74results about How to "High dielectric constant" patented technology

The invention discloses a polypropylene composite material with high dielectric constant, high strength and high modulus as well as a preparation method and application thereof, and belongs to the technical field of polymer composite materials. According to the composite material, homo-polypropylene is used as a matrix and matched with a high-dielectric-constant composite filler, a modified reinforcing filler and a functional additive, and through reasonable component design and process optimization, the dielectric property and the mechanical property are synergistically improved. Wherein the barium titanate-graphene with the core-shell structure is used as a high-dielectric-constant composite filler, and an efficient dielectric path can be constructed in a polypropylene matrix; the epoxy resin modified chopped glass fiber can significantly enhance the mechanical strength and modulus of the material; the maleic anhydride grafted polypropylene effectively improves the interfacial compatibility of the filler and the matrix. The dielectric constant (10GHz) of the prepared composite material is greater than or equal to 8, the tensile strength is greater than or equal to 60 MPa, and the bending modulus is greater than or equal to 4000 MPa. The composite material has excellent dielectric properties and mechanical properties, and can be widely applied to the fields of electronic appliances, high-frequency communication, new energy automobiles and the like.

The application discloses a preparation method of a ternary hybrid micro-nano particle / encapsulated flame-retardant heat-conducting epoxy composite material with a branch-leaf structure, and belongs to the technical field of micro-nano particle modified hybrid and preparation of flame-retardant heat-conducting composite materials. The application provides a preparation method of an encapsulated epoxy composite material with a branch-leaf structure hybrid nano particle, in which boron nitride nano sheets with excellent heat-conducting and flame-retardant properties are selected as leaf structures, the surfaces of the boron nitride nano sheets are modified by aluminum oxide microspheres with excellent heat-conducting properties, and silicon carbide nano wires with excellent heat-conducting properties are selected as branch structures, so that the branch-leaf structure hybrid nano particle is constructed, and the encapsulated epoxy resin composite material with excellent heat-conducting and flame-retardant properties is prepared.

This invention discloses a high thermal conductivity PCB metal substrate and its preparation method, relating to the field of PCB manufacturing technology. The high thermal conductivity PCB metal substrate of this invention comprises at least a metal base layer and a thermally conductive dielectric layer; the thermally conductive dielectric layer comprises at least the following raw materials in parts by weight: 100 parts of 1,5-naphthol modified epoxy resin; 20-35 parts of bismaleimide; 10-25 parts of diallyl biphenyl ester; 20-50 parts of cyanate ester; 20-50 parts of bismaleimide-coated aluminophosphate passivated aluminum nitride@boron nitride composite thermally conductive filler; 5-15 parts of bismaleimide-octavinyl cage-type polysilsesquioxane composite porous microspheres; 20-35 parts of curing agent; and 0-10 parts of diluent. The PCB metal substrate prepared by this invention possesses high thermal conductivity, low dielectric constant, high interfacial peel strength, and excellent heat resistance.

The invention discloses a sulfur-free FR-4 copper-clad plate and a preparation method thereof, and belongs to the technical field of copper-clad plates. The copper-clad plate is prepared from sulfur-free epoxy resin, a sulfur-free curing agent, a sulfur-free flame retardant, organic silicon hybrid macromolecules, tetrafunctional epoxy resin, linear phenolic resin, microencapsulated ammonium polyphosphate, melamine cyanurate, surface grafting modified boehmite nanorods and filler. Through the design of a sulfur-free system, the sulfur content of the product is lower than 50 ppm, and the problems of contact resistance increase, unstable signal transmission and the like caused by sulfide migration of a traditional FR-4 copper-clad plate in a high-temperature and high-humidity environment are thoroughly solved. Meanwhile, the organic silicon hybrid macromolecules and the high-functionality epoxy resin have a synergistic effect, so that the balance of high glass transition temperature and high toughness is realized. The copper-clad plate has excellent dielectric property, flame retardant property and long-term reliability, and meets the development requirements of high reliability and high performance of electronic products.

The invention discloses a high-dielectric low-loss dielectric material for a high-voltage ceramic capacitor, and relates to the technical field of dielectric materials, which comprises the following steps: S1, preparing bismuth stannate; step S2, preparation of bismuth titanate; step S3, preparation of barium zirconate; step S4, compression molding and sintering; and S5, printing an electrode. The high-dielectric low-loss dielectric material for the high-voltage ceramic capacitor is high in dielectric constant and low in dielectric loss, and meets N4700 temperature characteristics and environmental protection requirements.

This invention belongs to the field of solid-state electrolyte technology, specifically relating to a high-pressure resistant composite polymer solid-state electrolyte, its preparation method, and its application. The solid-state electrolyte comprises: a high-pressure resistant terpolymer, a PVDF-based polymer, mullite filler, and a lithium salt; the high-pressure resistant terpolymer is prepared from a high-pressure resistant additive, a crosslinking agent, ethylene ethylene carbonate monomer, and an initiator; the high-pressure resistant additive is selected from at least one of propylene-1,3-sulfonyl lactone, cyclobutene sulfone, and 3-methyl-3-cyclobutene sulfone. The preparation method is as follows: the high-pressure resistant additive, crosslinking agent, initiator, lithium salt, and ethylene ethylene carbonate monomer are mixed to obtain a precursor solution; the PVDF-based polymer and mullite filler are stirred and mixed in a solvent, coated into a film, and vacuum dried to obtain a base film; the base film is immersed in the precursor solution, and after immersion, it is cured to obtain the high-pressure resistant composite polymer solid-state electrolyte.

The invention provides a preparation method of a high-compaction high-capacity lithium iron phosphate material, which comprises the following steps: (1) mixing polyvinyl alcohol, iron phosphate, a lithium source, a carbon source and water to obtain slurry A; mixing iron phosphate, a lithium source, a carbon source and water to obtain slurry B; (2) performing spray drying on the slurry A, and performing low-temperature sintering to obtain a black material C; performing spray drying on the slurry B, and performing high-temperature sintering to obtain a black material D; and (3) mixing the black material C and the black material D, crushing, adding barium titanate, carrying out ball milling, and drying to obtain the lithium iron phosphate material. The polyvinyl alcohol is partially acetylated modified polyvinyl alcohol. The sintering temperature is reduced by adding the modified polyvinyl alcohol to prepare the compact lithium iron phosphate material with smaller particle size, and the lithium iron phosphate material and the lithium iron phosphate material obtained by high-temperature sintering form grading of large and small particles, so that the compaction density of the lithium iron phosphate is improved.

This invention belongs to the field of composite material technology, specifically disclosing a high-dielectric-constant, low-dielectric-loss polyphenylene sulfide composite material, its preparation method, and its applications. The composite material comprises the following components in parts by weight: 100 parts of polyphenylene sulfide matrix, 10-60 parts of high-dielectric-constant nanofiller, 0.5-8 parts of metal nanoparticles, and 0.5-5 parts of surface modifier. This invention utilizes the aforementioned high-dielectric-constant, low-dielectric-loss polyphenylene sulfide composite material, its preparation method, and its applications. The composite material exhibits a high dielectric constant and achieves low dielectric loss. It also enhances its mechanical strength and toughness, enabling the composite material to maintain its electronic properties while possessing excellent physical properties.

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

The invention relates to a perovskite solar cell. The perovskite solar cell comprises a perovskite light absorption layer and a light-emitting passivation layer arranged on the surface of the perovskite light absorption layer, and the light-emitting passivation layer has a zero-dimensional perovskite structure. The light-emitting passivation layer with the zero-dimensional perovskite structure has excellent environmental stability and is beneficial to protecting the perovskite light absorption layer, so that the environmental stability of the solar cell is improved, the high photoluminescence quantum yield of the light-emitting passivation layer is beneficial to reducing non-radiative recombination of current carriers, the efficiency of the solar cell is improved, and the service life of the solar cell is prolonged. Moreover, the introduction of the light-emitting passivation layer can prolong the service life of carriers of the solar cell, prolongs the transmission time of the carriers, and improves the photoelectric conversion efficiency of the solar cell.

The invention provides a high-k gate dielectric composite material, a preparation method thereof and a beta-Ga2O3 MOS (Metal Oxide Semiconductor) power device. The composite material comprises a beta-Ga2O3 substrate; the SiO2 interface buffer layer is formed on at least one surface of the beta-Ga2O3 substrate; the Al2O3 transition layer is formed on the surface of the SiO2 interface buffer layer; the AlON interface layer is formed on the surface of the Al2O3 transition layer; and the HfO2 high-k main dielectric layer is formed on the surface of the AlON interface layer. Experimental results show that the composite material provided by the invention has a dielectric constant of 15-30, a forbidden bandwidth of greater than 5eV, an interface state density of less than 1 * 10 < 12 > cm <-2 > eV <-1 > and a breakdown field strength of 7MV / cm-15MV / cm, can effectively improve the interface characteristics of a beta-Ga2O3 MOS power device when being used for the beta-Ga2O3 MOS power device, improves the reliability of a gate medium, and is suitable for being applied to high-voltage and high-temperature power devices.

The invention discloses a polyimide dielectric film containing carboxyl betaine and a preparation method thereof. The carboxyl betaine-containing polyimide dielectric film is prepared from carboxyl betaine-containing polyimide, and the carboxyl betaine-containing polyimide is prepared by the following steps: firstly, taking a precursor of carboxyl betaine, m-phenylenediamine and bisphenol a type diether dianhydride as monomers, and carrying out condensation polymerization to obtain polyamide acid; carrying out complete imidization on the polyamide acid under the action of a catalyst isoquinoline to obtain polyimide containing a precursor; and reacting the polyimide containing the precursor with sodium bromoacetate to obtain polyimide containing carboxyl betaine. The zwitterions are introduced into the polyimide structure to improve the dielectric and energy storage performance of the polyimide dielectric film, and meanwhile, the preparation method has the advantages of being low in cost, simple in process, controllable and adjustable in performance, suitable for large-scale application and the like.

The present application belongs to the technical field of batteries, and particularly relates to a secondary battery. The secondary battery provided by the present application comprises a positive electrode plate, a negative electrode plate and electrolyte, wherein the electrolyte comprises an organic solvent, and the organic solvent comprises a cyclic ester solvent and a chain ester solvent; the secondary battery parameter satisfies Formula (1). The secondary battery has good dynamic performance at low temperature, and has good capacity retention rate and lower impedance under the low temperature condition by adjusting the electrolyte and the negative electrode plate and the combined action of the electrolyte and the negative electrode plate.

A dielectric 10 of the present disclosure includes a tantalum compound containing fluorine and oxygen and being amorphous, and is advantageous in terms of achieving a high dielectric constant.

The invention relates to the technical field of dielectric films, and discloses a polypropylene dielectric film based on fluorinated polypropylene particles, a preparation method and application, and the preparation method comprises the following steps: step 1, mixing polypropylene and surface fluorinated polypropylene to form a mixture; the mixture comprises 70-95 parts of polypropylene and 5-30 parts of surface fluorinated polypropylene; the total amount of the mixture is 100 parts; 2, performing melt blending and hot press molding on the mixture obtained in the step 1 to obtain a to-be-stretched sheet; and step 3, performing bidirectional synchronous biaxial stretching on the to-be-stretched sheet to obtain the required dielectric film. According to the invention, the fluorinated polypropylene particles and the polypropylene matrix are mixed, so that the phase boundary or agglomeration phenomenon can be obviously avoided; after the fluorine group is introduced, due to the high dipole moment of the fluorine group, the fluorine group can induce stronger oriented polarization under the action of an alternating electric field, electron traps are formed on the surface and in the film, the dielectric constant of the film is effectively improved, and conduction loss is inhibited.

The present application relates to a kind of cross-linkable cycloolefin copolymer and its preparation method and application.The preparation method is by copolymerization of norbornene and its derivatives and dicyclopentadiene, and the obtained polymer is prepared into film in the way of solution casting, finally the formation of polymer cross-linking structure is initiated by heat treatment.The polymer is prepared by the second generation Grubbs catalyst to initiate monomer ring-opening metathesis polymerization, norbornene and its derivatives in the polymer can adjust the polarization intensity of polymer under high electric field, dicyclopentadiene can provide cross-linking site, so that cross-linking structure is formed in polymer film.The dielectric film prepared in the present application has excellent thermal stability and energy storage performance, still maintains high breakdown strength, high energy storage density, high charge-discharge efficiency and good structure stability at 150 DEG C, suitable for energy storage capacitor and other electronic devices working in high temperature environment.

The invention discloses a BaTiO3-based high dielectric ceramic with a positive temperature coefficient at a low temperature, and belongs to the field of dielectric ceramic preparation. The BaTiO3-based high-dielectric ceramic is formed by sintering a substrate BaTiO3 and dopants MgO, XaOb, MnO2, RcOd, SiO2 and YeOf, the molar ratio of BaTiO3: MgO: XaOb: MnO2: RcOd: SiO2: YeOf is 100: x1: x2: x3: x4: x5: x6, a doping element X is at least one of Nb, W and Mo, a doping element R is at least one of rare earth elements La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Tm, Yb and Lu, and a doping element Y is at least one of Fe, Co and Ni; a, b, c, d, e and f are atomic ratio numbers. The BaTiO3-based dielectric ceramic of the system has a positive temperature coefficient at a low temperature, an ultrahigh dielectric constant between 4000 and 4600, dielectric loss of about 1% and high dielectric property, can meet the application of MLCC (Multiplayer Ceramic Chip Capacitors) and wafer capacitors, remarkably reduces the product size, reduces the circuit board volume, and is beneficial to miniaturization and lightweight design of electronic products.

The invention relates to an iron-based gyromagnetic material calculated based on a first principle and a screening method thereof, the crystal structure of the material is a garnet structure, and the chemical general formula of the material is Sr < x > Y < 3-x > Scy Fe < 5-y > O < 12 >, the value range of x is 0 lt; xlt; 3, the value range of y is 0 lt; yt; Yt; 5. On the basis of a first principle calculation result, a specific doping combination capable of remarkably improving the dielectric constant and improving the saturation magnetization intensity is screened out, namely, a double-ion co-doping strategy that c site is replaced by Sr and a site is replaced by Sc is adopted. According to the method, experiments are guided through theoretical calculation, the problems that a traditional trial-and-error method is long in period and large in blindness are effectively solved, and the iron-based gyromagnetic material with excellent electromagnetic performance is obtained.

The application discloses a kind of halogen-free high-frequency copper-clad plate and its manufacturing method, belong to copper-clad plate preparation technical field, manufacturing method is as follows: fluorine-containing mercaptan grafting polybutadiene, styrene-butadiene-styrene copolymer, dicyclopentadiene phenol epoxy resin, toluene, butanone, propylene glycol monomethyl ether are added into mixing machine, after stirring and mixing, initiator, active ester curing agent, diamond-based flame-retardant filler are added, stirring and mixing 2-4h, obtain resin glue liquid;Glass cloth is placed in resin glue liquid and immersed after taking out, baking, obtain prepreg;Prepreg is laminated, the copper-clad plate obtained by the application has lower dielectric constant, better flame-retardant property, higher heat dissipation performance, lower water absorption and good mechanical processing, etc.Advantages, in the field of communication, vehicle-mounted millimeter wave radar, internet of things, automobile electronics and other fields of high multilayer high-frequency circuit board have broad application prospect.

This invention belongs to the field of photoresist technology, specifically relating to a compound containing a multifunctional polysiloxane structure and its applications. The structural formula is selected from general formula I or general formula II. Based on an organosiloxane polymer, this invention introduces multifunctional reactive functional groups into the polymer structure through transesterification and free radical addition reactions. The hydrophilic / hydrophobic properties, temperature resistance, and chemical resistance can be improved by adjusting the types of monomers introduced. This compound is used to prepare a photoresist composition with a solvent, a monomer with ethylene unsaturated bonds, a photosensitizer, and other additives. This photoresist exhibits advantages such as low dielectric constant, good adhesion, high residual film rate, good UV transmittance, good patterning, and good chemical resistance.

The application provides a high-reliability underfill encapsulation intelligent forming control method and system, relates to the technical field of package manufacturing, and converts the electric field intensity into a target filler concentration distribution through finite element simulation of electric field distribution of the package under working voltage. The electric field is used to drive the directional migration of the filler in the photocuring resin, so that the dielectric constant of the corresponding area is enhanced, the deviation of the filler distribution caused by flow channel fluctuation and viscosity change in the dispensing filling process is avoided, the breakdown risk is reduced, and meanwhile, a high-frequency alternating current signal is embedded in the filling process to realize real-time inversion of the filler concentration of each node. Through dynamic fine adjustment of the driving voltage by minimizing the loss function, the deviation is corrected, errors caused by filler batch differences are avoided, and the filler distribution meets the requirements.

The invention discloses an X8R type high-reliability ceramic dielectric material with a double-shell design and a preparation method and application thereof, and belongs to the technical field of electronic ceramic materials. According to the ceramic dielectric material, barium titanate is used as a main body material, at least one of Y2O3 and Dy2O3 is used as a first dopant, and at least one of MgO and MnO2 is used as a second dopant. The preparation method comprises the following steps: pre-sintering BaTiO3 and a first doping agent at a high temperature; and then adding a second doping agent for secondary mixing and high-temperature sintering. According to the method, a double-shell structure of a tetragonal phase crystal nucleus, a rare earth-rich inner shell layer and an Mg / Mn-rich outer shell layer is constructed in ceramic crystal grains. The high dielectric property of the BaTiO3 crystal nucleus is reserved, the rare earth-rich inner shell layer is used for inhibiting oxygen vacancy long-range migration, the Mg / Mn-rich outer shell layer is used for optimizing temperature stability, synergistic improvement of the high dielectric constant (epsilon r gt, 2200), X8R wide-temperature stability (delta C / C 25 DEG C is smaller than or equal to + / -15%, minus 55-150 DEG C) and high breakdown field strength (larger than or equal to 6.7 kV / mm) is achieved, and the high-dielectric-temperature-stability high-voltage-resistant MLCC is suitable for manufacturing the high-dielectric-temperature-stability high-voltage-resistant MLCC.

This utility model discloses a real-time clock circuit and a Beidou receiver, relating to the field of electronic circuit technology. The disclosed real-time clock circuit includes an energy storage module and a timing module. The energy storage module includes at least one electrolytic capacitor, which has a porous anode substrate structure and a dielectric constant higher than a preset dielectric constant. The timing module is connected to both the electrolytic capacitor and a power supply. This utility model utilizes the electrolytic capacitor to store energy when connected to a power supply, receiving the output voltage from the power supply and outputting the stored energy voltage to the timing module when the power supply is disconnected. The porous anode substrate structure of the electrolytic capacitor, with a dielectric constant higher than a preset dielectric constant, enables the storage of more energy in a short time, ensuring longer time recording even after the Beidou receiver is powered off, thus providing a reliable time reference for the long-term operation of the Beidou receiver.

This invention provides a triboelectric nanogenerator and its fabrication method. The generator operates in a vertical contact-separation mode, with a positive friction layer of PET film and a negative friction layer of PDMS composite film with a single layer of dense SiO₂ microspheres inserted on its surface. The fabrication process employs a two-step spin-coating method: first, a PDMS solution is spin-coated onto a substrate; then, a suspension of SiO₂ microspheres is spin-coated onto the uncured surface. After heating and curing, a composite negative friction layer is formed, which is then assembled with electrodes and a support structure. This invention significantly increases the triboelectric contact area and enhances charge trapping capability by constructing the SiO₂ microsphere insertion layer, thereby greatly improving output performance. Furthermore, the fabrication process is simple and low-cost, making it suitable for powering microelectronic devices and self-powered sensing applications.

This invention relates to the field of ceramic materials technology, specifically to a double-layer microwave dielectric ceramic material and its preparation method. The invention controls the shrinkage rate by increasing the pre-firing temperature, controlling the component lamination pressure, and controlling the sintering process, thus preparing a microwave dielectric ceramic material with a smooth surface and dense interior. This material not only retains the advantageous properties of each single-layer material, such as high dielectric constant and good temperature stability, but also achieves complementary and enhanced performance through the design of the lamination structure. This material not only possesses advantages such as high dielectric constant and high thermal stability, but also features a simple preparation process and low cost, thereby solving the problem of complex manufacturing processes and high production costs of existing double-layer microwave dielectric ceramic materials.

This invention discloses a ternary amorphous insulating dielectric film, its preparation method, and its applications. The ternary amorphous insulating dielectric film is composed of a material with the chemical formula Al(X)N, ​​where X is selected from any one or a combination of two or more of B, Si, Zr, and Zn. The ternary amorphous insulating dielectric film has a disordered amorphous structure. This invention uses pulsed laser deposition technology to prepare the ternary amorphous insulating dielectric film. The preparation method is simple and controllable. The prepared ternary amorphous insulating dielectric film exhibits high thermodynamic stability, high dielectric constant, and low leakage current density. It can serve as an insulating material resistant to repeated impacts from strong electric fields and high currents, and is heat-resistant, showing great promise for applications in the semiconductor field.

The invention relates to a zinc-lithium dication type deep eutectic electrolyte and application thereof in a zinc-lithium hybrid battery, and the zinc-lithium dication type deep eutectic electrolyte is composed of nitrogen-containing coordination small organic molecules, an organic lithium salt and an organic zinc salt and does not contain water at all. Compared with the traditional deep eutectic electrolyte taking urea and other inorganic small molecules as hydrogen bond donors, the nitrogen-containing coordination organic small molecules have higher dielectric constants, and nitrogen-containing functional groups in the molecules can form strong ion-dipole interaction with counter anions of organic salt, so that coulomb attraction between anions and cations is effectively shielded; the organic salt is promoted to generate high dissociation, so that the deep eutectic electrolyte is endowed with relatively high ionic conductivity and relatively wide electrochemical window (relative to Zn / Zn < 2 + >). Meanwhile, the deep eutectic electrolyte has the advantages of being simple in preparation process, easy to produce on a large scale and the like. The deep eutectic electrolyte can be used for manufacturing the zinc-lithium hybrid battery.

The application discloses a dielectric material and a preparation method and application thereof. The dielectric material comprises a core, a first coating layer coated on the surface of the core, and a second coating layer coated on the surface of the first coating layer. The core comprises BaTiO3. The first coating layer comprises MgO, M1, and M2. The second coating layer comprises (Ca (1‑x‑y) Ba x Sr y )ZrO3 and R2O3. In the (Ca (1‑x‑y) Ba x Sr y )ZrO3, 0<=x<=1 and 0<=y<=1. The dielectric material has high dielectric strength, high dielectric constant, and excellent dielectric-temperature characteristics, and can be used for manufacturing high-voltage and high-capacity chip multilayer ceramic capacitors.

The invention discloses an electrostatic chuck, semiconductor processing equipment and a manufacturing method. The electrostatic chuck comprises an electrode layer; the dielectric layer is arranged above the electrode layer; the dielectric layer is prepared from a mixture comprising a high dielectric constant material and an insulating material; the high-dielectric-constant material is whisker-shaped, and the dielectric constant of the high-dielectric-constant material is greater than that of the insulating material; the mass percent of the high dielectric constant material in the mixture is 0.5%-1%. According to the invention, the dielectric constant of the dielectric layer in the electrostatic chuck can be improved, and the capacitance formed between the wafer and the electrostatic chuck is increased, so that the radio frequency energy distributed in the electrostatic chuck is reduced, and the radio frequency energy distributed in the sheath layer is increased, thereby ensuring that the process processing result of the wafer meets the requirement.

A display device is provided, including a first passivation layer to a third passivation layer, wherein a second passivation layer is not exposed to the outside through the first passivation layer and the third passivation layer, and wherein the dielectric constant of the second passivation layer is higher than the dielectric constant of each of the first passivation layer and the third passivation layer.