377 results about "Quantum well" patented technology

The invention provides a distributed feedback laser with a double-layer grating structure, and relates to the technical field of lasers, the laser forms an InGaAlAs multi-quantum well active region, an upper sampling grating layer and a lower phase shift grating layer on an n-type InP substrate in sequence, the upper grating layer is designed based on a reconstruction equivalent chirp technology, and the lower phase shift grating layer is designed based on a reconstruction equivalent chirp technology. Two sections of asymmetric modulation areas with sampling periods linearly gradually changing in opposite directions are arranged in the axial direction of the resonant cavity, and the lower grating layer is a quarter-wave phase shift grating matched with the period of the upper seed grating. Through the synergistic effect of equivalent phase modulation and phase shift generated by the double-layer grating, the photon density distribution in the cavity can be improved, the longitudinal space hole burning effect can be weakened, the sensitivity to end face phase fluctuation can be reduced, high single-mode power and large modulation bandwidth can be realized in a wide temperature range, and the double-layer grating is suitable for a high-speed optical communication and coarse wavelength division multiplexing transmission system.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

The invention provides a heterojunction quantum well and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming a heterojunction quantum well at one side of the substrate through a chemical vapor deposition method; the heterojunction quantum well comprises a first barrier layer, a quantum well layer and a second barrier layer which are stacked in sequence, the first barrier layer is located between the quantum well layer and the substrate, the first barrier layer and the second barrier layer are both made of germanium-silicon, when the heterojunction quantum well is a silicon heterojunction quantum well, the quantum well layer is a silicon quantum well layer, and when the heterojunction quantum well is a silicon quantum well layer, the second barrier layer is a silicon quantum well layer. When the heterojunction quantum well is a germanium heterojunction quantum well, the quantum well layer is a germanium quantum well layer; in the process of forming the heterojunction quantum well, the precursor is decomposed in a target temperature range, and a product obtained through decomposition is deposited on one side of the substrate to obtain the heterojunction quantum well; the precursor is subjected to multi-stage reaction during decomposition, and the target temperature range is 300-550 DEG C; the interface quality of the heterojunction quantum well can be greatly improved, the surface roughness of the film layer can be reduced, and high-quality preparation of the heterojunction quantum well is realized.

The invention discloses a graphene integrated electrode LED epitaxial structure and a chip preparation method. The epitaxial structure sequentially comprises a GaAs substrate, an n-type GaAs buffer layer, an n-type limiting layer, a non-doped quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type GaP ohmic contact layer from bottom to top. The preparation method comprises the steps of epitaxial structure growth, p-type ITO transparent conductive layer preparation, bonding and substrate removal, mesa structure preparation, passivation isolation, graphene interconnection layer preparation and n-type electrode preparation. Graphene is used for replacing a traditional n-type GaAs ohmic contact layer and an ITO electrode, the problems of poor red light absorption, poor heat dissipation and mechanical brittleness of a traditional structure are solved, the red light transmittance of the chip is improved, the junction temperature under 3 currents is greatly reduced, the chip can bear tensile strain larger than 20%, the chip is suitable for flexible scenes, and the chip is suitable for high-performance large-scale production of red light Micro LEDs.

The invention discloses a semiconductor laser and a preparation method thereof, which can be used in the field of semiconductor device preparation, and the method comprises the steps: firstly, providing a first conductive type substrate; then, epitaxially growing a buffer layer of a first conduction type, a lower optical waveguide limiting layer, a quantum well active light-emitting layer, an upper optical waveguide limiting layer, a corrosion barrier layer, a current injection layer and an intrinsic ohmic contact layer on the substrate in sequence to obtain a multi-layer epitaxial layer; then, etching the multi-layer epitaxial layer to the corrosion barrier layer based on a preset pattern to form a ridge-shaped table which starts from the intrinsic ohmic contact layer and is deeply cut off to the corrosion barrier layer; and finally, performing particle doping in a region corresponding to the ridge-shaped table, and converting one sides, close to the corrosion barrier layer, of the intrinsic ohmic contact layer, the current injection layer, the corrosion barrier layer and the upper optical waveguide limiting layer into a second conduction type. Therefore, current limitation can be realized without performing multiple epitaxy like a traditional buried heterojunction, and the production cost and the process difficulty are greatly reduced.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

The invention relates to an anti-radiation five-junction solar cell and a preparation method thereof, and belongs to the technical field of semiconductor devices. The radiation-proof five-junction solar cell comprises a substrate, and a first buffer layer, a first component order change buffer layer, a fourth sub-cell, a second component order change buffer layer, a fourth tunnel junction, a fifth sub-cell and an electrode contact layer which are sequentially stacked on a first surface of the substrate, a second buffer layer, a third tunnel junction, a third sub-cell, a second tunnel junction, a second sub-cell, a first tunnel junction, a first sub-cell and a cap layer are sequentially stacked on the second surface of the substrate; and the base region thicknesses of the second sub-cell, the third sub-cell and the fourth sub-cell are smaller than the respective emitter region thicknesses. The anti-radiation five-junction solar cell comprises a plurality of sub-cells with quantum well structures, so that the anti-radiation performance of the solar cell can be effectively improved, and the last-stage use efficiency of the solar cell is further remarkably improved.

The invention provides a high-stability single-mode semiconductor laser based on dynamic wavefront shaping and a control system, and relates to the technical field of semiconductor lasers, comprising a semiconductor laser gain module, a dynamic wavefront shaping module, a single-mode screening module and a laser output module which are optically coupled in sequence, wherein the semiconductor laser gain module is composed of a quantum well structure gain chip, a distributed feedback grating and a surface plasma structure are integrated on the surface of an active area of the gain chip, and the distributed feedback grating and the surface plasma structure are combined on the surface of the active area through a surface etching process. According to the invention, through the dynamic wavefront shaping module and the multi-parameter closed-loop control system, real-time adaptive regulation and control of the whole laser output process are realized. According to the system, wavefront distortion can be rapidly detected and compensated in a complex disturbance environment, and response delay and manual intervention of traditional static correction are remarkably reduced.

A laser diode includes an active region, confinement layers, and cladding layers. The active region includes one or more active layers that each exert a first strain in a first direction and one or more strain compensating layer that each exert a second strain in a second direction that is opposite the first direction. The confinement layers bound the active region. The cladding layers bound the confinement layers. In some embodiments, each active layer comprises InAs quantum dots in a InrGa1-rAs quantum well, where 0≤r≤1; and each strain compensating layer comprises a GaAs1-sPs layer, where 0<s≤1. The confinement layers may each comprise a (AlzGa1-z)wIn1-wP layer, where 0<w<1 and 0≤z<1. The cladding layers may each comprise a (AlyGa1-y)xIn1-xP layer, where 0<x<1 and 0≤y<1.

The invention is suitable for the technical field of semiconductor LED display, and provides a high-color-gamut LED chip structure and a preparation method thereof. The high-color-gamut LED chip structure comprises a substrate material, a buffer layer, a first semiconductor layer, a green wave quantum well layer, an electron hole adjusting layer, a blue wave quantum well layer, a second semiconductor layer, a current blocking layer and a current expansion layer which are sequentially arranged from bottom to top, and further comprises a first metal electrode layer, a second metal electrode layer and a transparent insulating layer. The electron hole adjusting layer is used for controlling the distribution of electrons and holes in the green wave quantum well layer and the blue wave quantum well layer so as to adjust the wavelength and the spectral intensity of emergent light of the green wave quantum well layer; through introduction of the electron hole adjusting layer, the wavelength of a long wave and the corresponding spectral intensity can be effectively controlled, two wavelengths can be emitted from a single chip, and through introduction of double waves, the color gamut of a display screen can be improved.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The invention discloses a three-dimensional asymmetric photonic crystal laser and a preparation method thereof. An epitaxial structure of the three-dimensional asymmetric photonic crystal laser comprises an N-type electrode, an N-type InP substrate, an N-type Al < x > < 1 > In < 1-x > < 1 > As upper limiting layer, a quantum well active region, a P-type Al < y > < 1 > In < 1-y > < 1 > As electron barrier layer, a P-type Ga < z > < 1 > In < 1-z > < 1 > Asz < 2 > P < 1-z > 2 functional layer, a P-type Al < x > < 2 > In < 1-x > < 2 > As lower limiting layer, a P-type InP connecting layer, a bottom insulating layer and a P-type electrode, wherein a three-dimensional asymmetric photonic crystal is etched on the P-type GaInAsP functional layer, and a chiral characteristic is introduced by destroying the symmetry of the photonic crystal, so that the P-type GaInAsP functional layer vertically emits a single-mode light beam with left-handed or right-handed circular polarization. By designing an asymmetric photonic crystal structure, efficient output of circularly polarized light beams is achieved, polarization selectivity and light beam quality are remarkably improved, and the advantages of low divergence angle and high light beam stability are achieved.

Disclosed in the present invention are a light-emitting diode and a light-emitting device. The light-emitting diode comprises a semiconductor epitaxial stack, which has a first surface and a second surface opposite to each other, and comprises, in a direction from the first surface to the second surface, a first-type semiconductor layer, an active layer and a second-type semiconductor layer that are stacked in sequence. The active layer comprises n periods of quantum well structure, and each period of quantum well structure comprises a well layer and a barrier layer deposited in sequence. A first spacer layer is disposed between the first-type semiconductor layer and the active layer, and the ratio of the thickness (nm) of the first spacer layer to the current density (A / cm2) of the light-emitting diode ranges from 0 to 10. In the present invention, adjusting the thickness of the first spacer layer on the basis of the current density of the light-emitting diode can improve the luminous efficiency of the light-emitting diode.

The invention discloses a tunable band elimination filter based on a quantum well structure photon time crystal and a method. The tunable band elimination filter comprises the quantum well structure photon time crystal; the quantum well structure photon time crystal comprises a first photon time crystal section, a time domain quantum well section and a second photon time crystal section which are connected in sequence; when an electromagnetic signal is propagated, the electromagnetic signal sequentially passes through the first photon time crystal section, the time domain quantum well section and the second photon time crystal section, so that a stable band gap region and a controllable resonance response are formed in a momentum space; a fitting relation between a local state equivalent wave vector and a time structure parameter is established by adjusting a time section proportion parameter and a refractive index contrast ratio in a quantum well structure photon time crystal, so that the local state quantity and momentum position of an electromagnetic signal are regulated and controlled; and frequency spectrum regulation of the electromagnetic signal is realized through a corresponding relation between the momentum space and the frequency domain space. The frequency spectrum regulation and control precision and the system stability are improved.

This invention provides a hybrid ultraviolet and visible light source and its fabrication method. The method includes the following steps: providing a substrate, the substrate including a first region and a second region, the second region surrounding the first region; using a first mask to block the second region, and forming a first ohmic layer and a first N-type layer in the first region; using third, fourth, and fifth masks to form first, second, and third monochromatic light-emitting quantum well layers on the surface of the first N-type layer, respectively; using a second mask to form a first P-type layer, forming a white light source stacked structure; using a sixth mask to block the first region and forming an ultraviolet light source stacked structure in the second region; and simultaneously forming electrodes in both the white light source region and the ultraviolet light source region. The white light source for illumination proposed in the above technical solution does not contain phosphors or light-emitting quantum dots, and can extend its lifespan and reduce energy consumption when used in conjunction with an ultraviolet light source.

The disclosure provides a laser, a preparation method of the laser and an optical module, and relates to the technical field of optical elements, so as to meet the demand of the optical module for high-power lasers. The laser comprises the following steps: growing an etching auxiliary layer on the surface of a wafer body of the laser, the longitudinal etching rate of the wafer body is greater than the transverse etching rate of the wafer body, the transverse etching rate of the etching auxiliary layer is greater than the transverse etching rate of the wafer body, and the wafer body comprises a quantum well layer; forming a mask layer above the etching auxiliary layer, and pre-treating the mask layer to form a BH pattern; etching the BH pattern, so that the top of the wafer body is etched into a BH mesa, the etching depth is below the quantum well layer, and the etching depth is below the quantum well layer; growing a current blocking layer on both sides of the BH mesa; removing the mask layer and the etching auxiliary layer; and forming a P-InP layer on the top of the BH mesa and the current blocking layer.

In an embodiment a method for processing an optoelectronic device includes providing a functional semiconductor layer stack on a growth substrate having an active layer for emitting light arranged between a first doped layer and a second doped layer, the second doped layer having a thickness, depositing a hard mask on the second doped layer, structuring the hard mask as to expose surface areas of the second doped layer, wherein the exposed surface areas are recessed with regard to a surface of the second doped layer beneath remaining portions of the hard mask and a remaining thickness of a material of the second doped layer at the exposed surface areas is less than 600 nm, diffusing a dopant into the material of the second doped layer at the exposed surface areas as to perform a quantum well intermixing within regions of the active layer beneath the exposed surface areas and applying a first contact material at least on unexposed areas of the doped second layer.

This application provides a light-emitting diode (LED) and its fabrication method. The LED includes a stress-relieving layer and a quantum well layer protection structure. The quantum well layer protection structure includes at least one sequentially deposited cyclic structure. Each cyclic structure includes: an AlGaN barrier layer, a first AlN protective layer, a second AlN protective layer, a first AlInN protective layer, an InGaN well layer, a second AlInN protective layer, a third AlN protective layer, and a fourth AlN protective layer sequentially deposited on the stress-relieving layer. The In content in both the first and second AlInN protective layers gradually increases from away from the InGaN well layer to closer to the InGaN well layer. By setting the first and second AlInN protective layers, a high In content is ensured in the InGaN well layer, thereby obtaining a high-quality, high-efficiency red-yellow light InGaN well layer and ensuring the luminous efficiency of the LED.

The invention provides a nitride epitaxial wafer, a preparation method of the nitride epitaxial wafer and a Micro-LED. The nitride epitaxial wafer comprises a heterogeneous substrate, a composite column structure, a nitride buffer layer, an n-type nitride layer, a light-emitting layer and a p-type nitride layer. The composite column structures are distributed on the surface of one side of the heterogeneous substrate at intervals, and each composite column structure comprises a plurality of composite Si nano columns and a composite nano layer wrapping the surfaces of the composite Si nano columns; the composite Si nano column comprises a first composite Si nano column and a second composite Si nano column; the height of the first composite Si nanorod is different from that of the second composite Si nanorod; the nitride buffer layer covers the composite column structure, and the surface of one side, far away from the substrate, of the nitride buffer layer is a horizontal plane; the light-emitting layer comprises at least one light-emitting unit, and each light-emitting unit comprises an In-containing quantum well layer and a nitride quantum barrier layer which are arranged in a stacked mode. According to the invention, the brightness, electric leakage and ESD antistatic release performance of the nitride epitaxial wafer can be improved.

The invention discloses a high-performance infrared focal plane detector based on a super-structure lens effect, and belongs to the technical field of photoelectric detection. The core of the invention lies in providing a novel detector architecture which carries out integrated collaborative design on metal microcavity resonance and a super-structure lens condensation effect at a pixel level. Multi-physical field collaborative optimization is carried out on a quantum well material, a metal microcavity structure and an array period, so that periodically arranged detector pixels simultaneously have dual functions of microcavity resonance frequency selection and microlens wavefront regulation and control. On one hand, incident infrared light is converged through a super-structure lens effect induced by an array period, and the energy density of a light field is enhanced; on the other hand, incident light coupled into the metal microcavity can excite a resonance mode in the microcavity, and the active area light field is further locally strengthened. According to the invention, additional optical elements are not needed, the process is completely compatible with the existing focal plane technology, and a brand new technical approach is provided for high-performance narrow-band infrared detection.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

This invention discloses an epitaxial structure and its fabrication method. The epitaxial structure includes at least two stacked light-emitting units; each light-emitting unit includes a stacked N-type conductive layer, a light-emitting layer, and a P-type conductive layer; the light-emitting layer includes at least one layer unit structure; each layer unit structure includes at least two sequentially stacked quantum wells, each quantum well including a well layer and a barrier layer, and a first AlGaN layer and a second AlGaN layer disposed on both sides of the well layer, with the second AlGaN layer disposed between the well layer and the barrier layer. This improves the heat resistance of the light-emitting layer, reduces the impact of the subsequent growth process on the initially grown light-emitting units, and improves the quality of the epitaxial structure. When forming a full-color Micro-LED chip, the fabrication process can be simplified while ensuring the quality of the full-color Micro-LED chip, thus reducing the fabrication cost of the full-color Micro-LED chip.

This application provides a semiconductor laser device and its fabrication method, relating to the field of semiconductor laser technology. The semiconductor laser device, from bottom to top, comprises a substrate layer, a buffer layer, a lower confinement layer, a lower composite waveguide layer, a quantum well, an upper composite waveguide layer, an upper confinement layer, a transition layer, and a cap layer. The lower composite waveguide layer, from bottom to top, comprises (Al...) x2 Ga 1‑x2 ) y2 In 1‑y2 P first lower waveguide layer, (Al) x3 Ga 1‑x3 ) y3 In 1‑y3 P second lower waveguide layer and (Al) x4 Ga 1‑x4 ) y4 In 1‑y4 P is the third lower waveguide layer. The upper composite waveguide layer, from bottom to top, includes (A1) x6 Ga 1‑x6 ) y5 In 1‑y5 P First upper waveguide layer, (Al) x7 Ga 1‑x7 ) y6 In 1‑y6 P second upper waveguide layer and (Al) x8 Ga 1‑x8 ) y7 In 1‑y7 P is the third upper waveguide layer. The lower confinement layer is (Al). x1 Ga 1‑x1 ) y1 In 1‑y1 P, the upper limiting layer is (Al) x9 Ga 1‑x9 ) y8 In 1‑y8 P. Where x3 > x1 > x2 = x4, x7 > x9 > x6 = x8. This semiconductor laser device adopts a wide stripe structure to effectively ensure beam quality and avoid beam clutter.

The invention belongs to the technical field of reliability analysis of devices, and particularly relates to a quantitative analysis method for migration characteristics of an indium component in an epitaxial wafer. Comprising the following steps: providing epitaxial wafers with consistent initial characteristics, and carrying out uniform cleavage; taking one small block as a reference sample, and performing external disturbance treatment on other small blocks; the method comprises the following steps: respectively carrying out non-destructive structure characterization treatment on a reference sample and a sample subjected to external disturbance treatment, including high-resolution X-ray diffraction test, photoluminescence and cathode fluorescence combined test and time-resolved photoluminescence spectrum measurement; comprising high-resolution transmission electron microscope and EDS energy spectrum combined imaging and secondary ion mass spectrum; finally, FP lasers are prepared respectively, and electrical characterization processing is carried out. And quantitatively analyzing the influence of indium component migration on the electrical properties of the FP laser according to the result. The method has the advantages that the migration of indium atoms is analyzed according to a method for changing the microstructure in the quantum well and changing the dynamic behavior of a carrier.

The invention relates to the technical field of photoelectric elements, and discloses a laser element with a two-dimensional Moire superlattice layer. Comprising a substrate layer, an n-type coating layer, the two-dimensional Moire superlattice layer, a lower waveguide layer, a quantum well active region, an electron blocking layer, an upper waveguide layer, a p-type coating layer and a p-type contact layer from bottom to top in sequence. The two-dimensional Moire superlattice layer is introduced between the n-type coating layer and the lower waveguide layer, the limiting effect of current carriers can be effectively improved, leakage current is reduced, meanwhile, the superlattice layer has a unique energy band structure, light field distribution of a device is optimized, in addition, by optimizing the structural design and the doping process of the p-type region, the light field distribution of the device is optimized, and the light field distribution of the device is optimized. And the electrical performance of the device can be obviously improved.

The invention relates to the technical field of semiconductor lasers, in particular to a two-dimensional all-solid-state large-angle butterfly laser based on an annular plane medium grating. The laser quantum well gain layer is arranged on the upper end surface of the substrate; the annular plane medium grating is arranged on an upper waveguide layer of the laser quantum well gain layer; the upper cladding is constructed above the annular planar dielectric grating through a semiconductor secondary epitaxy method; a top positive electrode; a bottom negative electrode; the AR anti-reflection interface is arranged at the laser output part of the annular plane medium grating, and the light output opening angle phi of the laser output part of the annular plane medium grating is larger than 0 degree and smaller than or equal to 360 degrees; and the HR high-reflection interface is arranged at a non-laser output part of the annular plane medium grating. The invention has the following beneficial effects: 1, all-solid-state large-angle output is realized; 2, high power output and high gain efficiency; 3, narrow linewidth characteristic and high wavelength purity; and 4, the structure is compact and the cost is low.

A pulsed laser device including: a III-V-on-silicon type hybrid pulsed laser source, including a gain section and a saturable absorber section which rest on a photonic substrate, and a longitudinal waveguide located in the photonic substrate; a control optical device including an optical pulse emitter source and a lateral waveguide located in the photonic substrate; the waveguides being sized so that the confinement factor Γlae / SA, Γlai / G in the quantum wells of the corresponding section of the optical mode of the lateral waveguide is higher than the confinement factor IL / ms, in the quantum wells of the semiconductor medium, of the optical mode of the longitudinal waveguide.

The invention discloses a high-speed high-precision frequency modulation continuous wave laser ranging chip, which belongs to the technical field of laser ranging and comprises a laser light source module, an outer resonant cavity linear frequency modulation module, a coherent detection module and a signal processing module. The laser light source module adopts an indium phosphide DFB laser with an optimized multi-quantum well structure to generate narrow-linewidth tunable seed laser; the outer resonant cavity linear frequency modulation module realizes injection locking through a multi-micro-ring cascade resonant structure, suppresses nonlinearity in combination with an FPGA closed-loop correction unit, and outputs a high-linearity frequency modulation signal; the coherent detection module receives and transmits signals through an antenna and completes coherent frequency mixing. And the signal processing module realizes time sequence synchronization based on the correlation function, and calculates the target distance and speed through the frequency modulation continuous wave principle. The chip realizes frequency modulation bandwidth greater than or equal to 1.5 THz, sub-millimeter ranging precision and data acquisition rate greater than or equal to 1000 times / s, solves the contradiction between narrow linewidth and wide tuning, adapts to scenes such as intelligent driving and unmanned aerial vehicles, and gives consideration to integration level and reliability.