Embodiments of the present invention relate to a technology for easily adjusting a level of
static electricity required for a substrate according to a
semiconductor process by injecting
static electricity into the substrate or removing
static electricity already formed on the substrate. A static
electricity control device for injecting static
electricity into a substrate disposed in a
vacuum chamber or removing static
electricity formed on the substrate in a
semiconductor processing system, according to an embodiment, comprises: a
charged particle generation unit, disposed on an upper side inside the
vacuum chamber, that generates charged particles including positive ions and electrons by generating a
vacuum ultraviolet ray (VUV) and reacting the VUV with a process gas inside the
vacuum chamber; a grid provided with a plurality of holes, disposed on a lower side of the
charged particle generation unit, that selectively pass the type of charged particles downward according to an input
voltage; a substrate support, disposed below the grid and having the substrate positioned thereon, that is made of a conductive material and guides the charged particles passing through the grid toward the substrate at a predetermined density according to an input bias
voltage; and a static electricity
control unit that controls the static electricity of the substrate by supplying a pulsed
voltage to at least one of the grid and the substrate support, wherein the grid and the substrate support are arranged so as to have a separation distance that is within four times the
mean free path of the process gas according to environmental conditions of the vacuum chamber.