110results about How to "Increase deposition rate" patented technology

The invention discloses an application of a thiazole thioketone compound in chemical copper plating and a chemical copper plating solution, and belongs to the technical field of chemical plating. The thiazole thioketone compound with the structure shown in the formula I and the nitrogen-containing heterocyclic compound are combined to be used for chemical copper plating, the deposition speed of the chemical copper plating solution can be increased, the chemical copper plating solution has excellent stability, meanwhile, the electroplating hole filling effect after chemical copper plating can be improved, and correspondingly, the prepared chemical copper plating solution has good bath solution stability, and the chemical copper plating solution can be applied to chemical copper plating. When the copper plating solution is applied to a chemical copper plating method, the deposition rate of chemical copper plating and the compactness of a plating layer can be effectively improved. # imgabs0 #

The utility model relates to the technical field of plasma chemical vapor deposition, and discloses MPCVD equipment which comprises a waveguide device, a cavity, a microwave antenna, a lock sleeve and a connecting piece, the waveguide device is connected to the top of the cavity, a baffle is arranged in the cavity, one end of the microwave antenna penetrates through the waveguide device to form a sealed cavity with the baffle in the cavity, and the other end of the microwave antenna penetrates through the lock sleeve. The microwave antenna is sleeved with the lock sleeve in a sliding mode, the lock sleeve is movably connected to the top of the waveguide device through a connecting piece, and the lock sleeve can horizontally move along the plane where the top of the waveguide device is located and drives the microwave antenna to horizontally move in the cavity so as to change the position of the central axis of the microwave antenna in the sealed cavity. The microwave antenna is driven to move through the lock sleeve, the shape and the position of the generated ion ball can be adjusted, the ion ball is located at the optimal position and state, and then the deposition speed and the deposition quality of vapor deposition are improved.

The invention relates to the technical field of silicon carbide powder manufacturing, in particular to a high-purity silicon carbide powder synthesis method which comprises the steps that S1, graphite paper or carbon fiber cloth is pasted to a resistance heating material and / or the inner wall of a deposition chamber, and the resistance heating material is connected to an electrode; s2, the pressure in the deposition chamber is adjusted to a vacuum state or replaced with an argon atmosphere, and the temperature is increased to 900-1300 DEG C; s3, methyl trichlorosilane, silicon chloride, hydrogen, argon and hydrocarbon gas are conveyed into the deposition chamber in proportion for deposition for 10-150 h, and a silicon carbide block is obtained; s4, the obtained silicon carbide blocks are sequentially subjected to crushing treatment and cleaning treatment, and silicon carbide powder is obtained; and S5, carrying out high-temperature treatment on the silicon carbide powder to obtain the silicon carbide powder for silicon carbide single crystal growth. The method can improve the production efficiency of the silicon carbide powder and reduce the production cost; the synthesized silicon carbide powder has controllable particle size and high purity.

The invention provides a shallow trench isolation structure, a preparation method thereof and a semiconductor device, an insulating blocking layer is formed by adopting a non-ISSG process after an oxide repair layer is formed by adopting an ISSG process and before a silicon oxide film is formed, and the blocking layer made of an insulating material can block-OH and-H ions mixed in the oxide repair layer, so that the isolation performance of the semiconductor device is improved. Therefore, nonuniformity of consumption of active sites-C-H when ozone and TEOS thermal chemical reaction are carried out by more-OH ions in the shallow trench and less-OH ions on the hard mask layer is avoided, consistency of deposition rate and uniformity of a silicon oxide film inside and outside the shallow trench is improved, early sealing of the top of the shallow trench is avoided, and the yield of the shallow trench is improved. Holes and / or gaps in the shallow trench isolation structure are reduced, the hole filling capability and quality of the HARP process are improved, and the reliability and stability of a semiconductor device formed subsequently are improved. In addition, the deposition uniformity of the HARP process on ISSG OX can be improved, and the load of the subsequent CMP process is reduced; in addition, a process window of HARP can be increased, and the back etching amount of the hard mask layer is reduced.

The invention provides a chemical nickel plating solution with controllable plating speed and phosphorus content. The chemical nickel plating solution comprises the following components in concentration content: 13-28 g / L of main salt, 12-25 g / L of a reducing agent, 3-80 g / L of a composite complexing agent, 4-15 mg / L of a stabilizing agent, 10-30 g / L of a buffering agent and 10-40 mg / L of a wetting agent, the composite complexing agent contains 1-40g / L of amine complexing agent. According to the chemical nickel-plating solution disclosed by the invention, the chemical nickel-plating rate can be controlled and the requirements of different phosphorus contents in a nickel-plating layer can be met by only adopting one basic chemical nickel-plating solution formula by only changing the content of the amine complexing agent, cooperating with the combined action of other substances and simultaneously adaptively adjusting the plating conditions, so that the production process is simplified, and the production cost is reduced. The production cost is reduced, and the application prospect is wide.

The invention discloses an AlTiN coating, a cutter and a preparation method. The AlTiN coating is deposited on the surface of the cutter. The AlTiN coating has a molecular formula of Al < m > Ti < 1-m > N < n >, m ranges from 0.5 to 0.7, n ranges from 0.8 to 1.1, and the ratio is an atomic ratio. The preparation method adopts a high-power pulse sputtering technology to deposit the AlTiN coating, and comprises the following process steps: vacuumizing a coating chamber to 5 * 10 <-3 > Pa, and heating to 450-600 DEG C; inert gas is introduced, the air pressure of the coating chamber is adjusted to be 0.5-1 Pa, an ion source is started, the bias voltage is adjusted to be-400--800 V, the frequency is adjusted to be 40-80 kHz, the temperature of the coating chamber is reduced to 300-400 DEG C, and plasma cleaning is conducted on the substrate; a nitrogen flow valve is opened, the flow of the inert gas and the flow of the nitrogen are adjusted respectively, the introduction flow of the inert gas ranges from 100 sccm to 200 sccm, the partial pressure of the inert gas ranges from 0.1 Pa to 0.3 Pa, and the air pressure of the coating chamber is adjusted and controlled to range from 0.6 Pa to 1.0 Pa by introducing the nitrogen; and setting the average power density of the AlTi alloy target material to be 15-20W / cm < 2 >, the peak current to be 400-800A and the substrate bias voltage to be-40--100V, and depositing the coating.

The invention provides a double-sided efficient CVD continuous coating system and method for a thin metal strip, and relates to the technical field of thin film preparation, the main structure of the coating system is that a positive electrode group and a negative electrode group are arranged between two winding discs, and a thin film deposition area is arranged between the positive electrode group and the negative electrode group; the upper clamping electrode and the lower clamping electrode of each pair of clamping electrodes in the positive electrode group and the negative electrode group are in electric contact with the edges of the upper surface and the lower surface of the metal thin strip; the radio-frequency current source is connected to at least one pair of radio-frequency electrodes which are oppositely arranged on the two sides of the substrate channel, the two CVD precursor spray heads are arranged above and below the substrate channel in the thin film deposition area, and the two anti-deposition protection pieces are arranged on the two sides of the substrate channel between the positive electrode group and the negative electrode group and located between the radio-frequency electrodes. According to the invention, Joule heat generated by stable current provided by the electrified self-heating device of the metal thin strip is used for rapidly reaching the temperature required by coating, so that the utilization rate of precursor particles on the surface of the metal thin strip can be improved, and the coating rate is improved while the film forming quality is improved.

The invention provides a wear-resistant Cr / CrN nano coating and a preparation method and application thereof.The preparation method of the wear-resistant Cr / CrN nano coating comprises the steps that firstly, a Cr binding force layer is deposited on the surface of a base material through high-power pulse magnetron sputtering, and then the Cr binding force layer is compositely deposited through high-power pulse magnetron sputtering and pulse direct current sputtering; and a CrN layer is compositely deposited on the surface of the Cr binding force layer by adopting high-power pulse magnetron sputtering and pulse direct current sputtering. The nano coating is high in bonding strength with a base material and high in mechanical strength, the preparation method adopts a mode of combining high-power pulse magnetron sputtering and pulse direct-current magnetron sputtering, pulse parameters, deposition conditions and bias voltage are accurately regulated and controlled, the performance of the coating can be accurately controlled, the deposition rate is high, operation is easy and convenient, cost is low, and the method is suitable for batch production.

The invention discloses a high-corrosion-resistance high-conductivity electroplated palladium / gold-plated palladium-copper bonding wire and a production process thereof, and relates to the technical field of bonding wires, in order to improve the corrosion resistance of the bonding wire, the bonding wire is improved by modifying a core material and preparing a composite coating; according to the method, firstly, the core layer is improved, the corrosion potential of a core material is greatly improved by adding graphene into the core layer, the copper core has good heat dissipation performance and high-temperature conductivity, heat is prevented from being accumulated and heated in the bonding wire, and on the basis, the coating is improved, so that the corrosion resistance of the copper core is improved, and the service life of the copper core is prolonged. The surface appearance of an electroplating coating is improved by reducing the concentration of metal ions in an electroplating solution, increasing a pore filling agent and performing pulse current electroplating, diffusion layers are formed between the graphene copper alloy core and different electroplating layers through annealing treatment, the bonding strength between the graphene copper alloy core and the different electroplating layers is improved, and the use performance of the bonding wire is improved.

The invention discloses a method for selectively separating valuable metals from a positive electrode material of a waste lithium battery, and belongs to the technical field of resource recycling of waste lithium ion batteries. The method comprises the following steps: preparing an aprotic deep eutectic solvent (DES) as a leaching agent and an electrolyte at the same time; the method comprises the following steps: adding a waste positive electrode material into DES, and leaching to obtain a DES leaching-electrolyte system; according to the method, the pulse voltage is applied in stages, selective separation of nickel, cobalt and manganese is achieved by controlling the pulse peak voltage (the first stage is-0.8 V to-1.0 V, the second stage is-1.0 V to-1.2 V, and the third stage is-1.2 V to-1.5 V), and the pulse frequency and the duty ratio are used for regulating and enhancing mass transfer and restraining side reactions. According to the method, the metal deposition potential difference is expanded through DES coordination regulation and control, efficient selective separation of nickel, cobalt and manganese is achieved in combination with pulse step-by-step voltage control, and the method has the advantages of being high in separation efficiency, few in side reaction, simplified in process, high in product purity and the like.

The invention relates to the technical field of passivation coating of heterojunction cells, in particular to a continuous coating method, device and system for passivation of an I layer of a heterojunction cell, and the method comprises the following steps: S1, presetting the temperature of a PECVD cavity to 220-260 DEG C, and feeding an N-type monocrystalline silicon wafer into the PECVD cavity; s2, starting a first power supply, introducing O2 and SiH4, setting the power of an electromagnetic field to be 100-600W, and obtaining an I1 layer on the surface of the N-type monocrystalline silicon wafer; s3, a second power source is started, SiH4 is introduced, the power of the electromagnetic field is set to be 100-400 W, and an I2 layer is obtained on the surface of the I1 layer; s4, a third power source is started, SiH4 and H2 are introduced, the power of the electromagnetic field is set to be 100-400 W, and an I3 layer is obtained on the surface of the I2 layer; s5, the N-type monocrystalline silicon wafer with the passivated I layer is sent out of the PECVD cavity; according to the method, O2 is introduced while the I1 layer is deposited so as to inhibit epitaxial growth caused by high temperature, and an electromagnetic field is matched, so that the film coating speed is greatly increased in a high-temperature environment.

The invention relates to the technical field of SHJ battery microcrystal coating, in particular to a linear continuous coating method for improving the N-surface field passivation effect of a heterojunction battery, which comprises the following steps of: S1, presetting the temperature of a PECVD (Plasma Enhanced Chemical Vapor Deposition) cavity to 200-260 DEG C, and feeding an N-type monocrystalline silicon wafer into the PECVD cavity; s2, the phase angle of a pair of independent power supplies in the HPT power supply and the passivation power supply is set to be 0-180 degrees; s3, starting a first HPT power supply; s4, starting a first passivation power supply, and obtaining an N1 layer on the surface of the N-type monocrystalline silicon wafer; then repeating the steps to obtain an N2 layer and an N3 layer in sequence; step S9, the N-type monocrystalline silicon wafer with the passivated N layer is sent out of the PECVD cavity; according to the invention, an electromagnetic field is formed by using a power supply with a phase angle of 0-180 degrees, the deposition area is controlled while the coating rate is accelerated, and meanwhile, due to the fact that the deposition area is controlled by the electromagnetic field, the effect of N-layer gradient doping in a single cavity is realized.

The invention discloses a vacuum drying coating device for a vacuum sputtering continuous coating production line, and relates to the technical field of vacuum coating devices.The vacuum drying coating device comprises a vacuum chamber, a coating assembly and a coating turnover assembly are arranged in the vacuum chamber, and a plurality of drying lamps are connected to the inner wall of the vacuum chamber; according to the device, the air cylinder can be started, a push rod of the air cylinder stretches out and draws back to drive the rack to move, the rack is meshed with the gear, and the rotating rod, the second side plate, the connecting plate, the first side plate and the rotating shaft are sequentially driven, so that the cylindrical target material rotates around the axis of the rotating rod; therefore, the distance between the film-coating device and the to-be-coated plate on the conveying belt is Through the design, the lifting distance of the cylindrical target material can be accurately controlled and can be flexibly adjusted according to the thin film thickness requirement or the plate thickness; for example, the spacing can be reduced and the deposition speed can be accelerated during thick film production, and the spacing can be increased and the speed can be reduced during thin film production.

The present application relates to the technical field of target material preparation, and provides a high-boron-doped silicon target material, a preparation method thereof, and a solar cell. The preparation method comprises: mixing silicon-boron compound powder and silicon powder to obtain a mixed powder; thermally spraying the mixed powder, and then mechanically crushing to obtain a silicon-boron alloy block; airflow crushing the silicon-boron alloy block to obtain a silicon-boron alloy powder; thermally spraying the silicon-boron alloy powder onto a back tube, and then machining to obtain a silicon target material. The present application thermally sprays a mixed powder of silicon-boron compound powder and silicon powder, so that the silicon-boron compound powder and the silicon powder are heated to a molten or semi-molten state, so that the silicon-boron compound powder and the silicon powder are firmly combined to form a silicon-boron alloy, so that the silicon-boron compound is not separated after airflow crushing, which helps to improve the boron deposition rate and accurately control the boron content of the silicon target material. As a master alloy with a high boron content, the silicon-boron compound is not affected by the low solid solubility of boron in silicon, and it is easy to prepare a high-boron-doped silicon target material.

The invention relates to the technical field of target material preparation, and provides a high-boron doped silicon target material, a preparation method thereof and a solar cell. The preparation method comprises the following steps: mixing silicon boron compound powder and silicon powder to obtain mixed powder; the mixed powder is subjected to thermal spraying treatment and then mechanically crushed to obtain a silicon-boron alloy block; the silicon-boron alloy block is subjected to airflow crushing, and silicon-boron alloy powder is obtained; and thermally spraying the silicon-boron alloy powder onto the back tube, and then machining to obtain the silicon target material. According to the method, the mixed powder of the silicon-boron compound powder and the silicon powder is subjected to thermal spraying, so that the silicon-boron compound powder and the silicon powder are heated to the molten or semi-molten state, the silicon-boron compound powder and the silicon powder are firmly combined to form the silicon-boron alloy, the silicon-boron compound is not separated after air jet pulverization, and the silicon-boron alloy is not separated after air jet pulverization. And the boron deposition rate can be increased, and the boron content of the silicon target material can be accurately controlled. The silicon-boron compound serving as a mother alloy with high boron content is not influenced by low solid solubility of boron in silicon, and the high-boron-doped silicon target material is easy to prepare.

The hot filament chemical vapor deposition assembly comprises a hot filament box and a hot filament, the hot filament box forms a first cavity in a surrounding mode, and the hot filament box comprises a first side plate and a second side plate which are oppositely arranged in the first direction; the number of the hot wires is multiple, the multiple hot wires are located in the first cavity and arranged at intervals in the second direction, the second direction is perpendicular to the first direction, the two opposite ends, in the first direction, of each hot wire are connected with the first side plate and the second side plate correspondingly, and each hot wire comprises a spiral section spirally extending in the first direction. The hot filament chemical vapor deposition assembly provided by the invention has the advantages that the thin film deposition rate is not influenced while the hot filament is prevented from deforming and drooping.

The invention provides a multi-principal-element alloy film and a preparation method thereof. The multi-principal-element alloy film is composed of Ta, Hf and W according to the equal atomic ratio or the non-equal atomic ratio, and the chemical formula of the multi-principal-element alloy film is TaaHfbWc, wherein a is 30%-50%, b is 15%-35%, c is 30%-45%, and a + b + c = 1. The multi-principal-element alloy film provided by the invention can be obtained through a multi-target direct-current magnetron sputtering film deposition method, and the Ta-Hf-W multi-principal-element alloy film is controllable and uniform in component, good in compactness, small in surface roughness and high in hardness and elastic modulus.

The invention provides a method for improving the hardness of diamond particles through mosaic splicing, and belongs to the field of superhard materials. The method comprises the following steps: 1) selecting monocrystal diamond particles to be processed, and processing micropores in the surface of a copper substrate; (2) single crystal diamond is spliced into the micropores, the copper substrate is placed into CVD equipment, and a layer of doped diamond is deposited on the surfaces of the exposed diamond particles in a pulse mode; (3) a film formed by particles of the pulse type deposition doped diamond layer is taken down and placed on the alloy powder in an inverted mode, and an alloy substrate wrapping a diamond doped face is formed; (4) the substrate is placed in CVD equipment, and doped diamond is deposited on the surfaces of the diamond particles in a pulse mode till the thickness of first pulse deposition is achieved; 5, the deposited diamond particles are fragment.The hardness of the diamond particles prepared through the method is improved by 2-4.5 times, the grade of diamond powder can be improved through the method, and the method is simple and convenient in preparation process, low in cost and suitable for industrial application with various high hardness requirements.

The invention provides a spray gun mounting rack which comprises a mounting plate, a vibration assembly and at least two powder feeding assemblies, and spray holes are formed in the mounting plate in a penetrating mode; at least two groups of powder feeding assemblies are arranged on the mounting plate at intervals around the spraying hole, each powder feeding assembly comprises a powder feeding needle, the outlet end of each powder feeding needle faces the spraying hole, and the powder feeding needles can rotate around the axis parallel to the axial direction of the spraying hole so as to adjust the powder outlet direction of the powder feeding needles. The vibration assembly is used for removing accumulated burls at the muzzle of the spray gun in a vibration mode. By adopting the spray gun mounting frame, before spraying, the powder feeding needles are rotated in the same rotation direction, so that the powder outlet directions of the powder feeding needles are staggered from the centers of the spraying holes, the powder outlet directions of the multiple powder feeding assemblies are staggered, the situation that the powder outlet directions are opposite to one another is avoided, and therefore the situation that powder conflicts and losses are caused is avoided; and the deposition rate of the sprayed target material is effectively improved. The invention further discloses coating equipment and a coating method.

The invention relates to the technical field of coating processes, in particular to a corrosion-resistant coating process for screw products. The screw product corrosion-resistant coating comprises an aluminum / silicon carbide composite material and a screw subjected to surface treatment, and the surface of a screw base material is coated with the aluminum / silicon carbide composite material through a magnetron sputtering method. By controlling the process parameters of the aluminum / silicon carbide composite material, the prepared composite material is high in mechanical strength; the magnetron sputtering method is utilized, technological parameters are controlled, and the deposition rate of the prepared coating is high; the aluminum / silicon carbide coating screw prepared by changing the type of the aluminum base in the composite material and controlling the sputtering power is good in corrosion resistance; the silane coupling agent is used for treating the surface of the screw base material, and the treatment parameters are controlled, so that the bonding capacity of the prepared coating and the screw is improved; the coating is prepared from alpha-Si / C and the aluminum alloy, so that the friction resistance of the screw base material is improved.

The invention discloses a method for depositing an aluminum oxide coating at a high speed by a high-power pulse magnetron sputtering technology of an ultrahigh-temperature liquid target material, and relates to a method for depositing an aluminum oxide coating at a high speed. The invention aims to solve the problem that the sputtering rate of a target material is very low due to a target poisoning phenomenon in the existing aluminum oxide coating sputtering deposition process. The method comprises the following steps: 1, putting a sputtering target material into a target seat, and adjusting a gap between the target seat and a magnetron target cooling base; 2, forming high-power pulse magnetron sputtering discharge through a high-power pulse magnetron power supply until the surface of the target material is molten; and 3, O2 gas is introduced, and sputtering is carried out at high power and ultra-high temperature. The method is used for high-speed deposition of the aluminum oxide coating through the ultrahigh-temperature liquid target high-power pulse magnetron sputtering technology.

The invention relates to the technical field of electrolytic aluminum alloys, and particularly discloses a method for preparing an aluminum alloy through an electrolytic process, aiming at the problem that the material performance and the use effect of an aluminum alloy product are directly influenced due to the fact that the dispersion degree of doped alloy elements in molten aluminum is low and the doping effect is poor. Extracting aluminum oxide; s2, doping electrolysis: mixing an aluminum oxide with molten chlorate, heating and melting, adding a doped alloy element and a surfactant, and electrifying for electrolysis to obtain an electrolytic aluminum alloy; and S3, forming treatment is conducted, specifically, the electrolytic aluminum alloy is machined, and an aluminum alloy product is obtained. By the adoption of the method for preparing the aluminum alloy through the electrolysis method, the aluminum alloy material doped with alloy elements can be prepared and dispersed more sufficiently and evenly, and the aluminum alloy material has more stable and long-acting material performance and use effect.

The invention relates to a spring coloring device which comprises a rectangular vertical frame, a guide assembly, a cleaning and coloring module, an air drying device and a conveying assembly, the guide assembly is assembled at the upper end of the rectangular vertical frame in a vibratable mode in the length direction of the rectangular vertical frame, and the guide assembly is provided with a smooth area, a vibration area, a cleaning and coloring module, an air drying device and a conveying assembly in the length direction of the guide assembly. When the spring cleaning and coloring device is used for cleaning and coloring a spring, vibration generated by an air drying device during working is utilized to drive a guide assembly to vibrate, so that a spring frame assembly loaded with the spring can vibrate in the cleaning and coloring module when passing through the cleaning and coloring module, and the cleaning and coloring effects are improved; and meanwhile, in the process that the spring frame assembly moves to the vibration area along the guide assembly, vibration is intensified in the process that the spring frame assembly moves to be close to the air drying device through cooperation of the rolling matching piece and the vibration area, so that surface moisture is rapidly shaken off, the air drying efficiency is improved, and then the working efficiency of cleaning and coloring the springs is improved.

The invention discloses a MoNbZr / Zr nano-layered material and a preparation method thereof. The MoNbZr / Zr nano-layered material is prepared by depositing on a clean silicon substrate by a magnetron sputtering deposition method. Ar+ ions bombard a target material to cause elastic collisions with MoNbZr / Zr atoms, further generating a collision cascade, whereby the sample atoms are excited and reversely deposited onto the substrate. MoNbZr atoms and Zr atoms are deposited in sequence to alternately form multilayer nano-layered materials with different modulation periods, different interface structures, and different phase compositions. High-density plasmas such as secondary electrons generated by sputtering circulate in the form of cycloids under the combined action of mutually perpendicular electromagnetic fields, and do not contact the substrate. Therefore, the ionization efficiency is high and the deposition rate is fast. The invention not only successfully prepares nano-layered materials with different phase compositions, but also the obtained nano-layered materials are uniform and dense, with clear interface structures and excellent comprehensive performance.

The invention provides an anti-oxidation coating for the surface of nickel-iron-based alloy, which is prepared by the following method, with nickel-iron-based alloy as substrate, and a lanthanum zirconate anti-oxidation coating is deposited on the substrate surface using a pulsed laser deposition method; during the pulsed laser deposition process, the substrate temperature is 550-800°C, the laser energy is 200-400J, the pulse frequency is 2-6Hz, the spacing between the lanthanum zirconate target and the substrate is 4-5cm, and a mixed atmosphere of oxygen and an inert gas with a volume ratio of 4-6:1 is used as a protective atmosphere. The obtained lanthanum zirconate anti-oxidation coating not only has good interface bonding with the nickel-iron-based high-temperature alloy, but also has good anti-oxidation performance under a saturated water vapor environment, and can achieve the purpose of alloy protection without affecting the mechanical properties of the alloy.

This application relates to a spraying process for a highly corrosion- and wear-resistant yttrium oxide composite coating, aiming to solve the problems of high porosity, poor high-temperature stability, and insufficient wear resistance of existing yttrium oxide coatings. The process includes degreasing and cleaning, pure water immersion, sandblasting roughening, steam and water rinsing, ultrasonic cleaning, pre-drying, plasma spraying, orthogonal experimental parameter optimization, deep ultrasonic cleaning, and final drying and curing. A yttrium oxide and zirconium oxide composite powder is used to form a dense coating under optimized plasma spraying parameters, and high cleanliness is ensured through multi-stage cleaning and clean environment control. Through the above technical solution, this application significantly improves the coating's density, chemical stability, wear resistance, and thermal shock resistance, effectively blocks the penetration of corrosive media, reduces particulate contamination, and meets the stringent requirements of semiconductor etching equipment for long-lasting protective coatings.

A forming method of a surface acoustic wave resonance device comprises the steps that an interdigital electrode structure is formed on the surface of a piezoelectric layer, and the interdigital electrode structure comprises a plurality of first electrode strips and a plurality of second electrode strips; a temperature compensation layer is formed on the piezoelectric layer, the temperature compensation layer covers the interdigital electrode structure, the temperature compensation layer comprises a first temperature compensation material layer, and the forming method of the temperature compensation layer comprises the following steps: forming the first temperature compensation material layer on the piezoelectric layer and the interdigital electrode structure by adopting a plasma enhanced chemical vapor deposition process, according to the plasma enhanced chemical vapor deposition process, tetraethoxysilane is adopted as a reaction source, the plasma enhanced chemical vapor deposition process has a first process temperature, and the first process temperature ranges from 270 DEG C to 400 DEG C, so that the uniformity and compactness of the temperature compensation layer are improved, the temperature coefficient of frequency (TCF) of the surface acoustic wave resonance device is improved, and the surface acoustic wave resonance effect is improved. And the working stability and reliability of the surface acoustic wave resonance device are improved.

The invention relates to the technical field of chemical copper deposition, in particular to chemical copper deposition complex liquid and a preparation method thereof.The chemical copper deposition complex liquid is prepared from, by weight, 1.0%-1.4% of copper sulfate, 3%-6% of a reducing agent, 8%-12% of sodium hydroxide, 5%-15% of a complexing agent, 0.1%-0.5% of a stabilizer, 0.3%-0.8% of an accelerator, 1%-3% of a buffering agent, 1%-2% of a surfactant and the balance water; the accelerator is obtained by mixing sodium thiosulfate, nickel sulfate and tungstate according to the weight part ratio of (3-5): (1-3): 2, and by adopting the formula, the copper deposition speed can be increased, and the copper deposition efficiency can be improved. The chemical thick copper deposition complex liquid can form a uniform and compact copper layer. The copper layer has good conductivity, adhesive force and corrosion resistance, and can meet the requirements for the quality of the copper layer in the fields of electronics, PCB manufacturing and the like.

This invention relates to a nitrogen-doped porous silicon-carbon anode material, its preparation method, and its application. The preparation method includes: placing porous carbon in a reactor under a protective atmosphere and heating it, while introducing a nitrogen source gas for heat preservation, to obtain a nitrogen-containing porous carbon matrix; wherein the carbon element in the nitrogen-containing porous carbon matrix forms C-N bonds with the nitrogen element; placing the nitrogen-containing porous carbon matrix in a reactor and heating it, while introducing a mixed gas of nitrogen source gas and silicon source gas, during the heat preservation process, the C-N bonds induce silicon source gas deposition, resulting in the uniform deposition of nano-silicon particles and nitrogen-doped silicon particles in the pores of the nitrogen-containing porous carbon matrix; after cooling to room temperature, and after dispersion, sieving, and demagnetization, the nitrogen-doped porous silicon-carbon anode material is obtained; using the nitrogen-doped porous silicon-carbon anode material of this invention in lithium-ion batteries can improve the battery's specific capacity, first-cycle coulombic efficiency, rate performance, and cycle life.

The present application discloses a method for repairing SiC coating on the surface of graphite disk by using MOCVD system, which relates to the field of semiconductor device technology, and comprises the following steps: placing the graphite disk to be repaired into the reaction chamber of MOCVD system, introducing SiH4 and C3H8 for repair reaction, and obtaining a graphite disk with SiC coating on the surface; the temperature of the repair reaction is 1245-1255°C; the pressure of the repair reaction is 190-210torr; the volume flow rate of SiH4 is Q1, and the volume flow rate of C3H8 is Q2, which satisfies: 3≤Q2 / Q1≤7.5. The present application improves the deposition rate of SiC on the surface of graphite disk by controlling the pressure of the repair reaction within a suitable range and coordinating and regulating the flow rate ratio of the growth source in the repair reaction, and the suitable deposition rate is conducive to the growth of SiC coating, and deposition within a suitable time range can improve the cycle life of graphite disk.