The invention relates to the technical field of
semiconductor manufacturing, photoetching alignment and
feature recognition, and particularly discloses a photoetching alignment compensation
system and method based on feature targeting. An exposed pattern on the surface of a
wafer is used as a unique target reference, a built-in visual imaging structure coaxial with a photoetching light path is adopted, a sub-pixel-level
feature extraction and dynamic reference real-time updating mechanism is combined, the dynamic deformation of the
wafer is calculated, high-
frequency compensation of a workpiece table is achieved, and nanoscale
overlay precision is achieved. The core improvement of the invention lies in that a light path coaxial visual integrated structure is designed to solve the problem of external imaging
parallax; a feature point self-adaptive weighted matching
algorithm is provided, and the deformation compensation precision is improved; and constructing a
reference map real-time micro-updating mechanism, and eliminating progressive deformation drift of the
wafer. The
system does not need to manufacture a special physical alignment mark, continuously verify a
feature matching state in the whole
exposure process and quickly trigger safety protection when the matching degree is abnormal, is suitable for a photoetching alignment process for manufacturing advanced process chips of 3nm and below, has an alignment error of less than or equal to 1.1 nm under a 12-inch wafer
standard test condition, reduces the dependence on an ultra-precise workpiece table, and has a good application prospect. The
system has the advantages of autonomous
controllability, high
interference resistance and controllable cost.