, 5, 35: Photoelectric conversion film

[0585] 4, 4-1, 6, 46: Transport Layer

[0586] 7, 8, 7000: First electrode (reading electrode)

[0587] 9: Photodiode (PD)

[0588] 10, 10-3, 11: Insulation layer

[0589] 12, 14, 15: Conductive parts (through electrodes)

[0590] 13, 130, 131 (131-1, 131-2): Through holes

[0591] 30: Semiconductor substrate

[0592] 41, 42, 43, 44, 45: Charge accumulation units (floating diffusion (FD))

[0593] 51(51-1, 51-2), 52(52-1, 52-2), 53(53-c, 53-d, 53-e, 53-f), 54(54-c, 54-d, 54-e, 54-f), 55(55-a, 55-b ), 56 (56-1, 56-2), 57 (57-1, 57-2), 58 (58-1, 58-2), 59 (59-1, 59-2), 510 (510-1, 510-2), 511a (511a-1, 51 1a-2), 511b(511b-1, 511b-2), 513(513-1, 513-2), 514(514-1, 514-2), 515a(515a-1, 515a-2), 515b(515b-1, 515b-2), 516(516-1, 516-2), 517(517-1, 517-2), 518(518-1, 518-2), 519(519-1, 519-2): Insulating films with fixed charges

[0594] 150 (150-1, 150-2, 150-6, 150-7, 150-8, 150-9, 150-10, 150-11, 150-15, 150-16, 150-17), 160 (160-13, 160-14), 1214 (1214-1, 1214-2, 1214-6, 1214-7, 1214-8, 1214-9, 1214-10, 1214-11, 1214-15-1, 1214-15-2, 1214-16, 1214-17: Connecting holes)

[0595] 100, 200, 300, 400, 500 (500a, 500b), 600, 700, 800, 900, 1000, 1100, 1200 (1200a, 1200b), 1300, 1400, 1500, 1600, 1700: Solid-state imaging devices

Claims

1. A solid-state imaging device, comprising: Semiconductor substrate; The first photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electric charge; and The second photoelectric conversion unit is disposed above the first photoelectric conversion unit and converts light into electric charge, wherein... Both the first photoelectric conversion unit and the second photoelectric conversion unit include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and the charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion that passes through the first photoelectric conversion unit. An insulating film portion is disposed on at least a portion of the outer periphery of the conductive portion. The insulating film portion includes at least one layer of insulating film, and The at least one insulating film has a fixed charge of the same type as the charge accumulated in the charge accumulation unit. The at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive portion, and The insulating film of at least one layer is in contact with the first photoelectric conversion unit.

2. The solid-state imaging device according to claim 1, wherein... The conductive portion passes through the first photoelectric conversion unit and reaches the interior of the semiconductor substrate, and The at least one insulating film is disposed between the conductive portion and the first photoelectric conversion unit and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

3. The solid-state imaging device according to claim 1, wherein, Both the first photoelectric conversion unit and the second photoelectric conversion unit are arranged to be separate from their respective first electrodes, and both the first photoelectric conversion unit and the second photoelectric conversion unit include a charge accumulation electrode that is separated from their respective photoelectric conversion films by an insulating layer.

4. The solid-state imaging device according to claim 3, wherein The second photoelectric conversion unit has multiple pixels. Each of the pixels has one of the charge accumulation electrodes, and The charge accumulation unit is shared by multiple pixels.

5. The solid-state imaging device according to claim 3, wherein... The first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit are electrically connected to the charge accumulation unit formed in the semiconductor substrate via a conductive portion that passes through at least the first photoelectric conversion unit. The insulating film portion is disposed on at least a portion of the outer periphery of the conductive portion. The insulating film portion includes the at least one layer of insulating film. The at least one insulating film has a fixed charge of the same type as the charge accumulated in the charge accumulation unit. The first photoelectric conversion unit has multiple first pixels. The second photoelectric conversion unit has multiple second pixels. A first pixel has one of the said charge accumulation electrodes. A second pixel has one of the said charge accumulation electrodes, and The charge accumulation unit is shared by at least one of the plurality of first pixels and at least one of the plurality of second pixels.

6. The solid-state imaging device according to claim 1, wherein, The insulating film portion includes an insulating film having a fixed charge of the same type as the charge accumulated in the charge accumulation unit and an insulating film having a high dielectric constant material.

7. The solid-state imaging device according to claim 6, wherein... The insulating film having the high dielectric constant material is arranged to cover the outer periphery of the conductive portion. The insulating film having the fixed charge is arranged to cover the outer periphery of the insulating film having the high dielectric constant material. The insulating film having the high dielectric constant material is disposed between the conductive portion and the insulating film having the fixed charge, and The insulating film with the fixed charge is disposed between the insulating film with the high dielectric constant material and the first photoelectric conversion unit.

8. The solid-state imaging device according to claim 1, wherein, Both the first photoelectric conversion unit and the second photoelectric conversion unit further include a transmission layer disposed between their respective first electrodes and their respective photoelectric conversion films.

9. The solid-state imaging device according to claim 8, wherein, The at least one insulating film is disposed between the conductive portion and the photoelectric conversion film included in the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the conductive portion.

10. The solid-state imaging device according to claim 8, wherein The conductive portion passes through the first photoelectric conversion unit and reaches the interior of the semiconductor substrate, and The at least one insulating film is disposed between the conductive portion and the photoelectric conversion film included in the first photoelectric conversion unit, the transmission layer included in the first photoelectric conversion unit, and the semiconductor substrate, such that the at least one insulating film covers the outer periphery of the conductive portion.

11. A solid-state imaging device, comprising: Semiconductor substrate; The first photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electric charge; The second photoelectric conversion unit is disposed above the first photoelectric conversion unit and converts light into electric charge; and The third photoelectric conversion unit is disposed above the second photoelectric conversion unit and converts light into electric charge, wherein... The first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit each include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and the first charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via at least a first conductive portion passing through the first photoelectric conversion unit. At least a portion of the outer periphery of the first conductive portion is provided with a first insulating film portion. The first insulating film portion includes at least one layer of first insulating film. The first insulating film, with at least one layer, has a fixed charge of the same type as the charge accumulated in the first charge accumulation unit. The at least one layer of the first insulating film is disposed between the first conductive portion and the first photoelectric conversion unit, such that the at least one layer of the first insulating film covers the outer periphery of the first conductive portion, and The first insulating film, with at least one layer, is in contact with the first photoelectric conversion unit. The first electrode of the third photoelectric conversion unit and the second charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a second conductive portion that passes through at least the second photoelectric conversion unit and the first photoelectric conversion unit. At least a portion of the outer periphery of the second conductive portion is provided with a second insulating film portion. The second insulating film portion includes at least one layer of the second insulating film, and The second insulating film, which has at least one layer, has a fixed charge of the same type as the charge accumulated in the second charge accumulation unit.

12. The solid-state imaging device according to claim 11, wherein... The at least one layer of the second insulating film is disposed between the second conductive part and the second photoelectric conversion unit and between the second conductive part and the first photoelectric conversion unit, such that the at least one layer of the second insulating film covers the outer periphery of the second conductive part.

13. The solid-state imaging device according to claim 11, wherein, The first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit are all arranged to be separated from their respective first electrodes, and each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit includes a charge accumulation electrode that is separated from its respective photoelectric conversion film by an insulating layer.

14. The solid-state imaging device according to claim 11, wherein, The first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit all further include a transmission layer disposed between their respective first electrodes and their respective photoelectric conversion films.

15. The solid-state imaging device according to claim 11, wherein... The at least one layer of the first insulating film is disposed between the first conductive portion and the photoelectric conversion film included in the first photoelectric conversion unit and the transmission layer included in the first photoelectric conversion unit, such that the at least one layer of the first insulating film covers the outer periphery of the first conductive portion, and The at least one layer of the second insulating film is disposed between the second conductive portion and the photoelectric conversion film included in the second photoelectric conversion unit, the transmission layer included in the second photoelectric conversion unit, the photoelectric conversion film included in the first photoelectric conversion unit, and the transmission layer included in the first photoelectric conversion unit, such that the at least one layer of the second insulating film covers the outer periphery of the second conductive portion.

16. A solid-state imaging device, comprising: Semiconductor substrate; and A photoelectric conversion unit is disposed above the semiconductor substrate and converts light into electrical charge, wherein... The photoelectric conversion unit includes at least a first electrode, a second electrode, a transport layer, a photoelectric conversion film disposed between the second electrode and the transport layer, and a charge accumulation electrode disposed separately from the first electrode and opposite to the transport layer via an insulating layer. The first electrode extends at least through the photoelectric conversion film and the second electrode. The first electrode is electrically connected to a charge accumulation unit formed in the semiconductor substrate. An insulating film portion is disposed on at least a portion of the outer periphery of the first electrode. The insulating film portion includes at least one layer of insulating film, and The at least one insulating film has a fixed charge of the same type as the charge accumulated in the charge accumulation unit. The at least one insulating film is disposed between the first electrode and the photoelectric conversion unit, such that the at least one insulating film covers the outer periphery of the first electrode, and The insulating film of at least one layer is in contact with the photoelectric conversion unit.

17. The solid-state imaging device according to claim 16, wherein, The at least one insulating film is disposed between the first electrode, the photoelectric conversion film, and the second electrode, such that the at least one insulating film covers the outer periphery of the first electrode.

18. A solid-state imaging device, comprising: Semiconductor substrate; and N photoelectric conversion units are disposed above the semiconductor substrate and convert light into electric charge, where N is an integer greater than or equal to 2. The N photoelectric conversion units have a stacked structure. Each of the N photoelectric conversion units includes at least a first electrode, a second electrode, and a photoelectric conversion unit disposed between the first electrode and the second electrode. The first electrode of the nth photoelectric conversion unit counting from the semiconductor substrate side is electrically connected to the (n-1)th charge accumulation unit formed in the semiconductor substrate via at least the (n-1)th conductive portion passing through the 1st to (n-1)th photoelectric conversion units counting from the semiconductor substrate, wherein n is 2 or more and N is less than or equal to 2. At least a portion of the outer periphery of the (n-1)th conductive portion is provided with an (n-1)th insulating film portion. The (n-1)th insulating film portion includes at least one (n-1)th insulating film, and The at least one layer of the (n-1)th insulating film has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation unit. Wherein, the at least one (n-1)th insulating film is disposed between the (n-1)th conductive portion and the (n-1)th photoelectric conversion unit, such that the at least one (n-1)th insulating film covers the outer periphery of the (n-1)th conductive portion, and The (n-1)th insulating film of at least one layer is in contact with the (n-1)th photoelectric conversion unit.

19. The solid-state imaging device according to claim 18, wherein, When n=2, the first electrode of the second photoelectric conversion unit counting from the semiconductor substrate side is electrically connected to the first charge accumulation unit formed in the semiconductor substrate via at least the first conductive portion passing through the first photoelectric conversion unit counting from the semiconductor substrate.

20. An electronic device having a solid-state imaging device according to any one of claims 1 to 19.

Images