18575results about "Polycrystalline material growth" patented technology

The invention relates to a monocrystalline silicon thermal field multi-section dynamic cooperative heating control method and system, and the method comprises the following steps: constructing a thermal field multi-section temperature coupling model, dividing a thermal field into n axial heating sections, and building a dynamic relation between power input and temperature gradient; a deep reinforcement learning agent is designed, the state space of the deep reinforcement learning agent integrates the temperature of each heating section, the crystal lifting speed, the crucible lifting speed and the temperature gradient, and the action space outputs the power adjusting quantity of each heating section; defining a multi-target reward function, and jointly optimizing temperature gradient tracking, total power change and crucible bottom safety threshold; training the intelligent agent offline based on the thermal field model, and optimizing the strategy network; an intelligent agent is deployed online, and a power adjusting instruction is generated in real time; the control strategy is dynamically corrected, and online fine adjustment is performed through setting trigger adjustment. According to the method, the defects of a traditional method in the aspects of temperature gradient control precision, energy consumption economy and abnormal working condition self-adaptability are overcome, and the growth quality and efficiency of monocrystalline silicon are remarkably improved.

The invention belongs to the technical field of crystal growth, and provides a low-resistivity silicon carbide single crystal growth method and system and a single crystal, silicon carbide powder is uniformly paved at the bottom of a graphite crucible, metal carbide material particles are uniformly paved on the surface of the silicon carbide powder, and silicon carbide seed crystals are adhered to the top of the graphite crucible; the graphite crucible is sealed, and the interior of the graphite crucible is vacuumized; heating the graphite crucible subjected to vacuumizing treatment, filling carrier gas into the graphite crucible, then slowly replacing the carrier gas with doped source gas, slowly increasing the growth pressure to a set pressure, and growing a buffer layer; after the growth of the buffer layer is completed, changing the growth condition to grow the heavily doped silicon carbide single crystal; and after the growth of the crystal is completed, cooling the graphite crucible subjected to vacuumizing treatment, so that the crystal is naturally cooled, and the low-resistivity silicon carbide single crystal is obtained. The doping concentration of the silicon carbide single crystal can be improved, and the resistivity of the silicon carbide material can be reduced.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention provides a temperature optimization method for a gallium source furnace of a molecular beam epitaxy system, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: under a plurality of different filament temperature difference conditions, epitaxially growing epitaxial layers with preset structures to obtain a plurality of epitaxial wafers corresponding to the temperature difference conditions; measuring and acquiring surface defect data of the epitaxial wafer; establishing a model for representing the relationship between the defect data and the filament temperature difference; calculating a constant value in the model through numerical fitting; and substituting the constant value into the model, calculating and solving the minimum value of y in the model, and taking the filament temperature difference corresponding to the minimum value of y as the filament temperature difference of the gallium source furnace during next epitaxial growth. According to the method, the model is established, the model constant value is solved, and the filament temperature difference corresponding to the minimum surface defect is obtained by using the model, so that the filament temperature difference of the gallium source furnace is optimized and the surface defect is reduced. In mass production, the measurement results are continuously added to fitting data of the model, so that the process conditions can be continuously improved.

The present invention relates to a reaction chamber comprising a removable reaction unit and a susceptive casing. The present invention further relates to a reactor incorporating said reaction chamber, and to an assembly comprising said reactor. Additionally, the present invention relates to a method adapted to reduce the preventive maintenance times of the reactor hereinbefore described, and to the use of said reactor in the homoepitaxial or heteroepitaxial deposition of silicon carbide or gallium nitride films on a semiconductor substrate.

The invention discloses a wafer separation device and a wafer separation method. The wafer separating device comprises a container used for bearing a crystal ingot; the ultrasonic vibrator is arranged on the bottom wall of the container and used for providing primary high-frequency ultrasonic vibration for the crystal ingot immersed in the liquid in the container so as to pre-strip the crystal ingot; the stripping mechanism comprises a lifting assembly and an ultrasonic tool head, the lifting assembly is connected with the ultrasonic tool head and used for driving the ultrasonic tool head to make contact with the end face of the crystal ingot, and the ultrasonic tool head is used for providing secondary high-frequency ultrasonic vibration for the crystal ingot when making contact with the end face of the crystal ingot so as to strip the wafer from the crystal ingot. Through the above mode, the wafer separation device provided by the invention optimizes the uniformity of crack propagation and the accuracy of the stripping process through the combination of liquid-conducted overall ultrasound and direct contact ultrasound, and significantly improves the stability and efficiency of wafer stripping.

The objective of the present invention is to provide a method for preparing cremation crystals, the method using phosphoric acid extracted from cremated remains as a catalyst in the heat treatment of ashes so that transparent cremation crystals can be prepared only with components of skeletal remains derived from a single individual, and using only skeletal remains of a single individual through the control of the classification ratio of raw bone powder and phosphorus-extracted bone powder, and the like, so that the amount of phosphorus in the crystals is controlled, thereby enabling cremation crystals transparency to be controlled, and thus aesthetic requirements of consumers are satisfied and use as various kinds of jewelry is also facilitated.

The present disclosure describes electrochromic devices comprising transparent conductive layer acting as an electrode, an active electrochromic film, an ion conductor, and an ion storage film at least one of which comprises at least one MXene material.

The present application relates to the technical field of carbon / carbon composite materials, and specifically discloses a carbon-carbon guide tube and a preparation method thereof. The preparation method of the carbon-carbon guide tube comprises: cutting carbon fibers into short fibers, combing the short fibers into a mesh; immersing the mesh into an impregnation liquid in the equipment to obtain a pre-impregnated mesh; laying multiple layers of impregnated mesh on the surface of a mold; curing the multiple layers of impregnated mesh on the mold, demolding to obtain a blank; carbonizing and graphitizing the blank; subjecting the graphitized blank to a chemical vapor deposition densification process and a pyrolytic carbon coating process in sequence to obtain a carbon-carbon guide tube. The method for preparing the carbon-carbon guide tube does not require the preparation of a preform, thereby eliminating the problem of carbon fiber waste generated during the manufacturing process of the preform, and can shorten the manufacturing cycle, improve production efficiency, and reduce production costs. The carbon-carbon guide tube prepared by the method has good mechanical properties and corrosion resistance, and can meet the use requirements of the guide tube for the thermal field of a photovoltaic direct-pull single crystal silicon furnace.

The invention provides a method for determining the volatilization behavior of antimony, a silicon single crystal rod, a silicon wafer and a solar cell, and the method comprises the steps: determining the volatilization behavior of antimony in a leading and releasing stage and / or an equal-diameter stage: in the leading and releasing stage, pulling out a small end from molten silicon; the total feeding amount and the initial antimony concentration are obtained; the mass, the phosphorus-antimony concentration and the phosphorus concentration of the small head are obtained; according to the total feeding amount, the phosphorus-antimony concentration, the initial antimony concentration and the phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-diameter stage, the actual resistivity of the silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the single crystal pulling process can be determined.

The invention discloses a method for remote epitaxial growth of a nitride film on a silicon substrate, the nitride film and a semiconductor device.The method comprises the following steps that surface nitriding treatment is conducted on the silicon substrate, so that a Si3N4 layer is formed on the surface of the silicon substrate; a single-layer graphene layer is formed on the surface of the side, provided with the Si3N4 layer, of the silicon substrate; performing remote epitaxial growth of a nitride film on the single-layer graphene layer; wherein the lattice information of the nitride film is the same as the lattice structure information of the Si3N4 layer. By adopting the technical scheme provided by the invention, remote epitaxial growth of the nitride film on the silicon substrate can be realized.

The invention belongs to the technical field of semiconductor photoelectric devices, and particularly discloses a preparation method for realizing growth of ultralow-defect perovskite single crystals based on steric hindrance control, which comprises the following steps: preparing a perovskite single crystal precursor solution: dissolving a perovskite single crystal precursor in a homogeneous solvent with coordination capability to prepare the precursor solution; and generating a perovskite single crystal seed crystal: heating the prepared perovskite single crystal precursor solution until microcrystals appear, selecting to form good crystals, drying, and storing as the seed crystal for future use. And growing the perovskite single crystal: putting the generated perovskite single crystal seed crystal into the perovskite single crystal precursor solution, heating, and growing to obtain the perovskite single crystal. The preparation method comprises the following steps: dissolving a precursor in a homogeneous solvent with coordination capability through a temperature reversal crystallization method, and adjusting the temperature to carry out single crystal growth; according to the steric hindrance theory, the growth temperature is selected by regulating and controlling the solvent proportion, and the perovskite single crystal with ultralow defect density is obtained.

The invention discloses a method for improving the heat dissipation performance of an AlGaInP red light Micro LED chip. The method comprises the following steps: S1, preparing an epitaxial structure: processing a substrate and a buffer layer, growing an etching barrier layer and an ohmic contact layer, and carrying out stacking epitaxy on a functional layer; s2, patterning the silicon-based substrate: preparing a dielectric layer and a metal structure; s3, diamond ohmic contact layer integration: processing a p-type conductive diamond film layer, and carrying out metal reflection and bonding; s4, removing the substrate and forming an n-type structure: stripping the substrate to be in n-type contact; s5, back-end process integration: preparing an electrode and an optical structure; according to the invention, the heat dissipation performance of the chip is significantly improved; the series resistance is reduced by 30%-50%; the resistivity of the p / n type diamond ohmic contact layer is reduced by 1-2 orders of magnitude compared with ITO; gaAs material light absorption and metal shading are avoided, and the red light transmittance is improved from 75% to more than 90% by combining with the micro lens array; the method is compatible with existing MOCVD, CVD and photoetching processes, large-scale production of wafers of 2-12 inches can be achieved, and the manufacturing cost is reduced.

The invention relates to the technical field of semiconductor material preparation, and provides a method for controlling the resistivity of a fifth main group element doped crystal bar, crystal pulling time is distinguished in different crystal pulling stages, the volatilization coefficient of doped elements in different time periods is adjusted, the volatilization amount of the doped elements in each time interval is calculated more accurately, and the resistivity of the doped crystal bar is controlled. Therefore, the amount of doping elements required for controlling the resistance can be calculated more accurately, the resistance of the crystal bar can be adjusted more effectively and more accurately, the resistance difference between the head and the tail of the single-crystal crystal bar can be better reduced, meanwhile, through timely adjustment of the control process of the grade and the ending volatilization amount, the supplementary doping condition in the crystal pulling process is defined, and the crystal pulling efficiency is improved. And the resistance hit rate of the crystal bar is improved, and the head and tail resistance difference is reduced, so that the resistivity of each part of the crystal bar is accurately controlled, and the consistency of subsequent silicon wafer product quality is ensured.

The invention relates to the field of microelectronic manufacturing, and discloses a high-performance monocrystalline silicon nano wafer manufacturing process which comprises the following steps: preparing a monocrystalline silicon wafer, and obtaining a high-quality monocrystalline silicon wafer through fine cutting, chemical mechanical polishing and surface residual stress elimination treatment; multi-stage cleaning and surface treatment are carried out, and surface pollutants are removed through combination of molecular chromatography, electric field assisted ultrasonic cleaning and low-temperature plasma cleaning; and manufacturing a nano structure, and forming a complex nano structure by adopting multi-stage electron beam lithography, segmented reactive ion etching and self-adaptive deep etching regulation and control. The surface quality, the mechanical strength and the electrical property of the wafer are remarkably improved through the technologies of refined monocrystalline silicon wafer preparation, multi-stage cleaning, advanced nanostructure manufacturing, self-adaptive heat treatment and the like; and through surface functionalization and multi-layer high-precision packaging, the environmental tolerance and long-term reliability of the nanostructure are enhanced.

The invention belongs to the technical field of semiconductors, and particularly relates to a gradient transition composite tantalum carbide coating and a preparation method thereof.The gradient transition composite tantalum carbide coating is located on the surface of a graphite substrate material and sequentially comprises a pyrolytic carbon coating, a tantalum carbide-pyrolytic carbon composite coating and a tantalum carbide coating from inside to outside; wherein the thermal expansion coefficient of the pyrolytic carbon coating is 2.5-4.5 * 10 <-6 > / K, the thermal expansion coefficient of the composite coating is 4.5-6.0 * 10 <-6 > / K, and the thermal expansion coefficient of the tantalum carbide coating is 6.1-8.0 * 10 <-6 > / K. According to the gradient transition structure of the coating, the problem that thermal expansion coefficients between the coating and a base body are not matched is solved, the thermal shock resistance of the coating is effectively improved, meanwhile, the pinning effect can be achieved, the adhesive force between the coatings is enhanced, and the service life of a product is prolonged; compared with a single tantalum carbide coating, crack accumulation and through holes cannot be generated.

The invention relates to a crystal bar axial resistivity control method and device, and the method comprises the steps: predicting the first antimony evaporation capacity of a crystal pulling equal-diameter process in an antimony-phosphorus co-doped single crystal furnace according to the incidence relation between the evaporation constant in the antimony-phosphorus co-doped single crystal furnace and the excess material weight, and controlling the antimony-phosphorus doping ratio of the equal-diameter process according to the first antimony evaporation capacity; according to the incidence relation between the evaporation constant and the lead-discharge duration, the second antimony evaporation capacity in the crystal pulling lead-discharge process in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping proportion in the lead-discharge process is controlled according to the second antimony evaporation capacity; and according to the target re-feeding evaporation calculation model, predicting a third antimony evaporation capacity in a re-feeding stage in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio in the re-feeding stage according to the third antimony evaporation capacity, so that the axial resistivity uniformity of the crystal bar obtained by straight pulling is within a target range. At least the uniformity of axially doped elements in monocrystalline silicon can be improved in the crystal pulling process, and the uniformity of the axial resistivity of a crystal bar is improved.

The invention provides a method for manufacturing a super-flat polycrystalline diamond film on a large scale. The method comprises the following steps: (1) growing a layer of polycrystalline diamond film on a growth substrate with a diamond seed crystal on the surface by adopting a chemical vapor deposition method; (2) cutting off at least one part of the substrate after growth to form a boundary for jointing the polycrystalline diamond film and the growth substrate; (3) sticking a stripping adhesive tape; and (4) the stripping adhesive tape is pulled to strip the polycrystalline diamond film from the surface of the growth substrate, so that the nucleation surface of the polycrystalline diamond film is exposed, and the roughness of the exposed nucleation surface is smaller than that of the growth surface. According to the method, the nucleation surface of the grown polycrystalline diamond film is turned over, the novel and simple method is developed to manufacture the polycrystalline diamond film which is reasonable in price, capable of growing on a large scale, super-flat and transferable, and the method has huge potential in practical application.

The invention discloses a poly-Si film preparation method based on a vertical double-layer hot wire array thermal field design, which changes the surface temperature of a hot wire and the range of a cracking high-temperature region by adjusting the interlayer spacing of a double-layer hot wire array and the current of the double-layer hot wire, expands the cracking time and the cracking space of silane, promotes secondary cracking of the silane, and improves the yield of the poly-Si film. Components and concentration distribution of a silane cracking intermediate product reaching the surface of the substrate can be effectively controlled, and the ratio of SiH / SiH2 active groups is increased; and depositing the poly-Si thin film under the vacuum of 0.5 Pa-5. 0Pa, the substrate temperature of 200-560 DEG C and the deposition time of 10-60 minutes, after deposition is finished, raising the substrate temperature to 200-650 DEG C, and carrying out vacuum annealing on the grown poly-Si thin film to obtain the high-crystallization-rate poly-Si thin film. According to the method, the poly-Si thin film is grown by using a vertical double-layer hot wire array thermal field design, a high-temperature hot wire silane cracking technology and a vacuum annealing technology, and the crystallization quality of the poly-Si thin film can be obviously improved.

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

The invention relates to the field of electronic detectors, and discloses an ultrafast and efficient electronic detector based on nano polycrystalline boron nitride, which comprises a nano polycrystalline boron nitride scintillator, a light guide and a photomultiplier, and is characterized in that the nano polycrystalline boron nitride scintillator and the photomultiplier are respectively connected with the front end and the rear end of the light guide, a nano polycrystalline boron nitride material of the nano polycrystalline boron nitride scintillator is prepared by taking a sapphire single crystal wafer as a substrate, using NH3 and BCl3 or NH3 and BF3 as raw material gases and adopting a chemical vapor deposition furnace for epitaxial growth. In the invention, the nano polycrystalline boron nitride scintillator has short electron decay time and high scintillation light yield, and can realize ultrafast and efficient electron radiation detection when being applied to an electron detector. The electron detector can be applied to secondary electron and backscattered electron detection in an electron beam detection system, and a new choice is provided for the electron beam detection technology.

The invention discloses a ternary magnetic selenide and a preparation method of a single crystal of the ternary magnetic selenide, and relates to the technical field of crystal material preparation. The chemical formula of the ternary magnetic selenide is VCrSe3, and the ternary magnetic selenide can be prepared by taking a vanadium source, a chromium source and a selenium source in a specific proportion as raw materials and an iodine source as a transport agent through a chemical vapor transport method. The crystal structure of the VCrSe3 single crystal is a monoclinic phase (I2 / m), and phase transformation from antiferromagnetic to ferromagnetic and spin reorientation occur at low temperature, so that the VCrSe3 single crystal has application potential in the fields of spintronics, optoelectronics and the like; the large-size and high-quality VCrSe3 single crystal prepared by the method can provide a material for intrinsic physical property research and development of functional devices such as optoelectronic devices and spinning electrons.

Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

The invention provides a preferred orientation single crystal lithium-rich manganese-based positive electrode material, a preparation method thereof and a lithium ion battery, and relates to the technical field of battery positive electrode material preparation. The lithium-rich manganese-based positive electrode material is in a single crystal morphology, and in a diffraction pattern obtained by adopting an XRD (X-Ray Diffraction) instrument taking Cu K alpha as an incident light source, the peak intensity ratio I (003) / I (104) gt of a (003) peak of which 2 theta is positioned at 18.6 + / -0.1 degrees to a (104) peak of which 2 theta is positioned at 44 + / -0.5 degrees; 2. The single crystal lithium-rich manganese-based material with the specific crystal face preferentially growing is prepared, the material preferentially grows along the (003) crystal face by regulating and controlling the synthesis process of the material, the electrochemical performance of the material can be remarkably improved, and especially the stability under the high-rate charging and discharging condition can be remarkably improved.

An epitaxial nitride ferroelectric device and method of operation are provided. The device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a semiconductor layer supported by the substrate and a ferroelectric III-nitride alloy layer supported by the semiconductor layer. The ferroelectric III-nitride alloy layer includes a group IIIB element. The device further includes first and second contacts in electrical communication with the ferroelectric III-nitride ferroelectric alloy layer and the semiconductor layer, respectively. The polarity of a poling voltage applied between the first and second contacts is adapted to establish a state of ferroelectric polarization in the ferroelectric III-nitride alloy layer.

The invention relates to the field of Czochralski single crystal furnace crystal bar production, in particular to a Czochralski single crystal shouldering control system, which comprises a CCD (Charge Coupled Device) information acquisition unit, a computer information storage processing unit and a PLC (Programmable Logic Controller) growth regulation unit, the computer information storage processing unit receives information acquired by the CCD information acquisition unit, then performs cloud data storage processing and outputs single crystal shoulder information of a corresponding time node to the PLC growth regulation unit, and the PLC growth regulation unit performs shouldering cooling amount control, automatic crucible lifting intervention in the shouldering process, automatic intervention control of equal-diameter liquid opening distance and pulling speed control. According to the method, the problems of shouldering line breakage and equal-diameter head line breakage caused by the fact that automatic regulation of the current shouldering pulling speed does not conform to actual growth of crystals are solved, and the consistency of field process parameter management is improved.

In a first aspect, the present disclosure relates to a vapor deposition method of coating a carbonaceous substrate with a tantalum carbide coating, where the method includes a coating step. The coating step includes placing the carbonaceous substrate in a reaction chamber and heating the reaction chamber to a temperature between about 1100 DEG C and about 1500 DEG C for a duration of about 1 hour to about 24 hours. The coating step further includes supplying a process gas to the reaction chamber, where the process gas comprises a halide-containing species, and where the process gas comprises less than 4 atomic% carbon and less than 10 vol% H2 within at least 15 minutes after the start of the process. Further, the coating step includes supplying a tantalum-containing substance to the reaction chamber, or placing a tantalum-containing solid into the reaction chamber. Alternatively, the method includes placing a solid comprising a tantalum halide into the reaction chamber.

This disclosure relates to an intermediate substrate (10) for the fabrication of a semiconductor substrate, comprising successively: a first semiconductor layer (2), a first thermal barrier layer (5), a support (13) comprising an absorption layer (3) configured to absorb laser radiation in a predetermined wavelength range, the temperature of the absorption layer (3) increasing during absorption, and a separation zone (8) adjacent to the absorption layer (3) and configured to thermally degrade under the effect of the temperature increase of the absorption layer, so as to separate at least a portion of the support (13) from the remainder of the intermediate substrate (10). (Shortcut figure: Fig. 1)

The embodiment of the invention provides a Czochralski method crystal growth device and a regulation and control method, and relates to the technical field of crystal growth. The Czochralski method crystal growth device comprises a furnace body, a crucible, a first magnetic field device, a seed rod and a second magnetic field device, the crucible is arranged in the furnace body, and the first magnetic field device is arranged on the outer side of the crucible in a surrounding mode and located in the furnace body. The seed rod is arranged in the furnace body and is spaced from the crucible; the second magnetic field device is arranged on the seed crystal rod and is positioned in the furnace body; wherein the first magnetic field device is used for generating a magnetic field and acting on a melt in the crucible; the second magnetic field device is used for generating a magnetic field and acting on a growth interface of the melt. The Czochralski method crystal growth device can effectively inhibit convection of melt, so that solute distribution is uniform, and crystal defects are reduced; and the crystal structure can be optimized, and accurate regulation and control of solute are realized, so that the quality and the performance of the crystal are integrally improved.

The invention provides silicon carbide epitaxial growth equipment and a silicon carbide epitaxial growth method. According to the growth equipment, a gas supply system comprises a first flow control module and a second flow control module which are respectively connected with a control module; the epitaxial growth module comprises a shell, the top of the shell is provided with a spraying device, the spraying device comprises a first gas supply area and a second gas supply area surrounding the first gas supply area, the first gas supply area and the second gas supply area respectively comprise a plurality of ventilation holes, and the first gas supply area and the second gas supply area are respectively connected to a gas supply system through pipelines. Based on the first flow control module and the second flow control module, the gas amount / or the carbon-silicon ratio of the matched and corresponding first gas supply area / second gas supply area is controlled, and the bottom side in the shell is provided with a bearing disc which is used for placing a substrate and is arranged opposite to the spraying device. The spraying device is partitioned, and the amount of gas introduced into the air holes of each region can be controlled to improve the N doping concentration uniformity of the epitaxial layer of epitaxial growth of silicon carbide.