65results about How to "High electron mobility" patented technology

The invention relates to a high-strength supported noble metal catalyst as well as a preparation method and application thereof. An additive, an adhesive and an extrusion aid are introduced into a carrier to modify the structure of the carrier so as to improve the strength of the carrier, and meanwhile, acidizing treatment is performed to enhance the acid resistance of the carrier in an HCl atmosphere; in addition, the water-resistant strength of the catalyst in water vapor is enhanced by adopting a hydrothermal method to impregnate and load noble metal. Particularly, the catalyst can be used for a reaction for preparing chlorine by catalytic oxidation of HCl and has relatively high catalytic activity.

The invention discloses a self-powered sensor for detecting sugarcane smut pathogenic bacteria and a preparation method thereof, the self-powered biosensor comprises an anode, a cathode and an electrolyte, the anode is an Au / N-GDY / GOD / BSA biological anode, the cathode is an Au / N-GDY / DNA chain biosensor, and the electrolyte comprises glucose, [Ru (NH3) 6] 3 + and a PBS buffer solution. The sensor provided by the invention is used for portable detection of pathogenic bacteria of sugarcane smut, and quantitative analysis of a target analyte is realized through change of power output of the enzyme biological fuel cell. The target object can be simply, quickly, sensitively and efficiently detected.

The invention provides nitrogen-doped carbon-coated lithium manganese iron phosphate as well as a preparation method and application thereof, and relates to the technical field of lithium ion batteries. Specifically, a solution containing a phosphorus source, a lithium source, an iron source and a manganese source is mixed and ground to obtain a first material; a dispersing agent is added into the first material, mixing and grinding are conducted, a second material is obtained, and the dispersing agent comprises at least one of chitosan, polyvinylpyrrolidone or polyethyleneimine; and sequentially carrying out spray drying, sintering and crushing on the second material to obtain the lithium iron manganese phosphate positive electrode material. By adopting a specific type of organic dispersing agent and introducing through a specific technological process, grain agglomeration can be effectively avoided, and the conductivity and carbon coating stability of the lithium manganese iron phosphate material are improved, so that the electrochemical performance of the positive electrode material is effectively improved; meanwhile, the preparation method is simple and easy to implement, and has a prospect of batch application.

The invention discloses a high-efficiency ternary perovskite solar cell and a preparation method thereof, and the cell sequentially comprises an ITO conductive glass layer, a (4-(3, 6-dimethyl-9H-carbazole-9-yl) butyl) phosphonic acid hole transport layer (MeO-4PACz), a ternary perovskite layer formed by mixing an ionic liquid BzMIMBr and a perovskite layer Cs0.05 (FA0.95 MA0.05) 0.95 Pb (I0.95 Br0.05) 3, a C60 electron transport layer, 2, 9-dimethyl-4, 4 '-diazole-4, 4'-diazole-4, 4 '-diazole-4, 4'-diazole-4, 4 '-diazole-4, 4'-diazole-4 '-diazole-4, 4'-diazole-4 '-diazole-4'-diazole-4 ' the hole barrier layer is a 1, 7-biphenyl-1, 10-phenanthroline hole barrier layer (BCP); and the metal Al electrode layer is formed on the hole barrier layer. According to the scheme, the conjugated ionic liquid is introduced into the perovskite active layer, so that multi-point passivation of defects is realized, the external quantum efficiency is improved, the film form is improved, the crystallinity is expanded, charge transfer is balanced, the photoelectric conversion efficiency is enhanced, the stability is improved, and the hysteresis effect of a device is effectively inhibited.

The invention discloses preparation and application of a yolk-shell structure body phase hydrodesulfurization catalyst based on hydrogen overflow, and the preparation method comprises the following steps: (1) adding nickel nitrate hexahydrate into an aqueous solution of glycerol, isopropanol and deionized water, and carrying out solvothermal reaction on a green solution to obtain a solid spherical nickel composite precursor; (2) mixing the nickel composite precursor with an ethanol solution of thioacetamide, and adding an ammonium heptamolybdate aqueous solution to obtain a turbid liquid; and performing solvothermal reaction on the turbid liquid to obtain the yolk-shell structure catalyst. The yolk-shell structure catalyst with rich NiMoS phases is controllably derived by adopting a limited range vulcanization coupling in-situ intercalation strategy. Under the action of confinement vulcanization, organic molecules are intercalated in situ and assist in constructing stable 1T-MoS2 with short plate length and low stacking, so that full exposure of rim sites is promoted. According to the catalyst, an inner core NiS2 is used as an auxiliary active phase to trigger a hydrogen overflow effect, and cooperation of double active phases is promoted through an egg yolk-shell structure, so that ultra-deep desulfurization of an oil product is realized.

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The present invention belongs to the technical field of gas sensors, and specifically relates to an isopropyl alcohol gas sensitive material and a preparation method and application thereof. The isopropyl alcohol gas sensitive material comprises a nanorod-shaped α-Fe 2 O 3 , BiFeO nanoparticles 3 The thin film rGO is reduced to thin film rGO by hydrazine hydrate reduction method, and the large specific surface area and intrinsic electron mobility of rGO are used to improve the α-Fe 2 O 3 Gas sensing performance for isopropyl alcohol. Compared with single α-Fe 2 O 3 Gas sensor, rGO(1.0wt%)‑6α‑Fe 2 O 3 / BiFeO 3 The gas sensitive material responds much better to isopropanol gas than to α-Fe under the same conditions. 2 O 3 and α‑Fe 2 O 3 / BiFeO 3 The composite material has a fast response-recovery capability, excellent stability and good selectivity. The gas-sensitive material is not only simple to prepare and low in cost, but also makes full use of BiFeO 3 and α‑Fe 2 O 3 The advantages of the sensor have greatly improved the overall performance of the sensor.

The present invention discloses a compound containing a triazine structure and its application in an organic electroluminescent device, belonging to the technical field of semiconductor materials. The structure of the compound of the present invention is shown in the general formula (1), and the compound has the characteristics of high glass transition temperature and molecular thermal stability, good electron mobility and suitable HOMO / LUMO energy level. When the compound of the present invention is used as a material for an organic electroluminescent device, the driving voltage, device efficiency and device life of the device are significantly improved.

The present invention relates to the research field of metal oxide semiconductor materials, specifically to a metal oxide and a preparation method thereof, and a gas sensor. A preparation method of a metal oxide comprises the following steps: reacting a pretreated metal oxide with a surfactant, and placing the metal oxide in a dielectric barrier discharge device close to a negative electrode and not in a discharge region after the reaction is completed. And introducing methane gas into the dielectric barrier discharge device. The metal oxide material is bombarded with methane plasma prepared by the dielectric barrier discharge device, so that the metal oxide powder has a loose and porous structure on the basis of the original structure. The increase in the pore structure can increase the contact area between the metal oxide and the gas, and at the same time, the carbon atoms in the methane plasma are doped on the surface of the metal oxide, which can reduce the reaction activation energy of the metal oxide, enhance the metal oxide's adsorption capacity for gas and electron mobility, and improve the prepared metal oxide's gas sensitivity to gas.

The invention provides a semiconductor structure and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the technical problem of relatively high threshold voltage. The semiconductor structure comprises a semiconductor substrate with an NMOS (N-channel Metal Oxide Semiconductor) region and a PMOS (P-channel Metal Oxide Semiconductor) region, a first gate stack structure positioned on the semiconductor substrate in the NMOS region, and a second gate stack structure positioned on the semiconductor substrate in the PMOS region, and both the first gate stack structure and the second gate stack structure comprise high-K dielectric layers; the first isolation layer is located on the side wall of the first gate stack structure to cover the corresponding high-K dielectric layer, protect the oxygen vacancy and reduce the threshold voltage of the first gate stack structure; the second isolation layer is located on the side wall of the second gate stack structure, the second isolation layer at least comprises an oxide isolation layer, the oxide isolation layer at least covers at least part of the side face of the high-K dielectric layer in the second gate stack structure, the oxygen vacancy of the high-K dielectric layer in contact with the oxide isolation layer is repaired, and the threshold voltage of the second gate stack structure is reduced.

The invention provides a nitrogen-containing heterocyclic compound and an organic electroluminescent device thereof, and particularly relates to the technical field of organic photoelectric materials. When the nitrogen-containing heterocyclic compound provided by the invention is used as an electron transport layer material, the nitrogen-containing heterocyclic compound has relatively high electron mobility, and the combination efficiency of holes and electrons can be improved; when the organic electroluminescent material is used as a main body material, the organic electroluminescent material has a high triplet state energy level, so that the organic electroluminescent device has high luminous efficiency. The nitrogenous heterocyclic compound and the organic electroluminescent device thereof have good application effect and industrialization prospect.

The invention discloses a synthetic method and application of a pyrrolo-quinoxaline-quinazoline derivative, and belongs to the technical field of biological medicines and organic semiconductor materials. The derivative shows abundant chemical diversity and controllable physical, chemical and biological activities by adjusting substituent groups and heteroatoms, and meets the requirements of multiple fields; the pyrrolo-quinoxaline-quinazoline derivative has excellent fluorescence performance and high electron mobility, can improve the response speed and efficiency of a device, is helpful for improving the photoelectric conversion efficiency of a photoelectric device, is efficient and environment-friendly in synthesis method, extremely small in catalyst dosage, mild in reaction condition, short in reaction time and high in yield, and is suitable for industrial production. The production cost is remarkably reduced, the product purity is improved, the derivative has excellent fluorescence performance and high electron mobility, great potential is shown in the field of photoelectric conversion, and the device efficiency can be improved. Meanwhile, due to the unique biological activity, the polypeptide becomes a potential drug skeleton, and a new thought is provided for research and development of new drugs by designing adjustable and controllable target combination.

The invention discloses a floating interactive intelligent display chip based on dynamic distance sensing and a preparation process, and relates to the field of integrated chip preparation, the floating interactive intelligent display chip comprises a substrate layer, a buffer layer, an intrinsic layer, a multi-quantum well layer, a barrier layer, a source electrode, a grid electrode, a p-GaN layer, an anode and a drain electrode, the buffer layer, the intrinsic layer, the multi-quantum well layer and the barrier layer are sequentially arranged on the substrate layer, and the source electrode, the grid electrode, the p-GaN layer, the anode and the drain electrode are sequentially arranged on the substrate layer. The source electrode is arranged on one side of the upper surface of the barrier layer, the grid electrode is arranged in the middle of the upper surface of the barrier layer, the p-GaN layer is arranged on the other side of the upper surface of the barrier layer, and the anode and the drain electrode are sequentially arranged above the p-GaN layer. An InGaN / GaN multi-quantum well structure is embedded into a p-GaN HEMT epitaxial layer structure to form a light-emitting HEMT structure, and a driving transistor, a light source and a photoelectric detector are subjected to monolithic integration, so that a floating interactive intelligent display chip with an epitaxial integrated structural characteristic is realized.

The present application relates to the field of energy storage technology, and in particular to energy storage cells and preparation methods thereof, wherein the preparation method of the energy storage cell includes preparing a positive electrode material, and the steps of preparing the positive electrode material include: preparing a mixed solution containing lithium manganate, bismuth salt and molybdate acid salt, wherein the molybdate acid salt includes at least one of molybdate, tungstate and vanadate, wherein the molar amount of bismuth ions in the mixed solution is n1, the total molar amount of molybdate ions, tungstate ions and vanadate ions is n2, and the molar amount of lithium manganate is n3, n1:n2:n3=(1.05~2.2):1:(100~200); the mixed solution is subjected to solvent thermal reaction treatment to obtain a positive electrode material. The technical solution of the present application uses molybdate acid salt and bismuth salt to modify the lithium manganate positive electrode material, so that the high temperature adaptability and cycle performance of the positive electrode material are improved.

The invention relates to the technical field of organic synthesis, in particular to a small-molecule electron transport material containing a naphthalimide terminal group and preparation and application thereof.4-bromo-1, 8-naphthalic anhydride is used as a raw material, brominated naphthalimide terminal groups are obtained through imidization, then different conjugated fused ring core units are used as raw materials, and the small-molecule electron transport material containing the naphthalimide terminal group is prepared through a one-step method. And coupling the conjugated fused ring core unit with naphthalimide through a coupling reaction to obtain the small-molecule electron transport material containing the naphthalimide terminal group. By virtue of high electron affinity, strong electron withdrawing property, good thermal stability and morphological stability and relatively strong designability of structure and function of naphthalimide, the micromolecule electron transport material shows excellent electron mobility, tight intermolecular accumulation and good three-dimensional charge transport characteristic; surface / interface defects can be effectively passivated, trap-assisted recombination is inhibited, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are synergistically improved.

The present invention relates to the technical field of saturable absorbers, and in particular to a saturable absorber based on tin oxide nanoparticles, a preparation method thereof, and a ring cavity fiber laser. The ring cavity fiber laser is composed of a pump source and a ring laser resonant cavity. The ring laser resonant cavity is composed of a wavelength division multiplexer, an erbium-doped optical fiber, a polarization light isolator, a saturable absorber, a polarization controller, and an optical splitter connected in sequence. The pump source is connected to the input end of the wavelength division multiplexer. The saturable absorber is a saturable absorber based on a mixture of tin oxide nanoparticles and a film-forming agent, or a saturable absorber based on tin oxide nanoparticles deposited on the surface of a tapered optical fiber, a D-type optical fiber, or a cladding-corroded optical fiber, or a saturable absorber based on tin oxide nanoparticles filled in the air hole cladding of a photonic crystal optical fiber. The present invention can provide a new solution for the development of ultrashort pulse fiber lasers.

The invention relates to the field of organic electroluminescent devices, and discloses an organic compound and application thereof and an organic electroluminescent device.The organic compound has a structure shown in A-L-B, A is a group shown in the formula (I-1), B is a group shown in the formula (I-2), and L is an integer greater than or equal to 1. L does not exist or L is at least one of linking groups formed by leaving any two H capable of leaving from a C3-30 aromatic compound containing or not containing A-type heteroatoms, and the linking groups optionally contain at least one substituent group selected from the combination A. When the organic compound is applied to the organic electroluminescent device, the driving voltage can be reduced, the luminous efficiency can be improved, and the service life can be prolonged. # imgabs0 #

The invention relates to the technical field of organic electroluminescent devices, and discloses a nitrogen heterocyclic organic compound and application thereof, an organic electroluminescent device and a perovskite solar cell. The organic compound has a structure as shown in a formula (I). When the organic compound is applied to the organic electroluminescent device, the performance of the device can be improved, the driving voltage is reduced, the luminous efficiency is improved, and the service life is prolonged. # imgabs0 #

The invention provides a silicon carbide tray for rapid heat treatment and a rapid heat treatment method.The silicon carbide tray for rapid heat treatment comprises a silicon carbide base disc, and the silicon carbide base disc is provided with at least three sets of cooling table limiting openings, wafer limiting columns and through holes; the cooling table limiting opening, the wafer limiting column and the through hole are respectively arranged on the silicon carbide basal disc at equal intervals, the distance between the cooling table limiting opening and the center of the silicon carbide basal disc is a, the distance between the wafer limiting column and the center of the silicon carbide basal disc is b, and the distances between the through hole and the center of the silicon carbide basal disc are c and egt; bgt; c. According to the invention, silicon carbide is made into a tray for rapid heat treatment with a special structure, so that the wafer heating uniformity can be improved, the edge effect and the pattern loading effect in the wafer heating process are reduced, and an oxidation film with higher quality is obtained.

This invention discloses a spiro compound and its applications, belonging to the field of display technology. The chemical structural formula of the compound is as follows: ; wherein, Ar1 to Ar4 are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; Ar5, Ar6, and R are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; at least one of Z1 to Z3 is N, and the rest are CH; L is one of the following groups: , , ; R1 to R 10 Each of these compounds is independently one of hydrogen, halogen, cyano, nitro, C1-C8 alkyl, C1-C12 alkoxy, substituted or unsubstituted C6-C30 aryl, or substituted or unsubstituted C3-C30 heteroaryl. This compound exhibits excellent electron transport properties, which is beneficial for improving the voltage, efficiency, and lifetime of devices.

The invention discloses a nano-diamond polishing solution which is prepared from the following raw materials in parts by weight: 5-10 parts of modified diamond micro powder, 80-100 parts of water, 0.5-2 parts of a photocatalyst, 0.5-1 part of an oxidizing agent and 0.5-1 part of a dispersing agent, and the pH of the polishing solution is adjusted to be 8 by using a pH regulator, wherein the modified diamond micro-powder is diamond micro-powder treated by a silane coupling agent, and the silane coupling agent is tetraethoxysilane. The modified diamond micro-powder adopted by the invention is the diamond micro-powder treated by a silane coupling agent, and the silane coupling agent is tetraethoxysilane, so that the nano-diamond micro-powder is subjected to modification treatment by adopting tetraethoxysilane; the surface of the nano-diamond micro powder is covered with a layer of continuous and compact nano amorphous silicon dioxide film containing active oxygen groups, so that aggregation of nano-diamond particles is prevented, the dispersity and suspension stability of the nano-diamond particles are improved, the overall performance of the polishing solution is improved, and the surface quality of a workpiece is guaranteed.

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

The present invention provides an organic compound and an application thereof. The organic compound of the present invention belongs to a material with a specific large conjugated fused ring structure, has suitable HOMO and LUMO values, and effectively improves the ability of electron transmission; has high electron mobility, excellent thermal stability and film stability, is conducive to improving luminous efficiency, reducing injection barriers, and reducing device operating voltage; and can improve electron transmission rate, balance electron and hole injection, and improve device luminous efficiency and life; an organic electroluminescent device using the organic compound of the present invention has a lower driving voltage, a higher current efficiency and a longer life.

The bipolar plate comprises a conductive substrate, a first conductive layer and a second conductive layer are respectively arranged on the front surface and the back surface of the conductive substrate, and the first conductive layer is formed by welding a conductive network on the front surface of the conductive substrate and / or spraying or plating conductive particles on the front surface of the conductive substrate; the second conductive layer is formed by welding a conductive network on the reverse side of the conductive substrate and / or spraying or plating conductive particles on the reverse side of the conductive substrate; a positive active material layer is loaded on the surface of the first conductive layer, a negative active material layer is loaded on the surface of the second conductive layer, and the first conductive layer and the second conductive layer are rolled to form a whole. The arrangement of the first conductive layer and the second conductive layer provides a good adhesion basis for the positive active material layer and the negative active material layer, the roughness and the specific surface area of the surface of the bipolar plate are increased by the conductive network and the conductive particles, so that the active material can be better adhered to the bipolar plate, and the active material can be better adhered to the bipolar plate through rolling treatment. The active material can be more tightly combined with the conductive layer to form a whole, so that the binding force between the bipolar plate and the electrode material is enhanced, the high-power charge-discharge performance of the battery is improved, the stability of the battery structure is ensured, and the performance and the cycle life of the battery are further improved.

The invention discloses a graphene composite metal wire electrode and a preparation method and application thereof, and belongs to the technical field of electrode materials. The graphene composite metal wire electrode provided by the invention comprises a metal wire, a gold layer and a vertical graphene layer, at least one part of the gold layer is coated on the surface of the metal wire; the surface of the gold layer is coated with at least one part of the vertical graphene layer, and the two-dimensional plane direction of the vertical graphene layer is perpendicular to the gold layer. Through cooperation of the metal wire, the gold layer and the vertical graphene layer, the obtained graphene composite metal wire electrode has low low-frequency impedance, high electron transfer rate and good sensing performance, and particularly, the electrochemical performance of the electrode is effectively enhanced by adopting the vertical graphene layer for modification; the graphene composite metal wire electrode is especially suitable for dopamine detection, can detect dopamine at a low peak potential, and has the characteristics of high sensitivity, good stability and strong anti-interference capability.

The invention relates to a breakdown-resistant and aging-resistant power cable. A power cable has high anti-breakdown and anti-aging requirements, however, cable materials used at present, such as polyethylene, are poor in anti-aging capability. In order to solve the problem, the breakdown-resistant and aging-resistant power cable is invented, the breakdown-resistant and aging-resistant power cable is sequentially composed of a conductor, a conductor shielding layer, an insulating layer, a wrapping layer and a protective layer from inside to outside, and the conductor shielding layer is a composite shielding material composed of organic silicon, graphene and nano molybdenum dioxide. The organic silicon in the conductor shielding layer has good heat resistance and aging resistance; the graphene has good electric conduction and heat conduction performance, can shield electromagnetic waves, and can conduct heat out to reduce the temperature; the nano molybdenum dioxide can react with peroxide at high temperature, so that the degradation effect of the organic silicon resin is delayed, and the aging resistance of the cable can be effectively improved by combining the nano molybdenum dioxide, the peroxide and the organic silicon resin. The breakdown-resistant and aging-resistant power cable can be used in the fields of high-voltage power cables and the like.

The invention relates to the technical field of conductive paste, and provides intelligent temperature control graphene-based conductive paste and a preparation method and application thereof. According to the invention, the thermal resistance agent is added into the conductive slurry, so that the effect of automatic temperature control can be achieved, the electrically-induced heating flexible device is always kept within a certain temperature range, and the safety problem of the electrically-induced heating flexible device is solved. The intelligent temperature-control graphene-based conductive paste provided by the invention is good in safety, a printed matter printed by using the intelligent temperature-control graphene-based conductive paste cannot generate an overheating phenomenon, the dispersion stability is good, the off-network property is good during printing, large-size and large-scale integrated printing can be realized, and an obtained printed coating has good stretchability, electric conductivity and heat conductivity; the method has a wide application prospect in the field of electrically-induced heating flexible devices.

The invention relates to the technical field of display, in particular to an organic electroluminescent compound and application thereof. The organic electroluminescent compound provided by the invention has a structure shown as follows: # imgabs0 #, so that an organic electroluminescent device containing the organic electroluminescent compound has relatively low driving voltage, relatively high luminous efficiency and relatively long service life.

This application relates to the field of in-memory computing memory technology, and more particularly to a three-dimensional ferroelectric memory with an IGZO channel and its fabrication method. The three-dimensional ferroelectric memory with an IGZO channel includes: a bottom global gate line; a center select gate extending vertically relative to the bottom global gate line; a semiconductor stack structure including a gate metal layer, a ferroelectric layer, a gate oxide layer, and an IGZO channel sequentially surrounding the center select gate; a drain and a source extending horizontally relative to the center select gate into the semiconductor stack structure and contacting the ferroelectric layer; and multiple pairs of drains and sources spaced apart along the extension direction of the center select gate to form multiple ferroelectric memory transistor cells. The three-dimensional ferroelectric memory with an IGZO channel of this application improves the durability and reliability of non-volatile memory devices.

The invention relates to the technical field of organic electroluminescent devices, and discloses a nitrogen heterocyclic organic compound and application thereof, an organic electroluminescent device and a perovskite solar cell. The organic compound has a structure as shown in a formula (I). When the organic compound is applied to the organic electroluminescent device, the performance of the device can be improved, the driving voltage is reduced, the luminous efficiency is improved, and the service life is prolonged. # imgabs0 #