599results about "Optical wave guidance" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

The invention provides a semiconductor laser chip and a preparation method, and belongs to the technical field of semiconductor laser chip preparation, and the semiconductor laser chip comprises an N-surface metal, a substrate, an N-type limiting layer, an N-type waveguide layer, a tensile strain quantum well, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer, a SiO2 insulating layer, a first P-surface metal layer and a second P-surface metal layer which are sequentially arranged from bottom to top. Waveguide grooves are symmetrically formed in the two sides of the ohmic contact layer and penetrate through the ohmic contact layer, the bottoms of the grooves sink to the P-type limiting layer but do not exceed the P-type limiting layer, and a ridge waveguide is formed between the two grooves. The depth of the waveguide groove is of a stepped structure in the longitudinal direction, the depth of the area close to the cavity surface is increased to the N-type waveguide layer, the area completely covers the SiO2 insulating layer and the first layer of P-surface metal, but no second layer of P-surface metal exists, and the longitudinal stepped structure is formed. Through the design of the tensile strain quantum well and the stepped waveguide groove, cavity surface tensile strain release is realized, light absorption is reduced, and the reliability and the service life of the chip are improved.

The invention relates to the technical field of semiconductor lasers, in particular to an external cavity laser for realizing narrow linewidth through phase difference regulation and control of a bimetallic Bragg grating, which comprises a gain chip, a first high-reflection (HR) film is plated on the left end surface of the gain chip, and a first anti-reflection (AR) film is plated on the right end surface of the gain chip; a metal Bragg grating waveguide is arranged on the right side of the gain chip, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Tests show that the side mode rejection ratio (SMSR) is increased to 65dB and the line width is compressed to 0.6 kHz by using an interference enhancement effect and a mode suppression mechanism.

The invention discloses a preparation method and structure of a photon integrated laser, and the method comprises the steps: dividing a device into seven functional regions, including two modulator regions, two gain regions, two front grating regions and a common rear grating region; an active material of a modulator region and a passive material of a grating region are respectively formed through two times of butt-joint growth; after sampling gratings are manufactured in the front grating area and the rear grating area, a cladding layer, a contact layer and a ridge waveguide structure grow, cantilever beam heat insulation structures are formed on the two sides of the ridge waveguide of the shared grating area, and finally electrodes of the rear functional areas are manufactured. Wavelength tuning of the two lasers is achieved by sharing the rear grating area, and the size of the lasers is effectively reduced; the cantilever beam structure of the rear grating area is utilized to effectively reduce heat conduction, improve wavelength tuning efficiency and reduce power consumption; through the double-end integrated electro-absorption modulator, bidirectional light emission of a single integrated chip is realized, signal modulation of different bidirectional light emission wavelengths can be carried out, and the utilization rate of optical fiber transmission is improved.

A semiconductor laser (1) comprising a semiconductor body (2) with an active region (20) for generating radiation (8) and an optical interaction structure (3) with structural elements (30) is specified, wherein at least some of the structural elements (30) are arranged at different nominal center distances (35) to each other such that, during operation of the semiconductor laser (1) at a given operating point, local temperature differences in the optical interaction structure (3) reduce differences between the optical path lengths (39) that are assigned to the nominal center distances (35) of these structural elements (30). Furthermore, a method for manufacturing a semiconductor laser (1) is described.

The invention discloses a wavelength thermal tuning photon integrated device and a preparation method thereof.The device comprises a substrate, a modulator layer, a front sampling grating layer, a gain layer, a rear sampling grating layer, a cover layer and an electric contact layer, the cover layer and the electric contact layer jointly form a shallow ridge waveguide structure, and the shallow ridge waveguide structure is transversely arranged in the center of the upper portion of each functional layer; the whole cover layer and the electric contact layer are etched according to a preset ridge-shaped strip pattern, a cantilever beam structure is transversely arranged in the post-sampling grating layer, the cantilever beam structure comprises a cantilever beam and air grooves in the two sides of the cantilever beam, and the cantilever beam is located under the shallow ridge waveguide structure; the cantilever beam structure is formed by etching the rear sampling grating layer below the shallow ridge waveguide structure according to a preset cantilever strip pattern; according to the technical scheme, wavelength thermal tuning is achieved through collaborative design of the shallow ridge waveguide structure and the cantilever beam grating structure, limitation of material carrier concentration is avoided, thermal response is fast, and power consumption is remarkably reduced.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

The invention provides a micro-disk structure semiconductor laser and a preparation method, and belongs to the technical field of semiconductor lasers. The high-concentration Zn-doped p-GaAs multi-quantum-well multi-quantum-well light-emitting diode comprises a SiO2 barrier layer, an n-GaAs substrate with the thickness of 100 microns, an n-GaAs contact layer with the thickness of 100 nm, a Si-doped n-AlGaInP limiting layer with the thickness of 200 nm, an n-AlGaInP waveguide layer with the thickness of 400 nm, a first GaInP / AlGaInP multi-quantum-well layer, a GaAs barrier layer, a second GaInP / AlGaInP multi-quantum-well layer, an undoped p-AlGaAs waveguide layer with the thickness of 150 nm, a Zn-doped p-AlGaInP limiting layer with the thickness of 200 nm and a high-concentration Zn-doped p-GaAs contact layer with the thickness of 100 nm. By controlling the thickness and the doping concentration of each layer, efficient limitation and injection of carriers are realized; due to the design of the double multi-quantum well layer and the barrier layer, the device can realize stable lasing in two wavebands of 808nm and 650nm; the undoped waveguide layer effectively reduces the optical loss, prolongs the photon lifetime, and improves the laser output efficiency. And the quantum efficiency and the temperature stability of the device are improved.

The invention provides a semiconductor laser and a preparation method thereof. The preparation method comprises the following steps: forming a lower limiting layer on one side of a semiconductor substrate layer along a first direction; a ridge-shaped structure is formed on the side, away from the semiconductor substrate layer, of a part of the lower limiting layer, the ridge-shaped structure comprises a lower waveguide layer, an active layer, an upper waveguide layer, a grating layer and a cover layer which are sequentially stacked in the first direction, and the cover layer is located on the side, away from the upper waveguide layer, of the grating layer; an insulating epitaxial layer is formed on the side, away from the semiconductor substrate layer, of the lower limiting layer, the insulating epitaxial layer is located on the side, away from the semiconductor substrate layer, of the ridge-shaped structure and on the two sides, in the slow axis direction, of the ridge-shaped structure, and the thermal conductivity of the insulating epitaxial layer is larger than that of the active layer; an opening is formed in the insulating epitaxial layer, the opening exposes the cover layer, and the size of the opening in the slow axis direction is larger than that of the ridge-shaped structure in the slow axis direction; an upper confinement layer is formed in the opening.

A light-emitting element array includes a substrate, plural light-emitting elements arranged on the substrate, plural constriction grooves being provided in a periphery of each of the plural light-emitting elements, and forming a current constriction layer that constricts a current flowing through a light-emitting layer by oxidizing the light-emitting layer, and a block separation portion that is formed so as to overlap a part of the plural constriction grooves in plan view, and separates the plural light-emitting elements into plural blocks.

Systems and methods are provided for refractive index engineering for brightness enhancement and kink suppression in optical emitter devices. An example optical emitter device may include a first region that includes a first semiconductor material, an active region located on the first region, with the active region including a pumped active region between a front end and a back end of the optical emitter device, and a plurality of loss structures arranged along at least a portion of at least one side of the pumped active region. The plurality of loss structures may be arranged between the front end and the back end of the optical emitter device. The plurality of loss structures may include two or more continuous etched lines. The plurality of loss structures may include two or more discontinuous etched features.

The invention relates to a semiconductor laser arrangement with a laser-active material comprising layers of different semiconductor materials. A first and a second reflective element are arranged between the laser-active material, the second element being configured for extracting laser light from the laser-active material. According to the invention, at least one of the first and second elements has a layer stack with an electro-optic layer sequence. The electro-optic layer sequence comprises a first conductive and, in particular, transparent layer with a terminal; a second conductive and, in particular, transparent layer with a terminal; and an intermediate, in particular, insulating layer in which an optical parameter can be varied depending on a voltage between the first and the second layer.

The invention provides a single-mode 660nm semiconductor laser device with a superlattice structure and a preparation method of the single-mode 660nm semiconductor laser device, and belongs to the technical field of photoelectrons. The multi-quantum-well multi-quantum-well light-emitting diode sequentially comprises a GaAs substrate, a buffer layer, a sectional lower limiting layer, a lower waveguide layer, a multi-quantum-well active region, an AlInP / GaP superlattice, an upper waveguide layer, a sectional upper limiting layer, a band gap transition layer and a GaAs cap layer from bottom to top. The preparation method comprises the processes of substrate processing, buffer layer growth, V-group source switching, limiting layer and waveguide layer epitaxy, multi-quantum well and superlattice structure growth, cap layer deposition and the like. Through the segmented design of the superlattice structure and the limiting layer, the hole injection efficiency and the carrier limiting capability are improved, and the high-temperature working characteristic of the device is effectively improved. Stable output of single-mode laser in the 660nm wave band is achieved, reliable power output of 120mW can be kept in a high-temperature environment of 60 DEG C, and meanwhile, low loss, high conversion efficiency and excellent photoelectric performance are achieved.

A semiconductor laser chip (1) comprising a semiconductor body with a sequence of semiconductor layers (2) having an active region (20) for generating radiation is specified, wherein the semiconductor body has a resonator region (3) with the active region (20) and a diode region (4) spaced apart from the resonator region (3), wherein the active region (20) of the resonator region (3) and the diode region (4) are connected antiparallel to each other with respect to their forward direction. Furthermore, a semiconductor laser arrangement (10) with a semiconductor laser chip (1) is specified.

An edge-emitting semiconductor laser is described. The edge-emitting semiconductor laser comprises a first semiconductor layer exhibiting a first conductivity type, a second semiconductor layer exhibiting a second conductivity type, and an active region located between the first and second semiconductor layers and configured to generate electromagnetic radiation. The edge-emitting semiconductor laser further includes a contact layer for electrically connecting the first semiconductor layer and a lattice structure with a plurality of spaced-apart structures. The contact layer is located on the side of the first semiconductor layer facing away from the active region, and the lattice structure is located between the first semiconductor layer and the contact layer. A method for fabricating an edge-emitting semiconductor laser is also described.

A method for manufacturing a component includes steps for providing a surface formed by a material, arranging a mask structure on the surface, and performing a material removal process, whereby material is removed from the surface and deposited on the mask structure where it forms a structure.

Aspects of the present disclosure describe semiconductor DFB laser structures including both pumped and unpumped regions / sections wherein unpumped regions act as DBR reflector(s) while pumped regions act as DFB gratings. Semiconductor DFB laser devices according to aspects of the present disclosure include an active layer that extends the length of the device that is identical in both pumped and unpumped regions / sections.

Optoelectronic semiconductor chip (1) which is a semiconductor laser, with - a semiconductor layer sequence (2) in which at least one active zone (22) for generating radiation (R) is located, - a first electrode (31) and a second electrode (32) with which the semiconductor layer sequence (2) is electrically contacted, and - a filling (34) - the semiconductor layer sequence (2) in the region of the active zone (22) has at least one inclined facet (41, 42) which is designed for deflecting the radiation (R), such that the at least one inclined facet (41, 42) is a deflecting mirror within a resonator for the radiation (R), - the first electrode (31) and the second electrode (32) are located on the same mounting side (20) of the semiconductor layer sequence (2) as the at least one inclined facet (41, 42) and the mounting side (20) is a main side of the semiconductor layer sequence (2), - the second electrode (32), viewed from above on the mounting side (20), runs next to and along the resonator, such that an area of ​​the semiconductor layer sequence (2), which lies in extension of the resonator, is free from the second electrode (32) and free from the first electrode (31) when viewed from above on the mounting side (20), - the radiation (R) is coupled out of the semiconductor layer sequence (2) at a radiation side (21) of the semiconductor layer sequence (2) opposite the mounting side (20), - the second electrode (32) electrically contacts the semiconductor layer sequence (2) in at least one recess (33) and the first electrode (31) is attached to the semiconductor layer sequence (2) outside the at least one recess (33), - the second electrode (32) is designed as a planarization, such that the second electrode (32) has a greater thickness than the first electrode (31), and the first electrode (31) and the second electrode (32) form a common electrical contact plane (P) on the sides facing away from the semiconductor layer sequence (2), and - the filling (34) which fills at least one recess (33) on the at least one oblique facet (41, 42) next to the second electrode (32) and is made of a metal that reflects radiation (R).

To provide a semiconductor laser element that offers high output while also being highly resistant to COD. [Solution] A semiconductor laser element comprising a first region and a second region in which a plurality of semiconductor layers are stacked, wherein the first region forms a resonator between a first end face and a mirror region including a diffraction grating, and in a top view, the first region has an optical waveguide comprising a core region extending in the optical axis direction of the resonator and a cladding region sandwiching the core region in a direction perpendicular to the optical axis direction, and the second region is adjacent to the first region in the optical axis direction, and in a top view, the width of the second region in the direction perpendicular to the optical axis direction is greater than the width of the core region in the direction perpendicular to the optical axis direction, and the second region has a second end face from which laser light is emitted.

The present invention relates to the technical field of semiconductor lasers, and particularly relates to a GaN-based blue laser and a preparation method thereof, including a substrate, on which an N-type GaN layer, an N-type lower confinement layer, an N-type lower waveguide layer, an active region, an upper waveguide layer, a P-type electron blocking layer, a P-type upper confinement layer, and a P-type contact layer are sequentially stacked; the P-type upper confinement layer is composed of at least one U-shaped GaN sub-layer and multiple layers of P-type In x Al y Ga 1‑x‑y N sub-layers stacked and compounded, where 0 ≤ x < y < 1, 0 < x < 1, 0 < x + y < 1. The present invention uses at least one U-shaped GaN sub-layer and multiple layers of P-type In x Al y Ga 1‑x‑y N sub-layers stacked and compounded to form the P-type upper confinement layer, which not only improves the crystal quality of the material, enhances the radiative recombination in the active region of the LD device, thereby improving the output optical power and photoelectric conversion efficiency of the LD, but also reduces the voltage and thermal loss of the LD device, and improves the aging life and other performance of the LD device.

The application discloses a low-loss DFB laser, two P-AlGaInAs epitaxial layers are grown on the epitaxial structure of the low-loss DFB laser, and a P-AlGaInAs oxidation confinement layer is formed through chip process oxidation; the width of the ridge strip can be wider by adopting the structure, the ohmic contact resistance of the DFB laser can be reduced, the light field width of the DFB laser can be adjusted by adopting the oxidation confinement layer, meanwhile, the light field mode of the DFB laser can be compressed by utilizing the low refractive index characteristic of the oxidation confinement layer, the proportion of the light field in the P-InP ridge waveguide is reduced, and the light absorption loss is reduced.

A semiconductor laser device includes a first metamaterial element, a semiconductor substrate having a main surface, and a multijunction active region arranged over the main surface of the semiconductor substrate between the first metamaterial element and the semiconductor substrate. The multijunction active region includes a plurality of active regions each comprising a multiple-quantum-well (MQWs), and a plurality of tunnel junction layers providing electrical coupling and located between neighboring active regions along a vertical direction perpendicular to the main surface of the semiconductor substrate.

Provided is a a semiconductor laser module, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer. The active layer satisfies at least one of that a content ratio of an element Al to an element H satisfies a first preset proportion distribution, a content ratio of an element In to the element H satisfies a second preset proportion distribution, a content ratio of an element Si to the element H satisfies a third preset proportion distribution, a content ratio of an element Mg to the element H satisfies a fourth preset proportion distribution, and a content ratio of an element C to an element O satisfies a fifth preset proportion distribution.

The utility model provides a small-divergence-angle anti-reflection laser. The small-divergence-angle anti-reflection laser comprises a substrate; the active region is formed on the substrate; the etching region is positioned on the light emitting end surface of the active region and comprises a divergence angle improving layer; the cladding extends along the light emitting direction of the active region; the metal contact layer covers the cladding layer above the active region; the isolation layer covers the cladding layer above the etching region; and an N-metal layer and a P-metal layer, the N-metal layer covers the back surface of the substrate, and the P-metal layer covers the metal contact layer and the isolation layer. Through the arrangement of the isolation layer, current injection into the end face can be limited, the light emitting power density of the end face can be reduced, the non-radiative recombination process can be inhibited, the temperature of the end face is reduced in the area, optical catastrophe damage can be reduced, and the service life of the laser can be prolonged.

This optical semiconductor element includes: a substrate; a first ridge formed on the substrate and having a first first-conductivity-type cladding layer, a first core layer, a first second-conductivity-type cladding layer, and a first contact layer in this order from a lower side, with first ridge grooves provided on both lateral sides of the first ridge; and a first electrode formed in contact with the first contact layer, on the first ridge, without spreading to the first ridge grooves, the first electrode including a first solder layer.

The invention relates to a method for producing at least one semiconductor laser. The method comprises: providing a semiconductor layer sequence having at least one ridge waveguide and a widened region, wherein the main direction of extension of the widened region runs transversely or perpendicularly with respect to the main direction of extension of the ridge waveguide; and forming at least one main structure of the semiconductor laser from the widened region, wherein the main structure is connected to the ridge waveguide and comprises a decoupling facet of the semiconductor laser. The main structure is stepped and / or at least one auxiliary structure is formed from the widened region, which auxiliary structure is laterally spaced from the main structure. The invention also relates to a semiconductor laser.

To provide a semiconductor laser with minimal differences in characteristics between beams. [Solution] The multi-beam semiconductor laser element 100 includes a plurality of laser waveguides 200_1 to 200_4 formed in the laser region 902. Each laser waveguide 200 has a stripe-shaped power supply electrode 150. Power supply pads Pe are formed in pad regions 904 and 906. Connecting wiring Lc connects the corresponding laser waveguides 200 and power supply pads Pe to each other. The heat dissipation portion 182 covers N (2 ≤ N ≤ M) of the M laser waveguides 200 in the first direction, and is insulated from all of the power supply electrodes of the N laser waveguides 200 in the second direction.

Single-transverse-mode laser diodes that include a bowtie-shaped ridge waveguide. Related apparatuses, data storage devices, computing systems, and methods.