Substrate with integrated passive devices and preparation method thereof

By integrating passive devices on the transparent dielectric layer, the problem of large size and high power consumption of discrete devices on traditional RF PCB boards is solved, and the integration of miniaturized, low-power and high-performance RF device is achieved.

CN115516588BActive Publication Date: 2025-03-28BOE TECHNOLOGY GROUP CO LTD
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Patent Information

Application Number
CN202180000865.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-04-23
Publication Date
2025-03-28
Estimated Expiration
2041-04-23

AI Technical Summary

Technical Problem

There are a large number of discrete devices on existing RF PCB boards, which are large in size, high in power consumption, many solder joints, and large changes in parasitic parameters, making it difficult to meet future needs. At the same time, integrated passive devices on the market are mainly based on Si or GaAs substrates. Si-based devices have high microwave losses and average performance, while GaAs-based devices are expensive.

Method used

A transparent dielectric layer, such as a glass substrate, integrates passive devices, and the device integration is achieved by forming inductors and capacitors on the dielectric layer, and the plating and patterning processes are used to form connecting electrodes and substructures.

Benefits of technology

The integration of RF devices with small size, light weight, high performance and low power consumption is achieved, solving the disadvantages of traditional discrete devices, reducing costs and improving performance.

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Abstract

The present disclosure provides a substrate integrated with passive devices and a preparation method thereof, belonging to the field of radio frequency technology. The preparation method of the substrate integrated with passive devices disclosed in the present disclosure includes integrating passive devices on a transparent dielectric layer; forming the passive devices at least includes forming an inductor; the inductor includes a first substructure formed on the first surface and a second substructure formed on the second surface, and a first connecting electrode formed in a first connecting via hole to sequentially connect the first substructure and the second substructure; forming the inductor includes: forming a first metal film layer on the first surface and / or the second surface of the transparent dielectric layer, and forming a first connecting electrode in the first connecting via hole by an electroplating process; the first connecting electrode fills the first connecting via hole; forming a pattern including the first substructure on the first surface of the transparent dielectric layer and forming a pattern including the second substructure on the second surface of the transparent dielectric layer by a patterning process respectively.
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