1595 results about "Plasma treatment" patented technology

The invention discloses a carbon fiber composite material surface modification spraying system and a control method thereof. The system comprises a multi-axis robot, a plasma spray gun, a contact angle measuring probe, a 3D line laser scanner, a hyperspectral imager, an environment sensor and a controller. According to the method, the plasma power and the robot speed are adjusted in real time through contact angle measurement and plasma treatment feedback control, so that the CFRP surface can accurately reach a target value, and the coating adhesive force is improved; 3D line laser scanning and hyperspectral imaging are combined, and the posture, the distance, the wet film thickness and the component uniformity of the spray gun are monitored in real time; based on a prediction model fusing a physical model and a neural network, a self-adaptive fuzzy PID control algorithm is adopted, and the coating flow and the track posture of a spray gun are accurately regulated and controlled in real time. The problems of weak coating binding force, uneven thickness, orange peel, sagging and serious coating waste in traditional spraying are effectively solved, and self-adaptive, high-quality and green spraying of workpieces with complex curved surfaces is achieved.

The invention relates to the technical field of wafer processing, in particular to a reaction chamber and plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage, a state monitoring device, a rotation driving device and a control unit, and is characterized in that the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged around the outer side of the quartz tube; the Faraday shielding cage is provided with a slit, and the orthographic projection of the slit on the circumferential wall of the quartz tube forms an erosion area; the state monitoring device is used for monitoring the erosion area; the driving end of the rotary driving device is connected with the quartz tube or the Faraday shielding cage; the control unit is in communication connection with the state monitoring device and the rotary driving device; according to the invention, through real-time monitoring and an active regulation and control mechanism, the problem of concentrated erosion of plasma to the quartz tube in a high-hydrogen process is effectively solved.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and plasma processing equipment, and the reaction cavity comprises a quartz tube; the first coil surrounds the outer side of the quartz tube and is connected with an external radio frequency power supply; the Faraday shielding cage is annularly arranged outside the quartz tube and between the quartz tube and the first coil, and a plurality of slits which penetrate through the side wall of the Faraday shielding cage and extend in the axial direction are formed in the Faraday shielding cage; the blocking piece is arranged in the quartz tube, and a structure formed by orthographic projection of the blocking piece on the circumferential side wall of the Faraday shielding cage covers a structure formed by orthographic projection of the first coil on the circumferential side wall of the Faraday shielding cage; the blocking piece is arranged in the quartz tube, so that concentrated bombardment of plasma generated in the high-hydrogen process on the inner wall of the quartz tube can be effectively blocked, the problems of erosion of the quartz tube and particle stripping are remarkably relieved, the process yield of plasma processing equipment is increased, and the service life of a machine table is prolonged.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity and plasma processing equipment, comprising a quartz tube, an induction coil and a shielding member, the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged on the outer side of the quartz tube in a surrounding manner and comprises a plurality of annular sections which are arranged at intervals in the axial direction of the quartz tube and a plurality of connecting sections which are arranged between every two adjacent annular sections and are used for connecting every two adjacent annular sections; the shielding component is annularly arranged between the quartz tube and the induction coil and comprises a plurality of annular shielding parts arranged in the axial direction of the quartz tube and a plurality of arc-shaped shielding parts arranged between every two adjacent annular shielding parts and used for connecting every two adjacent annular shielding parts; a slit is formed between two adjacent annular shielding parts; concentrated bombardment of high-energy ions on the inner wall of the quartz tube can be obviously prevented, so that erosion of the quartz tube is effectively reduced, particulate matter is reduced, the service life of a machine is prolonged, and the process yield is increased.

The present disclosure describes a method for forming a nitrogen-rich protective layer within a low-k layer of a metallization layer to prevent damage to the low-k layer from subsequent processing operations. The method includes forming, on a substrate, a metallization layer having conductive structures in a low-k dielectric. The method further includes forming a capping layer on the conductive structures, where forming the capping layer includes exposing the metallization layer to a first plasma process to form a nitrogen-rich protective layer below a top surface of the low-k dielectric, releasing a precursor on the metallization layer to cover top surfaces of the conductive structures with precursor molecules, and treating the precursor molecules with a second plasma process to dissociate the precursor molecules and form the capping layer. Additionally, the method includes forming an etch stop layer to cover the capping layer and top surfaces of the low-k dielectric.

The invention relates to the technical field of shoes, and discloses a foot bed and leather integrally-formed structure and a preparation method thereof, and the foot bed and leather integrally-formed structure comprises a leather surface layer, a supporting core layer and a bottom layer; a preset circumferential and middle array type printing area on the lower surface of the leather surface layer is subjected to plasma treatment, sprayed with resin and subjected to UV curing to form an anchoring layer, the supporting core layer is connected to the anchoring layer on the lower surface of the leather surface layer through a bottom layer to be integrally formed in a composite mode, and the supporting core layer is of a latticed bionic lattice structure. The flexible supporting core layer of the latticed bionic lattice structure is processed through the technologies such as 3D printing, the flexible supporting core layer and the leather are integrally formed, the shoe pad detachably matched with a shoe for use is manufactured, the shoe pad has the ventilation and drainage functions through the supporting core layer in the shoe pad, the shoe pad can be conveniently matched with ventilation holes in a shoe body for use, and the moisture problem is solved; in the process of matching with ventilation of the supporting core layer, the flexible buffering pad supports the foot sole surface, the comfort degree is high, cleaning and maintenance are convenient, and the insole can flexibly adapt to different shoes and is high in applicability.

Some embodiments are directed to a method of processing a substrate in a plasma processing system. The method generally includes tuning a first capacitor and a second capacitor of a tuning circuit to match a first impedance corresponding to a first stage of a waveform, while a frequency of a radio frequency (RF) generator is preset to a first frequency; tuning a third capacitor of the tuning circuit and the frequency of the RF generator to match a second impedance corresponding to a second stage of the waveform, wherein the frequency of the RF generator is tuned to a second frequency; recording setting values of the first frequency and the second frequency that match different impedances at different stages of the waveform; and switching between the first frequency and the second frequency to match the different impedances at the different stages of the waveform.

An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.

A plasma processing apparatus includes a chamber, a bias power supply to supply a pulsed bias DC signal, a substrate support to support a substrate and an edge ring in the chamber, and an electrical path. The substrate support has an electrostatic chuck that includes a first region to hold the substrate and a second region provided around the first region and to hold the edge ring, and is formed from a dielectric, a first bias electrode inside the first region, a second bias electrode inside the second region, a base to support the electrostatic chuck, and a first impedance adjustment mechanism to have a first variable capacitor connected between the second bias electrode and the base.

An apparatus including a multi-station processing chamber with a top plate and a bottom portion encloses stations each including a pedestal assembly. A spindle centrally located between the stations is configured to rotate about a central axis, and is electrically connected to the bottom portion. An actuator controls movement of the spindle in the Z-direction. An indexer connected to the spindle rotates with the spindle, and includes extensions each configured to interface with a corresponding substrate for substrate transfer. An electrically conductive interface movably connected to the top plate provides an RF return path. Another actuator coupled to the grounding interface controls movement of the electrically conductive interface in the Z-direction. The electrically conductive interface moves downwards in the Z-direction to make contact with the indexer when each of the plurality of extensions is parked and the spindle is moved to a lower position during plasma processing.

A plasma processing control method for detecting an endpoint and controlling plasma processing is disclosed. The plasma processing control method includes tracking one or more harmonics that are produced due to nonlinearity of an impedance of a plasma environment. The one or more harmonics are associated with voltage, current, or a combination thereof. The plasma processing control method further includes analyzing the tracked one or more harmonics and detecting an endpoint of plasma processing based on the analysis of the tracked one or more harmonics. Thereafter, the plasma processing control method includes stopping the plasma processing based on the detected endpoint.

To deposit nanolaminates on a substrate, the substrate is mounted in a vacuum recipient on a substrate support in a peripheral region of a holder. The recipient comprises a sputter station with a sputtering target and a plasma treatment station with a plasma source, wherein the sputtering target and the plasma source are directed to different sections of the holder. A sputtering gas is introduced into the recipient, a reactive gas is introduced into the sputter station and the plasma treatment station, a magnetron discharge is ignited in the sputter station, and a plasma is ignited in the plasma treatment station. By rotation of the holder, the substrate is successively exposed to the magnetron discharge to deposit a well layer of high refractive index material having a layer thickness between 0.1 nm and 6 nm and to the plasma to produce a layer of low refractive index material.

The invention discloses a preparation method of a high-performance electric-breakdown-resistant capacitor base film, which comprises the following steps: S1, preparing modified polypropylene master batch: mixing polypropylene, a cycloolefin copolymer, a barium titanate-carbon nanotube modified composite filler and an antioxidant, and carrying out melt blending, extrusion and granulation to obtain the modified polypropylene master batch; s2, carrying out melt extrusion on the modified polypropylene master batch, cooling and casting; s3, carrying out two-way stretching and heat setting on the obtained casting piece to obtain a polypropylene film; and S4, performing plasma treatment on the surface of the polypropylene film to obtain the high-performance electric-breakdown-resistant capacitor base film. The high-performance electric-breakdown-resistant capacitor base film prepared by the method has excellent electric breakdown resistance, mechanical strength, flame retardance and heat resistance, has a long-acting flame retardant effect, is excellent in comprehensive performance and has a wide market application prospect.

A plasma processing apparatus includes a radio-frequency (RF) power supply; a pair of plasma electrodes, and a matcher disposed between the pair of plasma electrodes and the RF power supply. The matcher includes an RF feed line supplied with RF power from the RF power supply; a ground line; a first load line connected to one of the plasma electrodes; a second load line connected to the other of the plasma electrodes; an impedance matching circuit connected to the RF feed line, the first load line, the second load line, and the ground line, and including variable reactance elements; an RF sensor that is provided in the RF feed line and detects the RF power; a voltage sensor that detects a first peak value; and a matcher controller that controls the variable reactance elements by inputting detected values from the RF sensor and the voltage sensor.

The invention discloses aerogel thermal-insulation waterproof mortar and a preparation method thereof. The mortar is prepared from cement, hydrophobic aerogel, interface modified asphalt rubber powder, a composite phase change heat conduction material, blast furnace slag micro powder, silica fume, nano montmorillonite, titanium dioxide aerogel powder, expanded vermiculite, shape memory polymer emulsion, chitosan, charcoal powder, carbon fibers, basalt fibers and the like. The preparation method comprises the following steps: carrying out plasma treatment and modification with an organosilicon waterproofing agent to obtain hydrophobic aerogel; carrying out interface modification on the asphalt rubber powder by adopting a titanate coupling agent; a phase change microcapsule-carbon nanotube heat conduction network is constructed through ball milling compounding; a basic framework is formed by adopting a graded mixing process, and then functional components are introduced; and finally, realizing cross-linking curing of the shape memory polymer and the chitosan through ultrasonic assistance and programmed temperature control. The mortar prepared by the invention realizes integration of multiple functions, and effectively solves the technical problems of single performance and poor durability of a traditional thermal insulation material.

The invention discloses a plasma processing device and a working method thereof, and the plasma processing device comprises a vacuum reaction chamber which is internally provided with a lower electrode assembly; the direct current power supply and the first bias radio frequency power supply are electrically connected with the lower electrode assembly; the controller is used for controlling the direct-current power supply to provide a first pulse voltage for the lower electrode assembly, controlling the first bias radio frequency power supply to provide a first bias radio frequency voltage for the lower electrode assembly, and adjusting the phase difference between the first pulse voltage and the first bias radio frequency voltage to change the voltage of a plasma sheath layer on the surface of the substrate, the frequency of the first pulse voltage is consistent with the frequency of the first bias radio frequency voltage. The device has the advantages that the direct-current power supply, the first bias radio-frequency power supply and the controller are combined, the frequencies of voltages output by the direct-current power supply, the first bias radio-frequency power supply and the controller are controlled to be consistent through the controller, richer bias voltage waveforms are obtained under the condition that clutters are not introduced, and then accurate control over the substrate etching process is achieved.

The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and / or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and / or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and / or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.

The invention discloses an FPC film strain gauge and a manufacturing method thereof. The strain gauge comprises a flexible insulating substrate, a specific-component copper-nickel alloy layer (with 55% of Cu and 45% of Ni and the thickness of 1-5m) sputtered on the flexible insulating substrate, a plurality of independent sensitive grids etched on the alloy layer and arranged along different directions, and a signal lead on the other surface of the substrate, wherein the flexible insulating substrate is connected with the specific-component copper-nickel alloy layer through a via hole with a metalized hole wall. The manufacturing method comprises the steps of drilling, three-step plasma treatment, magnetron sputtering of alloy, electroplating of copper to reinforce the hole wall, double-sided photoetching and etching and the like. Through glue-free sputtering combination and a specific alloy formula, the problems of glue layer aging and temperature drift of a traditional strain gauge are solved, and the product has the advantages of being ultrathin, flexible, high in stability, high in precision and suitable for batch production.

The invention discloses an organic solvent-resistant nanofiltration membrane and a preparation method thereof, and belongs to the technical field of nanofiltration membranes. The preparation method comprises the following steps: performing plasma treatment on a PE (Poly Ethylene) porous base membrane, vacuumizing, introducing inert gas for plasma activation, introducing amino-containing precursor gas for amination, and performing vacuum impurity removal and normal-pressure inflation to obtain an aminated base membrane; and immersing into a water-phase solution containing a water-phase monomer and an imidazole monomer, taking out, removing redundant solution, covering the plasma treatment surface with an organic-phase solution, carrying out interfacial polymerization to form a polyamide composite desalination layer containing an imidazole structure, and drying to obtain a finished product. The desalination layer in the prepared nanofiltration membrane is connected with the base membrane through a C-N covalent bond, the retention rate of MgSO4 is greater than or equal to 99.16% and the permeability of DMF is greater than or equal to 93.54% for a 10g / L DMF and 2000ppm MgSO4 system under the conditions of 1MPa and 25 DEG C, and the performance is stable after the DMF is soaked for 30 days.

The invention discloses porous carbon with a gradient structure, a preparation method of the porous carbon and application of the porous carbon in a negative electrode of a lithium ion battery. The porous carbon has a gradient structure with compact micropores on the surface and loose macropores inside. The preparation method of the porous carbon comprises the following steps: carrying out oleophylic modification on SiO2 to obtain hydrophobic SiO2; carrying out hydrophilic coating on NH4Cl to obtain PVP (Polyvinyl Pyrrolidone) coated NH4Cl; the preparation method comprises the following steps: mixing coal pitch, methylbenzene, oleic acid, hydrophobic SiO2 and PVP (at) NH4Cl to form a suspension; preparing a spherical precursor by a micro-fluidic emulsification method; and carbonizing, sequentially carrying out oxygen plasma treatment and HF solution etching, and removing the template to obtain the porous carbon with the gradient structure. The gradient distribution of the template and the pore-forming agent is realized through surface modification difference and a microfluidic technology, the pore structure and the particle size can be accurately regulated and controlled, the process is simple, the compatibility is high, the prepared porous carbon can be used as a substrate for a silicon-carbon composite negative electrode material, the volume expansion of silicon can be effectively buffered, and the service life of the silicon-carbon composite negative electrode material is prolonged. And the first coulombic efficiency, the specific capacity and the cycling stability of the lithium ion battery are improved.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The invention relates to the technical field of gas adsorption materials, in particular to a plasma modified UiO-66-NH2 / activated carbon composite filter material as well as a preparation method and application thereof. The preparation method comprises the following steps: adding activated carbon into a UiO-66-NH2 precursor solution, vacuumizing in a vacuum drying oven for 1-3 hours, then transferring into a reaction kettle, heating to 80-120 DEG C, reacting for 20-25 hours, cooling to room temperature, washing and drying to obtain a UiO-66-NH2 / activated carbon composite material; and placing the UiO-66-NH2 / activated carbon composite material in a plasma reactor, and carrying out plasma treatment by taking H2 / Ar as a working gas to obtain the plasma-modified UiO-66-NH2 / activated carbon composite material. According to the invention, UiO-66-NH2 is loaded in the activated carbon, so that the effects of increasing the specific surface area of the activated carbon and developing a microporous structure are achieved, the adsorption capacity of low-concentration trichloro ethylene reaches 281 mg / g, and the UiO-66-NH2 loaded activated carbon is a filter material for effectively adsorbing trichloro ethylene (TCE).

An apparatus for plasma processing comprises: a support configured to support a substrate and an edge ring disposed around the substrate; a lifting mechanism configured to vertically move the edge ring; and a controller. The support includes a convex portion which protrudes upward and on which the substrate is mounted, a ring mounting portion on which the edge ring is mounted in a state in which the convex portion is inserted into the hole of the edge ring, and a temperature adjustment mechanism configured to adjust a temperature of the convex portion. The lifting mechanism and the temperature adjustment mechanism are configured to move the edge ring to a predetermined position at which the convex portion is in a state of being inserted into the hole of the edge ring and heat the convex portion of the support to expand it in a diametric direction thereof.

The invention relates to the technical field of semiconductor etching, and provides a low-power etching method for reducing plasma damage, which is characterized by comprising the following steps: providing a to-be-etched substrate in a cavity of a plasma processing device, the surface of the to-be-etched substrate at least comprising a to-be-etched layer and a mask layer; process gas is introduced into the chamber; applying a pulsed source power to generate a plasma within the chamber, the pulsed source power comprising alternating on-periods and off-periods; applying bias power to the substrate in the starting time period; establishing an etching model and obtaining an optimal etching parameter combination by adopting a genetic algorithm; and etching the layer to be etched by using the plasma. According to the method, the etching parameters are optimized by adopting the pulsed source power and the genetic algorithm, so that the effects of reducing plasma damage and improving the etching uniformity are achieved.

Disclosed herein is a system and method for optimizing RF power delivery to a plasma process chamber. This invention utilizes a data-driven approach to determine resonant frequencies for various plasma states, eliminating the need for conventional PID controls. By collecting performance data from an RF power generator as a function of operating frequency during the process recipe execution and analyzing portions of the waveform, the system continuously identifies resonating frequencies for each plasma state. Consequently, the RF power generator adapts in real-time to deliver optimal stability and performance.

The etching method disclosed herein includes a process (a) of preparing a substrate within a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method also includes a process (b) of etching the silicon-containing film by chemical species from a plasma formed from a process gas within the chamber. The process gas includes a phosphorous-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. The hydrogen-containing gas contains at least one selected from the group consisting of hydrogen fluoride, H2, ammonia, and a hydrocarbon.

Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode chip which comprises a substrate, and an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer and a composite passivation layer are sequentially stacked on the substrate. The composite passivation layer comprises a modified h-BN sub layer and an Al2O3 sub layer which are stacked in sequence, and the Al2O3 sub layer is arranged on the modified h-BN sub layer; the modified h-BN sub-layer is subjected to N2O plasma treatment, and the thickness of the modified h-BN sub-layer is 1nm-5nm; the thickness of the Al2O3 sub layer ranges from 10 nm to 100 nm. The chip provided by the invention has the advantages of good water vapor permeation prevention performance, high light extraction rate, low defect density and long device service life.

The invention relates to the technical field of advanced thermal interface materials, in particular to a high-thermal-conductivity boron nitride insulating heat-conducting gasket and a preparation method and application thereof. The heat-conducting gasket is prepared from the following raw materials in parts by weight: 1000 parts of organic silica gel, 50 to 500 parts of modified boron nitride, 50 to 200 parts of diluent and 150 to 1500 parts of auxiliary heat-conducting filler, according to the heat-conducting gasket, the sheet-shaped boron nitride is oriented in a plane parallel to the horizontal plane through a rolling-hot pressing synergistic orientation technology. Vacuum plasma treatment, in-situ silanization modification and ultrasonic dispersion are integrated, and continuous and automatic production of BN surface treatment is achieved. Meanwhile, by optimizing a rolling-hot pressing synergistic process, directional arrangement and tight stacking of the BN sheet layers are promoted, an efficient three-dimensional heat conduction network is formed, and the heat conduction performance of the composite gasket is remarkably improved.