Eureka-AI is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Eureka AI

2414 results about "Plasma treatment" patented technology

Plasma treatment uses a controlled vacuum plasma to alter the surface of a material in order to improve bonding, printing, painting, coating, or wettability. The process is performed in a plasma chamber under vacuum pressure. It is commonly used in the manufacturing of electronic devices, medical devices, textiles, plastics, rubbers, and more.

Inductive RF plasma source with external discharge bridge

An RF ICP source having a housing with a flanged cover. The interior of the housing serves for confining plasma generated by the plasma source. The cover has at least two openings which are connected by a hollow C-shaped bridge portion which is located outside the housing. The hollow C-shaped bridge portion is embraced by an annular ferrite core having a winding connected to an electric power supply source for generating a discharge current which flows through the bridge portion and through the interior of the housing. The discharge current is sufficient for inducing plasma in the interior of the housing which is supplied with a gaseous working medium. The power source operates on a relatively low frequency of 60 KHz or higher and has a power from several watt to several kilowatt. In order to provide a uniform plasma distribution and uniform plasma treatment, the cover may support a plurality of bridges. Individual control of the inductors on each bridge allows for plasma redistributing. The housing of the working chamber can be divided into two section for simultaneous treatment of two objects such as semiconductor substrates. A plate that divides the working chamber into two sections may have ferrite cores built into the plate around the bridges. In another embodiment, the flow of gaseous working medium is supplied via a tube connected to the bridge portion of the source.

Plasma processing apparatus and mounting unit thereof

A parallel plate type plasma processing apparatus including a RF feed rod for applying a high frequency power to a susceptor and a temperature detection unit for detecting the temperature of a substrate on the susceptor is configured to reduce an effect that high frequency current flowing in the RF feed rod has on temperature detection of the temperature detection unit. A surface portion of the susceptor serves as a mounting unit including an electrostatic chuck and a heater. A shaft, which is a protection pipe extracted downward from the processing chamber, is provided under the mounting unit. A chuck electrode of the electrostatic chuck serves as an electrode for applying a high frequency voltage. Provided in the shaft are two RF feed rod for supplying a power to the electrode and an optical fiber, i.e., a temperature detection unit, having a dielectric fluorescent material is disposed in a leading end thereof. Then, the two RF feed rods and bar type conductive leads for the heater are alternately arranged at equal intervals in a circumferential direction on a circle having the optical fiber at the center thereof such that the region having therein the optical fiber is an electromagnetic wave-free region since the electric force lines respectively traveling from the RF feed rods to bar type conductive leads are offset with each other.
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products