799 results about "Quantum well" patented technology

The present disclosure provides a semiconductor green laser. The semiconductor green laser, from bottom to top, comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The active layer is a quantum well composed of well layers and barrier layers. Each of the well layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. Each of the barrier layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. An electron effective mass of each of the well layers is less than an electron effective mass of each of the barrier layers. A spontaneous polarization coefficient of each of the well layers is less than a spontaneous polarization coefficient of each of the barrier layers.

The invention provides a distributed feedback laser with a double-layer grating structure, and relates to the technical field of lasers, the laser forms an InGaAlAs multi-quantum well active region, an upper sampling grating layer and a lower phase shift grating layer on an n-type InP substrate in sequence, the upper grating layer is designed based on a reconstruction equivalent chirp technology, and the lower phase shift grating layer is designed based on a reconstruction equivalent chirp technology. Two sections of asymmetric modulation areas with sampling periods linearly gradually changing in opposite directions are arranged in the axial direction of the resonant cavity, and the lower grating layer is a quarter-wave phase shift grating matched with the period of the upper seed grating. Through the synergistic effect of equivalent phase modulation and phase shift generated by the double-layer grating, the photon density distribution in the cavity can be improved, the longitudinal space hole burning effect can be weakened, the sensitivity to end face phase fluctuation can be reduced, high single-mode power and large modulation bandwidth can be realized in a wide temperature range, and the double-layer grating is suitable for a high-speed optical communication and coarse wavelength division multiplexing transmission system.

A device (1) for emitting light, the device (1) comprising: a substrate (2); abase layer (4) arranged on the substrate (2); a diode layer structure (10) arranged on the base layer (4), the diode layer structure (10) comprising a quantum well layer structure (30) sandwiched between an n-doped semiconductor layer (12) and a p-doped semiconductor layer (14); the quantum well layer structure (30) comprising a first (41) and second (42) quantum well, a first (51) and a second (52) proximal barrier layer, and a first (61) and a second (62) distal barrier layer, wherein the first (41) and second (42) quantum wells and the first (51) and second (52) proximal barrier layers are sandwiched between the first (61) and second (62) distal barrier layers

The invention relates to the technical field of laser chips, in particular to a wide-wavelength electro-absorption modulated laser chip and a preparation method and application thereof. According to the wide-wavelength electro-absorption modulated laser chip provided by the invention, a plurality of specific areas are divided on a substrate, a first modulator layer, a first front grating layer and a second modulator layer are sequentially arranged on the areas, and phosphorus ions are injected into the first modulator layer and the second modulator layer. The key sampling grating is arranged in the first front grating layer, the rear grating layer and the second front grating layer in an electron beam direct writing mode. A cladding layer and an electric contact layer are sequentially stacked above all the functional layers, an electric isolation trench is formed between the functional layers through etching, the uppermost layer is a P-surface electrode, and an N-surface electrode is arranged below the substrate. According to the chip, the same post-sampling grating reflection area is utilized, double-end modulation is integrated through the quantum well hybrid technology, the effects of double-end light emitting and rate and wavelength tuning performance doubling of the same integrated chip are achieved, and the power consumption of the integrated chip is greatly reduced.

Semiconductor light-emitting devices are provided, which includes a substrate, a Negative-type semiconductor, a quantum well, an electron-blocking layer, and a Positive-type semiconductor arranged in a sequential stack. The quantum well includes a first quantum well, a second quantum well, and a third quantum well. Optical parameters of the first quantum well, the second quantum well, and the third quantum well are distributed in a gradient in at least one direction. The quantum well includes a periodic structure consisting of a well layer and a barrier layer. A coefficient of thermal expansion of the well layer is smaller than or equal to that of the barrier layer. An elastic coefficient of the well layer is smaller than or equal to that of the barrier layer. A lattice constant of the well layer is greater than or equal to that of the barrier layer. A coefficient of spontaneous polarization of the well layer is smaller than or equal to that of spontaneous polarization of the barrier layer.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention provides a semiconductor laser chip with a current modulation function and a preparation method, and relates to the field of semiconductor laser chips, and the semiconductor laser chip comprises a substrate layer, an n-type limiting layer, an n-type waveguide layer, a quantum well active region, a p-type waveguide layer, a first p-type limiting layer, a second p-type limiting layer and a contact layer which are sequentially stacked from bottom to top, the anti-reflection cavity surface and the high-reflection cavity surface are arranged on the two opposite sides of the second p-type limiting layer, the functional area is arranged between the anti-reflection cavity surface and the high-reflection cavity surface and comprises a current injection sub-area and a current blocking sub-area, the current injection sub-area is provided with a plurality of injection tips, the current blocking sub-area is provided with a plurality of blocking tips, and the injection tips and the blocking tips are arranged on the first p-type limiting layer. The injection tip is arranged between any two adjacent blocking tips; two grooves formed in the first p-type limiting layer penetrate through the second p-type limiting layer and the contact layer, and the two grooves are located in the two opposite sides of the current injection sub-region and the current blocking sub-region. According to the semiconductor laser chip, the light emitting power and the light beam quality of the semiconductor laser chip can be improved.

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention provides a heterojunction quantum well and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming a heterojunction quantum well at one side of the substrate through a chemical vapor deposition method; the heterojunction quantum well comprises a first barrier layer, a quantum well layer and a second barrier layer which are stacked in sequence, the first barrier layer is located between the quantum well layer and the substrate, the first barrier layer and the second barrier layer are both made of germanium-silicon, when the heterojunction quantum well is a silicon heterojunction quantum well, the quantum well layer is a silicon quantum well layer, and when the heterojunction quantum well is a silicon quantum well layer, the second barrier layer is a silicon quantum well layer. When the heterojunction quantum well is a germanium heterojunction quantum well, the quantum well layer is a germanium quantum well layer; in the process of forming the heterojunction quantum well, the precursor is decomposed in a target temperature range, and a product obtained through decomposition is deposited on one side of the substrate to obtain the heterojunction quantum well; the precursor is subjected to multi-stage reaction during decomposition, and the target temperature range is 300-550 DEG C; the interface quality of the heterojunction quantum well can be greatly improved, the surface roughness of the film layer can be reduced, and high-quality preparation of the heterojunction quantum well is realized.

The invention relates to the technical field of semiconductor photoelectrons, and discloses a vertical-cavity surface-emitting laser with an inverted structure and a preparation method of the vertical-cavity surface-emitting laser. The vertical cavity surface emitting laser with the inverted structure comprises a heterogeneous substrate, wherein a heat dissipation functional layer, a metal adhesion layer and a metal bonding layer are arranged on the surface of the heterogeneous substrate from bottom to top; the epitaxial structure comprises a p-type electrode, an ITO current expansion layer, a SiO2 current limiting layer, a first dielectric DBR layer, a p-type GaN layer, an electron blocking layer, a quantum well active region, an n-type GaN layer, a second dielectric DBR layer and an n-type electrode from bottom to top; and the p-type electrode is positioned at the bottom of the epitaxial structure and is bonded with the metal bonding layer to form an inverted structure. According to the vertical cavity surface emitting laser with the inverted structure provided by the invention, the heat dissipation function layer and the inverted structure design effectively improve the heat dissipation capability and the current uniformity of the device, and the service life, the performance stability and the reliability of the device are remarkably improved.

The invention relates to the technical field of semiconductor light-emitting devices, and particularly discloses an epitaxial structure for improving the internal quantum efficiency of a green Micro LED. The epitaxial structure comprises a substrate, and a buffer layer, an undoped GaN layer, an n-type GaN layer, a stress release layer, an active layer, a low-temperature Mg heavily-doped GaN layer, an electron barrier layer, a p-type GaN layer and a p-type GaN contact layer which are sequentially arranged on the substrate. The active layer comprises a plurality of periods of InGaN quantum well layers and an InAlGaN / GaN superlattice quantum barrier layer alternating structure, and a CAP layer formed by an AlGaN / GaN superlattice is arranged behind each quantum well layer. By adopting a wide-well narrow-barrier structure, a superlattice CAP layer for neutralizing a polarization electric field and a quaternary InAlGaN barrier structure for lattice matching and hole injection enhancement, multiple regulation and control of a polarization field, dislocation density and hole transport are realized, the internal quantum efficiency of a green-light Micro LED is remarkably improved, and the green-light Micro LED epitaxial structure is suitable for epitaxial preparation of a high-performance Micro LED chip.

The invention discloses a graphene integrated electrode LED epitaxial structure and a chip preparation method. The epitaxial structure sequentially comprises a GaAs substrate, an n-type GaAs buffer layer, an n-type limiting layer, a non-doped quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type GaP ohmic contact layer from bottom to top. The preparation method comprises the steps of epitaxial structure growth, p-type ITO transparent conductive layer preparation, bonding and substrate removal, mesa structure preparation, passivation isolation, graphene interconnection layer preparation and n-type electrode preparation. Graphene is used for replacing a traditional n-type GaAs ohmic contact layer and an ITO electrode, the problems of poor red light absorption, poor heat dissipation and mechanical brittleness of a traditional structure are solved, the red light transmittance of the chip is improved, the junction temperature under 3 currents is greatly reduced, the chip can bear tensile strain larger than 20%, the chip is suitable for flexible scenes, and the chip is suitable for high-performance large-scale production of red light Micro LEDs.

In order to provide an IR-QCL element which utilizes the characteristics of a ZnO-based semiconductor material, the present disclosure discloses a quantum cascade laser element 1000 that has a plurality of unit structures 10U in each of which a well layer of ZnO or ZnMgO and a barrier layer of ZnMgO or MgO are alternately and repeatedly stacked. Each unit structure includes a light emitting layer 10E and a continuum layer 10C. The light emitting layer includes: an upstream well layer 10W1 that is composed of a step quantum well having a first layer and a second layer, which have different MgO composition ratios from each other; and a downstream well layer 10W2 that has a smaller MgO composition ratio than any of the first layer and the second layer.

A flip-chip bonded photonic device and methods of fabrication are described. The device has a spot size converter and an antireflective coating on a sidewall of the spot size converter. The device has a semiconductor layer comprising a stack of quantum wells and an etch stop semiconductor layer beneath the layer comprising a stack of quantum wells. The device has a vertical sidewall for optical coupling and a sloped sidewall for metal interconnects. The device has a substrate and an optical waveguide residing above substrate. A mirror is coupled to the optical waveguide that bends light from the optical waveguide and transmits the light through the substrate. The light expands as it passes through the substrate. A collimating lens receives the light transmitted through the substrate and is lithographically aligned with the mirror. An optical engine has a flip-chip integrated electro-absorption modulated laser (EML) on a substrate.

The invention belongs to the technical field of optical communication, and particularly relates to a narrow linewidth laser based on a cascaded micro-ring resonant cavity. The laser comprises a semiconductor laser inner cavity module, a gain chip module, a phase shifter, a cascade micro-ring resonant cavity module, a thermal tuning module and an outer cavity reflector. The gain chip is combined with an III-V group material at the top of the silicon waveguide through heterogeneous integration, and adopts an InAlGaAs quantum well to provide high gain; the phase shifter is used for matching the lasing wavelength with the resonant wavelength; the cascaded micro-ring resonant cavity is formed by cascading three micro-rings, and tuning of the laser is realized based on a vernier effect; the thermal tuning module is composed of three semi-annular metal strips and a straight waveguide-shaped metal strip. The outer cavity reflector module adopts a Sagnac ring structure; the laser inner cavity, the gain chip, the cascade micro-ring resonant cavity and the outer cavity reflector are directly connected through silicon waveguides. The laser has the characteristics of narrow linewidth and wide tuning range, is easy to highly integrate and interconnect, and has important application value.

The invention discloses a semiconductor laser and a preparation method thereof, which can be used in the field of semiconductor device preparation, and the method comprises the steps: firstly, providing a first conductive type substrate; then, epitaxially growing a buffer layer of a first conduction type, a lower optical waveguide limiting layer, a quantum well active light-emitting layer, an upper optical waveguide limiting layer, a corrosion barrier layer, a current injection layer and an intrinsic ohmic contact layer on the substrate in sequence to obtain a multi-layer epitaxial layer; then, etching the multi-layer epitaxial layer to the corrosion barrier layer based on a preset pattern to form a ridge-shaped table which starts from the intrinsic ohmic contact layer and is deeply cut off to the corrosion barrier layer; and finally, performing particle doping in a region corresponding to the ridge-shaped table, and converting one sides, close to the corrosion barrier layer, of the intrinsic ohmic contact layer, the current injection layer, the corrosion barrier layer and the upper optical waveguide limiting layer into a second conduction type. Therefore, current limitation can be realized without performing multiple epitaxy like a traditional buried heterojunction, and the production cost and the process difficulty are greatly reduced.

The invention discloses an AlGaInP red light LED chip structure with a polarization-induced tunnel junction and a preparation method thereof. The chip structure sequentially comprises a GaAs substrate, an n-type GaAs buffer layer, an n-type etching barrier layer, an n-type GaAs ohmic contact layer, an n-type limiting layer, a non-doped InGaP / quantum well structure, a p-type spacer layer, a p-type AlGaInP polarization-induced doping layer, an insertion layer and an n-type ohmic contact layer from bottom to top. Wherein the p-type AlGaInP polarization induction doping layer introduces a piezoelectric polarization electric field through an Al component gradual change design, high-density two-dimensional hole gas is formed through induction, and the high-Al component insertion layer and the n-type ohmic contact layer form a tunnel junction; according to the invention, the problems of low p-type doping efficiency and high resistivity of the AlGaInP material with high Al component are fundamentally solved, the epitaxial structure and the chip process are simplified, the series resistance of the chip is reduced, the luminous efficiency is improved, the yield is improved, and the method has remarkable technical and commercial values.

A device (1) for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure (10) comprising a surface (11) and an electron guiding layer (12) below said surface (11), the electron guiding layer (12) of the semiconductor structure (10) being configured to guide electron movement in a plane parallel to the surface (11), the electron guiding layer (12) of the semiconductor structure (10) comprising an InGaN quantum well (14) or a heterojunction (18), the heterojunction (18) being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode (20) arranged on the surface (11) of the semiconductor structure (10); and at least one photoanode (30) arranged on the surface (11) of the semiconductor structure (10), wherein the at least one photoanode (30) comprises a plurality of quantum dots (32) of InxGa(1-x)N material, wherein 0.4≤x≤1. Also a system comprising such device is disclosed.

The invention discloses an LED dimming system and method, and the system comprises a white light LED which is used for emitting a spectrum in a 400-650 nm wave band; at least three red light LEDs of blue light excitation fluorescent powder respectively emit red light with different central wavelengths, the central wavelength of the first red light LED is 660nm + / -2nm, the half-peak width is less than or equal to 15nm, and an I < n > GaA < l > P material vertical cavity surface emission structure is adopted; the central wavelength of the second red light LED is 730nm + / -3nm, the half-peak width is less than or equal to 20nm, and the second red light LED adopts an A < l > GaAs material quantum well structure; the center wavelength of the third red light LED is 780nm + / -5nm, the half-peak width is less than or equal to 25nm, and a GaAsP material gradient refractive index waveguide structure is adopted; the driving control module comprises three independent constant-current driving units which are used for respectively controlling the current and PWM duty ratio of each red light LED; the optical mixing module is composed of a two-stage integral rod and a micro lens array and is used for realizing uniform mixing of spectrums.

The invention provides a buried heterojunction structure, a preparation method thereof and a laser. The preparation method comprises the following steps: primary epitaxy: growing an N-type InP buffer layer, a multi-layer quantum well structure and a P-type InP protective layer on an N-type InP substrate by using an MOCVD (Metal Organic Chemical Vapor Deposition) technology; growing an etching stop layer on the P-type InP protection layer, wherein the etching stop layer is made of an III-V group material; depositing an insulating medium as a mask on the etching stop layer, and etching the etching stop layer and the basic structure layer in a dry or wet etching mode to form a mesa structure; removing the mask on the mesa structure by wet etching; secondary epitaxy: growing a current limiting layer on the mesa structure by adopting an MOCVD (Metal Organic Chemical Vapor Deposition) technology, wherein the current limiting layer covers the whole mesa structure; and forming a funnel-shaped opening on the current limiting layer by wet etching to expose the etching stop layer. According to the invention, the difficulty of growing the current limiting layer by using the MOCVD technology is greatly reduced; the problem of current leakage is effectively suppressed; the current injection efficiency is improved; and the method has good process repeatability and controllability.

The invention discloses a multi-wavelength high-polarization-degree straight-cavity surface emitting laser which is structurally composed of a plurality of connecting layers and comprises a lower electrode layer, a substrate layer, a lower DBR layer, a lower spacing layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper spacing layer, an upper DBR layer and an upper electrode layer. The upper waveguide layer comprises a plurality of strip-shaped waveguides which are arranged in parallel in the same plane and have different widths, and filling materials filled among the plurality of strip-shaped waveguides. And the width change of the plurality of strip-shaped waveguides is an arithmetic progression of periodic circulation. Through the design of the upper waveguide layer structure, the growth speed difference can be realized, the thickness difference of the spacing layer is accurately controlled, and the laser wavelength is adjusted. Compared with a traditional method, high cost and technical problems caused by using a sub-wavelength grating are avoided.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

The invention discloses a preparation method and a structure of a novel electro-absorption modulated laser, and the method comprises the steps: symmetrically dividing a substrate into a double-end modulation region, a gain region, a grating region and a phase region, manufacturing a first mask pattern on the surface of the gain region, growing an active layer containing a quantum well structure in a mask gap through a selective region epitaxy technology, forbidden band red shift of the gain region is realized; manufacturing a mask covering the gain region and the modulation region, and etching a non-functional region to expose the substrate; a passive material with a wider band gap is grown in the exposed substrate area in a butt joint mode, and a photon limiting structure is formed; manufacturing a sampling grating through electron beam direct writing, growing a cladding layer and a contact layer, and etching an inverted table shallow ridge waveguide; and finally, etching an electrical isolation trench and manufacturing a double-sided electrode to complete device integration. Through the selective area epitaxial growth technology, active materials with two forbidden bandwidths of the gain area and the modulation area are achieved through one-time epitaxial growth, and a solution with extremely low cost is provided for the wavelength tunable electro-absorption modulated laser.

A VCSEL laser has one or more active regions having quantum wells and barriers. The active regions surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured. Additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process with a VCSEL output determined in response to a monitoring application of the VCSEL. The VCSEL has an HCG grating and a bottom DBR. A final thickness of an oxide layer different than an epitaxial growth of AlGaAs.

The invention relates to an anti-radiation five-junction solar cell and a preparation method thereof, and belongs to the technical field of semiconductor devices. The radiation-proof five-junction solar cell comprises a substrate, and a first buffer layer, a first component order change buffer layer, a fourth sub-cell, a second component order change buffer layer, a fourth tunnel junction, a fifth sub-cell and an electrode contact layer which are sequentially stacked on a first surface of the substrate, a second buffer layer, a third tunnel junction, a third sub-cell, a second tunnel junction, a second sub-cell, a first tunnel junction, a first sub-cell and a cap layer are sequentially stacked on the second surface of the substrate; and the base region thicknesses of the second sub-cell, the third sub-cell and the fourth sub-cell are smaller than the respective emitter region thicknesses. The anti-radiation five-junction solar cell comprises a plurality of sub-cells with quantum well structures, so that the anti-radiation performance of the solar cell can be effectively improved, and the last-stage use efficiency of the solar cell is further remarkably improved.

The invention discloses a gallium nitride-based third-generation semiconductor blue laser, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and is characterized in that a multi-state exciton induction layer is arranged between the lower waveguide layer and the lower limiting layer; the multi-state exciton induction layer comprises a first multi-state exciton induction layer, a second multi-state exciton induction layer and a third multi-state exciton induction layer. According to the invention, the multi-state exciton induction layer inhibits the annihilation of triplet excitons, reduces the dissipation of the triplet excitons, enhances the transfer of triplet energy, improves the generation efficiency of the triplet excitons, improves the number of long-life triplets, and improves the performance of the device. The radiation lasing of triplet excitons to the active layer of the laser element and the luminescence of singlet-triplet mixed self-confinement excitons are induced, the defect density is reduced, the excitation threshold value of the laser element is reduced, the quantum efficiency in a quantum well is improved, and the aging life of the quantum well is prolonged.

The invention provides an epitaxial structure of a semiconductor laser and a preparation method thereof. The epitaxial structure comprises a first waveguide layer, a first barrier layer, a first barrier layer, a quantum well layer, a second barrier layer, a second barrier layer and a second waveguide layer which are stacked from bottom to top. By adjusting different contents of an aluminum element and a gallium element in the first waveguide layer, the first barrier layer, the second barrier layer and the second waveguide layer, adjusting different contents of a gallium element and an indium element in the first barrier layer, and adjusting different contents of an aluminum element, a gallium element and an indium element in the second barrier layer, a first conduction band difference delta Ec11 is greater than 70meV, a second valence band difference delta Ev21 is greater than 240meV, and a second valence band difference delta Ev21 is greater than 240meV. The first valence band difference delta Ev11 and the second conduction band difference delta Ec21 are both smaller than or equal to 0 meV. The epitaxial structure can well balance the limiting effect on electrons and holes, so that the limiting capability of the epitaxial structure on current carriers is optimal, and the output efficiency of the device is improved.

The invention provides a high-stability single-mode semiconductor laser based on dynamic wavefront shaping and a control system, and relates to the technical field of semiconductor lasers, comprising a semiconductor laser gain module, a dynamic wavefront shaping module, a single-mode screening module and a laser output module which are optically coupled in sequence, wherein the semiconductor laser gain module is composed of a quantum well structure gain chip, a distributed feedback grating and a surface plasma structure are integrated on the surface of an active area of the gain chip, and the distributed feedback grating and the surface plasma structure are combined on the surface of the active area through a surface etching process. According to the invention, through the dynamic wavefront shaping module and the multi-parameter closed-loop control system, real-time adaptive regulation and control of the whole laser output process are realized. According to the system, wavefront distortion can be rapidly detected and compensated in a complex disturbance environment, and response delay and manual intervention of traditional static correction are remarkably reduced.

The present invention proposes an optical communication O-band silicon-based high-speed semiconductor laser chip and a manufacturing method thereof. Different buffer layers are used to form a growth surface with a low dislocation density of InP material; N-InAlGaAs is used to replace the conventional N-InAlAs electron blocking layer in the energy band structure to reduce the barrier for electrons to enter the quantum well from the N type and reduce the threshold; a superlattice structure quantum barrier is used to replace the single-layer barrier layer structure to improve the transport of heavy holes in the quantum well; and adjustments are made to the material structure to achieve an O-band high direct modulation rate semiconductor laser chip for optical communication on a silicon substrate with good reliability.