5711 results about "Tungsten" patented technology

A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and/or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.

A compound comprising a composition A_x(M′_1-aM″_a)_y(XD₄)_z, A_x(M′_1-aM″_a)_y(DXD₄)_z, or A_x(M′_1-aM″_a)_y(X₂D₇)_z, and have values such that x, plus y(1-a) times a formal valence or valences of M′, plus ya times a formal valence or valence of M″, is equal to z times a formal valence of the XD₄, X₂D₇, or DXD₄ group; or a compound comprising a composition (A_1-aM″_a)_xM′_y(XD₄)_z, (A_1-aM″_a)_xM′_y(DXD₄)_z(A_1-aM″_a)_xM′_y(X₂D₇)_z and have values such that (1-a)_x plus the quantity ax times the formal valence or valences of M″ plus y times the formal valence or valences of M′ is equal to z times the formal valence of the XD₄, X₂D₇ or DXD₄ group. In the compound, A is at least one of an alkali metal and hydrogen, M′ is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M″ any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a≦0.1, and x, y, and z are greater than zero. The compound can have a conductivity at 27° C. of at least about 10⁻⁸ S/cm. The compound can be a doped lithium phosphate that can intercalate lithium or hydrogen. The compound can be used in an electrochemical device including electrodes and storage batteries and can have a gravimetric capacity of at least about 80 mAh/g while being charged/discharged at greater than about C rate of the compound.

A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

A gate structure of a semiconductor device having a NFET and a PFET, includes a lower layer of a hafnium-based dielectric over the gates of the NFET and PFET, and an upper layer of a lanthanide dielectric. The dielectrics are annealed to mix them above the NFET resulting in a lowered work function, and corresponding threshold voltage reduction. An annealed, relatively thick titanium nitride cap over the mixed dielectric above the NFET gate also lowers the work function and threshold voltage. Above the TiN cap and the hafnium-based dielectric over the PFET gate, is another layer of titanium nitride that has not been annealed. A conducting layer of tungsten covers the structure.

A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO₄); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.

A putter golf club head includes a body fitted with relatively high-density heel and toe inserts. A golf putter club head includes a body formed of a first material (e.g., titanium) having a density of approximately 3.0 g/cm³ to 7.0 g/cm³. Two cavities are formed in the body, one adjacent to the heel region of the body, and another adjacent to the toe region. Inserts are provided in each of the two cavities and are formed of a second material (e.g., tungsten) having a density ranging from approximately 15.0 g/cm³ to 20.0 g/cm³. The cavities may be configured such that they extend to (or are bounded by) the bottom surface and/or the front face of the body. In one embodiment, the body of the putter club head has an elastic modulus greater than approximately 90 GPa while the density of the insert material is greater than the density of the body material by a factor of at least 3.0.

The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.

A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.

A frangible projectile with a specific gravity similar to a lead projectile. The projectile comprises 34-94%, by weight, binder. The binder comprises poly ether block amide resin. The projectile further comprises 6-66%, by weight, ballast. The ballast comprises at least one member selected from a group consisting of tungsten, tungsten carbide, molybdenum, tantalum, ferro-tungsten, copper, bismuth, iron, steel, brass, aluminum bronze, beryllium copper, tin, aluminum, titanium, zinc, nickel silver alloy, cupronickel and nickel. The projectile can be prepared with a particularly preferred specific gravity of 5-14 and more preferably 11-11.5.

Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

The present invention relates to compositions and methods for forming a bit body for an earth-boring bit. The bit body may comprise hard particles, wherein the hard particles comprise at least one carbide, nitride, boride, and oxide and solid solutions thereof, and a binder binding together the hard particles. The binder may comprise at least one metal selected from cobalt, nickel, and iron, and at least one melting point reducing constituent selected from a transition metal carbide in the range of 30 to 60 weight percent, boron up to 10 weight percent, silicon up to 20 weight percent, chromium up to 20 weight percent, and manganese up to 25 weight percent, wherein the weight percentages are based on the total weight of the binder. In addition, the hard particles may comprise at least one of (i) cast carbide (WC+W2C) particles, (ii) transition metal carbide particles selected from the carbides of titanium, chromium, vanadium, zirconium, hafnium, tantalum, molybdenum, niobium, and tungsten, and (iii) sintered cemented carbide particles.

An iron golf club head having a thin (less than 0.12 inches) first section that has an expanded unsupported front face region. The first section including a central portion forming part of a leading edge and wrapping around a sole section of the club, to create an increase the coefficient of restitution of the club head to greater than 0.8. The club head utilizes a rear insert that in addition to providing support for the front face, also allows for the fine tuning of swing weights with no change in geometry or size of the club head. This is accomplished this by the utilization of weight adjustment inserts that impregnate tungsten loaded plastic into sheets of carbon graphite and epoxy. The percentage of tungsten creating a weight range without any size change in the sheets.

An implementing mode of the invention provides an improved technology for depositing materials containing tungsten. The technology utilizes an infusion technology and a gaseous phase deposition technology, such as atomic layer deposition (ALD), to provide tungsten-containing materials with obviously improved surface evenness and yield. In one implementing mode, a method for forming tungsten-containing materials on a substrate is provided. The method comprises deposing a substrate, which contains a bottom coating deposited thereon, in a technological chamber; exposing the substrate orderly in a precursor of tungsten and reducing gases so as to deposit a tungsten nucleation layer on the bottom coating, during the ALD technology; and depositing a tungsten block layer on the tungsten nucleation layer. The invention is characterized in that the reducing gases comprise a hydrogen gas/hydride flow ratio of 40:1, 100:1, 500:1, 800: 1, 1000:1 or more, and comprise hydride such as diborane, silicane or silicoethane.

An implantable medical device includes a structural body made from a superelastic material and includes one or more marker holders integrally formed on the structural body. Each marker holder is designed to hold a radiopaque marker which has a level of radiopacity greater than the superelastic material. The radiopaque marker can be made from a nickel-titanium alloy which includes a ternary element. The ternary element can be selected from the group of elements consisting of iridium, platinum, gold, rhenium, tungsten, palladium, rhodium, tantalum, silver, ruthenium, and hafnium. In one form, the marker holder includes a pair of projecting fingers connected together at a notched region to cooperatively create a particular-shaped opening. This opening, in turn, is adapted to receive a similarly shaped portion formed on the radiopaque marker. In one form, the radiopaque marker includes an inner core which is partially, or completely, encased by an outer layer. This inner core can be made from a highly radiopaque material while the outer layer is formed from a material that is easier to weld to the marker.

A method of tungsten layer deposition for copper metallization in semiconductor devices includes reacting a tungsten carbonyl compound and a borane compound using a cyclical deposition technique. In one embodiment, the tungsten barrier layer is formed on a patterned dielectric layer by alternately adsorbing the tungsten carbonyl compound and the borane compound onto a semiconductor substrate. The tungsten layers have substantially uniform dimensions and excellent adhesion to copper such as copper seed layers or direct electroplating of copper onto the tungsten layer.

A process for selective formation of ethanol from acetic acid by hydrogenating acetic acid in the presence of first metal, a silicaceous support, and at least one support modifier. Preferably, the first metal is selected from the group consisting of copper, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, titanium, zinc, chromium, rhenium, molybdenum, and tungsten. In addition the catalyst may comprise a second metal preferably selected from the group consisting of copper, molybdenum, tin, chromium, iron, cobalt, vanadium, tungsten, palladium, platinum, lanthanum, cerium, manganese, ruthenium, rhenium, gold, and nickel.

A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Polymer nanocomposite implants with nanofillers and additives are described. The nanofillers described can be any composition with the preferred composition being those composing barium, bismuth, cerium, dysprosium, europium, gadolinium, hafnium, indium, lanthanum, neodymium, niobium, praseodymium, strontium, tantalum, tin, tungsten, ytterbium, yttrium, zinc, and zirconium. The additives can be of any composition with the preferred form being inorganic nanopowders comprising aluminum, calcium, gallium, iron, lithium, magnesium, silicon, sodium, strontium, titanium. Such nanocomposites are particularly useful as materials for biological use in applications such as drug delivery, biomed devices, bone or dental implants.

Tungsten/polymer composites comprising tungsten powder, another metal powder having a high packing density, and organic binder have high density, good processibility and good malleability. Such composites are useful as lead replacements, particularly in the manufacture of shot.

A piston ring has a diamond-like carbon film formed in a thickness of 0.5 to 30 micrometers over an under film on the upper and lower surfaces. The under film is directly formed on the surfaces, or formed on a hard surface treatment layer consisting of a gas nitrided layer or a chromium plating film. The diamond-like carbon is configured with any one of an amorphous carbon structure, an amorphous carbon structure having partly a diamond structure, or an amorphous carbon structure having partly a graphite structure. The under film is comprised of one or more elements selected from the group consisting of silicon, titanium, tungsten, chromium, molybdenum, niobium and vanadium in an atomic content of 70 percent or more and below 100 percent, and the remaining content consisting of carbon, or one or more of said elements in an atomic content of 100 percent. The films may also be formed in the same way on the outer circumferential surface of the piston ring.

A zinc ion-exchanging battery device comprising: (A) a cathode comprising two cathode active materials (a zinc ion intercalation compound and a surface-mediating material); (B) an anode containing zinc metal or zinc alloy; (C) a porous separator disposed between the cathode and the anode; and (D) an electrolyte containing zinc ions that are exchanged between the cathode and the anode during battery charge/discharge. The zinc ion intercalation compound is selected from chemically treated carbon or graphite material having an expanded inter-graphene spacing d₀₀₂ of at least 0.5 nm, or an oxide, carbide, dichalcogenide, trichalcogenide, sulfide, selenide, or telluride of niobium, zirconium, molybdenum, hafnium, tantalum, tungsten, titanium, vanadium, chromium, cobalt, manganese, iron, nickel, or a combination thereof. The surface-mediating material contains exfoliated graphite or multiple single-layer sheets or multi-layer platelets of a graphene material.

The invention relates to an infrared detector with a micro-bridge structure, which belongs to the technical field of micro-electromechanics, and comprises a silicon substrate as a read-out circuit of the infrared detector; a metal reflecting layer deposited on the silicon substrate; a dielectric layer which is deposited in a groove of the metal reflecting layer and has the height being consistentwith that of the metal reflecting layer; a sacrifice layer and a first release protection layer used as protection of release of the sacrifice layer which are deposited on the dielectric layer and the metal reflecting layer and form through holes by lithography and etching; a copper or tungsten pier which is deposited in the through hole of the sacrifice layer; a metal electrode deposited on the copper or tungsten pier and the first release protection layer; and a sensitive material detecting layer which is deposited on the metal electrode and the first release protection layer. A Cu-column micro-bridge structure is manufactured by using the damascene process, and a flat micro-bridge plane is manufactured by introducing the chemical mechanical polishing process (CMP), thereby being conductive to the follow-up process and improving the performances.

An implantable stent includes a plurality of elongate wires braided to form a hollow tubular structure having a tubular wall to define an interior surface and an exterior surface and having opposed open first and second ends, wherein the opposed open first and second ends are atraumatic ends The atraumatic ends of the stent are desirably free of any loose wire ends. The wires include composite wires to enhance visibility of the wires to provide improved external imaging of the wires in the body. The elongate composite wires of the stent may be metallic wires having an outer metallic portion including a first metal, such as nitinol, and an inner metallic core portion including a second metal, which is a radiopaque material, such as gold, barium sulfate, ferritic particles, platinum, platinum-tungsten, palladium, platinum-iridium, rhodium, tantalum or combinations thereof.

A lightwave oven for cooking with light having wavelengths in the visible, near visible, and infra-red spectral ranges uses one or more quartz halogen tungsten lamps or quartz arc bulbs positioned above and below the food item and delivers light energy in select ranges of the electromagnetic spectrum during select portions of the cooking cycle.

Golf club structures, including club heads and shafts, composed of composites comprised of a matrix of metal, such as an aluminum alloy, or a plastic material and a fiber such as graphite or a ceramic, which may be whiskerized, and which may also be selectively weighted as in the toe and heel of a club head, with heavy particles such as tungsten metal. The club structure may also be surface hardened by applying a coating of fullerenes to a metal club structure and heat treating it to produce a hard coating of metal carbide, preferably by coating a titanium golf club structure with fullerenes and heat treating the coated structure to produce a titanium carbide surface.

The invention discloses a hydro dewaxing catalyst and the preparation method. In the method, compound with hydrogen active component is mixed with aluminum dry gel to prepare adhesive; and then the adhesive is mixed with shape-selective cracked zeolite and is pinched in shape; after drying and roasting, catalyst carrier is yielded; then the catalyst carrier is impregnated in the impregnating solution containing the rest active component and promoter; and after drying and roasting again, the catalyst of the invention is yielded. The invention is capable of taking full advantage of the alumina used as adhesive in the catalyst carrier under low hydrogen active component content conditions to prepare adhesive containing all the molybdenum and tungsten and part of the nickel, thereby keeping a certain amount of nickel oxide in the zeolite. The rest of the active metal component is distributed in the alumina, keeping the zeolite passage unobstructed with good hydro dewaxing effect and effectively improving the hydrogen addition and purification performance of the catalyst. The catalyst is especially suitable for hydro dewaxing of raw material containing wax and with high nitrogen impurity content and suitable for hydrogen addition and purification.

The invention relates to a hydrogenation method for a coal tar suspension bed of a heterogeneous catalyst. The method comprises processes of coal tar raw material pretreatment and distillatory separation, coal tar heavy fraction suspension bed hydrogenation cracking and conventional light fraction oil extraction, wherein the suspension bed hydrogenation reaction temperature is between 320 and 480DEG C, the reaction pressure is 8 to 19MPa, the volume air speed is 0.3 to 3.0h<-1>, the hydrogen oil volume ratio is 500 to 2,000, the catalyst is a powdery granular coal tar suspension bed hydrogenation catalyst of a single metal active ingredient containing molybdenum, nickel, cobalt, tungsten or iron or a composite multi-metal active ingredient, the adding amount of the catalyst is based on the ratio of the metal quantity of the active ingredient to the weight of the coal tar raw materials of 0.1: 100-4: 100, most of tail oil containing the catalyst after lightweight oil is separated froma hydrogenation reaction product is directly circulated to a hydrogenation bed reactor, a small part of tail oil is subjected to catalyst removal treatment and then circulated to the hydrogenation bed reactor to be subjected to further lightweight treatment, and the heavy oil is totally or furthest circulated. The method fulfills the purposes of maximum production of the lightweight oil in the coal tar and cyclic utilization of the catalyst, and greatly improves the utilization efficiency of the raw materials and the catalyst.

There is provided a battery containing an electrolyte, according to which oxidative decomposition of the electrolyte is suppressed. The battery contains a positive electrode having an active material and an electron conducting material. The electron conducting material has a barrier layer at least on the surface thereof. This barrier layer is substantially constituted from at least one material selected from (a) oxides of elements in group 2 to 14 and the third or subsequent period of the periodic table, (b) carbides of elements in group 2 to 14 and the third or subsequent period of the periodic table, (c) nitrides of elements in group 2 to 14 and the third or subsequent period of the periodic table, and (d) tungsten.

A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials.