88 results about "Electron affinity" patented technology

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and / or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset / failure bit is reduced.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

There is provided a photoelectric conversion element, an imaging device, and an electronic apparatus that make it possible to improve a response speed. A first photoelectric conversion element (10) according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode (16) disposed to be opposed to the first electrode (11); an organic layer (13) provided between the first electrode (11) and the second electrode (16) and including a hole-transporting material; a work function adjustment layer (15) provided between the second electrode (16) and the organic layer (13) and having an electron affinity or a work function larger than a work function of the first electrode (11); and an electron block layer (14) provided between the organic layer (13) and the work function adjustment layer (15) and having an anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more.

The epitaxial structure of the semiconductor power device and the radio frequency device comprises a substrate, a channel layer and a barrier layer which are sequentially arranged from bottom to top, and a composite electron gas interface layer is arranged between the channel layer and the barrier layer. The composite electron gas interface layer has an electron affinity distribution characteristic, a hole mobility distribution characteristic, an electron mobility distribution characteristic, an electron effective mass distribution characteristic and a heavy hole effective mass distribution characteristic. By modulating the electron affinity steep degree, the hole mobility steep degree, the electron mobility steep degree, the electron effective mass steep degree and the heavy hole effective mass steep degree of the composite electron gas interface layer, the composite hole gas concentration of the channel layer and the barrier layer is improved; the gate leakage current, the off-state drain current and the switching current ratio are increased, and the high electron mobility transistor HEMT with high output current density and high breakdown voltage is realized.

The present invention discloses a method and system for obtaining the charge injection barrier at a metal / polymer interface. The method comprises the following steps: obtaining a metal / polymer interface model based on first principles, according to the metal / polymer interface for which the charge injection barrier is to be obtained; obtaining the metal surface work function, vacuum energy level difference, polymer electron affinity, and ionization energy based on first principles, the polymer molecular chain structure model, and the metal / polymer interface model; and calculating the charge injection barrier at the metal / polymer interface based on the obtained physical quantities and the definition of the metal / insulating material charge injection barrier in energy band theory. This method solves technical problems in the prior art, such as the significant influence of external interference on the results; the difficulty in standardizing the experimental process for different polymer materials and metal electrode materials; and the lack of a complete theoretical basis for the method.

The present invention discloses an electron transport material, a phenanthroline derivative, and a synthesis and application method thereof. The phenanthroline compound is further fused to significantly increase the Tg of the material. The Tg values ​​of compounds 1 to 9 are distributed between 148° C. and 203° C., which are all very high Tg values ​​and fully meet the conventional use temperature requirements. The present invention also increases the large conjugated π bond inside the molecule, effectively improving the electron affinity of the molecule itself. The present invention performs N atom hybridization replacement on the C atom on the phenanthroline, thereby enhancing the electron accepting site of the molecule itself, and making the material have excellent electron binding ability.

Provided is an HBT capable of suppressing a decrease in linearity of input-output characteristics of the HBT. A collector layer, a base layer, and an emitter layer are stacked on a substrate. The collector layer includes a graded semiconductor layer whose electron affinity increases from a side close to the base layer toward a side away from the base layer. The electron affinity on an interface of the base layer on the side close to the collector layer is equal to the electron affinity on an interface of the graded semiconductor layer on the side close to the base layer.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

Provided is a highly reliable semiconductor device. The present invention has a semiconductor layer, an oxide layer, an insulating layer, and a conductive layer. The oxide layer is located between the semiconductor layer and the insulating layer, the conductive layer has a region overlapping the semiconductor layer with the oxide layer and the insulating layer interposed therebetween, the semiconductor layer comprises indium and oxygen, the insulating layer comprises a metal element and oxygen, the oxide layer comprises indium, the metal element, and oxygen, the metal element is an element capable of becoming a trivalent cation, the oxide layer has a region having a film thickness of 0.1-1 nm, and the electron affinity of the oxide layer is less than the electron affinity of the semiconductor layer and greater than the electron affinity of the insulating layer.

This application belongs to the field of display technology and relates to a composite thin film, comprising a first thin film and a second thin film stacked together; the first thin film includes a MOF material and an electron transport material, wherein the conductivity of the MOF material is greater than or equal to 5 × 10⁻³ S / m; the electron affinity of the second thin film is greater than or equal to 4.7 eV. This application also relates to a method for preparing the composite thin film, a light-emitting device, and a display device. The technical solution provided by this application can reduce the electron injection barrier of the thin film and improve the electron injection efficiency.

Provided is a floating gate based 3-terminal analog synapse device including a silicon channel layer; a gate oxide deposited on the silicon channel layer; a charge trap layer deposited on the gate oxide, wherein charges are injected into the charge trap layer; a barrier layer deposited on the charge trap layer, and having lower electron affinity than electron affinity of a material of the charge trap layer; and a gate metal layer deposited on an upper surface of the barrier layer, wherein a gate voltage is applied to the gate metal layer.

The application provides a gallium nitride-based semiconductor blue laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, wherein a topological interface state layer is arranged between the upper waveguide layer and the upper limiting layer, and the topological interface state layer has breakdown field strength distribution characteristics and electron affinity energy distribution characteristics. Through the specific breakdown field strength distribution and electron affinity energy distribution of the topological interface state layer, a new body boundary energy band is formed, a strong spin center is formed at the interface, the coupling between adjacent interface states and the spin-splitting asymmetry of the electron band structure are enhanced, the spin-orbit torque effect is enhanced, the piezoelectric polarization and the thermal stress mismatch of the laser element are relieved, the valence band step is reduced, the uniformity of the valence band step is improved, the uniformity of the carrier injection into the active layer is improved, and the gain uniformity is improved.

The present disclosure relates to a gate tube and a manufacturing method thereof, and relates to the field of integrated circuit technology. The gate tube includes a first electrode layer, a gate layer, a buffer layer, a barrier layer, and a second electrode layer. The gate layer, the buffer layer, and the barrier layer are stacked between the first electrode layer and the second electrode layer. The electron affinity of the barrier layer is less than that of the gate layer, and the electron affinity of the buffer layer is between the gate layer and the barrier layer. The barrier layer localizes electrons to prevent electrons from leaking outward, thereby reducing the leakage current of the gate tube, and a buffer layer is provided between the gate layer and the barrier layer. The buffer layer is used to buffer the difference in electron affinity between the gate layer and the barrier layer, thereby avoiding fluctuations in the performance of the gate tube caused by excessive difference in electron affinity between the gate layer and the barrier layer. The buffer layer can also reduce the barrier layer voltage drop to prevent the barrier layer from being broken down by the high voltage drop.

This light-emitting element comprises a charge transport layer between an anode and a light-emitting layer, or between the light-emitting layer and a cathode. The charge transport layer includes a first layer, a second layer, and a third layer in this order from the anode side. The second layer has a lower ionization potential and a lower electron affinity than the first layer and the third layer. Alternatively, the second layer has a higher ionization potential and a higher electron affinity than the first layer and the third layer.

An antiferroelectric memory device includes a plurality of antiferroelectric memory elements. Each of the antiferroelectric memory elements comprises a semiconductor layer containing a metal oxide, a gate electrode facing the semiconductor layer; and a gate insulating layer comprised from an antiferroelectric material arranged between the semiconductor layer and the gate electrode. An electron affinity of a first material forming the gate electrode is smaller than an electron affinity of a second material comprising the semiconductor layer and the second material is an n-type semiconductor, or an electron affinity of the first material forming the gate electrode is greater than an electron affinity of the second material comprising the semiconductor layer and the second material is a p-type semiconductor.

Memory cell (102), comprising: a lower electrode (106); an upper electrode (108) that lies above the lower electrode (106); and a dielectric stack (104) comprising several dielectric layers (104h, 104l1, 104l2) stacked between the lower and upper electrodes (106, 108); wherein the multiple dielectric layers (104h, 104l1 104l1, 104l2) have a first dielectric layer (104h) and the first dielectric layer (104h) those of the dielectric layers (104h, 104l) n 104l1, 104l2) is the one that is closest to the lower electrode (106) and has the highest electron affinity (X1) from the dielectric layers (104h, 104l1 104l1, 104l2), wherein the multiple dielectric layers (104h, 104l, 104l1, 104l2) have a second dielectric layer (104l1) and a third dielectric layer (10412), and wherein the second dielectric layer (104l1) is located between the first and the third dielectric layer (104h, 104l2), wherein the second dielectric layer (104l1) has an electron affinity (X2) between that of the first dielectric layer (104h) and that of the third dielectric layer (104l2), or wherein the third dielectric layer (10412) has an electron affinity (X3) between that of the first dielectric layer (104h) and that of the second dielectric layer (104l1).

To suppress leakage current.SOLUTION: A piezoelectric element 36 includes: a top electrode TE; a bottom electrode BE; a piezoelectric layer PL provided between the top electrode TE and the bottom electrode BE; and an insulating layer IL1 provided between the top electrode TE and the piezoelectric layer PL and having insulation properties. When EAp represents the electron affinity of a piezoelectric material included in the piezoelectric layer PL, IEp represents the ionization energy of the piezoelectric material, WF represents the work function of an electrode material included in the top electrode TE, and IEi represents the ionization energy of an insulating material included in the insulating layer IL1, both of WF>(EAp+IEp) / 2 and IEi>IEp are satisfied.SELECTED DRAWING: Figure 5

The present invention discloses a method for measuring the first electron affinity of semiconductor thin film materials, which belongs to the field of surface and interface analysis. The measuring method includes: a calibration step, a testing step and a calculation step. The method carries a vacuum ultraviolet photoelectron spectroscopy system and a reflected photoelectron spectroscopy system in a main ultrahigh vacuum chamber. By combining the ultraviolet photoelectron spectroscopy technology with the reflected photoelectron spectroscopy technology, not only the secondary electron cutoff edge energy position and work function relative to the Fermi level can be obtained, but also the conduction band bottom position or the lowest unoccupied molecular orbital position can be obtained, and the first electron affinity value of the semiconductor thin film material can be further obtained by calculation. The measuring method is convenient, the operation process is simple, the accuracy is high, and the universality is strong.

The invention belongs to the technical field of semiconductor memories, and particularly relates to a charge over-injection memory based on a two-dimensional Dirac material. A channel material of the memory adopts a two-dimensional Dirac material with a conical energy band structure, and the electron affinity of the channel material is greater than that of a tunneling layer material; the electron affinity of the material of the charge storage layer is greater than the electron affinity of the tunneling layer and the barrier layer, and the forbidden bandwidth of the material of the charge storage layer is smaller than the forbidden bandwidth of the tunneling layer and the barrier layer; the tunneling layer, the charge storage layer and the barrier layer can form a potential well, so that charges can be kept in the charge storage layer for a long time after being injected into the charge storage layer from a channel; under the condition of proper external voltage, carriers are accelerated in the whole course in a channel and continuously obtain energy from an electric field so as to realize super injection of charges; and while the programming speed of hundreds of picoseconds is maintained, the data retention capability is improved to more than ten years. The power consumption of the memory caused by high frequency can be effectively reduced.

The photoelectric conversion element of one embodiment of the present application comprises: a first electrode; a second electrode; a photoelectric conversion layer, which is arranged between the first electrode and the second electrode and contains a donor organic semiconductor material and an acceptor organic semiconductor material; and a hole blocking layer, which is arranged between the first electrode and the second electrode and the photoelectric conversion layer. The ionization potential of the photoelectric conversion layer is 5.3 eV or less. The electron affinity of the hole blocking layer is less than the electron affinity of the acceptor organic semiconductor material contained in the photoelectric conversion layer. It has spectral sensitivity in the near-infrared light region with a wavelength of 650nm to 3000nm.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

In accordance with some embodiments of the present disclosure a tunneling-based selector is provided. The selector includes a multilayer barrier structure fabricated between a first electrode and a second electrode. The multilayer barrier structure includes a first layer of a first van der Waals (vdW) material; a second layer of a second vdW material; and a third layer of a third vdW material. The first layer of the first vdW material is fabricated between the second layer of the second vdW material and the third layer of the third vdW material. The electron affinity of the first layer of the first vdW material is lower than the second electron affinity of the second layer of the second vdW material and the electron affinity of the third layer of the vdW material.

In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.

A light-emitting element (2) comprises a first light-emitting layer (23) and an electron accumulation layer (24). The first light-emitting layer includes at least one quantum dot (41). The electron accumulation layer is adjacent to the first light-emitting layer and includes an inorganic compound having a higher electron affinity than that of the material of the quantum dot.

There is provided a Group III nitride stack in which the concentration of an impurity in the buffer / channel layer of an HEMT is suppressed to a predetermined range. The Group III nitride stack includes a first layer comprising gallium nitride, and a second layer on the first layer, the second layer comprising a Group III nitride having a lower electron affinity than gallium nitride. The first layer includes a lower layer and an upper layer on the lower layer. The carbon concentration in the upper layer is lower than a carbon concentration in the lower layer, the hydrogen concentration in the upper layer is lower than a hydrogen concentration in the lower layer, the carbon concentration in the upper layer is 5×1016 cm−3 or less, and the hydrogen concentration in the upper layer is 1×1017 cm−3 or less.

An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

The present invention addresses the problem of providing an organic thin film which uses an organic material having high electron affinity as a hole injection material and which can improve the driving stability of an organic device, the organic thin film as a solution being a hole-injectable organic thin film containing two or more organic acceptor materials having different electron affinity, the present invention relates to a film comprising a first layer comprising an organic acceptor material having a relatively small electron affinity, and a second layer laminated on the first layer and comprising an organic acceptor material having a relatively large electron affinity, the electron affinity of the organic acceptor material having a relatively small electron affinity is smaller than the electron affinity of the organic acceptor material having a relatively large electron affinity, and the first layer is disposed on the anode side for use.

The invention relates to a preparation method of a nanofiber oil-gas separation membrane material with a mechanical regeneration function, which comprises the following steps: 1) preparing a polymer solution: dissolving two or more than two polymers in an organic solvent to obtain the polymer solution; the polymer comprises a positive electron affinity material and a negative electron affinity material; and 2) preparing the nanofiber membrane: performing electrostatic spinning, melt-blowing, solution airflow assistance, template synthesis, self-assembly or microphase separation on the polymer solution to obtain the nanofiber membrane. The polymer mixed solution is prepared into the single-layer nanofiber membrane with the endogenous triboelectric effect through the technologies such as electrostatic spinning, and the charge of nanofibers is remarkably increased. The nanofiber membrane does not need complex structural design, high-efficiency removal efficiency and reusability of the oil mist are achieved, and the device is suitable for a large-scale industrial ventilation system or environment-friendly equipment.

The invention discloses a GaN-based semiconductor laser element which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, spin-orbit coupling layers are arranged in the lower limiting layer and the lower waveguide layer, and the spin-orbit coupling layers are designed to be used for regulating and controlling phase-locked laser response and near-field beam guidance. Mode competition is suppressed, the laser suppression ratio is improved, light field dissipation is reduced, coherence and mode gain of laser are improved, the line width of the laser is reduced, and a light beam quality factor is improved; by designing conduction band effective state density distribution, electron affinity distribution and electron effective mass distribution of the spin-orbit coupling layer, a quantum Hall system with relatively strong net spin density and super-strong second-order nonlinear Hall effect is formed, nonlinear optical polarizability is enhanced, population distribution inversion of the active layer is accelerated, and the quantum Hall effect is improved. The active layer state density is enhanced to improve spontaneous radiation and stimulated radiation, and the lasing power and slope efficiency of the laser element are improved.