2079 results about "Nitride" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention relates to the technical field of non-oxide ceramic-based composite materials, in particular to Fe-N-based high-entropy nitride ceramic as well as a preparation method and application thereof. The method comprises the following steps: by taking iron powder as a sintering aid, mixing (Hf < 0.2 > Zr < 0.2 > Ti < 0.2 > Nb < 0.2 > Ta < 0.2 >) N high-entropy powder with the iron powder, and carrying out ball milling treatment to obtain ball-milled powder; and under the oxygen-free condition, the ball-milled powder is subjected to sintering treatment, transformation from the loose ball-milled powder to compact and uniform solid solution ceramic is achieved in the sintering treatment process, and the Fe-N-based high-entropy nitride ceramic is obtained. According to the method, a nitride thermal reduction method sintering process is adopted, energy is provided for densification of the Fe-N-based high-entropy nitride ceramic by utilizing reaction heat release of the (Hf0. 2Zr0. 2Ti0. 2Nb0. 2Ta0. 2) N high-entropy powder and the iron powder, the sintering temperature is reduced, energy is saved, and the defect that densification needs to be carried out under a high-temperature condition in the prior art is overcome.

The invention relates to the technical field of diamond saw blades, in particular to a laser welding diamond saw blade for ultra-narrow slit cutting and a preparation method of the laser welding diamond saw blade. The copper-cobalt-tin alloy material comprises the following raw materials: copper-cobalt-tin alloy powder, tungsten carbide powder, titanium-aluminum nitride, spherical cobalt powder, rare earth yttrium powder, ferrophosphorus powder and diamond abrasive particles. According to the preparation method, the core of the preparation method lies in the combination of powder metallurgy prefabrication of the tool bit and the precise laser welding process, especially the innovative laser welding process, and the prepared diamond saw blade is high in welding seam strength, narrow in heat affected zone and extremely small in matrix deformation; the problems of base body deformation, insufficient welding seam strength, short service life and the like of a traditional saw blade in the ultra-narrow seam cutting process are solved, and the saw blade is perfectly suitable for ultra-narrow seam cutting scenes with extremely high requirements for precision and stability.

The invention discloses a preparation method and application of a zinc-bromine flow battery positive electrode material, and belongs to the field of zinc-bromine flow batteries. The preparation method comprises the following steps: firstly, cleaning and activating a carbon-based three-dimensional conductive network substrate by adopting plasmas, performing oxygen / argon plasma etching, and performing chemical vapor deposition on carbon to prepare three-dimensional porous carbon; then growing a metal oxide nanocrystalline array on the three-dimensional porous carbon by a hydrothermal method, and carrying out ammonia gas calcination to convert the metal oxide nanocrystalline array into a metal nitride nanocrystalline array; then preparing an electro-deposition solution containing tin bismuth salt and an aniline-bromine source polymerization solution, and constructing Sn-Bi bimetallic nanoparticles and a polyaniline-bromine complex layer on the metal nitride nanocrystalline array / three-dimensional porous carbon precursor through electro-deposition and electro-polymerization in sequence to finally prepare the high-performance zinc-bromine battery positive electrode material. The positive electrode material has high conductivity, excellent Br2 / Br <-> catalytic activity and structural stability, and the coulombic efficiency, the voltage efficiency and the energy efficiency of the battery are remarkably improved.

Disclosed is a semiconductor device comprising a substrate including a first surface and a second surface that are opposite to each other, a via structure that penetrates the substrate, a first passivation pattern disposed on the first surface of the substrate and extending onto an upper sidewall of the via structure, and a second passivation pattern disposed on the first passivation pattern and exposing an uppermost surface of the first passivation pattern. At least a portion of the second passivation pattern is externally exposed. The first passivation pattern includes at least one selected from oxide and silicon oxide. The second passivation pattern includes at least one selected from nitride and silicon nitride.

A method of fabricating a heterostructure includes providing a substrate, forming a piezoelectric layer supported by the substrate, the piezoelectric layer including a III-nitride material or an alloy thereof, and annealing the piezoelectric layer at an anneal temperature higher than a temperature at which forming the piezoelectric layer is implemented by about 50 degrees Celsius to about 400 degrees Celsius.

The invention provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, and relates to the technical field of laser chips, the surface-emitting gallium nitride VCSEL laser chip comprises a substrate, a low-temperature nucleating layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region, a polarization enhanced tunnel junction and the like, the defect blocking layer adopts an in-situ silicon nitride nano-porous mask layer to be matched with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, through pulse type lateral epitaxial overgrowth annihilation penetrating dislocation, and the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system to be combined with a hydrogen etching interruption modification technology, so that thick film growth with zero cracks and high reflectivity is realized; a polarization enhanced tunneling junction is used at the top to replace ITO, and the hole tunneling probability is enhanced by piezoelectric polarization in InGaN, so that efficient current injection with low working voltage and no absorption loss is realized, the dislocation density and the device voltage are remarkably reduced, and the yield of an epitaxial wafer and the photoelectric conversion efficiency are improved.

The invention relates to the technical field of cable manufacturing, and discloses a heat preservation frost crack prevention cable which comprises a conductor, an insulating layer and a double-layer co-extrusion functional sheath wrapping the outer side of the insulating layer, and the sheath is composed of a cold-resistant stable layer and a water stop gate layer which are arranged in sequence; nano silicon nitride dispersion liquid is added into the cold-resistant stable layer, polytetrafluoroethylene micro-powder is added into the water stop gate layer, and the nano silicon nitride dispersion liquid and the polytetrafluoroethylene micro-powder form a double protection system of physical blocking and structural supporting, so that interlayer bonding force is strengthened, interlayer gaps are reduced, and a moisture invasion path is blocked. The preparation method comprises the steps of raw material pretreatment, conductor cleaning and drying, insulating layer extrusion, plasma activation, double-layer co-extrusion and finished product drying. The cable solves the problem that a multi-layer sheath of an existing cable is prone to frost heaving cracking due to water infiltration, the frost heaving damage resistance is remarkably improved, the cable is suitable for the high-cold and high-humidity environment, and stable power transmission is guaranteed.

The invention discloses a shallow trench isolation structure and a preparation method thereof, and belongs to the technical field of semiconductors, and the preparation method comprises the steps: providing a semiconductor substrate, and sequentially forming a liner oxide layer and a nitride layer on the semiconductor substrate; forming grooves in the liner oxide layer, the nitride layer and the semiconductor substrate; the grooves extend into the semiconductor substrate from the nitride layer and divide the semiconductor substrate into a plurality of active regions; performing back etching on the pad oxide layer and the nitride layer on the two sides of the groove so as to expose the top surface of the active region of the semiconductor substrate close to the top of the side wall of the groove; forming an epitaxial layer on the inner wall of the groove and the exposed top surface of the active region of the semiconductor substrate; smoothing the top corner of the exposed active region of the semiconductor substrate to form a line oxide layer; and forming an isolation region in the groove, performing planarization processing on the isolation region to expose the nitride layer, and removing the nitride layer.

A semiconductor device includes a gate structure. The gate structure, form bottom to top, includes a gate insulating layer, a first barrier layer and a gate conductive layer. The gate insulating layer is disposed on a substrate. The first barrier layer is disposed on the gate insulating layer. The first barrier layer includes a transition metal nitride, and a concentration of nitrogen atom of a portion of the first barrier layer adjacent to the gate insulating layer is higher than a concentration of nitrogen atom of a portion of the first barrier layer away from the gate insulating layer. The gate conductive layer is disposed on the first barrier layer.

The application discloses a hydrodesulfurization catalyst and a preparation method and application thereof. The hydrodesulfurization catalyst comprises a carrier and a second active metal component; the carrier comprises a first active metal nitride, a first active metal carbide, boron oxide and aluminum oxide; wherein the molar ratio of the first active metal nitride to the first active metal carbide, in terms of the first active metal, is 1:0.15-0.25. The hydrodesulfurization catalyst has the characteristics of good macromolecular diffusion performance, strong desulfurization capacity and good carbon deposition resistance. The hydrodesulfurization catalyst is particularly suitable for a residual oil hydrodesulfurization treatment process and has good desulfurization activity and stability.

The invention discloses a smelting method of a large-size Fe-based high-temperature alloy for a gas turbine. The smelting method comprises the following two steps: casting a metal raw material into a 710mm electrode bar through a vacuum induction furnace, and then feeding the electrode bar into a consumable electrode vacuum furnace for remelting to produce a 810mm steel ingot. According to the method, the vacuum induction melting and vacuum consumable remelting (VIM and VAR) combined process is adopted for smelting, so that the burning loss of the Ti element can be effectively controlled to ensure that the content of the Ti element reaches the standard, excessive generation of Ti-series carbonitride can be avoided, and the negative influence on the purity of the molten steel is fundamentally avoided.

The present invention provides a substrate with a coating comprising, in order: a) a substrate; b) a primer layer comprising a first transition metal or an oxide thereof; c) one or more corrosion resistant layers, each layer comprising a first sub-layer, a second sub-layer and a third sub-layer, the sub-layers comprising the first transition metal and a second transition metal, where the ratio of the first transition metal and the second transition metal varies between the sub-layers; d) a conductive layer comprising the second transition metal, or a nitride thereof and / or an oxide thereof. The invention also describes a method for producing such a substrate with a coating. The coated substrate has good electrical conductivity and corrosion resistance.

The present: invention addresses the problem of providing a silicon nitride etching liquid composition which is capable of selectively etching Si3N4 with a practical etching selectivity with respect to SiO2, while suppressing regrowth of SiO2, and which is also capable of suppressing pattern collapse of an SiO2 film in the production of a 3D nonvolatile memory cell. A silicon nitride etching liquid composition for producing a 3D nonvolatile memory cell, which contains phosphoric acid, one or more silane coupling agents and water, but which does not contain ammonium ions.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

The invention discloses a preparation method of a high-hydrophobicity liquid lead bismuth alloy nitride coating capable of increasing a high-temperature contact angle, which comprises the following steps of: pretreating a substrate, depositing a FeCrAl coating on the surface of the substrate by adopting magnetron sputtering, and nitriding the FeCrAl coating to obtain a nitride coating; the invention further discloses the high-hydrophobicity liquid lead bismuth alloy nitride coating for improving the high-temperature contact angle. According to the preparation method, the FeCrAl coating is nitrided, so that the surface strength and corrosion resistance of the FeCrAl coating are improved, the formed FeCrAl nitride layer with a compact structure has high lyophobicity on the liquid lead bismuth alloy, the material surface is in a non-wetting state all the time, the liquid lead bismuth alloy can be effectively prevented from permeating into an alloy matrix, and the service life of the material is prolonged. The material is suitable for being used as a cladding material of a lead-cooled fast neutron reactor.

The invention relates to a multi-airflow alternating temperature calcining device for ultra-long nitride single crystal nanofibers. The multi-airflow alternating temperature calcining device comprises a reaction furnace; the mechanical vacuum pressure gauge and the exhaust port are arranged at the top of the reaction furnace; the reaction furnace chamber is arranged in the reaction furnace; the multi-reaction-zone graphite furnace body is arranged in the reaction furnace chamber and comprises a first low-temperature zone, a second high-temperature zone and a third low-temperature zone which are sequentially arranged from bottom to top and are not in contact with one another; the electromagnetic heating controller is arranged on the periphery of the multi-reaction-area graphite furnace body; the graphite boat is movably arranged in the multi-reaction-area graphite furnace body; the movable alumina crucible is arranged in the graphite boat; the graphite columns are arranged at the top and the bottom of the multi-reaction-zone graphite furnace body; the hydraulic cylinder is connected with the graphite column; and a control assembly. Compared with the prior art, the method has the advantages that the nitridation reaction process can be accurately controlled, the fiber quality and the crystal integrity can be improved, and independent and accurate temperature control can be realized.

The invention relates to the technical field of high-molecular compound preparation, in particular to a high-molecular compound preparation method and system.The method comprises the steps that distilled water and boron nitride are added into a container containing silane monomers, stirring reaction is conducted for 3-5 h, and a hyperspectral image of a mixed solution in the container in the stirring reaction process is collected; the method comprises the following steps: acquiring spectral similarity factors of matched pixels in a hyperspectral image, judging the fullness degree of a stirring reaction according to the distribution characteristics of the spectral similarity factors of the pixels, completing the stirring reaction, mixing the prepared boron nitride modified organic silicon resin, silanol, polyester resin and a crosslinking catalyst, continuously reacting for 2-4 hours at 110-130 DEG C, adding an organic solvent, and uniformly stirring to obtain the boron nitride modified organic silicon resin. The solid content of the modified polyester resin is 62-66%. The invention aims to improve the performance and prolong the service life of the prepared modified polyester resin, and realizes the preparation method of the high-molecular compound.

Provided herein are methods of depositing molybdenum (Mo) films. The methods involve depositing a thin layer of a molybdenum (Mo)-containing film such a molybdenum oxide, a molybdenum nitride, or a molybdenum oxynitride. The Mo-containing film is then converted to an elemental Mo film. A bulk Mo film may then be deposited on the elemental Mo film. In some embodiments, the process is performed at relatively low temperatures.

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

A method for producing a substrate comprising a buried oxide layer (1, 10, 20) or a buried nitride layer for the production of electronic components, comprising at least one step for depositing an oxide layer (1, 10, 20) or a nitride layer on a donor substrate (2, 11, 21) and / or an acceptor substrate, and a step for establishing contact between the donor substrate and the acceptor substrate (9, 14, 22), further comprising at least: a first heat treatment of the oxide layer (1, 10, 20) or the nitride layer deposited on the donor substrate (2, 11, 21) and / or the acceptor substrate (9, 14, 22) before connecting the donor substrate (2, 11, 21) with the Acceptor substrate (9, 14, 22) and a second heat treatment of the substrate, which consists of the acceptor substrate (9, 14, 22), the oxide layer (1, 10, 20) or the nitride layer and the entire donor substrate (2, 11, 21) or a part thereof, at a temperature,which is the same as or higher than the temperature applied in the first heat treatment, wherein the second heat treatment is a compression heat treatment, wherein the first heat treatment consists of applying a temperature of 600 to 1000 °C for a period of a few minutes to a few hours in a non-oxidizing inert gas or a mixture of inert gases.

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and / or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.

The invention provides a positive electrode active material and a preparation method thereof, a positive plate and a battery. An inner slow-release layer in the positive electrode active material coats at least part of the surface of a positive electrode active material main body, and an outer inhibition layer coats at least part of the surface of the inner slow-release layer; the inner slow-release layer comprises lithium carbonate and M metal oxide, and the outer inhibition layer comprises at least one of nitride, fluoride and oxide of inhibition elements; the inhibiting elements comprise at least two elements in VA, IVA family, IIIA family, IIA family and IVB family. The lithium carbonate in the inner slow-release layer can release non-flammable gas mainly containing CO2, the metal oxide can inhibit release of lattice oxygen in the positive electrode active material main body at high temperature, and the proportion of combustible gas is reduced. The lithium carbonate is provided with a temperature decomposition window, so that the release time of carbon dioxide pressure relief for the first time can be accurately controlled. And the outer inhibition layer can avoid the contact between the positive electrode active material main body and the electrolyte, so that the proportion of the combustible gas is further reduced.

The application belongs to the technical field of porous adsorption membrane materials, and discloses a titanium lithium ion porous adsorption membrane material and a self-assembly preparation method and application thereof. The preparation method comprises the following steps: dissolving a film-forming polymer in a dispersion liquid containing MXene nanosheets to form a uniform precursor liquid; the MXene nanosheet is a carbide, nitride or carbonitride of a transition metal with a single-layer structure; dispersing a titanium lithium composite oxide in the precursor liquid to form a casting solution; coating the casting solution on a support, and then performing phase inversion by using pure water to obtain a matrix film; placing the matrix film in a lithium elution liquid for immersion washing, replacing lithium ions in the matrix film, and causing a self-assembly reaction of the titanium lithium composite oxide in the matrix film, so that the titanium lithium ion porous adsorption membrane material is obtained. The application innovatively introduces MXene nanosheets and a polysulfone matrix film, fixes the MXene nanosheets on the polysulfone matrix film as an in-situ growth substrate of the titanium lithium composite oxide, and the obtained membrane material has a high adsorption capacity.

A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the III-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.

The invention relates to the technical field of cable production, and discloses a new energy charging heat-conducting flame-retardant cable which sequentially comprises a conductor layer, a heat-conducting insulating layer, a self-healing layer, a shielding layer, a mechanical enhancement layer and a flame-retardant outer sheath layer from inside to outside. The conductor layer is formed by a plurality of stranded tin-plated copper wires or nickel-plated copper wires; the heat-conducting insulating layer is composed of a crosslinked polyethylene matrix, a two-dimensional heat-conducting filler and phase-change temperature-adjusting microcapsules, the two-dimensional heat-conducting filler comprises a mixture of boron nitride nanosheets oriented by an electric field and graphene, and the mass fraction of the filler is 40%-55%; a core material of the phase-change temperature-adjusting microcapsule is a compound of paraffin and stearic acid. According to the scheme, trace rare earth and silver elements are introduced into the conductor to form a Cu-Ag-RE solid solution structure, so that the crystal integrity and the oxidation resistance of the conductor are remarkably improved; the structure still keeps excellent conductivity and bending resistance at high temperature, so that the cable can stably operate for a long time in a high-temperature and strong ultraviolet environment during charging, and the conductivity efficiency is improved.

The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.

The invention discloses a resistive random access memory structure and a manufacturing method thereof. The resistive random access memory structure comprises a bottom electrode, a resistive random layer and a top electrode which are sequentially stacked from bottom to top, the upper surface of the bottom electrode is in Schottky contact with the lower surface of the resistive layer, and the lower surface of the top electrode is in ohmic contact with the upper surface of the resistive layer; the resistive layer is a single oxide film layer; the bottom electrode and the top electrode are made of the same metal nitride, and the atomic number ratio of metal elements to nitrogen elements in the top electrode is larger than the atomic number ratio of metal elements to nitrogen elements in the bottom electrode. The structure of the memory can be simplified, and the process complexity and the manufacturing cost can be reduced.

The invention discloses non-quenched and tempered steel for an automobile piston and a production process of the non-quenched and tempered steel. The steel comprises the following chemical components in percentage by weight: 0.37%-0.40% of C, 0.60%-0.75% of Si, 1.40%-1.50% of Mn, less than or equal to 0.025% of P, 0.020%-0.040% of S, 0.10%-0.20% of Cr, 0.012%-0.025% of Alt, 0.08%-0.13% of V, 0.015%-0.030% of Ti, less than or equal to 0.05% of Mo, less than or equal to 0.10% of Ni, less than or equal to 0.10% of Cu, 0.015%-0.020% of N and the balance of Fe and inevitable impurities, and the ratio of Alt to N is 0.6-1.0. The RH-LF process is innovatively developed, and stable control over the nitrogen content, zero blockage of a water gap and reduction of bending deformation of steel are achieved in cooperation with the manganese nitride alloy, nitrogen control through bottom blowing of nitrogen, the Ca alloying process and the rolling heat preservation process.

The invention relates to a low-thermal-resistance phase change heat conduction material and a preparation method thereof, and belongs to the technical field of thermal interface materials. The phase-change-resistant heat conduction material comprises the following components in percentage by weight: 22 to 30 percent of porous BN-paraffin phase change agent, 8.5 to 10.2 percent of nano aluminum nitride, 3.5 to 4.1 percent of reactive diluent and the balance of room-temperature cured silicone rubber, according to the porous BN-paraffin phase change agent, porous BN serves as a carrier, phase change paraffin is packaged in pores, and compared with the prior art, the porous BN-paraffin phase change agent has the advantages that the pore wall of the packaged BN serves as a thermal bridge, the contact probability between the phase change agents is increased, rapid diffusion of heat in a composite material is promoted, phase change latent heat of the paraffin is fully released and conducted, and the phase change performance of the phase change agent is improved. Not only is the problem of paraffin leakage solved, but also the thermal resistance is obviously reduced.