904 results about "Patterned substrate" patented technology

Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the process chamber. The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor to the process chamber. The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer on the exposed single crystal material.

A flexible and stretchable patterned substrate is provided having a strain-permitting material comprising a patterned conformation that allows the flexible patterned substrate to experience local strain or local strain domains lower than the macroscopic strain of the flexible and stretchable patterned substrate.

A method includes patterning one or more electrical layers on a substrate; shaping the patterned substrate into a 3-dimensional contour, wherein the contour including a significant change in gradient in or adjacent to one or more sensing areas of the electrical layer, and over-molding the shaped substrate. Degradation of a trace in the electrical layer at or adjacent to the one or more sensing areas during shaping and / or over-molding is substantially minimized based on the width of the trace, the thickness or number of layers of the trace, the bending radius of the trace, the material of the trace, and / or a primer over layer on the trace.