57783 results about "Metallurgy" patented technology

Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and / or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.

In a ceramic heater having a plate-like body made of a ceramic, heating element in one main face of the plate like body, and an electric supply portion to be electrically connected with the heating element, it has been a problem that the temperature is uneven if bent portions are formed in heat generating patterns. The ceramic heater simultaneously satisfying the following: 0.15<=S<=0.85, 0.3<=P<=6.71XS<2>+1.52, and 0.3<=G<=6.71x(1-S)<2>+1.55, in which the reference character S1 denotes the surface area of the heating element in optional 10 mm square region of the effective heat generation area having the heating element therein; the surface ratio S denotes S=S1 / 100 mm<2>, the reference character P denotes the width of the heating element: and the reference character G denotes the gap between the heating element.

Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.

A ceramic heater for a semiconductor producing / examining device including a ceramic substrate having a heating surface for receiving a semiconductor wafer, a heating device for generating heat sufficient for producing / examining the semiconductor wafer and formed on the heating surface or inside the ceramic substrate, and a temperature measuring device for measuring a temperature of the heating surface and pressed against the ceramic substrate.

The invention relates to new processes for the preparation of antireflective coatings and coated substrates, as well as articles produced by these processes. These coatings can include one or more layers made of materials which form nano-structured and / or nano-porous surfaces. The process can include applying a cross-linkable hard coat to a substrate, partially curing or cross-linking the hard coat, and then applying a second coat carried by a solvent or mixture of solvents capable of swelling the partially cured hard coat. The second coat is then cross-linked and grafted to the hard coat to produce a durable coated substrate with antireflective properties.

Temperature gauge, and ceramic susceptors and semiconductor manufacturing equipment utilizing the temperature gauge, in which the thermocouple may be easily replaced even if damaged, and in which heat from the temperature-gauging site is readily transmitted to the temperature-gauging contact, shortening time until the measurement temperature stabilizes. A temperature-gauging contact (12) in the tip of the thermocouple contacts, in an exposed-as-it-is state, a temperature-gauging site on a ceramic susceptor (1), and by means of a circular cylindrical-shaped retaining member (11) screwed into female threads in the ceramic susceptor (1) is detachably pressed upon and retained against the ceramic susceptor. Thermocouple lead lines (13), passing through a through-hole (14) in the retaining member (11), stretch from one end face to the other end face thereof. The retaining member may be provided with a flange having threaded holes and screwlocked into female screws in the ceramic susceptor.

A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a liner layer preferably is deposited into the trench. An anisotropic plasma process is then performed on the trench. A silicon layer may be deposited on the base of the trench during the plasma process, or the plasma can treat the liner layer. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator, and oxidizing the silicon rich layer on the base of the trench. The resulting trench has a consistent etch rate from top to bottom of the trench.

Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.