11573 results about "Carbide" patented technology

A carbon nanotube hybrid system includes: a carbide-derived carbon prepared by reacting a carbide compound and a halogen group containing gas to extract elements of the carbide compound except carbons; metals supported on the carbide-derived carbon or remaining in the carbide-derived carbon; and carbon sources from which carbon nanotubes are grown from the carbide-derived carbon. A method of preparing the carbon nanotube hybrid system includes preparing the carbide-derived carbon, extracting elements therefrom, and growing carbon nanotubes from the carbide-derived carbon. The carbon nanotube hybrid system has excellent uniformity and a long lifetime. An electron emitter having improved electron emitting properties can be inexpensively prepared using the carbon nanotube hybrid system compared to conventional carbon nanotubes. An electron emission device having excellent electron emitting properties can be prepared using the electron emitter.

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX_Y, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

A meso-porous molecular sieve catalyst with carbide features that the carbide particles are assembled in the pores of meso-porous molecular sieve, resulting in high isolation and dispersion of active component particles and in turn high stability and activity.

A transparent thin film transistor (TFT) and its method of manufacture includes: a substrate, a transparent semiconductor layer formed by coating the substrate with an oxide, a nitride, or a carbide to pattern the material, a gate insulating layer formed on the transparent semiconductor layer, a gate electrode formed on the gate insulating layer to correspond to the transparent semiconductor layer, an interlayer insulating layer formed on the gate electrode, and source and drain electrodes electrically connected to the transparent semiconductor layer through contact holes formed in the interlayer insulating layer and the gate insulating layer.

Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

Methods and apparatus for depositing a layer including providing at least one precursor vapor to a process chamber, providing a gas to the process chamber, separate from the at least one precursor vapor, and forming a compound layer from the at least one precursor vapor and the gas on a wafer in the process chamber. The deposition may be a chemical vapor deposition (CVD) deposition method, a metal organic chemical vapor deposition (MOCVD) deposition method, an atomic layer deposition (ALD) deposition method, or other similar deposition method. The compound layer may be at least one of an oxide, nitride, carbide, or other similar layer.

A method of densifying a porous substrate with a matrix, includes subdividing the pores present in the porous substrate so as to form in the substrate a network of micropores, the subdividing being performed with a filler composition comprising at least one carbon-containing phase or carbide-containing phase that is accessible via the network of micropores; and infiltrating the network of micropores formed by the filler material by reactive chemical vapor infiltration, the infiltration being performed with a reactive gas composition that does not contain carbon and that includes at least one element suitable for reacting with the carbon of the filler composition in order to form a carbide.

A CF8C type stainless steel alloy and articles formed therefrom containing about 18.0 weight percent to about 22.0 weight percent chromium and 11.0 weight percent to about 14.0 weight percent nickel; from about 0.05 weight percent to about 0.15 weight percent carbon; from about 2.0 weight percent to about 10.0 weight percent manganese; and from about 0.3 weight percent to about 1.5 weight percent niobium. The present alloys further include less than 0.15 weight percent sulfur which provides high temperature strength both in the matrix and at the grain boundaries without reducing ductility due to cracking along boundaries with continuous or nearly-continuous carbides. The disclosed alloys also have increased nitrogen solubility thereby enhancing strength at all temperatures because nitride precipitates or nitrogen porosity during casting are not observed. The solubility of nitrogen is dramatically enhanced by the presence of manganese, which also retains or improves the solubility of carbon thereby providing additional solid solution strengthening due to the presence of manganese and nitrogen, and combined carbon.

The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

The invention discloses alumina-coated granules, as well as a preparation method and application thereof. The alumina-coated granules consist of cores and shells which coat the cores. The cores are made of at least one of materials of metals, oxides, metal hydroxides, metal inorganic salts, non-metals, carbides, nitrides, lithium salts, semiconductors and organic compounds; the shell is made of Al2O3. By adopting a liquid phase method, the cores to be coated are mixed with aluminum salts, metal aluminum is precipitated by producing an alkaline environment in situ or externally adding alkaline, so that uniform, continuous and controllable coating can be formed on the surfaces of the cores. The coating method provided by the invention is simple, and has mild conditions and high universality; the coating layer has controllable thickness, completeness and uniformity; the alumina-coated granules has high practicability and a great application prospect in the field of catalysis, lithium ion batteries, surface-enhanced Raman, biomedicine and the like.

Diamond-bonded constructions include a diamond-bonded body having a thermally stable region extending a distance below a diamond-bonded body surface. The thermally stable region comprises a matrix phase of bonded-together diamond crystals, and interstitial regions comprising a reaction product. The reaction product is formed by reaction between the diamond crystals and a reactive material. The reactant is a carbide former and the reaction product is a carbide. The diamond-bonded body includes a further diamond region extending from the thermally stable region that comprises the matrix phase and a Group VIII metal disposed within interstitial regions of the matrix phase. The thermally stable region is substantially free of a catalyst material used to initially form the diamond-bonded body. The diamond-bonded body may include a material layer formed from the reaction product that is disposed on a surface of the diamond-bonded body thermally stable region.

An aluminum oxde-coated article has a first coating layer and a second coating layer formed in this order on a substrate, the first coating layer having a single- or multi-layer structure and being made of at least one selected from the group consisting of carbides, nitrides, carbonitrides, oxides, oxycarbides, oxynitrides and oxycarbonitrides of metals in Groups IVa, Va and VIa of the Periodic Table, and the second coating layer being constituted by at least one alpha-aluminum oxide-based oxide layer, which has an equivalent X-ray diffraction peak ratio PR (1 0 10) of 1.3 or more in a (1 0 10) plane.

A zinc ion-exchanging battery device comprising: (A) a cathode comprising two cathode active materials (a zinc ion intercalation compound and a surface-mediating material); (B) an anode containing zinc metal or zinc alloy; (C) a porous separator disposed between the cathode and the anode; and (D) an electrolyte containing zinc ions that are exchanged between the cathode and the anode during battery charge/discharge. The zinc ion intercalation compound is selected from chemically treated carbon or graphite material having an expanded inter-graphene spacing d₀₀₂ of at least 0.5 nm, or an oxide, carbide, dichalcogenide, trichalcogenide, sulfide, selenide, or telluride of niobium, zirconium, molybdenum, hafnium, tantalum, tungsten, titanium, vanadium, chromium, cobalt, manganese, iron, nickel, or a combination thereof. The surface-mediating material contains exfoliated graphite or multiple single-layer sheets or multi-layer platelets of a graphene material.

Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.

A carbon fine powder is obtained by uniformly coating the surface of a carbon fine powder having a large specific surface area with a uniform thin film layer of a metal oxide, metal nitride or metal carbide as an electrode active substance material through induction of a sonochemical reaction. It is found that the obtained carbon fine powder has a low electrical resistance and shows a rapid faradaic process (pseudo-capacitance) of the surface coating layer. The coated carbon fine powder, a process for producing the same, and a supercapacitor and a secondary battery using the carbon fine powder are disclosed.