3666results about How to "High current" patented technology

A cordless instrument (20, 40) detachable from a charger (10, 30, 31) is attached to the charger (10, 30, 31), and is charged. A first storage part (12, 33) chargeable from a direct current source (11, 32) included in the charger (10, 30, 31), a first charge and discharge control circuit (13, 50) to control charge and discharge of the first storage part (12, 33), a second storage part (21, 43) included in the cordless instrument (20, 40), and a second charge and discharge control circuit (22, 45) to control charge and discharge of the second storage part (21, 43) are provided. Further, a third storage part (28) chargeable from the direct current source (11, 32) may be provided. Also to the cordless instrument (20, 40), a fourth storage part (44) may be provided. Upon attaching the cordless instrument, the second storage part (21, 43) is charged at least from the first storage part (12, 33). In comparison with charging time to conventional secondary batteries, it is capable of rapid charge, long life use, resulting in such merits as to realize the compact size of a charger and low cost.

The ability of an ultrasonic system to sweep and lock onto a resonance frequency of a blade subjected to a heavy load at startup is improved by applying a high drive voltage or a high drive current while systematically increasing the level of the applied signal. Increasing the drive signal to the hand piece results in an improved and more pronounced “impedance spectrum.” That is, under load, the increased drive signal causes the maximum phase margin to become higher and the minimum/maximum impedance magnitude to become more pronounced. Increasing the excitation drive signal to the hand piece/blade at startup significantly alleviates the limiting factors associated with ultrasonic generators, which results in an increase of the maximum load capability at startup.

A transistor device (10), the transistor device (10) comprising a substrate (11, 14), a fin (3, 3A) aligned along a horizontal direction on the substrate (11, 14), a first source/drain region (4) of a first type of conductivity in the fin (3, 3A), a second source/drain region (5) of a second type of conductivity in the fin (3, 3A), wherein the first type of conductivity differs from the second type of conductivity, a channel region (33) in the fin (3, 3A) between the first source/drain region (4) and the second source/drain region (5), a gate insulator (6) on the channel region (33), and a gate structure (7, 8) on the gate insulator (6), wherein the sequence of the first source/drain region (4), the channel region (33) and the second source/drain region (5) is aligned along the horizontal direction.

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450 DEG C., and, after crystallization, keeping the maximum processing temperature at or below 350 DEG C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.

A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.

A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.

Methods and apparatuses for forming customized arthroplasty jigs are disclosed. Some of the apparatuses may comprise a plurality of rapid production machines and an automated mechanical system. The automated mechanical system may be configured to transport a first arthroplasty jig blank to a first rapid production machine and a second arthroplasty jig blank to a second rapid production machine. The first rapid production machine may be configured to form a first arthroplasty jig from the first arthroplasty jig blank, and the second rapid production machine may be configured to form a second arthroplasty jig from the second arthroplasty jig blank, the second arthroplasty jig having a different configuration from the first arthroplasty jig.

Conventional file-based engineering design data for an engineering model are represented by a plurality of components. Each component has a unique identifier, a set of fields, each field having a data type and a data value, and a program which interprets and modifies the fields. The plurality of components are stored in a repository of a server. The repository also stores a history of any changes made to the components. A plurality of client computers are bidirectionally connected to the server. Each client computer may obtain the current version of the components and may send locally edited versions of the components back to the server to replace the current versions in the repository. At the client computer, the user interacts with the components using conventional file-based software. Before locally edited versions of the components are committed to the server to replace the current versions, a synchronization and merging process occurs whereby the latest version of the components are downloaded to the client computer and are compared to the locally edited version of the components to detect resolvable (compatible) and unresolvable (incompatible) conflicts therebetween. The commit process is performed only if no unresolvable conflicts exist between the two versions of the components. To facilitate translation between file-based data and components, a schema is written to "wrap" each of the engineering file formats. Each schema is a set of classes that capture all of the information in the file-based data.

The present invention provides an exfoliated graphite-based hybrid material composition for use as an electrode, particularly as an anode of a lithium ion battery. The composition comprises: (a) micron- or nanometer-scaled particles or coating which are capable of absorbing and desorbing alkali or alkaline metal ions (particularly, lithium ions); and (b) exfoliated graphite flakes that are substantially interconnected to form a porous, conductive graphite network comprising pores, wherein at least one of the particles or coating resides in a pore of the network or attached to a flake of the network and the exfoliated graphite amount is in the range of 5% to 90% by weight and the amount of particles or coating is in the range of 95% to 10% by weight. Also provided is a lithium secondary battery comprising such a negative electrode (anode). The battery exhibits an exceptional specific capacity, excellent reversible capacity, and long cycle life.

The subject matter of the present invention is a load breaker arrangement (1) for switching on and off a DC current of a DC current circuit in a photovoltaic plant with a semiconductor switching element (4) to avoid a switching arc, there being provided an electronic control unit (5) configured such that one or more signals are received by the control unit, and the load breaker arrangement (1) being configured such that in at least one current-carrying line of the DC current circuit there is galvanic separation by a switching contact that is automatically controllable by the control unit (5) in the switched-off condition and one or more control signals being transmitted to the load breaker arrangement (1) and a semiconductor switching element (4) interrupting the DC current so that the switching contact is de-energized, whereby

• • the signals are flaw signals that are received in case of a flaw in the PV generator, inverter or on the AC side, the DC current circuit being automatically switched on or off by the control signals in case of at least one flaw,
  • said arrangement being configured such that, during switch off,
  • said semiconductor switching element (4) is at first closed in a first step,
  • the switching contacts (K1, K2) of a first switching means are opened in a second step for the DC current to flow through said semiconductor switching element (4),
  • said semiconductor switching element (4) being again opened in a third step and
  • switching contacts (K1, K2) of a second switching means being opened in order to cause galvanic separation to occur
  • and that an additional manually operable load breaker (8) is connected, said manually operable load breaker (8) being a manually breakable DC current connecting system with plug contacts for photovoltaic plants that is provided with an electronic arc quenching system.

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

A radiation generating apparatus includes: an envelope 1 having a first window 2 through which a radiation is transmitted; and a radiation tube 10 being held within the envelope 1, and having a second window 15 which is arranged in opposition to the first window 2, and through which the radiation is transmitted; and a radiation shielding member 16 thermally connected to the second window 15, having a radiation transmitting hole 21 arranged in communication with the second window 15, and having a protruding portion protruding from the second window 15 toward the first window 2. A thermal conducting member 17 having a higher thermal conductivity rather than that of the radiation shielding member 16 is connected to the protruding portion of the radiation shielding member 16. The radiation generating apparatus can shield an unnecessary radiation and cool a target with a simple structure and is entirely reduced in weight.

In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

This invention provides a hybrid nano-filament composition for use as an electrochemical cell electrode. The composition comprises: (a) an aggregate of nanometer-scaled, electrically conductive filaments that are substantially interconnected, intersected, or percolated to form a porous, electrically conductive filament network comprising substantially interconnected pores, wherein the filaments have an elongate dimension and a first transverse dimension with the first transverse dimension being less than 500 nm (preferably less than 100 nm) and an aspect ratio of the elongate dimension to the first transverse dimension greater than 10; and (b) micron- or nanometer-scaled coating that is deposited on a surface of the filaments, wherein the coating comprises an anode active material capable of absorbing and desorbing lithium ions and the coating has a thickness less than 20 μm (preferably less than 1 μm). Also provided is a lithium ion battery comprising such an electrode as an anode. The battery exhibits an exceptionally high specific capacity, an excellent reversible capacity, and a long cycle life.

A shopping assistant method and system provides a consumer with a mobile terminal in a shopping mall as a shopping assistant. The consumer can input a shopping list to the mobile terminal in advance and login at an entrance of the shopping mall in a wireless way for sending the shopping list to a remote server in the shopping mall. The remote server finds goods in the shopping list from its database that have identical names and other goods having information that meets with a pre-stored preference condition, and then sends the information found to the mobile terminal for display. Accordingly, the consumer can conveniently compare prices among numerous goods and quickly get the desired goods, or the closest ones. When the consumer finishes shopping, the remote server further deducts the amount from a personal financial account so as to complete an e-commerce.

The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

An electric arc welding system for creating an AC welding arc between an electrode and a workpiece wherein the system comprises a first controller for a first power supply to cause the first power supply to create an AC current between the electrode and workpiece by generating a switch signal or command with polarity reversing switching points in the first controller, with the first controller operated at first welding parameters in response to first power supply specific parameter signals to the first controller. The system has at least one slave controller for operating a slave power supply to create an AC current between the electrode and workpiece by reversing polarity of the AC current at switching points where the slave controller is operated at second welding parameters in response to second power supply specific parameter signals to the slave controller. An information network connected to the first controller and the slave controller and containing digital first and second power supply specific parameter signals for the first controller and the slave controller and a digital interface connects the first controller with the slave controller to control the switching points of said second power supply by the switch signal or command from the first controller.