2042results about How to "Suppress mutation" patented technology

Porous bioabsorbable, bioactive and load-bearing composite medical device structure includes a plurality of regular textile planar layers (1a, 1b . . . ) formed of continuous bioabsorbable polymer matrix and bioceramic fibers acting as reinforcements, both included in continuous fibrous elements (3) forming the textile layers. The layers are placed on top of each other to form a structure having two dimensions (x, y) at right angles to each other according to the two dimensions of the textile layer and a third dimension (z) perpendicular to them and resulting from the piling of the layers. A plurality of passages extend through the layers as a result of the openings (2) defined by portions of the continuous fibrous elements (3) extending substantially in the direction of the plane. The continuous fibrous elements (3) comprise both bioactive ceramic reinforcing fibers which form a reinforcing structure and a bioabsorbable polymer matrix material which forms a matrix which binds the layers together and also binds the portions of continuous fibers defining the openings together, thereby forming the passages and stiffening the structure. This bioactive and bioabsorbable composite structure is suitable to be used as a basic structure in medical devices, especially in osteochondral applications where the load-bearing properties of implant are required.

A pulse oximetry sensor comprises emitters configured to transmit light having a plurality of wavelengths into a fleshy medium. A detector is responsive to the emitted light after absorption by constituents of pulsatile blood flowing within the medium so as to generate intensity signals. A sensor head has a light absorbing surface adapted to be disposed proximate the medium. The emitters and the detector are disposed proximate the sensor head. A detector window is defined by the sensor head and configured so as to limit the field-of-view of the detector.

A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

An object is to suppress differences in concentration between processing gases supplied to a plurality of works in a chemical solution vaporizing tank. The chemical solution vaporizing tank includes a tank body having a plurality of vaporizing chambers formed by laterally and airtightly partitioning an internal space of the tank body, a chemical solution passage located under a liquid level in each vaporizing chamber and formed at each partition member for passing the chemical solution between the vaporizing chambers, and a gas passage located above the liquid level in each vaporizing chamber and formed at the partition member to communicate the vaporizing chambers with each other for uniformizing pressures in the respective vaporizing chambers. A quantity of the channel layer in each vaporizing chamber is controlled by managing, e.g., the liquid level.

A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

In a source driver (14) provided in an electroluminescent (EL) display device of the present invention, the gate voltage of a first-stage current source formed by a transistor (631) is applied to the gate of a transistor (632a) which is a second-stage current source situated next to the transistor (631) and, as a result, a current flowing through the transistor (632a) is transferred to a transistor (632b) which is a second-stage current source. In addition, the gate voltage of the transistor (632b) is applied to the gate of a transistor (633a) which is a third-stage current source situated next to the transistor (632b) and, as a result, a current flowing through the transistor (633a) is transferred to a transistor (633b) which is a third-stage current source. The gate of the transistor (633b) is provided with a large number of current sources (634) corresponding to the number of bits required.

A non-contact wireless communication apparatus and a mobile terminal apparatus are provided. The non-contact wireless communication apparatus includes a non-contact wireless communication antenna, a resonance capacitor, connected in parallel with the non-contact wireless communication antenna, for obtaining a predetermined resonance frequency with the non-contact wireless communication antenna, a resonance frequency adjustment unit for changing a resonance capacitance of the resonance capacitor to adjust the resonance frequency, a capacitance change amount control unit for controlling a change in resonance capacitance of the resonance capacitor in the resonance frequency adjustment unit, a resonance frequency shift unit for shifting the resonance frequency of the non-contact wireless communication antenna, and on / off control unit for performing on / off control of the resonance frequency shift unit in accordance with the amount of change in resonance capacitance of the resonance capacitor by the capacitance variation control unit.

A wireless power transfer system includes a power transmitter including a power transmission resonator composed of a power transmission coil and a resonant capacitance; and a power receiver including a power receiving resonator composed of a power receiving coil and a resonant capacitance. The system further includes a power transmission auxiliary device including an auxiliary resonator composed of an auxiliary coil and a resonant capacitance. The power transmission auxiliary device and the power transmission device oppose each other, forming a power receiving space for placing the power receiving coil between the power transmission coil and the auxiliary coil, and power transfer is performed in the power receiving space while involving a movement of the power receiving coil including at least one of a displacement and a rotation. The power transfer can be performed with stable efficiency in spite of the movement of the power receiver.

An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.

A communication device includes a case, a high frequency coupler that is disposed inwards from the surface of the case so as to be spaced apart from the surface and transmits and receives a signal of an induction electric field, and a surface wave transmission path that is disposed between the radiation surface of the induction electric field of the high frequency coupler and the surface of the case.

Disclosed are a conjugated diolefin (co) polymer rubber formed from either a conjugated diolefin or a conjugated diolefin and an aromatic vinyl compound, wherein the (co) polymer rubber has a primary amino group and an alkoxysilyl group which are bonded to a (co) polymer chain; a process for producing the same; a rubber composition; a composite; and a tire. The (co) polymer rubber has satisfactory processability, and can give an automotive tire tread having a balance among wear resistance, failure characteristics, low hysteresis loss and wet-skid characteristics.

A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

A high-precision, multi-port compatible, relative correction method and apparatus for correcting measurement errors covering an increase in the number of ports of a non-coaxial electronic component, in which a relative correction adapter 31 is provided that is formed of a two-port network connected to each port of a production test fixture 5B adjacent to a measurement apparatus. The relative correction adapter has a characteristic that modifies the electrical characteristics generated by the production test fixture 5B having an electronic component under test mounted thereon into electrical characteristics generated by a standard test fixture 5A having the electronic component under test mounted thereon. An error factor of the relative correction adapter 31 is identified from a standard test fixture measurement value and a production test fixture measurement value of a correction data acquisition specimen 11B. A production test fixture measurement value of the electronic component under test 11A is corrected with the error factor of the relative correction adapter 31 to thereby obtain the standard test fixture measurement value of the electronic component under test 11A which is assumed to be obtained when the electronic component under test 11A.

This invention provides a display apparatus in which it is possible to have a light emitting element emitted light with constant luminance without coming under the influence of deterioration over time, and it is possible to realize accurate gray scale express, and yet, it is possible to speed up writing of a signal current to each pixel, and influence of noise of a leak current etc. is suppressed, and a driving method thereof. A plurality of pairs of switch parts and current source circuits are disposed in each pixel. Switching of each of a plurality of the switch parts is controlled by a digital video signal. When the switch part is turned on, by a current supplied from the current source circuit making a pair with the switch part, the light emitting element emits light. A current which is supplied from one current source circuit to the light emitting element is constant. A value of a current flowing through the light emitting element is comparable to a value of added currents which are supplied to the light emitting element from respective all current source circuits making pairs with the switch parts which are in the conductive states.

Upon formation of a layer such as an emissive layer of an organic EL element by attaching an emissive material onto a substrate (10), an evaporation mask (100) including an opening (110) corresponding to the layer formed to have a plurality of individual patterns and having an area, for example, smaller than the substrate is disposed between the substrate (10) and a material source (200). A relative position between the mask (100) and the material source (200), and the substrate (10) is slid by a predetermined pitch corresponding to the size of a pixel of the substrate (10), thereby forming a material layer (such as the emissive layer 64) in a predetermined region of the substrate. As a result, the material layer can be formed on the substrate through, for example, evaporation with a high accuracy.

In a display element such as an organic EL element, deterioration progresses due to light emission, and emission luminance is lowered even if the same voltage is applied to the display element. Therefore, use over time causes variations in luminance of each pixel, thereby a so-called “image burn-in” phenomenon occurs. Given this factor, the invention provides a display device which can reduce the difference in deterioration of a display element in each pixel and suppress variations in light emission of a display element in a pixel. It is prevented that only a specific pixel has a long accumulated lighting time. For that purpose, a gray scale of a display pattern is changed to prevent the difference in deterioration of display element in pixels from increasing. Alternatively, a specific display pattern is prevented from being fixedly displayed in a specific region. Further alternatively, a pixel lagging behind in deterioration is deteriorated so that the accumulated lighting time of pixels is equal to each other.

A pixel having a transistor which controls a current value supplied to a load, a first storage capacitor, a second storage capacitor, and first to fourth switches is included. After the threshold voltage of the transistor is held in the second storage capacitor, a potential in accordance with a video signal is input to the pixel. Voltage obtained by adding a potential in which the potential in accordance with the video signal and the first storage capacitor are capacitively divided to the threshold voltage is held in the second storage capacitor in this manner, so that variation of a current value caused by variations in the threshold voltage of the transistor is suppressed. Thus, desired current can be supplied to the load such as a light-emitting element. In addition, a display device with little deviation from luminance specified by the video signal can be provided.

A radio frequency IC device includes a radio frequency IC chip, a feeder circuit substrate, and a radiating plate. The feeder circuit substrate includes a feeder circuit that electrically connects to the radio IC chip and that includes a resonance circuit and / or a matching circuit including inductance elements. The feeder circuit substrate is bonded to the radiating plate, which radiates a transmission signal supplied from the feeder circuit and supplies a received signal to the feeder circuit. The inductance elements are arranged in spiral patterns wound in opposite directions and couple to each other in opposite phases. The radio frequency IC device is able to obtain a radio frequency IC device that is not susceptible to being affected by a usage environment, minimizes variations in radiation characteristics, and can be used in a wide frequency band.

In a standard cell, dummy transistors have p-type and n-type dummy gate electrodes. The dummy transistors are in an OFF state all the time. The gate length of each of the dummy gate electrodes is extended over an end portion of a diffusion region toward the inside of the standard cell. Thus, the total surface area and the total perimeter of respective gate electrodes of all transistors provided in the standard cell are increased. As a result, for example, even though shapes of gate electrodes of transistors vary between the standard cell and each of other standard cells, transistor characteristics are substantially equal among the standard cells. Therefore, variations in delays of signals generated between the standard cells can be suppressed.

A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.

It is made possible to restrict the variation of the oscillation frequency of a spin torque oscillator placed in the vicinity of the recording magnetic pole. A magnetic head includes: a recording magnetic pole to generate a recording magnetic field; a spin torque oscillator formed in the vicinity of the recording magnetic pole; and a magnetic field applying unit configured to apply a magnetic field to the spin torque oscillator. The magnetic field applied to the spin torque oscillator by the magnetic field applying unit is perpendicular to a recording magnetic field generated from the recording magnetic pole.

A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities, whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.

The invention presents a touch panel disposed at the display screen side of a liquid crystal display device or the like, and excellent in surface smoothness and environmental resistance. In marginal outer circumferential part 400B for adhering and fixing first transparent substrate 21 and second transparent substrate 31 face to face, insulating layer 27 for correction of step difference is disposed in order to make uniform the film thickness. Adhesive layer 29 is disposed on insulating layer 27, and first transparent substrate 21 and second transparent substrate 31 are adhered to each other. As a result, the adhesion fixing state if stabilized, and the adhesion strength is enhanced, and a touch panel suitable for car-mount unit excellent in surface smoothness and environmental resistance can be presented.

An automated microscope and computer system captures a set of images for a capture area in a plurality of focal planes. The images can then be integrated into composite images for browsing to simulate viewing an item, such as a biological sample, under a microscope. A corrective filter can be constructed from the images to avoid an effect called “tiling.” Before capture, variable focal plane error can be avoided by collecting z locations for a set of points in the capture area. During image browsing, entire composite images can be loaded into memory in compressed form. Compressed image portions can be pre-decompressed to avoid delay as a browsing user navigates throughout the composite images. Pre-decompression can be done by a thread separate from the thread performing navigation operations.

A sensor device includes a sensor chip having a movable portion on one surface, a circuit chip laminated with the sensor chip to be opposite to the movable portion of the sensor chip, and a bump located between the sensor chip and the circuit chip. In the sensor device, the sensor chip and the circuit chip are electrically connected through the bump, and the movable portion of the sensor chip is separated from the circuit chip by a space using the bump. Accordingly, it can effectively restrict parasitic capacity of an electric connecting portion between both the chips from being changed by an impact. For example, the sensor device can be used as an angular velocity sensor device having a vibrator as the movable portion.

A radar system includes a plurality of antennas and a controller. The plurality of antennas is configured to detect a reflected radar signal reflected by an object in a field-of-view of the system. Each antenna of the plurality of antennas is configured to output a detected signal indicative of the reflected radar signal detected by the antenna. The controller is configured to receive detected signals from the plurality of antennas, and determine if a target is present in the field-of-view based on the detected signals. The controller is also configured to determine if the target includes more than one object based on an analysis of phases of the detected signals.