1085 results about "Band gap" patented technology

------ Acoustic Enclosure and Method for Leveling an Acoustic Enclosure The present invention relates to an acoustic enclosure (20) comprising a loudspeaker (21) mounted flush on a front face of the enclosure (20), characterized in that at least one Helmholtz resonator (26) is formed on the front face of the enclosure (20) between each lateral edge of the front face and the loudspeaker (21), the at least one Helmholtz resonator (26) being dimensioned to have a band gap to block the propagation, in the plane of the front face of the enclosure (20), of acoustic waves in the useful frequency band of the loudspeaker (21). Figure to be published with the abstract: Figure 6a

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source circuit with high-order compensation, which comprises a PTAT (proportional to absolute temperature) generation circuit, a high-order compensation circuit and a pre-voltage-stabilizing circuit, wherein the PTAT generation circuit generates PTAT current, and the high-order compensation circuit performs second-order compensation on the PTAT current; the pre-voltage-stabilizing circuit is used for driving the PTAT generation circuit and the high-order compensation circuit and comprises a starting circuit, a positive feedback loop and a negative feedback loop; the gain of the positive feedback loop is lower than that of the negative feedback loop; according to the band-gap reference voltage source circuit, the temperature coefficient and the power supply rejection ratio of the circuit are remarkably optimized by integrating high-order temperature compensation, a pre-adjusting power supply and a high-gain feedback loop, and the designed band-gap reference voltage source circuit has the advantages of being extremely low in temperature drift and high in precision.

A method of forming a device comprises forming sacrificial pillar structures over conductive structures overlying a barrier structure substantially impermeable to hydrogen. The sacrificial pillar structures are separated from one another by trenches linearly extending in a first lateral direction orthogonal to a second lateral direction in which the conductive structures linearly extend. Gate electrodes are formed within the trenches and laterally adjacent sidewalls of the sacrificial pillar structures. The sacrificial pillar structures are removed to form openings between the gate electrodes. Dielectric liner structures are formed within the openings and laterally adjacent sidewalls of the gate electrodes. Channel structures are formed within the openings after forming the dielectric liner structures. The channel structures comprise a semiconductive material having a band gap larger than that of polycrystalline silicon. Conductive contacts are formed on the channel structures. A device, a memory device, and an electronic system are also described.

The invention provides a method for analyzing femtosecond laser-induced damage behaviors on the surface of a Zn-doped KDP crystal, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively analyzing the influence of the Zn doping amount on the band gap and electroacoustic coupling of the KDP crystal through an ultraviolet-visible absorption spectrum and a Brillouin light scattering spectrum; then constructing a one-dimensional model, respectively simulating the electron density, lattice temperature and time evolution of electron temperature on the surface of the Zn-doped KDP crystal under femtosecond laser irradiation through an electron density accumulation rate equation and a double-temperature model, and theoretically analyzing the influence of the Zn doping amount on the damage behavior of the surface of the KDP crystal. And a theoretical model for calculating the femtosecond laser induced damage threshold is established, so that the optimal doping amount of Zn is determined in a lossless manner. A real sample is not contacted, so that the sample utilization rate is improved; the simulation process is more stable and controllable, and the data repeatability is high; and the research period can be shortened, and optimal doping amount screening is accelerated.

The invention provides an artificial intelligence grading classification-regression combination prediction method for multi-class materials, and belongs to the technical field of material informatics and artificial intelligence. According to the method, a historical sample data set of material chemical composition and crystal structure information is obtained, a band gap value is divided into a plurality of intervals based on an equal width principle, and interval labels are generated. Key features are extracted, an SVM classification model is trained to predict a band gap interval, and then a multi-layer neural network regression model is utilized to predict a band gap value. If the highest confidence coefficient is higher than the threshold value, directly calling the multi-layer neural network regression model of the corresponding interval; and if the value is lower than the threshold value, multi-interval parallel regression and weighted fusion prediction are carried out. According to the artificial intelligence grading classification-regression combination prediction method for the multi-class materials, the precision and robustness of band gap prediction can be effectively improved, particularly, the performance is prominent when high and low band gap samples are distributed imbalanced, and a precise and reliable solution is provided for material band gap prediction.

The invention discloses a low-power-consumption low-temperature-drift band-gap reference voltage source which comprises a VBE nonlinear term compensation circuit and an output voltage generation circuit, the VBE nonlinear term compensation circuit is matched with a bipolar transistor through an MOS tube current mirror image, the nonlinear temperature drift of output voltage is compensated, linearized VBE voltage is generated, and the output voltage generation circuit is connected with the VBE nonlinear term compensation circuit. And the output voltage generation circuit generates a voltage in direct proportion to absolute temperature through a differential pair structure, superposes the voltage with the linearized VBE voltage, and outputs a reference voltage. According to the low-power-consumption low-temperature-drift band-gap reference voltage source, temperature drift is compensated through the VBE nonlinear term compensation circuit, the output voltage generation circuit integrates signals to generate initial stable reference voltage, the temperature drift coefficient trimming circuit finely adjusts the temperature drift coefficient, and finally the reference voltage which is high in precision, low in temperature drift and good in consistency is output.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention belongs to the technical field related to structure optimization design, and discloses a topological optimization method and device for a metamaterial microstructure capable of bearing a band gap, and the method comprises the steps: (1) respectively defining an interpolation penalty coefficient of a Young modulus for the homogenization analysis of the microstructure and the band gap problem of an energy band structure according to the performance analysis of the microstructure, calculating an interpolation penalty coefficient of the mass density; (2) carrying out homogenization analysis of the microstructure based on dynamics to obtain equivalent physical property parameters and determine equivalent material modulus; (3) defining an irreducible first Brillouin region wave vector path of the microstructure based on the geometric symmetry constraint of the microstructure, and further calculating a band gap quality factor between adjacent energy band curves of the microstructure; and (4) establishing a topological optimization model which takes the equivalent modulus as a grading constraint and takes band gap quality factor maximization as a target, and performing iterative optimization based on the topological optimization model to obtain an optimal microstructure configuration. According to the invention, efficient and stable design of the microstructure is realized.

An organic electroluminescence device includes an anode, a cathode, and an emitting region interposed between the anode and the cathode. The emitting region includes a first sensitizing layer and a first emitting layer. The first sensitizing layer contains a first host material and a first sensitizing material; and the first emitting layer contains a second host material and a first luminescent compound. The first host material and the second host material are mutually different; and the first sensitizing material and the first luminescent compound are mutually different. The lowest singlet energy S1(G1) and the energy gap T77K(G1) at 77K of the first sensitizing material satisfy (Numerical Formula 1): ΔST(G1)=S1(G1)−T77K(G1)<0.5 eV.

The invention provides a submarine cable accurate positioning method and system based on a double-difference positioning reverse principle. The method comprises the following steps: arranging and sequentially exciting active seismic sources in a target sea area, acquiring backward Rayleigh scattering signals along a submarine cable by using a distributed optical fiber sound wave sensing system, and demodulating and preprocessing to obtain strain rate data; constructing a topological acoustic propagation model containing a nonlinear correction term, forming a topological acoustic mode when the excitation frequency falls into a topological band gap, and extracting a robust signal as input; calculating travel time difference based on double-difference reverse modeling and constructing a residual equation set, and obtaining a preliminary positioning result of the submarine cable by using a weighted resolving method; and path correction and iterative optimization are carried out in combination with topological acoustic model characteristics, so that a positioning result with higher precision can be obtained. According to the method, double-difference reverse modeling is introduced to be combined with topological acoustic model optimization, so that the submarine cable positioning precision and the anti-interference capability are remarkably improved, and the method is suitable for construction monitoring, operation and maintenance management and risk assessment of submarine cables.

To provide a liquid dispensing device that can increase the frequency of the drive signal. [Solution] A capacitive load drive circuit that outputs a drive signal to displace a capacitive load comprises: an amplification circuit that outputs an amplified modulated signal by driving a first transistor that is driven in accordance with a first gate drive signal corresponding to a modulated signal obtained by modulating a base drive signal output by a modulation circuit, and a second transistor that is driven in accordance with a second gate drive signal corresponding to the modulated signal; and a demodulation circuit that outputs a drive signal obtained by demodulating the amplified modulated signal, wherein at least one of the first transistor and the second transistor comprises a first layer containing a first nitride semiconductor and a second layer containing a second nitride semiconductor having a larger band gap than the first nitride semiconductor, with the second layer positioned above the first layer, in a liquid dispensing device.

The invention relates to a machine learning and physical priori knowledge constraint-based double perovskite halide material layer-by-layer screening method, equipment and a medium, and aims at solving the problems of low efficiency, large candidate space and insufficient multi-performance balance of a traditional data-driven screening framework, and constructing a cascade screening method taking spectral maximum efficiency (SLME) as a guide. Discovery of a high-precision photovoltaic material is realized through a progressive decision chain strictly following the sequence of space group symmetry, SLME, band gap characteristics and thermodynamic stability. A candidate material space is constructed based on an element coordination environment and a charge neutrality principle, the structural stability is primarily screened by using a new tolerance factor, then layer-by-layer screening is performed sequentially through a machine model, and finally a high-performance material is screened out. Compared with the prior art, the invention provides a layer-by-layer screening method which takes SLME as a core and is constrained by physical priori knowledge, and multi-dimensional efficient screening from structure, optics, electricity to stability is realized.

The invention discloses a band-gap reference circuit, a working method thereof and electronic equipment, and relates to the technical field of band-gap reference circuits. The circuit comprises a pre-voltage-stabilizing module; the starting module is electrically connected with the pre-voltage-stabilizing module; the band gap core module is electrically connected with the starting module; the operational amplifier module is electrically connected with the band gap core module and the pre-voltage-stabilizing module; wherein the band-gap core module is used for outputting a reference voltage source; the pre-voltage-stabilizing module is used for buffering power supply voltage to obtain working voltage and providing the working voltage for the starting module and the operational amplifier module, and the pre-voltage-stabilizing module is further used for feeding back the influence of fluctuation of the power supply voltage on the reference voltage source to the pre-voltage-stabilizing module for readjustment; the starting module is used for starting the band gap core module; and the operational amplifier module is used for performing negative feedback regulation on the reference voltage source. The circuit can provide a reference voltage source with high PSRR and low temperature drift.

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory.SOLUTION: Thin film transistor integrated circuits such as an LSI, a CPU, and a memory are manufactured using semiconductors whose channel regions are formed using semiconductors which are intrinsic or substantially intrinsic by removal of an impurity which serves as an electronic donor (donor) and whose energy gap is larger than that of silicon semiconductors. With the use of the thin film transistor, power consumption due to leakage current can be reduced.SELECTED DRAWING: Figure 1

The invention relates to the technical field of functional polymer composite materials, in particular to an intermediate film for laminated glass based on color generation of a photonic crystal structure and a preparation method of the intermediate film. The intermediate film comprises a thermoplastic resin matrix and a three-dimensional photonic crystal structure region dispersed in the thermoplastic resin matrix, wherein the three-dimensional photonic crystal structure region is formed by self-assembly of monodisperse microspheres, and the central wavelength of a photonic forbidden band of the region is located in a visible light range. According to the invention, a three-dimensional photonic crystal structure is constructed in the intermediate film, and structural color generation is generated by utilizing selective reflection of the photonic band gap effect on visible light with a specific wavelength. According to the laminated glass, the color is generated by interference of light instead of absorption of chemical pigments, so that the color can be continuously and regularly changed along with the change of an observation angle or an incident light angle, the dynamic and changing visual aesthetic feeling is given to the laminated glass, and the higher requirements of the fields of modern buildings, automobiles and the like on dynamic aesthetics and personalized appearance are met.

Disclosed is a photodetector, preferably a mid-infrared photodetector, composition comprising semiconductor particles (101) comprising a band gap of less than 1.5 eV, preferably less than 1eV, and metal nanoparticles (103), wherein the semiconductor particles are interconnected via electrically conducting bridges (102) comprising the metal nanoparticles thereby forming an electrically conductive network. A photodetector comprising the composition and a method of manufacturing the composition are also described.

The invention provides a semiconductor material precise modeling method based on structured defect information, and relates to the technical field of ultra-wide forbidden band semiconductors, and the method comprises the steps: obtaining material structured defect information, and obtaining the lattice structure, forbidden band width, Raman spectrum, defect energy level, defect atomic percentage and the like of an experiment; normalizing the defect atom percentage to obtain the calculated defect atom molar concentration and the like; establishing an initial density functional theoretical model, and performing structural relaxation optimization processing to obtain a stable model; using a defect fitting algorithm of a hybrid hybridization functional and a defect quantum chemical correction factor to calculate the electron structure properties around atoms corresponding to the stable model, and when the electron structure properties are consistent with experimental structured defect information fitting, determining the model as an accurate ultra-wide forbidden band semiconductor material model at the moment. By means of the method, accurate digital modeling, material optimization growth and device optimization design reference of semiconductor materials adopted for actual device preparation can be achieved.

The invention provides a band-gap reference circuit and a chip, and the circuit comprises a voltage generation module which is used for generating a first voltage with a positive temperature coefficient and a second voltage with a negative temperature coefficient, and generating a reference voltage with a zero temperature coefficient according to the first voltage and the second voltage; and the load driving module is used for providing load driving capability for the voltage generation module so as to carry out driving buffering on a post-stage circuit. The whole circuit does not contain an operational amplifier clamp and can provide reference voltage with a zero temperature coefficient, so that the power consumption of the band-gap reference circuit is effectively reduced; meanwhile, the load driving module provides load driving capacity for the voltage generation module, so that the output reference voltage has the load driving capacity, and the problems that an existing band-gap reference circuit is high in power consumption and does not have the load driving capacity are solved.

The invention provides a single-mode 660nm semiconductor laser device with a superlattice structure and a preparation method of the single-mode 660nm semiconductor laser device, and belongs to the technical field of photoelectrons. The multi-quantum-well multi-quantum-well light-emitting diode sequentially comprises a GaAs substrate, a buffer layer, a sectional lower limiting layer, a lower waveguide layer, a multi-quantum-well active region, an AlInP / GaP superlattice, an upper waveguide layer, a sectional upper limiting layer, a band gap transition layer and a GaAs cap layer from bottom to top. The preparation method comprises the processes of substrate processing, buffer layer growth, V-group source switching, limiting layer and waveguide layer epitaxy, multi-quantum well and superlattice structure growth, cap layer deposition and the like. Through the segmented design of the superlattice structure and the limiting layer, the hole injection efficiency and the carrier limiting capability are improved, and the high-temperature working characteristic of the device is effectively improved. Stable output of single-mode laser in the 660nm wave band is achieved, reliable power output of 120mW can be kept in a high-temperature environment of 60 DEG C, and meanwhile, low loss, high conversion efficiency and excellent photoelectric performance are achieved.

The invention discloses a band-gap reference circuit and a calibration method, and the circuit comprises a reference core module which is used for outputting a band-gap reference voltage with first-order temperature compensation; the high-order compensation module is used for generating linear voltage in positive correlation with temperature, comparing the linear voltage with a plurality of reference voltages, generating high-order compensation current according to a comparison result, and compensating the band-gap reference voltage according to the high-order compensation current so as to generate reference output voltage with a zero temperature coefficient; and the reference signal generation module is used for outputting the plurality of reference voltages to the high-order compensation module according to the reference output voltage. According to the band-gap reference circuit provided by the embodiment of the invention, the high-order component in the band-gap reference voltage can be accurately quantified, so that the corresponding compensation current can be quantitatively generated to compensate the high-order temperature coefficient in the band-gap reference voltage, the influence of the temperature on the reference output voltage is effectively counteracted, and the stability and the accuracy of the circuit are improved.

The invention discloses a double-spiral type acoustic black hole vibration reduction structure which comprises two spiral line acoustic black holes, a transverse connecting rod and a damping layer. The spiral acoustic black hole comprises a plurality of conical units. And the thickness of each conical unit is gradually reduced by a power function in the direction from the head end to the tail end. The damping layer is arranged on the inner surface of the conical unit. Any two adjacent conical units are smoothly connected in a head end-head end or tail end-tail end mode, and the spiral line acoustic black hole with the periodically-variable diameter is constructed. And the spiral line acoustic black hole spirally extends around the central shaft. The two spiral line acoustic black holes have the same screw pitch and spiral radius, the center axes of the two spiral line acoustic black holes coincide, and the two spiral line acoustic black holes are arranged in a staggered mode along the center axes to form a parallel coiled double-spiral structure. And the plurality of transverse connecting rods are arranged on the central shaft at intervals so as to transversely connect the two spiral line acoustic black holes. According to the vibration reduction structure, the wave velocity regulation and control mechanism of the acoustic black hole and the band gap characteristic of the periodic structure are fused, and the more efficient and stable vibration reduction performance is achieved for multi-dimensional vibration.

The invention relates to the technical field of artificial intelligence and metamaterial research, in particular to a metamaterial reverse design method and system meeting multiple conditions. The invention provides a metamaterial reverse design method meeting multiple conditions, which comprises the following steps of: firstly, generating a metamaterial unit cell picture by using an initial variable combination randomly generated in a range, and then inputting the picture into a trained prediction model to obtain a dispersion graph and transmission loss data. And finally, substituting the prediction result into the fitness function, if the requirement is met, outputting the variable and the prediction result, otherwise, applying penalty to carry out iteration until the maximum number of iterations is reached. According to the invention, rapid design of the metamaterial is realized, the designed metamaterial has a wide band gap, and ideal target band gap and transmission loss conditions can be obtained; according to the invention, the deep learning model is utilized to meet the metamaterial reverse design of the required band gap and transmission loss conditions, and the multi-target performance requirement is met. According to the method, the problems that in the prior art, a traditional metamaterial design method depends on experience-driven iterative optimization and is limited by calculation efficiency, high-dimensional parameter space is difficult to efficiently explore, and complex multi-target performance requirements are difficult to meet are solved.

The invention provides a nitrogen-vacancy carbon nitride / indium oxide heterojunction photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of photocatalysts. The nitrogen vacancy carbon nitride is used as a framework of the catalyst, and the charge distribution of the carbon nitride can be adjusted by nitrogen vacancy defects, so that the carrier migration rate and the surface active site abundance are improved; the nitrogen vacancy also changes the charge recombination mode of the carbon nitride, the energy band structure of the carbon nitride is beneficially adjusted, the photovoltaic performance of the carbon nitride is improved, the visible light response range of the carbon nitride is widened, and the photocatalytic performance of the carbon nitride is remarkably improved; indium oxide is introduced to form a heterojunction with nitrogen vacancy carbon nitride, so that electron-hole recombination can be inhibited, a new electron transmission channel is generated, and the carrier transmission rate is increased; the band gap characteristic of indium oxide is consistent with the band gap characteristic of nitrogen vacancy carbon nitride, so that the photocurrent response intensity of the catalyst can be improved, the charge transfer resistance is reduced, and the photocatalytic performance is synergistically enhanced.

The invention discloses a tunable band elimination filter based on a quantum well structure photon time crystal and a method. The tunable band elimination filter comprises the quantum well structure photon time crystal; the quantum well structure photon time crystal comprises a first photon time crystal section, a time domain quantum well section and a second photon time crystal section which are connected in sequence; when an electromagnetic signal is propagated, the electromagnetic signal sequentially passes through the first photon time crystal section, the time domain quantum well section and the second photon time crystal section, so that a stable band gap region and a controllable resonance response are formed in a momentum space; a fitting relation between a local state equivalent wave vector and a time structure parameter is established by adjusting a time section proportion parameter and a refractive index contrast ratio in a quantum well structure photon time crystal, so that the local state quantity and momentum position of an electromagnetic signal are regulated and controlled; and frequency spectrum regulation of the electromagnetic signal is realized through a corresponding relation between the momentum space and the frequency domain space. The frequency spectrum regulation and control precision and the system stability are improved.

The invention provides a band-gap reference circuit, a current compensation method and a reference power supply. The band-gap reference circuit comprises a first triode module, a second triode module, a first resistor module, a second resistor module, a first compensation branch and a second compensation branch, the first compensation branch generates first compensation current, and the first compensation current compensates first current flowing into a third end of the first triode module from a first end of the first triode module. The first compensation current is equal to the first current. The second compensation branch generates second compensation current, the second compensation current compensates second current flowing into the third end of the second triode module from the first end of the second triode module, and the second compensation current is equal to the second current. The problems that the precision of the reference voltage output by the band-gap reference circuit is reduced, the temperature drift is increased, and the stability and reliability of the reference voltage are seriously influenced due to the fact that an existing band-gap reference circuit cannot guarantee accurate matching of collector currents of two branches of BJTs are solved.

The present application discloses a flash memory, wherein a gate dielectric layer of a storage transistor comprises a tunneling dielectric layer, a storage dielectric layer, and a barrier dielectric layer stacked in sequence. The storage dielectric layer includes a first silicon nitride layer, a second interface layer, and a third silicon nitride layer stacked in sequence. The material for the second interface layer is silicon oxynitride. With the storage transistor in a programming state, programming electrons are stored in the defect of the first silicon nitride layer and the defect of the third silicon nitride layer, and the outflow of the programming electrons out of the storage dielectric layer is reduced by means of the feature that the width of band gap of silicon oxynitride is greater than that of silicon nitride. The present application also discloses a method of making a flash memory.

The application discloses a DC-DC converter circuit based on over-temperature protection threshold adjustment, and an over-temperature detection module comprises: a first transistor circuit, the base of the transistor is connected with the reference voltage VBG output end of a band gap reference module, a positive temperature coefficient voltage proportional to absolute temperature is generated; a voltage dividing circuit input end is connected with the positive temperature coefficient voltage output end, the positive temperature coefficient voltage is divided to generate a detection voltage; a second transistor circuit, the base of the transistor is connected with the detection voltage output end, an over-temperature protection signal OTP is output to shut down the main circuit of the converter; an adjustment resistance circuit receives a digital adjustment signal; the digital adjustment signal changes the voltage dividing ratio of the positive temperature coefficient voltage divided to the detection voltage by controlling the equivalent resistance value of the adjustment resistance circuit; the change direction of the voltage dividing ratio is opposite to the change direction of the reference voltage VBG caused by adjustment. The application significantly improves the accuracy, consistency and overall reliability of the over-temperature protection threshold.

The application relates to the fields of material preparation technology and radio frequency devices, in particular to a thin film substrate structure and an acoustic filter. The thin film substrate structure comprises a supporting substrate, an interface layer, an insulating layer and a functional layer; the supporting substrate has opposite first and second surfaces, and the interface layer is located on the second surface; the insulating layer is located on the side surface of the interface layer away from the supporting substrate; the functional layer is located on the side surface of the insulating layer away from the supporting substrate; and the interface layer has at least one of a deep energy level defect and a preset band gap width. The application plays a pinning effect on the Fermi level of the device by the interface layer having at least one of a deep energy level defect and a preset band gap width. The surface local conductance effect of the supporting substrate when working at a high frequency is effectively inhibited, the generation of high-order harmonics is inhibited, and the linearity of the device is optimized.