5081 results about "Nitride" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Solid-state laminate electrode assemblies and various methods for making the solid-state laminate electrode assemblies involve a lithium metal layer reactively bonded to a lithium ion conducting sulfide glass layer. During manufacture, highly reactive surfaces of the lithium metal layer and the lithium ion conducting sulfide glass layer are maintained in its substantially unpassivated state until they have been reactively bonded. An intermediary solid electrolyte structure has a Li ion conducting solid electrolyte layer covered with a thin as-deposited lithium phosphorus nitride film. A surface protected solid electrolyte having a solid electrolyte layer having a first major surface that is covered by a composite protective film, the composite protective film having a lithium phosphorus material component and a phosphorus nitride material component. A physical vapor deposition target for the deposition of a composite protective film, the target having a compacted composite material target having a mosaic structure.

A method for creating polycrystalline silicon nitride fibers is discussed. The method includes dispersing silicon nitride powder to create dispersed silicon nitride powder. The dispersed silicon nitride powder is classified to create classified fine silicon nitride powder. Likewise, a sintering aid is dispersed to create a dispersed sintering aid and then classified to create a classified sintering aid. A plasticizer, a binder, and the classified sintering aid are added to the classified fine silicon nitride powder to define a compound. The compound is mixed to create a mixed slurry, which is then dried to create a material. The material is extruded through a nozzle that is less than 40 micrometers in diameter to create a preform, which is then sintered to create the polycrystalline silicon nitride fibers.

A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, two or more source / drain (S / D) electrodes, a gate electrode, a doped III-V semiconductor layer, a gate protection layer and a first passivation layer. The doped III-V semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The gate protection layer caps the gate electrode and the doped III-V semiconductor layer and is separated from the S / D electrodes. The first passivation layer covers the second nitride-based semiconductor layer and the gate protection layer and abuts against sidewalls of the S / D electrodes which are separated from the gate protection layer by the first passivation layer.

The invention belongs to the technical field of battery materials, and particularly relates to a method for preparing a porous carbon structure containing a sub-nanoscale ionic conduction improvement layer by utilizing atomic layer deposition and application. The invention discloses a porous carbon-silicon negative electrode structure, which is characterized in that a sub-nano-scale ion conduction improvement layer is added between a porous carbon substrate and silicon particles, and the sub-nano-scale ion conduction improvement layer comprises silicon carbide, aluminum phosphide, aluminum nitride, aluminum oxide, lithium phosphate, aluminum phosphate and lithium aluminum phosphate. Meanwhile, the invention also discloses a preparation method of the porous carbon-silicon negative electrode structure, namely, a sub-nano-scale ion conduction improvement layer is deposited on the porous carbon substrate through an atomic layer deposition method, so that the binding force between the sub-nano-scale ion conduction improvement layer and silicon particles and an ion transport channel are increased, and the ion conduction of a vapor deposition silicon-carbon negative electrode material is improved; the polarization of the material is effectively reduced, so that the rate capability of the battery is improved, and the cycling stability of the porous carbon structure battery is improved.

The invention discloses a desulfurizer and a desulfurization method using the desulfurizer, belongs to the technical field of desulfurizer processing, and aims to solve the problems that in the gas desulfurization engineering of a zinc oxide type desulfurizer in the prior art, gas molecules are not easy to diffuse and adsorb on particle surfaces, and the desulfurization efficiency is low. The sulfur capacity, the specific surface area and the desulfurization efficiency of the desulfurizer need to be further improved. The desulfurizer is prepared by mixing molten salt etching modified kaolin, loaded activated carbon and sol according to the weight ratio of (8-9): (13-15): 60 into a mixed glue solution and then emulsifying and granulating, the kaolin is modified through molten salt etching, the activated carbon loaded with zinc and magnesium metal oxides and nitrides is prepared and used as a base material, silica sol is used as an auxiliary agent, and the desulfurizer is prepared. Through emulsification and granulation, the sulfur capacity and the specific surface area of the desulfurizer are effectively improved, and the desulfurization efficiency of using the desulfurizer for desulfurization is also improved.

The invention discloses a lithium battery diaphragm coating based on a nano material and application thereof, and relates to the technical field of lithium battery diaphragms. The coating comprises the following raw materials in parts by weight: 15-25 parts of polystyrene maleic anhydride copolymer modified polyvinylidene fluoride, 10-20 parts of polystyrene, 2-4 parts of nano silicon nitride, 3-6 parts of a boehmite / aluminum oxide and silicon dioxide composite material, 1-2 parts of a dispersing agent and 65-90 parts of a solvent, according to the lithium battery diaphragm coating provided by the invention, the wettability and absorptivity of a diaphragm to an electrolyte are remarkably improved, meanwhile, the lithium battery diaphragm coating also has excellent thermal stability, and the diaphragm can be effectively prevented from thermal shrinkage or melting under a high-temperature condition, so that the safety performance of a battery is remarkably enhanced.

Provided are processes of filling features with method. The processes include deposition, etch, and clean operations using a molybdenum chloride (MoClx) compound. The MoClx compound may be controlled to selectively deposit on metal nitride features compared to dielectric, form plugs and crystals on dielectric materials, and perform a net etch of materials within the feature. Also provided are in-situ clean processes in which the MoClx compound is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoClx precursor may deposit an initial layer and / or fill a feature.

The invention discloses metal element-doped nano silicon carbon as well as a preparation method and application thereof, and relates to the field of negative electrode materials. The nano silicon carbon takes porous carbon as a carbon skeleton, and the porous carbon is sequentially attached with nano silicon and coated with a carbon material layer through a chemical vapor deposition method; the porous carbon is prepared by carbonizing resin containing metal nitride after alkali activation and pore forming, and the resin containing the metal nitride is prepared by condensation polymerization of a phenolic compound, an aldehyde compound and the metal nitride in the presence of a catalyst. The porous carbon is doped with the metal nitride in the resin polycondensation process, the conductivity of the nano silicon carbon is effectively improved, the powder resistance is reduced, holes in the surface of the porous carbon provide more expansion space for deposited nano silicon, a carbon material layer formed by subsequent deposition and coating provides a protection effect, the reaction between silicon and an electrolyte can be inhibited, and the service life of the nano silicon carbon is prolonged. A stable SEI film is formed, the cycling stability of the material is improved, the volume expansion rate of a pole piece is inhibited, and the cycling life and the stability of the battery are improved.

To provide a cubic boron nitride sintered body and a coated cubic boron nitride sintered body that can extend a tool life by having excellent wear resistance and chipping resistance.SOLUTION: In a cubic boron nitride sintered body including cubic boron nitride and a bonding phase, a content ratio of the cubic boron nitride and the bonding phase is within a specific range, the bonding phase comprises a Ti compound phase, an Al compound phase, and a phase containing an element W, a content ratio of the Ti compound phase, the Al compound phase, and the phase containing the element W is within a specific range, the phase containing the element W includes at least one kind selected from the group consisting of W2B and WB, and a ratio I2 / I1 is in a specific range, where I1 is the X-ray diffraction peak intensity of a (111) plane of cubic boron nitride and I2 is the sum of the X-ray diffraction peak intensities of a (211) plane of the W2B and a (110) plane of the WB in the bonding phase.SELECTED DRAWING: None

The invention relates to the field of cable materials, and provides a flexible flame-retardant polyolefin insulating material for a high-flexibility drag chain cable and a preparation method thereof.The flexible flame-retardant polyolefin insulating material comprises phosphorus-containing flame retardant surface modified boron nitride, polyphosphazene modified magnesium hydroxide nanowires, polyolefin matrix resin and the like. The phosphorus-containing flame retardant surface modified boron nitride is prepared by carrying out surface modification on hydroxyl modified hexagonal boron nitride through 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide and vinyl trimethoxy silane, and shows excellent flame retardant property and flexibility. The polyphosphazene modified magnesium hydroxide nanowire is prepared through silane coupling agent functionalization and polyphosphazene cross-linking polymerization, and has flame retardance and a reinforcing effect. The preparation method of the material comprises the steps of raw material premixing, melt blending, cooling granulation and extrusion molding. The material has the characteristics of flame retardance, high flexibility and the like, and is widely applied to dynamic high-flexibility cables in the fields of industrial automation equipment, robots, machine tool manufacturing, logistics conveying systems and the like.

The invention discloses a method for remote epitaxial growth of a nitride film on a silicon substrate, the nitride film and a semiconductor device.The method comprises the following steps that surface nitriding treatment is conducted on the silicon substrate, so that a Si3N4 layer is formed on the surface of the silicon substrate; a single-layer graphene layer is formed on the surface of the side, provided with the Si3N4 layer, of the silicon substrate; performing remote epitaxial growth of a nitride film on the single-layer graphene layer; wherein the lattice information of the nitride film is the same as the lattice structure information of the Si3N4 layer. By adopting the technical scheme provided by the invention, remote epitaxial growth of the nitride film on the silicon substrate can be realized.

An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

A high-stress, thermally-stable compressive nitride film is deposited on a semiconductor substrate. The compressive nitride film may be deposited by plasma-enhanced chemical vapor deposition (PECVD) under conditions that produce a compressive nitride film with high compressive film stress and with a minimal stress shift when exposed to a temperature greater than a deposition temperature of the compressive nitride film. In some implementations, the compressive nitride film is a silicon nitride film. The PECVD conditions may reduce a number of Si—H bonds in the silicon nitride to obtain improved thermal stability. In some implementations, the high-stress, thermally-stable nitride film is deposited on a backside of the semiconductor substrate for wafer bow compensation.

The invention discloses a nitride full-color integrated miniature light-emitting diode display chip and a preparation method thereof, a columnar or halfpace-shaped table surface is formed on the surface of a silicon substrate, and then an AlN buffer layer, an AlGaN stress modulation layer, an n-type GaN layer, an InGaN / GaN composite quantum well layer and a p-type conductive layer sequentially extend on the table surface of the silicon substrate to form a miniature light-emitting diode table surface; through stress release of the side wall of the mesa and stress modulation of the AlGaN layer, tensile stress distribution which is gradually reduced from the center of the mesa to the outer ring is formed in the n-type GaN layer, so that indium component distribution in the InGaN / GaN composite quantum well layer is regulated and controlled, and the micro light-emitting diode mesa covering three primary color wavebands of red, green and blue is formed. According to the chip structure disclosed by the invention, the red, green and blue three-primary-color sub-pixels are integrated, and the difficulty of a mass transfer process of the full-color micro light-emitting diode display chip is reduced. According to the invention, the preparation of the red, green and blue three-primary-color sub-pixels can be completed only by implementing an epitaxial process once, and the process flow is simplified.

The invention provides a high-performance nitrogen-containing hard alloy material based on a vanadium-titanium rare earth carbonitride solid solution and a preparation method of the high-performance nitrogen-containing hard alloy material, and belongs to the technical field of hard alloy cutting tool materials. Tungsten carbide of a hard phase is modified, meanwhile, the vanadium-titanium rare earth carbonitride solid solution and the boron quantum dot are introduced to modify the high-entropy alloy, through interaction of modified components, the hardness and transverse breaking strength of the hard alloy material are effectively improved, and meanwhile the phase granularity is reduced.

The invention belongs to the technical field of integrated circuits, and particularly relates to a nitride HEMT device with a light-emitting structure and a preparation method of the nitride HEMT device. The HEMT device comprises a heterojunction epitaxial wafer, a light-emitting structure, a grid electrode, a source electrode and a drain electrode. The heterojunction epitaxial wafer sequentially comprises a substrate, a buffer layer formed by III-group nitride, a channel layer and a barrier layer from bottom to top. The light-emitting structure is prepared through a selective area epitaxial growth technology and sequentially comprises a quantum well layer, a P-type nitride layer, a current expansion layer and a P-type electrode from bottom to top. Wherein the quantum well layer can also be used as a barrier layer, and the P-type electrode and the drain electrode are interconnected through metal. According to the invention, the drain electrode of the nitride device is connected with the P-type electrode of the light-emitting structure, so that when the device is turned on, the quantum well layer of the light-emitting structure emits light at the same time, photons are incident into the device body, electrons in various deep energy levels in the device body are effectively accelerated to break away from traps, the current collapse effect of the device is effectively inhibited, and the stability of the device is improved.

Provided herein are methods of depositing molybdenum (Mo) films. The methods involve depositing a thin layer of a molybdenum (Mo)-containing film such a molybdenum oxide, a molybdenum nitride, or a molybdenum oxynitride. The Mo-containing film is then converted to an elemental Mo film. A bulk Mo film may then be deposited on the elemental Mo film. In some embodiments, the process is performed at relatively low temperatures.

The invention discloses a gallium nitride device and a preparation method thereof. The gallium nitride device comprises a substrate; the channel layer is positioned on one side of the substrate; the composite barrier layer comprises a first barrier layer, a second barrier layer and a third barrier layer; the first barrier layer is located on the side, away from the substrate, of the channel layer; the second barrier layer is located on the side, away from the channel layer, of the first barrier layer; the second barrier layer is used as an etching barrier layer and is used for protecting the first barrier layer; the third barrier layer is located on the side, away from the first barrier layer, of the second barrier layer; a doped III-V group semiconductor layer and a gate electrode; the source electrode is located on the side, away from the channel layer, of the first barrier layer; and the drain electrode is positioned on one side, far away from the channel layer, of the first barrier layer. According to the technical scheme provided by the embodiment of the invention, in the process of etching the doped III-V group semiconductor layer, the first barrier layer at one side of the channel layer is prevented from being over-etched, so that the electrical performance of the gallium nitride device is improved.

Alloy elements are reasonably matched, N and nitrides are added to form elements such as tungsten W, vanadium V, niobium Nb, cobalt Co, rare earth RE and the like for microalloying smelting, a forged and rolled material finished product is subjected to proper heat treatment, and the stainless steel subjected to heat treatment has good heat treatment performance through metallographic observation. According to the stainless steel, nanoscale carbides are separated out in a solid solution state, and fine particles mainly containing nitrides are dispersed and separated out in crystals in a thermodynamic state, so that the material is strengthened and does not diffuse to a crystal boundary, and the room-temperature mechanical property and the high-temperature mechanical property of the material are greatly improved; and when the stainless steel material produced by the method is used for manufacturing related products, the thickness of the stainless steel material can be reduced, and the overall input of the stainless steel material is greatly reduced, so that the large-scale application of noble metal strategic resource nickel is saved, and the aims of saving resources, energy and investment are fulfilled.

The invention discloses a modified nickel-cobalt-aluminum ternary positive electrode material, a preparation method thereof and a lithium battery, the modified nickel-cobalt-aluminum ternary positive electrode material provided by the invention comprises a bulk phase material and a coating layer coating the surface of the bulk phase material, the coating layer is composed of boric acid and at least one of transition metal nitride containing effective metal and aluminum-containing metal oxide. According to the invention, at least one of the binary compound containing the effective metal or the aluminum-containing metal oxide and the boric acid are used as the composite coating source for composite coating, so that the coating effect of the nickel-cobalt-aluminum ternary positive electrode material is optimized, and the ultrahigh nickel-nickel-cobalt-aluminum ternary positive electrode material with better physical and chemical properties is prepared. Meanwhile, the problems that the material is poor in structural stability, high in residual alkali content, relatively low in capacity and poor in rate and cycle performance exertion are solved.

The invention relates to the technical field of organic silicon pouring sealants, and discloses a high-thermal-conductivity low-viscosity organic silicon pouring sealant and a preparation method thereof, and the sealant comprises the following raw materials by weight: 80-90 parts of alpha, omega-dihydroxy polydiethylsiloxane; 4 to 8 parts of polyphenyl siloxane; 100 to 120 parts of spherical aluminum nitride; 3 to 7 parts of epoxy butyl oleate; 0.8 to 1.2 parts of organic bentonite; 0.5 to 0.9 part of a titanate coupling agent; 0.8 to 0.9 part of dibutyltin dibutyrate; 0.15 to 0.20 part of dibutyltin oxide; 0.08 to 0.15 part of phosphotriester; the titanate coupling agent, the tris (2, 3-dibromopropyl) phosphate and the graphite powder are introduced into the raw materials, the graphite powder is subjected to surface modification treatment in the pretreatment stage, and the modified graphite powder is more firmly combined with a sealing compound matrix, so that the sealing compound can still keep stable performance at an extreme temperature; by integrating the respective characteristics of the raw materials, the sealing compound finished product disclosed by the invention has the advantage of high heat-conducting property while having low viscosity.

A seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 μm provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a core of group III nitride polycrystalline ceramics and a 0.05 to 1.5 μm encapsulating layer that encapsulates the core having surface voids filled and flattened by Al or Si oxide, nitride, oxynitride, or a mixture thereof. The seed crystal layer is provided by thin-film transfer of 0.1 to 1.5 μm of the surface layer of Si <111> single crystal with oxidation-induced stacking faults (OSF) of less than 10 defects / cm2.

The invention relates to a preparation method of a copper-doped carbon nitride nano composite material and application of the copper-doped carbon nitride nano composite material in electrocatalytic carbon dioxide reduction. The preparation method comprises the following steps: firstly, preparing a carbon nitride precursor, taking salt of metal copper as a source of the metal copper to obtain a copper-doped carbon nitride nano composite material, and applying the copper-doped carbon nitride nano composite material to electrocatalytic reduction of carbon dioxide to obtain ethanol. Results show that in a wide voltage range, the catalytic performance of the catalyst is obviously improved, which is mainly characterized in that lamellar graphite carbon nitride is used as a substrate, existence of pyridine nitrogen is beneficial to activation of carbon dioxide to generate CO *, copper in a monatomic form can promote a C-C coupling process, and then a multi-carbon product ethanol is generated; and the lamellar morphology can utilize catalytic active sites to the greatest extent, so that the catalytic performance is greatly improved.

The invention provides a preparation method of a high-entropy cutter for titanium alloy cutting, and belongs to the technical field of metal cermes.The preparation method comprises the steps that a metal ceramic matrix with a high-entropy alloy phase on the surface layer is prepared; carrying out surface activation treatment on the metal ceramic matrix; depositing a high-entropy alloy coating on the surface of the metal ceramic matrix subjected to surface activation treatment; and depositing a high-entropy nitride coating on the surface of the high-entropy alloy coating to obtain the high-entropy cutter. The high-entropy cutter prepared through the method can meet stable cutting of titanium alloy at the cutting temperature of 1000 DEG C and has excellent high-temperature oxidation resistance and high-temperature stability, the service life of the titanium alloy machining cutter is prolonged, and the machining cost of the titanium alloy is reduced. The invention further provides the high-entropy cutter for cutting the titanium alloy.

III-Nitrides epilayer(s) are grown “remotely” on a 2D material layer, such as graphene or h-BN, aBN, or polycrystalline BN coated crystalline substrate, where the Nitride-face surface of the epilayer faces the 2D material. A small mechanical force using a 2D material-based layer transfer process is used to separate the III-Nitrides epilayer(s) at their interface with the 2D material layer. Alternatively, the III-Nitrides epilayer is removed by mechanical force from a substrate with the assistance of a first thermal release tape and an optional metal layer on the epilayer and then a second thermal release tape and / or optional metal layer, is applied to the Nitride-face of the epilayer, the first thermal release tape and first metal layer are removed, the Ga-face surface is bonded to a substrate, and the second thermal release tape is removed. The resulting Nitride-face surface of the epilayer has high quality. A HEMT may be formed using the above structures.

The invention relates to low-emissivity coated glass and a preparation method thereof. The low-emissivity coated glass comprises a glass substrate and a coating layer arranged on one side of the glass substrate, the coating layer comprises a base layer, a first seed layer, a first functional layer, a first barrier layer, a second functional layer, a second barrier layer, a second seed layer, a third functional layer, a third barrier layer and a top dielectric layer which are sequentially coated outwards from one side of the glass substrate. According to the invention, the barrier layer is controlled to adopt the metal simple substance with excellent compactness and stability and high melting point or the barrier layer is controlled to adopt the nitride, the silicon nitride, the silicon carbonitride or the silicon boron nitride and the like of the metal material, so that the function layer is protected from being oxidized, the radiation rate and the reflectivity are low, and the service life is long. And stability is achieved in the heat treatment process.

The invention discloses a device and method for improving the laser welding quality of a large cylindrical battery tab, belongs to the technical field of new energy automobile battery welding, and aims to solve the problems of low material absorption rate, poor welding protection effect and the like in the prior art. The device comprises a fastening pressing block, the fastening pressing block fixes a battery cell and a collector plate, the fastening pressing block is provided with an internal gas passage, a blowing nozzle of the fastening pressing block is sequentially connected with a plasma activator, a gas heating device, a gas flow controller and a protective gas cylinder, and an exhaust nozzle of the fastening pressing block is connected with an exhaust device. Nitrogen blown out through the blowing nozzle sweeps over the surface of a to-be-welded area of the collector plate, a protective air curtain is formed in the to-be-welded area, the plasma activator conducts ionization activation on the nitrogen, formed nitrogen free radicals and the to-be-welded surface form a nitride layer in a chemical mode, and the laser absorption rate of the material can be remarkably improved. The reaction between the preheated workpiece surface and nitrogen free radicals can be accelerated, and a dual synergistic mechanism of physical preheating and chemical activation is formed.

According to the composite protective coating for the bolt surface, the preparation method and the application, the composite coating takes a bolt of a common model of an iron tower as a substrate, and a cathode arc ion plating technology and a magnetron sputtering technology are combined; the preparation method comprises the four main steps of substrate surface pretreatment, metal bonding layer preparation, metal nitride bearing layer preparation and surface molybdenum disulfide solid self-lubricating layer preparation. According to the method, reliable preparation of the composite coating on the complex thread surface of the bolt is achieved, the anti-loosening capacity of the bolt is remarkably improved through the low friction coefficient, good bearing capacity and excellent wear resistance, and meanwhile the composite coating further has good corrosion resistance and has wide application prospects in iron towers for communication, electric power and the like.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.