3888 results about "High productivity" patented technology

A chip stack package is manufactured at a wafer level by forming connection vias in the scribe lanes adjacent the chips and connecting the device chip pads to the connection vias using rerouting lines. A lower chip is then attached and connected to a substrate, which may be a test wafer, and an upper chip is attached and connected to the lower chip, the electrical connections being achieved through their respective connection vias. In addition to the connection vias, the chip stack package may include connection bumps formed between vertically adjacent chips and/or the lower chip and the substrate. The preferred substrate is a test wafer that allows the attached chips to be tested, and replaced if faulty, thereby ensuring that each layer of stacked chips includes only “known-good die” before the next layer of chips is attached thereby increasing the production rate and improving the yield.

An atomic layer deposition (ALD) apparatus is, suitable for thermal ALD and plasma-enhanced ALD of conductive and non-conductive films. The ALD apparatus can maintain electrical insulation of a gas dispersion structure, such as a showerhead assembly, which acts as an RF electrode to generate plasma inside a reaction chamber while depositing electrically conductive films in the reaction chamber. Fine tubules of micro-feeding tube assembly prevents plasma generation in them and reactive gases each have separate flow paths through the micro-feeding tube assembly. Process gases out of the micro-feeding tube assembly enter narrow grooves of a helical flow inducing plate and form helical flows which mix well each other. Symmetrically mounted pads on showerhead assembly and flow guiding plate maintain a symmetrical gap through which an inert gas flows continuously to keep reactive gases outside the gap and unwanted film deposition in the gap. Longer operating time before maintenance (cleaning) and thus higher productivity can be achieved.

To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.

The present invention relates to a tubular suture reinforcement material suitable for use in automatic suturing devices that are widely used in surgical operations, etc. More specifically, the present invention relates to a tubular suture reinforcement material with which a tubular shape is easily obtained to thereby increase its productivity, and removal of thread is easily achieved. The present invention aims to overcome drawbacks such that sheet-like materials joined by the conventional temporary adhesion easily separate from each other, and the tubular suture reinforcement material manufactured using a running stitch requires a lot of time and skill, and removal of the thread is difficult depending on the kind of sheet-like material, sewing pitch, etc. More specifically, the present invention relates to a tubular suture reinforcement material for an automatic suturing device, wherein both ends of one or two sheet-like materials are sewed using a chain stitch (intralooping stitch) with a single thread to form a tubular shape, and one or two thread ends at one or two sewing ends are suitably extended.

The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

An optical lens is provided. The optical lens provides miniaturization and thin size, and reduces the cost and improves productivity by simplifying the structure and manufacturing process. The optical lens includes a light-transmitting substrate with a lens chamber and a fluidic chamber that are connected with each other. The optical lens also includes a light-transmitting elastic film which seals the lens chamber, a buffer elastic film which seals the fluidic chamber, and an actuator on the buffer elastic film which corresponds to the fluidic chamber, and varies the volume of the fluidic chamber to vary a pressure acting on the light-transmitting elastic film.

The present invention is to provide a CVD apparatus having a high productivity, involving less contamination on the back surface of a substrate and having a high yield. A CVD apparatus for forming a thin film is characterized in that the interior of the vessel is divided into a upper portion and a lower portion (transfer chamber) by a support member for holding the ring chuck and the upper portion is further divide by inner wall into a deposition chamber and an exhaust chamber in axial symmetry around the same central axis. The deposition chamber communicated to the exhaust chamber through a gap between the inner wall and the ring chuck and/or holes provided in the inner wall. The transfer chamber is communicated to the deposition chamber or exhaust chamber through a gap formed between the ring chuck and the support member.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.

There is provided an image processing apparatus comprising a display, a display switching section, a designation section and a red eye correction section, wherein the display switching section switches in such a way that at least a region designated by the designation section in an image is displayed on the display at high resolution before or after, or both before and after the region is processed by the red eye correction section. The image processing apparatus is capable of effectively performing the red eye correction processing by simple manipulation and outputting an image of high quality without a red eye effect in high productivity.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

A surface-modified water-absorbent resin powder is produced continuously with high productivity in a state where the particle diameter distribution is narrow and where the properties are high by a process comprising a polymerizing step, a drying step, a pulverizing step, a classifying step, and a surface-modifying step, and further, conveying steps of connecting them, wherein the conveying steps include at least two hoppers for storing the water-absorbent resin powder. A powder surface detector used favorably for this process includes a float hung down by a hanging line.

An LED assembly including a wiring substrate with an opening at its center; a heat sink housed inside the opening; an LED chip mounted on the heat sink; a connecting section for electrically coupling the LED chip and wiring substrate; and a transparent resin covering the LED chip and connecting section. Heat generated from the LED chip is efficiently dissipated, and high productivity is also achievable.

An object of the present invention is to supply a semiconductor device capable of communicating data through radio communication, such as an RFID tag or a label-like object, with high productivity at low cost. In the invention, a memory portion, a signal control circuit portion and a communication circuit portion are formed with the use of a TFT formed over an insulating substrate, and the insulating substrate is fixed opposite to a support provided with an antenna so that the antenna is connected to a terminal portion connected to a communication circuit. The invention is an RFID tag and a label-like object including an ID chip whose memory portion, signal control portion and communication circuit portion are formed with the use of TFTs formed over an insulating substrate and an antenna formed to connect to a terminal portion of the ID chip, in which data stored in a memory portion or data to be stored in a memory portion can be communicated through a communication circuit by radio communication.

There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same.In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.

There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.

Certain example embodiments of this invention relate to electrochromic (EC) devices, assemblies incorporating electrochromic devices, and/or methods of making the same. More particularly, certain example embodiments of this invention relate to improved EC materials, EC device stacks, high-volume manufacturing (HVM) compatible process integration schemes, and/or high-throughput low cost deposition sources, equipment, and factories.

A vehicle seat for cooling and heating may include a seat pad, a mesh sheet having a certain thickness, a first film, and a porous seat cover, which are arranged sequentially in the direction in which air is introduced to flow. The seat pad has a pad hole, which allows air to pass through, and includes one or both of a seat cushion pad, which supports the buttocks of a user, and a seatback pad, which supports the upper body of the user. The mesh sheet has a porous network structure, through which air easily passes. The first film has a first film hole, which allows air to pass through. Air passages are maintained stable to maximize blowing performance, seating comfort is improved, and a ventilation structure is simplified to reduce manufacturing costs while improving productivity.

The present invention provides a method for producing a polyolefin composition having a narrow composition distribution and is characterized in that when at least two olefins are copolymerized in the presence of a transition metal compound catalyst using at least two gas phase fluidized bed reactors, a saturated aliphatic hydrocarbon is allowed to exist in each reactor in a concentration from 0.1 to 30 mol %, and the ratio of the concentration (C2) of a saturated aliphatic hydrocarbon in a reactor of a second stage to the concentration (C1) of a saturated aliphatic hydrocarbon in a reactor of a first stage (C2/C1) is 0.13 or more. Further, the present invention provides a method for producing a polyolefin composition by multi-stage polymerization, which can prevent sheeting in the reactor and can give a polyolefin composition stably with high productivity, and is characterized in that a saturated aliphatic hydrocarbon is allowed to exist in a transport line for transporting a polymer particle extracted from a fluidized bed reactor in the previous stage to a fluidized bed reactor in the subsequent stage at a concentration from 0.1 to 30 mol %.