193results about How to "High dielectric constant" patented technology

A plurality of a first conductive layers are provided at a certain interval L in a vertical direction, with a dielectric sandwiched therebetween. The certain interval L is set so that the first dielectric has an equivalent oxide thickness D_EOT that satisfies the following relation (1).

D_sio2<D_EOT<D_k  (1)

• • D_sio2 denotes a thickness of the dielectric when the dielectric is composed of silicon oxide with a minimum thickness that can withstand a maximum voltage to be applied to the first conductive layers. D_k denotes such an equivalent oxide thickness of a first dielectric that provides the resistance value Rsio2. The resistance value Rsio2 being defined as a resistance value of the first semiconductor layer for each of the first conductive layers when the dielectric is composed of silicon oxide and has a film thickness of D_sio2.

Disclosed are dendritic macromolecule-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The dendritic macromolecules have branched ends that are functionalized with an organic group that includes at least one 3-40 membered cyclic group.

The invention discloses a composite dielectric material, a prepreg manufactured and a copper-clad foil laminated board by using the composite dielectric material, wherein the composite dielectric material comprises the components by mass percent: 4-30% of bismaleimide compound, 7-30% of cyanate ester monomer, 2-20% of epoxy resin, 2-20% of allylphenol compound, 0.5-5% of catalyst and 30-80% of inorganic filler, wherein the inorganic filler is high-dielectric oxide and/ or conductive particles, and can be evenly dispersed in organic matrix by surface grafting or surface coating modification; the prepreg manufactured by the composite dielectric material can be obtained by coating the composite dielectric material on the surface of copper foil and carrying out heat treatment at 80-100 DEG C. The copper-clad foil laminated board is obtained by laminating the prepreg at the temperature of 120-200 DEG C. The copper-clad foil laminated board has the excellent characteristics of high glass transition temperature, high dielectric constant, low dielectric loss, high peel strength and the like, thus being used for manufacturing a high-temperature resistant embedded capacitor printed circuit board (PCB).

There are disclosed new composite materials having improved electric field induced strain levels, improved electric constants, and having advantageous mechanical properties for use in electrical devices.

A SONOS memory cell, formed within a semiconductor substrate, includes a bottom dielectric disposed on the semiconductor substrate, a charge trapping material disposed on the bottom dielectric, and a top dielectric disposed on the charge trapping material. Furthermore, the SONOS memory cell includes a word-line gate structure disposed on the top dielectric and at least one bit-line gate for inducing at least one inversion bit-line within the semiconductor substrate.

Bis(2-acenyl)acetylene compounds that are useful as organic semiconductors are disclosed. The compounds, when used as the active layer in OTFTs exhibit device characteristics, like charge-carrier mobilities and current on/off ratios, that are comparable to those of pentacene. Also described are semiconductor devices comprising at least one compound of the invention; and articles comprising the semiconductor devices such as thin film transistors or transistor arrays, and electroluminescent lamps.

A twinax cable includes at least a pair of core wires, each of which includes a conductor and an insulator covering an outer periphery of the conductor. The insulator includes an inner insulator covering the outer periphery of the conductor and an outer insulator covering an outer periphery of the inner insulator. The inner insulator is formed by a non-colored compressed insulator. The outer insulator is formed by a colored compressed insulator. A thickness of the outer insulator is formed thinner than a thickness of the inner insulator. The outer insulators of the pair of core wires are formed to have hues that are set respectively differently.

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. A semiconductor device of one of several disclosed embodiments comprises a semiconductor layer having a source region and a drain region, and a gate insulating film provided on the semiconductor layer between the source region and the drain region. The gate insulating film comprising an oxide including a metal element and further includes at least one element selected from the group consisting of nitrogen and aluminum as a first element. The content of the first element is relatively higher at both ends near the source region and the drain region than at a center of the gate insulating film. A gate electrode is provided on the gate insulating film.

The invention discloses a preparation method of a conductive macromolecule non-covalent functionalized graphene modified electrokinetic energy conversion polymer material. according to the method, conductive macromolecules are non-covalent functionalized onto the surface of nano-graphene; and then, the conductive macromolecule non-covalent functionalized graphene nano-material undergoes ultrasonic-assisted dispersion into an electrokinetic energy conversion polymer solution so as to finally obtain a conductive macromolecule non-covalent functionalized graphene/electrokinetic energy conversion polymer composite material. The electro-stimulate response intelligent polymer composite material obtained by the method has high dielectric constant and high electrodeformation value. When content of poly(3,4-ethylenedioxythiophene): polystyrolsulfon acid non-covalent functionalized graphene nanofiller is 3%, dielectric constant of the modified polyurethane dielectric elastomer intelligent material reaches up to 350 at room temperature and at the frequency of 1000 Hz, dielectric loss is 0.20, and loss modulus is 200 MPa. Under the action of a 32.2 MV/m electric field, electrodeformation value in the thickness direction reaches 162%. Performance of the material provided by the invention is far more excellent than performance of a regular nano-ceramic or nano-conductive filler modified intelligent polymer composite material.

This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable.

A semiconductor device includes a stack comprising insulating patterns vertically stacked on a substrate and gate patterns interposed between the insulating patterns, an active pillar passing through the stack and electrically connected to the substrate and a charge storing layer interposed between the stack and the active pillar. The charge storing layer includes a first portion between the active pillar and one of the gate patterns, a second portion between the active pillar and one of the insulating patterns, and a third portion joining the first portion to the second portion and having a thickness less than that of the first portion.

The invention relates to a high-voltage-resistant and high-energy-density capacitor and a preparation method thereof. The high-voltage-resistant and high-energy-density capacitor comprises a substrate, a bottom electrode, a dielectric layer and a top electrode, wherein Si or SiO2/Si is taken as the substrate; the bottom electrode is a metal film, a conductive oxide film or a combination of both; the dielectric layer consists of a BaTiO3 ferroelectric film; and the top electrode is a metal film point electrode. A metal target or/and conductive oxide target is adopted, and a single target is used for depositing a metal film or a conductive oxide film, or depositing the meal film and the conductive oxide film in sequence on the substrate in a radio-frequency or direct current magnetron sputtering way; a ceramic BaTiO3 target is adopted, and a BaTiO3 layer is deposited on the bottom electrode in a radio-frequency magnetron sputtering way; and a metal target is adopted, and the top electrode is deposited in a radio-frequency magnetron sputtering way. The film capacitor prepared with the method has the advantages of small size, high voltage resistance and breakdown field strength Eb of higher than 1000kV/cm; the practical discharging energy density is not less than 10J/cm<3>; and the loss is low, and the dielectric performance is kept stable when the frequency and temperature change.

Belonging to the field of electronic composite materials and nano-functional materials, the invention provides a double-layer structure flexible piezoelectric film with high output, a preparation andapplication method thereof. A layer-by-layer solution spin coating-heat treatment process is adopted, an inorganic piezoelectric material is used as the filler to enhance the piezoelectric output of the composite film, and the double-layer structure is utilized to acquire high output and good mechanical properties at the same time. The inorganic filler is nanoparticles or nanofiber of barium titanate, barium strontium titanate, lead zirconate titanate and other piezoelectric ceramics, or nanoparticles or nanofiber of magnesium oxide, zinc oxide and other metal oxides, or multiwalled carbon nanotube. The polymer matrix can be polyvinylidene fluoride, polyvinylidene fluoride-trifluoroethylene, polyvinylidene fluoride-trifluoroethylene-hexafluoropropylene and other materials. By adjusting thefiller content and the filler distribution in the double layers, the filler efficiency can be improved. The composite material has the characteristics of good flexibility, high piezoelectric output,high sensitivity and light weight, and can be used as a power supply of wearable equipment, as a flexible sensor to detect human activities and the like.

The invention discloses a modified grapheme/thermosetting resin composite material and a preparation method thereof. The preparation method comprises the following steps: adding a hydrochloric acid doped polyaniline modified carbon nano tube to oxidized grapheme aqueous dispersion, filtering, washing and drying the reactant to obtain the modified grapheme, uniformly mixing the modified grapheme with molten resin capable of thermosetting, and solidifying the mixture, so as to obtain the modified grapheme/thermosetting resin composite material. The modified grapheme provided has a micro capacitance structure; the hydrochloric acid doped polyaniline modified carbon nano tube is loaded on the surface of the grapheme through Pi to Pi conjugation; the excellent electrical property of the grapheme is maintained; the lamellas of the grapheme are prevented from mutually contacting; the obtained modified grapheme/thermosetting resin composite material has the advantages of high dielectric constant, low dielectric loss, and low percolation threshold, and can realize control on the dielectric property of the composite material by adjusting the variation of the content of the hydrochloric acid doped polyaniline modified carbon nano tube coated on the surface of the grapheme.

The present invention discloses a super low temperature sintered ceramic medium material, manufacturing method thereof and multi-layer sheet type ceramic capacitor made therefrom. The ceramic medium material of the invention is a lead-free environment protective material, comprising major component of BaNd2+XTi5O14+1.5X, wherein the value of X is between 0.001 and 0.2, and secondary component of B2O3, Al2O3, SiO2, CaO and ZnO, furthermore, it can also comprises SnO and one or more compounds selected from K2O, ZrO2, Fe2O3 and MgO. The chip of the ceramic capacitor can be sintered under lower temperature of 860 to 900 degrees centigrade, and can match with complete-Ag or low Pd contained Ag-Pd alloy interior electrode, thereby greatly reducing the production cost of MLCC. The dielectric constant of the ceramic capacitor is between 15 and 25, the dielectric property complies with EIA standard and meets COG characteristics.

A resistance change memory device with a high ON/OFF ratio can be provided.

A resistance change memory device according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.

The invention belongs to the field of composite materials, and relates to the improvement of a preparation method of high-dielectric-constant ceramics/polymer-based composite dielectric materials. The preparation method comprises the following steps of filler pretreatment, material proportioning, raw material mixed liquid preparation, film coating, and hot pressing and molding. Through the novel method for preparing the high-dielectric-constant ceramics/polymer-based composite dielectric materials, provided by the invention, the dielectric constant of the composite dielectric materials is improved.

The invention discloses a carbonyl-containing material-coated barium titanate/polymer composite film and a preparation method thereof and application. The carbonyl-containing material-coated barium titanate/polymer composite film is prepared through the following method which comprises a step 1) of mixing dispersion liquid of nanometer barium titanate and a carbonyl-containing material, and obtaining composite nanoparticles coating the carbonyl-containing material; a step 2) of dispersing the composite nanoparticles coating the carbonyl-containing material into polymer composited solution, and obtaining mixed dispersion liquid; a step 3) of causing the mixed dispersion liquid in the step 2) to undergo tape casting, removing a solvent to form a film, and then causing the film to undergo hot pressing and cooling to obtain the carbonyl-containing material-coated barium titanate/polymer composite film. The carbonyl-containing material-coated barium titanate/polymer composite film can achieve high dielectric constant (30 or above), high electric breakdown strength (250 MV/m or above) and high discharge density are guaranteed, and the flexibility of the capacitor composite film is maintained. The carbonyl-containing material-coated barium titanate/polymer composite film is applied to the preparation of a flexible electronic device.

A phased array antenna includes a substrate, and an array of dipole antenna elements are on the substrate. Each dipole antenna element includes a medial feed portion, and a pair of legs extending outwardly therefrom. Each dipole antenna element further includes a passive load, and a switch connected thereto for selectively coupling the passive load to the medial feed portion so that the dipole antenna element selectively functions as an absorber for absorbing received signals while the passive load dissipates energy associated therewith.

Conductive powder and paste compositions are formed having desirable electrical and physical properties. The conductive powder and paste compositions may be used in combination with dielectric powder and thick-film paste compositions, which are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties, to form capacitors and other fired-on-foil passive circuit components.

There is provided a non-volatile semiconductor memory having a charge accumulation layer of a configuration where a metal oxide with a dielectric constant sufficiently higher than a silicon nitride, e.g., a Ti oxide, a Zr oxide, or a Hf oxide, is used as a base material and an appropriate amount of a high-valence substance whose valence is increased two levels or more (a VI-valence) is added to produce a trap level that enables entrance and exit of electrons with respect to the base material.

The invention discloses a high-dielectric-constant microwave ferrite material, a preparation method and a microwave communication device. The chemical formula of the microwave ferrite material is Bi<1.25>Ca<0.25+2x>Y<1.5-2x>Zr<0.25>Al<x>Mn<y>Fe<4.75-x-y>, x is greater than or equal to 0.05 and less than or equal to 0.3, and y is greater than or equal to 0.05 and less than or equal to 0.15. The preparation method comprises the following steps: preparing raw materials according to the molecular formula Bi<1.25>Ca<0.25+2x>Y<1.5-2x>Zr<0.25>Al<x>Mn<y>Fe<4.75-x-y> (0.05<=x<=0.3, and 0.05<=y<=0.15),and preparing the microwave ferrite material by using the raw materials. The dielectric constant of the high-dielectric-constant microwave ferrite material is about 28, 4piMs is 1850-1950 Gs, delta His 45-50 Oe, Tc is 200 DEG C or above, and the miniaturization and integration application of a microwave circulator and an isolator can be well met.

An ultrafine metal oxide particle dispersion liquid is prepared by mixing an ultrafine titanium-based composite metal oxide particle dispersion liquid prepared by hydrolysis in a microemulsion containing a hydrophobic dispersion medium, water, and a surfactant and an organic metal compound solution for the same titanium-based composite metal oxide at a ratio of 1:1 to 1:30 in terms of the composite metal oxide contained.

The invention relates to a polymer composite material embedded microcapacitor and a preparation method thereof, belonging to the technical field of the novel microelectronic material and element. The microcapacitor comprises an upper electrode, a dielectric film and a lower electrode which are stacked in turn, wherein the dielectric film is prepared from polyimide/barium titanate (PI/BT) composite material. The method of the invention comprises the following steps: adopting the in-situ polymerization method to disperse BT nanoparticles in PI and prepare the PI/BT composite material of the dielectric film; adopting the casting method to stick the PI/BT composite material to a copper plate substrate, coating a layer of photoresist on the obtained dielectric film, performing ultraviolet exposure according to a template drawing to obtain patterned photoresist; sputtering a metal layer on the dielectric film and photoresist; soaking in acetone solution to form the patterned upper electrode; performing RIE treatment in the mixed gas of oxygen and trifluoromethane, and cleaning with ultrasonic wave to obtain the microcapacitor. By using the method of the invention, the uniform and dense dielectric film with large area can be obtained; and the microcapacitor can work stably at a higher temperature or a lower temperature.

The invention relates to the technical field of inorganic non-metal materials, and particularly discloses a low temperature sintered ceramic capacitor medium with small giant dielectric capacitance temperature change rate and a preparation method thereof. The medium formula comprises the following components: 88 to 96 wt. % of CaCu3Ti4O12, 0.01 to 7.0 wt.% of (Ba0.65Sr0.35) TiO3, 0.01 to 0.6 wt. % of Nd2O3, 0.1 to 4 wt. % of SiO2-Li2O-B2O3 glass powder, 0 to 0.5 wt. % of MnO2, and 0.5 to 4 wt. % of (Li1/2Na1/2) NbO3, wherein CaCu3Ti4O12, (Ba0.65Sr0.35) TiO3, (Li1/2Na1/2) NbO3 and SiO2-Li2O-B2O3 glass powder (SLB) are respectively compounded by conventional chemical raw materials through a solid phase method. According to the invention, common chemical raw materials of capacitor ceramic are adopted to prepare the lead-free and cadmium-free ceramic capacitor medium with small giant dielectric capacitance temperature change rate, the sintering temperature of the capacitor ceramic is greatly reduced, and the medium is applicable to the preparation of monolithic ceramic capacitors.

The invention relates to a lead barium niobate sodium-based glass ceramic material with high energy density, and a preparation method thereof. The ceramic particles are mainly prepared from the components: perovskite-phase NaNbO3 and tungsten bronze-phase Ba2NaNb5O15. The glass ceramic energy storage material is prepared from the chemical components meeting a chemical general formula of 6.4Na2CO3-23.04BaCO3-2.56PbO-32Nb2O5-36SiO2. The preparation method comprises the steps of adopting Na2CO3, BaCO3, PbO, Nb2O5 and SiO2 as raw materials, rolling and mixing, drying, then melting at high temperature to obtain a glass melt; quickly pouring the high-temperature melt into a preheating mold, preserving heat for multiple hours in a constant-temperature furnace body so as to remove residual stressin quenching glass, and then cutting a glass block into glass slices with equal sizes and thicknesses; carrying out controlled crystallization on the glass slices, and obtaining the glass ceramic energy storage material. The lead barium niobate sodium-based glass ceramic energy-storage material is applied to an energy-storage capacitor material. Compared with the prior art, the ceramic energy-storage material prepared by the invention has the advantages of high dielectric constant and energy density, wide heat treatment temperature range and the like.

A surface mount device multiple-band antenna module includes a substrate and a carrier. The substrate has a first grounding metal surface and a first micro-strip line on a side thereof. The first grounding metal surface has a second micro-strip line connected thereto. There is a space between the first micro-strip line and the second micro-strip line. The substrate has a second grounding metal surface on the other side thereof The carrier is made of ceramic material with high dielectric constant, which has a first radiative metal portion, a second radiative metal portion and a third radiative metal portion. The carrier is electrically connected with the substrate. The joint of the first radiative metal portion and the second radiative metal portion is electrically connected to the first micro-strip line. The third radiative metal portion is electrically connected to the second micro-strip line. Thus, the multiple-band antenna module is obtained.

The invention provides a display module and a mobile terminal. The display module comprises a screen cover plate, a first antenna array, a first flexible circuit board and a first radio frequency integrated circuit; the first antenna array is arranged in a first area of the screen cover plate; and the first radio frequency integrated circuit is arranged on the first flexible circuit board and is electrically connected with the first antenna array through the first flexible circuit board. The antenna array designed by the embodiment of the invention does not need to occupy the space of other antennas arranged on the rear cover of the mobile terminal, so that the performance of the antennas is improved.

The invention discloses a high-d33 lead-free strontium calcium niobate sodium tungsten bronze piezo-ferroelectric ceramic material and a preparation method thereof. The general formula of the ceramic material is Sr1.85Ca0.15NaNb5O15+x wt.%M, wherein M is Bi2O3, CuO or Li2CO3, and x is 0.1-0.25. The Bi, Cu and Li are doped to modify Sr1.85Ca0.15NaNb5O15, thereby greatly enhancing the d33 of the Sr1.85Ca0.15NaNb5O15-system dielectric ceramic. The lead-free strontium calcium niobate sodium tungsten bronze piezo-ferroelectric ceramic material has lower dielectric loss, higher maximum dielectric constant and obviously higher relaxation property, i.e., the ceramic material has higher dielectric constant within a wider temperature range. Besides, the ceramic material has favorable ferroelectric properties. The doping modification is adopted to lower the coercive field, so that the high-temperature air is polarized, thereby greatly enhancing the d33 of the ceramic material and futher displaying the piezoelectric properties of the ceramic material. The preparation method of the ceramic material is simple, and has the advantages of high repetitiveness and high yield.

A semiconductor device includes a gate insulation film that is formed of pyroceramics including an amorphous matrix layer, which is provided on a major surface of a silicon substrate, and crystalline phases lines with a high dielectric constant, which are dispersed in the amorphous matrix layer. The semiconductor device further includes a gate electrode that is provided on the gate insulation film.