41 results about "Deep reactive-ion etching" patented technology

A solid-state electronic miniature clock featuring a multi-layered silicon chip. A first circuit layer includes an electron paramagnetic resonance sensor, while the second layer comprises a silicon substrate with an etched trench housing single atom-doped fullerene molecules. Magnets are strategically placed on the silicon substrate and a third circuit layer to establish a baseline magnetic field. The chip incorporates through silicon vias (TSVs) filled with copper, forming a copper coil for enhanced antenna performance. Thermal management is achieved through vacuum cavities for isolation, strategically placed metals for heat generation, and thermo-electric materials, such as a bilayer of Bi$_2$Te$_3$ and Bi$_2$Se$_3$, for temperature regulation. A feedback loop monitors and adjusts the temperature, ensuring stability. Fabrication techniques include Deep Reactive Ion Etching (DRIE), electrochemical deposition, and photolithographic patterning, providing precise control over the chip's structure and functionality.

The invention relates to the technical field of resonators, and discloses an MEMS resonator and a composite preparation method thereof.The composite preparation method of the MEMS resonator comprises the steps that a highly-doped first monocrystalline silicon layer is formed to serve as a supporting substrate; forming a piezoelectric material layer on the first monocrystalline silicon layer; forming a seed layer on the piezoelectric material layer at a first set rate, epitaxially forming a main body layer on the seed layer at a second set rate, and compounding the seed layer and the main body layer to form a highly doped second monocrystalline silicon layer; deep reactive ion etching is carried out on the laminated structure layer constructed based on the first monocrystalline silicon layer, the piezoelectric material layer and the second monocrystalline silicon layer, a resonator body, a connecting beam and an anchoring part are formed, and the resonator body is arranged in a suspended mode and connected with the anchoring part through the connecting beam. According to the invention, the electromechanical coupling efficiency and the quality factor of the MEMS resonator are improved, and the temperature stability of the MEMS resonator is ensured.

The invention discloses an embedded multilayer interconnection electronic packaging structure and a preparation technology thereof, and the technology comprises the steps: providing an insulating substrate, forming a miniature caulking groove at a preset position of the insulating substrate, placing an electronic assembly in the caulking groove, superposing a dielectric layer and a conductive layer on the insulating substrate and the embedded electronic assembly layer by layer through employing a deposition technology, a multi-layer interconnection network is constructed, a vertical interconnection channel is formed through a deep reactive ion etching technology, a thermal management structure is introduced, a graphene-based cooling fin is integrated in the multi-layer interconnection network, packaging is carried out, a protective coating covers the multi-layer interconnection network, a connecting bonding pad of a leading-out end is defined, and the embedded multi-layer interconnection electronic packaging structure is formed; a high-density and multi-layer interconnection network is constructed by embedding and mounting the electronic component in the substrate and utilizing a method of depositing the dielectric layer and the conductive layer, so that miniaturization and high integration of the electronic equipment are realized, the requirements of compact size and heat dissipation performance are considered, and a solution of high-density interconnection and efficient heat dissipation is provided.

The invention discloses a CoWoS packaging technology for a GPU chip, and the technology comprises the following steps: S1, forming a glass substrate with a glass wafer as a temporary carrier, and coating a temporary bonding glue layer; s2, using a deep reactive ion etching technology to form a copper through silicon via, depositing an insulating layer and a barrier layer, patterning a metal wiring layer, and using a Cu Pin process to optimize TSV manufacturing to form a copper column interconnection structure; s3, forming a first EMC layer by using an epoxy molding compound; s4, the first EMC layer is thinned and flattened, the upper end face of the copper column is exposed, and the composition is defined as an intermediate layer; s5, making micro-bumps on the front surface of the interposer, and forming an insulating layer on the surface; and S6-S13, sequentially completing chip stacking, plastic packaging, glass substrate removal, C4 bump manufacturing, film pasting, cutting, butt joint and BGA ball implantation. According to the process, the TSV process is simplified through the CuPin process, the equipment investment is reduced by 40%, the productivity is improved by 30%, the process is compatible with the existing CoWoS-S process, and core equipment does not need to be transformed.

An intravascular pressure sensor assembly is disclosed herein that is produced in part using photolithography and DRIE solid-state device production processes. Using DRIE production processes facilitates a number of features that could not be readily incorporated in sensor chips fabricated using mechanical saws. In accordance with a first feature, sensor chips are created with non-rectangular outlines. The sensor chip includes a widened portion that substantially abuts an inner wall of a sensor housing, and a cantilevered portion that is relatively narrow in relation to the widened portion. The non-rectangular outline of the sensor chip is formed using photolithography in combination with DRIE processing. In accordance with another feature, the sensor chip is positioned width-wise in the housing, thereby reducing a required length for the housing. In accordance with yet another feature, the sensor chip comprises one or more cutouts for receiving signal wires for connection to signal lead lines on the sensor chip. The outline of the sensor chip and the cutouts are formed using photolithography in combination with DRIE processing.

The invention discloses a flexible micro-nano cross-scale integrated metasurface single-cell sensor and a preparation method thereof, and relates to the field of biosensing. The sensor comprises a PDMS flexible substrate layer, a micro-nano cross-scale structure layer and a gold metal film layer, the micro-nano cross-scale structure layer adopts a nesting design of a micron-scale single cell capture unit and a nano-scale plasmon structure, so that single cell precise limiting and local electromagnetic field multi-stage enhancement are realized, and the problems of poor adaptability and low sensitivity of a traditional rigid sensor are solved. According to the preparation method, a silicon-based template-replication forming-magnetron sputtering process is adopted, a silicon template is prepared through deep ultraviolet lithography and deep reactive ion etching, a gold film is deposited after a flexible micro-nano structure is copied by PDMS, and large-scale mass production of the sensor is realized. The sensor has excellent flexibility, biocompatibility and high detection sensitivity, can realize single cell level accurate and in-situ detection, is suitable for the scenes of early disease screening, cell biological analysis, personalized medical treatment and the like, and is simple in process and low in cost.

The invention provides an MEMS differential capacitive z-axis accelerometer without cross-axis interference and a preparation method thereof, and relates to the technical field of sensors, the accelerometer adopts two (111) crystal orientation silicon wafers to be bonded to form a sandwich structure, the accelerometer comprises a first silicon wafer provided with a first fixed electrode and a first cavity, and a second silicon wafer provided with a second fixed electrode and a second cavity, and a movable mass block, an elastic beam, a second cavity, a movable electrode and a second fixed electrode are integrated in the second silicon wafer. The areas of the upper fixed electrode and the lower fixed electrode are both larger than the area of the middle movable electrode, so that the effective sensing area is constant, and cross axis interference is eliminated from the structure source. The preparation method combines key processes of deep reactive ion etching, TMAH anisotropic wet etching and gold-gold thermocompression bonding. The method has the advantages of high sensitivity, excellent linearity and strong common-mode rejection capability, and is suitable for the field of inertial measurement with strict requirements on precision and stability.

The invention discloses a preparation method of a near-infrared achromatic super lens based on a nanoimprint technology, and relates to the technical field of micro-nano manufacturing. The preparation method comprises the following steps: 1, designing a target super lens by using finite element simulation software based on a time domain finite difference method, a particle swarm algorithm and a scalar diffraction algorithm; 2, preparing a silicon female die corresponding to the super lens according to the designed target super lens parameters by using electron beam lithography and deep reactive ion etching; 3, carrying out surface fluorination treatment on the silicon female die; and 4, preparing a corresponding sub-mold according to the silicon female mold, carrying out imprinting by using a nano imprinting technology and the sub-mold, and finally, etching the a-Si layer on the surface of the substrate through deep reactive ion etching by taking imprinting glue as an etching mask to obtain the super lens. According to the invention, the nanoimprint technology can be used for manufacturing the near-infrared achromatic superlens, so that the near-infrared achromatic superlens gets rid of dependence on a high-precision photoetching machine.

The application relates to the technical field of resonators, and discloses a MEMS resonator and a preparation method thereof. The preparation method of the MEMS resonator comprises the following steps: forming a first wafer, wherein the first wafer at least comprises a first monocrystalline silicon layer; forming a second wafer, wherein the second wafer at least comprises a second monocrystalline silicon layer and a piezoelectric material layer located on the second monocrystalline silicon layer; bonding the first wafer and the second wafer to form a laminated structure comprising the first monocrystalline silicon layer, the piezoelectric material layer and the second monocrystalline silicon layer, and performing high-doping treatment on the first monocrystalline silicon layer and the second monocrystalline silicon layer before or after bonding; and performing deep reactive ion etching on the laminated structure to form a resonator body, a connecting beam and an anchor, wherein the resonator body is arranged in a suspended mode, and the resonator body is connected with the anchor through the connecting beam. The application improves the electromechanical coupling efficiency and the quality factor of the MEMS resonator, and guarantees the temperature stability of the MEMS resonator.

The invention relates to a method for transferring a silicon film. The method comprises the following steps of: preferably selecting an SOI (Silicon On Insulator) substrate; coating photoresist on the surface of the silicon substrate for photoetching; deep reactive ion etching is carried out, a channel leading to the buried oxide layer is etched, and photoresist removing and cleaning are carried out after etching is finished; putting the SOI substrate into hydrofluoric acid, wherein the hydrofluoric acid enters the buried oxide layer through the channel to corrode SiO2; pressing the flexible substrate on the top silicon, and separating the top silicon from the surface of the silicon substrate; and pressing the flexible substrate with the top layer silicon on the diamond according to one surface of the top layer silicon, and removing the flexible substrate to realize the transfer of the silicon film. The high-quality silicon film can be obtained at normal temperature and normal pressure, the technological process is simple, the cost is low, the success rate is high, and the method has good application prospects.

The invention relates to a multi-layer stacking packaging method of edge AI computing and storage chips and related equipment, and the method comprises the following steps: obtaining a preset function demand of the edge AI computing and storage chips, and determining a chip architecture of the edge AI computing and storage chips and a sequence arrangement corresponding to the chip architecture based on the function demand; carrying out TSV etching on a preset wafer through a deep reactive ion etching technology to obtain a through hole array wafer; cutting the through hole array wafer to obtain an independent cutting chip; performing cooling channel construction on the independent cutting chip to obtain a cooling function chip; carrying out multi-chip integration and packaging on the cooling function chips based on the chip architecture and the sequential arrangement corresponding to the chip architecture to obtain edge AI calculation and storage chips; the technical problems that heat in the chips is difficult to dissipate and the chips are easily overheated due to the fact that the heat dissipation channels become long when the stacked chips are close to each other are solved.

The invention discloses a method for processing a special-shaped cavity structure in a silicon-based terahertz circuit, which comprises the following steps of: firstly, determining the shape and parameters of an upper-layer cavity of the special-shaped cavity structure in the silicon-based terahertz circuit, and processing the upper-layer cavity and a lower-layer structure of the special-shaped cavity structure in the silicon-based terahertz circuit; and finally, bonding the processed upper-layer cavity structure with the lower-layer structure to complete the processing of the special-shaped cavity structure in the silicon-based terahertz circuit. According to the scheme, the hard mask silicon oxide is patterned twice according to different depths of the cavities in the processing process of the upper-layer cavity, finally, the deep reaction plasma etching equipment is utilized to complete etching of two steps with different depths in one step, the process steps are reduced by adopting an All-In-One mode, the process efficiency is improved, and the process cost is reduced. And the situation of side wall damage caused by multiple times of etching of multiple steps is also avoided.

The invention provides a measuring method of an ocean optical fiber temperature sensing unit with a cover-type silicon-based structure. The unit comprises a single-mode optical fiber core, a single-mode optical fiber cladding, the cover-type silicon-based structure and polydimethylsiloxane. According to the method for measuring the ocean optical fiber temperature sensing unit of the silicon-based structure, the silicon substrate is etched through deep reactive ion etching, it is guaranteed that the surface of the silicon substrate is smooth, polydimethylsiloxane sensitive to the temperature is injected into the hollow-core cover-type silicon-based structure, optical path difference estimation is achieved through Buneman frequency estimation, and the optical path difference is accurately measured. The demodulation resolution of temperature sensing is improved, and the demodulation operand is reduced. According to the invention, a complex sensing probe and a demodulation algorithm are not needed, a mapping relation between the ocean temperature signal and the optical fiber sensor is established, and rapid and high-precision detection of the ocean temperature signal is realized.

The application provides an infrared thermoelectric array and a preparation method thereof. The method comprises the following steps: providing a substrate with infrared thermocouples arranged in an array on the front surface; forming a patterned dielectric layer and a release groove etching window on the back surface of the substrate, wherein the dielectric layer comprises an outer dielectric layer and an inner dielectric layer; forming a photoresist layer on the outer dielectric layer; etching the substrate to a first preset depth by deep reactive ion etching through the release groove etching window; removing the inner dielectric layer; and etching the substrate exposed on the inner part of the outer dielectric layer by deep reactive ion etching to form a plurality of bosses arranged in an array. The infrared thermoelectric array prepared by the method has reduced thermal conductivity and reduced risk of film rupture. In addition, the bosses can quickly conduct heat, so that the temperature of the cold junction area is consistent with the ambient temperature. When the bosses are etched, only the side etching of the remaining substrate needs to be considered, which greatly reduces the influence of side etching on the bosses, thereby greatly reducing the size of the bosses and improving the array integration.

The teachings of the present disclosure enable rosette strain gages that can be cost-effectively produced in high volume with substantially uniform performance. Rosette strain gages in accordance with the present disclosure comprise a plurality of semiconductor strain gages that are sculpted from a device layer of a semiconductor-on-insulator wafer using deep reactive ion etching, yielding very good control over their electrical properties and physical dimensions. The strain gages are provided to an automated assembly system while attached to a frame via one or more sprues that are configured to ease their removal by the automated assembly system. The strain gages are mounted on a rosette substrate having an arrangement of contact pads and traces for connecting pairs of contact pads to different gages. The materials of the rosette substrate and strain gages are selected to efficiently transfer strain from an object under test to the strain gages.

The present disclosure relates to a MEMS structure comprising a stator having stator comb teeth and a rotor having rotor comb teeth, where the stator comb teeth and the rotor comb teeth are interlaced with each other and form interlaced rows, and in at least some portions of the interlaced rows where the aspect ratio is expected to change abruptly, the gaps between the comb teeth are gradually increased. An advantage of the arrangement structure of the present disclosure is that an undesirable fringe effect is eliminated during the deep reactive ion etching process, and a high quality MEMS structure is achieved.

The invention relates to the technical field of resonators, and discloses an MEMS resonator and a preparation method thereof, and the preparation method comprises the steps: forming a first wafer which at least comprises a first monocrystalline silicon layer; forming a second wafer, wherein the second wafer at least comprises a second monocrystalline silicon layer and a piezoelectric material layer located on the second monocrystalline silicon layer; bonding the first wafer and the second wafer to form a laminated structure at least comprising a first monocrystalline silicon layer, a piezoelectric material layer and a second monocrystalline silicon layer, and performing high doping treatment on the first monocrystalline silicon layer and the second monocrystalline silicon layer before or after bonding; deep reactive ion etching is conducted on the laminated structure, a resonator body, a connecting beam and an anchoring part are formed, the resonator body is arranged in a suspended mode, and the resonator body is connected with the anchoring part through the connecting beam. According to the invention, the electromechanical coupling efficiency and the quality factor of the MEMS resonator are improved, and the temperature stability of the MEMS resonator is ensured.

The invention relates to the technical field of semiconductors, in particular to a preparation method of a semiconductor through hole, a semiconductor interposer and a preparation method of the semiconductor interposer. The invention provides a preparation method of a semiconductor interposer, which comprises the following steps of: forming lattice defects in a preset through hole region of a semiconductor substrate, and growing an epitaxial semiconductor material layer; selectively removing the amorphous or polycrystalline semiconductor material in the preset through hole region through a corrosion process to obtain a semiconductor intermediate layer through hole; filling the through hole with metal to form a conductive through hole; and thinning the second surface of the semiconductor substrate until the conductive through hole penetrates through the remaining semiconductor substrate and the epitaxial semiconductor material layer to form a semiconductor intermediate layer. According to the method, local internal stress generated by deep reactive ion etching or laser through holes is fundamentally avoided, etching damage to the inner walls of the through holes is reduced, the integrity of the semiconductor interposer is remarkably improved, and the risks of warping, internal stress and even breakage of high wafer level or chip level packaging are fundamentally reduced.

This invention discloses a method for fabricating a conical microporous semi-transparent crystalline silicon photovoltaic cell, relating to the field of photovoltaic cells. The method includes the following steps: silicon wafer cleaning and preparation, photolithography to define the micropore pattern, deep reactive ion etching to prepare vertical micropores, micropore tapering treatment, diffusion doping to form a PN junction, alumina passivation layer deposition, post-annealing treatment, silicon nitride antireflection layer deposition, double-sided microgrid electrode fabrication, Low-E film deposition, and module encapsulation. This invention also discloses a conical microporous semi-transparent crystalline silicon photovoltaic cell fabricated using the above method. Through the synergistic design of the conical micropore structure and the selective Low-E film, this invention significantly expands the effective light transmission angle range of incident light without sacrificing the light absorption area, enabling the module to maintain stable light uniformity under different solar illumination angles. This significantly improves the utilization rate of the near-infrared band, reduces the air conditioning cooling load, and achieves a balance between power generation performance and building insulation function.

The invention provides a terahertz waveguide structure and a preparation method thereof, and the preparation method comprises the steps: arranging a layer of mask on a plurality of wafers, and enabling the mask to comprise one or more mask patterns corresponding to half waveguide structures; performing deep reactive ion etching on each wafer based on the mask, so that one or more half-waveguide structures are formed on each wafer; bonding the plurality of wafers together in a pairwise opposite manner to obtain one or more complete waveguide structures; wherein the waveguide structure is a terahertz waveguide structure.

Provided is a manufacturing method for manufacturing a silicon substrate having a silicon oxide film with a film thickness of 2 μm or more, which is less likely to warp or deform with a small stress in an extremely short time and has excellent film quality (hardness, refractive index, light transmittance). 【Solution means】A first step of patterning an etching mask for deep trenches on the surface of a silicon substrate, a second step of forming deep trenches in the silicon substrate using deep reactive ion etching (D-RIE), and oxidizing the surface of the silicon substrate in which the deep trenches are formed by a thermal oxidation method to oxidize all of the silicon of the ridges defined by the deep trenches and filling the deep trenches with silicon oxide that expands in volume, thereby forming a thick silicon oxide film.

The present invention relates to a multi-chip stacking packaging method and related equipment for an edge AI computing and storage chip, comprising the following steps: obtaining the functional requirements of a preset edge AI computing and storage chip, and determining the chip architecture of the edge AI computing and storage chip and the corresponding sequential arrangement according to the functional requirements; performing TSV etching on a preset wafer through deep reactive ion etching technology to obtain a wafer with a via array; cutting the wafer with the via array to obtain independent diced chips; constructing cooling channels for the independent diced chips to obtain cooling function chips; performing multi-chip integration and packaging on the cooling function chips based on the chip architecture and the corresponding sequential arrangement to obtain an edge AI computing and storage chip; solving the technical problem that the stacked chips are close to each other, the heat dissipation channels become longer, resulting in difficult heat dissipation inside the chips and easy overheating of the chips.

This invention provides a polyimide thin-film passive optical filter device and its fabrication method. The fabrication method includes: providing a semiconductor substrate, and sequentially forming a dielectric layer and a polyimide thin film layer on the front side of the semiconductor substrate; forming a barrier layer on the polyimide thin film layer; forming a first patterned photoresist layer on the barrier layer to obtain a photolithographic pattern of the outer contour of the thin film; sequentially etching the barrier layer, the polyimide thin film layer, and the dielectric layer based on the first patterned photoresist layer; forming a second patterned photoresist layer on the back side of the semiconductor substrate to obtain a photolithographic pattern of the inner contour of the thin film; etching the semiconductor substrate using a deep reactive ion etching process based on the second patterned photoresist layer to form an etching window; and removing the dielectric layer using a dry etching process based on the etching window to obtain the polyimide thin-film passive optical filter device. This fabrication method can effectively improve the performance of the polyimide thin film.

The present invention belongs to the field of semiconductor device technology and relates to a method for preparing a MEMS core mold, comprising the following steps: first, bonding the oxide layer side of a silicon wafer to a wafer substrate via a pyrolytic film, simultaneously forming a desired pattern on the surface of the silicon wafer using deep reactive ion etching, and depositing a metal film on the surface; then, bonding the metal film side of the silicon wafer to the wafer substrate via the pyrolytic film, further etching to form the desired pattern, heating and separating, peeling off the metal film, and removing the oxide layer to obtain a MEMS core mold; wherein the pyrolytic film described in S1 and S2 is composed of a polyethylene terephthalate base film and an acrylic adhesive layer coated on both sides of the base film. The present invention utilizes the pyrolytic film in combination with the oxide layer and metal film of the silicon wafer to effectively avoid contact between the silicon wafer and the pyrolytic film during the lamination and release processes, thereby reducing contamination and damage to the MEMS core mold during or after etching, and can also achieve rapid release.

A method of fabricating a patterned mask on a silicon wafer includes grind-polishing a pre-cut silicon wafer; ion beam figuring the grind-polished silicon wafer, transferring a coronagraphic pattern to a surface of the ion beam figured silicon wafer; and in a cryogenic deep reactive ion etching process, applying black silicon to exposed silicon regions of the ion beam figured silicon wafer. The cryogenic etching process is used to fabricate black silicon to achieve a high aspect ratio structure with higher etch rate than conventional reactive ion etching.

An apparatus for delivering an agent to a target recipient includes a planar substrate having a first surface and a second surface, a reservoir defined in the first surface of the planar substrate, and a plurality of microstructures projecting from the second surface of the planar substrate. Each of the plurality of microstructures includes a delivery channel that extends from the reservoir to a channel opening defined in an exterior surface of the microstructure. In some embodiments, a needle with microchannels can be fabricated using a silicon wafer. A primary channel is etched into the wafer, and then a second silicon wafer can be bonded on top of the initial wafer. Microchannels can be formed from the primary channel to a surface of the wafer using deep reactive ion etching. The diameter of the microchannels may be chosen for drug delivery. The illustrative diameter of the microchannels is 4 micrometers.

The invention relates to a preparation method of an MEMS test chip, and the method comprises the steps: S1, obtaining an MEMS device which comprises a substrate and a device structure which are stacked; s2, performing transverse etching on the substrate to form a side cavity; and S3, etching a region corresponding to the side cavity on the device structure to form a U-shaped cavity with an upward opening, and etching the substrate downwards from the bottom of the U-shaped cavity to communicate the U-shaped cavity with the side cavity to form a cantilever beam. According to the method, expensive and complex deep reactive ion etching is avoided, the used wafer is a common Si wafer, and a relatively expensive SOI wafer is not needed. The used RIE etching is a common low-cost technological means in a laboratory, and the equipment threshold and the manufacturing cost are greatly reduced.

The invention discloses an all-dielectric terahertz metasurface based on an inverted D-shaped column structure and a preparation method, and belongs to the technical field of terahertz metasurfaces. According to the preparation method provided by the invention, the silicon dioxide layer is used as the protective layer, so that the silicon wafer can be effectively prevented from being oxidized or corroded in the subsequent processing process; through the steps of spin coating of a photoresist layer, baking, placement of a mask plate, exposure, development and the like, a pattern of an inverted D-shaped column structure is formed on a silicon wafer, deep reactive ion etching is performed on the silicon wafer by utilizing etching reaction gas, the inverted D-shaped column structure is formed on the silicon wafer, in-plane rotational symmetry of the all-dielectric terahertz metasurface is broken, and the dielectric performance of the all-dielectric terahertz metasurface is improved. Quasi-continuous domain bound state resonance with a higher Q value and an extremely narrow resonance line width is obtained, and active and flexible tuning of formant frequency and the Q value can be realized by controlling the asymmetry of the structure. And the photoresist layer is effectively removed by using the plasma gas, so that the cleanliness and the integrity of the all-dielectric terahertz metasurface are ensured.

The application discloses a processing method of micro-silicon spherical cavities, which comprises the following steps: sequentially performing deposition etching mask, photolithography, removing part of the etching mask, removing glue and deep reactive ion etching on the side of a silicon wafer to be patterned; obtaining the micro-silicon spherical cavities through wet etching; and inputting the real-time collected images into an etching circle detection module and a roughness prediction model and an etching depth prediction model which are pre-established and trained, to obtain the top view, sectional view images of the micro-silicon spherical cavities under the current etching state and the etching related prediction values; comparing the etching related prediction values with the expected indicators, if the expected indicators are not reached, adjusting the wet etching related process parameters and continuing the wet etching; if the expected indicators are met, stopping the etching to obtain the micro-silicon spherical cavities meeting the expected indicators; the etching circle detection module is based on a Hough circle detection algorithm, the roughness prediction model adopts a BP neural network, and the etching depth prediction model adopts a convolutional neural network.

A deep reactive ion etching method for organic silicon comprises the following steps: S110, providing an organic silicon substrate, and forming a patterned mask layer on the surface of the substrate; s120, putting the organic silicon substrate on which the mask layer is formed into an etching system, setting etching parameters, and introducing etching gas to etch the organic silicon substrate; and S130, removing the mask layer to obtain the organic silicon material subjected to ion etching. By selecting the etching gas combination and accurately controlling the flow of the etching gas, the etching precision, the etching depth-to-width ratio and the etching speed which are far higher than those of an existing means for etching can be obtained.