9408 results about "Resonant cavity" patented technology

In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Certain embodiments include interferometrically tuned photovoltaic cells wherein reflection from interfaces of layered photovoltaic devices coherently sum to produce an increased field in an active region of the photovoltaic cell where optical energy is converted into electrical energy. Such interferometrically tuned or interferometric photovoltaic devices (iPV) increase the absorption of optical energy in the active region of the interferometric photovoltaic cell and thereby increase the efficiency of the device. In various embodiments, one or more optical resonant cavities and/or optical resonant layers is included in the photovoltaic device to increase the electric field concentration and the absorption in the active region.

An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first (“active”) resonator cavity of a high power coupled cavity surface emitting laser device. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the active cavity but is contained within a second (“passive”) resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region. In one embodiment, non-linear optical material inside each passive cavity of an array converts an IR fundamental wavelength of each laser device to a corresponding visible harmonic wavelength, and the external output cavity mirror comprises a Volume Bragg grating (VBG) or other similar optical component that is substantially reflective at the fundamental frequency and substantially transmissive at the harmonic frequency. The VBG used in an array of such devices may be either flat, which simplifies registration and alignment during manufacture, or may be configured to narrow the IR spectrum fed back into the active resonant cavity and to shape the spatial mode distribution inside the cavity, thereby reducing the size of the mode and compensating for any deformations in the semiconductor array.

A desired pattern may be cut into a stent preform by impinging a laser beam onto the stent preform. The laser beam is formed using a laser system comprising a resonator cavity for resonating laser radiation, a gain medium contained in the resonator cavity, a pump for periodically pumping the gain medium and an electro-optical modulator in communication with the resonator cavity. The laser system produces a radiation pulse for each pump period. Each radiation pulse is conditioned by suppressing at least a portion of the pulse. The pulse may also be modulated with an electro-optical modulator to produce a pulse train of ordered pulses of radiation. Each pulse train is output from the optical cavity as an output laser beam which is directed at the stent preform to cut a desired pattern in the stent preform.

A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.

An assay system having a channel bounded by first and second reflective surfaces adapted to accommodate a fluid material therebetween and defining a plurality of regions in an array between those surfaces with each region defining a resonant cavity and adapted to receive a capturing material on a surface thereof whereby a source of radiation illuminates each region to provide a standing wave of radiation of within the cavity indicative of binding of said capturing agent to material under investigation, a binding thereof being detected in response to radiation from each cavity indicative of a change in the standing wave pattern.

A solid state laser includes a high absorption coefficient solid state gain medium such as Nd:YVO4 that is side pumped with a semiconductor laser diode array. The resonant cavity of the solid state laser is positioned so that the TEM00 mode is spaced from the face of the laser through which the laser is pumped by a distance sufficient to reduce diffraction losses but sufficiently near to allow coupling of pump light into the gain mode. The gain medium, the doping level of the gain medium, and the operating temperature of the pump laser are selected to efficiently couple pump light into the gain mode. The pump laser is positioned to side pump the gain medium without collimating or focusing optics between the pump laser and the face of the gain medium. A gap between the pump laser and the gain medium is empirically selected to match the angular extent of the pump laser output light to the height of the gain mode at the position of the gain mode fixed to optimize coupling and diffraction losses.

A MEMS microphone module having an application specific IC and a microphone chip is disclosed. The application specific IC has a plurality of first vias and a plurality of first pads, and the first vias are connected to the first pads. The microphone chip has a resonant cavity, a plurality of second vias and a plurality of second pads, and the second vias are connected to the second pads. The microphone chip is disposed on a first surface of the application specific IC with an opening of the resonant cavity facing toward a first surface of the application specific IC. The second conductive vias of the microphone chip are also electrically connected to the first vias of the application specific IC. By placing the microphone chip on the first surface of the application specific IC, the present invention could reduce the package size and increase the reliability of the package.

An analyte stage for use in a spectroscopy system includes a tunable resonant cavity that is capable of resonating electromagnetic radiation having wavelengths less than about 10,000 nanometers, a substrate at least partially disposed within the cavity, and a Raman signal-enhancing structure at least partially disposed within the tunable resonant cavity. A spectroscopy system includes such an analyte stage, a radiation source, and a radiation detector. Methods for performing Raman spectroscopy include using such analyte stages and systems to tune a resonant cavity to resonate Raman scattered radiation that is scattered by an analyte.

Devices incorporating an interferometric stack configured to reflect a certain color and transmit longer wavelengths through the interferometric stack. In one example, a color filtering includes two partial reflectors comprising an extinction coefficient that is less than about one at wavelengths greater than about 800 nm. The two partial reflectors define an optical resonant cavity forming an interferometric stack configured to reflect color and transmit some electromagnetic waves. In another example, a photovoltaic device includes two photovoltaic active layers that act as partial reflectors to form an interferometric stack. The photovoltaic device is configured to reflect color and produce power.

Devices incorporating an interferometric stack in a photovoltaic device and method of manufacturing a photovoltaic device comprising an interferometric stack. In one example, a photovoltaic device includes a photovoltaic active layer, an absorber layer, and a first optical resonant cavity layer. The optical resonant cavity layer is disposed between the absorber layer and photovoltaic active layer forming an interferometric modulator. The interferometric modulator is configured to reflect a uniform color. In another example, a method of manufacturing a photovoltaic device includes depositing a photovoltaic active layer on an interferometric stack. The interferometric stack can include an absorber layer and a first optical resonant cavity. The photovoltaic active layer is deposited on the optical resonant cavity and the formed photovoltaic device is reflects a uniform color.

A method of generating pulsed coherent radiation, comprises the step of generating high harmonic pulses by an interaction of laser light pulses with a non-linear medium contained in a resonant cavity, wherein the non-linear medium is arranged in an environment of reduced pressure. Furthermore, a radiation source of generating pulsed coherent radiation is described, comprising a laser pulse source for generating laser light pulses, a resonant cavity including a non-linear medium for generating high harmonic pulses by an interaction of the laser light pulses with the non-linear medium, wherein the non-linear medium is arranged in an environment of reduced pressure.

A VCSEL waveguide grating coupler is provided such that a first and second mirror are positioned to define a resonant cavity between them. The waveguide grating coupler further includes a waveguide having a first grating formed as a part of the waveguide to couple light of a first polarization mode into the waveguide. A second grating is formed on the waveguide grating coupler and is orthogonal to the first grating. The second grating is operative to enhance the light coupled to the waveguide by creating a loss difference between light of the first polarization mode and light of a second polarization mode, so that light of the first polarization mode lases preferentially within the VCSEL.

An optical sensor system for providing an output signal in response to a sensed parameter comprising: an optical signal source for generating an input optical signal; a sensing element in optical communication with the optical signal source, the sensing element comprising at least two resonant cavity loops exhibiting a common resonant frequency near at least one frequency of the input optical signal, at least one of the resonant cavity loops being exposed to an external parameter, the external parameter modifying the resonant frequency of the at least one exposed resonant cavity loop thereby modifying an optical output signal; and a detector in optical communication with the sensing element, the detector detecting any modification in the output optical signal in response to the sensed parameter.

Sequenced pulses of light from an excitation laser with at least two resonator cavities with separate output couplers are directed through a light modulator and a first polarzing analyzer. A portion of the light not rejected by the first polarizing analyzer is transported through a first optical fiber into a first ignitor laser rod in an ignitor laser. Another portion of the light is rejected by the first polarizing analyzer and directed through a halfwave plate into a second polarization analyzer. A first portion of the output of the second polarization analyzer passes through the second polarization analyzer to a second, oscillator, laser rod in the ignitor laser. A second portion of the output of the second polarization analyzer is redirected by the second polarization analyzer to a second optical fiber which delays the beam before the beam is combined with output of the first ignitor laser rod. Output of the second laser rod in the ignitor laser is directed into the first ignitor laser rod which was energized by light passing through the first polarizing analyzer. Combined output of the first ignitor laser rod and output of the second optical fiber is focused into a combustible fuel where the first short duration, high peak power pulse from the ignitor laser ignites the fuel and the second long duration, low peak power pulse directly from the excitation laser sustains the combustion.

A device contains at least one wavelength-tunable multilayer interference reflector controlled by an applied voltage and at least one cavity. The stopband edge wavelength of the wavelength-tunable multilayer interference reflector is preferably electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode (or a composite cavity mode), resulting in a modulated transmittance of the multilayer interference reflector. A light-emitting medium is preferably introduced in the cavity or in one of the cavities permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply forward or reverse bias and may operate as a vertical cavity surface emitting light-emitter or modulator or as an edge-emitting light emitter or modulator. Using a multilayer interference reflector containing tunable section allows also obtaining a wavelength-tunable laser or a wavelength-tunable resonant cavity photodetector in the case where the optical field profile in the active cavity or cavities is affected by the stopband wavelength shift. Adding additional modulator sections enables applications in semiconductor optical amplifiers, frequency converters or lock-in optical amplifiers.

A standing wave pump in which a standing compression wave is produced by a pair of diametrically opposing transducers. The vibrating surfaces of the transducers are oscillated at a frequency sufficient to generate a substantially cylindrical compression wave having substantially planar wave fronts between the transducer pair. The length of pump housing is made to be equal to an integer times half the wavelength of the compression wave and the pump housing acts as a resonant cavity having a standing wave pattern set up in it. Waves are simultaneously produced and reflected by the oscillating surface and are superimposed upon one another and travel to the opposing oscillating surface where this process is repeated, substantially multiplying the intensity of the standing compression wave, which provides a stored-energy effect. The high-intensity standing compression wave has pressure nodes and antinodes, whose pressure differential is used to pump a medium through inlets and outlets advantageously located at the nodes and antinodes.

A synchrocyclotron includes magnetic structures that define a resonant cavity, a source to provide particles to the resonant cavity, a voltage source to provide radio frequency (RF) voltage to the resonant cavity, a phase detector to detect a difference in phase between the RF voltage and a resonant frequency of the resonant cavity that changes over time, and a control circuit, responsive to the difference in phase, to control the voltage source so that a frequency of the RF voltage substantially matches the resonant frequency of the resonant cavity.

A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

A particulate filter control system and method for controlling the same is disclosed. The particulate filter load monitoring system may transmit radio frequency signals through the resonant cavity and filter medium across a frequency range sufficient to generate more than one resonant mode. The system may contain additional sensors for monitoring additional exhaust characteristics and parameters. Further, a control unit may be configured to determine the amount of material accumulated in the particulate filter, detect failures and malfunctions of the exhaust after-treatment system and its associated components, and initiate an action based on the amount of material accumulated in the particulate filter, the determination of a system failure or malfunction, or input from one or more exhaust sensors.

The invention relates to a sensing method with an optical-fiber Bragg grating laser device. An optical-fiber Bragg grating is used as a reflector of the resonant cavity, an active optical fiber capable of generating sufficient gains is added, and a double wavelength/multiple wavelength optical-fiber Bragg grating laser device is formed under the action of a pump light source and used as a sensor. When the outside strain, temperature and other physical quantities act on the sensing system, the beat signal frequency among the double wavelength or multiple wavelength laser can shift, and counter stress, temperature and other physical parameters can be measured precisely by detecting the beat signal frequency information. The invention has the advantages of simple manufacture, stable and reliable operation, stable measurement result and high precision, and is free from the interference of light intensity, polarization and other optical information quantities. The multipoint distribution sensing measurement can be realized in a frequency-division multiplexing mode. An electrooptical modulator is added before the spectrum analyzer starts detection so as to randomly adjust the beat signal frequency, thereby greatly reducing the spectral range of the spectrum analyzer and reducing the detection cost.

A photon detector is obtained by using the intersubband absorption mechanism in a modulation doped quantum well(s). The modulation doping creates a very high electric field in the well which enables absorption of input TE polarized light and also conducts the carriers emitted from the well into the modulation doped layer from where they may recombine with carriers from the gate contact. Carriers are resupplied to the well by the generation of electrons across the energy gap of the quantum well material. The absorption is enhanced by the use of a resonant cavity in which the quantum well(s) are placed. The absorption and emission from the well creates a deficiency of charge in the quantum well proportional to the intensity of the input photon signal. The quantity of charge in the quantum well of each detector is converted to an output voltage by transferring the charge to the gate of an output amplifier. The detectors are arranged in the form of a 2D array with an output amplifier associated with the entire array or a row of the array as in the known charge coupled devices, or a separate amplifier could be dedicated to each pixel as in the known architecture of the active pixel device. This detector has the unique advantage of near room temperature operation because the dark current is limited to the generation across the semiconductor bandgap and not the emission over the quantum well barrier. The detector also has the advantage that the readout circuitry is implemented monolithically by the HFETs formed in the GaAs substrate simultaneously, with the detecting elements.