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2991 results about "Aluminum substrate" patented technology

Aluminium Substrate. Because the anodic film generated by the anodising process is transparent, any defects in the underlying aluminium substrate will remain visible after anodising.

LED straight lamp made of transparent glass tube

The invention discloses an LED straight lamp made of a transparent glass tube. The LED straight lamp comprises a transparent glass tube body (20) and two lamp holders (10 and 11). Both the transparent glass tube body (20) and the lamp holders (10 and 11) meet the specifications of an ordinary straight tube fluorescent lamp, and the lamp holders (10 and 11) are respectively adhered to two ends of the transparent glass tube body (20). The LED straight lamp made of the transparent glass tube can also be made by the glass burn sealing technology of the ordinary straight tube fluorescent lamp. LED lamp filaments are directly welded to welding platforms (33) of LED supports (31) in the middle of an aluminum substrate (30). The outside of the bottom cross section of the aluminum substrate (30) is circular arc shaped with the curvature matching with that of the inner side of the cross section of the transparent glass tube body (20). Enough height is to be reserved between the welding platforms (33) and the aluminum substrate (30) so that light emitted from the LED lamp filaments is orthogonal to the inner wall of the transparent glass tube body (20), light consumption brought by multiple reflections is reduced, and the beam angle of the LED straight lamp made of the transparent glass tube can reach more than 300 degrees.
Owner:匡正芳

Graphene modified high-heat-conductivity aluminum-based composite material and powder metallurgy preparation method

The invention provides a graphene modified high-heat-conductivity aluminum-based composite material and a powder metallurgy preparation method thereof. The material comprises reinforced grains and an aluminum substrate, wherein the composite boundary of the reinforced grains and the aluminum substrate contains high-heat-conductivity graphene nanosheets. The method comprises the following steps: (1) soaking the reinforced grains with a strong acid solution, subsequently washing with deionized water till being neutral, drying, and removing the surface impurities, thereby obtaining activated reinforced grains; (2) adding the activated reinforced grains into a graphene dispersion liquid, mechanically stirring or performing ultrasonic dispersion, and wrapping the graphene nanosheets on the surface, thereby preparing the graphene modified reinforced grains; and (3) mixing the graphene modified reinforced grains with the aluminum substrate powder, pressing into blanks, and sintering, thereby preparing the graphene modified high-heat-conductivity aluminum-based composite material. The composite material provided by the invention is good in chemical stability, high in thermal conductivity and can be used as a heat management material of a large-power semiconductor device.
Owner:SHANGHAI JIAO TONG UNIV

Silicon carbide reinforced aluminum-based composite material and its preparation method

The invention relates to a silicon carbide reinforced aluminum-based composite material and its preparation method. The composite material is characterized by being composited by micron-scale and nano-scale beta-phase silicon carbide spherical particles and an aluminum substrate, with the beta-phase silicon carbide spherical particles distributed in the aluminum substrate to form a synergistic reinforced phase. The preparation method is summarized to be mainly composed of: pre-preparing beta-phase silicon carbide spherical particles, adding aluminum substrate powder and the beta-phase silicon carbide spherical particles accounting for 0-25wt% of the composite material into a ball mill for ball milling treatment, and conducting cold press molding, sintering, as well as air hot pressing sequentially, and finally carrying out hot extrusion molding to obtain a molded product of the composite material. Specifically, the particle size of the aluminum substrate powder is 1micrometer to 100micrometers. The technical scheme of the invention innovatively uses spherical particulate beta-phase silicon carbide and makes use of the synergistic reinforcement effect of the micron and nano-silicon carbide particles, substantially improves the strength, toughness, abrasion resistance and others of the aluminum-based composite material. The preparation process is simple, and the cost input is effectively reduced.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1

LED daylight lamp tube

The invention discloses an LED daylight lamp tube, comprising a tube body and caps fixedly connected to two ends of the tube body, wherein the tube body comprises: an axial bar-shaped radiator, a radiating face of which is fan-shaped and a heat conducting face of which is provided with at least two axial bar-shaped slots forming included angle; an illuminant, which comprises PCB aluminum substrates corresponding in amount to the bar-shaped slots of the radiator, wherein the front face of each of the PCB aluminum substrates is equipped with a plurality of LED illuminants and the PCB aluminum substrates are clamped in the bar-shaped slots of the radiator; a bar-shaped heat conducting gasket, which is adhered to the back face of the PCB aluminum substrate in a fitting manner and clamped between the PCB aluminum substrate and a heat conducting face of the bar-shaped slot; and a circular arc lampshade, which is in clamped connection with two sides of the radiator and forms the cylindrical tube body with the radiator together. According to the LED daylight lamp tube of the invention, the PCB aluminum substrates of the LED illuminants are installed on the fan-shaped radiator at an included angle of 210 degrees, and wide-angle illumination of the LED daylight lamp tube is realized through the two movable caps arranged at two ends of the tube, in addition, the LED daylight lamp tube has better radiating effect and longer service life.
Owner:SHENZHEN EVITEO IMP&EXP

Halogen-free high heat-resistant and heat-conducting resin film and manufacturing method thereof

The invention discloses a halogen-free high heat-resistant and heat-conducting resin film and a manufacturing method thereof. The halogen-free high heat-resistant and heat-conducting resin film is prepared by semi-curing of a heat-conducting resin liquid, wherein the heat-conducting resin liquid is prepared from 70 to 100 parts of a halogen-free epoxy resin, 0 to 30 parts of one or more flexibilizers, 80 to 120 parts of one or more solvents, 1 to 20 parts of one or more curing agents, 0.01 to 1 part of one or more promoters, 0.5 to 5.0 parts of a coupling agent and 80 to 600 parts of one or more high heat-conducting filling materials. The halogen-free high heat-resistant and heat-conducting resin film has a thermal conductivity great than or equal to 2.5W / m.K and heat resistance (at a temperature of 300 DEG C) great than or equal to 300s. The halogen-free high heat-resistant and heat-conducting resin film has flexibility so that the problem of brittleness of the traditional heat-conducting materials is solved. An aluminum substrate prepared from the halogen-free high heat-resistant and heat-conducting resin film is suitable for electronic products such as LED, vehicle systems and variable-frequency power sources needing good heat conductivity, can greatly improve the thermal diffusivity of the electronic products, and has high reliability and energy-saving and environmental-protection effects.
Owner:ZHEJIANG WAZAM NEW MATERIAL CO LTD

Catalyst and process for hydrocracking hydrocarbon-containing feedstocks

This invention relates to silico-aluminum substrates, catalysts, and the hydrocracking and hydrotreatment processes that use them. The catalyst comprises at least one hydro-dehydrogenating element that is selected from the group that is formed by elements of group VIB and group VIII of the periodic table and a non-zeolitic silica-alumina-based substrate that contains an amount of more than 5% by weight and less than or equal to 95% by weight of silica (SiO2) and has the following characteristics: A mean pore diameter, measured by mercury porosimetry, encompassed between 20 and 140 Å, a total pore volume, measured by mercury porosimetry, encompassed between 0.1 ml/g and 0.6 ml/g, a total pore volume, measured by nitrogen porosimetry, encompassed between 0.1 ml/g and 0.6 ml/g, a BET specific surface area encompassed between 100 and 550 m<2>/g, a pore volume, measured by mercury porosimetry, encompassed in the pores with diameters of more than 140 Å, of less than 0.1 ml/g, a pore volume, measured by mercury porosimetry, encompassed in the pores with diameters of more than 160 Å, of less than 0.1 ml/g, a pore volume, measured by mercury porosimetry, encompassed in the pores with diameters of more than 200 Å, of less than 0.1 ml/g, a pore volume, measured by mercury porosimetry, encompassed in the pores with diameters of more than 500 Å, of less than 0.01 ml/g, an X diffraction diagram contains at least the main lines that are characteristic of at least one of the transition aluminas contained in the group that consists of the alpha, rho, chi, eta, gamma, kappa, theta and delta aluminas.
Owner:INST FR DU PETROLE

Method for preparing pore diameter controllable through hole anodized aluminum oxide film

The invention relates to technology for preparing an anodized aluminum oxide film, in particular to a method for preparing a pore diameter controllable through hole anodized aluminum oxide film. The method comprises the following steps of: performing anode electrolysis treatment on an anodized aluminum oxide film with an aluminum substrate in mixed solution of perchloric acid and acetone to obtain a pore diameter controllable anodized aluminum oxide film with two open ends in short time (2-300 seconds), wherein the pore diameters at the top end and the bottom end fo the anodized aluminum oxide film are accurately controllable in ranges of between 10 and 100nm and between 5 and 25nm; and putting the aluminum oxide film with the aluminum substrate subjected to stage depressurization-method oxidation into acetone solution of perchloric acid, and applying voltage 5-15V higher than film forming voltage for anode electrolysis treatment to obtain the pore diameter controllable through hole anodized aluminum oxide film. In the method, the pore diameters at the top end and the bottom end of the anodized aluminum oxide film can be respectively controlled, holing and removal of the aluminum substrate are completed by one step, and a plurality of problems of complicated process, time consumption, difficult control of pore diameters and the like in the conventional process for preparing the through hole anodized aluminum oxide film.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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