915results about "Laser output parameters control" patented technology

The invention provides a tunable micro-nano laser based on a perovskite phase change material and a preparation method thereof, and belongs to the technical field of micro-nano photoelectron, the tunable micro-nano laser comprises a substrate, and a distributed Bragg reflector, a gain dielectric layer and a reflector which are sequentially arranged on the substrate from bottom to top; wherein the gain medium is a perovskite material with a crystal phase transition characteristic. The substrate is made of a material which is transparent or low in loss to pump light and emitted light; the distributed Bragg reflector is formed by alternately arranging high-refractive-index layers and low-refractive-index layers; the gain dielectric layer is a perovskite thin film layer with a crystal phase transition characteristic, and a perovskite material has a spectrum tuning function in the laser resonant cavity; the reflecting mirror is composed of a metal film. According to the invention, the perovskite material is used as a gain medium and a phase change material at the same time, the wide-range tuning of laser wavelength is realized, and the tuning range can reach several nanometers or even wider; the energy utilization efficiency can be improved, the stability is high, and the method is suitable for various types of tunable micro-nano laser applications.

The invention discloses a wavelength-tunable electro-absorption modulated laser and a preparation method thereof. The laser comprises a substrate, and a first modulator region, a first gain region, a grating region, a second gain region and a second modulator region which are sequentially arranged on the substrate and are positioned on the same plane, phosphorus ions are doped in constituent materials of the first modulator region and the second modulator region. The first gain region and the second gain region are used for exciting laser with various wavelengths under the action of different direct currents; the grating area is used for carrying out mode selection on the various wavelengths; the first modulator area and the second modulator area serve as light emitting ends to emit tunable laser, and double-end laser emission is achieved. The two electro-absorption modulators and the wavelength tunable laser are integrated back to back, a wavelength tuning area is shared, and bandwidth doubling is achieved. Through epitaxial growth of one-time active material and one-time passive material, integration of three forbidden bandwidth materials is realized, the manufacturing process is simplified, and the performance of the device is improved.

A frequency stabilization method and system for tunable light sources based on characteristic curve reconstruction are provided, which relate the field of frequency stabilization technologies of modulation absorption spectrum. A set of frequency stabilization control method and system based on internal modulation absorption spectroscopy of light source is constructed, and a high-precision laser frequency stabilization method under large-amplitude and high-bandwidth frequency modulation based on frequency discrimination curve reconstruction is proposed to solve a problem that it is difficult for micro-probe laser interferometry measurement benchmark to balance large-amplitude and high-bandwidth frequency modulation, and high-precision frequency stabilization, resulting in that it is difficult to obtain high relative accuracy measurement under large-range measurement. Under the large-amplitude and high-bandwidth frequency modulation, a distortion model of the frequency discrimination curve and a distortion correction model are constructed, which is used for feedback adjustment of phase compensation and reconstructing the frequency discrimination curve.

The utility model provides a multi-single-tube semiconductor laser diode densely-arranged beam shaping and coupling device, comprising a semiconductor array laser used for emitting a first beam array and carrying out fast and slow axis collimation to obtain a second beam array; the light beam reflection separation system is used for performing separation arrangement on the second light beam array; the fast and slow axis conversion system is arranged on a light path where the light beam is emitted by the light beam reflection separation system and used for rotating the fast and slow axis of the second light beam array which is separated and arranged by 90 degrees; the confocal beam shrinking and expanding system is used for simultaneously focusing the fast axis light spots and the slow axis light spots of the separated and arranged second light beam array and then carrying out fast axis beam shrinking and slow axis beam expanding to obtain a third light beam array; the light beam reflecting and combining system is arranged on the light beam emergent light path of the confocal beam shrinking and expanding system and is used for closely arranging the third light beam array; and the focusing system is arranged on a light path where the light beams are emitted by the light beam reflecting and combining system, and is used for focusing the light spots of the closely arranged third light beam array to a target size.

The invention relates to the technical field of laser temperature control, in particular to a temperature control method and system for a multi-environment VCSEL laser, and the method comprises the steps: collecting the temperature of the VCSEL laser at each moment, and the current of a thermoelectric refrigerating unit used for carrying out the temperature control of the VCSEL laser at each moment; determining the temperature fast adjustment intensity and the temperature oscillation characteristic value of the VCSEL laser at each temperature control moment; obtaining a steady state adjustment value of the VCSEL at each temperature control moment; determining the magnetic field interference suppression intensity of the VCSEL laser at each temperature control moment; and correcting a first threshold value and a second threshold value of the integral separation PID control algorithm, determining a switching coefficient of an integral item in the integral separation PID control algorithm, and performing temperature control on the VCSEL at each temperature control moment. Therefore, the temperature control precision of the VCSEL laser is improved.

The invention relates to the technical field of laser control, in particular to a light spot consistency control method and system for DFB lasers, and the method comprises the steps: obtaining the current and temperature of each DFB laser at each moment in each control period; calculating the burr saliency, the temperature rise drift coefficient, the temperature drop drift coefficient and the heat source interference value of each DFB laser in each control period; and determining expansion and contraction factors of a positive universe and a negative universe in the fuzzy control algorithm, and controlling the temperature of the DFB laser in real time so as to control the light spot consistency of the DFB laser. According to the method and the device, by selecting the proper telescopic factor and dynamically adjusting the discourse domain range of the fuzzy control algorithm, the response speed of temperature control of the DFB laser is improved, the temperature of the DFB laser is controlled more accurately, and light spot consistency control is realized.

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention discloses an on-chip time-frequency transmission system and method based on an octave optical comb and an electro-optical modulation optical comb, and the method comprises the steps: constructing a chip-based optical reference cavity through the technologies of vacuum optical cement, photoresist backflow and the like, and achieving an on-chip ultra-stable laser through a phase modulator and a reflection separation optical path; an on-chip laser source pumping micro-ring resonant cavity is utilized to generate an octave optical frequency comb, frequency multiplication is carried out on the on-chip laser source pumping micro-ring resonant cavity and an additional laser source to realize detection and locking of carrier envelope offset frequency (fceo), frequency beating is carried out on the on-chip laser source pumping micro-ring resonant cavity and the on-chip ultra-stable laser device to realize frequency beating (fbeam) locking, and the laser source is utilized to generate an electro-optical modulation optical frequency comb through a circulating phase modulator to realize frequency beating and locking of the on-chip ultra-stable laser device. And the optical time frequency is locked with the locked octave optical comb, is sent to a far end after polarization control and light amplification, and simultaneously receives an electro-optical modulation optical comb at the far end and performs linear light sampling, so that the transmission of the optical time frequency is realized. The optical fiber or space optical link time-frequency transmission device can realize optical fiber or space optical link time-frequency transmission, and has the advantages of low overall noise, high transmission precision, compact structure, small size, low power consumption and the like.

The invention provides a topological polygonal laser. According to the device, a topological non-trivial domain formed by two-dimensional gyromagnetic photonic crystals is combined with a trivial domain, and an out-of-plane magnetic field externally applied to a sublattice A is started to open an energy band gap, so that a multi-position angular state is realized. The two-dimensional gyromagnetic photonic crystal opens or closes an out-of-plane magnetic field externally applied to the sub-lattice A so as to realize opening and closing of the angular state of the topological angular state laser. The topological multi-angular-state laser is realized by taking the two-dimensional gyromagnetic photonic crystal as a platform, and the topological multi-angular-state laser has the advantages that switching of angular states can be realized without changing the structure, and the laser is topologically protected and has topological robustness.

The invention relates to the technical field of semiconductor photoelectronics and liquid crystal materials, in particular to a vortex light laser and a preparation method thereof. The supporting structure is arranged on the laser light source; the liquid crystal structure is arranged on the supporting structure, and the liquid crystal structure is configured to convert linearly polarized light from the laser light source into circularly polarized light and further convert the circularly polarized light into vortex light. In addition, the cholesteric liquid crystal in the liquid crystal structure can change the rotation direction of the circularly polarized light under the irradiation of the ultraviolet light source, so that the topological charge number of the vortex light can be regulated and controlled. Compared with a traditional vortex light laser, the vortex light laser has the advantages of being high in conversion efficiency, low in preparation cost, high in preparation speed, capable of tuning vortex light of orbital angular momentum, capable of conducting autonomous regulation and control on emergent light under the condition that an external electric field is not introduced, and capable of improving the utilization rate of the vortex light. The preparation process is compatible with the traditional semiconductor process, the size is small, and the integration level is high.

A self-calibrating driver circuit (100, 300, 400, 500, 700) for a laser diode is disclosed. The circuit comprises a configurable current source (105, 305, 405, 505), a current mirror (115, 315, 415) configured to mirror a current from the configurable current source to a first transistor (120, 320, 420, 520, 720) and to a second transistor (125, 325, 425, 725), and a control circuit (140, 340, 440). The control circuit is configured to monitor a current through the first transistor at a first time, and to configure the current source based on the current through the first transistor to provide a desired current to the second transistor for driving the laser diode at a subsequent second time. A radiation-emitting device comprising one or more of the self-calibrating driver circuits and at least one radiation-emitting element is also disclosed.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser with an adjustable time domain. According to the time-domain-adjustable semiconductor laser, a mutual injection coupling region and a gain region are arranged on a semiconductor laser chip, the mutual injection coupling region comprises multiple sections of interval units, and the ratio of the length of a saturable absorber region to the length of the gain region in a resonant cavity is controlled by adjusting the absorption / gain characteristics of the interval units. And a plurality of pulse generation mechanisms are switched to adjust the pulse width. On the premise that the structural complexity of the semiconductor laser is reduced, large-range adjustment of laser pulses can be achieved.

The invention belongs to the field of ultrafast laser design and hyperspectral imaging, and provides an active spectrum modulation ultrafast laser and a hyperspectral detection system and method thereof, and the technical scheme is that the active spectrum modulation ultrafast laser comprises an ultrafast pulse laser, a primary polarization modulation module, a nonlinear broadening module and a secondary polarization modulation module; narrow-spectrum pulse laser emitted by the ultrafast pulse laser enters the nonlinear broadening module to be subjected to spectrum broadening to obtain wide-spectrum pulse laser after being subjected to preliminary modulation of the polarization state of laser of all wave bands through the preliminary modulation module, and the wide-spectrum pulse laser emitted by the nonlinear broadening module enters the secondary polarization modulation module to be subjected to spectrum broadening to obtain wide-spectrum pulse laser. And after randomizing the polarization state of each spectrum, irradiating the spectrums to a target scene. After the spectrum is modulated, the camera is controlled to collect the reflectivity intensity information of the target scene, and after irradiation and image collection of multiple groups of selected spectrum structures are completed, hyperspectral detection of the target scene is achieved in combination with the measured spectrum distribution and the corresponding reflectivity information.

An improved external cavity laser (1) is provided herein that comprises a gain section (2) and an external cavity passive chip (3) with a first end (31) that is optically coupled to the gain section (2) and with a second end (35) providing a laser output, the external cavity passive chip (3) having a cavity (33) between the first end (31) and a phase shifted Bragg grating, FBG (34).

The invention discloses an automatic wavelength tuning method and system for a tunable laser based on particle swarm optimization, and is applied to the technical field of wavelength tuning of semiconductor tunable lasers. According to the method, a particle swarm optimization (PSO) algorithm is taken as a core, multi-target iterative search optimization is carried out on initial current-wavelength data, and in a tuning initialization stage, a system firstly carries out coarse scanning on three paths of current of a left reflecting grating region, a right reflecting grating region and a phase modulation region of a sampling grating distributed Bragg reflection laser; manual intervention is not needed, the system can complete efficient configuration screening in a given target wavelength range, the intelligent level of the tuning system is remarkably improved, good automation capacity and expansibility are achieved, scanning of a large number of invalid data and tedious operation procedures in the traditional tuning process are avoided, and the tuning efficiency is improved. And meanwhile, a high-quality current-wavelength lookup table can be quickly constructed, and the method has wide engineering application prospects in optical communication, sensing and other scenes.

The invention discloses a directly-modulated wavelength scanning light source device which comprises a pulse control unit, a semiconductor laser, a thermoelectric refrigerating unit, a temperature measuring element, a temperature control system, a coupler, a wavelength calibration element, a photoelectric detector and a wavelength correction system. The pulse control unit drives the semiconductor laser, the semiconductor laser is connected with a first input end of the coupler, a first output end of the coupler is connected to the wavelength calibration element, a second input end of the coupler is connected with the photoelectric detector, and the photoelectric detector is connected with the pulse control unit. A second output end of the coupler is a wavelength scanning light source output end, and the photoelectric detector is connected with the wavelength correction system. The device realizes a light source in a wavelength scanning range from several nm to dozens of nm at a wavelength scanning rate as high as MHz and above, realizes wavelength scanning in each wave band range based on a directly modulated laser, and is beneficial for adapting to more optical fiber sensing high-speed measurement application occasions.

The invention discloses a rapid heating wavelength-adjustable laser chip integrated with a heat insulation pad and a preparation method, the rapid heating wavelength-adjustable laser chip comprises an epitaxial structure, a passivation layer, P-surface metal and N-surface metal, and the epitaxial structure comprises a substrate layer, a lower limiting layer, an active layer and an upper limiting layer from bottom to top in sequence; the active layer is set to be a passive area and an active area along the cavity length direction, a grating structure is arranged in the upper limiting layer, and the grating structure is arranged corresponding to the passive area and avoids the active area; the part, corresponding to the passive area, in the lower limiting layer is sacrificed to form a cavity, and a heat insulation material grows and is filled in the cavity to form a heat resistance cushion layer; and a ridge waveguide is formed on the front surface of the epitaxial structure. The heating efficiency of the chip is improved, the heating temperature can be accurately adjusted, and the overall structural strength of the chip is high.

The invention discloses a C-band tunable broadband light source system with a wavelength and power locking function. The C-band tunable broadband light source system comprises a tunable laser array chip, a main control module, a laser chip current driving module, a temperature control module, an optical splitter, a wavelength locking module and a power adjusting module, the temperature control module reads and adjusts the working temperature of the tunable laser array chip; the laser chip current driving module applies current excitation to each laser in the tunable laser array chip; emergent light of the tunable laser array chip is respectively transmitted to the wavelength locking module and the power adjusting module through the optical splitter; the wavelength locking module carries out wavelength locking on the emergent light based on two F-P etalon with the same response curve period and complementary response curve peak values; and the power regulation module adopts a PID algorithm to carry out power regulation and locking on the emergent light. According to the invention, any wavelength lasing can be realized in the C wave band, and the method has the advantages of rapidness, accuracy and the like in the aspect of wavelength and power deviation correction.

Embodiments of the present application relate to the technical field of optical sensing, and provide a laser array and a laser radar. The differential resistance of the laser array is adjustable, and the optical power of output emitted laser light is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer, and a second reflecting layer which are sequentially arranged in an epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer, and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, a light blocking layer is further provided on the side of the fourth reflecting layer away from the second active layer, and the projection of the light blocking layer on the second active layer overlaps the projection of the second oxidation hole on the second active layer; the first laser is electrically connected to the second laser.

The invention relates to a photoelectric integrated double-frequency laser for coherent wind measurement, which comprises a first light source module, a second light source module, a first coupler module, a second coupler module, a third coupler module, a first beam splitter module, a second beam splitter module, a third beam splitter module and a first balanced photoelectric detector module, a second balance photoelectric detector module, a modulator module, an optical phase-locked loop module and a transceiver. Based on the silicon-based optoelectronic chip technology and the photoelectric hybrid packaging technology on the structural level, the coupler, the beam splitter and the photoelectric detector are integrated on the silicon optical chip, and the silicon optical chip, the DFB chip, the coupling optical path, the electrical module and the like are packaged together by utilizing the photoelectric hybrid packaging technology, so that high-density integration is realized; a heterodyne digital optical phase-locked loop technology is applied to a system level, so that a specific frequency difference exists between output signal light and reference light, and pulse light with a high extinction ratio is generated in a modulator cascading mode. Compared with a conventional single-light-source system scheme, the heterodyne Doppler wind measurement laser radar system can greatly improve the integration level, reduce the power consumption and the cost, and is beneficial to mass production, and compared with a homodyne detection mode, heterodyne detection is higher in measurement speed, simpler in scheme and better in stability. The system has extremely high expansibility, and can be applied to systems of optical fiber sensing, laser remote sensing and cold atomic clocks through operations of replacing a transmitting-receiving device, modifying a control program and the like.

The invention discloses a blue-light semiconductor laser array dense spectrum beam combining device with a self-adaptive wavelength adjustment function, and belongs to the technical field of blue-light semiconductor laser. The device is characterized in that a first blue light array emits a wavelength-locked collimated laser beam; the first spectroscope splits the light beam to obtain a main light beam and an auxiliary light beam; the first polaroid adjusts the polarization state of the secondary light beam to be S polarization; the first transmission grating diffracts the S-polarized light beam, the S-polarized light beam is reflected by the first adjustable reflector and propagated along an original light path, after the S-polarized light beam passes through the first spectroscope, a transmission part is reflected by the first plane reflector and then passes through the first spectroscope, the transmission part enters the original light path to be modulated again, a reflection part and a main light beam are subjected to space beam combination, and target laser is output; the monitoring and adjusting system analyzes the wavelength and the laser quality of the target laser in real time, adjusts the angle of the first adjustable plane mirror according to the wavelength and the laser quality, and reflects the laser with the target wavelength. The effects of output beam quality improvement, laser volume compression and system reliability improvement are achieved.

The invention discloses a narrow linewidth laser frequency control device and method based on optical feedback discretization, and belongs to the technical field of laser control. In order to solve the problems of poor frequency stability and tuning range of an existing laser, a laser beam emitted by the laser is incident to an optical feedback assembly to generate front-cavity mirror transmission light; the optical heterodyne feedback adjusting assembly demodulates an electric signal corresponding to the transmission light of the cavity front mirror to obtain an error signal, and transmits the error signal to the high-voltage amplification control module end to control the PZT, so that the high-voltage amplification control module end controls the PZT according to the error signal to lock the laser frequency on the cavity mode frequency; and meanwhile, the laser controller changes the working current of the laser, so that the laser frequency is locked on each intrinsic cavity mode frequency of the optical resonant cavity, and a series of discrete wide-range stable locking frequencies are obtained under the control of the temperature control module.

A semiconductor laser (1) comprising a semiconductor body (2) with an active region (20) for generating radiation (8) and an optical interaction structure (3) with structural elements (30) is specified, wherein at least some of the structural elements (30) are arranged at different nominal center distances (35) to each other such that, during operation of the semiconductor laser (1) at a given operating point, local temperature differences in the optical interaction structure (3) reduce differences between the optical path lengths (39) that are assigned to the nominal center distances (35) of these structural elements (30). Furthermore, a method for manufacturing a semiconductor laser (1) is described.

A distributed feedback (DFB) laser apparatus has a distributed feedback (DFB) laser (650) comprising a DFB structure (511), a heater (508) arranged to heat the DFB structure to change a lasing frequency of the DFB laser and a heater circuitry hard-wiring configuration (556) hard-wired to route power to a selected portion (616) of the heater such that heating the selected portion (616) changes refractive index of the DFB structure (511) at a position along the DFB structure corresponding to the selected portion, thereby adjusting the lasing frequency.

The invention relates to the technical field of laser, in particular to a high-signal-to-noise-ratio modulation transfer spectrum frequency stabilization light path system. The system comprises a laser, an optical isolator, a first half-wave plate, a first polarization splitting prism, an optical fiber coupler, a second half-wave plate, a second polarization splitting prism, a first reflecting mirror, an electro-optical modulator, a second reflecting mirror and a third polarization splitting prism, wherein the first half-wave plate is used for adjusting the power of frequency stabilization light; the second half-wave plate is used for adjusting the power ratio of pump light to probe light; a first quarter-wave plate, a second quarter-wave plate, an atomic gas chamber and a photoelectric detector; after the output of the laser is isolated by the optical isolator, the first half-wave plate and the first polarization splitting prism are matched to adjust the frequency stabilization total beam power to about 5mW; the pump light is modulated by the electro-optical modulator, the probe light and the pump light reversely interact in the atomic gas chamber in an anti-phase circular polarization state, and the signal-to-noise ratio of a modulation transfer signal and the stability of a frequency stabilization system are remarkably improved.

A variable light spot lens structure and a laser device. The variable light spot lens structure comprises a fixing module (10) and multiple replacement modules (20); the fixing module (10) comprises a fixing base (11), a light source (12) arranged in the fixing base (11), a fast-axis compression mirror arranged on a light exit side of the light source (12), and a compression unit (13) fixed on the fixing base (11) and located on a light exit side of the fast-axis compression mirror; the multiple replacement modules (20) are replaceably arranged on a light exit side of the fixing module (10), and each replacement module (20) comprises an optical head (21) and a shaping unit; the optical head (21) of each replacement module (20) is detachably connected to the fixing base (11) of the fixing module (10); a light beam emitted by the light source (12) undergoes fast-axis compression by the fast-axis compression mirror and compression by the compression unit (13) and then is incident to the replacement modules (20), and exits after being shaped by the shaping units of the replacement modules (20); and light spots on a receiving surface that are obtained by means of light beams exiting from any two replacement modules (20) have different sizes. Such a variable light spot lens structure can output multiple small-size light spots of different specifications, and improve the application flexibility of a laser module.

An ultraviolet (UV) light source includes a light emitting element that is configured to generate light of a first frequency, a nonlinear optical element that is configured to receive the light of the first frequency from the light emitting element and generate UVC or far-UVC light of a second frequency from the light of the first frequency, and an output coupling element that is configured to selectively outcouple the UVC or far-UVC light from the nonlinear optical element as output light. Related light sources and fabrication methods are also discussed.

A first conductive pattern (13) is provided on an upper surface of the submount (7). A GND pattern (9) is provided on a lower surface of the submount (7). A lower surface electrode (21) of a capacitor (3) is bonded to the first conductive pattern (13) with solder (22). An upper surface electrode (23) of the capacitor (3) is connected to a light emitting device (2). A terminating resistor (4) is connected to the first conductive pattern (13). The first conductive pattern (13) has a protruding portion (25) which protrudes outside from the capacitor (3) in planar view. A width of the protruding portion (25) is narrower than a width of the capacitor (3).

A semiconductor laser and a photonic nonlinear circuit chip are integrated together. The nonlinear circuit chip may include a nonlinear waveguide configured or controlled to enable sum-frequency generation, difference-frequency generation, second-harmonic generation, parametric amplification, or other nonlinear processes. Coupling between the semiconductor laser and the nonlinear circuit may be optimized by mode-matching, while back-reflections are minimized by diverting the reflections so that optical isolators are not needed. The integration of the semiconductor laser and the nonlinear photonic circuit chip enables nonlinear optical processing using a compact and scalable platform in a flexible manner that is compatible with different types of semiconductor lasers and different operation regimes. An additional input is provided so users can input an optical signal into the photonic chip for processing therein. In some examples, the photonic chip is configured with pump resonators, such as racetrack resonators. Method and device examples are described herein.