18results about How to "Increase deposition rate" patented technology

The invention discloses a method for selectively separating valuable metals from a positive electrode material of a waste lithium battery, and belongs to the technical field of resource recycling of waste lithium ion batteries. The method comprises the following steps: preparing an aprotic deep eutectic solvent (DES) as a leaching agent and an electrolyte at the same time; the method comprises the following steps: adding a waste positive electrode material into DES, and leaching to obtain a DES leaching-electrolyte system; according to the method, the pulse voltage is applied in stages, selective separation of nickel, cobalt and manganese is achieved by controlling the pulse peak voltage (the first stage is-0.8 V to-1.0 V, the second stage is-1.0 V to-1.2 V, and the third stage is-1.2 V to-1.5 V), and the pulse frequency and the duty ratio are used for regulating and enhancing mass transfer and restraining side reactions. According to the method, the metal deposition potential difference is expanded through DES coordination regulation and control, efficient selective separation of nickel, cobalt and manganese is achieved in combination with pulse step-by-step voltage control, and the method has the advantages of being high in separation efficiency, few in side reaction, simplified in process, high in product purity and the like.

This application relates to a spraying process for a highly corrosion- and wear-resistant yttrium oxide composite coating, aiming to solve the problems of high porosity, poor high-temperature stability, and insufficient wear resistance of existing yttrium oxide coatings. The process includes degreasing and cleaning, pure water immersion, sandblasting roughening, steam and water rinsing, ultrasonic cleaning, pre-drying, plasma spraying, orthogonal experimental parameter optimization, deep ultrasonic cleaning, and final drying and curing. A yttrium oxide and zirconium oxide composite powder is used to form a dense coating under optimized plasma spraying parameters, and high cleanliness is ensured through multi-stage cleaning and clean environment control. Through the above technical solution, this application significantly improves the coating's density, chemical stability, wear resistance, and thermal shock resistance, effectively blocks the penetration of corrosive media, reduces particulate contamination, and meets the stringent requirements of semiconductor etching equipment for long-lasting protective coatings.

The utility model discloses a coating baffle plate adjusting mechanism and coating equipment. The coating baffle plate adjusting mechanism comprises a coating baffle plate body, a connecting rod and a driving piece, the coating baffle body is fixedly connected with the connecting rod; the output end of the driving part extends into the vacuum coating cavity, is connected with the connecting rod and is used for controlling the connecting rod to rotate around the axis direction of the connecting rod; the other end of the driving part is exposed out of the vacuum coating cavity; and a magnetic fluid sealing structure is arranged in the middle of the outer wall of the driving part and is used for separating the vacuum coating cavity from the outside. Through the arrangement, the angle of the coating baffle plate body can be adjusted on the premise that the vacuum environment in a vacuum coating cavity is not damaged, so that a process test can be quickly carried out after the adjustment is completed, the time required by the whole adjustment process is shortened, and the coating speed is improved.

The application relates to the technical field of micro-nano manufacturing and electrochemical additive manufacturing, and more particularly to a limited electrodeposition device, system and method based on two-phase temperature regulation. The device comprises a platform, a cathode substrate installed on the platform, a moving mechanism installed on the platform, a nozzle installed on the moving end of the moving mechanism, a heating assembly arranged on a liquid supply path of the nozzle and a cooling assembly installed on the platform; the heating assembly is used for heating working liquid to be higher than room temperature; a water flow channel is arranged in the nozzle; the surface of the cathode substrate is covered with a mask layer, and the cooling assembly is used for cooling the mask layer to be below room temperature; and the moving mechanism is used for driving the nozzle to move relative to the cathode substrate. Through the temperature gradient of the high-temperature working liquid and the low-temperature liquid mask, a thermal Marangoni convection is induced at the liquid-liquid interface, the convection can effectively update the concentration boundary layer, the high-concentration ions in the body are continuously sucked to the deposition interface, the mass transfer bottleneck at room temperature is broken, and the limiting current density and the deposition rate are greatly improved.

This invention provides a gas equalization assembly, a semiconductor process chamber, and a semiconductor thin film deposition apparatus. The gas equalization assembly includes: a gas equalization chamber, a servo motor, and a gas equalization plate, a gas equalization fan, and a spray plate located within the gas equalization chamber. The gas equalization chamber is a hollow cavity with a top wall having an air inlet and a mounting hole, and an open bottom end. The gas equalization plate is used for zoned diffusion of the incoming gas. The upper end of the servo motor is fixed above the top wall of the gas equalization chamber, and its lower end's rotating shaft extends through the mounting hole into the interior of the gas equalization chamber. The gas equalization fan is configured to rotate synchronously with the rotating shaft to mix, pressurize, and uniformly deliver the gas downwards. The spray plate is located below the gas equalization fan and covers the bottom end of the gas equalization chamber. The spray plate has multiple air jets arranged in an array to uniformly spray the gas from the gas equalization chamber. This effectively improves the uniformity and consistency of the reactant gas entering the reaction chamber, thereby improving the uniformity of thin film deposition.

The application discloses an ion beam composite sputtering target assembly with a diamond coating three-dimensional skeleton and a preparation method thereof, which comprises a composite sputtering target, a cooling back plate and a transition layer, wherein the composite sputtering target comprises a three-dimensional skeleton with a diamond coating and a main sputtering material filled in the three-dimensional skeleton; the three-dimensional skeleton is a honeycomb structure or a net structure; and the transition layer is arranged between the composite sputtering target and the cooling back plate and is a Cu-Mo-Cu composite layer structure. Compared with the prior art, the application has better heat shock resistance and structural stability.

The invention discloses a laser-assisted MCED electrochemical deposition method and an inclined cantilever beam preparation method, and the method comprises the steps: S1, carrying out laser-assisted experiment simulation on a glass microprobe tip in an MCED system through COMSOL software to obtain correlation characteristics of temperature field change and deposition rate of the glass microprobe tip under different laser parameters; s2, after a stable electrolyte droplet bridge is formed in the MCED system, a laser-assisted assembly is started; s3, the droplet bridge form, the deposition point form and the deposition area temperature are observed in real time based on a temperature-vision system; and S4, the MCED central controller realizes regulation and control on the shape of the liquid drop at the tip of the glass microprobe based on coordination in the step S3, the shape of the liquid drop bridge is kept consistent, and the preparation of the micro-nano structure is rapidly completed on the substrate. According to the MCED electrochemical deposition method based on laser assistance and the inclined cantilever beam preparation method, the deposition rate is increased while the process stability is guaranteed, micro-nano manufacturing is completed, and the MCED technology is promoted to be applied and developed to industrialization.

This invention discloses a process for manufacturing an impact-resistant and wear-resistant ultra-hard metal-based composite layer and a straightening roller, comprising an alloy groove coating layer one, an alloy groove coating layer two, and an alloy working layer; both alloy groove coating layer one and alloy groove coating layer two have sinusoidal structures, are staggered, and have at least one set of intersection nodes between them, and are located inside the alloy working layer. By introducing V and Nb into the original formulation and precisely adjusting the proportions of components such as Co, Ni, Cr, C, B, and Si to meet the requirements, the composite layer retains high hardness and good oxidation resistance, impact resistance, thermal shock resistance, and corrosion resistance at high temperatures, improving the spraying process performance of the alloy coating and increasing the deposition rate.

This invention discloses an electrochemical synthesis method for electrochromic Prussian blue films and a flexible electrochromic device, belonging to the field of electrochromic material preparation technology. The method includes three steps: preparing an electroplating solution, electrochemical deposition, and post-treatment. The electroplating solution uses deionized water as a solvent and contains a main salt, secondary salt, complexing agent, and surfactant, with the pH adjusted to 2.0–2.5. Electrochemical deposition employs a constant potential method, with a deposition potential of 0.65–0.85 V, a time of 300–600 s, and a temperature of 25–35 °C. Post-treatment involves rinsing and drying to obtain the product. This invention solves the problem of easy precipitation in the plating solution through a complexing agent compound system and precise pH control, achieving a plating solution stability of over 24 hours. The prepared film is uniform and dense with excellent electrochemical performance. It also provides a matching flexible electrochromic device, suitable for large-scale production, and has broad application prospects.

The application discloses a preparation method and application of a polydopamine quaternary ammonium salt functionalized adsorption material, which comprises preparation of the polydopamine quaternary ammonium salt functionalized adsorption material and adsorption and separation of heavy metal ions in a solution. The preparation of the polydopamine quaternary ammonium salt functionalized adsorption material comprises amine group functionalization, aminomethylation and quaternary ammonization steps; the polydopamine quaternary ammonium salt functionalized adsorption material is used to quickly adsorb heavy metal ions in water, heavy metal ions can be efficiently adsorbed and removed, and the polydopamine quaternary ammonium salt functionalized adsorption material has the advantages of large adsorption capacity and fast adsorption speed.

The application discloses a kind of for nanoscale blind hole filling electroless cobalt solution, the electroless cobalt solution is made of the following proportion of raw materials: cobalt chloride 11.5~33.5g / L, sodium citrate 23.5~47.5g / L, hydrazine hydrate 13.5~59.5mL / L, triethanolamine 1.0~7.0mL / L, sodium polystyrene sulfonate 1.0~5.0mg / L, the rest is distilled water;And use NaOH to adjust the pH of the electroless cobalt solution is 12.0~13.0;Wherein triethanolamine is accelerator, and sodium polystyrene sulfonate is inhibitor.The present application can realize nanoscale blind hole's perfect electroless cobalt filling without cavity, without gap by adding milligram level macromolecular inhibitor sodium polystyrene sulfonate in electroless cobalt solution, and electroless cobalt solution is stable, and deposition cobalt film quality is good.

The invention relates to an MOCVD (Metal Organic Chemical Vapor Deposition) reactor for normal-pressure growth and a film growth method, belongs to the technical field of semiconductor material preparation, and solves the problems that a film formed by a horizontal air inlet MOCVD reactor in the prior art is thick in front and thin in rear, poor in uniformity and locally accumulated. The device comprises a reaction chamber, a gas inlet assembly and a reaction assembly, the reaction assembly is arranged in the center of the reaction chamber, and the gas inlet assembly is arranged on the first side of the reaction assembly and used for providing reaction gas for the reaction assembly; reaction gas enters the reaction assembly in a layered mode, and the reaction gas comprises upper-layer ammonia gas, a middle-layer MO source, carrier gas and lower-layer ammonia gas. The uniformity of the formed film can be improved, and local accumulation is reduced.

The present disclosure relates to the technical field of semiconductor and photovoltaic, and particularly relates to a furnace tube inner wall coating device and processing equipment, which solves the problem that the deposition uniformity and deposition rate cannot meet the requirements when depositing a protective coating on the inner wall of the furnace tube in the related art. The furnace tube inner wall coating device comprises a quartz furnace tube with a furnace cavity and a plasma generating assembly, and the plasma generating assembly comprises: at least one inductive line movably connected to the outer wall of the furnace cavity or the furnace tube, the inductive line extending along a first direction and being arranged at a position close to the inner side wall of the quartz furnace tube or a position close to the outer wall of the furnace tube; a driving member connected with the inductive line, and the driving member is configured to drive the inductive line to rotate around the circumference of the inner side wall of the quartz furnace tube or the outer wall of the furnace tube. The furnace tube inner wall coating device and processing equipment provided by the present disclosure can make the protective coating deposited on the inner wall of the furnace tube more uniform and the deposition rate higher.

This invention discloses an anti-oxidation and wear-resistant composite coating for an alloy roller surface and its manufacturing process, comprising an alloy groove coating layer one, an alloy groove coating layer two, and an alloy working layer. Both alloy groove coating layer one and alloy groove coating layer two have sinusoidal structures, circumferentially staggered on the alloy roller surface. At least one set of intersection nodes is formed between adjacent alloy groove coating layers one and two, and anchoring nodes are provided at the intersection nodes. Alloy groove coating layers one and two are located inside the alloy working layer. This invention improves the interlayer bonding strength and reduces the thickness by improving the structure, materials, and process, while also enhancing impact resistance, thermal shock resistance, and corrosion resistance to a certain extent, and maintaining high hardness at high temperatures.

This invention discloses a cold spraying molding method for the outer wall of a combustion chamber, comprising the following steps: S1, filling with filler: first, milling grooves in the inner wall of the substrate to form grooves, and then cleaning and drying them, then filling the grooves with conductive filler until they are flush with the top surface of the grooves, and obtaining the substrate surface after the conductive filler solidifies; S2, cold spraying a pure copper layer: after cleaning and drying the substrate surface, cold spraying pure copper powder onto the substrate surface to form a pure copper layer; S3, cold spraying a pure nickel layer: after cleaning and drying the pure copper layer, cold spraying pure nickel powder onto the surface of the pure copper layer to form a pure nickel layer; S4, removing filler; The cold spraying technology used in this invention has no high-temperature process, avoiding the softening of the inner wall material and residual thermal stress during the deposition process, resulting in high bonding strength; high deposition rate, greatly shortening the manufacturing cycle of the outer wall of the combustion chamber.

The present invention relates to a trisilylamine compound, a composition for depositing a silicon-containing thin film comprising the same, and a method for manufacturing a silicon-containing thin film using the same, the silicon-containing thin film manufactured from the trisilylamine compound according to the present invention not only has excellent chemical and thermal stability, but also has a low dielectric constant, therefore, the present invention can be usefully used as an insulating film for a semiconductor device, in particular, as a spacer for a semiconductor miniaturization process.

The invention provides a tough low-stress super-thick AlTiN-based coating as well as a preparation method and application thereof, and belongs to the technical field of surface engineering and functional coatings. The coating is obtained through deposition of a high-power pulse magnetron sputtering technology, and the film-substrate binding force is enhanced through glow cleaning and ion source cleaning pretreatment in the preparation process; by utilizing the advantage of uniform and controllable energy of a high-power pulse magnetron sputtering technology, a high-density plasma region is constructed between a target material and a substrate, so that not only can an extremely high deposition rate be obtained, but also the residual stress of the coating is controllable. The prepared coating is excellent in mechanical property, the nanometer hardness is larger than or equal to 30 GPa, the binding force is larger than 100 N, the residual stress under the thickness of 21 micrometers is only-4.5 GPa, and the cutting edge of the prepared coating tool is sharp and smooth. The method can be widely applied to high-speed heavy-load cutting tools, molds and other wear-resistant parts, and the service life can be remarkably prolonged.

This invention relates to the field of N-type crystalline silicon solar cell manufacturing technology, specifically to a graded deposition LPCVD process for N-type cell passivation layers. The main steps include depositing a silicon-oxygen tunneling layer of 1.5–2.5 nm and graded deposition of the film layers. The graded deposition steps include: a first-stage deposition to obtain a polycrystalline silicon film of 90–150 nm with a crystallinity of 80–95%; a second-stage deposition to obtain a polycrystalline silicon film of 50–100 nm with a crystallinity of 60–80%; and a third-stage deposition to obtain a polycrystalline silicon film of 30–80 nm with a crystallinity ≤50%. This invention achieves polycrystalline silicon films with crystallization gradient characteristics by changing process parameters, such as pressure, temperature, and gas flow rate ratio, within the same deposition process. The crystallinity of polycrystalline silicon significantly affects the diffusion behavior of impurity atoms subsequently doped using methods such as boron diffusion and phosphorus diffusion. This technology can optimize film performance, meet specific process application requirements, and further improve cell performance.