996 results about "Plasma etching" patented technology

The embodiment of the invention discloses an abnormity monitoring system applied to a plasma etching machine. The abnormity monitoring system comprises constant current source equipment, a coil, a coil detection circuit and a controller, and the constant current source equipment is configured to output driving current according to preset etching process parameters; the coil is configured to generate a magnetic field in the etching cavity in response to the input of the driving current to guide the plasma to move towards the direction of the substrate so as to etch the substrate; the coil detection circuit is configured to detect coil state data of the coil; the controller is configured to generate device service information based on the coil state data. According to the embodiment of the invention, the working state of the coil is monitored through the coil state data, and the actual condition of the coil is reflected through the equipment maintenance information, so that a user can quickly know whether the coil is in an abnormal state, the user is helped to quickly position the maintenance direction, the user is prevented from detaching and maintaining the coil from the etching cavity, and the user experience is improved. And various resource investments wasted due to the fact that the coil is abnormal do not exist.

The invention discloses a carbon fiber cloth reinforced damaged concrete structure detection and analysis method, and relates to the technical field of concrete structure health monitoring, and the method comprises the steps: extracting a high-risk point set from a three-dimensional damage distribution map, carrying out the weighted K-means clustering to construct a Voronoi subspace, calculating the failure probability, and dividing an emergency repair block set; generating a processing queue by using the repairing blocks according to priorities, planning a spiral path of the plasma spray gun by adopting a TSP algorithm, and generating a surface roughness distribution diagram in combination with laser confocal and white light interference detection; according to the roughness partition matching epoxy resin-carbon fiber dynamic matching scheme, a pressure thermodynamic diagram is generated through finite element simulation and electrode time-sharing electrification. Through fusion of the damage evolution graph and the digital twin model, the plasma etching parameters and the conductivity of the carbon fiber cloth are dynamically adjusted, so that the tensile strength of the repaired area is improved, and full-life-cycle health monitoring is realized.

The invention belongs to the technical field of micro-nano processing, and particularly relates to a preparation method and application of a metal micro-nano tube array. Comprising the following steps: preparing a metal layer on the surface of a substrate; coining glue is sprayed on the surface of the metal layer, then coining is conducted through a template, and a micro glue column array is formed after curing; a plasma etching process is adopted, the micro glue column array is used as a mask, the metal layer exposed out of the gaps in the bottom of the micro glue column array is etched, and a structure with the micro glue columns wrapped by metal is formed; and removing the rubber columns in the structure of the metal-coated micro rubber columns to obtain the metal micro-nano tube array. According to the invention, a residual-layer-free imprinting technology is adopted, the problem of glue layer residue in traditional imprinting is avoided, and the etching uniformity is improved. A plasma dynamic balance process is adopted, the side wall redeposition effect of etching by-products is utilized, and the metal micro-nano tubes are formed in a self-assembly mode. The prepared metal micro-nano tube array has high aspect ratio compatibility, and the nano tube array with the aspect ratio as high as 10: 1 can be realized.

The invention discloses an integrated circuit equipment data optimization monitoring system and method based on big data, and relates to the technical field of integrated circuit manufacturing. The method is used for solving the problems of insufficient multi-physical field monitoring, difficulty in abnormal traceability and lack of closed-loop control in plasma etching. A plasma sheath thickness inversion model and an etching selection ratio model are constructed by collecting radio frequency reflection phase, mass spectrum ion strength and wafer temperature data, and process parameter-plasma state dynamic coupling is established. Interference image distortion features and electron microscope size data are fused, micro-groove geometric parameters are analyzed, morphology instability risk indexes are generated, and nanoscale early warning is achieved. And designing a dual-channel fusion network, embedding a physical constraint attention mechanism, and generating an etching rate optimization instruction. On the basis of incremental learning, model parameters are updated online, a'monitoring-decision-feedback 'closed-loop system is formed, anomaly detection sensitivity and decision reliability are improved, and technical support is provided for intelligence of integrated circuit equipment.

The invention provides passivated perfluoroether elastomer rubber as well as a preparation method and application thereof. The passivated perfluoroether elastomer rubber is prepared by sputtering an yttrium oxide passivation layer on the surface of perfluoroether elastomer rubber. The preparation method comprises the following steps: placing the perfluoroether elastomer rubber in a vacuum sputtering cavity, and carrying out sputtering treatment by adopting an yttrium target material to form an yttrium oxide passivation layer with the thickness of 10-100 nm so as to obtain passivated perfluoroether elastomer rubber; and carrying out annealing treatment on the passivated perfluoroether elastomer rubber to eliminate surface stress, and then cleaning and drying for later use. The passivated perfluoroether elastomer rubber is applied to the etching process in the semiconductor manufacturing process, the plasma etching resistance of a perfluoroether elastomer rubber product can be effectively improved by sputtering the yttrium oxide passivation layer, and meanwhile the lubricating performance of the perfluoroether elastomer rubber product is improved.

The invention belongs to the technical field of textile materials, and particularly relates to an antibacterial regenerated wool blended yarn and a production process thereof.The antibacterial regenerated wool blended yarn is prepared from, by weight, 35 parts of regenerated wool fibers, 25-33 parts of LF tencel, 15-27 parts of cellulosic fibers, 8-12 parts of antibacterial chinlon 6 and 5 parts of an antibacterial complexing agent; according to the regenerated wool fiber prepared from the waste wool product through a synergistic improvement process of biological enzyme targeted cleaning and plasma etching, the natural properties of the wool fiber are reserved, and meanwhile, a surface pore structure capable of being combined with an antibacterial complexing agent is also formed; through a Z / S double-twist asynchronous spinning process, dynamic balance of a multilayer structure and hygroscopicity and strength of the blended yarn is achieved, and environment friendliness and commercial feasibility are both achieved.

The invention discloses a preparation method and application of a plasma etching resistant coating, and relates to the technical field of coatings. Comprising the steps that a yttrium oxide layer is prepared through a low-pressure plasma spraying method, the yttrium oxide layer comprises a relative porous layer (the porosity is 1%-3%) and a compact layer (the porosity is smaller than 1%) which are sequentially stacked, and the relative porous layer is used for making contact with a base body. By adopting low-pressure plasma spraying, the yttrium oxide layer with controllable coating morphology and thickness can be obtained, and the thermal expansion coefficient mismatch between the substrate and the compact layer can be effectively relieved through the relative porous layer close to the substrate; the compact layer on the surface is uniform in structure, low in porosity, excellent in cohesion strength and excellent in plasma etching resistance, plasma and a matrix can be isolated, and generation of particles in the etching process is avoided. The compact layer and the relatively porous coating are both prepared on the basis of the same powder material and by adopting the same coating deposition equipment, so that the production efficiency can be improved, and the production cost and the pollution risk caused by transfer between production steps can be reduced.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

Exemplary semiconductor processing methods may include depositing a boron-containing material on the substrate. The boron-containing material may extend along sidewalls of the one or more features in the substrate. The methods may include forming a plasma of an oxygen-containing precursor and contacting the substrate with plasma effluents of the oxygen-containing precursor. The contacting may etch a portion of the one or more features in the substrate. The contacting may oxidize the boron-containing material.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention relates to the technical field of ceramic materials, and discloses antibacterial self-cleaning domestic ceramic and a preparation method thereof. The preparation method comprises the following steps: S1, mixing a ceramic green body raw material, an antibacterial precursor and an auxiliary agent, performing ball milling to obtain slurry, performing slip casting on the slurry to obtain a green body, and drying to obtain the green body; s2, carrying out gradient in-situ reaction sintering on the green body, and sintering at the temperature of 400-600 DEG C; then sintering at the temperature of 800 to 1000 DEG C; then sintering at the temperature of 1100 to 1250 DEG C; s3, after sintering, micron-sized pits are formed in the surface of the ceramic body through plasma etching; and S4, glazing: sintering at 700-900 DEG C to combine the glaze with the biscuit, thereby obtaining the antibacterial self-cleaning domestic ceramic. The preparation process is simple, long-acting synergism of antibacterial and self-cleaning performance is achieved, and firm combination of the functional layer and the ceramic matrix is achieved.

The invention discloses application of a hydroxylamine compound cleaning solution. In particular to application of a hydroxylamine compound cleaning solution in cleaning plasma etched and ashed wafers. The hydroxylamine compound cleaning solution is prepared from the following components in percentage by mass: 1 to 30 percent of a hydroxylamine compound, 1 to 5 percent of a corrosion inhibitor, 0.1 to 5 percent of a chelating agent, 0.01 to 5 percent of a nonionic surfactant and 1 to 50 percent of a water-soluble organic solvent and water. The sum of the mass fractions of the components is 100%. The hydroxylamine compound cleaning fluid is safe and environment-friendly, solves the problem of high cost caused by fixed raw material sources, reduces the cost, and is safe and reliable.

The invention relates to the technical field of titanium-steel composite plates, and particularly discloses a high-thermal-conductivity titanium-steel cold-rolled composite plate and a preparation method thereof.The preparation method comprises the steps that plasma etching treatment is conducted on a titanium plate, a TiB2-graphene heat conduction layer is arranged on the etched surface in a laser cladding mode, and an aluminum oxide whisker layer is deposited on a stainless steel plate through plasma electrolysis; the preparation method comprises the following steps: spraying nano-copper slurry on the surface of aluminum oxide whiskers, curing, carrying out composite rolling on a modified titanium plate and a stainless steel plate, and carrying out annealing and tempering treatment after rolling to obtain the high-thermal-conductivity titanium steel cold-rolled composite plate.

The invention discloses a preparation method and application of a zinc-bromine flow battery positive electrode material, and belongs to the field of zinc-bromine flow batteries. The preparation method comprises the following steps: firstly, cleaning and activating a carbon-based three-dimensional conductive network substrate by adopting plasmas, performing oxygen / argon plasma etching, and performing chemical vapor deposition on carbon to prepare three-dimensional porous carbon; then growing a metal oxide nanocrystalline array on the three-dimensional porous carbon by a hydrothermal method, and carrying out ammonia gas calcination to convert the metal oxide nanocrystalline array into a metal nitride nanocrystalline array; then preparing an electro-deposition solution containing tin bismuth salt and an aniline-bromine source polymerization solution, and constructing Sn-Bi bimetallic nanoparticles and a polyaniline-bromine complex layer on the metal nitride nanocrystalline array / three-dimensional porous carbon precursor through electro-deposition and electro-polymerization in sequence to finally prepare the high-performance zinc-bromine battery positive electrode material. The positive electrode material has high conductivity, excellent Br2 / Br <-> catalytic activity and structural stability, and the coulombic efficiency, the voltage efficiency and the energy efficiency of the battery are remarkably improved.

A method of manufacturing micro devices includes: preparing a GaN-based epitaxial structure including a p-type GaN layer, a n-type GaN layer on the p-type GaN layer, and an undoped GaN layer on the n-type GaN layer; forming a photoresist layer on the GaN-based epitaxial structure with the undoped GaN layer contacting the photoresist layer; patterning the photoresist layer; performing a plasma etching process to the GaN-based epitaxial structure through the patterned photoresist layer until the patterned photoresist layer is completely removed, such that a plurality of mesas are formed on the etched GaN-based epitaxial structure, in which a height of the mesas is at least 1.0 μm; and continuing to perform the plasma etching process until the undoped GaN layer is completely removed and the etched GaN-based epitaxial structure is cut into a plurality of micro devices.

The invention belongs to the technical field of biological detection, particularly relates to a gold nano pumpkin array, and relates to an SERS (Surface Enhanced Raman Scattering) sensor of a gastric precancerous lesion biomarker as well as a preparation method and application thereof. The preparation method of the gold nano pumpkin arrays (Au NPAs) comprises the steps that a PS single-layer template is obtained through a gas-liquid interface self-assembly technology, the PS single-layer template is sequentially subjected to plasma etching technology treatment, annealing treatment and ion sputtering treatment, and the gold nano pumpkin arrays (Au NPAs) are obtained. The SERS sensor and the SERS microarray chip constructed on the basis of the gold nano pumpkin array show excellent chemical stability, high molecular specificity and excellent reproducibility, ultra-trace detection of gastric cancer precancerous lesion biomarkers miR-196b and miR-221 is realized, and technical support is provided for early discovery, timely intervention and treatment of GC (Gas Chromatography).

The invention relates to the technical field of plasma etching, and particularly provides a variable-pressure plasma etching system and method and etching equipment, and the system comprises an etching reaction chamber; an etching gas supply assembly; the voltage distribution adjusting assembly is arranged below the wafer to be etched and is used for adjusting the voltage of different etching areas; the etching rate acquisition assembly is arranged in the etching cavity and is used for acquiring the actual etching rate corresponding to each etching area; the controller is used for controlling the voltage distribution adjusting assembly to adjust the voltage of each etching area according to the preset etching rate and the actual etching rate, so that the difference value between the preset etching rate and the actual etching rate of each etching area is adjusted to be within a preset range; the system can effectively solve the problems that a device obtained by a plasma etching process is inconsistent with a target device, the performance of the device is affected and even waste products are generated due to the fact that the distribution uniformity of the etching rate is reduced.

The invention relates to the technical field of semiconductors, and discloses a strongly-oriented yttrium oxide coating and a preparation method thereof.The strongly-oriented yttrium oxide coating is arranged on the surface of a base body, and the strongly-oriented yttrium oxide coating is of a (222)-oriented face-centered cubic phase structure which is not smaller than 70 vol%. According to the strongly oriented yttrium oxide coating provided by the invention, the plasma etching resistance of the yttrium oxide coating can be improved.

The invention provides a metal plate frame and fluororubber sealing assembly and a preparation method thereof, and the preparation method is applied to the technical field of semiconductor sealing and comprises the steps that S1, a metal plate frame is coated with an adhesive, dried and then cooled, and the adhesive is a trithiocyanuric acid derivative solution; s2, a cross-linking agent and an addition agent are added in the thin-passing mixing process of the perfluoroether elastomer, a mixed rubber compound is obtained, the addition agent comprises fluorinated silicon dioxide, fluorinated titanium dioxide or PFA micro powder, and the mass of the addition agent is 2-10% of the mass of the perfluoroether elastomer; and S3, the mixed rubber sheet is placed in a metal plate frame, the metal plate frame with the mixed rubber sheet is placed in a mold to be subjected to hot pressing vulcanization forming, then secondary vulcanization is conducted, then radiation vulcanization is conducted, and the assembly is obtained. The assembly prepared through the method is resistant to plasma etching and high in cleanliness, the bonding performance of the perfluoroether rubber and the metal plate frame is good, and the rate of finished products is high.

An example method for a plasma process includes generating plasma within a process chamber with source power (SP) pulses. The source power pulses have a repetition frequency. The method further includes adjusting a neutral flux within the process chamber by changing the repetition frequency of the source power pulses. In some embodiments, the plasma etches a substrate.

A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10−1 Ω·cm to 20 Ω·cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.

A method for forming a high aspect ratio (HAR) structure during a HAR etch process, the method comprises sequentially or simultaneously exposing the substrate to a vapor of an etchant including one or more hydrofluorocarbon or fluorocarbon compounds or one or more hydrogen-containing molecules and an additive compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film; activating a plasma to produce activated one or more hydrofluorocarbon or fluorocarbon compounds or activated one or more hydrogen-containing molecules and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compounds or the activated one or more hydrogen-containing molecules and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

The invention provides an ICP and CCP combined plasma etching device and method and a preparation method. The device comprises an upper electrode and a lower electrode which are oppositely arranged in a plasma vacuum reaction cavity; the upper electrode comprises a gas spraying area used for spraying gas downwards and an edge area surrounding the gas spraying area, a plurality of windows evenly distributed in the circumferential direction are formed in the edge area, and each window is sealed by an insulating part; wherein coils are arranged above the insulating parts in a one-to-one correspondence mode, or coils which extend in the circumferential direction of the edge area and pass through the upper portions of all the insulating parts are arranged above the edge area. The problems that an existing ICP etching device cannot bear a high-power bias electric field, and a CCP etching device is prone to causing relatively low plasma density at the edge of a substrate can be solved.

The present invention discloses a low-temperature resistant perfluoroether rubber and a preparation method thereof. In parts by weight, the raw material components include: 80-120 parts of perfluoroether rubber polymer, 1-5 parts of additives, 10-30 parts of fillers, 1-3 parts of cross-linking agents, 1-4 parts of accelerators, 1-3 parts of processing aids, and 1-3 parts of acid absorbers. The present invention prepares a perfluoroether rubber polymer by a two-step polymerization method, and then prepares a low-temperature resistant perfluoroether rubber by mixing the perfluoroether rubber polymer with all mixed auxiliary materials. The perfluoroether rubber provided by the present invention not only has higher hardness, tensile strength, anti-extrusion deformation, shear resistance and low-temperature resistance, can meet the use demand of perfluoroether rubber at 40°C, and also has excellent plasma etching resistance, and can be applied to the semiconductor industry.

The invention relates to a method for manufacturing a high-performance blackbody radiation layer, which comprises the following steps of: firstly, providing a growth substrate for growing the blackbody radiation layer; then, photoetching patterning is carried out on the substrate; then, plasma etching is carried out on the substrate containing the photoetching pattern; and finally, carrying out high-temperature annealing treatment on the substrate. The MEMS infrared light source is simple in process flow, compatible in preparation process and semiconductor process, suitable for process integration and mass production, and beneficial for reducing the cost of the MEMS infrared light source, the black body radiation layer is obtained by carrying out plasma etching on the photoresist and then carrying out high-temperature annealing, the patterning of the black body radiation layer is equal to the patterning of the photoresist, and the manufacturing cost of the black body radiation layer is reduced. Compared with other types of black body radiation layers, the black body radiation layer has the advantage of being easy to manufacture tiny patterns.

The invention provides a magnetic field polarity monitoring system applied to a plasma etching machine, and relates to the technical field of magnetic field polarity monitoring, the magnetic field polarity monitoring system is used for monitoring whether the magnetic field polarity is successfully switched, the magnetic field polarity monitoring system comprises a controller, a coil and a constant current source device, the controller is configured to send a magnetic field polarity switching instruction to a power supply output circuit; the power output circuit is configured to output a target driving signal to the coil; the coil is configured to switch magnetic field polarity in the etching cavity in response to a target driving signal; and the polarity monitoring circuit is configured to monitor a target driving signal output by the power supply output circuit and feed back a magnetic field polarity switching result to the controller according to the target driving signal and the magnetic field polarity switching instruction. By adding the polarity monitoring circuit, active monitoring of the polarity of the output magnetic field of the constant-current source equipment can be realized, the output accuracy of the constant-current source equipment is improved, the working efficiency of the coil is improved, and the running safety of the constant-current source equipment and the coil is also improved.

The invention discloses two-stage pressure regulation plasma etching cleaning equipment and a wafer processing method, the equipment comprises a main chamber, a remote plasma source, an auxiliary chamber, a vacuum pump, a first valve plate, a second valve plate and a flow limiting plate, and the flow limiting plate is provided with a flow limiting hole; a pressure difference foundation is laid through a flow limiting hole, flow fluctuation is dynamically compensated through cooperation of a second valve plate and a pressure regulating valve, millisecond-level precise control over the pressure of the double cavities can be achieved, and it can be guaranteed that efficient operation can be achieved in the two working modes; the wafer processing method aims at a polysilicon gate or a polysilicon-based structure, in the photoresist removing stage, free radicals react with etching residues, all reaction products are gaseous, and gaseous products can be pumped out by a vacuum pump; through the etching and degumming integrated synergistic process, the characteristics of the polycrystalline silicon material and the advantages of two-stage pressure regulation and control equipment are fully utilized, and the balance of efficiency, cost and environmental protection is realized while the process quality is guaranteed.

The invention relates to a silicon oxide filled GST phase change shallow trench pixel-level electronic control metasurface structure and a processing method thereof. The metasurface structure comprises a silicon substrate, a silicon oxide layer and a top ITO electrode from bottom to top. A shallow trench is arranged in the silicon oxide layer, and a bottom layer ITO electrode and a GST nano column are deposited in the shallow trench from bottom to top; the GST nanorod is made of a GST phase change material and is connected with the bottom layer ITO electrode and the top layer ITO electrode; the bottom layer ITO electrode and the top layer ITO electrode are arranged in an orthogonal mode. According to the method, the problem of phase change structure damage caused in high-temperature deposition and plasma etching processes is solved, meanwhile, the process complexity and the process stability are optimized, and the metasurface machining cost is reduced.

The invention discloses a plasma etching process detection method and device, a storage medium and equipment. The method comprises the steps that in the plasma etching process of a first semiconductor structure, the light intensity of gas phase particles in an excited state in a plasma etching cavity is collected, and corresponding optical emission spectrum (OES) data are obtained; and based on the OES data, utilizing a preset machine learning model to obtain a prediction result of the current plasma etching process. By adopting the scheme, the detection efficiency of the plasma etching process can be improved.

The invention relates to the technical field of preparation of nanofiltration membranes, in particular to a preparation method of a hollow fiber nanofiltration membrane based on polytetrafluoroethylene, which is characterized in that the hydrophilicity of a base membrane is improved through treatment such as polydopamine (PDA) coating and plasma etching; two interfacial polymerization reactions are carried out through amine and acyl chloride substances, so that a compact and defect-free secondary polyamide layer is constructed; a double polymerization reaction is adopted in the interfacial polymerization reaction process. After the first polymerization reaction, the polyamide film layer is easy to have defects, and after the second polymerization reaction, the defects of a surface separation layer of the first polymerization reaction can be made up, so that the polyamide film layer has a better separation effect. And finally, through post-treatment, the crosslinking degree of the composite membrane is enhanced. Meanwhile, through matching of the reaction effect in the secondary polymerization reaction and the etching process, the forming quality of the secondary polyamide layer is guaranteed while reagent waste is avoided, and the prepared nanofiltration membrane can be suitable for separation of strong organic solvents.