366results about "Laser output parameters control" patented technology

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention discloses an on-chip time-frequency transmission system and method based on an octave optical comb and an electro-optical modulation optical comb, and the method comprises the steps: constructing a chip-based optical reference cavity through the technologies of vacuum optical cement, photoresist backflow and the like, and achieving an on-chip ultra-stable laser through a phase modulator and a reflection separation optical path; an on-chip laser source pumping micro-ring resonant cavity is utilized to generate an octave optical frequency comb, frequency multiplication is carried out on the on-chip laser source pumping micro-ring resonant cavity and an additional laser source to realize detection and locking of carrier envelope offset frequency (fceo), frequency beating is carried out on the on-chip laser source pumping micro-ring resonant cavity and the on-chip ultra-stable laser device to realize frequency beating (fbeam) locking, and the laser source is utilized to generate an electro-optical modulation optical frequency comb through a circulating phase modulator to realize frequency beating and locking of the on-chip ultra-stable laser device. And the optical time frequency is locked with the locked octave optical comb, is sent to a far end after polarization control and light amplification, and simultaneously receives an electro-optical modulation optical comb at the far end and performs linear light sampling, so that the transmission of the optical time frequency is realized. The optical fiber or space optical link time-frequency transmission device can realize optical fiber or space optical link time-frequency transmission, and has the advantages of low overall noise, high transmission precision, compact structure, small size, low power consumption and the like.

A self-calibrating driver circuit (100, 300, 400, 500, 700) for a laser diode is disclosed. The circuit comprises a configurable current source (105, 305, 405, 505), a current mirror (115, 315, 415) configured to mirror a current from the configurable current source to a first transistor (120, 320, 420, 520, 720) and to a second transistor (125, 325, 425, 725), and a control circuit (140, 340, 440). The control circuit is configured to monitor a current through the first transistor at a first time, and to configure the current source based on the current through the first transistor to provide a desired current to the second transistor for driving the laser diode at a subsequent second time. A radiation-emitting device comprising one or more of the self-calibrating driver circuits and at least one radiation-emitting element is also disclosed.

A semiconductor laser (1) comprising a semiconductor body (2) with an active region (20) for generating radiation (8) and an optical interaction structure (3) with structural elements (30) is specified, wherein at least some of the structural elements (30) are arranged at different nominal center distances (35) to each other such that, during operation of the semiconductor laser (1) at a given operating point, local temperature differences in the optical interaction structure (3) reduce differences between the optical path lengths (39) that are assigned to the nominal center distances (35) of these structural elements (30). Furthermore, a method for manufacturing a semiconductor laser (1) is described.

A semiconductor laser chip (1) comprising a semiconductor body with a sequence of semiconductor layers (2) having an active region (20) for generating radiation is specified, wherein the semiconductor body has a resonator region (3) with the active region (20) and a diode region (4) spaced apart from the resonator region (3), wherein the active region (20) of the resonator region (3) and the diode region (4) are connected antiparallel to each other with respect to their forward direction. Furthermore, a semiconductor laser arrangement (10) with a semiconductor laser chip (1) is specified.

A frequency sweep control method and apparatus are provided. The method includes: outputting a first optical signal of a first laser unit, where a first frequency sweep range of the first optical signal is determined based on a first reference light emitting frequency and a first frequency variation upper limit; and switching to output a second optical signal of a second laser unit when a first frequency variation of the first optical signal is greater than or equal to a first threshold, where a second frequency sweep range of the second optical signal is determined based on a second reference light emitting frequency and a second frequency variation upper limit, and the first threshold is less than the first frequency variation upper limit.

In the field of ultrastable laser technology, tuning an ultrastable laser maintains its performance indicators without increasing additional lock noise and out-of-loop drift. [Solution] One acoustic-optic modulator and one electro-optic modulator are introduced separately, and the laser device, frequency shift unit, PDH frequency stabilization control unit, and ultra-stable cavity are integrated. [Effects] By changing the frequency of the acousto-optic modulator, high-precision tuning of the ultra-stable laser can be achieved. By changing the frequency of the electro-optic modulator, wide-range tuning of the ultra-stable laser can be achieved, enabling wide-range, high-precision, and dead-zone-free frequency tuning.

There is provided an external cavity laser, including: a photonic integrated platform including a gain chip providing a gain medium and at least one reflector chip, the photonic integrated platform including first and second functional layers made of different materials; a resonant cavity optically coupled to the gain medium and including a first and a second micro-ring resonators (MRR) in a Vernier configuration, the first MRR and second MRR extending within respective ones of the first and second functional layers made of different materials and having corresponding group indices, the first and second MRRs having different radii selected in view of said corresponding group indices; and a tuning mechanism for tuning a spectral response of at least one of the first and second MRR.

The present invention concerns a tunable Dense Wavelength Division Multiplex (DWDM) intra cavity laser device having a first optical wave guide having a first optical grating section, a second optical wave guide having a second optical grating section, an active gain section spatially separated from the second optical grating section and a phase section, and a DWDM-filter having an intra-cavity ring resonator located between the first optical wave guide and the second optical wave guide for coupling optical waves between the first and second optical wave guides. The tunable laser device is tunable in a discrete manner depending on a length of the ring resonator that is selected such that the free spectral range of the ring resonator matches a predetermined fixed wavelength spacing grid.

The application discloses a phase-sensitive pre-amplification method based on an electro-absorption modulated laser, and is applied to a star-ground laser communication system receiving end. A distributed feedback laser in the electro-absorption modulated laser amplifies weak pump light after long distance transmission, and generates idler light under the nonlinear effect of a laser cavity; an electro-absorption modulator in the electro-absorption modulated laser detects phase error information between signal light, pump light and idler light, and constructs an optical injection phase-locked loop through a feedback loop, so that stable control of the three-wave phase relationship is realized. Under the phase stability condition, the output light of the electro-absorption modulated laser is fed into a later-stage nonlinear medium to complete phase-sensitive pre-amplification. The phase-sensitive pre-amplification method based on the electro-absorption modulated laser has the advantages of simple structure and easy integration, can realize pump light amplification, idler light generation and phase error suppression under the condition of weak pump light, and effectively improves the receiving sensitivity performance of the star-ground laser communication system.

An optical device includes a generator, a light emitter, a modulator, an optical amplifier, a current source, a storage, and a controller. The generator generates an electric signal of a multilevel amplitude modulation method. The light emitter emits laser light. The modulator modulates the laser light using the electric signal and outputs an optical signal. The optical amplifier optically amplifies the modulated optical signal according to a drive current. The current source adjusts the drive current to be supplied to the optical amplifier. The storage previously stores an information with respect to input-output characteristics of the optical signal in the optical amplifier relative to drive current value of the drive current. The controller acquires, from the storage, the input-output characteristics corresponding to the drive current value of the drive current supplied to the optical amplifier and controls the electric signal based on the acquired input-output characteristics.

This invention discloses a Littrow-type cavity length-compensated mode-hopping-free continuously tunable semiconductor laser, comprising a laser diode (1), a collimating lens (2), and a diffraction grating (3). Mode-hopping-free continuous tunability is achieved through a micro-elastic material base (4). The micro-elastic material base (4) is hollowed out to create a movable block (401) that can be driven by a piezoelectric ceramic (5), an isosceles triangular groove (404), and a pair of waist arms (406), enabling micro-displacement and micro-angle changes in the waist arms (406), thereby achieving continuous tunability of the output laser. This invention achieves mode-hopping-free continuous tunability of the laser output through an innovative combination of a special mechanical structure and the frequency selection characteristics of the grating. The structure is compact and highly stable, ultimately resulting in a mode-hopping-free continuously tunable external cavity semiconductor laser that meets the requirements of high-end precision measurement.

The invention discloses a photonic crystal surface emitting laser based on electro-optical effect modulation and an emission angle and wavelength regulation and control method thereof, and belongs to the field of laser devices. The photonic crystal surface emitting laser comprises a substrate layer, an isolation layer and an active LiNbO3 layer; the isolation layer is a SiO2 isolation layer or an air isolation layer, and the air isolation layer is formed by etching the SiO2 isolation layer through a SiO2 etching agent; the active LiNbO3 layer is made of erbium-doped LiNbO3 or ytterbium-doped LiNbO3, and periodic holes are etched in the surface of the active LiNbO3 layer to form the photonic crystal layer. The photonic crystal surface emitting laser is prepared by using the active electro-optical effect material, the electro-optical effect material is combined with the photonic crystal surface emitting laser, and the emission angle and the emission wavelength are regulated and controlled through the electro-optical effect of LiNbO3 and the diffraction effect of the photonic crystal.

Method for characterizing a batch of gain chips, each having a first reflective face and a second transparent face, the method comprising, for each gain chip: positioning the gain chip (99) with the second face facing towards a reflective diffraction grating (6); supplying the gain chip (99) with a plurality of first and second values of supply current so that the gain chip (99) emits a respective first light beam (60) for each first value of supply current and a respective second light beam (60') for each second value of supply current; making impinge each first light beam (60) on the reflective diffraction grating (6) in a first angular position so as to generate a respective first zero-order diffracted beam (61) and a respective first first-order diffracted beam (62) entering the gain chip (99), and each second light beam (60') on the reflective diffraction grating (6) in a second angular position so as to generate a respective second zero-order diffracted beam (63) and a respective second first-order diffracted beam (64) not entering the gain chip (99); measuring a respective first value of optical power of each first zero-order diffracted beam (61), and a respective second value of optical power of each second zero-order diffracted beam (63); associating each first value of optical power with the respective first value of supply current, and each second value of optical power with the respective second value of supply current; as a function of pairs of first values of supply current and of optical power and as a function of a first predetermined mathematical correlation, calculating a respective differential quantum efficiency, and, as a function of pairs of second values of supply current and of optical power and as a function of a second predetermined mathematical correlation, calculating a respective modal gain coefficient and a respective carrier density at transparency; verifying that the respective differential quantum efficiency, the respective modal gain coefficient, and the respective carrier density at transparency satisfy a respective predetermined selection criterion.

According to a first aspect, the present disclosure relates to a distributed feedback (DFB) laser configured to control a wavelength of emitted light from the DFB laser, the DFB laser comprising a planar substrate, a substantially planar front facet with an anti-reflective coating, the front facet substantially perpendicular to the planar substrate, a substantially planar rear facet with a high reflectivity coating, the rear facet substantially perpendicular to the planar substrate, a laser section positioned between the rear facet and the front facet, the laser section comprising: a first ensemble of substantially planar layers configured to produce, with said planar substrate, a first PIN junction, the first ensemble of substantially planar layers comprising: a first top layer substantially parallel to the planar substrate; an active layer substantially parallel to the planar substrate and configured to emit light through the front facet, the active layer arranged between the planar substrate and the first top layer; a grating layer arranged substantially parallel to the active layer, the grating layer arranged between the planar substrate and the first top layer in proximity to the active layer; a Bragg grating arranged in said grating layer and configured to reflect light towards said front facet; and a phase section positioned between the rear facet and the laser section, the phase section comprising: a second ensemble of substantially planar layers comprising: a second top layer substantially parallel to the planar substrate, the second top layer substantially coplanar with the first top layer; an optical layer arranged between the planar substrate and the second top layer, the optical layer substantially coplanar with the active layer and optically coupled with the active layer; a non-grating layer substantially coplanar with the grating layer; and an element in electrical or thermal contact with the optical layer, the element configured, under application of a current or voltage, to change a refractive index of the optical layer so as to change the wavelength of the emitted light.

The invention discloses an on-chip integrated optical frequency comb generation structure and an optical frequency comb generation method, the structure is formed by heterogeneous integration of a laser chip and an integrated optical microcavity chip, and the integrated optical microcavity chip comprises a polarization beam splitter, two ring filters, an Add-drop type microcavity and two output ports; the polarization beam splitter is used for dividing laser injected by the laser chip into a TE mode and a TM mode, and the TE mode and the TM mode have different power ratios and are injected into the two ring filters respectively. The two ring filters are respectively provided with a heating electrode for controlling the size of the passing wavelength, and the two ring filters have different diameters for transmitting different wavelengths; the Add-drop type microcavity is used for generating an optical frequency comb, and a heating electrode is arranged above the microcavity and used for controlling the resonant wavelength passing through the microcavity. The problems that an existing optical frequency comb debugging system is large and debugging is complex can be solved, the size of the microcavity optical frequency comb can be greatly reduced, and power consumption is reduced.

The invention provides a hybrid integrated semiconductor laser and a bandwidth increasing method, and relates to the field of optoelectronic devices. The hybrid integrated semiconductor laser comprises a semiconductor laser chip and a silicon nitride outer cavity chip, an optical feedback regulation and control structure is integrated in the silicon nitride outer cavity chip, active control over feedback light is achieved, photon-photon resonance and detuning loading effects are further introduced, and the modulation bandwidth of a directly modulated laser is cooperatively improved. The hybrid integrated semiconductor laser provided by the invention not only is simple in structure and high in preparation yield, but also can carry out secondary improvement on the bandwidth of a finished laser, and has the advantages of flexible regulation and control, easy integration and wide applicability.

The application discloses a discharge circuit, method, device and electronic equipment, and belongs to the electronic technical field. The specific scheme comprises: a laser control module, which is used for controlling the laser emission module to be in a non-working state when a first voltage is greater than a second voltage; and controlling the laser emission module to be in a working state when the first voltage is less than or equal to the second voltage; a feedback adjustment module, which is used for detecting the first voltage; and reducing the discharge time of the laser emission module by reducing the discharge resistance of the laser emission module or by reducing the discharge capacitance of the laser emission module when the first voltage is greater than the second voltage; wherein the first voltage is a discharge voltage of the laser emission module, and the second voltage is a voltage threshold value determined according to a power supply voltage.

The invention relates to the technical field of semiconductor lasers, in particular to a broadband wavelength fast scanning laser which comprises a base, a laser gain chip and a sleeve are installed on the base, and the sleeve surrounds the laser gain chip and extends along the light emitting side of the laser gain chip; a movable reflecting mirror is movably arranged in the sleeve, and the movable reflecting mirror and the laser gain chip are oppositely arranged to form an optical resonant cavity; a conductor piece is arranged on the movable reflecting mirror, and a driving coil is arranged outside the sleeve in a surrounding manner; when variable current is introduced into the driving coil, a variable magnetic field is generated in the sleeve, and the variable magnetic field enables electromagnetic force to be generated on the conductor piece so as to drive the movable reflector to move relative to the laser gain chip, so that the cavity length of the optical resonant cavity is changed. The technical problem that an existing tunable MEMS-VCSEL cannot give consideration to the broadband tuning range and the high scanning speed at the same time is solved.

A light detection and ranging (LIDAR) device in an integrated chip includes a substrate layer, a cladding layer, a waveguide, and an ohmic element. The cladding layer is disposed with the substrate layer. The waveguide runs through the cladding layer. The ohmic element runs through the cladding layer. The ohmic element is arranged to impart heat to the waveguide when an electrical current is driven through the ohmic element.

An end-emitting laser (EEL) system and a method for manufacturing the same are disclosed. The EEL system comprises an EEL structure configured to generate laser radiation along a first longitudinal axis defined by the active layer of the EEL system. Furthermore, the EEL system comprises a photonic crystal structure. The photonic crystal structure is defined by a two-dimensional periodic array distributed within the array plane and is arranged to couple the generated laser radiation laterally across the EEL system. The presence of the photonic crystal structure within the EEL system causes light to be scattered within the photonic crystal in a direction perpendicular to the output field generated by the EEL system. The described EEL system makes it possible to increase the area of ​​the EEL system while maintaining single spatial and longitudinal mode operation, thereby obtaining a high-power coherent beam.

The application provides a driving circuit and a circuit driving method, characterized by comprising: a current output module, which outputs different current values; a first adjustable resistor, which determines a first adjustable resistor value according to a first current threshold value output by the current module; and a second adjustable resistor, which determines a second adjustable resistor value according to a second current threshold value output by the current module. Thus, the application can be used for calibrating emission or final ranging results in a time-of-flight ranging scheme, so that the emission source emits a more accurate light waveform or the ranging result is more accurate.

A method, and related system and computer program product are provided for producing a subsurface laser engraving (SSLE). The method involves, using at least one processor, generating a three-dimensional (3D) model for the object based on a two-dimensional (2D) digital image file of the object, by applying a trained machine learning (ML) model to the 2D digital image file, generating a point cloud model for the object based at least on the 3D model for the object, and controlling a focal position and a focal depth of a laser, based at least on the point cloud model for the object, while the laser performs subsurface engraving of a transparent material block to produce the SSLE depicting the object.

The invention relates to a method (100) for monitoring the laser control of a laser system (1), comprising the following steps: - performing (101) the laser control of the laser system (1) using a first analog-to-digital converter (2), - monitoring (102) the laser control of the laser system (1) using a second analog-to-digital converter (3), wherein the second analog-to-digital converter (3) is configured as a redundancy to the first analog-to-digital converter (2) in the laser system (1). The invention further relates to a computer program, a device, and a storage medium for this purpose.

The invention relates to the field of light beam control, in particular to a light beam collimation control method and system of a VCSEL light source. The method comprises the following steps: detecting an initial emergent light beam of a VCSEL light source, carrying out periodic tracking sampling, and determining a light beam structure response characteristic; carrying out region offset calculation one by one according to light beam structure response characteristics to obtain offset compensation parameters of different partitions; adjusting the driving current of the light emitting unit based on the offset compensation parameter to obtain a current adjustment parameter; applying the current adjustment parameter to a VCSEL array in real time, and performing collimation stability evaluation to obtain a stability coefficient; and performing evaluation based on the stability coefficient, and when it is judged that the VCSEL light beam enters a stable collimation state, recording the current adjustment parameter as a collimation adjustment parameter, and entering a low-disturbance maintenance mode. According to the invention, the driving current parameters of the light source are precisely regulated and controlled, so that the light beam collimation precision, stability and anti-disturbance capability are improved.

A method for monitoring a laser control process in a laser system includes (i) performing the laser control process in the laser system using a first analog-digital converter, and (ii) monitoring the laser control process in the laser system using a second analog-digital converter. The second analog-digital converter is configured as a redundancy to the first analog-digital converter in the laser system. A computer program, an apparatus, and a storage medium for this purpose is also disclosed.

An apparatus for providing a modulated light beam, the apparatus comprising at least a first light source (102) configured to provide a first light beam and a modulating system (104) configured to provide a first modulation to the first light beam comprising a first amplitude modulation and a first frequency modulation, and provide a second modulation to the first light beam comprising a second amplitude modulation and a second frequency modulation, wherein the modulating system provides the first modulation by providing a first control signal and provides the second modulation by providing a second control signal, wherein the first control signal and the second control signal comprise a selected amplitude ratio and selected phase difference, such that the first light beam is modulated by a target modulation to a first modulated light beam, wherein the target modulation comprises a target frequency modulation and target amplitude modulation, wherein the modulating system comprises at least a reference clock (106) for providing a clock signal and a driving unit (108) configured to obtain the clock signal, wherein the driving unit is configured to provide the first control signal and the second control signal based on at least the obtained clock signal.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

The invention provides a laser parameter intelligent control device which comprises a light source output module used for outputting a laser beam, and a light source detection module used for obtaining actual light beam information from the received laser beam and transmitting the actual light beam information to a controller; the controller is used for performing data screening according to expected parameters input by a user and transmitting a working mode signal and a power supply parameter signal formed based on a screening result to the power supply module, and the power supply module is used for providing power supply for the light source output module according to the working mode signal and the power supply parameter signal of the controller; the controller is further used for comparing the received actual light beam information with expected parameters and conducting parameter adjustment or mode switching decision based on the comparison result so as to form an adjustment signal and transmit the adjustment signal to the power supply module, and the power supply module adjusts power output according to the adjustment signal. According to the invention, the intelligent switching of the working modes of the laser is realized, and the adaptation condition of the peak power, the pulse width and the average power to the user demand is improved.

The embodiment of the present application provides a laser, which comprises a waveguide type coupler, one end of the waveguide type coupler being provided with an anti-reflection film; and a waveguide structure, one end of the waveguide structure being connected to the other end of the waveguide type coupler, and the other end of the waveguide structure being provided with a high-reflection film. The present application effectively reduces the cavity surface light power density of a high-power laser.