2781 results about "Depth direction" patented technology

An image processing apparatus for generating a three-dimensional model of a three-dimensional object from an image displaying the object in two dimensions includes a three-dimensional model generator operable to generate the three-dimensional model of the object from the image, and an extender operable to extend a lateral region of the three-dimensional model in a depth direction orthogonal to the two dimensions.

A through hole tapered from an opening to the in-depth direction is formed in a semiconductor substrate provided with an integrated circuit. An insulating material is supplied to the through hole through the opening so as to form an insulating layer on the inner surface of the through hole. A conductive material is supplied through the opening to the through hole provided with the insulating layer so as to form a conductive portion inside the insulating layer.

In a thumbnail screen, categories and category thumbnails are disposed and displayed in the depth (Z-axis) direction and in the horizontal (X axis) direction, respectively. When focus is given by a focus to any of upper and lower category thumbnails, which are displayed on the most front side, and a category name display part, the row (layers) of the thumbnails scrolls in the horizontal direction. When the right and left direction keys of a remote controller are operated while the category name display has focus, the scroll in the depth direction is performed, thus enabling the specification of a desired category. This three-dimensionally displays the thumbnails and facilitates the operation for viewing information.

A disk array apparatus including a rack-shaped basic frame, and a plurality of disk boxes that can be inserted into and pulled out of the basic frame depth-wise. Each disk box has: disk drive connectors for connecting a plurality of disk drives arranged in a matrix on a platter substrate, which is the bottom face of the disk box, roughly parallel to the depth direction of the basic frame; and a cooling module for cooling the disk drives. The disk box is a hermetically sealed structure.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

In a shelf apparatus for a showcase, which is provided with a shelf support for supporting a shelf plate on which commodities are placed so as to be slidable in a depth direction, the shelf apparatus is constructed so that the shelf support is provided with a locking plate extending in a width direction of the shelf plate, and the shelf plate is provided with a hooking member which is formed with a steel rod member which extends in the depth direction and whose rear portion further extends along the locking plate on a back surface side of the shelf plate, and also which enables the rear portion to be locked to and unlocked from the locking plate by being swayed vertically. When the shelf plate is held on the shelf supports, the rear portion of the hooking member is locked to the locking plate. By doing this, the shelf plate does not slide forward. When the shelf plate is pulled out forward, the hooking member is unlocked from the locking plate by being swayed vertically. By doing this, the shelf plate can be pulled out forward.

A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of modifying region groups, are successively formed. One set of modifying region groups constitutes two layers and is formed at a time. The modifying region groups are separated, adjoined, or overlapped with each other along an estimated cut line of the wafer in a depth direction from a surface thereof.

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

In the manufacture of a semiconductor device by adopting a block molding method wherein a semiconductor chip is fixed onto a wiring substrate through an adhesive, the occurrence of a defect caused by flowing-out of the adhesive is to be prevented. The semiconductor device according to the present invention comprises a wiring substrate, the wiring substrate having a main surface, an insulating film formed on the main surface, and electrodes formed on the main surface so as to be exposed from the insulating film, a semiconductor chip fixed through an adhesive onto the insulating film formed on the main surface of the wiring substrate, conductive wires for connecting the electrodes on the main surface of the wiring substrate and electrodes on the semiconductor chip with each other, and a seal member, i.e., a package, which covers the semiconductor chip, the main surface of the wiring substrate and the electrodes, wherein a groove is formed between the semiconductor chip and the electrodes and the seal member and the wiring substrate have side faces cut by dicing. A protruding portion of the adhesive (an insulating resin) stays within the groove without getting over the groove and does not reach the electrodes. The groove is formed by removing the insulating film partially in the full depth direction of the film so as to extend through the film.

The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device 1 having the global shutter function, a first charge accumulation unit 18 and a second charge accumulation unit 25 are stacked in the depth direction of a substrate 12, and the transfer of the signal charges from the first charge accumulation unit 12 to the second charge accumulation unit 25 is conducted by a vertical first transfer transistor Tr1. Thus, the pixel miniaturization can be achieved.

A semiconductor device with a new three-dimensional structure comprises a semiconductor substrate including a trench vertically formed to a surface of the semiconductor substrate, a plurality of isolations formed in side and bottom surfaces of the trench in a depth direction of the trench, a plurality of functional elements formed on the side surfaces of the trench separated be the isolation and including an insulator, an electrode formed on the insulator and a pair of source/drain formed in the both sides of the electrode in the depth direction, and a wiring connected to the electrodes located in both sides of the isolation.

An ultrasonic diagnostic apparatus removes a speckle pattern using information on a direction (depth direction) that is substantially orthogonal to a plurality of ultrasonic images included in three-dimensional image data. For example, three-dimensional CFAR processing, two-dimensional CFAR processing, and a depth-direction arithmetic process are performed to discriminate a continuous structure that is three-dimensionally arranged from a local microstructure, thereby generating a microstructure extracted image.

An optical coherence tomography apparatus based on spectral interference where object information can be speedily obtained and an information acquisition range in a depth direction can be enlarged, and an ophthalmic apparatus. The apparatus includes a first optical system for projecting light with short coherence length onto an object to form object light which is reflection light from the object, a second optical system for projecting light with short coherence length onto a reference surface to form reference light which is reflection light from the surface, an optical system for synthesizing the object light and the reference light to be interference light, dispersing the interference light into predetermined frequency components and photo-receiving the dispersed light with a photodetector, a device varying a spectral characteristic when the interference light is dispersed by the interference/dispersion/photo-receiving optical system, and a calculation part obtaining the information based on an output signal from the photodetector.

In conventional mesa-type npn bipolar transistors, the improvement of a current gain and the miniaturization of the transistor have been unachievable simultaneously as a result of a trade-off being present between lateral diffusion and recombination of the electrons which have been injected from an emitter layer into a base layer, and a high-density base contact region—emitter mesa distance. In contrast to the above, the present invention is provided as follows:

• • The gradient of acceptor density in the depth direction of a base layer is greater at the edge of an emitter layer than at the edge of a collector layer. Also, the distance between a first mesa structure including the emitter layer and the base layer, and a second mesa structure including the base layer and the collector layer, is controlled to range from 3 μm to 9 μm. In addition, in order for the above to be implemented with high controllability, the base layer is formed of a first p-type base layer having an acceptor of uniform density, and a second p-type base layer whose density is greater than the uniform acceptor density of the first base layer while having a gradient in the depth direction of the second base layer. These features produce the advantageous effect that it is possible to provide a high-temperature adaptable, power-switching bipolar transistor that ensures a current gain high enough for practical use and is suitable for miniaturization.

An alternator includes a stator having an annular stator core provided with a number of slots extending axially disposed in lines circumferentially so as to open on an inner circumferential side and a stator coil wound into the stator core so as to be installed in the slots, a rotor having a number of claw-shaped magnetic poles for alternately forming north-seeking (N) and south-seeking (S) poles about a rotational circumference, the rotor being rotatably disposed on the inner circumferential side of the stator core, a bracket supporting the rotor and the stator, and a rectifier disposed at a first axial end of the stator and connected to end portions of the stator coil, the rectifier converting alternating current from the stator coil into direct current, wherein a number of slots is two per phase per pole, and the stator coil comprises a number of winding sub-portions in each of which a long strand of wire is wound so as to alternately occupy an inner layer and an outer layer in a slot depth direction within the slots at intervals of a predetermined number of slots by folding back the strand of wire outside the slots at axial end surfaces of the stator core.

An optical element includes a base and a large number of structures arranged on the surface of the base, the structures being projections or depressions. The structures are arranged at a pitch shorter than or equal to a wavelength of light in a use environment. An effective refractive index in the depth direction of the structures gradually increases toward the base and has two or more inflection points.

Three-dimensional position information of each of feature points in a left and a right image is calculated based on a disparity between the left and right images; a lane marker existing on a road surface is detected from each of the left and right images; based on three-dimensional position information of a lane marker in a neighboring road surface area, by extending the lane marker to a distant area, a lateral direction position, and a depth direction position, of the extended lane marker in the distant area are estimated; an edge segment of a certain length or more is detected from feature points in the distant area in each of a plurality of images; three-dimensional position information of the edge segment is calculated; and, based on the three-dimensional position information of the edge segment, and on the extended lane marker information, a road incline in the distant area is estimated.

A confocal scanning microscope includes a stimulating light beam scanning unit that scans at least a predetermined plane perpendicular to the depth direction of the stimulating light beam focal position, a stimulating light beam scanning control unit that controls the scanning area of the stimulating light beam to a desired area, an exciting light beam scanning control unit that controls the scanning area of the exciting light beam to a desired area, an exciting light beam focal position changing unit, provided in an excitation fluorescence optical path, which is a portion of an optical path where the exciting light beam and the fluorescence pass and located outside a common optical path where the exciting light beam, the fluorescence, and the stimulating light beam pass, that changes at least the exciting light beam focal position in the depth direction, and an exciting light beam control unit that controls the exciting light beam focal position variably to a desired position.

A solid-state imaging device includes multiple pixels formed of photoelectric converters and pixel transistors; a floating diffusion portion that exists within a region of each of the photoelectric converters when viewed from above; and a vertical transfer gate electrode of a transfer transistor that surrounds at least a portion of each photoelectric converter and is formed in the depth direction of a substrate and makes up the pixel transistor.