749 results about "Plasma etching" patented technology

The embodiment of the invention discloses an abnormity monitoring system applied to a plasma etching machine. The abnormity monitoring system comprises constant current source equipment, a coil, a coil detection circuit and a controller, and the constant current source equipment is configured to output driving current according to preset etching process parameters; the coil is configured to generate a magnetic field in the etching cavity in response to the input of the driving current to guide the plasma to move towards the direction of the substrate so as to etch the substrate; the coil detection circuit is configured to detect coil state data of the coil; the controller is configured to generate device service information based on the coil state data. According to the embodiment of the invention, the working state of the coil is monitored through the coil state data, and the actual condition of the coil is reflected through the equipment maintenance information, so that a user can quickly know whether the coil is in an abnormal state, the user is helped to quickly position the maintenance direction, the user is prevented from detaching and maintaining the coil from the etching cavity, and the user experience is improved. And various resource investments wasted due to the fact that the coil is abnormal do not exist.

The invention belongs to the technical field of micro-nano processing, and particularly relates to a preparation method and application of a metal micro-nano tube array. Comprising the following steps: preparing a metal layer on the surface of a substrate; coining glue is sprayed on the surface of the metal layer, then coining is conducted through a template, and a micro glue column array is formed after curing; a plasma etching process is adopted, the micro glue column array is used as a mask, the metal layer exposed out of the gaps in the bottom of the micro glue column array is etched, and a structure with the micro glue columns wrapped by metal is formed; and removing the rubber columns in the structure of the metal-coated micro rubber columns to obtain the metal micro-nano tube array. According to the invention, a residual-layer-free imprinting technology is adopted, the problem of glue layer residue in traditional imprinting is avoided, and the etching uniformity is improved. A plasma dynamic balance process is adopted, the side wall redeposition effect of etching by-products is utilized, and the metal micro-nano tubes are formed in a self-assembly mode. The prepared metal micro-nano tube array has high aspect ratio compatibility, and the nano tube array with the aspect ratio as high as 10: 1 can be realized.

The invention discloses an integrated circuit equipment data optimization monitoring system and method based on big data, and relates to the technical field of integrated circuit manufacturing. The method is used for solving the problems of insufficient multi-physical field monitoring, difficulty in abnormal traceability and lack of closed-loop control in plasma etching. A plasma sheath thickness inversion model and an etching selection ratio model are constructed by collecting radio frequency reflection phase, mass spectrum ion strength and wafer temperature data, and process parameter-plasma state dynamic coupling is established. Interference image distortion features and electron microscope size data are fused, micro-groove geometric parameters are analyzed, morphology instability risk indexes are generated, and nanoscale early warning is achieved. And designing a dual-channel fusion network, embedding a physical constraint attention mechanism, and generating an etching rate optimization instruction. On the basis of incremental learning, model parameters are updated online, a'monitoring-decision-feedback 'closed-loop system is formed, anomaly detection sensitivity and decision reliability are improved, and technical support is provided for intelligence of integrated circuit equipment.

The invention provides passivated perfluoroether elastomer rubber as well as a preparation method and application thereof. The passivated perfluoroether elastomer rubber is prepared by sputtering an yttrium oxide passivation layer on the surface of perfluoroether elastomer rubber. The preparation method comprises the following steps: placing the perfluoroether elastomer rubber in a vacuum sputtering cavity, and carrying out sputtering treatment by adopting an yttrium target material to form an yttrium oxide passivation layer with the thickness of 10-100 nm so as to obtain passivated perfluoroether elastomer rubber; and carrying out annealing treatment on the passivated perfluoroether elastomer rubber to eliminate surface stress, and then cleaning and drying for later use. The passivated perfluoroether elastomer rubber is applied to the etching process in the semiconductor manufacturing process, the plasma etching resistance of a perfluoroether elastomer rubber product can be effectively improved by sputtering the yttrium oxide passivation layer, and meanwhile the lubricating performance of the perfluoroether elastomer rubber product is improved.

The invention belongs to the technical field of textile materials, and particularly relates to an antibacterial regenerated wool blended yarn and a production process thereof.The antibacterial regenerated wool blended yarn is prepared from, by weight, 35 parts of regenerated wool fibers, 25-33 parts of LF tencel, 15-27 parts of cellulosic fibers, 8-12 parts of antibacterial chinlon 6 and 5 parts of an antibacterial complexing agent; according to the regenerated wool fiber prepared from the waste wool product through a synergistic improvement process of biological enzyme targeted cleaning and plasma etching, the natural properties of the wool fiber are reserved, and meanwhile, a surface pore structure capable of being combined with an antibacterial complexing agent is also formed; through a Z / S double-twist asynchronous spinning process, dynamic balance of a multilayer structure and hygroscopicity and strength of the blended yarn is achieved, and environment friendliness and commercial feasibility are both achieved.

The invention discloses a preparation method and application of a plasma etching resistant coating, and relates to the technical field of coatings. Comprising the steps that a yttrium oxide layer is prepared through a low-pressure plasma spraying method, the yttrium oxide layer comprises a relative porous layer (the porosity is 1%-3%) and a compact layer (the porosity is smaller than 1%) which are sequentially stacked, and the relative porous layer is used for making contact with a base body. By adopting low-pressure plasma spraying, the yttrium oxide layer with controllable coating morphology and thickness can be obtained, and the thermal expansion coefficient mismatch between the substrate and the compact layer can be effectively relieved through the relative porous layer close to the substrate; the compact layer on the surface is uniform in structure, low in porosity, excellent in cohesion strength and excellent in plasma etching resistance, plasma and a matrix can be isolated, and generation of particles in the etching process is avoided. The compact layer and the relatively porous coating are both prepared on the basis of the same powder material and by adopting the same coating deposition equipment, so that the production efficiency can be improved, and the production cost and the pollution risk caused by transfer between production steps can be reduced.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention relates to the technical field of ceramic materials, and discloses antibacterial self-cleaning domestic ceramic and a preparation method thereof. The preparation method comprises the following steps: S1, mixing a ceramic green body raw material, an antibacterial precursor and an auxiliary agent, performing ball milling to obtain slurry, performing slip casting on the slurry to obtain a green body, and drying to obtain the green body; s2, carrying out gradient in-situ reaction sintering on the green body, and sintering at the temperature of 400-600 DEG C; then sintering at the temperature of 800 to 1000 DEG C; then sintering at the temperature of 1100 to 1250 DEG C; s3, after sintering, micron-sized pits are formed in the surface of the ceramic body through plasma etching; and S4, glazing: sintering at 700-900 DEG C to combine the glaze with the biscuit, thereby obtaining the antibacterial self-cleaning domestic ceramic. The preparation process is simple, long-acting synergism of antibacterial and self-cleaning performance is achieved, and firm combination of the functional layer and the ceramic matrix is achieved.

The invention relates to the technical field of titanium-steel composite plates, and particularly discloses a high-thermal-conductivity titanium-steel cold-rolled composite plate and a preparation method thereof.The preparation method comprises the steps that plasma etching treatment is conducted on a titanium plate, a TiB2-graphene heat conduction layer is arranged on the etched surface in a laser cladding mode, and an aluminum oxide whisker layer is deposited on a stainless steel plate through plasma electrolysis; the preparation method comprises the following steps: spraying nano-copper slurry on the surface of aluminum oxide whiskers, curing, carrying out composite rolling on a modified titanium plate and a stainless steel plate, and carrying out annealing and tempering treatment after rolling to obtain the high-thermal-conductivity titanium steel cold-rolled composite plate.

The invention discloses a preparation method and application of a zinc-bromine flow battery positive electrode material, and belongs to the field of zinc-bromine flow batteries. The preparation method comprises the following steps: firstly, cleaning and activating a carbon-based three-dimensional conductive network substrate by adopting plasmas, performing oxygen / argon plasma etching, and performing chemical vapor deposition on carbon to prepare three-dimensional porous carbon; then growing a metal oxide nanocrystalline array on the three-dimensional porous carbon by a hydrothermal method, and carrying out ammonia gas calcination to convert the metal oxide nanocrystalline array into a metal nitride nanocrystalline array; then preparing an electro-deposition solution containing tin bismuth salt and an aniline-bromine source polymerization solution, and constructing Sn-Bi bimetallic nanoparticles and a polyaniline-bromine complex layer on the metal nitride nanocrystalline array / three-dimensional porous carbon precursor through electro-deposition and electro-polymerization in sequence to finally prepare the high-performance zinc-bromine battery positive electrode material. The positive electrode material has high conductivity, excellent Br2 / Br <-> catalytic activity and structural stability, and the coulombic efficiency, the voltage efficiency and the energy efficiency of the battery are remarkably improved.

The invention provides a metal plate frame and fluororubber sealing assembly and a preparation method thereof, and the preparation method is applied to the technical field of semiconductor sealing and comprises the steps that S1, a metal plate frame is coated with an adhesive, dried and then cooled, and the adhesive is a trithiocyanuric acid derivative solution; s2, a cross-linking agent and an addition agent are added in the thin-passing mixing process of the perfluoroether elastomer, a mixed rubber compound is obtained, the addition agent comprises fluorinated silicon dioxide, fluorinated titanium dioxide or PFA micro powder, and the mass of the addition agent is 2-10% of the mass of the perfluoroether elastomer; and S3, the mixed rubber sheet is placed in a metal plate frame, the metal plate frame with the mixed rubber sheet is placed in a mold to be subjected to hot pressing vulcanization forming, then secondary vulcanization is conducted, then radiation vulcanization is conducted, and the assembly is obtained. The assembly prepared through the method is resistant to plasma etching and high in cleanliness, the bonding performance of the perfluoroether rubber and the metal plate frame is good, and the rate of finished products is high.

A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10−1 Ω·cm to 20 Ω·cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.

A method for forming a high aspect ratio (HAR) structure during a HAR etch process, the method comprises sequentially or simultaneously exposing the substrate to a vapor of an etchant including one or more hydrofluorocarbon or fluorocarbon compounds or one or more hydrogen-containing molecules and an additive compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film; activating a plasma to produce activated one or more hydrofluorocarbon or fluorocarbon compounds or activated one or more hydrogen-containing molecules and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compounds or the activated one or more hydrogen-containing molecules and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

The invention provides a magnetic field polarity monitoring system applied to a plasma etching machine, and relates to the technical field of magnetic field polarity monitoring, the magnetic field polarity monitoring system is used for monitoring whether the magnetic field polarity is successfully switched, the magnetic field polarity monitoring system comprises a controller, a coil and a constant current source device, the controller is configured to send a magnetic field polarity switching instruction to a power supply output circuit; the power output circuit is configured to output a target driving signal to the coil; the coil is configured to switch magnetic field polarity in the etching cavity in response to a target driving signal; and the polarity monitoring circuit is configured to monitor a target driving signal output by the power supply output circuit and feed back a magnetic field polarity switching result to the controller according to the target driving signal and the magnetic field polarity switching instruction. By adding the polarity monitoring circuit, active monitoring of the polarity of the output magnetic field of the constant-current source equipment can be realized, the output accuracy of the constant-current source equipment is improved, the working efficiency of the coil is improved, and the running safety of the constant-current source equipment and the coil is also improved.

A glass powder surface gradient activation-asphalt interface bonding enhancement technology is created for the first time, and the industry bottleneck that the compatibility of waste glass and asphalt is poor is broken through. The core of the method comprises the following steps: 1, an original pretreatment process: carrying out three-stage crushing, wet magnetic separation (the magnetic field intensity is 1.2 T), plasma etching (the ratio of Ar to O2 is 4: 1, and the power is 800W) and controllable ball milling (zirconium oxide balls are used for ball milling) on waste glass; according to interface molecular engineering, a bifunctional silane coupling agent (KH-792: gamma-aminoethyl aminopropyl trimethoxy silane) and titanate (NDZ-201) are compounded with a modifying agent (the mass ratio is 3: 1), and a-Si-O-Ti-cross-linked network 3 is constructed on the surface of the glass powder through in-situ hydrolytic condensation. According to mixture collaborative design, mineral powder is replaced by 35-55% of activated glass powder, and the particle size ratio of the activated glass powder to the mineral powder is 1: 2, D90 is smaller than or equal to 20 [mu] m < 2 >, D90 is smaller than or equal to 20 [mu] m < 2 >, and D90 is smaller than or equal to 20 [mu] m < 2 >. The technical effect of forming a core-shell structure reinforced phase in the SBS modified asphalt is as follows: the dynamic stability reaches 5032 + / -210 times / mm (JTGE20-2011T0719), and compared with the traditional mixture, the water sensitivity (TSR) is improved by 79.7% from 81.3% to 96.5%.

The invention discloses a high-purity plasma-corrosion-resistant perfluoroether rubber material which comprises the following components in parts by mass: 100 parts of perfluoroether rubber; 10-20 parts of an organic polymer filler; 0.5-3 parts of a vulcanizing agent; and 1-4 parts of an assistant vulcanizing agent. The invention also provides a preparation method of the rubber material. The preparation method comprises the following steps: preparing a perfluoroether rubber compound and thermally vulcanizing the perfluoroether rubber. The prepared high-purity perfluoroether rubber material is excellent in high-temperature resistance, good in plasma etching resistance and extremely low in metal ion precipitation amount, and has important guiding significance on development of sealing materials.

The invention discloses a preparation method of a high-quality self-supporting polycrystalline diamond substrate. The preparation method comprises the following steps: obtaining a larger first substrate and a smaller second substrate; the molybdenum substrate is a polished molybdenum metal substrate; sowing diamond seed crystals on the first substrate by using an ultrasonic sowing method, and growing a nanocrystalline diamond epitaxial layer by using a CVD (Chemical Vapor Deposition) process; cutting the first substrate by using precise laser to obtain an annular polycrystalline diamond solid seed crystal of which the inner diameter is greater than that of the second substrate; placing a second substrate in the inner diameter of the second substrate, guiding generated tiny diamond grains to the second substrate through a boundary induction mechanism and applying direct current bias voltage, and uniformly wrapping the tiny diamond grains to form a self-supporting polycrystalline diamond substrate; according to the preparation method of the self-supporting polycrystalline diamond substrate, the orientation consistency and the crystallization quality of a diamond film are remarkably improved, and the prepared self-supporting polycrystalline diamond substrate has the advantages of being low in surface roughness, compact in structure, simplified in follow-up process and the like.

To reduce the time required for removing a wafer mask.SOLUTION: Provided is a division method for dividing a wafer (10) along a street (14) by irradiating the wafer with a plasma-activated etching gas (EG), in which the wafer has devices (15) formed in regions divided by the street. A liquid resin (34) is applied to the device and dried to form a mask (17) that masks the device surface while exposing the streets. Plasma-activated etching gas is then applied onto the wafer to form a division groove (18) along the streets. Subsequently, an altered portion (D) on the mask surface is removed by alternating continuous and pulsed irradiation with an oxygen-containing plasma (P), after which the entire mask is removed from the wafer.SELECTED DRAWING: Figure 5

A plasma etching device includes a source power generator configured to generate a source power signal based on a source control signal, a bias power generator configured to generate a bias power signal based on a bias control signal, an inductively-coupled antenna provided with the source power signal, a wafer support member connected to the bias power generator and receiving the bias power signal from the bias power generator, a chamber including the wafer support member and containing plasma generated by source power signal, and a memory configured to store frequency information. The source power generator detects whether the bias power generator is operating, and performs, in response to detecting of the bias power generator being operating, a frequency switching operation. In the frequency switching operation, a frequency of the source power signal is set to a frequency value of the frequency information.

The invention provides a release agent pollution removal and activation method for an epoxy resin-based carbon fiber composite material, which is characterized by comprising the following steps: S1, carrying out vacuum plasma cleaning on the surface of the composite material to remove a residual release agent on the surface; s2, performing vacuum plasma etching on the surface layer of the composite material to remove a release agent pollution layer; s3, circularly repeating the step S1 and the step S2 for N times, wherein N is a non-negative integer; and S4, performing vacuum plasma activation on the surface of the composite material. The release agent pollution removing and activating method can efficiently and thoroughly remove the release agent left on the surface of the composite material, a release agent pollution layer and a release agent penetrating into the deep layer of surface layer resin, the surface quality of the composite material can be remarkably improved, the paint adhesive force is improved, and an ideal base plane is provided for the subsequent paint spraying process.

The invention relates to the field of high polymer material processing, and discloses a high-efficiency low-energy-consumption granulation process and system for a full-biodegradable multiphase composite material, and the process comprises the following steps: feeding raw materials such as polypropylene carbonate, polyester, plant fibers and four-stage activated biomass hydroxyapatite into a double-screw extruder with the length-diameter ratio of not less than 64: 1 in a grading manner according to heat sensitivity; the temperature, the pressure and the shear field are cooperatively controlled, and three-section type temperature distribution of intensified melting, short-time reaction and rapid cooling is established; and carrying out three-stage gradient vacuum devolatilization and underwater pelletizing to obtain a finished product. The four-stage activated biomass hydroxyapatite is prepared by plasma etching, hydrophobic coating, interface coupling and melt pre-dispersion. The problem of degradation of heat-sensitive components is solved through graded feeding and asymmetric temperature control, the dispersity and interface bonding force of the filler are improved by utilizing a four-stage activation technology, closed-loop control is realized by combining online rheology monitoring and an energy consumption model, and continuous production of the full-biodegradable material with low energy consumption, low volatile matter and high mechanical property is realized.

New high entropy ceramics comprising rare earth oxides are disclosed. The new high entropy ceramic materials generally contain from five to ten different rare earth oxides with each of the rare earth oxides comprising a different rare earth element. The new ceramic materials may be substantially single-phase, polycrystalline materials. The new ceramic materials may realize improved properties, such as plasma etch resistance, among others.

The invention provides an anisotropic ion transmission supercapacitor based on topological insulator electrolyte. Relates to the technical field of energy storage devices, and comprises an electrolyte module, the electrolyte module comprises an electrolyte, the electrolyte is a network formed by Bi2Se3 nanowires, and the Bi2Se3 nanowires form an anisotropic ion transport channel through a surface modification method of sodium dodecyl benzene sulfonate and vertical orientation arrangement. According to the anisotropic ion transmission supercapacitor based on the topological insulator electrolyte, an electrolyte module with anisotropic ion transmission characteristics is formed by adopting a network formed by topological insulator electrolyte Bi2Se3 nanowires and a surface modification technology. The electrode performance of the electrode module is enhanced through a vertical heterojunction structure, laser reduction, plasma etching and other processes, and therefore the excellent performance of the solid-state supercapacitor in the aspects of high energy density, low-temperature stability and structural stability is achieved.

The invention relates to the technical field of material sealing, in particular to a high-performance insulating ceramic sealing method for a neutron tube, which comprises the following steps: sequentially carrying out organic solvent ultrasonic cleaning and argon plasma etching activation treatment on a sealing surface of a cylindrical high-purity aluminum oxide ceramic piece, and depositing a titanium transition layer through magnetron sputtering, the ceramic piece with the titanium transition layer is obtained; the sealing face of the kovar alloy cylindrical flange plate is subjected to acid pickling, an oxide layer is removed, cleaning and drying are conducted, and a metal sealing part is obtained; preparing an active brazing filler metal sheet; the components are assembled in sequence to form a pre-assembled component; the pre-assembled component is placed in a vacuum brazing furnace, axial pre-tightening force is applied to the pre-assembled component, sealing is completed, then cooling is controlled, and a sealing piece with an airtight brazing joint is formed; and carrying out annealing treatment to obtain a finished product sealing assembly. Therefore, the problems of low dielectric strength, large thermal expansion coefficient difference, difficulty in interface quality control and the like in the prior art are solved.

The invention discloses a nano-structure composite ceramic coating resistant to plasma etching and a preparation method thereof, and belongs to the technical field of surface protection in the semiconductor device manufacturing process, the composite ceramic coating comprises a priming layer and a surface protection layer which are sequentially deposited on a substrate by adopting a vacuum cold spraying method, the priming layer is made of oxide ceramic, and the surface protection layer is made of silicon oxide. The surface protection layer is made of high-stability rare earth ceramic, the thickness of the bottom layer is 0.2-20 microns, the grain size of the bottom layer is 10-200 nm, the thickness of the surface protection layer is 1-10 microns, and the grain size of the surface protection layer is 10-50 nm. According to the method, the oxide ceramic coating is manufactured on the surface of the substrate through a vacuum cold spraying method to serve as a base coat and then is subjected to heat treatment, so that it is guaranteed that the coating has high binding force, the subsequent coating is prevented from falling off, and when high-stability rare earth ceramic is manufactured, powder with the small powder particle size is selected for manufacturing; therefore, the coating is ensured to have certain etching resistance.

Semiconductor structures and methods of forming the same are provided. In an embodiment, a method includes forming a first antenna coupled to a gate structure of a transistor, the first antenna comprising a first metal line, forming a second antenna coupled to a source / drain feature of the transistor, the second antenna comprising a second metal line, wherein the first metal line and the second metal line are disposed within a same metallization layer, forming a dielectric layer over the metallization layer, performing a plasma etching process to the dielectric layer, thereby forming first trenches exposing the first metal line and second trenches exposing the second metal line, respectively, wherein the first trenches and second trenches are formed in a chronological order, and forming first and second conductive vias in the first trenches and second trenches, respectively.

The invention relates to a multi-element solid waste treatment method and a process for preparing self-compacting low-carbon ultra-high performance concrete by using the multi-element solid waste treatment method, and a self-compacting low-carbon ultra-high performance concrete system is constructed by using a multi-element solid waste synergistic utilization and material modification technology. The distribution of solid wastes with different particle sizes is accurately regulated and controlled by adopting a particle grading optimization model, and performance improvement is realized by combining multi-dimensional material activation and modification. A three-step modification process of high-temperature carbonization pore-forming, acid pickling activation and silane coupling is carried out on the superfine fly ash to form the admixture with both activity and interface enhancement effect; and an electrochemical stripping and microbial mineralization synergistic activation technology is innovatively adopted for the lithium slag, so that the potential activity is effectively excited. The fiber surface is modified through plasma etching and chemical grafting, a multi-scale hybrid fiber reinforcement is prepared in cooperation with an in-situ composite spinning technology, the material toughness is remarkably improved, meanwhile, the problems that ultra-high performance concrete is high in raw material cost, large in carbon emission and large in shrinkage are solved, and therefore the self-compacting low-carbon ultra-high performance concrete is obtained.

The invention provides a maskless etching method of a silicon through hole. The method comprises the following steps: etching a first dielectric layer by adopting a first continuous radio frequency wave plasma etching process; etching the second dielectric layer by adopting a pulse plasma etching process; and further etching the second dielectric layer by adopting a second continuous radio frequency wave plasma etching process. According to the pulse plasma etching, bias power is periodically turned on and turned off, polymer protection layers are formed at the corners and the side walls of the silicon through holes in the bias power turning-off stage, and meanwhile etching of the bottoms of the holes is kept. According to the method, dynamic balance is established between etching and protection, so that the problem that a high-dielectric-constant film layer is exposed due to insufficient corner protection in a traditional process is effectively solved, the thickness of a corner protection layer larger than 100 nm can be reserved, and the yield and reliability of a chip are remarkably improved.

The invention discloses a grid system for a plasma etching system and the plasma etching system, and belongs to the field of integrated circuit manufacturing, the grid system comprises a grid mesh close to a discharge outlet side of a discharge chamber,..., an Nth middle grid mesh and a grid mesh close to a dry etching part side which are arranged in sequence, and each grid mesh comprises a substrate, a plurality of grid mesh holes are uniformly distributed in the substrate, a first film layer with low surface energy and low sputtering yield is arranged on the outer surface of the substrate, and a second film layer with low surface energy and low sputtering yield is arranged on the inner wall of each grid mesh hole; n is an integer greater than or equal to 0. The invention can delay the loss of the grid mesh and delay the adsorption pollution on the surface of the grid mesh.