A method for characterizing the morphology of semiconductor materials in mesopores

By peeling off the glue layer layer by layer on the surface of the mesoporous material and stacking imaging, the problem of cumbersome characterization of semiconductor materials in the prior art mesoporous pores and high sample requirements is solved, and the effect of quickly obtaining the three-dimensional morphology map of semiconductor materials is achieved.

CN115165495BActive Publication Date: 2025-03-28HUBEI WONDER SOLAR LLC
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Patent Information

Application Number
CN202210804608.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-07-08
Publication Date
2025-03-28
Estimated Expiration
2042-07-08

AI Technical Summary

Technical Problem

The growth morphology characterization method of semiconductor materials in mediated pores has cumbersome sample preparation process, high sample requirements, and the overall morphology characteristics at the macroscopic cannot be known.

Method used

By applying the glue layer to the surface of the mesoporous material, the glue layer is peeled off layer by layer until the mesoporous material cannot be peeled off, multiple peeling pictures are obtained, and a three-dimensional morphology of the semiconductor material in the mesoporous structure is obtained through stacking imaging.

Benefits of technology

It achieves rapid and convenient access to the overall morphological characteristics of semiconductor materials in mesoporous structures, without the need for cumbersome sample preparation process, low sample requirements, simple operation, low cost, and fast information acquisition speed.

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Abstract

The present invention provides a method for characterizing the morphology of semiconductor materials in mesopores, comprising the following steps: taking a material to be tested, applying a glue layer on the surface of the material to be tested, and tearing off the glue layer to obtain a first textured glue layer with mesoporous material adhered thereto; applying a glue layer on the surface of the material to be tested, and tearing off the glue layer to obtain a second textured glue layer with mesoporous material adhered thereto; repeating the steps of applying the glue layer and tearing off the glue layer until there is no trace of mesoporous material on the obtained textured glue layer, thereby obtaining an nth textured glue layer; according to the obtained textured glue layer, in the order from the first textured glue layer to the nth textured glue layer, n peeling pictures are obtained, and the peeling pictures are processed to obtain the growth morphology of the semiconductor material in the mesopores. The method for characterizing the morphology of semiconductor materials in mesopores described in the present invention can conveniently and quickly obtain the morphological characteristics of three-dimensional semiconductor materials grown in mesoporous structures.
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