2725 results about "Band gap" patented technology

The present disclosure relates to the technical field of back contact solar cells, and in particular relates to a combined passivation back contact solar cell having front wide band gap doping, and a preparation method therefor. The solar cell comprises a silicon wafer, and a first semiconductor layer, a second semiconductor layer and a third semiconductor layer arranged on the front face of the silicon wafer. The third semiconductor layer comprises a second tunneling oxide layer and a third doped polycrystalline silicon layer, provided in sequence from inside to outside. The third doped polycrystalline silicon layer is a doped polycrystalline silicon layer containing a first doping element and a second doping element, the first doping element being phosphorus, and the second doping element comprising any one of carbon and oxygen. Furthermore, the band gap width of the third doped polycrystalline silicon layer is ≥1.6eV. The present disclosure, while ensuring a passivation effect, can greatly decrease device investment costs, greatly reduce parasitic absorption of a third semiconductor layer on the front surface of a cell, and increase short-circuit current of the cell, thereby increasing cell conversion efficiency.

The invention belongs to the technical field of perovskite solar cells, and provides synthesis and application of a novel self-assembled monomolecular hole transport material with conjugated extended tail ends. According to the self-assembled monomolecular hole transport material, a carbazole group is used as a terminal core, an aromatic ring is introduced to the terminal of carbazole to extend a conjugated structure, an alkyl chain is used as a connecting unit, phosphoric acid or acetic acid is used as an anchoring group, and the self-assembled monomolecular hole transport material with conjugated extended terminal is formed. And the stability, the hole transport property, the hole extraction capability and the interface passivation capability of the material are improved. Experiments show that the self-assembled monomolecular hole transport material has an HOMO energy level matched with a perovskite layer, and hole transport is facilitated. When the self-assembled monomolecular hole transport material disclosed by the invention is applied to a trans-perovskite solar cell with a band gap of 1.53 eV, the photoelectric conversion efficiency as high as 26.11% is obtained, and excellent device stability is shown.

The invention provides a heat dissipation optimization method and system for a graphene semiconductor, and relates to the technical field of graphene semiconductors, and the method comprises the steps: determining a honeycomb structure based on a graphene semiconductor material which has a heat radiation coefficient identifier and a heat conduction coefficient identifier; configuring a plurality of heat dissipation flow lines corresponding to different heat dissipation modes; configuring a plurality of heat dissipation distribution maps corresponding to different heat dissipation modes; analyzing the influence of the band gap on the thermal radiation characteristic, and determining a first semiconductor characteristic influence index; analyzing the influence of the band gap on the heat conduction characteristic, and determining a second semiconductor characteristic influence index; and establishing a heat dissipation performance evaluation model, and performing heat dissipation iterative optimization in combination with the plurality of heat dissipation flow lines and the plurality of heat dissipation distribution maps. The technical problem that stable heat dissipation performance cannot be provided in diversified application scenes due to the fact that the heat dissipation design in the prior art is difficult to flexibly adapt to the requirements of different heat dissipation modes is solved.

The invention provides a heterojunction solar cell and a preparation method thereof, and the method comprises the steps: sequentially arranging oxygen-containing crystalline silicon layers of a first conduction type on the surface, far away from a substrate, of a first passivation layer through employing a set deposition technology, wherein the oxygen atom doping concentration of the oxygen-containing crystalline silicon layers is gradually increased in the direction away from the substrate; on one hand, light oxygen doping is arranged at the interface of the first passivation layer, so that the dark attenuation phenomenon of a heterojunction cell is reduced, and the power off-shift problem of a photovoltaic module is further reduced; on the other hand, heavy oxygen doping is arranged on one side far away from the first passivation layer, so that the optical band gap and the short-circuit current of the crystalline silicon layer on the light receiving surface are effectively improved; and finally, oxygen-free doping is arranged at an interface adjacent to the transparent conducting layer, so that ohmic contact between the oxygen-containing crystal silicon layer and the transparent conducting layer is effectively reduced. Therefore, the comprehensive electrical performance of the heterojunction solar cell is effectively ensured and improved.

The invention discloses a doped material based on a hexagonal boron nitride / titanium dioxide heterojunction and a preparation method thereof. According to the material, a heterojunction is formed by hexagonal boron nitride and titanium dioxide, and the light absorption performance, the carrier mobility and the photocatalytic efficiency are optimized by doping a nitrogen element, an iron element and a fluorine element; wherein the doped nitrogen element can reduce a band gap by introducing a defect energy level, and broaden a light absorption range to a visible light region and an infrared light region; the doped iron element can promote carrier separation by introducing an intermediate energy level; the doped fluorine element can inhibit carrier recombination by reducing surface defects. The light absorption efficiency of the material in the ultraviolet light range can be improved by constructing the layered # imgabs0 # heterojunction composite material, and the migration rate of electrons and holes can be improved by doping the N element, the Fe element and the F element in the # imgabs1 #, so that the oxidation-reduction reaction is promoted, and reference significance is provided for further improving the application effect of a photocatalyst in sewage treatment.

------ Acoustic Enclosure and Method for Leveling an Acoustic Enclosure The present invention relates to an acoustic enclosure (20) comprising a loudspeaker (21) mounted flush on a front face of the enclosure (20), characterized in that at least one Helmholtz resonator (26) is formed on the front face of the enclosure (20) between each lateral edge of the front face and the loudspeaker (21), the at least one Helmholtz resonator (26) being dimensioned to have a band gap to block the propagation, in the plane of the front face of the enclosure (20), of acoustic waves in the useful frequency band of the loudspeaker (21). Figure to be published with the abstract: Figure 6a

The invention relates to a photodynamic antibacterial fiber as well as a preparation method and application thereof. The preparation method of the photodynamic antibacterial fiber comprises the following steps: S1, preparing a bismuth sulfide / Michelene composite material; s2, mixing the bismuth sulfide / Michelene composite material with spinning slices, a coupling agent, a lubricant and a nucleating agent to obtain a mixture; and S3, carrying out melt electrostatic spinning on the mixture. The Bi2S3 / MXene composite material is prepared by coupling an n-type direct band gap semiconductor Bi2S3 with excellent photosensitivity and good absorption capability in a wide wavelength with MXene with excellent conductivity, relatively strong light absorption and conversion capability and good biocompatibility, so that the electron hole separation efficiency and the light absorption capability of the semiconductor can be effectively improved; the Bi2S3 / MXene composite material which can realize full-wave-band photodynamic antibiosis and has high ROS yield is constructed, so that the antibiosis efficiency of the prepared fiber is improved.

The invention discloses a household nano self-cleaning material containing rare earth elements and a preparation method of the household nano self-cleaning material, and aims at solving the problems that a traditional self-cleaning material is narrow in light response range, single in function, poor in durability, non-environment-friendly in preparation process and the like. The material comprises 5-15 parts of rare earth oxide, 50-70 parts of nano titanium dioxide, 10-20 parts of mesoporous silica, 3-8 parts of a fluorinated modifier and 2-5 parts of a bio-based adhesive. Wherein the rare earth elements are doped in titanium dioxide crystal lattices, so that the forbidden band width is reduced, the photocatalytic response range is widened to visible light, and the photocatalytic efficiency is remarkably improved. The preparation method of the material comprises the steps of precursor preparation, hydrothermal reaction, fluorination modification and coating forming, a low-temperature hydrothermal method, supercritical CO2 modification and a photocuring technology are adopted, and the material has the functions of self-cleaning, antibiosis and VOCs degradation, is suitable for various base materials such as household building materials, textiles and electric appliance surfaces, meets the composite requirements of modern home for health and environmental protection, and has wide application prospects. And the preparation process is green and pollution-free, and conforms to the sustainable development concept.

The invention discloses a composite hollow-core optical fiber and application thereof in detection of hydrocarbon gas, and belongs to the technical field of optical fibers. The composite hollow-core optical fiber sequentially comprises an outer cladding layer, an inner cladding layer and a fiber core from outside to inside. The inner cladding is an anti-resonance area and comprises four anti-resonance units which are uniformly distributed in the circumferential direction, and each anti-resonance unit comprises three layers of circular micro capillary tubes which are coaxially nested in sequence from inside to outside; the outer cladding is a photonic band gap region, comprises a plurality of air holes which are tangent to one another, and is of a hexagonal structure as a whole; the fiber core is filled with air and is formed by encircling a plurality of anti-resonance units in the inner cladding. The composite hollow-core optical fiber has the characteristics of a hollow-core photonic band gap optical fiber and a hollow-core anti-resonance optical fiber, a three-layer circular micro capillary structure is adopted, light can be effectively limited in a fiber core, and transmission loss is reduced; and the composite hollow-core optical fiber can work under the ultra-wide wavelength condition of 5.5-9.5 [mu] m, so that the requirement for detecting toxic hydrocarbon gas is met.

The invention relates to a formamidine thiosulfate second-order nonlinear optical crystal and preparation and application thereof, the chemical formula of the crystal material is [CH (NH2) 2] 2SO3S, the molecular weight is 203.27, the crystal material belongs to an orthorhombic crystal system, the space group is P212121, the unit cell parameter is # imgabs 0 # alpha = beta = gamma = 90 degrees, Z = 4, and the unit cell volume is # imgabs 1 #. Under 1064nm laser irradiation, the frequency doubling intensity of the powder is about two times that of monopotassium phosphate crystals, and phase matching can be realized. In addition, the crystal material has a wide light transmission wave band, the ultraviolet absorption cut-off edge is 253 nm, the optical band gap is 4.90 eV, and the crystal material is easy to grow. The wavelength range of the coherent light source can be expanded by using optical frequency conversion technologies such as second harmonic generation and optical parametric amplification. Therefore, the crystal material has important application value in the fields of laser frequency conversion, photoelectric information storage and the like.

This semiconductor light-receiving element (1) is provided with: a substrate (10); a semiconductor laminated part (20) that is formed on the substrate (10); and a first electrode (40) and a second electrode (50) that are electrically connected to the semiconductor laminated part (20). The semiconductor laminated portion (20) includes a light absorption layer (24) including InGaAs and including a first region (24a) of a first conductivity type, a first semiconductor layer (S1) located between the substrate (10) and the light absorption layer (24), a second semiconductor layer (S2) located on the opposite side of the substrate (10) with respect to the light absorption layer (24), and a first region (24a) of a second conductivity type formed of InP, InGaAsP, InAsP, InGaAsP, InAsP, InGaAsP, InAsP, InGaAsP, InAsP, InGaAsP, InGaAsP, InAsP, InGaAsP, InGaAsP, InAsP, InGaAsP, InGaAsP, InGaAsP, InGaAsP, InGaAsP, InGaAsP, and a capacitance reduction layer (23) of the first conductivity type, which has an arbitrary configuration of AlInGaAs and is positioned between the light absorption layer (24) and one of the first semiconductor layer (S1) and the second semiconductor layer (S2), and which has a carrier concentration of 5 * 1015 cm-3 or less and is higher than the carrier concentration of the first region (24a) of the light absorption layer (24). The band gap of the capacitance reduction layer (23) is larger than the band gap of the light absorption layer (24).

The invention provides a topological polygonal laser. According to the device, a topological non-trivial domain formed by two-dimensional gyromagnetic photonic crystals is combined with a trivial domain, and an out-of-plane magnetic field externally applied to a sublattice A is started to open an energy band gap, so that a multi-position angular state is realized. The two-dimensional gyromagnetic photonic crystal opens or closes an out-of-plane magnetic field externally applied to the sub-lattice A so as to realize opening and closing of the angular state of the topological angular state laser. The topological multi-angular-state laser is realized by taking the two-dimensional gyromagnetic photonic crystal as a platform, and the topological multi-angular-state laser has the advantages that switching of angular states can be realized without changing the structure, and the laser is topologically protected and has topological robustness.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

A nitride semiconductor device includes a semiconductor layered structure including a substrate, a channel layer, and a barrier layer. The channel layer is formed above the substrate and made of a nitride semiconductor layer. The barrier layer is formed on the channel layer, has a wider band gap than the channel layer, and is made of a nitride semiconductor layer. The semiconductor layered structure includes an isolation region in which impurities are implanted. The position of an impurity concentration peak in the depth direction in the isolation region is deeper than the interface between the barrier layer and the channel layer. The concentration of the impurities at the interface between the barrier layer and the channel layer in the isolation region is lower than the concentration at the impurity concentration peak.

A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer, a first electrode provided on the second nitride semiconductor layer, a second electrode provided on the second nitride semiconductor layer, a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in connect with the second nitride semiconductor layer and including a first insulating material, a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, on the first insulating film, and on the second nitride semiconductor layer between the first insulating film and the second electrode, the second insulating film including a second insulating material, a third electrode provided on the second insulating film between the first electrode and the first insulating film, and a fourth electrode including a first electrode portion and a second electrode portion, the first electrode portion being provided on the second insulating film between the third electrode and the first insulating film, and the second electrode portion being provided on the second insulating film on the first insulating film and being electrically connected to the first electrode portion.

Provided is an optical transmitter having high manufacturing stability and a high reflection suppression effect. In the optical transmitter, a distributed feedback (DFB) laser having an active region formed as a multiple quantum well that generates an optical gain by current injection and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a multiple quantum well having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction by an angle θwg, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser are monolithically integrated on one substrate. The passive waveguide has a tapered region and a narrow waveguide region. The tapered region converts a width W1 of the passive waveguide connected to the SOA into a width W2 of the narrow waveguide region, and the passive waveguide forms the angle θwg with respect to a normal line to an end surface of the substrate and is in contact with the end surface of the substrate.

The invention relates to an electromagnet nonlinear variable stiffness unit cell and metamaterial vibration isolation support which comprises an electromagnet-spring-electromagnet variable stiffness unit, an auxiliary stiffness adjusting component and a stiffness adjusting and eddy current damping energy dissipation component, and the electromagnet-spring-electromagnet variable stiffness unit comprises a first electromagnet, a second electromagnet and a pre-pressing spring. The first electromagnet and the second electromagnet are connected through a pre-pressing spring, the auxiliary rigidity adjusting component comprises a magnetic support and a hollow sleeve, the electromagnets are connected with the magnetic support through springs, the rigidity adjusting and eddy current damping energy dissipation component comprises an electrified guide plate and a magnetic guide plate, and the electrified guide plate and the magnetic guide plate are arranged on the hollow sleeve at intervals. The electromagnet-spring-electromagnet variable stiffness unit penetrates through the hollow sleeve in a suspended mode. Compared with the prior art, the time-varying controllable and adjustable rigidity in the local resonance unit in the metamaterial unit cell is realized, and the self-adaptive band gap adjustment and vibration reduction enhancement effect based on the displacement amplitude is realized.

The invention belongs to the technical field of photovoltaic solar materials, and particularly relates to a high-conversion-efficiency perovskite precursor material and a preparation method thereof. The high-conversion-efficiency perovskite precursor material is composed of phenyl ammonium cesium composite cations, metal halide, an additive, a nuclear auxiliary agent and a solvent. By compounding phenylethyl ammonium iodide and cesium iodide, phenylammonium and cesium cations are introduced into perovskite crystal lattices, organic-inorganic balance of the material is optimized, phenylammonium promotes formation of a quasi-two-dimensional structure, and damp-heat stability is enhanced; cesium ions fill A-site gaps, so that crystal lattices are tighter, and the thermal stability and the photoelectric conversion efficiency are improved; the synergistic matching addition of the metal halide realizes band gap regulation and control and spectrum matching, and quaternary ammonium salt adjusts nucleation and grain growth, so that a uniform film structure is ensured, and defects are reduced; and guanidine salt passivates defects after crystal growth, stabilizes crystal lattices, and improves charge life and device efficiency.

The invention discloses a photonic crystal topological optimization method, system and equipment based on an improved genetic algorithm and a medium. The method comprises the following steps: establishing a finite element model of a photonic crystal and a hash table for storing band gap information of the calculated photonic crystal; performing population initialization, calculating photonic crystal band gaps corresponding to all individuals in the current population, directly calling band gap information of the calculated photonic crystal structure from the hash table, and calculating band gaps of other photonic crystal structures through a finite element method; eelist retention is performed for all generations other than the first generation until a termination condition is satisfied. On the basis of a traditional photonic crystal topological optimization method based on a genetic algorithm, the calculation amount of finite elements in the algorithm is greatly reduced by introducing the hash table, the optimization efficiency of the algorithm is improved, and topological optimization of the photonic crystal can be completed in a short time.

The application relates to a high-order curvature compensation band gap reference circuit, which comprises a first-order band gap reference circuit, a high-temperature region curvature compensation circuit and a starting circuit. The first-order band gap reference voltage is realized by the following technologies: the voltage generated by the current of PMOS tube M4 on resistors R3-R4 and the voltage generated by the current of PMOS tube M6 on resistor R4 both have positive temperature coefficients, the voltage generated by the current of PMOS tube M5 on resistors R3-R4 and the voltage generated by the current of PMOS tube M7 on resistor R4 both have negative temperature coefficients; the working area of NMOS tube M13 gradually changes from the deep triode region, the triode region to the saturation region with the increase of temperature by controlling the working of NMOS tube M13 by the technology that the gate voltage of NMOS tube M12 increases with the increase of temperature, so that the current of PMOS tube M14 is high-order nonlinear with temperature, and the first-order band gap reference voltage is temperature compensated, thereby obtaining the high-order temperature compensation band gap voltage.

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source circuit with high-order compensation, which comprises a PTAT (proportional to absolute temperature) generation circuit, a high-order compensation circuit and a pre-voltage-stabilizing circuit, wherein the PTAT generation circuit generates PTAT current, and the high-order compensation circuit performs second-order compensation on the PTAT current; the pre-voltage-stabilizing circuit is used for driving the PTAT generation circuit and the high-order compensation circuit and comprises a starting circuit, a positive feedback loop and a negative feedback loop; the gain of the positive feedback loop is lower than that of the negative feedback loop; according to the band-gap reference voltage source circuit, the temperature coefficient and the power supply rejection ratio of the circuit are remarkably optimized by integrating high-order temperature compensation, a pre-adjusting power supply and a high-gain feedback loop, and the designed band-gap reference voltage source circuit has the advantages of being extremely low in temperature drift and high in precision.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

The invention discloses an anthraquinone-based MOF photocatalytic material as well as a preparation method and application thereof. The anthraquinone-based MOF photocatalytic material is prepared by carrying out solvothermal reaction on a ligand DPAq and a nickel source in a mixed solvent, wherein the ligand DPAq is 2, 6-bis (pyrazol-4-yl)-9, 10 anthraquinone, and the mixed solvent is a composition of N, N-dimethylformamide and water. The anthraquinone-based MOF photocatalytic material shows an appropriate band gap and good ROS generation efficiency and shows excellent catalytic activity and selectivity when applied to benzylamine coupling reaction, the reaction selectivity reaches 100%, the product yield can reach 97%, and the catalytic reaction efficiency is high; the product can be recycled, and the yield of the product can still reach 92% after the product is recycled for 5 times.

The invention relates to the technical field of acoustic function material structure design, in particular to a Kresling origami-based local resonance phononic crystal, which comprises a substrate and a vibration reduction array embedded on the substrate, the vibration reduction array comprises a plurality of unit cell structures arranged in an array. Each unit cell structure comprises at least two spiral Kresling paper folding structures, and lead injection holes penetrating through the Kresling paper folding structures are formed in the Kresling paper folding structures. The substrate is one of an Archimedes spiral parallel plate, a chessboard embedded paper-cut, a double-layer Miura origami or a bistable shell based on a shape memory polymer; the material of the Kresling origami structure is lead, the density is 11600 kg / m < 3 >, the elastic modulus is 20.80 GPa, and the Poisson ratio is 0.369. According to the local resonance photonic crystal provided by the invention, through the unique geometric characteristics, a remarkable vibration band gap is generated in a low-frequency band, and vibration propagation in a specific frequency band is effectively inhibited; according to the Kresling paper folding structure, diversified vibration band gap configuration can be achieved by adjusting the folding angle and the number of layers.

The invention discloses a preparation method of a triazinyl covalent organic framework (COF) material and application of the triazinyl covalent organic framework material in photocatalytic production of hydrogen peroxide. The amino starting monomer is regulated and controlled through a side chain regulation and control strategy to obtain the COF with a functional group, and the COF can be connected into a ring by thienopyridine through post-modification to replace an original imine bond, so that the planarity and the conjugation degree of the COF are obviously improved, and the COF has good light absorption capacity and a proper band gap; therefore, the COFs photocatalyst has excellent photocatalytic hydrogen peroxide production capacity in a water-benzyl alcohol system under a light source, and a beneficial thought can be provided for designing a high-performance COFs photocatalyst.

The invention provides a gallium nitride-based light emitting diode epitaxial structure, a preparation method thereof and an LED chip. In the epitaxial structure, a multi-stage electron-phonon scattering structure is designed for the situations of electron acceleration and hot electron transition caused by electron ballistic transport and a quantum stark effect structure in a quantum well, the forbidden band width of a quantum well layer in a multi-quantum well barrier layer is gradually increased, and an InGaN step structure is used for inhibiting electron leakage under different situations, so that the quantum efficiency is improved. And the external quantum efficiency under large current is effectively improved.

The invention provides a microstrip antenna structure, a design method and a millimeter wave radar, the microstrip antenna structure comprises an antenna main body, and the antenna main body comprises a top copper sheet, a dielectric substrate and a bottom copper sheet. And at least two groups of comb-shaped antennas and one group of electromagnetic band gap structures between every two adjacent groups of comb-shaped antennas are respectively formed on the top-layer copper sheet through etching. The electromagnetic band gap structure comprises a plurality of mutually connected electromagnetic band gap units, the opening directions of two adjacent electromagnetic band gap units are opposite, the former electromagnetic band gap unit and the radiation sheet on one side of the first group of comb antennas are conformally designed, and the latter electromagnetic band gap unit and the radiation sheet on the other side of the second group of comb antennas are conformally designed. According to the invention, the size of a circuit board does not need to be increased, the band gap characteristic can be realized only by changing the structure or distribution of the EBG, the space is saved, and the application is flexible.

A method for manufacturing a semiconductor structure includes: forming a gate electrode; forming a gate dielectric layer over the gate electrode; forming a channel over the gate dielectric layer opposite to the gate electrode, the channel including a semiconductor material; forming a first confinement layer on the channel opposite to the gate electrode, an energy band gap of the first confinement layer being greater than an energy band gap of the channel; and forming a drain electrode and a source electrode which are connected to the channel, the drain electrode and the source electrode being spaced apart from each other and each including an electrically conductive material.

A decrease in image quality is suppressed. A solid-state imaging apparatus according to an embodiment includes: a photoelectric conversion unit (PD) including a material having a smaller band gap energy than silicon; and a circuit board joined to the photoelectric conversion unit, the circuit board including: a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and a thermometer circuit that detects a temperature of the circuit board.