93results about How to "Fast etch" patented technology

A method and apparatus for selectively etching doped semiconductor oxides faster than undoped oxides. The method comprises applying dissociative energy to a mixture of nitrogen trifluoride and hydrogen gas remotely, flowing the activated gas toward a processing chamber to allow time for charged species to be extinguished, and applying the activated gas to the substrate. Reducing the ratio of hydrogen to nitrogen trifluoride increases etch selectivity. A similar process may be used to smooth surface defects in a silicon surface.

A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

Methods and conductive interconnect structures are provided for preventing cracks in a dielectric layer on a substrate. Substantially half cylindrical or cylindrical trench openings are formed within at least one dielectric layer, which are then filled with a high conductivity metal for forming substantially half cylindrical or cylindrical wires. The rounded bottom portions of the substantially half cylindrical wires, or the rounded bottom and top portions of the substantially half cylindrical wires, avoid any propagation points for starting cracks in the dielectric layer, as compared to conventional rectangular conductors having angled edges, which in fact are propagation points for initiating cracks. The substantially half cylindrical or cylindrical wires also reduce the line-to-line capacitance between neighboring wires, substantially eliminate any high stress points in the dielectric layer, reduce mechanical stresses induced on the IC and increase the overall mechanical strength of the IC.

Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

A method for etching features in a silicon oxide based dielectric layer over a substrate, comprising performing an etch cycle. A lag etch partially etching features in the silicon oxide based dielectric layer is performed, comprising providing a lag etchant gas, forming a plasma from the lag etchant gas, and etching the etch layer with the lag etchant gas, so that smaller features are etched slower than wider features. A reverse lag etch further etching the features in the silicon oxide based dielectric layer is performed comprising providing a reverse lag etchant gas, which is different from the lag etchant gas and is more polymerizing than the lag etchant gas, forming a plasma from the reverse lag etchant gas, and etching the silicon oxide based dielectric layer with the plasma formed from the reverse lag etchant gas, so that smaller features are etched faster than wider features.

A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched. At the masking level, the greater propensity for backside and lateral erosion of certain structures away from substrate anchor sites is exploited so that, at the completion of the etch process, suspended structures have acquired their respective desired widths.

A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.

The invention relates to a fluid medium for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and at least one organic compound with low volatility. Systems of this type can be used either for cleaning, the removal of defects and the texturing of wafer surfaces in a single etching step or, exclusively, for the texturing of silicon wafers having different surface qualities, such as wafers which are cut by a wire saw and exhibit high surface degradation or chemically polished surfaces having a minimal number of defects.

A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

In a method for manufacturing an inkjet recording head which includes a pressure generation chamber supplied with ink fluid and a nozzle opening leading to the pressure generation chamber, the method includes: (a) forming a first trench which serves as the pressure generation chamber on a first surface of a first substrate; (b) forming a second trench which serves as the nozzle opening on a bottom surface of the first trench; (c) forming a sacrificial film on the first trench and the second trench; (d) forming a diaphragm on the sacrificial film as well as on the first surface of the first substrate; (e) forming a piezoelectric element on the diaphragm; (f) grinding a second surface of the first substrate so as to open a bottom surface of the second trench; (g) forming an opening which exposes the sacrificial film on the first surface of the first substrate; and (h) removing the sacrificial film through the opening.

Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

A method for forming a multilayer includes a process for forming a first conductive layer on a substrate; a process for forming a first insulating layer on the first conductive layer; a process for forming a second conductive layer on the first insulating layer and patterning the deposited second conductive layer; a process for forming a second insulating layer over the substrate so as to cover the patterned the second conductive layer; a process for forming a third insulating layer on the second insulating layer, wherein an etching speed of the third insulating layer is faster than that of the second insulating layer; and a process for forming contact holes at once that expose at least a part of the first conductive layer to the first insulating layer, the second insulating layer and the third insulating layer.

Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.

The invention relates to a device for dry etching, which comprises a cavity, a base platform erected at the bottom of the cavity, a gas intake device and a gas extractor. The device also comprises atleast one assistant gas extracting device which is arranged on the lateral surface of the cavity and is used for controlling the contact density of an etching gas and a substrate by pumping the etching gas in the cavity out from the upper part of the base platform. When the device for the dry etching etches the materials of a-Si, SiNx or Mo and the like, the assistant gas extracting device is turned off; when the device etches the materials of Al and the like which are sensitive to the etching gas, the assistant gas extracting device is turned on; besides, the device controls the contact density of the etching gas and the substrate by pumping the etching gas in the cavity out from the upper part of the base platform, thus a gas adjusting seat is not needed to be assembled or disassembled when one device for the dry etching is used for etching various materials, and the production efficiency and the production speed are effectively improved.

Optical fiber probe tips and methods for fabricating the same are presented. One method entails immersing a distal end of an optical fiber having a cladding and a core into an etching solution and simultaneously etching the cladding and the core using the etching solution for tapering the cladding and the core to form a tapered cladding and a tapered core tip. The optical fiber probe tips are suitable for near-field, scanning, optical microscopy (NSOM).

An aspect of the present invention relates to a method of etching a surface layer portion of a silicon wafer comprising: positioning the silicon wafer within a sealed vessel containing a mixed acid A of hydrofluoric acid and sulfuric acid so that the silicon wafer is not in contact with mixed acid A; introducing a solution B in the form of nitric acid containing nitrogen oxides into the sealed vessel and causing solution B to mix with mixed acid A; and vapor phase decomposing the surface layer portion of the silicon wafer within the sealed vessel within which mixed acid A and solution B have been mixed.

The invention relates to the technical field of laser antenna etching, in particular to a laser etching method for an RFID tag antenna and a system for implementing the method. The system comprises a laser, a beam expanding mirror, a galvanometer, a focusing lens, cooling equipment and a worktable; a tag antenna to be machined is placed on the cooling equipment; a plastic layer at the bottom of the RFID tag antenna to be machined is in close contact with the cooling equipment; the RFID tag antenna to be machined and the cooling equipment are fixed to the worktable together through a clamp; a laser beam which is output by the laser is expanded through the beam expanding mirror, is deflected through the galvanometer, is finally focused through the focusing lens and acts on an aluminium foil plating layer on the upper surface of the tag antenna to be machined. A non-woven fabric water absorbing pad is arranged at the bottom of the RFID tag antenna, so that the machining temperature of the plastic layer is effectively reduced, the plastic layer is prevented from being molten, and a laser etching technology can be applied to the field of RFID tag antennae.