12 results about "Stress migration" patented technology

The invention discloses a welding seam detection remanufacturing system and device for a hydraulic support, particularly relates to the technical field of mining equipment remanufacturing, and is used for solving the problems of secondary stress migration and base material cracking caused by local heat input during in-situ repair of a box type structural part. A data acquisition module is used for acquiring contour coordinates of a repair area and thickness distribution of base metal; the unit division module divides a stress buffer unit containing a heat input regulation and control subarea based on the thickness gradient and the rib plate layout; the boundary redivision module dynamically optimizes the subarea boundary through geomagnetic field gradient scanning; the heat shock control module executes layered repair welding and activates subarea heat input in sequence; the energy ratio monitoring module switches the activation sub-regions in real time according to the acoustic emission energy ratio to block microscopic plastic deformation; the stress processing module eliminates a migration stress peak value through external expansion area residual stress scanning and local thermal relaxation; the whole-process regulation and control of the stress evolution in the repairing process are realized, and the repairing safety and the service life of the box type structural member are guaranteed under the immovable working condition.

A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.

The invention relates to the technical field of ancient building repair and structure health monitoring, in particular to a building repair project full-period management system based on wood structure stability big data. Comprising the steps of calling historical monitoring data and a proposed repairing scheme as input; carrying out rigidity compatibility and stress migration risk analysis on the scheme to generate a multi-factor evaluation index; calculating a structure topology robustness score, comparing the score with a threshold value, and outputting a conventional repair or risk early warning signal; and according to the triggering scheme, optimizing or generating an execution instruction and storing a log. According to the method, the failure problem caused by the fact that traditional repairing depends on subjective experience is solved, and full-period digital control based on rigidity and stress flow dynamic balance is achieved.

A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.

The application provides a RRAM lower electrode structure and a forming method thereof, and the method comprises the following steps: taking a planarized first metal / dielectric layer as a substrate, and exposing the surface of the first metal / dielectric layer to the first metal in whole or in part; infiltrating the first metal / dielectric layer with silane at a preset infiltration temperature to form a first metal silicide layer on the surface of the first metal; forming a continuous and planar dielectric stop layer on the first metal silicide layer; forming a RRAM cell lower electrode on the surface of the dielectric stop layer; and forming a RRAM cell on the RRAM cell lower electrode after metal surface planarization treatment. By using the application, the adhesion of the first metal and the silicon-based dielectric layer interface can be effectively improved, so that the electromigration and stress migration characteristics of the first metal are further improved, the reliability and yield of the device are improved, the process flow is simplified, the process cycle is shortened, and the process cost is reduced.

The invention relates to an underground cavern surrounding rock stress migration real-time monitoring system and method. The method is suitable for the technical field of underground engineering monitoring. The technical problem to be solved by the invention is to provide an underground cavern surrounding rock stress migration real-time monitoring system and method. According to the technical scheme, the underground cavern surrounding rock stress migration real-time monitoring system comprises an optical signal emission layer which is formed by a mechanoluminescent coating coating a monitoring area, and the mechanoluminescent coating comprises a mechanoluminescent material and epoxy resin; the light sensor is used for collecting the light signal emitted by the light signal emitting layer and converting the light signal into an electric signal; and the signal processing unit is used for extracting the light emitting color and the light emitting intensity of the light signal emission layer according to the electric signal output by the light sensor, and determining the stress information of the monitoring area in combination with the preset relationship between the light emitting color, the light emitting intensity and the stress.

The application discloses a weld seam detection remanufacturing system and device for hydraulic support, and particularly relates to the field of remanufacturing technology of mining equipment, and is used for solving the secondary stress migration and base metal cracking problems caused by local heat input during in-situ repair of box-shaped structural parts; the data acquisition module is used for collecting the repair area contour coordinates and the base metal thickness distribution; the unit division module is used for dividing the stress buffer unit containing the heat input control sub-area based on the thickness gradient and the rib plate layout; the boundary redivision module is used for dynamically optimizing the sub-area boundary through the geomagnetic field gradient scanning; the thermal excitation control module is used for performing layered repair welding and sequentially activating the sub-area heat input; the energy ratio monitoring module is used for switching and activating the sub-area in real time according to the acoustic emission energy ratio to block the microscopic plastic deformation; the stress processing module is used for eliminating the migration stress peak value through the residual stress scanning of the expanded area and the local thermal relaxation; the whole process regulation of the stress evolution during the repair process is realized, and the repair safety and service life of the box-shaped structural parts are ensured under the unmovable working condition.

The application relates to a micro-nano metal sintering connection layer mesostructure evolution and stress migration behavior simulation method, which comprises the following steps: establishing a chip-sintering connection layer-substrate simulation model, and establishing a second layer unit model of the sintering connection layer for phase field simulation; using a random number generation and Gaussian filtering method, a binary matrix representing a porous structure is generated, and initial values of the phase field are obtained; a first control equation of the phase field describing pore evolution is established, and then the second control equation is obtained by considering the atom migration driven by the hydrostatic stress gradient; thermal coupling simulation is carried out, the node hydrostatic stress is calculated from the simulation result and input into the second layer unit model; phase field simulation is carried out, the second control equation is iteratively solved, and the evolution and migration results of the sintering connection layer mesostructure are obtained. The application can establish a micro-nano metal sintering connection layer mesostructure evolution and stress migration behavior simulation method, and provide support for studying the evolution of the mechanical and heat transfer characteristics of the sintering connection layer.

A kind of mining disturbance roadway surrounding rock stress redistribution regulation method and system belong to mine strata control and underground engineering support technical field, method: design stress guide layer space layout and material performance curve, numerical simulation is optimized layout parameter and regulation threshold value;Construction directional drilling injection controllable rheological composite material forms artificial guide layer, and constructs monitoring network;Calculate stress migration criterion index and migration rate, according to initial, through, diffusion three stages implement grading intervention;Through cumulative stress diffusion index evaluates efficiency.The system: guide layer construction subsystem is used for construction directional drilling and injection controllable rheological material forms artificial stress guide layer;Perception regulation subsystem is used for by multi-source sensor real-time monitoring stress state and executing intervention instruction;Intelligent decision-making subsystem is used for based on monitoring data to identify stress migration stage, regulation intervention dose and evaluate efficiency, forms closed-loop control.The present application can significantly improve the stability and safety of mining disturbance roadway.

The present application relates to the technical field of ancient building repair and structure health monitoring, and particularly relates to a building repair project whole cycle management system based on wood structure stability big data; comprising: calling historical monitoring data and preparing a repair scheme as input; performing rigidity compatibility and stress migration risk analysis on the scheme to generate multi-factor evaluation indexes; calculating structure topology robustness score and comparing with threshold value to output routine repair or risk early warning signal; accordingly triggering scheme optimization or generating execution instruction and storing log. The present application solves the failure problem caused by traditional repair relying on subjective experience, and realizes whole cycle digital management and control based on rigidity and stress flow dynamic balance.

This invention discloses a semiconductor device and its fabrication method. It provides a semiconductor substrate with a conductive structure. On the semiconductor substrate, a plug connected to the conductive structure is fabricated above it. An impregnation layer, which is an intermetallic compound, is formed on the surface of the semiconductor substrate with the plug. The intermetallic compound contains a metal wire element, an anti-electromigration metal element, and a bonding metal element. An upper metal layer containing the metal wire element is formed above the impregnation layer. The impregnation layer and the upper metal layer are patterned to obtain interconnects connecting the conductive structure. This invention enables the formation of a uniformly thick impregnation layer and upper metal layer, thereby improving reliability in areas such as electromigration and stress migration, and ensuring the quality of semiconductor products.

This invention belongs to the field of geotechnical engineering technology, and in particular relates to a method for determining stress migration support in underground engineering. The method includes: establishing an in-situ monitoring system for surrounding rock fracture based on the correlation between the fracture depth and support strength of the surrounding rock in underground engineering and the rock brittle-ductile transformation index within the confining pressure range of the project, and the correlation between the gradual nature of surrounding rock fracture and staged support. The method for determining stress migration support in underground engineering provided by this invention can dynamically optimize the timing, method, and strength of support to mobilize the self-bearing potential of deep surrounding rock, thereby achieving active control and safe and stable stress migration in underground engineering.