Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer
By performing grinding and etching with a polishing film of particle size #4000 at the edge of the indium phosphide substrate, the surface contamination problem caused by edge residues was solved, improving the substrate yield and epitaxial growth quality.
CN116057212BActive Publication Date: 2026-06-12JX NIPPON MINING & METALS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JX NIPPON MINING & METALS CORP
- Filing Date
- 2021-10-07
- Publication Date
- 2026-06-12
AI Technical Summary
⚠Technical Problem
The high surface roughness at the edges of indium phosphide substrates leads to residues of grinding particles and polishing fluid, causing surface contamination and affecting yield and epitaxial growth quality.
⚗Method used
The root mean square height Sq of the edge is controlled to be below 0.15 μm by polishing with a polishing film of particle size #4000 at the edge of the indium phosphide substrate, and then etched to remove surface roughness.
🎯Benefits of technology
It effectively suppresses the movement of residues at the edges, prevents substrate surface contamination, and improves yield and surface quality after epitaxial growth.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116057212B_ABST
Abstract
Provided is an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer, which can suppress the occurrence of contamination of the surface of the indium phosphide substrate caused by residues in the edge portion. An indium phosphide substrate, wherein, with respect to the surface roughness of the edge portion of the substrate, the root mean square height Sq measured using a laser microscope is 0.15 μm or less over the entire surface of the edge portion.
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