1191 results about "Plasma etching" patented technology

The embodiment of the invention discloses an abnormity monitoring system applied to a plasma etching machine. The abnormity monitoring system comprises constant current source equipment, a coil, a coil detection circuit and a controller, and the constant current source equipment is configured to output driving current according to preset etching process parameters; the coil is configured to generate a magnetic field in the etching cavity in response to the input of the driving current to guide the plasma to move towards the direction of the substrate so as to etch the substrate; the coil detection circuit is configured to detect coil state data of the coil; the controller is configured to generate device service information based on the coil state data. According to the embodiment of the invention, the working state of the coil is monitored through the coil state data, and the actual condition of the coil is reflected through the equipment maintenance information, so that a user can quickly know whether the coil is in an abnormal state, the user is helped to quickly position the maintenance direction, the user is prevented from detaching and maintaining the coil from the etching cavity, and the user experience is improved. And various resource investments wasted due to the fact that the coil is abnormal do not exist.

The invention discloses a carbon fiber cloth reinforced damaged concrete structure detection and analysis method, and relates to the technical field of concrete structure health monitoring, and the method comprises the steps: extracting a high-risk point set from a three-dimensional damage distribution map, carrying out the weighted K-means clustering to construct a Voronoi subspace, calculating the failure probability, and dividing an emergency repair block set; generating a processing queue by using the repairing blocks according to priorities, planning a spiral path of the plasma spray gun by adopting a TSP algorithm, and generating a surface roughness distribution diagram in combination with laser confocal and white light interference detection; according to the roughness partition matching epoxy resin-carbon fiber dynamic matching scheme, a pressure thermodynamic diagram is generated through finite element simulation and electrode time-sharing electrification. Through fusion of the damage evolution graph and the digital twin model, the plasma etching parameters and the conductivity of the carbon fiber cloth are dynamically adjusted, so that the tensile strength of the repaired area is improved, and full-life-cycle health monitoring is realized.

The invention provides a gas for plasma etching, a gas combination, an etching method and semiconductor equipment, which belong to the field of plasma etching, and are mainly characterized in that one or more of carbonyl halide, aldehyde halide and carboxyl halide are provided as process gases in the etching process to excite and form plasma, and the plasma is used as a plasma source. According to the method, the to-be-etched layer is etched, so that the problem of upper and lower inconsistency caused by large difference between the bottom etching rate and the middle etching rate when a high-aspect-ratio hole or groove is formed by etching to a certain degree is solved, the morphology of high-aspect-ratio etching is remarkably improved, the collimation is ensured, and the effectiveness of the semiconductor structure is improved.

The invention belongs to the technical field of micro-nano processing, and particularly relates to a preparation method and application of a metal micro-nano tube array. Comprising the following steps: preparing a metal layer on the surface of a substrate; coining glue is sprayed on the surface of the metal layer, then coining is conducted through a template, and a micro glue column array is formed after curing; a plasma etching process is adopted, the micro glue column array is used as a mask, the metal layer exposed out of the gaps in the bottom of the micro glue column array is etched, and a structure with the micro glue columns wrapped by metal is formed; and removing the rubber columns in the structure of the metal-coated micro rubber columns to obtain the metal micro-nano tube array. According to the invention, a residual-layer-free imprinting technology is adopted, the problem of glue layer residue in traditional imprinting is avoided, and the etching uniformity is improved. A plasma dynamic balance process is adopted, the side wall redeposition effect of etching by-products is utilized, and the metal micro-nano tubes are formed in a self-assembly mode. The prepared metal micro-nano tube array has high aspect ratio compatibility, and the nano tube array with the aspect ratio as high as 10: 1 can be realized.

The invention discloses low-temperature-resistant perfluoroether rubber and a preparation method thereof, and the low-temperature-resistant perfluoroether rubber comprises the following raw material components in parts by weight: 80-120 parts of a perfluoroether rubber polymer, 1-5 parts of an additive, 10-30 parts of a filler, 1-3 parts of a cross-linking agent, 1-4 parts of an accelerant, 1-3 parts of a processing aid and 1-3 parts of an acid acceptor. The perfluoroether rubber polymer is prepared through a two-step polymerization method, and then the perfluoroether rubber polymer and all the mixed auxiliary materials are mixed and mixed to prepare the low-temperature-resistant perfluoroether rubber. The perfluoroether rubber provided by the invention not only has relatively high hardness, tensile strength, extrusion deformation resistance, shearing resistance and low temperature resistance, can meet the use requirement of the perfluoroether rubber at-40 DEG C, but also has excellent plasma etching resistance, and can be applied to the semiconductor industry.

The invention discloses an integrated circuit equipment data optimization monitoring system and method based on big data, and relates to the technical field of integrated circuit manufacturing. The method is used for solving the problems of insufficient multi-physical field monitoring, difficulty in abnormal traceability and lack of closed-loop control in plasma etching. A plasma sheath thickness inversion model and an etching selection ratio model are constructed by collecting radio frequency reflection phase, mass spectrum ion strength and wafer temperature data, and process parameter-plasma state dynamic coupling is established. Interference image distortion features and electron microscope size data are fused, micro-groove geometric parameters are analyzed, morphology instability risk indexes are generated, and nanoscale early warning is achieved. And designing a dual-channel fusion network, embedding a physical constraint attention mechanism, and generating an etching rate optimization instruction. On the basis of incremental learning, model parameters are updated online, a'monitoring-decision-feedback 'closed-loop system is formed, anomaly detection sensitivity and decision reliability are improved, and technical support is provided for intelligence of integrated circuit equipment.

The invention provides a semiconductor processing device and a control method thereof, and relates to the technical field of semiconductors, the semiconductor processing device comprises a machine table, the machine table is provided with a process cavity used for plasma etching, the process cavity is communicated with a cache region and a material storage region, and a wafer passes through the cache region, the process cavity and the material storage region in sequence; the device further comprises a degassing module and a gas transmission module, and the degassing module is used for removing residual gas remaining on the surface of the wafer when the wafer is transferred from the processing cavity to the material storage area. And the gas transmission module is used for removing residual gas on the surface of the wafer and then transmitting protective gas to the surface of the wafer so as to protect the surface quality of the wafer. The degassing module is used for removing residual gas left on the surface of the wafer when the wafer is etched; after the residual gas is removed, protective gas is conveyed to the surface of the wafer, so that the wafer can be prevented from reacting with nitrogen, hydrogen, water and the like in the air to generate condensate, and the condition that the condensate corrodes the surface of the wafer to cause damage to the surface of the wafer is solved; the surface quality of the wafer is ensured, and the product yield of the wafer is improved.

The invention provides passivated perfluoroether elastomer rubber as well as a preparation method and application thereof. The passivated perfluoroether elastomer rubber is prepared by sputtering an yttrium oxide passivation layer on the surface of perfluoroether elastomer rubber. The preparation method comprises the following steps: placing the perfluoroether elastomer rubber in a vacuum sputtering cavity, and carrying out sputtering treatment by adopting an yttrium target material to form an yttrium oxide passivation layer with the thickness of 10-100 nm so as to obtain passivated perfluoroether elastomer rubber; and carrying out annealing treatment on the passivated perfluoroether elastomer rubber to eliminate surface stress, and then cleaning and drying for later use. The passivated perfluoroether elastomer rubber is applied to the etching process in the semiconductor manufacturing process, the plasma etching resistance of a perfluoroether elastomer rubber product can be effectively improved by sputtering the yttrium oxide passivation layer, and meanwhile the lubricating performance of the perfluoroether elastomer rubber product is improved.

The invention belongs to the technical field of textile materials, and particularly relates to an antibacterial regenerated wool blended yarn and a production process thereof.The antibacterial regenerated wool blended yarn is prepared from, by weight, 35 parts of regenerated wool fibers, 25-33 parts of LF tencel, 15-27 parts of cellulosic fibers, 8-12 parts of antibacterial chinlon 6 and 5 parts of an antibacterial complexing agent; according to the regenerated wool fiber prepared from the waste wool product through a synergistic improvement process of biological enzyme targeted cleaning and plasma etching, the natural properties of the wool fiber are reserved, and meanwhile, a surface pore structure capable of being combined with an antibacterial complexing agent is also formed; through a Z / S double-twist asynchronous spinning process, dynamic balance of a multilayer structure and hygroscopicity and strength of the blended yarn is achieved, and environment friendliness and commercial feasibility are both achieved.

The invention discloses a preparation method and application of a plasma etching resistant coating, and relates to the technical field of coatings. Comprising the steps that a yttrium oxide layer is prepared through a low-pressure plasma spraying method, the yttrium oxide layer comprises a relative porous layer (the porosity is 1%-3%) and a compact layer (the porosity is smaller than 1%) which are sequentially stacked, and the relative porous layer is used for making contact with a base body. By adopting low-pressure plasma spraying, the yttrium oxide layer with controllable coating morphology and thickness can be obtained, and the thermal expansion coefficient mismatch between the substrate and the compact layer can be effectively relieved through the relative porous layer close to the substrate; the compact layer on the surface is uniform in structure, low in porosity, excellent in cohesion strength and excellent in plasma etching resistance, plasma and a matrix can be isolated, and generation of particles in the etching process is avoided. The compact layer and the relatively porous coating are both prepared on the basis of the same powder material and by adopting the same coating deposition equipment, so that the production efficiency can be improved, and the production cost and the pollution risk caused by transfer between production steps can be reduced.

The invention provides a preparation method and system for improving the reliability of a gallium nitride transistor, and relates to the technical field of manufacturing, and the method comprises the steps: placing a pretreated sapphire substrate in metal organic chemical vapor deposition equipment, introducing trimethyl gallium and ammonia gas as precursors, and carrying out the epitaxial growth of gallium nitride; an alternating pulse supply technology is adopted, and trace iron doping is introduced in the epitaxial growth process so as to reduce the background carrier concentration in the gallium nitride layer; forming a source electrode structure, a drain electrode structure and a grid electrode structure on the gallium nitride epitaxial layer by adopting photoetching and plasma etching technologies; then, a layer of hafnium oxide with the thickness of 5-10 nanometers is deposited in the grid electrode area through the atomic layer deposition technology to serve as a grid dielectric layer; then a plasma enhanced chemical vapor deposition technology is adopted; and finally, the whole device is processed by using a laser annealing technology, and the annealing process is carried out in a nitrogen atmosphere so as to eliminate an interface state and reduce leakage current.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

Exemplary semiconductor processing methods may include depositing a boron-containing material on the substrate. The boron-containing material may extend along sidewalls of the one or more features in the substrate. The methods may include forming a plasma of an oxygen-containing precursor and contacting the substrate with plasma effluents of the oxygen-containing precursor. The contacting may etch a portion of the one or more features in the substrate. The contacting may oxidize the boron-containing material.

The utility model provides plasma processing equipment, belongs to the technical field of plasma etching, and aims to solve the technical problem that function expansion above a reaction cavity is limited. The gas spraying head is positioned below the upper cover plate of the reaction cavity and is used for introducing process gas into the reaction cavity; the base and the gas spraying head are oppositely arranged at the lower part of the reaction cavity, the base is used for bearing a substrate, and a discharge space is formed between the base and the gas spraying head; the lifting ring can move between two positions around the gas spraying head and around the discharging space, the upper side of the lifting ring is connected with a driver above the upper cover plate through a guide rod, and the guide rod and the driver are located in an annular area above the upper cover plate, so that a containing space is formed in a central area above the upper cover plate; the technical scheme is mainly used in a system which needs to generate plasma to process the substrate.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention relates to plasma etching equipment, an etching machine table, a focusing ring and a jacking structure thereof, the focusing ring comprises a plurality of stacked ring bodies, the ring bodies are mutually independently arranged, the axial size of the ring body located on the uppermost layer is larger than the maximum jacking height allowed by the focusing ring, and the jacking height of the focusing ring is larger than the maximum jacking height allowed by the focusing ring. According to the split type focusing ring provided by the invention, in the use process, each ring body can be jacked, so that a large space below the whole jacked original focusing ring is divided into a plurality of small spaces through each ring body, and the small spaces are connected only through small slits among structures; and the concentration and activity of charged particles of the plasma in the small space are limited, so that the purposes of preventing the arc discharge phenomenon and avoiding the generation of sparking traces or the fragmentation of the focusing ring are achieved.

The invention relates to the technical field of ceramic materials, and discloses antibacterial self-cleaning domestic ceramic and a preparation method thereof. The preparation method comprises the following steps: S1, mixing a ceramic green body raw material, an antibacterial precursor and an auxiliary agent, performing ball milling to obtain slurry, performing slip casting on the slurry to obtain a green body, and drying to obtain the green body; s2, carrying out gradient in-situ reaction sintering on the green body, and sintering at the temperature of 400-600 DEG C; then sintering at the temperature of 800 to 1000 DEG C; then sintering at the temperature of 1100 to 1250 DEG C; s3, after sintering, micron-sized pits are formed in the surface of the ceramic body through plasma etching; and S4, glazing: sintering at 700-900 DEG C to combine the glaze with the biscuit, thereby obtaining the antibacterial self-cleaning domestic ceramic. The preparation process is simple, long-acting synergism of antibacterial and self-cleaning performance is achieved, and firm combination of the functional layer and the ceramic matrix is achieved.

The invention discloses application of a hydroxylamine compound cleaning solution. In particular to application of a hydroxylamine compound cleaning solution in cleaning plasma etched and ashed wafers. The hydroxylamine compound cleaning solution is prepared from the following components in percentage by mass: 1 to 30 percent of a hydroxylamine compound, 1 to 5 percent of a corrosion inhibitor, 0.1 to 5 percent of a chelating agent, 0.01 to 5 percent of a nonionic surfactant and 1 to 50 percent of a water-soluble organic solvent and water. The sum of the mass fractions of the components is 100%. The hydroxylamine compound cleaning fluid is safe and environment-friendly, solves the problem of high cost caused by fixed raw material sources, reduces the cost, and is safe and reliable.

The invention relates to the technical field of titanium-steel composite plates, and particularly discloses a high-thermal-conductivity titanium-steel cold-rolled composite plate and a preparation method thereof.The preparation method comprises the steps that plasma etching treatment is conducted on a titanium plate, a TiB2-graphene heat conduction layer is arranged on the etched surface in a laser cladding mode, and an aluminum oxide whisker layer is deposited on a stainless steel plate through plasma electrolysis; the preparation method comprises the following steps: spraying nano-copper slurry on the surface of aluminum oxide whiskers, curing, carrying out composite rolling on a modified titanium plate and a stainless steel plate, and carrying out annealing and tempering treatment after rolling to obtain the high-thermal-conductivity titanium steel cold-rolled composite plate.

The invention discloses a preparation method and application of a zinc-bromine flow battery positive electrode material, and belongs to the field of zinc-bromine flow batteries. The preparation method comprises the following steps: firstly, cleaning and activating a carbon-based three-dimensional conductive network substrate by adopting plasmas, performing oxygen / argon plasma etching, and performing chemical vapor deposition on carbon to prepare three-dimensional porous carbon; then growing a metal oxide nanocrystalline array on the three-dimensional porous carbon by a hydrothermal method, and carrying out ammonia gas calcination to convert the metal oxide nanocrystalline array into a metal nitride nanocrystalline array; then preparing an electro-deposition solution containing tin bismuth salt and an aniline-bromine source polymerization solution, and constructing Sn-Bi bimetallic nanoparticles and a polyaniline-bromine complex layer on the metal nitride nanocrystalline array / three-dimensional porous carbon precursor through electro-deposition and electro-polymerization in sequence to finally prepare the high-performance zinc-bromine battery positive electrode material. The positive electrode material has high conductivity, excellent Br2 / Br <-> catalytic activity and structural stability, and the coulombic efficiency, the voltage efficiency and the energy efficiency of the battery are remarkably improved.

A method of manufacturing micro devices includes: preparing a GaN-based epitaxial structure including a p-type GaN layer, a n-type GaN layer on the p-type GaN layer, and an undoped GaN layer on the n-type GaN layer; forming a photoresist layer on the GaN-based epitaxial structure with the undoped GaN layer contacting the photoresist layer; patterning the photoresist layer; performing a plasma etching process to the GaN-based epitaxial structure through the patterned photoresist layer until the patterned photoresist layer is completely removed, such that a plurality of mesas are formed on the etched GaN-based epitaxial structure, in which a height of the mesas is at least 1.0 μm; and continuing to perform the plasma etching process until the undoped GaN layer is completely removed and the etched GaN-based epitaxial structure is cut into a plurality of micro devices.

The invention belongs to the technical field of biological detection, particularly relates to a gold nano pumpkin array, and relates to an SERS (Surface Enhanced Raman Scattering) sensor of a gastric precancerous lesion biomarker as well as a preparation method and application thereof. The preparation method of the gold nano pumpkin arrays (Au NPAs) comprises the steps that a PS single-layer template is obtained through a gas-liquid interface self-assembly technology, the PS single-layer template is sequentially subjected to plasma etching technology treatment, annealing treatment and ion sputtering treatment, and the gold nano pumpkin arrays (Au NPAs) are obtained. The SERS sensor and the SERS microarray chip constructed on the basis of the gold nano pumpkin array show excellent chemical stability, high molecular specificity and excellent reproducibility, ultra-trace detection of gastric cancer precancerous lesion biomarkers miR-196b and miR-221 is realized, and technical support is provided for early discovery, timely intervention and treatment of GC (Gas Chromatography).

The invention relates to the technical field of plasma etching, and particularly provides a variable-pressure plasma etching system and method and etching equipment, and the system comprises an etching reaction chamber; an etching gas supply assembly; the voltage distribution adjusting assembly is arranged below the wafer to be etched and is used for adjusting the voltage of different etching areas; the etching rate acquisition assembly is arranged in the etching cavity and is used for acquiring the actual etching rate corresponding to each etching area; the controller is used for controlling the voltage distribution adjusting assembly to adjust the voltage of each etching area according to the preset etching rate and the actual etching rate, so that the difference value between the preset etching rate and the actual etching rate of each etching area is adjusted to be within a preset range; the system can effectively solve the problems that a device obtained by a plasma etching process is inconsistent with a target device, the performance of the device is affected and even waste products are generated due to the fact that the distribution uniformity of the etching rate is reduced.

The invention relates to the technical field of semiconductors, and discloses a strongly-oriented yttrium oxide coating and a preparation method thereof.The strongly-oriented yttrium oxide coating is arranged on the surface of a base body, and the strongly-oriented yttrium oxide coating is of a (222)-oriented face-centered cubic phase structure which is not smaller than 70 vol%. According to the strongly oriented yttrium oxide coating provided by the invention, the plasma etching resistance of the yttrium oxide coating can be improved.

The invention provides a metal plate frame and fluororubber sealing assembly and a preparation method thereof, and the preparation method is applied to the technical field of semiconductor sealing and comprises the steps that S1, a metal plate frame is coated with an adhesive, dried and then cooled, and the adhesive is a trithiocyanuric acid derivative solution; s2, a cross-linking agent and an addition agent are added in the thin-passing mixing process of the perfluoroether elastomer, a mixed rubber compound is obtained, the addition agent comprises fluorinated silicon dioxide, fluorinated titanium dioxide or PFA micro powder, and the mass of the addition agent is 2-10% of the mass of the perfluoroether elastomer; and S3, the mixed rubber sheet is placed in a metal plate frame, the metal plate frame with the mixed rubber sheet is placed in a mold to be subjected to hot pressing vulcanization forming, then secondary vulcanization is conducted, then radiation vulcanization is conducted, and the assembly is obtained. The assembly prepared through the method is resistant to plasma etching and high in cleanliness, the bonding performance of the perfluoroether rubber and the metal plate frame is good, and the rate of finished products is high.

An example method for a plasma process includes generating plasma within a process chamber with source power (SP) pulses. The source power pulses have a repetition frequency. The method further includes adjusting a neutral flux within the process chamber by changing the repetition frequency of the source power pulses. In some embodiments, the plasma etches a substrate.

A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10−1 Ω·cm to 20 Ω·cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.

The invention discloses an electric field distribution adjusting device which comprises a first shielding plate and a second shielding plate. The first shielding plate is provided with a hollow hole; the second shielding plate is connected with the first shielding plate, and the two shielding plates can move relatively; and when the second shielding plate moves relative to the first shielding plate, the opening degree of the hollow hole can be adjusted. And the first shielding plate and the second shielding plate can shield an electric field respectively. The electric field distribution adjusting device is provided with two shielding plates capable of shielding an electric field, the two shielding plates can move relatively, the second shielding plate adjusts the opening degree of a hollow hole in the first shielding plate in the relative movement process, and then the shielding degree of the electric field generated by a plasma coupling coil of the plasma etching machine is adjusted. When the etching uniformity of the plasma etching machine is not good, the etching uniformity is improved by changing the electric field. The invention further discloses a plasma etching machine applying the electric field distribution adjusting device, the etching uniformity can be improved by changing the electric field, and the etching effect is improved.

A method for forming a high aspect ratio (HAR) structure during a HAR etch process, the method comprises sequentially or simultaneously exposing the substrate to a vapor of an etchant including one or more hydrofluorocarbon or fluorocarbon compounds or one or more hydrogen-containing molecules and an additive compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film; activating a plasma to produce activated one or more hydrofluorocarbon or fluorocarbon compounds or activated one or more hydrogen-containing molecules and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compounds or the activated one or more hydrogen-containing molecules and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

The invention provides an ICP and CCP combined plasma etching device and method and a preparation method. The device comprises an upper electrode and a lower electrode which are oppositely arranged in a plasma vacuum reaction cavity; the upper electrode comprises a gas spraying area used for spraying gas downwards and an edge area surrounding the gas spraying area, a plurality of windows evenly distributed in the circumferential direction are formed in the edge area, and each window is sealed by an insulating part; wherein coils are arranged above the insulating parts in a one-to-one correspondence mode, or coils which extend in the circumferential direction of the edge area and pass through the upper portions of all the insulating parts are arranged above the edge area. The problems that an existing ICP etching device cannot bear a high-power bias electric field, and a CCP etching device is prone to causing relatively low plasma density at the edge of a substrate can be solved.