61 results about "Electron affinity" patented technology

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and / or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset / failure bit is reduced.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

There is provided a photoelectric conversion element, an imaging device, and an electronic apparatus that make it possible to improve a response speed. A first photoelectric conversion element (10) according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode (16) disposed to be opposed to the first electrode (11); an organic layer (13) provided between the first electrode (11) and the second electrode (16) and including a hole-transporting material; a work function adjustment layer (15) provided between the second electrode (16) and the organic layer (13) and having an electron affinity or a work function larger than a work function of the first electrode (11); and an electron block layer (14) provided between the organic layer (13) and the work function adjustment layer (15) and having an anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more.

The present invention discloses a method and system for obtaining the charge injection barrier at a metal / polymer interface. The method comprises the following steps: obtaining a metal / polymer interface model based on first principles, according to the metal / polymer interface for which the charge injection barrier is to be obtained; obtaining the metal surface work function, vacuum energy level difference, polymer electron affinity, and ionization energy based on first principles, the polymer molecular chain structure model, and the metal / polymer interface model; and calculating the charge injection barrier at the metal / polymer interface based on the obtained physical quantities and the definition of the metal / insulating material charge injection barrier in energy band theory. This method solves technical problems in the prior art, such as the significant influence of external interference on the results; the difficulty in standardizing the experimental process for different polymer materials and metal electrode materials; and the lack of a complete theoretical basis for the method.

Provided is an HBT capable of suppressing a decrease in linearity of input-output characteristics of the HBT. A collector layer, a base layer, and an emitter layer are stacked on a substrate. The collector layer includes a graded semiconductor layer whose electron affinity increases from a side close to the base layer toward a side away from the base layer. The electron affinity on an interface of the base layer on the side close to the collector layer is equal to the electron affinity on an interface of the graded semiconductor layer on the side close to the base layer.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

Provided is a highly reliable semiconductor device. The present invention has a semiconductor layer, an oxide layer, an insulating layer, and a conductive layer. The oxide layer is located between the semiconductor layer and the insulating layer, the conductive layer has a region overlapping the semiconductor layer with the oxide layer and the insulating layer interposed therebetween, the semiconductor layer comprises indium and oxygen, the insulating layer comprises a metal element and oxygen, the oxide layer comprises indium, the metal element, and oxygen, the metal element is an element capable of becoming a trivalent cation, the oxide layer has a region having a film thickness of 0.1-1 nm, and the electron affinity of the oxide layer is less than the electron affinity of the semiconductor layer and greater than the electron affinity of the insulating layer.

This application belongs to the field of display technology and relates to a composite thin film, comprising a first thin film and a second thin film stacked together; the first thin film includes a MOF material and an electron transport material, wherein the conductivity of the MOF material is greater than or equal to 5 × 10⁻³ S / m; the electron affinity of the second thin film is greater than or equal to 4.7 eV. This application also relates to a method for preparing the composite thin film, a light-emitting device, and a display device. The technical solution provided by this application can reduce the electron injection barrier of the thin film and improve the electron injection efficiency.

The application provides a gallium nitride-based semiconductor blue laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, wherein a topological interface state layer is arranged between the upper waveguide layer and the upper limiting layer, and the topological interface state layer has breakdown field strength distribution characteristics and electron affinity energy distribution characteristics. Through the specific breakdown field strength distribution and electron affinity energy distribution of the topological interface state layer, a new body boundary energy band is formed, a strong spin center is formed at the interface, the coupling between adjacent interface states and the spin-splitting asymmetry of the electron band structure are enhanced, the spin-orbit torque effect is enhanced, the piezoelectric polarization and the thermal stress mismatch of the laser element are relieved, the valence band step is reduced, the uniformity of the valence band step is improved, the uniformity of the carrier injection into the active layer is improved, and the gain uniformity is improved.

The present disclosure relates to a gate tube and a manufacturing method thereof, and relates to the field of integrated circuit technology. The gate tube includes a first electrode layer, a gate layer, a buffer layer, a barrier layer, and a second electrode layer. The gate layer, the buffer layer, and the barrier layer are stacked between the first electrode layer and the second electrode layer. The electron affinity of the barrier layer is less than that of the gate layer, and the electron affinity of the buffer layer is between the gate layer and the barrier layer. The barrier layer localizes electrons to prevent electrons from leaking outward, thereby reducing the leakage current of the gate tube, and a buffer layer is provided between the gate layer and the barrier layer. The buffer layer is used to buffer the difference in electron affinity between the gate layer and the barrier layer, thereby avoiding fluctuations in the performance of the gate tube caused by excessive difference in electron affinity between the gate layer and the barrier layer. The buffer layer can also reduce the barrier layer voltage drop to prevent the barrier layer from being broken down by the high voltage drop.

This light-emitting element comprises a charge transport layer between an anode and a light-emitting layer, or between the light-emitting layer and a cathode. The charge transport layer includes a first layer, a second layer, and a third layer in this order from the anode side. The second layer has a lower ionization potential and a lower electron affinity than the first layer and the third layer. Alternatively, the second layer has a higher ionization potential and a higher electron affinity than the first layer and the third layer.

An antiferroelectric memory device includes a plurality of antiferroelectric memory elements. Each of the antiferroelectric memory elements comprises a semiconductor layer containing a metal oxide, a gate electrode facing the semiconductor layer; and a gate insulating layer comprised from an antiferroelectric material arranged between the semiconductor layer and the gate electrode. An electron affinity of a first material forming the gate electrode is smaller than an electron affinity of a second material comprising the semiconductor layer and the second material is an n-type semiconductor, or an electron affinity of the first material forming the gate electrode is greater than an electron affinity of the second material comprising the semiconductor layer and the second material is a p-type semiconductor.

Memory cell (102), comprising: a lower electrode (106); an upper electrode (108) that lies above the lower electrode (106); and a dielectric stack (104) comprising several dielectric layers (104h, 104l1, 104l2) stacked between the lower and upper electrodes (106, 108); wherein the multiple dielectric layers (104h, 104l1 104l1, 104l2) have a first dielectric layer (104h) and the first dielectric layer (104h) those of the dielectric layers (104h, 104l) n 104l1, 104l2) is the one that is closest to the lower electrode (106) and has the highest electron affinity (X1) from the dielectric layers (104h, 104l1 104l1, 104l2), wherein the multiple dielectric layers (104h, 104l, 104l1, 104l2) have a second dielectric layer (104l1) and a third dielectric layer (10412), and wherein the second dielectric layer (104l1) is located between the first and the third dielectric layer (104h, 104l2), wherein the second dielectric layer (104l1) has an electron affinity (X2) between that of the first dielectric layer (104h) and that of the third dielectric layer (104l2), or wherein the third dielectric layer (10412) has an electron affinity (X3) between that of the first dielectric layer (104h) and that of the second dielectric layer (104l1).

The invention belongs to the technical field of semiconductor memories, and particularly relates to a charge over-injection memory based on a two-dimensional Dirac material. A channel material of the memory adopts a two-dimensional Dirac material with a conical energy band structure, and the electron affinity of the channel material is greater than that of a tunneling layer material; the electron affinity of the material of the charge storage layer is greater than the electron affinity of the tunneling layer and the barrier layer, and the forbidden bandwidth of the material of the charge storage layer is smaller than the forbidden bandwidth of the tunneling layer and the barrier layer; the tunneling layer, the charge storage layer and the barrier layer can form a potential well, so that charges can be kept in the charge storage layer for a long time after being injected into the charge storage layer from a channel; under the condition of proper external voltage, carriers are accelerated in the whole course in a channel and continuously obtain energy from an electric field so as to realize super injection of charges; and while the programming speed of hundreds of picoseconds is maintained, the data retention capability is improved to more than ten years. The power consumption of the memory caused by high frequency can be effectively reduced.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

In accordance with some embodiments of the present disclosure a tunneling-based selector is provided. The selector includes a multilayer barrier structure fabricated between a first electrode and a second electrode. The multilayer barrier structure includes a first layer of a first van der Waals (vdW) material; a second layer of a second vdW material; and a third layer of a third vdW material. The first layer of the first vdW material is fabricated between the second layer of the second vdW material and the third layer of the third vdW material. The electron affinity of the first layer of the first vdW material is lower than the second electron affinity of the second layer of the second vdW material and the electron affinity of the third layer of the vdW material.

A light-emitting element (2) comprises a first light-emitting layer (23) and an electron accumulation layer (24). The first light-emitting layer includes at least one quantum dot (41). The electron accumulation layer is adjacent to the first light-emitting layer and includes an inorganic compound having a higher electron affinity than that of the material of the quantum dot.

There is provided a Group III nitride stack in which the concentration of an impurity in the buffer / channel layer of an HEMT is suppressed to a predetermined range. The Group III nitride stack includes a first layer comprising gallium nitride, and a second layer on the first layer, the second layer comprising a Group III nitride having a lower electron affinity than gallium nitride. The first layer includes a lower layer and an upper layer on the lower layer. The carbon concentration in the upper layer is lower than a carbon concentration in the lower layer, the hydrogen concentration in the upper layer is lower than a hydrogen concentration in the lower layer, the carbon concentration in the upper layer is 5×1016 cm−3 or less, and the hydrogen concentration in the upper layer is 1×1017 cm−3 or less.

An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

In accordance with some embodiments of the present disclosure a tunneling-based selector is provided. The selector includes a multilayer barrier structure fabricated between a first electrode and a second electrode. The multilayer barrier structure includes a first layer of a first van der Waals (vdW) material; a second layer of a second vdW material; and a third layer of a third vdW material. The first layer of the first vdW material is fabricated between the second layer of the second vdW material and the third layer of the third vdW material. The electron affinity of the first layer of the first vdW material is lower than the second electron affinity of the second layer of the second vdW material and the electron affinity of the third layer of the vdW material.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):E2>E1  (1)E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion elementE2 [eV]: band gap of the first organic compoundE3<E4−0.2  (2)E4−0.4<E5<E4  (3)E3 [eV]: electron affinity of material used for the first interfacial layerE4 [eV]: electron affinity of the quantum dotsE5 [eV]: electron affinity of the first organic compound.

The invention discloses a preparation method of an NDI-NiFe-MOF nano array material, which comprises the following steps: adding ethanol, water and N, N-dimethyl diamide into nickel nitrate, ferric chloride and N, N-bis (3-carboxyl-4-hydroxyphenyl)-1, 4, 5, 8-naphthalene tetradicarboximide; performing ultrasonic oscillation, and adding foamed nickel for reaction; and filtering, washing and drying. A unique nanoflower structure is formed by the material, so that the contact area with an electrolyte is increased, an ultra-large aperture, more metal active sites and a high specific surface area are provided, and the capacity of the electrode material can be enhanced; and in a long-cycle test, excellent stability is still kept, which is benefited from the unique rigid macrocyclic core structure of H4NDISA. The NDI unit has excellent electron affinity and oxidation-reduction performance, stable free radicals are generated in the reversible oxidation-reduction process, electron delocalization and efficient transmission are achieved through pi-pi accumulation, and high electrochemical performance is achieved.

In a first step S101, a first region in which a polarity inversion layer is formed, and a second region in which the polarity inversion layer is not formed are provided on a substrate. Next, in a second step S102, a first nitride semiconductor is epitaxially grown on the substrate having the first region and the second region along the c-axis direction such that a first semiconductor layer is formed. Next, in a third step S103, a second nitride semiconductor is epitaxially grown on the first semiconductor layer along the c-axis direction such that a second semiconductor layer is formed on the first semiconductor layer. The second nitride semiconductor has different polarization, electron affinity, and band-gap energy from the first nitride semiconductor. The second semiconductor layer forms a heterojunction with the first semiconductor layer. The interface therebetween has a polarization charge, which is positive or negative depending on polarity.

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.

A light-emitting layer (23) provided to a light-emitting element (2) includes a light-emitting material (30) and a matrix material (40). In a direction along the lamination direction (LD) of the light-emitting element, the ionization potential of the matrix material is smaller or the electron affinity of the matrix material is larger toward the center of the light-emitting layer in comparison to both an end (23A) of the light-emitting layer toward an anode (21) and an end (23B) of the light-emitting layer toward a cathode (25).

The invention relates to a nonlinear optical chromophore having an organic indolizine electron-donating group, having the following general formula (I): D represents an indolizine electron-donating group. N represents an n-bridge between A and D, wherein the n-bridge comprises a carbon chain covalently bound to and separating A and D. A represents an organic electron accepting group having an electron affinity greater than the electron affinity of D. The organic indolizine electron-donating group D has one of the following formulae. Various embodiments of the present invention include a non-linear optochromic group having an indolizine donor group, which has an indolizine donor attached to a pi-bridge group. In various preferred embodiments of the invention, the indolizine donor groups may be substituted or unsubstituted, including hydrogen and alkyl substituents, aryl substituents, and combinations thereof. In certain embodiments of the invention, the substituent moiety in the indolizine donor group may be important for separation. The separation may reduce chromophore-chromophore interactions. Separation may reduce charge transfer between molecules. The separation may increase the maximum applied voltage, which may contribute to better polarization and higher r33.

The invention belongs to the technical field of ultra-wide bandgap semiconductors, and particularly relates to a power diode device and a preparation method thereof, MXene is adopted as a Schottky anode material, and the series resistance is remarkably reduced by using the ultrahigh conductivity of the MXene, so that the performance of the device in high-frequency and large-current application is improved. Meanwhile, by regulating and controlling the surface terminal and the element composition of the MXene, the flexible adjustment of the work function can be realized, so that the electron affinity of the MXene can be well matched with that of beta-Ga2O3, a higher Schottky barrier and an excellent rectification characteristic can be further obtained, and the reverse leakage current can be inhibited. In addition, as a two-dimensional material, MXene can form a uniform and flat Van der Waals contact interface, so that the damage of a high-energy process is avoided, the surface integrity of beta-Ga2O3 is maintained, the interface state and Fermi level pinning effect are effectively relieved, the barrier height better conforms to the theoretical design, and the Schottky diode with the performance closer to the ideal state can be realized.

Provided is an organic thin film that uses an organic material with a high electron affinity as a hole injection material and can improve the drive stability of organic devices. An organic thin film that is hole-injectable and contains two or more organic acceptor materials different in electron affinity comprises: a first layer containing an organic acceptor material relatively low in electron affinity; and a second layer stacked on the first layer and containing an organic acceptor material relatively high in electron affinity, wherein the organic acceptor material relatively low in electron affinity is lower in electron affinity than the organic acceptor material relatively high in electron affinity, and the organic thin film is configured to be used with the first layer located on an anode side.

An imaging element according to an embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed opposite to the first electrode; an organic layer disposed between the first electrode and the second electrode and including at least a photoelectric conversion layer; a first semiconductor layer disposed between the second electrode and the organic layer and containing at least one of a carbon-containing compound and an inorganic compound, the electron affinity of the carbon-containing compound being greater than the work function of the first electrode, and the work function of the inorganic compound being greater than the work function of the first electrode; and a second semiconductor layer disposed between the second electrode and the first semiconductor layer, and the absolute value B of the difference between the highest occupied molecular orbital (HOMO) energy level and the Fermi energy level of the second electrode is greater than or equal to the absolute value A of the difference between the first lowest unoccupied molecular orbital (LUMO) energy level calculated from the optical band gap and the Fermi energy level, or has an energy level within a band gap where the density of states is 1 / 10000 or more relative to the HOMO energy level near the Fermi energy level.