A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxidesemiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxidesemiconductor layer having a conductive impurity in the oxidesemiconductor layer. A low resistancemetal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.
A semiconductor device includes an oxidesemiconductor thin film layer primarily including zincoxide having at least one orientation other than (002) orientation. The zincoxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
A zincoxide (ZnO) field effecttransistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride / aluminum gallium nitride (AlN / AlGaN) or magnesiumzincoxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a siliconmetaloxidesemiconductorfield effecttransistor (Si-MOS-type FET), resulting in the formation of an inversion layer.
A zincoxide (ZnO) thin film transistor (TFT) and method of forming the same are provided. The ZnO may include a ZnO semiconductor channel, a conductive ZnO gate forming an electric field around the ZnO semiconductor channel, an ZnO gate insulator interposed between the conductive ZnO gate and the ZnO semiconductor channel and an insulating ZnO passivation layer on the ZnO semiconductor channel, the conductive ZnO gate and the ZnO gate insulator to protect the ZnO semiconductor channel, the conductive ZnO gate, and the ZnO gate insulator. A thin film transistor (TFT) may be formed by forming a semiconductor channel, forming a conductive gate having an electric field around the semiconductor channel, forming a gate insulator between the conductive gate and the semiconductor channel, and forming an insulating passivation layer on the semiconductor channel, the conductive gate and the gate insulator.