This invention discloses an
optimization system for
laser stimulated emission devices (SEMI) in
optical communication chips, relating to the field of
optical communication chip technology. Addressing the problems of existing SEMI devices that only optimize in a single dimension, suffer from low fault location accuracy and poor maintenance efficiency in large-scale cluster scenarios, this invention integrates modules for control, compensation optimization, closed-
loop control testing,
temperature control, stress suppression, heat dissipation, anti-interference,
optical coupling,
power consumption control, and fault location maintenance within the device itself. These modules work together to achieve
dynamic control of the epitaxial structure,
lattice mismatch compensation, closed-
loop control of epitaxial
wafer uniformity and domestic high-frequency testing, precise
temperature control and drift suppression, stress and
parasitic capacitance suppression, load-adaptive heat dissipation,
electromagnetic interference suppression, improved
optical coupling efficiency, reduced
power consumption, and precise fault location and closed-loop maintenance. This invention effectively improves device performance, stability, and maintenance efficiency, reduces maintenance and testing costs, adapts to the large-scale application of high-speed
optical communication, and promotes the independent development of optical communication
chip technology.