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31700results about "Polycrystalline material growth" patented technology

Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film

ActiveUS20090152506A1Orientation can be controlledLow costFrom gel stateFrom solid stateOrganic solventDevice material
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device

PCT No. PCT / JP98 / 01640 Sec. 371 Date Dec. 9, 1998 Sec. 102(e) Date Dec. 9, 1998 PCT Filed Apr. 9, 1998 PCT Pub. No. WO98 / 47170 PCT Pub. Date Oct. 22, 1998A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

Method for manufacturing semiconductor device

A semiconductor manufacturing apparatus A semiconductor manufacturing apparatus comprises a hot plate which heats a sapphire substrate; a support table having a support plate disposed with being spaced away from the hot plate by a predetermined interval, and support portions which respectively support the sapphire substrate with being spaced by a predetermined interval between the hot plate and the support plate and support the sapphire substrate in such a manner that back surfaces of the hot plate and the sapphire substrate are opposite to each other; an elevating device which moves the support table up and down; and a shielding cover which externally blocks off spacing defined between the hot plate and the sapphire substrate and spacing defined between the sapphire substrate and the support plate.

Method of semiconductor film stabilization

Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor gas is then introduced into the chamber concurrently with a stressor precursor gas, such as a tin precursor gas, to form an epitaxial layer. The flow of the germanium gas is then halted, and an etchant gas is introduced into the chamber. An etch back is then performed while in the presence of the stressor precursor gas used in the formation of the epitaxial film. The flow of the etchant gas is then stopped, and the cycle may then be repeated. In addition to or as an alternative to the etch back process, an annealing processing may be performed.

High Flow GaCl3 Delivery

The present invention is an apparatus for deliverying high purity gallium trichloride in the vapor phase to a gallium nitride reactor, comprising; a source of carrier gas at an elevated pressure; a purifier to remove moisture from the carrier gas; a heater capable of heating the carrier gas to at least 80° C.; a container having a supply of gallium trichloride, a valve controlled inlet for the carrier gas having a dip tube with an outlet below the level of the gallium trichloride, a valve controlled outlet for removing the carrier gas and entrained gallium trichloride; a heater capable of heating sufficient to melt the gallium trichloride; a delivery line connected to the valve controlled outlet for carrying the entrained gallium trichloride to a reaction zone for gallium nitride. A process is also described for the apparatus.

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices

A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Systems and methods for additive manufacturing and repair of metal components

Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.
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