459 results about "Plasma etching" patented technology

The embodiment of the invention discloses an abnormity monitoring system applied to a plasma etching machine. The abnormity monitoring system comprises constant current source equipment, a coil, a coil detection circuit and a controller, and the constant current source equipment is configured to output driving current according to preset etching process parameters; the coil is configured to generate a magnetic field in the etching cavity in response to the input of the driving current to guide the plasma to move towards the direction of the substrate so as to etch the substrate; the coil detection circuit is configured to detect coil state data of the coil; the controller is configured to generate device service information based on the coil state data. According to the embodiment of the invention, the working state of the coil is monitored through the coil state data, and the actual condition of the coil is reflected through the equipment maintenance information, so that a user can quickly know whether the coil is in an abnormal state, the user is helped to quickly position the maintenance direction, the user is prevented from detaching and maintaining the coil from the etching cavity, and the user experience is improved. And various resource investments wasted due to the fact that the coil is abnormal do not exist.

The invention discloses an integrated circuit equipment data optimization monitoring system and method based on big data, and relates to the technical field of integrated circuit manufacturing. The method is used for solving the problems of insufficient multi-physical field monitoring, difficulty in abnormal traceability and lack of closed-loop control in plasma etching. A plasma sheath thickness inversion model and an etching selection ratio model are constructed by collecting radio frequency reflection phase, mass spectrum ion strength and wafer temperature data, and process parameter-plasma state dynamic coupling is established. Interference image distortion features and electron microscope size data are fused, micro-groove geometric parameters are analyzed, morphology instability risk indexes are generated, and nanoscale early warning is achieved. And designing a dual-channel fusion network, embedding a physical constraint attention mechanism, and generating an etching rate optimization instruction. On the basis of incremental learning, model parameters are updated online, a'monitoring-decision-feedback 'closed-loop system is formed, anomaly detection sensitivity and decision reliability are improved, and technical support is provided for intelligence of integrated circuit equipment.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention discloses a preparation method and application of a zinc-bromine flow battery positive electrode material, and belongs to the field of zinc-bromine flow batteries. The preparation method comprises the following steps: firstly, cleaning and activating a carbon-based three-dimensional conductive network substrate by adopting plasmas, performing oxygen / argon plasma etching, and performing chemical vapor deposition on carbon to prepare three-dimensional porous carbon; then growing a metal oxide nanocrystalline array on the three-dimensional porous carbon by a hydrothermal method, and carrying out ammonia gas calcination to convert the metal oxide nanocrystalline array into a metal nitride nanocrystalline array; then preparing an electro-deposition solution containing tin bismuth salt and an aniline-bromine source polymerization solution, and constructing Sn-Bi bimetallic nanoparticles and a polyaniline-bromine complex layer on the metal nitride nanocrystalline array / three-dimensional porous carbon precursor through electro-deposition and electro-polymerization in sequence to finally prepare the high-performance zinc-bromine battery positive electrode material. The positive electrode material has high conductivity, excellent Br2 / Br <-> catalytic activity and structural stability, and the coulombic efficiency, the voltage efficiency and the energy efficiency of the battery are remarkably improved.

The invention provides a magnetic field polarity monitoring system applied to a plasma etching machine, and relates to the technical field of magnetic field polarity monitoring, the magnetic field polarity monitoring system is used for monitoring whether the magnetic field polarity is successfully switched, the magnetic field polarity monitoring system comprises a controller, a coil and a constant current source device, the controller is configured to send a magnetic field polarity switching instruction to a power supply output circuit; the power output circuit is configured to output a target driving signal to the coil; the coil is configured to switch magnetic field polarity in the etching cavity in response to a target driving signal; and the polarity monitoring circuit is configured to monitor a target driving signal output by the power supply output circuit and feed back a magnetic field polarity switching result to the controller according to the target driving signal and the magnetic field polarity switching instruction. By adding the polarity monitoring circuit, active monitoring of the polarity of the output magnetic field of the constant-current source equipment can be realized, the output accuracy of the constant-current source equipment is improved, the working efficiency of the coil is improved, and the running safety of the constant-current source equipment and the coil is also improved.

The invention discloses a high-purity plasma-corrosion-resistant perfluoroether rubber material which comprises the following components in parts by mass: 100 parts of perfluoroether rubber; 10-20 parts of an organic polymer filler; 0.5-3 parts of a vulcanizing agent; and 1-4 parts of an assistant vulcanizing agent. The invention also provides a preparation method of the rubber material. The preparation method comprises the following steps: preparing a perfluoroether rubber compound and thermally vulcanizing the perfluoroether rubber. The prepared high-purity perfluoroether rubber material is excellent in high-temperature resistance, good in plasma etching resistance and extremely low in metal ion precipitation amount, and has important guiding significance on development of sealing materials.

The invention relates to the field of high polymer material processing, and discloses a high-efficiency low-energy-consumption granulation process and system for a full-biodegradable multiphase composite material, and the process comprises the following steps: feeding raw materials such as polypropylene carbonate, polyester, plant fibers and four-stage activated biomass hydroxyapatite into a double-screw extruder with the length-diameter ratio of not less than 64: 1 in a grading manner according to heat sensitivity; the temperature, the pressure and the shear field are cooperatively controlled, and three-section type temperature distribution of intensified melting, short-time reaction and rapid cooling is established; and carrying out three-stage gradient vacuum devolatilization and underwater pelletizing to obtain a finished product. The four-stage activated biomass hydroxyapatite is prepared by plasma etching, hydrophobic coating, interface coupling and melt pre-dispersion. The problem of degradation of heat-sensitive components is solved through graded feeding and asymmetric temperature control, the dispersity and interface bonding force of the filler are improved by utilizing a four-stage activation technology, closed-loop control is realized by combining online rheology monitoring and an energy consumption model, and continuous production of the full-biodegradable material with low energy consumption, low volatile matter and high mechanical property is realized.

The invention provides an anisotropic ion transmission supercapacitor based on topological insulator electrolyte. Relates to the technical field of energy storage devices, and comprises an electrolyte module, the electrolyte module comprises an electrolyte, the electrolyte is a network formed by Bi2Se3 nanowires, and the Bi2Se3 nanowires form an anisotropic ion transport channel through a surface modification method of sodium dodecyl benzene sulfonate and vertical orientation arrangement. According to the anisotropic ion transmission supercapacitor based on the topological insulator electrolyte, an electrolyte module with anisotropic ion transmission characteristics is formed by adopting a network formed by topological insulator electrolyte Bi2Se3 nanowires and a surface modification technology. The electrode performance of the electrode module is enhanced through a vertical heterojunction structure, laser reduction, plasma etching and other processes, and therefore the excellent performance of the solid-state supercapacitor in the aspects of high energy density, low-temperature stability and structural stability is achieved.

The invention relates to the technical field of material sealing, in particular to a high-performance insulating ceramic sealing method for a neutron tube, which comprises the following steps: sequentially carrying out organic solvent ultrasonic cleaning and argon plasma etching activation treatment on a sealing surface of a cylindrical high-purity aluminum oxide ceramic piece, and depositing a titanium transition layer through magnetron sputtering, the ceramic piece with the titanium transition layer is obtained; the sealing face of the kovar alloy cylindrical flange plate is subjected to acid pickling, an oxide layer is removed, cleaning and drying are conducted, and a metal sealing part is obtained; preparing an active brazing filler metal sheet; the components are assembled in sequence to form a pre-assembled component; the pre-assembled component is placed in a vacuum brazing furnace, axial pre-tightening force is applied to the pre-assembled component, sealing is completed, then cooling is controlled, and a sealing piece with an airtight brazing joint is formed; and carrying out annealing treatment to obtain a finished product sealing assembly. Therefore, the problems of low dielectric strength, large thermal expansion coefficient difference, difficulty in interface quality control and the like in the prior art are solved.

The invention provides a maskless etching method of a silicon through hole. The method comprises the following steps: etching a first dielectric layer by adopting a first continuous radio frequency wave plasma etching process; etching the second dielectric layer by adopting a pulse plasma etching process; and further etching the second dielectric layer by adopting a second continuous radio frequency wave plasma etching process. According to the pulse plasma etching, bias power is periodically turned on and turned off, polymer protection layers are formed at the corners and the side walls of the silicon through holes in the bias power turning-off stage, and meanwhile etching of the bottoms of the holes is kept. According to the method, dynamic balance is established between etching and protection, so that the problem that a high-dielectric-constant film layer is exposed due to insufficient corner protection in a traditional process is effectively solved, the thickness of a corner protection layer larger than 100 nm can be reserved, and the yield and reliability of a chip are remarkably improved.

The invention discloses a grid system for a plasma etching system and the plasma etching system, and belongs to the field of integrated circuit manufacturing, the grid system comprises a grid mesh close to a discharge outlet side of a discharge chamber,..., an Nth middle grid mesh and a grid mesh close to a dry etching part side which are arranged in sequence, and each grid mesh comprises a substrate, a plurality of grid mesh holes are uniformly distributed in the substrate, a first film layer with low surface energy and low sputtering yield is arranged on the outer surface of the substrate, and a second film layer with low surface energy and low sputtering yield is arranged on the inner wall of each grid mesh hole; n is an integer greater than or equal to 0. The invention can delay the loss of the grid mesh and delay the adsorption pollution on the surface of the grid mesh.

The application discloses a composite current collector based on a PP-based film / PET-based film and a production process, which comprises the following steps: S1, base film pretreatment; S2, physical modification treatment; S3, double-layer intermediate transition layer preparation; and S4, metal layer preparation. The physical modification constructs a micro-nano rough structure on the surface of the base film through plasma etching, removes impurities in a weak boundary layer, increases the contact area by 3-5 times, provides a basis for the mechanical occlusion of the transition layer and the metal layer, and introduces a small amount of oxygen-containing polar groups to preliminarily increase the surface energy; and the transition layer is a composite structure of a silane coupling agent and a Cr layer, is combined with the polar groups of the base film through Si-O-C covalent bonds, is connected with the coupling agent and the Cr layer through Cr-N coordination bonds, and is embedded into rough pits through Cr atoms to form a dual action of mechanical anchoring and chemical bridging, so that the peeling strength of the metal layer and the base film is greatly increased through the cooperation of the two, and the mechanical requirement of long-term cycling of a lithium battery is met.

The invention discloses an anti-radiation medical protective glove and a production process thereof, and belongs to the technical field of medical protective gloves, a polydopamine hollow microsphere is prepared by using ZIF-8 as a self-sacrifice template, bismuth and gadolinium elements are loaded through hydrothermal synthesis and ion adsorption, a composite shielding microsphere is prepared, and the composite shielding microsphere is used for preparing the anti-radiation medical protective glove. Then, the composite shielding microspheres and a nano starch enhanced cross-linked network are synergistically introduced into a natural latex matrix, after dipping forming, a hydrophilic / hydrophobic wetting gradient is constructed on a glove lining through mask auxiliary plasma etching, and the anti-radiation medical protective glove is prepared. Through the cooperation of the shielding function of the composite microspheres, the mechanical enhancement of a nano starch cross-linked network and the surface one-way moisture conduction function, the glove has excellent radiation protection performance and also has the characteristics of being light, flexible and comfortable to wear, the problems that a traditional lead rubber glove is heavy, rigid and poor in air permeability are effectively solved, and the service life of the glove is prolonged. The system is especially suitable for medical scenes requiring high flexibility and comfort, such as interventional radiosurgery.

This invention discloses a method for synergistic surface modification of tungsten-copper powder to inhibit the decomposition of polyoxymethylene (POM), belonging to the field of polymer material anti-degradation modification technology. This invention addresses the problem that tungsten-copper powder easily catalyzes the severe degradation of POM during PIM tungsten-copper feedstock mixing and injection molding, leading to poor feedstock flowability, injection instability, large fluctuations in product size and weight, and low yield. First, the tungsten-copper powder is activated by low-temperature plasma etching to construct a reaction interface. Then, a silica barrier film is prepared using tetraethyl orthosilicate as the silicon source and modified with fluorosilicone, loaded with a metal soap neutralizer, grafted with a hindered phenolic antioxidant, and simultaneously introduced with epoxy active groups to construct a multi-component synergistic degradation inhibition system. This invention, through multi-step synergistic modification, precisely controls the modification process, comprehensively inhibiting POM decomposition. When the modified powder is blended with POM, a capping reaction occurs, blocking the unzipping degradation pathway of POM, improving the compatibility of the filler and the matrix, and ensuring the continuous and stable preparation and injection molding of PIM tungsten-copper feedstock.

The application discloses a biomimetic urchin-shaped asymmetric structure composite phase change chitosan aerogel loaded with TiO2 / rGO heterojunction and a preparation method and application thereof, adopts argon plasma etching GO, step-by-step dropwise adding tetrabutyl titanate to prepare TiO2 / rGO heterojunction; prepares a multi-level structure phase change microcapsule by an interfacial polymerization method; mixes the heterojunction with a chitosan solution, and prepares a biomimetic urchin-shaped asymmetric chitosan aerogel framework through a customized asymmetric mold and a unidirectional freezing process; fixes the phase change microcapsule by a vacuum-assisted impregnation method, and then performs in-situ coating through polydopamine to obtain the biomimetic urchin-shaped asymmetric structure composite phase change chitosan aerogel loaded with TiO2 / rGO heterojunction, the removal rate of VOCs of the biomimetic urchin-shaped asymmetric structure composite phase change chitosan aerogel loaded with TiO2 / rGO heterojunction is greater than or equal to 80% at low temperature, the phase change microcapsule dispersion rate is less than or equal to 3% after 100 cycles, the structural stability and the cycle durability are excellent, and the biomimetic urchin-shaped asymmetric structure composite phase change chitosan aerogel loaded with TiO2 / rGO heterojunction is suitable for efficient purification of VOCs in low-temperature closed scenes such as cold chain workshops and indoor environments in winter.

The application provides an ICP and CCP combined plasma etching device, method and preparation method, which comprises upper and lower electrodes oppositely arranged in a plasma vacuum reaction chamber; the upper electrode comprises a gas spraying area for spraying gas downward and a edge area surrounding the gas spraying area, the edge area is provided with a plurality of circumferentially uniformly distributed windows, and each window is closed by an insulating piece; wherein a coil is arranged above each insulating piece in one-to-one correspondence, or a coil extending through the above of all insulating pieces along the circumference of the edge area is arranged above the edge area. The application can solve the problems that the existing ICP etching device cannot withstand high-power bias electric field and the CCP etching device is prone to cause relatively low plasma density at the edge of the substrate.

The invention belongs to the technical field of chemistry, chemical engineering, materials and the like, and particularly relates to a composite material and a preparation method and application thereof.The composite material comprises a metal base material, a bottom coating and a surface coating, the surface of the metal base material is coated with the bottom coating, and the bottom coating comprises nanoparticles and a resin material; the surface coating is located on the upper surface of the bottom coating, and the surface coating comprises a fluorine-containing silane solution; wherein the upper surface of the bottom coating is provided with a surface microstructure, and the surface microstructure is formed by the nanometer particles in a protruding mode based on plasma etching. Wherein the bottom coating can form a surface microstructure to ensure the hydrophobic property, and can fix nanoparticles, so that the frost prevention durability is ensured, and the powder falling of the composite material in the use process is also avoided; the surface coating can further improve the hydrophobicity of the bottom coating under the condition that the surface microstructure is not influenced.

This utility model relates to a composite copper foil conductive layer structure, comprising a substrate layer, a transition layer, and a conductive layer. The conductive layer is located on the surface of the substrate layer, and the transition layer is located between the substrate layer and the conductive layer. Micropores are formed on the surface of the substrate layer by plasma etching. The transition layer is formed on the surface of the substrate layer by magnetron sputtering. Cross-linked mesh grooves are formed on the surface of the conductive layer by laser engraving or chemical etching. This structure, through a multi-layer composite design, provides mechanical support through the substrate layer, enhances interfacial bonding through the transition layer, and optimizes conductivity through the conductive layer. By combining a lightweight substrate with a highly conductive metal layer, a balance between high strength, high flexibility, and excellent electrical performance is achieved.

The invention discloses a gallium nitride HEMT (high electron mobility transistor) device manufacturing method, which comprises the steps that an epitaxial layer is formed on a growth substrate through an MOCVD (metal organic chemical vapor deposition) and / or HVPE (high voltage plasma etching) process, and the epitaxial layer comprises a gallium nitride channel layer and an AlGaN barrier layer; forming a dielectric layer on the AlGaN barrier layer through a deposition process; photoetching and defining regions of a source electrode and a drain electrode on the epitaxial layer and the dielectric layer, and etching and opening a source electrode contact window and a drain electrode contact window; metal pattern areas of a source electrode, a drain electrode and a grid electrode are defined on the dielectric layer and the epitaxial layer in a photoetching mode, a first Ti layer, a middle Al layer and a second Ti layer are sequentially evaporated on the metal pattern areas to form a Ti / Al / Ti metal laminated layer, synchronous annealing is carried out on the Ti / Al / Ti metal laminated layer within a first temperature range, and a second Ti layer is formed within a second temperature range; the Ti / Al / Ti metal lamination is alloyed to form a source electrode, a drain electrode and a grid electrode, and the first temperature range is 500-600 DEG C. Compared with the prior art, the process can be effectively simplified, the cost is reduced, and the wafer Vth uniformity is improved.

The invention discloses a method for preparing high-density yttrium oxyfluoride ceramic by combining a hydrothermal method and hot pressed sintering. The method comprises the following steps: (1) respectively preparing a yttrium nitrate (Y (NO3) 3.6 H2O) solution and an ammonium fluoride (NH4F) solution; (2) mixing the raw materials, and stirring for 10 to 20 minutes; (3) adding a sodium hydroxide solution into the mixed solution to adjust the pH value of the system to 10-12, and continuously stirring for 10-20 minutes to obtain a premixed solution; (4) transferring the premixed solution into a hydrothermal kettle, and carrying out hydrothermal reaction under a high-temperature condition; (5) carrying out centrifugal separation and drying treatment on the hydrothermal reaction product to obtain a yttrium oxyfluoride precursor; (6) calcining the precursor in a muffle furnace in an air atmosphere; and (7) carrying out hot pressed sintering on the obtained powder under the conditions of 750-1000 DEG C and 20-40 MPa, and carrying out heat preservation for 30-90 minutes. The obtained ceramic has high compactness and excellent plasma etching resistance.

The application relates to the technical field of ceramic materials, and provides boron carbide ceramic material resistant to plasma etching, a preparation method thereof and etching equipment. The boron carbide ceramic material comprises boron carbide and etching-resistant intergranular phases. The etching-resistant intergranular phases are at least dispersed at the grain boundaries of the boron carbide, and the etching-resistant intergranular phases comprise Y3Al5O 12 , and rare earth elements are doped in at least part of the Y3Al5O 12 . In the etching process, the etching-resistant intergranular phases can inhibit corrosion at the grain boundaries of the boron carbide, can not only maintain the mechanical properties of the boron carbide, but also can significantly enhance the etching resistance of the boron carbide ceramic, prolong the service life of the etching equipment, and reduce the replacement cost of etching-damaged consumables.

The invention relates to a method for preparing a rapid hydrochromic mesoporous tungsten oxide film based on a plasma etching technology. The preparation method comprises the following steps: mixing an amphoteric block copolymer template agent with a tungsten source precursor, and coating the surface of a substrate with obtained sol to construct an organic-inorganic hybrid film; then introducing oxygen-containing plasma to etch the hybrid film; and finally loading a catalyst layer on the surface of the film. By utilizing the synergistic effect of high-energy active particles and active oxygen species in the plasma, through coupling of physical bombardment and chemical oxidation / volatilization reaction, the rapid removal of the organic template is realized under a low-temperature condition, meanwhile, the structural integrity of a mesoporous skeleton is kept, and the pore collapse and the specific surface area loss caused by traditional high-temperature calcination are avoided. The obtained mesoporous WO3 thin film has a high specific surface area and abundant surface active sites, and hydrogen diffusion and interface reaction kinetics can be effectively improved, so that the coloring / fading response is remarkably accelerated, and the hydrogen-induced discoloration performance is improved.

A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

The invention discloses a method for rapidly forming a nano pattern by using a block copolymer and application thereof. The method for rapidly forming the nano-pattern by using the block copolymer comprises the following steps: dissolving the polystyrene-polymethyl methacrylate block copolymer in a mixed solvent consisting of a low-boiling-point organic solvent and a high-boiling-point organic solvent, wherein the boiling point of the low-boiling-point organic solvent is lower than 150 DEG C, and the boiling point of the high-boiling-point organic solvent is lower than 150 DEG C; the boiling point of the high-boiling-point organic solvent is higher than 150 DEG C, the high-boiling-point organic solvent is spin-coated on the surface of a substrate to form a thin film, annealing and plasma etching are carried out, and the periodic nano-pattern is obtained. According to the method for rapidly forming the nano pattern by using the segmented copolymer, the annealing time is shortened to be within 5 min, the production efficiency is remarkably improved, the formed nano pattern is high in structural orderliness and low in defect rate, and the method is suitable for the fields of semiconductor guided self-assembly photoetching, nanoimprint template manufacturing, high-density storage device preparation and the like.

The invention relates to the technical field of material surface treatment, in particular to a preparation method and application of a patterned self-repairing hydrophobic and oleophobic surface resistant to plasma treatment. The composite material prepared by the method has excellent super-hydrophobic and oleophobic performance, self-repairing performance after plasma treatment, durability and chemical stability. The fluorine-containing monomer chain segment is grafted on the porous polymer membrane framework through ATRP reaction, and the storage effect of the fluorine-containing monomer chain segment in the polymer network is utilized, so that after the surface of the composite material is damaged by oxygen plasma etching, the internal fluorine-containing monomer chain segment can be induced to migrate and rearrange towards the surface only through heat treatment, and the surface of the composite material is protected. The rapid in-situ repair of the super-hydrophobic and oleophobic performance is realized; in addition, erasing and rewriting of patterns can be achieved on the surface of the composite material, the limitation that curing is achieved once forming is conducted in traditional surface modification is broken through, secondary function patterns are flexibly constructed or overlaid on the surface of a substrate, and wide application prospects are achieved.

The application discloses a kind of nanostructure composite ceramic coating resistant to plasma etching and preparation method thereof, belong to the surface protection technical field in the process of semiconductor device manufacturing, composite ceramic coating includes the surface protection layer and the primer layer sequentially deposited on substrate using vacuum cold spraying method, the primer layer material is oxide ceramic, the surface protection layer material is high stability rare earth ceramic, the thickness of primer layer is 0.2~20 μm, grain size is 10~200nm, the thickness of surface protection layer is 1~10 μm, grain size is 10~50 nm.The application is by first using the method of vacuum cold spraying on substrate surface to make a layer of oxide ceramic coating as primer layer after heat treatment, to ensure that coating has higher bonding force, prevent subsequent coating from falling off, when making high stability rare earth ceramic, select powder with smaller particle size to make, to ensure that coating has certain etching resistance.

The invention discloses a plasma etching chamber, a cleaning method and semiconductor process equipment. The plasma etching chamber comprises a chamber body, a substrate table, a metal plate and an edge pressing piece. The edge pressing piece comprises a first end, the first end abuts against the side, away from the substrate table, of the metal plate, and the surface, extending along the side, away from the substrate table, of the first end is configured to be a first area. Wherein the metal plate is provided with an internal sputtering area and an insulating sputtering area surrounding the internal sputtering area, the internal sputtering area is used for providing cleaning particles for the inner wall of the chamber body under the excitation of plasma, and the first area is located in the insulating sputtering area; the insulating sputtering region is configured to inhibit formation of a conductive film in the first region of the blank holder during deposition of the cleaning particles. Cleaning can be completed on the premise that the vacuum cavity is not opened, and meanwhile the risk that a conductive film is formed on the edge of the edge pressing piece due to metal deposition, and then abnormal discharge is induced is eliminated.

Provided is a plasma etching method with which it is possible to etch silicon at a high etching rate by using iodine fluoride in the presence of a carbon material or a silicon oxide material. This plasma etching method comprises an etching step for performing plasma etching of silicon in the presence of a carbon material or a silicon oxide material by using plasma obtained by converting an etching gas into plasma. The etching gas contains iodine fluoride and a hydrogen-containing compound. The hydrogen-containing compound is a compound that has a hydrogen atom in a molecule and does not have an oxygen atom in the molecule.

An apparatus includes a substrate support for holding a substrate at a cryogenic temperature during etching, a plasma source configured to generate a plasma located above the substrate support, an ion acceleration grid located between the plasma source and the substrate support, wherein the ion acceleration grid is configured to apply a potential difference that, during etching, accelerates ions from the plasma toward the substrate support, and an inlet for an etchant process gas, wherein the inlet is located between the ion acceleration grid and the substrate support.