19993 results about "Silicon" patented technology

The invention relates to the technical field of light emitting devices, and discloses a control method for a silicon light integrated multi-wavelength light emitting device, and the method comprises the steps: carrying out the grating coupling processing and polarization state separation processing of a plurality of wavelength channels of the silicon light integrated multi-wavelength light emitting device, and obtaining an initial optical characteristic data set; performing temperature response characteristic analysis to obtain a temperature field characteristic parameter set; performing spectral characteristic analysis on the plurality of wavelength channels to obtain wavelength channel characteristic vectors; a wavelength drift coefficient matrix and a refractive index change coefficient matrix are calculated, and a multi-wavelength linkage control data model is generated; according to the method, a hierarchical control structure comprising a quick response layer, a temperature compensation layer and a polarization optimization layer is constructed, multi-wavelength cooperative control operation is executed, and a steady-state control parameter set is output, so that the wavelength stability control precision and the temperature control precision are improved, the adaptive capacity to disturbance of different time scales is enhanced, and the stability of the system is improved. And stable operation under complex working conditions is ensured.

The invention is applicable to the field of photovoltaic technology, and provides a back contact solar cell, which comprises a silicon substrate, non-recessed areas and recessed areas are alternately arranged on the backlight surface of the silicon substrate, and the silicon substrate is provided with extending parts extending and protruding to the upper parts of the recessed areas at the edges of the non-recessed areas and the recessed areas; the first dielectric layer and the first polarity doping layer are sequentially stacked on the non-sunken region and the extension part; the second dielectric layer comprises a first part stacked on the first polarity doping layer and a second part stacked in the sunken region; the second polarity doped layer is stacked on the first portion and the second portion. Under the shielding effect of the extension part, the first polarity doping layer in the non-recessed area is effectively isolated from the second polarity doping layer in the recessed area, and electric leakage is avoided.

The invention discloses a method of preparing aluminum oxide-silicon carbide compound porous ceramic by aluminum-silicon industrial waste residues. The primary raw materials comprise industrial waste residues, carbon powder, a pore forming substance and an adhesive. The aluminum oxide-silicon carbide compound porous ceramic is prepared by the following steps of mixing, drying, forming and sintering to obtain a final product. Treatment and high additional value utilization of the industrial waste residues are achieved. The prepared porous ceramic is remarkable in performance, and can be applied to the fields of filtration, sound isolation, heat isolation, fire fighting and the like. The method is simple in process flow and convenient for industrialized promotion; and the cost is good to control and the method has extreme economical value.

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and aims to perform field passivation on a first region and an overlapping region through a doping layer, and the doping layer can form a favorable electric field consistent with the induction direction of a first doped silicon layer so as to improve the collection efficiency of the first doped silicon layer on current carriers. The back contact cell includes a semiconductor substrate, a tunneling passivation layer, a first doped silicon layer, an intrinsic silicon layer, a second doped silicon layer, and a doped layer. The tunneling passivation layer and the first doped silicon layer are sequentially arranged on the first region and the overlapping region in a stacked mode. The intrinsic silicon layer and the second doped silicon layer are sequentially arranged on the second area in a stacked mode and further extend to cover the tunneling passivation layer and the first doped silicon layer which are located in the overlapping area. The doped layer is disposed within the first region and the overlapping region of the semiconductor substrate. And the doping concentration of a first doping element with the same conduction type as that of the first doping silicon layer in the doping layer is greater than that of the first doping element in the second region of the semiconductor substrate.

The invention relates to a zirconia-based all-ceramic false tooth and a preparation method thereof. A core layer of the zirconia-based all-ceramic false tooth is prepared from the following components in parts by mass: 90 to 94 parts of ZrO2, 5 to 9 parts of Y2O3, 0.1 to 0.5 part of Al2O3, 0.01 to 0.5 part of Fe2O3, 0.01 to 0.5 part of Er2O3 and 0 to 0.2 part of MnO2, and a shell layer of the zirconia-based all-ceramic false tooth is prepared from the following components in parts by mass: 24.5 to 49.5 parts of CaCO3, 45 to 50 parts of SiO2, 0 to 25 parts of MgO, 0.01 to 0.5 part of Fe2O3, 0.01 to 0.5 part of Er2O3 and 0 to 0.2 part of MnO2. The preparation process comprises the following steps: performing dry pressing and isostatic pressing on raw materials of the core layer, presintering, and carving to obtain a zirconia-based false tooth biscuit; meanwhile, calcining raw materials of a shell layer, then adding deionized water, a dispersing agent and an adhesive, and carrying out ball milling and mixing to obtain calcium-magnesium-silicon-based ceramic slurry; and coating the calcium-magnesium-silicon-based ceramic slurry on the surface of the zirconium oxide-based false tooth biscuit, and sintering to obtain the zirconium oxide-based all-ceramic false tooth provided by the invention. The zirconia-based all-ceramic false tooth has good jade texture and is closer to the natural color of natural teeth.

The invention discloses a back contact solar cell, an assembly and a system. The back contact solar cell comprises a silicon substrate, the back surface of the silicon substrate comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged at intervals, and each of the first areas and the second areas comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area of the first area comprises a first passivation layer, a selective transmission layer and a first metal electrode which are sequentially stacked on the surface of the silicon substrate from inside to outside. According to the back contact solar cell, the passivation layer and the selective transmission layer are arranged in the first region and combined with the passivation anti-reflection layer, the excellent passivation contact effect is achieved, a narrow-band-gap highly-doped silicon material does not need to be used, the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and then the performance of the back contact solar cell is improved.

Molybdenum-containing films are deposited on semiconductor substrates at relatively low temperatures of between about 100 and about 500° C., such as between about 200 and about 450° C. For example, molybdenum metal can be deposited at this temperature on a substrate having exposed metal and exposed dielectric in a substantially non-selective manner. In one implementation, a substrate having a recessed feature is provided, where the recessed feature has an exposed dielectric on the sidewalls and an exposed metal on the bottom. The substrate is exposed to a molybdenum-containing precursor, a reducing agent, and a silicon-containing reagent, to thereby reduce the molybdenum-containing precursor and form a molybdenum-containing layer that includes metallic molybdenum. The use of the silicon-containing reactant leads to a reduction in on-metal / on-dielectric selectivity of molybdenum deposition.

The invention provides a solar cell, which comprises a silicon substrate having a backlight surface and a light facing surface which are opposite, the backlight surface comprises first areas and second areas which are alternately arranged, the first areas of the backlight surface are provided with first pyramid structures, the light facing surface is provided with second pyramid structures, the first pyramid structures are provided with first passivation contact layers, and the second pyramid structures are provided with second passivation contact layers; the first pyramid structure is provided with a first passivation contact layer, the reflectivity of the first area is 5%-14%, the second pyramid structure is provided with a passivation antireflection layer, the reflectivity of the light facing face is 5%-14%, the second area is provided with a second passivation contact layer, the reflectivity of the second area is 25%-50%, and the ratio of the area of the first area to the total area of the backlight face is 40%-70%. The light trapping effect of the light-facing surface is further improved by setting different shapes in different areas of the light-facing surface and the backlight surface, and the passivation effect and the carrier transport effect of the surface of the back pyramid structure are balanced while the light trapping effect of the backlight surface is improved; the photoelectric conversion efficiency and the double-sided rate of the solar cell are improved; and the appearance color difference of the receiving surface is improved.

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and is used for preventing a first doped silicon layer and a second doped silicon layer which are opposite in conduction type in the back contact cell from being conducted on the side face of a silicon substrate, restraining side face electric leakage and improving the conversion efficiency of the back contact cell. The back contact cell comprises a silicon substrate, a first doped silicon layer, a surface passivation layer, an antireflection layer, an intrinsic silicon layer, a second doped silicon layer and a transparent conductive layer. The silicon substrate comprises a first surface and a second surface which are oppositely arranged, and a side surface connecting the first surface and the second surface. The first doped silicon layer, the surface passivation layer, the antireflection layer, the intrinsic silicon layer, the second doped silicon layer and the transparent conductive layer are sequentially arranged on the side face in the direction away from the side face. The first doped silicon layer and the second doped silicon layer are opposite in conductive type. In the thickness direction of the silicon substrate, the surface passivation layer and the antireflection layer are further sequentially arranged on the second face, and the surface passivation layer and the antireflection layer extend from the second face to the side face.

The invention discloses a carbon-silicon negative electrode material and a preparation method and application thereof, and the preparation method comprises the following steps: S1, carrying out mixed reaction on a lithium source compound, a lanthanum source compound and a titanium source compound to obtain a mixed reactant; mixing the mixed reactant with a carbon source compound, and dispersing and emulsifying to obtain element-doped microspheres; s2, carbonizing the element-doped microspheres in the step S1 to obtain carbides, and activating the carbides to obtain a porous carbon material; and S3, performing silicon deposition on the porous carbon material in the S2 to obtain silicon deposition porous carbon, and performing carbon deposition on the silicon deposition porous carbon to obtain the carbon-silicon negative electrode material. The carbon-silicon negative electrode material disclosed by the invention is high in lithium ion transmission rate, the problem of poor electronic conductivity of silicon is solved, and the electrical property of a battery can be effectively improved.

The invention belongs to the technical field of soft magnetic materials, and discloses an amorphous nanocrystalline soft magnetic material with high saturation flux density and a preparation method thereof. The preparation method comprises the following steps that an iron-based amorphous strip is crushed into flat powder with the thickness being 5-25 microns and the diameter being 30-80 microns, and scaly amorphous soft magnetic powder is obtained; the method comprises the following steps: performing insulation coating treatment on spherical iron-silicon soft magnetic powder with the average particle size of 2-20 microns to obtain insulation coating modified spherical magnetic powder; and mixing the obtained scaly amorphous soft magnetic powder, the insulating coated modified spherical magnetic powder and bonding resin, performing compression molding, performing annealing crystallization treatment at the temperature of 450-550 DEG C, and then raising the temperature to 600-900 DEG C for sintering treatment to obtain a finished product. According to the amorphous nanocrystalline soft magnetic material and the preparation method thereof, the spherical iron-silicon soft magnetic powder modified through insulation coating is compounded with the scaly amorphous soft magnetic powder, and low loss is maintained while the obtained amorphous nanocrystalline soft magnetic material Bs is remarkably improved.

Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A plurality of nanosheet recesses are formed within a substrate. A placeholder structure is formed on a bottom surface within each nanosheet recess. A first source / drain region is formed within a first nanosheet recess. A second source / drain region is formed within the second nanosheet recess. The semiconductor structure is flipped. The substrate is removed respective to a sidewall spacer of the placeholder structure and a first etch stop layer of the placeholder structure. Backside interlayer dielectric is formed. A backside contact trench to the second source drain region is formed by removing a portion of the backside interlayer dielectric over the second source / drain region and removing exposed portions of the first etch stop layer, the sidewall spacer, and a silicon buffer layer of the placeholder structure. A backside contact is formed within the trench.

A busbar-free electrode structure, IBC solar cell, and a photovoltaic system, used in the technical field of solar cells. Since first end welding points close to a third edge and disposed at a first break position are not connected to a first fine grid, but are electrically connected to a part of a second fine grid closest to the third edge, second fine grids close to a first edge can be connected together. On this basis, the first end welding points can be disposed, by means of the described electric connection manner, at a positions distant from the first edge of the silicon substrate, so that when a welding strip is subsequently welded to a first end welding point, because there is a relatively large distance between a disposed first end welding point and the first edge, the risk of hidden cracks during welding can be reduced, the cell yield can be improved, and overall convergence of the second fine grid can be achieved.

Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer include a glass former and a glass modifier. The boron-glass layer includes a boron compound comprising a mixture of boron carbide (B4C) powder and cubic boron nitride (BN) powder.

The invention relates to a D2NNs-based terahertz phased array device and an implementation method thereof. The phased array device comprises an active modulation layer and a two-layer metasurface layer structure. The active modulation layer mainly comprises a patterned micro-nano metal electrode and an active functional material, and the optical property of the active functional material is adjusted through external voltage, so that light beam output with specific phase distribution is realized in a terahertz wave band. The metasurface layers are composed of silicon column structure arrays located on the surface of the substrate, the two metasurface layers can finely control complex electric field distribution of a specific diffraction plane, and an optical diffraction neural network architecture is constructed. The phase distribution of the metasurface layer is optimized by using gradient descent and back propagation algorithms in the neural network for each required regulation and control mode, and active regulation and control in a specific light beam direction can be realized under the driving of different voltages. According to the invention, the problems of the terahertz phased array technology in the aspects of regulation and control precision, continuity and the like are solved, and a more efficient and flexible beam regulation and control method is provided.

The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate, the semiconductor substrate is provided with a light receiving surface and a backlight surface which are oppositely arranged, and the backlight surface of the semiconductor substrate is provided with a first area and a second area; a tunneling dielectric layer and a first doping layer, wherein the tunneling dielectric layer and the first doping layer are sequentially stacked on the first region; the intrinsic passivation layer and the second doping layer are sequentially arranged on the second area in a stacked mode, the intrinsic passivation layer is made of intrinsic silicon, and the doping type of the second doping layer is opposite to that of the first doping layer; and the oxidation isolation layer is arranged between the first doping layer and the second doping layer and is used for isolating the first doping layer from the second doping layer in an insulating manner. The problem of electric leakage can be improved.

The invention is suitable for the technical field of solar cells, and provides a back contact solar cell, a cell assembly and a photovoltaic system, and the solar cell comprises a silicon substrate, the backlight surface of which is provided with a first region and a second region; the first passivation layer is arranged in the first region; the first doping layer is arranged on one surface, deviating from the silicon substrate, of the first passivation layer; the second passivation layer is arranged in the second region; the second doping layer is arranged on one surface, deviating from the silicon substrate, of the second passivation layer; at a preset position, an electric leakage contact layer is arranged in at least partial region between the first doping layer and the second doping layer, the electric leakage contact layer is connected with the first doping layer and the second doping layer, the thickness of the electric leakage contact layer is greater than that of the second passivation layer, and the ratio of the thickness of the electric leakage contact layer to the thickness of the second passivation layer is less than 4. According to the back contact solar cell, hot spot effect management and control can be achieved, normal power generation under a certain weak light condition is not affected, and hot spot effect management and control and power generation capacity of the back contact solar cell can be well balanced.

The invention discloses thin-gauge non-oriented silicon steel and a production method thereof, and a motor iron core and a manufacturing method thereof. The production method comprises the following steps: heating a steel billet to 1080-1120 DEG C, preserving heat for 150-200 minutes, performing rough rolling to obtain an intermediate billet of 35-45 mm, performing finish rolling, and coiling to obtain a hot-rolled coiled plate of 2.30-3.00 mm; the initial rolling temperature of finish rolling is 970 + / -20 DEG C, the final rolling temperature is 850 + / -20 DEG C, the reduction rate is 92% or above, and the coiling temperature is 700 + / -20 DEG C; acid pickling and cold rolling are carried out under the condition that normalizing is not carried out, and cold-rolled strip steel with the thickness ranging from 0.15 mm to 0.35 mm is obtained; the total reduction rate of cold rolling is greater than or equal to 86%; performing primary annealing, cooling and coating to obtain a steel plate finished product; the annealing temperature is 830-870 DEG C, and the temperature is kept for 60-90 seconds. Therefore, the same piece of non-oriented silicon steel can meet the requirements of the stator and rotor iron cores at the same time, the manufacturing cost of the stator and rotor iron cores is low, and material waste is avoided.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell comprises a silicon substrate, a functional layer and an electrode structure, the plurality of contact electrodes are oligomerized in a first direction and a second direction which are perpendicular to each other to form a contact electrode group; at least one contact electrode group is composed of a plurality of parts in the second direction; at least one part in the second direction comprises at least two contact electrodes; in the first direction, the sum of the sizes of all the contact electrodes of at least one part and the intervals between the contact electrodes is M; the total number of the contact electrodes of at least one part is n; in the second direction, the distance between the center of the first contact electrode of the at least one part and the center of the tail contact electrode in the at least one part is Hn; (1 / (2n)) * Hn < = M. Electric connection of the transmission electrode and the contact electrode can be ensured, a process window is enlarged, and enough offset space is provided in the transmission electrode setting process.

The invention discloses a light-operated reconfigurable metasurface for full-space terahertz wave beam regulation and control, solves the problem of how to provide ubiquitous full-space wave beam coverage for multi-user wireless communication application, and belongs to the field of artificial electromagnetic metamaterials. The super subunit comprises N super subunits which are arranged periodically, each super subunit comprises 4 * 4 identical coding units, corresponding codes are '0' and '1' respectively when illumination exists or not, and the phase response difference of the two coding units at 0.7 THz is 180 degrees. Each super subunit comprises five layers, the third layer is used for switching between reflection and transmission, when vanadium dioxide is in a medium state, the super surface is in a transmission mode, and when vanadium dioxide is in a metal state, the super surface is in a reflection mode. The first layer, the second layer, the fourth layer and the fifth layer are used for controlling the amplitude and the phase of the total-space terahertz wave, the conductivity of the photosensitive silicon pattern is changed under excitation of light with different intensities, the phase of the total-space terahertz wave beam is effectively modulated, and one-bit terahertz information coding is achieved.

The invention belongs to the technical field of non-oriented electrical steel manufacturing, and relates to a method for producing non-oriented silicon steel based on thin-strip cast rolling. The low-silicon and aluminum-free component design is adopted, the hot-rolled thin substrate is directly obtained through thin strip cast rolling, casting blank continuous casting and casting blank heating are omitted, the hot rolling reduction is greatly reduced, it is avoided that unfavorable textures of alpha and gamma components in the finished non-oriented silicon steel are remarkably improved, and the high magnetic induction of the finished product is guaranteed; after acid pickling and cold rolling, grain growth is promoted by means of high-temperature cover annealing, and low iron loss of a finished product is guaranteed; the high-magnetic-induction low-iron-loss non-oriented silicon steel with the thickness specification of 0.50 mm is obtained, the grain size of a finished product is 80-100 microns, the iron loss P1.5 / 50 is smaller than or equal to 4.0 W / kg, and the magnetic induction B5000 is larger than or equal to 1.76 T.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, so as to improve the photoelectric conversion efficiency of the solar cell comprising a fragmented cell, greatly reduce the mechanical damage of the fragmented cell, greatly reduce the hidden crack possibility of a photovoltaic module comprising the fragmented cell, and improve the production efficiency of the photovoltaic module. And the product yield is further improved. The preparation method of the solar cell comprises the following steps: providing a whole solar cell; a first laser device is adopted to form positioning grooves in the two ends of the to-be-segmented area respectively; a second laser device is adopted to heat the to-be-segmented area from the positioning groove until the other positioning groove is finished; spraying cooling liquid to the heated to-be-segmented area by adopting a spraying device, so that the whole solar cell is cracked in the to-be-segmented area along the first direction to form at least two segmented cells; the cooling liquid comprises oxidizing substances, and the cross section is a surface hydroxylated silicon surface; and forming a passivation layer on the fracture surface.

The invention provides a waste glass activity rapid comprehensive evaluation method based on dissolution kinetics analysis. According to the method, the silicon ion dissolution characteristic of the waste glass in an alkaline environment is measured, the particle size effect and kinetic parameter analysis are combined, the corresponding relation with the 28-day compressive strength activity index is established, and rapid evaluation of the activity of the waste glass is achieved. The method comprises the steps of dissolution test, kinetic analysis and activity evaluation. Research finds that a power function relationship exists between the reaction rate constant and the particle size, and good linear correlation exists between the dissolution characteristic and the activity index. According to the invention, a complete evaluation system of particle size-reaction rate-activity index is established, the goal of predicting the 28-day activity index from the 24-hour dissolution characteristic is realized, and the error between the prediction result and the measured value is less than 2%. The method is short in evaluation period and accurate and reliable in result, and has important engineering application value.

The invention relates to the technical field of back contact cells, and particularly discloses a back contact cell and a preparation method thereof, and a photovoltaic system, the back contact cell comprises a silicon substrate, and the backlight surface of the silicon substrate is provided with a plurality of first areas and second areas which are alternately arranged; the first semiconductor composite layer is arranged in the first region and comprises a tunneling passivation layer and a first doping layer which are sequentially arranged in the direction away from the silicon substrate; the second semiconductor composite layer is at least partially arranged in the second area and comprises a passivation contact layer and a second doping layer which are sequentially arranged in the direction away from the silicon substrate, and the polarity of the second doping layer is opposite to that of the first doping layer; the composite TCO layer is arranged in at least partial areas of the sides, back to the silicon substrate, of the first doping layer and the second doping layer, the composite TCO layer comprises a first TCO layer and a second TCO layer which are sequentially arranged in the direction away from the silicon substrate, a plurality of holes are distributed in the first TCO layer, and the holes are provided with openings at least in the side, away from the second TCO layer, of the first TCO layer. According to the back contact battery structure, the back reflection effect on light can be effectively improved, the light utilization rate is improved, and then the battery conversion efficiency is improved.

The invention relates to a preparation method and application of an organosilicon / MOF-303 mixed matrix membrane, a silicon source precursor is uniformly dissolved in an ethanol solvent, then a mixture of water and hydrochloric acid is added according to a certain proportion, a water bath heating reaction is carried out for a period of time to obtain an organosilicon sol, prepared MOF-303 powder is added into the organosilicon sol according to a certain proportion, and the organosilicon / MOF-303 mixed matrix membrane is obtained. The preparation method comprises the following steps: uniformly mixing the raw materials through ultrasound to obtain a separation layer sol, coating the prepared separation layer sol on a ceramic support body through a hot coating method, and calcining in an air atmosphere for a period of time to obtain the MOF-303 / mixed matrix membrane. An organic silicon substance BTESA with a rigid acetylene bridge structure is preferably selected as a precursor, an MOF-303 material with a high specific surface area is doped into the precursor, the pore channel structure of the membrane is modified, more adsorption sites are provided for water molecules, and the composite membrane material with the optimal separation performance is obtained by optimizing the composite proportion.

The back contact solar cell comprises a silicon substrate, a first passivation layer, a protection layer, a first electrode and a second electrode, the silicon substrate is provided with a first surface and a second surface which are opposite to each other, and one side of the second surface of the silicon substrate is provided with a P-type conductive region and an N-type conductive region which are arranged at intervals; the first passivation layer is arranged on the first surface of the silicon substrate, the protection layer is arranged on the side, away from the silicon substrate, of the first passivation layer, the first electrode is electrically connected with the P-type conductive region, and the second electrode is electrically connected with the N-type conductive region. The protection layer can prevent other stacked back contact solar cells or other objects from making contact with the surface of the first passivation layer, and the surface of the first passivation layer is prevented from being scratched or damaged by other objects, so that the passivation effect of the first passivation layer on the first surface is guaranteed, and the photoelectric conversion efficiency of the back contact solar cells is improved. In addition, due to the arrangement of the protective layer, the surface of the first passivation layer can still be well protected when the multiple back contact solar cells are stacked irregularly, and an isolation part does not need to be additionally arranged between every two adjacent back contact solar cells in the sorting and collecting process. The sorting and collecting efficiency of a plurality of back contact solar cells can be improved, the structure is simple, preparation is convenient, and the preparation cost is saved.

The invention discloses a self-assembly material, a solar cell and electric equipment, the self-assembly material comprises a first self-assembly molecular material, the structural formula of the first self-assembly molecular material is # imgabs0 #, Ar represents an aryl group, the Ar comprises at least one coordination atom, the coordination atom comprises lone pair electrons which are not bonded, and the first self-assembly molecular material comprises a second self-assembly molecular material, a third self-assembly molecular material and a fourth self-assembly molecular material, the coordination atoms comprise one or more of phosphorus atoms, arsenic atoms, sulfur atoms and selenium atoms; l comprises one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group and a sulfur-containing group, and n is 0-10; a comprises a hydrophilic group. When the self-assembly material is used for passivating the light absorption layer of the solar cell, a better passivation effect can be realized, and the photoelectric conversion efficiency and the stability of the solar cell can be improved.

The invention relates to the technical field of multi-sensor fusion, in particular to a detection method and system for silicon steel magnesium oxide adhesiveness. Particulate matter matching analysis is carried out based on the corresponding magnesium oxide coating particle condition and the silicon steel surface condition; the particle bonding effect is evaluated based on the particle matching analysis result and the fluidity condition of the coating in the scene, and the magnesium oxide adhesion quality is predicted based on the evaluation result of the particle bonding effect and the shaking condition of the equipment in the coating process. The characteristics of the coating, the surface condition of the silicon steel, the coating environment, dynamic factors in the coating process and the like are comprehensively considered, the adhesiveness of magnesium oxide is evaluated and analyzed from multiple dimensions, and the multi-dimensional analysis method provides a more scientific and more accurate evaluation means for the silicon steel coating technology.

The invention discloses a porous carbon and silicon carbon material as well as a preparation method and application thereof. The pore structure of the porous carbon comprises mesopores and micropores; in the pore structure, the pore volume ratio of mesopores is 3-20%, and the pore volume ratio of micropores is 80-97%; the adsorption and desorption isotherm of the mesopores is one or more of an H1 type hysteresis loop, an H2 type hysteresis loop and an H3 type hysteresis loop; the pore structure is filled with carbon particles, and the carbon particles are spherical carbon particles or fusiform carbon particles. By regulating and controlling the pore structure of the porous carbon, the performance of the silicon-carbon negative electrode is remarkably improved, and the double advantages of high strength and low expansion are achieved. The preparation method disclosed by the invention has obvious advantages in the aspects of cost, time and safety.

A double cold rolled non-oriented electrical steel sheet having a composition including: 0.0001%≤Carbon≤0.007%, 0.1%≤Manganese≤0.2%, 3.1%≤Silicon≤3.6%, 0.8%≤Aluminum≤1.1%, Phosphorus≤0.15%, Sulfur≤0.006%, Nitrogen≤0.09%, and can contain various optional elements. The remainder composition being iron and unavoidable impurities caused by processing, the microstructure is made of ferrite and has in area fraction, 80% to 100% recrystallized microstructure, 0% to 20% non-recrystallized microstructure wherein the average grain size of recrystallized microstructure is from 20 microns to 110 microns and having a percentage of eddy current losses in total iron losses, measured at 1 T and 400 Hz according to IEC 60404-2 standards, is from 35% to 45% when calculated in accordance of Bertotti method and simultaneously having a magnetic polarization at 5000 A / m (J50) from 1.64 T to 1.66 T.