48321 results about "Chemical engineering" patented technology

A premium synthetic lubricating oil base stock having a high VI and low pour point is made by hydroisomerizing a Fischer-Tropsch synthesized waxy, paraffinic feed wax and then dewaxing the hydroisomerate to form a 650-750 DEG F.+ dewaxate. The waxy feed has an initial boiling point in the range of about 650-750 DEG F., from which it continuously boils up to at least 1050 DEG F. and has a T90-T10 temperature difference of at least 350 DEG F. The feed is preferably hydroisomerized without any pretreatment, other than optional fractionation. The 650-750 DEG F.+ dewaxate is fractionated into two or more base stocks of different viscosity.

Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.

An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR₂, or —OR.

Oilfield elements are described, one embodiment comprising a combination of a normally insoluble metal with an element selected from a second metal, a semi-metallic material, and non-metallic materials; and one or more solubility-modified high strength and/or high-toughness polymeric materials selected from polyamides, polyethers, and liquid crystal polymers. Methods of using the oilfield elements in oilfield operations are also described. This abstract allows a searcher or other reader to quickly ascertain the subject matter of the disclosure. It will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

A method of modifying the surface of carbon materials such as vapor grown carbon nanofibers is provided in which silicon is deposited on vapor grown carbon nanofibers using a chemical vapor deposition process. The resulting silicon-carbon alloy may be used as an anode in a rechargeable lithium ion battery.

Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

The present invention relates to catalyst-loaded coal compositions having a moisture content of less than about 6 wt %, a process for the preparation of catalyst-loaded coal compositions, and an integrated process for the gasification of the catalyst-loaded coal compositions. The catalyst-loaded coal compositions can be prepared by a diffusive catalyst loading process that provides for a highly dispersed catalyst that is predominantly associated with the coal matrix, such as by ion-exchange.

A method of sequestering carbon dioxide and producing natural gas including: (a) injecting an injectant containing at least some amount of carbon dioxide into a zone containing natural gas hydrates; (b) releasing natural gas from the hydrates by allowing thermal transfer and pressure changes from the injectant to the hydrates; and (c) sequestering the carbon dioxide in the zone that previously contained the natural gas hydrates.

A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

Particulate compositions are described comprising an intimate mixture of a coal and a gasification catalyst in the presence of steam to yield a plurality of gases including methane and at least one or more of hydrogen, carbon monoxide, carbon dioxide, hydrogen sulfide, ammonia and other higher hydrocarbons are formed. Processes are also provided for the preparation of the particulate compositions and converting the particulate composition into a plurality of gaseous products.

Processes are described for the extraction and recovery of alkali metal from the char that results from catalytic gasification of a carbonaceous material. Among other steps, the processes of the invention include a hydrothermal leaching step in which a slurry of insoluble particulate comprising insoluble alkali metal compounds is treated with carbon dioxide and steam at elevated temperatures and pressures to effect the conversion of insoluble alkali metal compounds to soluble alkali metal compounds. Further, processes are described for the catalytic gasification of a carbonaceous material where a substantial portion of alkali metal is extracted and recovered from the char that results from the catalytic gasification process.

Processes are described for the extraction and recovery of alkali metal from the char that results from catalytic gasification of a carbonaceous material. Among other steps, the processes of the invention include a hydrothermal leaching step in which a slurry of insoluble particulate comprising insoluble alkali metal compounds is treated with carbon dioxide and steam at elevated temperatures and pressures to effect the conversion of insoluble alkali metal compounds to soluble alkali metal compounds. Further, processes are described for the catalytic gasification of a carbonaceous material where a substantial portion of alkali metal is extracted and recovered from the char that results from the catalytic gasification process.

Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

Multivalent complexes will be described, as well as their production and method of use.

A process for fabricating at least one semiconductor layer of a thin film transistor composed of: liquid depositing one or more zinc oxide-precursor compositions and forming the at least one semiconductor layer of the thin film transistor including crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the at least one semiconductor layer from the liquid deposited one or more zinc oxide-precursor compositions.

A catalyst composition and process for the conversion of linear and/or branched paraffin hydrocarbons based on the use of an ionic liquid catalyst in combination with a Brønsted Acid, which provides a catalytic composition with an increased activity compared with said ionic liquid. Under suitable reaction conditions this conversion is leading to paraffin hydrocarbon fraction with higher octane number.

Methods of depositing material on a surface of a substrate are disclosed. The methods include exposing a surface of the substrate to a precursor within a reaction chamber to form adsorbed species on the surface and removing at least a portion of the adsorbed species prior to introducing a reactant to the reaction chamber.

Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.

The invention relates to a high-capacity lithium-ion electrolyte, a battery and a preparation method of a battery, in particular to the high-capacity lithium-ion electrolyte and the battery using the high-capacity lithium-ion electrolyte and the preparation method of the battery. The electrolyte disclosed by the invention comprises lithium salt and non-aqueous organic solvent, and also consists of the following components in weight percent in terms of the total weight of the electrolyte: 0.5-7% of film-forming additive, 0-15% of flame-retardant additive, 2-10% of antiovefill additive, 0.01-2% of stabilizer and 0.01-1% of wetting agent; the electrolyte can enable the anode with high Ni content to work stably, and reduce the battery cost; the high-capacity lithium-ion battery can perform high ratio capacity and excellent safety and high temperature property and cyclic life fully due to the addition and synergetic functions of various functional additives.

A reactor comprising: a hollow shell defining a hermetic enclosure; a plurality of tube sheets disposed within said hermetic enclosure, a first one of said plurality of tube sheets defining a first chamber; at least one reaction tube each having a first end and an opposing second end, said first end being fixedly attached and substantially hermetically sealed to one end of said plurality of tube sheets and opening into said first chamber, the second end being axially unrestrained; each of said reaction tubes is comprised of an oxygen selective ion transport membrane with an anode side wherein said oxygen selective ion transport membrane is formed from a mixed conductor metal oxide that is effective for the transport of elemental oxygen at elevated temperatures and at least a portion of said first and second heat transfer sections are formed of metal; each of said reaction tubes includes first and second heat transfer sections and a reaction section, said reaction section disposed between said first and second heat transfer sections; a reforming catalyst disposed about said anode side of said oxygen selective ion transport membrane; a first process gas inlet; a second process gas inlet; and, a plurality of outlets.

A method of manufacturing a solid electrolyte battery includes a step of thermally pressing a composite layer including a positive electrode ink layer, an electrolyte ink layer and a negative electrode ink layer that are formed by coating a positive electrode ink, an electrolyte ink and a negative electrode ink. Further, the positive electrode ink, the electrolyte ink and the negative electrode ink contain a polymer electrolyte. By this method, it is possible to improve the flow of ions across respective interlayers of a positive electrode active material layer, a solid electrolyte layer and a negative electrode active material layer.

Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

The present invention relates to a controlled delivery system that can be incorporated in liquid, as well as, dry granular, or powder, fabric care products, such as fabric softeners, laundry detergents, rinse added products, and other fabric care products, to enhance fragrance performance. The controlled delivery system of the present invention is a solid, substantially spherical particle comprising hydrophobic cationic charge enhancing agents in conjunction with cationic fabric softening agents that assist in adhering the particles onto fabric. The particles can also include a fragrance. The particle can have an average particle diameter of from about 1 micron to about 500 microns. The controlled delivery system of the present invention can be utilized to deliver a broad range of fragrance ingredients onto fabric and prolong fragrance release from the dry laundered fabric over an extended period of time, or yield a high impact fragrance “burst” upon ironing the fabric. The invention also pertains to fabric care products comprising the controlled release system of the present invention.

Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

This invention provides a film comprising a cross-linked polymer having an oxyalkylene group or a cross-linked polymer having an oxyalkylene group through a urethane bond, as a constituent component, a production method of the film, and an electrochemical apparatus using the film as a separator. The film for separator of an electrochemical apparatus can be easily and uniformly processed, can include an electrolytic solution, exhibits good film thickness and ensures excellent safety and reliability. The electrochemical apparatus is free of leakage of the solution.

The invention relates to a non-aqueous electrolytic solution used for lithium secondary batteries, in particular to an electrolytic solution capable of improving the high-voltage cycle performance of lithium batteries and the storage performance of the electrolytic solution. The non-aqueous electrolytic solution disclosed by the invention contains 0.01-2% by weight of antioxidant based on the total weight of the electrolytic solution, and due to the incorporation of the additives, the storage stability of the electrolytic solution is obviously improved. The non-aqueous electrolytic solution also contains lithium salt, a non-aqueous organic solvent and also contains the following components in percentage by total weight of the electrolytic solution of 0.5-7 percent of film-forming additives, 0-15 percent of flame-retardant additives, 2-10 percent of overcharge protection additives, 0.01-0.02 percent of a stabilizing agent and 0.01-1 percent of a wetting agent. According to the non-aqueous electrolytic solution provided by the invention, batteries can stably work under the high voltage of 4.3V or above, due to the synergic action of the incorporated additives with various functions, the high-capacity lithium-ion batteries can bring high specific energy into full play and have outstanding safety and high-temperature performances and cycle life.

A method for forming a precoat film on a metal surface in a chamber before forming a silicon-containing film having an identical composition system with that of the precoat film on a substrate in the chamber using a PECVD method, wherein the precoat film is formed using a PEALD method in which a first gas and a second gas are supplied into the chamber by shifting timing of supply, the PEALD method comprises an adsorption step comprising supplying the first gas into the chamber so that the source gas component adsorbs on the metal surface, a first purge step comprising discharging an excessive source gas component not adsorbed on the metal surface, and a precoat film forming step comprising supplying the second gas into the chamber and applying high-frequency power to generate plasma in the reactant gas component in the second gas.