1751 results about "Band gap" patented technology

The invention belongs to the technical field of perovskite solar cells, and provides synthesis and application of a novel self-assembled monomolecular hole transport material with conjugated extended tail ends. According to the self-assembled monomolecular hole transport material, a carbazole group is used as a terminal core, an aromatic ring is introduced to the terminal of carbazole to extend a conjugated structure, an alkyl chain is used as a connecting unit, phosphoric acid or acetic acid is used as an anchoring group, and the self-assembled monomolecular hole transport material with conjugated extended terminal is formed. And the stability, the hole transport property, the hole extraction capability and the interface passivation capability of the material are improved. Experiments show that the self-assembled monomolecular hole transport material has an HOMO energy level matched with a perovskite layer, and hole transport is facilitated. When the self-assembled monomolecular hole transport material disclosed by the invention is applied to a trans-perovskite solar cell with a band gap of 1.53 eV, the photoelectric conversion efficiency as high as 26.11% is obtained, and excellent device stability is shown.

------ Acoustic Enclosure and Method for Leveling an Acoustic Enclosure The present invention relates to an acoustic enclosure (20) comprising a loudspeaker (21) mounted flush on a front face of the enclosure (20), characterized in that at least one Helmholtz resonator (26) is formed on the front face of the enclosure (20) between each lateral edge of the front face and the loudspeaker (21), the at least one Helmholtz resonator (26) being dimensioned to have a band gap to block the propagation, in the plane of the front face of the enclosure (20), of acoustic waves in the useful frequency band of the loudspeaker (21). Figure to be published with the abstract: Figure 6a

The invention discloses a household nano self-cleaning material containing rare earth elements and a preparation method of the household nano self-cleaning material, and aims at solving the problems that a traditional self-cleaning material is narrow in light response range, single in function, poor in durability, non-environment-friendly in preparation process and the like. The material comprises 5-15 parts of rare earth oxide, 50-70 parts of nano titanium dioxide, 10-20 parts of mesoporous silica, 3-8 parts of a fluorinated modifier and 2-5 parts of a bio-based adhesive. Wherein the rare earth elements are doped in titanium dioxide crystal lattices, so that the forbidden band width is reduced, the photocatalytic response range is widened to visible light, and the photocatalytic efficiency is remarkably improved. The preparation method of the material comprises the steps of precursor preparation, hydrothermal reaction, fluorination modification and coating forming, a low-temperature hydrothermal method, supercritical CO2 modification and a photocuring technology are adopted, and the material has the functions of self-cleaning, antibiosis and VOCs degradation, is suitable for various base materials such as household building materials, textiles and electric appliance surfaces, meets the composite requirements of modern home for health and environmental protection, and has wide application prospects. And the preparation process is green and pollution-free, and conforms to the sustainable development concept.

The invention provides a topological polygonal laser. According to the device, a topological non-trivial domain formed by two-dimensional gyromagnetic photonic crystals is combined with a trivial domain, and an out-of-plane magnetic field externally applied to a sublattice A is started to open an energy band gap, so that a multi-position angular state is realized. The two-dimensional gyromagnetic photonic crystal opens or closes an out-of-plane magnetic field externally applied to the sub-lattice A so as to realize opening and closing of the angular state of the topological angular state laser. The topological multi-angular-state laser is realized by taking the two-dimensional gyromagnetic photonic crystal as a platform, and the topological multi-angular-state laser has the advantages that switching of angular states can be realized without changing the structure, and the laser is topologically protected and has topological robustness.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses an ultrahigh-precision low-noise band-gap reference circuit, and relates to the technical field of integrated circuit design, the ultrahigh-precision low-noise band-gap reference circuit comprises a starting turn-off circuit, a reference core circuit, a high-order temperature compensation circuit and a digital trimming circuit, the starting turn-off circuit is connected with the reference core circuit, and the high-order temperature compensation circuit is connected with the digital trimming circuit through a Brokaw type band-gap reference topological structure. Accurate compensation of the voltage is achieved through deep negative feedback of the operational amplifier and a high-order temperature compensation circuit, and the temperature drift of the reference voltage is as low as 0.5-2 ppm / DEG C (-40 DEG C to 130 DEG C) and is increased by 5-10 times compared with a traditional band-gap reference (5-10 ppm / DEG C). The power consumption of the system can be saved by turning off the circuit when the circuit is not used, meanwhile, the digital trimming module is added to replace laser trimming in traditional engineering, the upper limit of the trimming range is improved, high-order temperature compensation and the digital trimming circuit are introduced, the precision of output voltage is improved, different devices are replaced, and the noise of the circuit is reduced. The problems that a traditional high-voltage band-gap reference temperature coefficient is high and noise is large are solved.

A nitride semiconductor device includes a semiconductor layered structure including a substrate, a channel layer, and a barrier layer. The channel layer is formed above the substrate and made of a nitride semiconductor layer. The barrier layer is formed on the channel layer, has a wider band gap than the channel layer, and is made of a nitride semiconductor layer. The semiconductor layered structure includes an isolation region in which impurities are implanted. The position of an impurity concentration peak in the depth direction in the isolation region is deeper than the interface between the barrier layer and the channel layer. The concentration of the impurities at the interface between the barrier layer and the channel layer in the isolation region is lower than the concentration at the impurity concentration peak.

A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer, a first electrode provided on the second nitride semiconductor layer, a second electrode provided on the second nitride semiconductor layer, a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in connect with the second nitride semiconductor layer and including a first insulating material, a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, on the first insulating film, and on the second nitride semiconductor layer between the first insulating film and the second electrode, the second insulating film including a second insulating material, a third electrode provided on the second insulating film between the first electrode and the first insulating film, and a fourth electrode including a first electrode portion and a second electrode portion, the first electrode portion being provided on the second insulating film between the third electrode and the first insulating film, and the second electrode portion being provided on the second insulating film on the first insulating film and being electrically connected to the first electrode portion.

The invention belongs to the technical field of photovoltaic solar materials, and particularly relates to a high-conversion-efficiency perovskite precursor material and a preparation method thereof. The high-conversion-efficiency perovskite precursor material is composed of phenyl ammonium cesium composite cations, metal halide, an additive, a nuclear auxiliary agent and a solvent. By compounding phenylethyl ammonium iodide and cesium iodide, phenylammonium and cesium cations are introduced into perovskite crystal lattices, organic-inorganic balance of the material is optimized, phenylammonium promotes formation of a quasi-two-dimensional structure, and damp-heat stability is enhanced; cesium ions fill A-site gaps, so that crystal lattices are tighter, and the thermal stability and the photoelectric conversion efficiency are improved; the synergistic matching addition of the metal halide realizes band gap regulation and control and spectrum matching, and quaternary ammonium salt adjusts nucleation and grain growth, so that a uniform film structure is ensured, and defects are reduced; and guanidine salt passivates defects after crystal growth, stabilizes crystal lattices, and improves charge life and device efficiency.

The application relates to a high-order curvature compensation band gap reference circuit, which comprises a first-order band gap reference circuit, a high-temperature region curvature compensation circuit and a starting circuit. The first-order band gap reference voltage is realized by the following technologies: the voltage generated by the current of PMOS tube M4 on resistors R3-R4 and the voltage generated by the current of PMOS tube M6 on resistor R4 both have positive temperature coefficients, the voltage generated by the current of PMOS tube M5 on resistors R3-R4 and the voltage generated by the current of PMOS tube M7 on resistor R4 both have negative temperature coefficients; the working area of NMOS tube M13 gradually changes from the deep triode region, the triode region to the saturation region with the increase of temperature by controlling the working of NMOS tube M13 by the technology that the gate voltage of NMOS tube M12 increases with the increase of temperature, so that the current of PMOS tube M14 is high-order nonlinear with temperature, and the first-order band gap reference voltage is temperature compensated, thereby obtaining the high-order temperature compensation band gap voltage.

The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source circuit with high-order compensation, which comprises a PTAT (proportional to absolute temperature) generation circuit, a high-order compensation circuit and a pre-voltage-stabilizing circuit, wherein the PTAT generation circuit generates PTAT current, and the high-order compensation circuit performs second-order compensation on the PTAT current; the pre-voltage-stabilizing circuit is used for driving the PTAT generation circuit and the high-order compensation circuit and comprises a starting circuit, a positive feedback loop and a negative feedback loop; the gain of the positive feedback loop is lower than that of the negative feedback loop; according to the band-gap reference voltage source circuit, the temperature coefficient and the power supply rejection ratio of the circuit are remarkably optimized by integrating high-order temperature compensation, a pre-adjusting power supply and a high-gain feedback loop, and the designed band-gap reference voltage source circuit has the advantages of being extremely low in temperature drift and high in precision.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

The invention relates to the technical field of acoustic function material structure design, in particular to a Kresling origami-based local resonance phononic crystal, which comprises a substrate and a vibration reduction array embedded on the substrate, the vibration reduction array comprises a plurality of unit cell structures arranged in an array. Each unit cell structure comprises at least two spiral Kresling paper folding structures, and lead injection holes penetrating through the Kresling paper folding structures are formed in the Kresling paper folding structures. The substrate is one of an Archimedes spiral parallel plate, a chessboard embedded paper-cut, a double-layer Miura origami or a bistable shell based on a shape memory polymer; the material of the Kresling origami structure is lead, the density is 11600 kg / m < 3 >, the elastic modulus is 20.80 GPa, and the Poisson ratio is 0.369. According to the local resonance photonic crystal provided by the invention, through the unique geometric characteristics, a remarkable vibration band gap is generated in a low-frequency band, and vibration propagation in a specific frequency band is effectively inhibited; according to the Kresling paper folding structure, diversified vibration band gap configuration can be achieved by adjusting the folding angle and the number of layers.

The invention discloses a preparation method of a triazinyl covalent organic framework (COF) material and application of the triazinyl covalent organic framework material in photocatalytic production of hydrogen peroxide. The amino starting monomer is regulated and controlled through a side chain regulation and control strategy to obtain the COF with a functional group, and the COF can be connected into a ring by thienopyridine through post-modification to replace an original imine bond, so that the planarity and the conjugation degree of the COF are obviously improved, and the COF has good light absorption capacity and a proper band gap; therefore, the COFs photocatalyst has excellent photocatalytic hydrogen peroxide production capacity in a water-benzyl alcohol system under a light source, and a beneficial thought can be provided for designing a high-performance COFs photocatalyst.

The invention provides a gallium nitride-based light emitting diode epitaxial structure, a preparation method thereof and an LED chip. In the epitaxial structure, a multi-stage electron-phonon scattering structure is designed for the situations of electron acceleration and hot electron transition caused by electron ballistic transport and a quantum stark effect structure in a quantum well, the forbidden band width of a quantum well layer in a multi-quantum well barrier layer is gradually increased, and an InGaN step structure is used for inhibiting electron leakage under different situations, so that the quantum efficiency is improved. And the external quantum efficiency under large current is effectively improved.

A method for manufacturing a semiconductor structure includes: forming a gate electrode; forming a gate dielectric layer over the gate electrode; forming a channel over the gate dielectric layer opposite to the gate electrode, the channel including a semiconductor material; forming a first confinement layer on the channel opposite to the gate electrode, an energy band gap of the first confinement layer being greater than an energy band gap of the channel; and forming a drain electrode and a source electrode which are connected to the channel, the drain electrode and the source electrode being spaced apart from each other and each including an electrically conductive material.

The invention discloses an ultra-narrow band gap electron acceptor which is represented by a formula (I) and takes a phenazine structure as a core, a preparation method of the electron acceptor and application of the electron acceptor in an organic solar cell. The phenazine derivative ultra-narrow band gap receptor provided by the invention has an extremely low film optical band gap (-1.2 eV). The organic solar cell prepared by matching with a narrow-band gap polymer donor PTB7-Th as an active layer has high energy conversion efficiency and short-circuit current. In addition, the transparent organic solar cell prepared from the active layer obtains higher energy conversion efficiency on the premise of maintaining higher average visible light transmittance. The phenazine derivative ultra-narrow band gap receptor prepared by the invention has a huge application prospect in the field of transparent organic solar cells. # imgabs0 #

The utility model provides a local resonance type phononic crystal primitive cell which comprises a silicon rubber base body serving as an outer ring, a steel scatterer is arranged in an inner cavity of the silicon rubber base body, and the steel scatterer and the silicon rubber base body are connected and fixed through a soft material wrapping layer. The four spring mass subsystems are nested in the steel scattering body; a soft material wrapping layer is arranged on the side wall of the inner cavity of the silicone rubber base body. According to the utility model, a plurality of complete and directional band gaps in a low-frequency range can be effectively formed, and low-frequency elastic waves are effectively inhibited; the hollow and height difference design is adopted among the external silicon rubber base body, the steel scatterer and the spring mass subsystem, so that the vibration damping material has a sufficient deformation space to play a vibration damping role; the steel scatterer, the spring mass subsystem and other structures ensure that the anti-vibration pad has an enough supporting effect, band gap regulation and control of the local resonance type photonic crystal can be effectively achieved through material selection flexibility, and low-frequency vibration control of different frequency bands is achieved.

A method of forming a device comprises forming sacrificial pillar structures over conductive structures overlying a barrier structure substantially impermeable to hydrogen. The sacrificial pillar structures are separated from one another by trenches linearly extending in a first lateral direction orthogonal to a second lateral direction in which the conductive structures linearly extend. Gate electrodes are formed within the trenches and laterally adjacent sidewalls of the sacrificial pillar structures. The sacrificial pillar structures are removed to form openings between the gate electrodes. Dielectric liner structures are formed within the openings and laterally adjacent sidewalls of the gate electrodes. Channel structures are formed within the openings after forming the dielectric liner structures. The channel structures comprise a semiconductive material having a band gap larger than that of polycrystalline silicon. Conductive contacts are formed on the channel structures. A device, a memory device, and an electronic system are also described.

The invention provides a method for analyzing femtosecond laser-induced damage behaviors on the surface of a Zn-doped KDP crystal, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively analyzing the influence of the Zn doping amount on the band gap and electroacoustic coupling of the KDP crystal through an ultraviolet-visible absorption spectrum and a Brillouin light scattering spectrum; then constructing a one-dimensional model, respectively simulating the electron density, lattice temperature and time evolution of electron temperature on the surface of the Zn-doped KDP crystal under femtosecond laser irradiation through an electron density accumulation rate equation and a double-temperature model, and theoretically analyzing the influence of the Zn doping amount on the damage behavior of the surface of the KDP crystal. And a theoretical model for calculating the femtosecond laser induced damage threshold is established, so that the optimal doping amount of Zn is determined in a lossless manner. A real sample is not contacted, so that the sample utilization rate is improved; the simulation process is more stable and controllable, and the data repeatability is high; and the research period can be shortened, and optimal doping amount screening is accelerated.

The invention provides an artificial intelligence grading classification-regression combination prediction method for multi-class materials, and belongs to the technical field of material informatics and artificial intelligence. According to the method, a historical sample data set of material chemical composition and crystal structure information is obtained, a band gap value is divided into a plurality of intervals based on an equal width principle, and interval labels are generated. Key features are extracted, an SVM classification model is trained to predict a band gap interval, and then a multi-layer neural network regression model is utilized to predict a band gap value. If the highest confidence coefficient is higher than the threshold value, directly calling the multi-layer neural network regression model of the corresponding interval; and if the value is lower than the threshold value, multi-interval parallel regression and weighted fusion prediction are carried out. According to the artificial intelligence grading classification-regression combination prediction method for the multi-class materials, the precision and robustness of band gap prediction can be effectively improved, particularly, the performance is prominent when high and low band gap samples are distributed imbalanced, and a precise and reliable solution is provided for material band gap prediction.

The embodiment of the invention provides a voltage monitoring circuit of a DLL module and a DRAM. The voltage monitoring circuit comprises a voltage division module, a voltage sampling module and a comparison module, the voltage division module is configured to generate N different reference voltages after dividing the reference band gap voltage; the voltage sampling module is configured to collect the working voltage of the DLL module; and the comparison module is configured to compare the relationship between the N different reference voltages and the working voltage and generate a level signal so as to determine a voltage interval to which the working voltage of the DLL module belongs according to the level signal. When a DRAM read-write error occurs, whether the DRAM read-write error occurs due to the fact that the working voltage of the DLL module is too low or not is determined according to the voltage interval in which the working voltage of the DLL module is located when the DLL module is in the working state.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

Embodiments of the present invention advantageously provide a method of manufacturing a semiconductor device having multiple threshold voltage capability in a scaled space between nanosheets in an advanced GAA node. One or more embodiments provide an integration scheme to advantageously reduce gate resistance by incorporating n- / p-dipoles with an intermediate bandgap metal with low resistance to achieve a desired work function and low resistance metal gate. In one or more embodiments, the intermediate bandgap metal is used to fill the nanosheets and as a liner for subsequent filling with the low resistance metal. After dipole processing, instead of filling surrounding gate nanosheets with conventional n or p metals, in one or more embodiments, the nanosheets are advantageously filled with a single work function intermediate energy gap metal to achieve n and p work functions. If the work function is shifted in either of the band edges of the P-dipole or the N-dipole after dipole processing, the intermediate bandgap material may also shift the band edges in the opposite manner.

The invention relates to a piezoelectric metamaterial self-adaptive vibration suppression method based on deep learning reverse design. The piezoelectric metamaterial self-adaptive vibration suppression method comprises the steps that a nonlinear digital piezoelectric metamaterial is acquired, and a circuit parameter and vibration response signal data set of the metamaterial is acquired; wherein the circuit parameter and vibration response signal data set comprises a circuit parameter vector and a band gap tag vector of the nonlinear digital piezoelectric metamaterial; constructing a reverse design network model based on deep learning; training a reverse design network model based on deep learning according to the circuit parameters and the vibration response signal data set; and obtaining circuit parameters of the nonlinear digital piezoelectric metamaterial. According to the piezoelectric metamaterial, a nonlinear shunt circuit with programmability is formed by a single chip microcomputer, a deep learning neural network is combined, corresponding circuit parameters can be accurately and automatically designed according to expected vibration suppression response, the vibration suppression flexibility, the self-adaptive capacity and the design efficiency are improved, and the application range is wide. And a good vibration suppression effect is shown.

The invention relates to the technical field of rotary mechanical vibration control, in particular to a quasi-zero stiffness annular superstructure device and a sea water pump composite vibration isolation system.The quasi-zero stiffness annular superstructure device comprises an inner ring and an outer ring, and the inner ring and the outer ring are connected through a plurality of quasi-zero stiffness one-dimensional structures; the quasi-zero stiffness one-dimensional structure is formed by sequentially arraying a plurality of groups of quasi-zero stiffness cell structures from top to bottom, a gap is formed between every two adjacent groups of quasi-zero stiffness cell structures, the left side and the right side of each gap are respectively provided with a group of cantilever beams, and the tail ends of the cantilever beams are respectively and fixedly provided with mass blocks with different masses so as to generate a local resonance band gap; piezoelectric patches are pasted on the inclined side wall of the quasi-zero-stiffness one-dimensional structure, a shunt circuit is connected, and a band gap is adjusted through the circuit. Compared with the prior art, multiple band gaps can be generated at low frequency on the basis that the bearing capacity is guaranteed, and low-frequency broadband vibration control over the rotating machine is achieved.

The invention discloses a low-power-consumption low-temperature-drift band-gap reference voltage source which comprises a VBE nonlinear term compensation circuit and an output voltage generation circuit, the VBE nonlinear term compensation circuit is matched with a bipolar transistor through an MOS tube current mirror image, the nonlinear temperature drift of output voltage is compensated, linearized VBE voltage is generated, and the output voltage generation circuit is connected with the VBE nonlinear term compensation circuit. And the output voltage generation circuit generates a voltage in direct proportion to absolute temperature through a differential pair structure, superposes the voltage with the linearized VBE voltage, and outputs a reference voltage. According to the low-power-consumption low-temperature-drift band-gap reference voltage source, temperature drift is compensated through the VBE nonlinear term compensation circuit, the output voltage generation circuit integrates signals to generate initial stable reference voltage, the temperature drift coefficient trimming circuit finely adjusts the temperature drift coefficient, and finally the reference voltage which is high in precision, low in temperature drift and good in consistency is output.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention belongs to the technical field related to structure optimization design, and discloses a topological optimization method and device for a metamaterial microstructure capable of bearing a band gap, and the method comprises the steps: (1) respectively defining an interpolation penalty coefficient of a Young modulus for the homogenization analysis of the microstructure and the band gap problem of an energy band structure according to the performance analysis of the microstructure, calculating an interpolation penalty coefficient of the mass density; (2) carrying out homogenization analysis of the microstructure based on dynamics to obtain equivalent physical property parameters and determine equivalent material modulus; (3) defining an irreducible first Brillouin region wave vector path of the microstructure based on the geometric symmetry constraint of the microstructure, and further calculating a band gap quality factor between adjacent energy band curves of the microstructure; and (4) establishing a topological optimization model which takes the equivalent modulus as a grading constraint and takes band gap quality factor maximization as a target, and performing iterative optimization based on the topological optimization model to obtain an optimal microstructure configuration. According to the invention, efficient and stable design of the microstructure is realized.

The invention provides an electro-optical modulator based on a slow light effect. The electro-optical modulator comprises a substrate, a bottom electrode, an insulating layer, a slow light waveguide layer, an upper cladding and a signal electrode which are sequentially stacked from bottom to top. Wherein the slow light waveguide layer is a photonic crystal waveguide based on Z-cut film lithium niobate, the photonic crystal waveguide comprises a line defect waveguide and a plurality of air holes arranged in a triangular lattice structure, and the plurality of air holes are symmetrically arranged at two sides of the line defect waveguide. A photonic band gap is formed by a two-dimensional periodic optical medium structure formed by combining air holes arranged in a triangular lattice structure and Z-cut film lithium niobate, the slow light effect is achieved, and light waves in a specific frequency range can only be spread along a line defect waveguide by introducing the line defect waveguide. According to the invention, the interaction between the light field and the electric field is enhanced, the modulation efficiency and performance of the electro-optical modulator can be remarkably improved, and the development trend of miniaturization, integration and high speed of an existing communication network is met.