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1517results about How to "Increase deposition rate" patented technology

Method for depositing thin films by mixed pulsed CVD and ald

Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.

Gap tuning for surface micromachined structures in an epitaxial reactor

A method for adjusting with high precision the width of gaps between micromachined structures or devices in an epitaxial reactor environment. Providing a partially formed micromechanical device, comprising a substrate layer, a sacrificial layer including silicon dioxide deposited or grown on the substrate and etched to create desired holes and/or trenches through to the substrate layer, and a function layer deposited on the sacrificial layer and the exposed portions of the substrate layer and then etched to define micromechanical structures or devices therein. The etching process exposes the sacrificial layer underlying the removed function layer material. Cleaning residues from the surface of the device, then epitaxially depositing a layer of gap narrowing material selectively on the surfaces of the device. The selection of deposition surfaces determined by choice of materials and the temperature and pressure of the epitaxy carrier gas. The gap narrowing epitaxial deposition continues until a desired gap width is achieved, as determined by, for example, an optical detection arrangement. Following the gap narrowing step, the micromachined structures or devices may be released from their respective underlying sacrificial layer.

Thin film deposition via a spatially-coordinated and time-synchronized process

A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time. The net effect of spatial coordination and time synchronization of material streams is a plasma whose distribution of species is optimized for the deposition of a thin film photovoltaic material at high deposition rates. Delivery devices include nozzles and remote plasma sources.
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