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47593 results about "Silicon" patented technology
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Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard and brittle crystalline solid with a blue-grey metallic lustre; and it is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, and lead are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its melting and boiling points of 1414 °C and 3265 °C respectively are the second-highest among all the metalloids and nonmetals, being only surpassed by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is most widely distributed in dusts, sands, planetoids, and planets as various forms of silicon dioxide (silica) or silicates. More than 90% of the Earth's crust is composed of silicate minerals, making silicon the second most abundant element in the Earth's crust (about 28% by mass) after oxygen.
High-electron mobility transistor with zinc oxide
InactiveUS7105868B2Increase heightSemiconductor/solid-state device manufacturingSemiconductor devicesSchottky barrierField-effect transistor
A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride/aluminum gallium nitride (AlN/AlGaN) or magnesium zinc oxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a silicon metal oxide semiconductor field effect transistor (Si-MOS-type FET), resulting in the formation of an inversion layer.
Owner:NAUSE CATHERINE D
Vertically stacked field programmable nonvolatile memory and method of fabrication
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
Owner:RHOMBUS
Vertically stacked field programmable nonvolatile memory and method of fabrication
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
Owner:SANDISK TECH LLC
Enhancement of remote plasma source clean for dielectric films
Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
Owner:APPLIED MATERIALS INC
High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
InactiveUS20060093756A1Liquid surface applicatorsSemiconductor/solid-state device manufacturingDielectricCleaning methods
A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.
Owner:APPLIED MATERIALS INC
METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD
ActiveUS20110086516A1High conformalityIncrease deposition rateSemiconductor/solid-state device manufacturingChemical vapor deposition coatingDielectricNoble gas
A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
Owner:ASM JAPAN
Remote plasma source seasoning
ActiveUS20110045676A1Increase deposition rateReduce defectsElectric discharge tubesSemiconductor/solid-state device manufacturingRemote plasmaDeposition process
Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
Owner:APPLIED MATERIALS INC
Activated Chemical Process for Enhancing Material Properties of Dielectric Films
ActiveUS20080199977A1High dielectric constantLow dielectric constantSemiconductor/solid-state device manufacturingFluid pressure measurement by mechanical elementsDielectric layerElectron
A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.
Owner:VERSUM MATERIALS US LLC
Atomic layer deposition of high k metal silicates
InactiveUS20060228888A1Reduce carbon pollutionReduce stepsSolid-state devicesSemiconductor/solid-state device manufacturingHafniumAtomic layer deposition
The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
Owner:AVIZA TECHNOLOGY INC +1
Precursors for CVD silicon carbo-nitride films
ActiveUS20060258173A1Easy to moveGroup 4/14 element organic compoundsSemiconductor/solid-state device manufacturingSilanesRoom temperature
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.
The classes of compounds are generally represented by the formulas:
- and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
Owner:VERSUM MATERIALS US LLC
Method for Forming Single-Phase Multi-Element Film by PEALD
ActiveUS20130084714A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingReaction zoneGas plasma
A method for forming a single-phase multi-element film on a substrate in a reaction zone by PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing a precursor on the substrate in the absence of reactant and plasma; decomposing the precursor adsorbed on the substrate by an inert gas plasma; and reacting the decomposed precursor with a reactant gas plasma in the presence of the inert gas plasma. The multi-element film contains silicon and at least two non-metal elements constituting a matrix of the film, the precursor contains silicon and optionally at least one non-metal element to be incorporated in the matrix, and the reactant gas contains at least one non-metal element to be incorporated in the matrix.
Owner:ASM JAPAN
Organoaminodisilane precursors and methods for depositing films comprising same
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I:
wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.
Owner:VERSUM MATERIALS US LLC
Electroluminescent device
ActiveUS20070087219A1Increase brightnessReduce the driving voltageDischarge tube luminescnet screensElectroluminescent light sourcesCompound (substance)Triplet state
An OLED device comprises a cathode and an anode and has located therebetween a light-emitting layer comprising a phosphorescent light-emitting material and a host comprising a compound of a tetravalent atom wherein the four groups bonded to the atom are aromatic rings, at least one of which contains an electron-withdrawing group (EWG) substituent comprising at least three atoms, the compound having a triplet energy of at least 2.7 eV and a LUMO energy within 0.6 eV of the LUMO energy of at least one material in an adjacent layer on the cathode side of the light-emitting layer. Particular embodiments include certain tetravalent silicon compounds. The light-emitting layer emits blue light and provides good luminance and reduced drive voltage.
Owner:GLOBAL OLED TECH
Multilayered material and method of producing the same
InactiveUS20120107607A1Reduce the impactIncrease production capacityRadiation applicationsPretreated surfacesWater vaporPolysilazane
A multilayered material is provided which includes a substrate and a silicon-containing film formed on the substrate, wherein the silicon-containing film has a nitrogen-rich area including silicon atoms and nitrogen atoms, or silicon atoms, nitrogen atoms, and an oxygen atoms and the nitrogen-rich area is formed by irradiating a polysilazane film formed on the substrate with an energy beam in an atmosphere not substantially including oxygen or water vapor and denaturing at least a part of the polysilazane film. A method of producing the multilayered material is also provided.
Owner:MITSUI CHEM INC
Method of manufacturing semiconductor device
InactiveUS20070066010A1Good step coverageReduce leakage levelTransistorSolid-state devicesDevice materialEvaporation
The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.
Owner:SONY CORP
Multigate semiconductor device with vertical channel current and method of fabrication
The present invention is a multibit nonvolatile memory and its method of fabrication. According to the present invention a silicon channel body having a first and second channel surface is formed. A charge storage medium is formed adjacent to the first channel surface and a second charge storage medium is formed adjacent to the second channel surface. A first control gate is formed adjacent to the first charge storage medium adjacent to the first channel surface and a second control gate is formed adjacent to the second charge storage medium adjacent to the second surface.
Owner:SANDISK TECH LLC
Method for forming dielectric film in trenches by PEALD using H-containing gas
ActiveUS9455138B1Increase deposition rateHigh film thicknessSemiconductor/solid-state device manufacturingChemical physicsNoble gas
A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.
Owner:ASM IP HLDG BV
Method for Forming Conformal Nitrided, Oxidized, or Carbonized Dielectric Film by Atomic Layer Deposition
ActiveUS20150147483A1Easy to oxidizeEasily and nitridedSpecial surfacesChemical vapor deposition coatingAtomic layer depositionSilicon
A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.
Owner:ASM IP HLDG BV
LOW TEMPERATURE ALD SiO2
InactiveUS20080113097A1Reduce interactionSemiconductor/solid-state device manufacturingChemical vapor deposition coatingPyridineSilicon dioxide
The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
Owner:APPLIED MATERIALS INC
Implantable continuous intraocular pressure sensor
InactiveUS6939299B1Worn safely and comfortably and convenientlyPerson identificationTonometersIntraocular pressureSpiral inductor
An implantable miniaturized pressure sensor integrates a capacitor and an inductor in one small chip, forming a resonant LC circuit having a Q value of 10 or greater. The capacitor has an upper capacitor plate and a lower capacitor plate disposed proximate thereof. The upper and lower capacitor plates are connected to one or more spiral inductor coils. The sensor is micromachined from silicon to form a thin and robust membrane disposed on top of the upper capacitor plate. The sensor is hermetically sealed and the membrane is deflected relative to the upper capacitor plate by an external fluid, gas, or mechanical pressure. The resonant frequency of the sensor can be remotely monitored and continuously measured with an external detector pick up coil disposed proximate the sensor. The sensor can be smaller than 2×2×0.5 mm and is particularly useful for intraocular applications.
Owner:IOSENSOR
Sequential gas flow oxide deposition technique
InactiveUS20050019494A1High aspect ratioGood effectVacuum evaporation coatingSputtering coatingOxygenSilicon dioxide
A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
Owner:APPLIED MATERIALS INC
Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.
Owner:MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN EV
Method of depositing catalyst assisted silicates of high-k materials
InactiveUS20080113096A1Reduce the temperatureSilicon organic compoundsChemical vapor deposition coatingSoaking ProcedureHafnium
A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and/or at a low temperature.
Owner:APPLIED MATERIALS INC
Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:
wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
Owner:VERSUM MATERIALS US LLC
Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
InactiveUS20130217241A1Excellent etch resistanceFilm property decreaseSemiconductor/solid-state device manufacturingNitrogenSemiconductor
Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
Owner:APPLIED MATERIALS INC
Process for forming cobalt and cobalt silicide materials in copper contact applications
InactiveUS20080268635A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingElectroless depositionCopper
Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.
Owner:APPLIED MATERIALS INC
Flowable silicon-and-carbon-containing layers for semiconductor processing
InactiveUS20130217239A1Decreases beneficially low wet etch rateReduce hydrogen contentSemiconductor/solid-state device manufacturingCarbon layerHydrogen
Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H3Si—CH2—SiH2—CH2—SiH3) as the silicon-and-carbon-containing precursor and hydrogen (H2) as the hydrogen-containing precursor. The hydrogen-containing precursor may also be a hydrocarbon, such as acetylene (C2H2) or ethylene (C2H4). The hydrogen-containing precursor is passed through a remote plasma region to form plasma effluents (the radical hydrogen precursor) which are flowed into the substrate processing region. When the silicon-and-carbon-containing precursor combines with the plasma effluents in the substrate processing region, they form a flowable silicon-carbon-and-hydrogen-containing layer on the semiconductor substrate.
Owner:APPLIED MATERIALS INC
Component for semicondutor processing apparatus and manufacturing method thereof
InactiveUS20090194233A1Liquid surface applicatorsSemiconductor/solid-state device manufacturingTectorial membranePorosity
A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.
Owner:TOKYO ELECTRON LTD
Phosphorus Containing Si Epitaxial Layers in N-Type Source/Drain Junctions
ActiveUS20080182075A1Keep the pressureLayered productsSemiconductor/solid-state device manufacturingMOSFETHigh concentration
Methods for formation of epitaxial layers containing n-doped silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source. An epitaxial layer may have considerable tensile stress which may be created in a significant amount by a high concentration of n-dopant. A layer having n-dopant may also have substitutional carbon. Phosphorus as an n-dopant with a high concentration is provided. A substrate having an epitaxial layer with a high level of n-dopant is also disclosed.
Owner:APPLIED MATERIALS INC
Heat treatment jig for silicon semiconductor substrate
ActiveUS20050282101A1Reduce generationDiminish surface stepCharge supportsSemiconductor/solid-state device manufacturingSurface roughnessSemiconductor
A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.
Owner:SUMITOMO MITSUBISHI SILICON CORP
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