30 results about "Electron affinity" patented technology

Provided is an HBT capable of suppressing a decrease in linearity of input-output characteristics of the HBT. A collector layer, a base layer, and an emitter layer are stacked on a substrate. The collector layer includes a graded semiconductor layer whose electron affinity increases from a side close to the base layer toward a side away from the base layer. The electron affinity on an interface of the base layer on the side close to the collector layer is equal to the electron affinity on an interface of the graded semiconductor layer on the side close to the base layer.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

Provided is a highly reliable semiconductor device. The present invention has a semiconductor layer, an oxide layer, an insulating layer, and a conductive layer. The oxide layer is located between the semiconductor layer and the insulating layer, the conductive layer has a region overlapping the semiconductor layer with the oxide layer and the insulating layer interposed therebetween, the semiconductor layer comprises indium and oxygen, the insulating layer comprises a metal element and oxygen, the oxide layer comprises indium, the metal element, and oxygen, the metal element is an element capable of becoming a trivalent cation, the oxide layer has a region having a film thickness of 0.1-1 nm, and the electron affinity of the oxide layer is less than the electron affinity of the semiconductor layer and greater than the electron affinity of the insulating layer.

This application belongs to the field of display technology and relates to a composite thin film, comprising a first thin film and a second thin film stacked together; the first thin film includes a MOF material and an electron transport material, wherein the conductivity of the MOF material is greater than or equal to 5 × 10⁻³ S / m; the electron affinity of the second thin film is greater than or equal to 4.7 eV. This application also relates to a method for preparing the composite thin film, a light-emitting device, and a display device. The technical solution provided by this application can reduce the electron injection barrier of the thin film and improve the electron injection efficiency.

This light-emitting element comprises a charge transport layer between an anode and a light-emitting layer, or between the light-emitting layer and a cathode. The charge transport layer includes a first layer, a second layer, and a third layer in this order from the anode side. The second layer has a lower ionization potential and a lower electron affinity than the first layer and the third layer. Alternatively, the second layer has a higher ionization potential and a higher electron affinity than the first layer and the third layer.

An antiferroelectric memory device includes a plurality of antiferroelectric memory elements. Each of the antiferroelectric memory elements comprises a semiconductor layer containing a metal oxide, a gate electrode facing the semiconductor layer; and a gate insulating layer comprised from an antiferroelectric material arranged between the semiconductor layer and the gate electrode. An electron affinity of a first material forming the gate electrode is smaller than an electron affinity of a second material comprising the semiconductor layer and the second material is an n-type semiconductor, or an electron affinity of the first material forming the gate electrode is greater than an electron affinity of the second material comprising the semiconductor layer and the second material is a p-type semiconductor.

Memory cell (102), comprising: a lower electrode (106); an upper electrode (108) that lies above the lower electrode (106); and a dielectric stack (104) comprising several dielectric layers (104h, 104l1, 104l2) stacked between the lower and upper electrodes (106, 108); wherein the multiple dielectric layers (104h, 104l1 104l1, 104l2) have a first dielectric layer (104h) and the first dielectric layer (104h) those of the dielectric layers (104h, 104l) n 104l1, 104l2) is the one that is closest to the lower electrode (106) and has the highest electron affinity (X1) from the dielectric layers (104h, 104l1 104l1, 104l2), wherein the multiple dielectric layers (104h, 104l, 104l1, 104l2) have a second dielectric layer (104l1) and a third dielectric layer (10412), and wherein the second dielectric layer (104l1) is located between the first and the third dielectric layer (104h, 104l2), wherein the second dielectric layer (104l1) has an electron affinity (X2) between that of the first dielectric layer (104h) and that of the third dielectric layer (104l2), or wherein the third dielectric layer (10412) has an electron affinity (X3) between that of the first dielectric layer (104h) and that of the second dielectric layer (104l1).

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

In accordance with some embodiments of the present disclosure a tunneling-based selector is provided. The selector includes a multilayer barrier structure fabricated between a first electrode and a second electrode. The multilayer barrier structure includes a first layer of a first van der Waals (vdW) material; a second layer of a second vdW material; and a third layer of a third vdW material. The first layer of the first vdW material is fabricated between the second layer of the second vdW material and the third layer of the third vdW material. The electron affinity of the first layer of the first vdW material is lower than the second electron affinity of the second layer of the second vdW material and the electron affinity of the third layer of the vdW material.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):E2>E1  (1)E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion elementE2 [eV]: band gap of the first organic compoundE3<E4−0.2  (2)E4−0.4<E5<E4  (3)E3 [eV]: electron affinity of material used for the first interfacial layerE4 [eV]: electron affinity of the quantum dotsE5 [eV]: electron affinity of the first organic compound.

The invention discloses a preparation method of an NDI-NiFe-MOF nano array material, which comprises the following steps: adding ethanol, water and N, N-dimethyl diamide into nickel nitrate, ferric chloride and N, N-bis (3-carboxyl-4-hydroxyphenyl)-1, 4, 5, 8-naphthalene tetradicarboximide; performing ultrasonic oscillation, and adding foamed nickel for reaction; and filtering, washing and drying. A unique nanoflower structure is formed by the material, so that the contact area with an electrolyte is increased, an ultra-large aperture, more metal active sites and a high specific surface area are provided, and the capacity of the electrode material can be enhanced; and in a long-cycle test, excellent stability is still kept, which is benefited from the unique rigid macrocyclic core structure of H4NDISA. The NDI unit has excellent electron affinity and oxidation-reduction performance, stable free radicals are generated in the reversible oxidation-reduction process, electron delocalization and efficient transmission are achieved through pi-pi accumulation, and high electrochemical performance is achieved.

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.

The invention relates to a nonlinear optical chromophore having an organic indolizine electron-donating group, having the following general formula (I): D represents an indolizine electron-donating group. N represents an n-bridge between A and D, wherein the n-bridge comprises a carbon chain covalently bound to and separating A and D. A represents an organic electron accepting group having an electron affinity greater than the electron affinity of D. The organic indolizine electron-donating group D has one of the following formulae. Various embodiments of the present invention include a non-linear optochromic group having an indolizine donor group, which has an indolizine donor attached to a pi-bridge group. In various preferred embodiments of the invention, the indolizine donor groups may be substituted or unsubstituted, including hydrogen and alkyl substituents, aryl substituents, and combinations thereof. In certain embodiments of the invention, the substituent moiety in the indolizine donor group may be important for separation. The separation may reduce chromophore-chromophore interactions. Separation may reduce charge transfer between molecules. The separation may increase the maximum applied voltage, which may contribute to better polarization and higher r33.

Provided is an organic thin film that uses an organic material with a high electron affinity as a hole injection material and can improve the drive stability of organic devices. An organic thin film that is hole-injectable and contains two or more organic acceptor materials different in electron affinity comprises: a first layer containing an organic acceptor material relatively low in electron affinity; and a second layer stacked on the first layer and containing an organic acceptor material relatively high in electron affinity, wherein the organic acceptor material relatively low in electron affinity is lower in electron affinity than the organic acceptor material relatively high in electron affinity, and the organic thin film is configured to be used with the first layer located on an anode side.

An electron beam source for use in X-ray-based sample evaluation, the electron beam source comprising: (a) a housing, (b) a photocathode configured to receive a laser beam, convert the laser beam into a primary electron beam, and output the primary electron beam into an interior formed at least partially by the housing, (c) a diamond unit comprising a diamond layer preceded by a conductive metal layer and followed by a surface with a negative electron affinity, configured to receive the primary electron beam from the interior, amplify the primary electron beam to provide an amplified electron beam, and output the amplified electron beam to an anode opening; and (d) a biasing circuit configured to bias at least one of the photocathode and the diamond-reinforced photocathode.

The present invention provides electroactive compounds, compositions containing electroactive compounds, and methods for pattern formation. [Solution] A composition comprising: an acid-sensitive polymer containing a first repeating unit derived from a monomer containing an acid-degradable group; a photoacid generator compound; a nonpolymer electron acceptor compound having an electron affinity greater than the electron affinity of the photoacid generator compound, which does not generate photoacid and does not contain a plurality of diazonaphthoquinone (DNQ) groups; and a solvent present in the composition in an amount exceeding 50 weight percent based on the total weight of the composition, wherein the composition is a positive-type EUV photoresist or electron beam resist.

To provide a group III nitride laminate in which the concentration of impurities in a buffer / channel layer of a high electron mobility transistor (HEMT) is controlled within a predetermined range.SOLUTION: The group III nitride laminate 100 includes a first layer (buffer / channel layer 30) made of gallium nitride and a second layer (barrier layer 40) formed on the first layer and made of a group III nitride having an electron affinity smaller than that of gallium nitride, the first layer includes a lower layer 31 and an upper layer 32 formed on the lower layer, a carbon concentration in the upper layer is lower than a carbon concentration in the lower layer, and a hydrogen concentration in the upper layer is lower than a hydrogen concentration in the lower layer, the concentration of C in the upper layer is less than or equal to 5 * 1016cm - 3 and the concentration of H in the upper layer is less than or equal to 1 * 1017cm - 3.SELECTED DRAWING: Figure 1

The invention provides a semiconductor structure and a preparation method thereof, a memory device and electronic equipment. The preparation method of the semiconductor structure comprises the following steps: providing a substrate; a source electrode and a drain electrode are manufactured on one side of the substrate, the source electrode and the drain electrode are each provided with a contact part used for making contact with the channel to be manufactured, and the material of at least one of the source electrode contact part and the drain electrode contact part comprises metal oxide; and then a channel, a gate insulating layer and a gate electrode are manufactured in sequence to form the transistor, the channel makes contact with the source electrode contact part and the drain electrode contact part, the electron affinity of the metal oxide is larger than that of a channel material, and the gate electrode is insulated from the channel through the gate insulating layer. The purpose of reducing the contact resistance of the channel and the source and drain electrodes in the transistor is achieved.

The present invention addresses the problem of providing an organic electroluminescent element (1) which can emit light at a low applied voltage while using an excitation complex formed between a donor material and an acceptor material, and which has excellent driving stability. The present invention is provided with a positive electrode (3), a hole transport layer (5), a light-emitting layer (6), and a negative electrode (8) in this order, the hole transport layer (5) containing a first organic compound which is a donor material having a small ionization potential, and the light-emitting layer (6) containing a second organic compound which is an acceptor material having a large electron affinity. An excitation complex is formed between the first organic compound and the second organic compound, and the first organic compound is a thermally activated delayed fluorescent material.

This invention discloses an amino compound with a benzophenanthrene furan group and an organic light-emitting device, selected from compounds of formula 1: Al-A 10 One of the groups is derived from Formula 2, where * represents a bond connected to the basic skeleton in Formula 1. When A2 is derived from a group in Formula 2, L1 is a para-phenylene group, R1 and R2 are derived from single bonds, substituted or unsubstituted C5-C24 aromatic hydrocarbon groups, substituted or unsubstituted C5-C24 heteroaromatic hydrocarbon groups, and Ar1 and Ar2 are derived from C5-C30 aromatic hydrocarbon groups, substituted or unsubstituted C5-C30 heteroaromatic hydrocarbon groups. In this invention, the triarylamine is para-linked to a transition benzene ring with benzo[a]phenanthrenefuran. This benzene ring linkage enhances the overall stability of the target molecule, strengthens the conjugation of the molecule, and increases the stacking property of the molecule in organic light-emitting materials. This invention also sets phenanthrene, naphthyl, or dibenzothiophene groups on the other two substituents of the triarylamine, affecting the electron affinity and electron transport properties of the triarylamine and further extending its lifespan.

The invention relates to a rectifying antenna comprising: an antenna; a diode of the MIIM type having a first metal layer, a first insulating layer made of a first electrical insulator of electron affinity φ1, a second insulating layer made of a second electrical insulator of electron affinity φ2 lower than φ1, and a second metal layer. The second electrical insulator has a dielectric constant εr2 lower than the dielectric constant εr1 of the first electrical insulator, and is a silicon oxide with a thickness between 0.5 and 2 nm.

The present invention reduces the on-resistance of a vertical device of a semiconductor apparatus that comprises an SiC substrate and an AlGaN layer and includes a vertical device. A contact layer 20 that is formed from an AlxGa1-xN layer that has an Al composition of x at which the electron affinity of AlxGa1-xN and the electron affinity of SiC are substantially the same is formed on an SiC substrate 10 without an AlN layer therebetween.

A composition including an acid-sensitive polymer comprising a first repeating unit derived from a monomer comprising an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound that has a greater electron affinity than an electron affinity of the photoacid generator compound, wherein the non-polymeric electron acceptor compound does not generate a photoacid, and wherein the non-polymeric electron acceptor compound does not comprise a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, wherein the solvent is present in the composition in an amount greater than 50 weight percent, based on total weight of the composition, wherein the composition is a positive-acting EUV photoresist or an electron beam resist.

The invention discloses a superlattice blue-green light enhanced photoelectric cathode which comprises a gallium arsenide cap layer, a superlattice absorption layer and a window layer which are arranged in a stacked mode, the thickness of the gallium arsenide cap layer is larger than or equal to 3 nanometers and smaller than or equal to 10 nanometers, and the outer surface of the gallium arsenide cap layer is a negative electron affinity surface; the superlattice absorption layer comprises a plurality of gallium-arsenic-phosphorus barrier layers and a plurality of indium-gallium-arsenic well layers, and the gallium-arsenic-phosphorus barrier layers and the indium-gallium-arsenic well layers are alternately stacked to form a plurality of periodic structures. The thickness of each periodic structure is greater than or equal to 5 nanometers and less than or equal to 15 nanometers to shift the peak value of the light absorption wavelength of the photocathode to a wavelength range greater than or equal to 500 nanometers and less than or equal to 600 nanometers. The superlattice absorption layer is arranged, so that electrons and holes are limited by quantum in the indium gallium arsenic well layer, energy level splitting is triggered, and absorption spectrum blue shift is further achieved.

The invention discloses a selenium-doped mercury telluride quantum dot short-wave infrared detector and a preparation method thereof. The infrared detector comprises an electron transport layer, a selenium-doped mercury telluride quantum dot layer and a hole transport layer, the method comprises the following steps: preparing the selenium-doped mercury telluride quantum dot layer on one side of the electron transport layer; preparing a CdTe quantum dot solution; and spin-coating a CdTe quantum dot solution on the selenium-doped mercury telluride quantum dot layer, and soaking the selenium-doped mercury telluride quantum dot layer by using an HgCl2 solution, so that the CdTe quantum dot solution and the HgCl2 solution are subjected to cation exchange to obtain an HgTe quantum dot film, thereby preparing the hole transport layer. When the hole transport layer is prepared, a CdTe quantum dot film is exchanged into an HgTe small-size quantum dot film by utilizing solid-phase cation exchange, so that the size bottleneck of preparing HgTe quantum dots through non-aqueous phase synthesis is broken through, a relatively large electron affinity difference between an owner of the hole transport layer and the selenium-doped mercury telluride quantum dot layer is achieved, dark current is reduced, and the carrier separation efficiency is improved; the characteristics of low dark current and high light response are realized.

The invention relates to a rectifier antenna comprising: an antenna (10); a MIIM-type diode 20 having a first metallic layer (21), a first insulating layer (22) made of a first electrical insulator (I1) with electron affinity φ1, a second insulating layer (23) made of a second electrical insulator (I2) with an electron affinity φ2 lower than φ1, and a second metallic layer (24). The second electrical insulator (I2) has a dielectric constant εr2 lower than the dielectric constant εr1 of the first electrical insulator (I1), and is a silicon oxide with a thickness between 0.5 and 2 nm. Figure for the abstract: Fig. 2A

A selector and a manufacturing method therefor are provided. The selector includes a first electrode layer, a selection layer, a buffer layer, a barrier layer, and a second electrode layer. The selection layer, the buffer layer, and the barrier layer are stacked between the first electrode layer and the second electrode layer. An electron affinity of the barrier layer is less than an electron affinity of the selection layer, and an electron affinity of the buffer layer is between the electron affinity of the selection layer and the electron affinity of the barrier layer.

A light-emitting device includes a first light-emitting layer disposed between a cathode and an anode and having a light emission central wavelength being a first wavelength; a second light-emitting layer disposed between the anode and the first light-emitting layer, having a light emission central wavelength being a second wavelength shorter than the first wavelength, and having an electron affinity lower than an electron affinity of the first light-emitting layer; and a first electron transport layer disposed between the first light-emitting layer and the second light-emitting layer in the second light-emitting region and having magnitude of an electron affinity between an electron affinity of the first light-emitting layer and an electron affinity of the second light-emitting layer.

In a first step S101, a first region in which a polarity inversion layer is formed, and a second region in which the polarity inversion layer is not formed are provided on a substrate. Next, in a second step S102, a first nitride semiconductor is epitaxially grown on the substrate having the first region and the second region along the c-axis direction such that a first semiconductor layer is formed. Next, in a third step S103, a second nitride semiconductor is epitaxially grown on the first semiconductor layer along the c-axis direction such that a second semiconductor layer is formed on the first semiconductor layer. The second nitride semiconductor has different polarization, electron affinity, and band-gap energy from the first nitride semiconductor. The second semiconductor layer forms a heterojunction with the first semiconductor layer. The interface therebetween has a polarization charge, which is positive or negative depending on polarity.