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522131results about "Semiconductor devices" patented technology
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Amorphous oxide and field effect transistor
ActiveUS20060108636A1Reduced electron mobilityLow conductivitySolid-state devicesSemiconductor/solid-state device manufacturingField-effect transistorActive layer
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Owner:CANON KK +2
Electric elements and circuits utilizing amorphous oxides
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018 / cm3 is used for the N-type region.
Owner:CANON KK +2
Oxide semiconductor thin film transistor and method of manufacturing the same
InactiveUS20070052025A1Improve reliabilityUnstability of may lessenSolid-state devicesSemiconductor/solid-state device manufacturingEngineeringSemiconductor
Provided is a thin film transistor comprising a channel layer comprised of an oxide semiconductor containing In, M, Zn, and O, M including at least one selected from the group consisting of Ga, Al, and Fe. The channel layer is covered with a protective film.
Owner:CANON KK
Thin-film device and method of fabricating the same
ActiveUS20080038882A1Low densityGood reproducibilitySemiconductor/solid-state device manufacturingSemiconductor devicesOxide semiconductorOxide
A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
Owner:NEC LCD TECH CORP
Field effect transistor
ActiveUS20060113539A1Inhibit currentMaintain good propertiesSolid-state devicesSemiconductor/solid-state device manufacturingField-effect transistorElectron
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18 / cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
Owner:CANON KK +2
Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.
Owner:CANON KK
Display
An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
Owner:CANON KK +2
Semiconductor apparatus and method of manufacturing the same
InactiveUS20080073653A1Solid-state devicesSemiconductor/solid-state device manufacturingEngineeringSemiconductor
It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
Owner:CANON KK
Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
ActiveUS7402506B2NanoinformaticsSemiconductor/solid-state device manufacturingSemiconductor materialsZinc
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
Owner:EASTMAN KODAK CO
Field-effect transistor and method for manufacturing the same
InactiveUS7411209B2Solid-state devicesSemiconductor/solid-state device manufacturingHydrogenField-effect transistor
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
Owner:CANON KK
METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM
InactiveUS20070172591A1Liquid surface applicatorsChemical vapor deposition coatingChemical vapor depositionMetal
Provided is a method of fabricating a low temperature ZnO polycrystalline film and a thin film transistor (TFT) adopting the low temperature ZnO polycrystalline film. The method includes growing ZnO on a substrate at a first temperature for a first time using Metal Organic Chemical Vapor Deposition (MOCVD) to form a ZnO buffer layer, and heating the substrate at a temperature lower than the first temperature to grow ZnO on the ZnO buffer layer for a second time longer than the first time so as to form a ZnO film.
Owner:SAMSUNG ELECTRONICS CO LTD +1
Organic electroluminescent display device and manufacturing method thereof
ActiveUS20070046191A1Maintain its level of performanceEnhance layeringDischarge tube luminescnet screensElectroluminescent light sourcesOligomerEngineering
The present invention provides an organic EL display device having a planarizing layer, which is prevented from being distorted. The above organic EL display device has a planarizing layer, which retains 5% or less the oligomer used to form this layer.
Owner:CANON KK
Thin film transistor, method of manufacturing the same, and flat panel display having the same
ActiveUS20080258141A1Improve stabilityUniform characteristicsSolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceEngineering
A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.
Owner:SAMSUNG ELECTRONICS CO LTD
Thin film transistor having an etching protection film and manufacturing method thereof
InactiveUS7385224B2Improve machining accuracySolid-state devicesSemiconductor/solid-state device manufacturingSemiconductorSemiconductor thin films
A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
Owner:CASIO COMPUTER CO LTD
Electronic device, organic electroluminescence device, and organic thin film semiconductor device
InactiveUS20080106191A1Easy to manufactureImprove reliabilityCellsDischarge tube luminescnet screensSolid state electrolyteElectrolysis
An electronic device includes a substrate, a functional element formed on the substrate, an electrolytic element provided on at least one of a side of the substrate on which the functional element is formed and a side of the substrate opposite to the side on which the functional element is formed, configured including a solid-state electrolyte layer and a pair of electrodes for holding the solid-state electrolyte layer in between, and capable of applying electrolysis to water, and a sealing member for sealing the functional element and the electrolytic element.
Owner:SEIKO EPSON CORP
Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
ActiveUS20080258140A1Stable contact characteristicHigh carrier mobilitySemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringIon implantation
Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
InactiveUS20070187678A1Improve heat resistanceImprove propertiesSemiconductor/solid-state device manufacturingSemiconductor devicesZincActive layer
A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
Owner:KOICHI IND PROMOTION CENT +1
Semiconductor device, electronic device, and method of manufacturing semiconductor device
InactiveUS20060170111A1Stable formationImprove performanceSemiconductor/solid-state device detailsSolid-state devicesDevice materialShortest distance
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
Owner:SEMICON ENERGY LAB CO LTD
Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
ActiveUS20090152506A1Orientation can be controlledLow costFrom gel stateFrom solid stateOrganic solventDevice material
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.
Owner:FUJIFILM CORP
Semiconductor device, electronic device, and method of manufacturing semiconductor device
InactiveUS20060169973A1Stable formationImprove performanceSolid-state devicesSemiconductor/solid-state device manufacturingDevice materialDisplay device
To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Owner:SEMICON ENERGY LAB CO LTD
Method of fabricating oxide semiconductor device
InactiveUS20070054507A1Efficient solutionReduce conductivitySemiconductor/solid-state device manufacturingSemiconductor devicesSemiconductorMaterials science
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
Owner:CANON KK
Method of dry etching oxide semiconductor film
InactiveUS20080038929A1Improve processing accuracyIncrease etch rateDecorative surface effectsSemiconductor/solid-state device manufacturingSemiconductorDry etching
Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
Owner:CANON KK
Thin film transistor and organic light-emitting display device having the thin film transistor
InactiveUS20080224133A1Solid-state devicesSemiconductor/solid-state device manufacturingNitrogenDisplay device
Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source / drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.
Owner:SAMSUNG MOBILE DISPLAY CO LTD
High-electron mobility transistor with zinc oxide
InactiveUS7105868B2Increase heightHigh electron mobilitySemiconductor/solid-state device manufacturingSemiconductor devicesSchottky barrierField-effect transistor
A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride / aluminum gallium nitride (AlN / AlGaN) or magnesium zinc oxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a silicon metal oxide semiconductor field effect transistor (Si-MOS-type FET), resulting in the formation of an inversion layer.
Owner:NAUSE CATHERINE D
ZnO thin film transistor and method of forming the same
InactiveUS20070272922A1Semiconductor/solid-state device manufacturingSemiconductor devicesGate insulatorEngineering
A zinc oxide (ZnO) thin film transistor (TFT) and method of forming the same are provided. The ZnO may include a ZnO semiconductor channel, a conductive ZnO gate forming an electric field around the ZnO semiconductor channel, an ZnO gate insulator interposed between the conductive ZnO gate and the ZnO semiconductor channel and an insulating ZnO passivation layer on the ZnO semiconductor channel, the conductive ZnO gate and the ZnO gate insulator to protect the ZnO semiconductor channel, the conductive ZnO gate, and the ZnO gate insulator. A thin film transistor (TFT) may be formed by forming a semiconductor channel, forming a conductive gate having an electric field around the semiconductor channel, forming a gate insulator between the conductive gate and the semiconductor channel, and forming an insulating passivation layer on the semiconductor channel, the conductive gate and the gate insulator.
Owner:SAMSUNG ELECTRONICS CO LTD
Oxynitride semiconductor
ActiveUS20100109002A1High mobility and environmental stabilityImprove mobilitySemiconductor devicesNitrogen oxideOxygen
Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and at least one element selected from the group consisting of In, Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N / (N+O), of 7 atomic percent or more to 80 atomic percent or less.
Owner:CANON KK
Structure with transistor
ActiveUS20080258139A1Improve mobilityOn/off ratio highSemiconductor/solid-state device manufacturingSemiconductor devicesLiquid-crystal displayDisplay device
A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.
Owner:TOPPAN PRINTING CO LTD
Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
ActiveUS20100092800A1Low costHigh crystallinityPolycrystalline material growthVacuum evaporation coatingNitrideSemiconductor
A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.
Owner:CANON KK
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
ActiveUS20060284172A1Etch resistance of resist is lowPromote meltingSolid-state devicesSemiconductor/solid-state device manufacturingZincSemiconductor
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.
Owner:SAMSUNG DISPLAY CO LTD
Dry etching method for oxide semiconductor film
InactiveUS20070287296A1Improve processing accuracyIncrease etch rateDecorative surface effectsSemiconductor/solid-state device manufacturingDry etchingSemiconductor
Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.
Owner:CANON KK
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