3700 results about "Nitride" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

A method for creating polycrystalline silicon nitride fibers is discussed. The method includes dispersing silicon nitride powder to create dispersed silicon nitride powder. The dispersed silicon nitride powder is classified to create classified fine silicon nitride powder. Likewise, a sintering aid is dispersed to create a dispersed sintering aid and then classified to create a classified sintering aid. A plasticizer, a binder, and the classified sintering aid are added to the classified fine silicon nitride powder to define a compound. The compound is mixed to create a mixed slurry, which is then dried to create a material. The material is extruded through a nozzle that is less than 40 micrometers in diameter to create a preform, which is then sintered to create the polycrystalline silicon nitride fibers.

The invention discloses a lithium battery diaphragm coating based on a nano material and application thereof, and relates to the technical field of lithium battery diaphragms. The coating comprises the following raw materials in parts by weight: 15-25 parts of polystyrene maleic anhydride copolymer modified polyvinylidene fluoride, 10-20 parts of polystyrene, 2-4 parts of nano silicon nitride, 3-6 parts of a boehmite / aluminum oxide and silicon dioxide composite material, 1-2 parts of a dispersing agent and 65-90 parts of a solvent, according to the lithium battery diaphragm coating provided by the invention, the wettability and absorptivity of a diaphragm to an electrolyte are remarkably improved, meanwhile, the lithium battery diaphragm coating also has excellent thermal stability, and the diaphragm can be effectively prevented from thermal shrinkage or melting under a high-temperature condition, so that the safety performance of a battery is remarkably enhanced.

Provided are processes of filling features with method. The processes include deposition, etch, and clean operations using a molybdenum chloride (MoClx) compound. The MoClx compound may be controlled to selectively deposit on metal nitride features compared to dielectric, form plugs and crystals on dielectric materials, and perform a net etch of materials within the feature. Also provided are in-situ clean processes in which the MoClx compound is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoClx precursor may deposit an initial layer and / or fill a feature.

The invention discloses metal element-doped nano silicon carbon as well as a preparation method and application thereof, and relates to the field of negative electrode materials. The nano silicon carbon takes porous carbon as a carbon skeleton, and the porous carbon is sequentially attached with nano silicon and coated with a carbon material layer through a chemical vapor deposition method; the porous carbon is prepared by carbonizing resin containing metal nitride after alkali activation and pore forming, and the resin containing the metal nitride is prepared by condensation polymerization of a phenolic compound, an aldehyde compound and the metal nitride in the presence of a catalyst. The porous carbon is doped with the metal nitride in the resin polycondensation process, the conductivity of the nano silicon carbon is effectively improved, the powder resistance is reduced, holes in the surface of the porous carbon provide more expansion space for deposited nano silicon, a carbon material layer formed by subsequent deposition and coating provides a protection effect, the reaction between silicon and an electrolyte can be inhibited, and the service life of the nano silicon carbon is prolonged. A stable SEI film is formed, the cycling stability of the material is improved, the volume expansion rate of a pole piece is inhibited, and the cycling life and the stability of the battery are improved.

The invention discloses a nitride full-color integrated miniature light-emitting diode display chip and a preparation method thereof, a columnar or halfpace-shaped table surface is formed on the surface of a silicon substrate, and then an AlN buffer layer, an AlGaN stress modulation layer, an n-type GaN layer, an InGaN / GaN composite quantum well layer and a p-type conductive layer sequentially extend on the table surface of the silicon substrate to form a miniature light-emitting diode table surface; through stress release of the side wall of the mesa and stress modulation of the AlGaN layer, tensile stress distribution which is gradually reduced from the center of the mesa to the outer ring is formed in the n-type GaN layer, so that indium component distribution in the InGaN / GaN composite quantum well layer is regulated and controlled, and the micro light-emitting diode mesa covering three primary color wavebands of red, green and blue is formed. According to the chip structure disclosed by the invention, the red, green and blue three-primary-color sub-pixels are integrated, and the difficulty of a mass transfer process of the full-color micro light-emitting diode display chip is reduced. According to the invention, the preparation of the red, green and blue three-primary-color sub-pixels can be completed only by implementing an epitaxial process once, and the process flow is simplified.

Provided herein are methods of depositing molybdenum (Mo) films. The methods involve depositing a thin layer of a molybdenum (Mo)-containing film such a molybdenum oxide, a molybdenum nitride, or a molybdenum oxynitride. The Mo-containing film is then converted to an elemental Mo film. A bulk Mo film may then be deposited on the elemental Mo film. In some embodiments, the process is performed at relatively low temperatures.

The invention discloses a device and method for improving the laser welding quality of a large cylindrical battery tab, belongs to the technical field of new energy automobile battery welding, and aims to solve the problems of low material absorption rate, poor welding protection effect and the like in the prior art. The device comprises a fastening pressing block, the fastening pressing block fixes a battery cell and a collector plate, the fastening pressing block is provided with an internal gas passage, a blowing nozzle of the fastening pressing block is sequentially connected with a plasma activator, a gas heating device, a gas flow controller and a protective gas cylinder, and an exhaust nozzle of the fastening pressing block is connected with an exhaust device. Nitrogen blown out through the blowing nozzle sweeps over the surface of a to-be-welded area of the collector plate, a protective air curtain is formed in the to-be-welded area, the plasma activator conducts ionization activation on the nitrogen, formed nitrogen free radicals and the to-be-welded surface form a nitride layer in a chemical mode, and the laser absorption rate of the material can be remarkably improved. The reaction between the preheated workpiece surface and nitrogen free radicals can be accelerated, and a dual synergistic mechanism of physical preheating and chemical activation is formed.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The invention discloses a manufacturing method of a semiconductor structure, which belongs to the technical field of semiconductors, and comprises the following steps: providing a substrate, and sequentially forming a pad oxide layer and a pad nitride layer on the substrate; etching a part of the pad oxide layer, the pad nitride layer and the substrate to form a shallow trench; an insulating medium is deposited in the shallow trench, the insulating medium is planarized for the first time, and the insulating medium is flush with the pad nitride layers on the two sides; performing micro-etching treatment on the pad nitriding layer to form a micro-structure layer, and performing micro-etching by adopting a weak physical sputtering mode; oxidizing the pad nitride layer to form an intermediate oxide layer; equivalently removing the intermediate oxide layer and part of the insulating medium; repeating the micro-etching treatment, the oxidation treatment and the equivalent removal step until the pad nitride layer is removed; and removing the pad oxide layer and a part of the insulating medium. According to the manufacturing method of the semiconductor structure provided by the invention, the phenomenon that the corner edge of the shallow trench isolation structure is sunken can be avoided, and the performance of the semiconductor structure is improved.

The invention relates to a high-compaction lithium iron phosphate positive electrode material, a preparation method thereof and a lithium ion battery, and belongs to the technical field of batteries, the method adopts a two-step synthesis method, the first step adopts ferrous phosphate high-grinding sintering to prepare first-sintering large particles, and adopts in-situ doped iron phosphate low-grinding to prepare first-sintering small particles; 2, performing high grinding on the first-fired large particles, performing low grinding on the first-fired small particles, accurately controlling the sizes of the small particles, and stripping C3N4 through grinding to form g-C3N4; the large and small particles are mixed according to a certain mass ratio, and then secondary sintering is carried out to prepare the high-compaction high-capacity long-circulation lithium iron phosphate material, the advantages of different precursors are utilized, the particle composition is optimized, and the roundness of the large and small particles is better; meanwhile, the nitrogen-doped carbon layer is prepared by taking defect-type graphene and high-molecular organic nitride which are converted from C3N4 in a secondary sintering process as carbon sources, so that the conductivity and the cycle performance of the material are improved.

The invention relates to the technical field of composite catalyst materials, in particular to a ferrocobalt bimetal hydroxide / BCN composite material and a preparation method and application thereof.The preparation method comprises the steps that cobalt nitrate and ferric nitrate are used for preparing a metal salt solution, sodium carbonate and sodium hydroxide are used for preparing a precipitant solution, a B-doped carbon nitride BCN material is added into the metal salt solution to form a uniform suspension, and the suspension is dried to obtain the ferrocobalt bimetal hydroxide / BCN composite material; dropwise adding the precipitant solution into the suspension to obtain a precursor solution, performing hydrothermal reaction on the precursor solution, and performing centrifugal impurity removal and drying to construct a heterostructure between layered double hydroxide and BCN in situ to obtain the Co-Fe LDH-coated BCN composite material. Through boron doping and heterostructure construction, the charge separation capacity of graphite carbon nitride is enhanced, the electron migration efficiency is improved through a heterointerface structure, the metal ion release amount and the cycle stability are controlled, and the catalytic performance is remarkably improved.

The present invention belongs to the technical field of ceramic material preparation methods, and specifically relates to a lead-free piezoelectric ceramic, its preparation method, and application. The lead-free piezoelectric ceramic is a KNN-based lead-free piezoelectric ceramic or a BT-based lead-free piezoelectric ceramic having a perovskite structure; the KNN-based lead-free piezoelectric ceramic is prepared by doping gallium nitride with potassium sodium niobate (KNN) ceramic as the matrix, and the chemical formula is 0.955 (K 0.48 Na 0.52 )Nb 0.98 Sb 0.02 O3‒0.045Bi 0.5 Na 0.5 ZrO3‒0.75mol% GaN; The BT-based lead-free piezoelectric ceramic is prepared by doping gallium nitride with barium nitride (BT) as the matrix, and the chemical formula is (Ba 0.85 Ca 0.15 )(Ti 0.9 Zr 0.1 ) O‒1.75mol% GaN; the lead-free piezoelectric ceramic has a dense structure, is lead-free, and exhibits excellent electrochemical properties. The preparation method for the lead-free piezoelectric ceramic is simple, low-cost, pollution-free, and utilizes readily available raw materials. The lead-free piezoelectric ceramic can be used to prepare energy harvesters and has significant application value.

A memory device includes a bit line structure disposed over a semiconductor substrate, and a lower capacitor contact disposed over the semiconductor substrate and adjacent to the bit line structure. The memory device also includes a first nitride spacer and a second nitride spacer disposed between the bit line structure and the lower capacitor contact. The memory device further includes a capacitor disposed over the first nitride spacer and the second nitride spacer. In addition, the memory device includes a first oxide liner and a second oxide liner disposed between the first nitride spacer and the second nitride spacer. An air gap is between the first oxide liner and the second oxide liner.

The invention relates to the technical field of water electrolysis hydrogen production, in particular to a self-supporting hollow carbon membrane electrode and a preparation method and application thereof.The preparation method comprises the following steps that a self-supporting hollow carbon nanofiber membrane with metal M and metal M compound heterojunction is prepared through a coaxial electrostatic spinning technology; the self-supporting electrode with a high specific surface area and a rapid mass transfer channel is formed by regulating and controlling the flow rate of the spinning solution of the outer layer and the inner layer and a high-temperature carbonization process, the metal M is selected from one of iron, cobalt, nickel, manganese and molybdenum, and the metal M compound is one of oxide, hydroxide, carbide, nitride, phosphide and chalcogenide. Compared with the prior art, the self-supporting hollow carbon membrane electrode disclosed by the invention has good mechanical stability, good hydrophilic and hydrophobic properties and excellent HER and OER bifunctional catalytic activity, and can be used for efficiently and completely decomposing water.

The invention relates to a preparation method and application of a cobalt-doped porous carbon nitride nanosheet, and the preparation method comprises the following steps: (1) taking a nitrogen source and a cobalt source as raw materials, grinding the nitrogen source and the cobalt source, uniformly mixing, calcining at high temperature, naturally cooling to room temperature, washing the calcined substances of the nitrogen source and the cobalt source, and drying in vacuum to obtain the cobalt-doped carbon nitride nanosheet; and (2) dispersing the cobalt-doped carbon nitride nanosheet obtained in the step (1) in hydrazine hydrate for heating reaction, washing the cobalt-doped carbon nitride nanosheet to be neutral after the heating reaction is finished, and finally performing vacuum drying to obtain the cobalt-doped porous carbon nitride nanosheet. The cobalt-doped porous carbon nitride nanosheet prepared by the method disclosed by the invention is a catalytic material which is high in response capability to visible light, high in yield of hydrogen peroxide prepared by photocatalysis, good in decomposition inhibition performance and capable of being repeatedly used, and is suitable for the field of new energy products.

The invention belongs to the technical field of glass materials, and discloses thermal shock resistant transparent high borosilicate glass which comprises the following components in percentage by weight: 60-70% of silicon dioxide, 18-22% of diboron trioxide, 4-7% of aluminum oxide, 3-5% of magnesium oxide, 2-4% of alkali metal oxide, 0.5-1.5% of nano silicon nitride and 0.5-1% of nano aluminum titanate. The thermal shock temperature difference of the glass within the temperature change range of 20-200 DEG C is larger than or equal to 180 DEG C, the light transmittance within the visible light range of 400-760 nm is larger than or equal to 85%, the alkali metal oxide is composed of sodium oxide and potassium oxide, the weight ratio of the sodium oxide to the potassium oxide is 1: 1-3: 1, the average particle size of the nanometer silicon nitride is smaller than or equal to 100 nm, and the nanometer silicon nitride is evenly dispersed in the glass matrix; according to the thermal-shock-resistant transparent high borosilicate glass and the preparation method thereof, the thermal shock resistance and light transmittance of the glass are improved by optimizing the chemical components of the glass and adding the special nanoparticles in cooperation with a specific preparation process, and the thermal shock resistance of the glass is improved. The problems that existing high borosilicate glass is insufficient in thermal shock resistance and low in light transmittance in a high-temperature environment are solved.

The invention belongs to the technical field of porous silicon nitride ceramics, and discloses a porous silicon nitride ceramic material and a preparation method thereof. The preparation method comprises the following steps: mixing silicon nitride ceramic powder, metal oxide powder and rare earth metal oxide powder, adding a pore forming agent and a grinding medium, mixing, and carrying out ball milling, drying, grinding and sieving to obtain ceramic powder; carrying out dry pressing molding on the ceramic powder to obtain a ceramic green body; carrying out glue discharging treatment on the ceramic green body to obtain a precursor; the precursor is subjected to ultrahigh-temperature rapid sintering treatment, and the porous silicon nitride ceramic is obtained; wherein the sintering temperature ranges from 1600 DEG C to 1900 DEG C. According to the porous silicon nitride ceramic prepared by the method, the porosity is wide and adjustable in range, and the porous silicon nitride ceramic with closed spherical pore morphology can be prepared.

A modified positive electrode material and a preparation method therefor, a positive electrode sheet, and a lithium-ion battery. The modified positive electrode material comprises a positive electrode material serving as a matrix, and a composite coating layer generated in situ on the surface of the matrix. The composite coating layer comprises a spinel phase coating layer disposed on the inner side and a composite nitride coating layer disposed on the outer side, wherein the chemical formula of the composite nitride coating layer is selected from αANβOγ·(1-α)DδEε. The thermal conductivity and electrical conductivity of the modified positive electrode material are effectively improved. Moreover, when used in a lithium-ion battery, the modified positive electrode material has excellent thermal safety and electrochemical performance.

The invention relates to the field of architectural ceramics, and discloses a sapphire effect dry particle, a ceramic tile with a sapphire imitation effect and a preparation method of the ceramic tile. The sapphire effect dry granules comprise blue dry granules and transparent dry granules, wherein the blue dry granules are prepared from the following raw materials: 1.5 to 3.5 parts of superfine tin dioxide, 15 to 19.5 parts of cobalt oxide, 4.5 to 7.5 parts of titanium oxide, 8 to 14 parts of zinc oxide, 32 to 43 parts of calcined aluminum oxide, 8 to 13 parts of quartz, 10 to 16 parts of potassium feldspar and 2.5 to 4.5 parts of boric acid; the transparent dry particles comprise the following raw materials in parts by weight: 8-15 parts of zinc oxide, 5-10 parts of aluminum oxide, 24-28 parts of quartz, 1-2.5 parts of nano silicon nitride and 7-11 parts of cryolite. By mixing the two dry granules, the frit dry granules which have a three-dimensional effect and an ice crack texture and imitate the texture of sapphire crystals can be prepared. The ceramic tile with the sapphire-like effect can be prepared by adopting the dry particles with the sapphire effect.

The invention relates to the technical field of non-oxide ceramic-based composite materials, in particular to Fe-N-based high-entropy nitride ceramic as well as a preparation method and application thereof. The method comprises the following steps: by taking iron powder as a sintering aid, mixing (Hf < 0.2 > Zr < 0.2 > Ti < 0.2 > Nb < 0.2 > Ta < 0.2 >) N high-entropy powder with the iron powder, and carrying out ball milling treatment to obtain ball-milled powder; and under the oxygen-free condition, the ball-milled powder is subjected to sintering treatment, transformation from the loose ball-milled powder to compact and uniform solid solution ceramic is achieved in the sintering treatment process, and the Fe-N-based high-entropy nitride ceramic is obtained. According to the method, a nitride thermal reduction method sintering process is adopted, energy is provided for densification of the Fe-N-based high-entropy nitride ceramic by utilizing reaction heat release of the (Hf0. 2Zr0. 2Ti0. 2Nb0. 2Ta0. 2) N high-entropy powder and the iron powder, the sintering temperature is reduced, energy is saved, and the defect that densification needs to be carried out under a high-temperature condition in the prior art is overcome.

The invention relates to a composite nanodot loaded porous carbon nitride photocatalyst as well as a preparation method and application thereof, and the preparation method comprises the following steps: calcining a precursor formed by mixing melamine, cyanuric acid and trithiocyanuric acid to obtain porous carbon nitride, and loading cobalt oxide nanodots and nickel nanodots on the porous carbon nitride in two steps, the composite nanodot loaded porous carbon nitride photocatalyst with excellent visible light catalytic hydrogen production performance is obtained; when the composite nanodot loaded porous carbon nitride photocatalyst obtained by the method is used for photocatalytic hydrogen production, an activity test result shows that the activity of the photocatalyst prepared by the method is improved by 222.5 times compared with that before modification; the preparation method disclosed by the invention has the advantages of high reaction efficiency and good performance of the obtained photocatalyst, and has a wide application prospect.

The present invention relates to a coated cutting tool (1) for metal machining comprising a cemented carbide substrate body (5) and a coating (6) comprising a layer of a metal nitride, there is an uppermost part of the cemented carbide substrate body (5) wherein there are uppermost WC grains adjacent to the coating (6), there is an intermediate zone between an uppermost part of said WC grains and the coating (6) comprising a peak of Me3 intensity in an EDX line scan made from within the coating (6) into a WC grain perpendicular to the surface plane of the WC grain, Me3 is one of Ti, Cr, Zr, Mo, Nb and V, the average content of Me3 within + / - 10 nm from the Me3 max peak position is from 2 to 30 at%, the Me3 within + / - 1.0 nm from the Me3 max peak position in the EDX line scan is present as a metal nitride or carbonitride, the average content of any noble gas element or combination of noble gas elements, within + / - 1.0 nm from the Me3 max peak position in the EDX line scan, is ≤0.6 at%.

A dry etching method of the present disclosure includes bringing a β-diketone and a gas containing a halogen atom in its molecule into contact with an etching target film containing a metal, an oxide of the metal, or a nitride of the metal formed on a surface of a workpiece to etch the etching target film, the metal containing at least one selected from the group consisting of In, Ga, Cu, Co, Fe, Sn, Zn, Al, Ta, and As.

Disclosed herein is a current collector, a secondary battery, an electrical device, and a method for preparing the current collector. The current collector includes a substrate. The substrate includes the porous material. The affinity material is disposed in pores of the porous material. The affinity material is configured to promote the deposition of metal ions in an electrolyte solution. The affinity material includes at least one of a carbon-based material, a non-metal oxide, a carbide, a fluoride, a nitride, a sulfide, a phosphide, and an organic material. The above manner is able to effectively reduce the nucleation overpotential of the metal ions on the porous material of the current collector, promote the uniform diffusion and deposition of the metal ions within the pores of the porous material of the current collector, inhibit the generation of a dendrite, and improve the cyclic performance and safety of the battery.

The present application provides a semiconductor structure and a method for manufacturing the same, relating to the field of semiconductor technology. First, an aluminum nitride buffer layer is prepared based on a substrate, and then the substrate and the aluminum nitride buffer layer are annealed to form an aluminum nitride film on one side of the substrate, wherein the aluminum nitride film includes a plurality of first base islands, and two adjacent first base islands are spaced apart and partially expose the substrate, and then a second base island is grown based on the first base island using preset growth conditions, and finally an epitaxial layer is formed. The semiconductor structure and the method for manufacturing the same provided by the present application have the effect of improving the quality of epitaxial crystals and suppressing leakage of the GaN interface near the substrate.

The invention provides an iron-based magnetically soft alloy strip and a preparation method and application thereof, the alloy composition of the iron-based magnetically soft alloy strip is FeaCobCrcSidBeWfAlgGehRei (MxNy) j, 75 < = a < = 81, 5 < = b < = 11.9, 5 < = c < = 10, 2 < = d < = 4, 2 < = e < = 4, 2 < = f < = 4, 1 < = g < = 3, 0.5 < = h < = 2, 0.5 < = i < = 1.5, 0.1 < = j < = 1, x: y = 1, and a + b + c + d + e + f + g + h + i + j = 100; m is Ti and / or Zr, and N is nitrogen; wherein the nitride material has an iron-based grain phase and a germanium-tungsten-containing precipitated phase, the nitride is distributed between the interfaces of the iron-based grain phase, and the average grain size of the iron-based grain phase is 5-20 nm. The iron-based magnetically soft alloy strip can be suitable for complex application scenes, and the magnetic performance and reliability of the iron-based magnetically soft alloy are improved.

Disclosed is a semiconductor device comprising a substrate including a first surface and a second surface that are opposite to each other, a via structure that penetrates the substrate, a first passivation pattern disposed on the first surface of the substrate and extending onto an upper sidewall of the via structure, and a second passivation pattern disposed on the first passivation pattern and exposing an uppermost surface of the first passivation pattern. At least a portion of the second passivation pattern is externally exposed. The first passivation pattern includes at least one selected from oxide and silicon oxide. The second passivation pattern includes at least one selected from nitride and silicon nitride.

The invention relates to the technical field of diamond saw blades, in particular to a laser welding diamond saw blade for ultra-narrow slit cutting and a preparation method of the laser welding diamond saw blade. The copper-cobalt-tin alloy material comprises the following raw materials: copper-cobalt-tin alloy powder, tungsten carbide powder, titanium-aluminum nitride, spherical cobalt powder, rare earth yttrium powder, ferrophosphorus powder and diamond abrasive particles. According to the preparation method, the core of the preparation method lies in the combination of powder metallurgy prefabrication of the tool bit and the precise laser welding process, especially the innovative laser welding process, and the prepared diamond saw blade is high in welding seam strength, narrow in heat affected zone and extremely small in matrix deformation; the problems of base body deformation, insufficient welding seam strength, short service life and the like of a traditional saw blade in the ultra-narrow seam cutting process are solved, and the saw blade is perfectly suitable for ultra-narrow seam cutting scenes with extremely high requirements for precision and stability.

The invention relates to a passivation contact structure and a preparation method and application thereof. The preparation method of the passivation contact structure comprises the following steps: preparing a tunneling oxide layer on any surface of a silicon wafer; hydrogen, phosphorane, silane and ammonia gas are introduced, and primary deposition is carried out on the surface of the tunneling oxide layer; after the primary deposition is finished, hydrogen, phosphorane, silane and ammonia gas are continuously introduced for secondary deposition, so that a doped polycrystalline silicon nitride layer is formed on the surface of the tunneling oxide layer; a passivation contact structure is formed on the surface of the silicon wafer through annealing treatment; the flow ratio of hydrogen to phosphine in the primary deposition is greater than that of hydrogen to phosphine in the secondary deposition, and the difference value is 1.4-3.1; the temperature of the primary deposition is greater than or equal to the temperature of the secondary deposition, and the difference value is less than 10 DEG C. The passivation contact structure prepared by the preparation method is beneficial to reducing optical parasitic absorption loss and improving the photoelectric conversion efficiency of a photovoltaic cell.