Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

a field-effect transistor and light-shielding member technology, applied in the direction of instruments, semiconductor devices, electrical apparatus, etc., can solve the problems affecting the stable performance of the

Inactive Publication Date: 2007-04-26
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0013] The present invention provides a field-effect transistor including a l

Problems solved by technology

Such a change may affect the stable performance of the TFT.
However, the light-shielding structure may be unnecessary depending on the use of a TFT, i.e., when visible light

Method used

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  • Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
  • Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
  • Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

Incident Light from Substrate Side

[0031] Light entering from the substrate side toward the active layer is shielded when light-shielding films are provided at the positions shown in FIGS. 1 to 3.

[0032] Preferably, the light-shielding film has a light-shielding property to visible light having a wavelength range of 400 to 800 nm. More preferably, the light-shielding film further has a light-shielding property to light or an electromagnetic wave having a wavelength of 400 nm or less (for example, the wavelength range of 100 to 400 nm).

[0033] The transparent oxide (for example, transparent amorphous oxide) in the present invention causes a phenomenon of photocarrier generation in the shorter-wavelength region of visible light. Therefore, in particular, it is preferable that the light-shielding film have a light-shielding property to at least light or an electromagnetic wave having a wavelength range of 300 to 500 nm.

[0034] In addition, the light-shielding film is not required to hav...

second embodiment

ncident Light from the Side Opposite the Substrate

[0043] In order to shield the incident light from the side opposite the substrate, a light-shielding film 4090 is provided as shown in FIG. 4A.

[0044] Preferably, the light-shielding film 4090 has a light-shielding property to visible light having a wavelength range of 400 to 800 nm. More preferably, the light-shielding film further has a light-shielding property to an electromagnetic wave having a wavelength of 400 nm or less (for example, the wavelength range of 100 to 400 nm).

[0045] The transparent oxide (for example, amorphous oxide) in the present invention causes a phenomenon of photocarrier generation in the shorter-wavelength region of visible light. Therefore, in particular, it is preferable that the light-shielding film have a light-shielding property to at least light or an electromagnetic wave having a wavelength range of 300 to 500 nm.

[0046] In addition, the light-shielding film is not required to have a transmittance ...

third embodiment

[0053] A display provided with a field-effect transistor (specifically TFT) described in the first or second embodiment will now be described.

[0054] The structure used in a display is as follows:

[0055] The drain electrode functioning as an output terminal of a TFT is connected to an input electrode of a light-emitting device such as an electroluminescence device using an organic or inorganic material, a light-transmittance-controlling device of a liquid-crystal cell or an electrophoretic particle cell, or a light-reflectance-controlling device.

[0056] For example, as shown in FIG. 5, an amorphous oxide semiconductor film 5002, a source electrode 5003, a drain electrode 5004, a gate-insulating film 5005, and a gate electrode 5006 are deposited and patterned on a substrate 5001.

[0057] The drain electrode 5004 is connected to an electrode 5008 via an interlayer-insulating film 5007. The electrode 5008 is in contact with a light-emitting layer 5010 which is in contact with an electro...

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PUM

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Abstract

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to transistors using amorphous oxides and displays utilizing the transistors. [0003] 2. Description of the Related Art [0004] Recently, technologies in which transparent amorphous oxide semiconductor films composed of indium, gallium, zinc, and oxygen are applied to channel layers of thin-film transistors (TFTs) have been developed. For example, International Publication No. WO 2005 / 088726 (Patent Document) discloses a technology for using an InGaZn system transparent amorphous oxide film as the channel layer of a TFT. [0005] This transparent amorphous oxide semiconductor film can be formed at a low temperature and is transparent to visible light. Therefore, a flexible and transparent TFT can be formed on a substrate such as a plastic sheet or film. [0006] In Nature (2004), 432, 488-492 (Non-Patent Document), it is disclosed that a transparent amorphous oxide semiconductor film has a vi...

Claims

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Application Information

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IPC IPC(8): H01L29/04
CPCH01L29/7869H01L29/78633H01L29/78693H01L27/1225G02F1/1368H10K59/123H10K59/126H10K2102/311
Inventor HAYASHI, RYOSANO, MASAFUMIABE, KATSUMIKUMOMI, HIDEYANISHI, KOJIRO
Owner CANON KK
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