17results about How to "High electron mobility" patented technology

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention discloses a floating interactive intelligent display chip based on dynamic distance sensing and a preparation process, and relates to the field of integrated chip preparation, the floating interactive intelligent display chip comprises a substrate layer, a buffer layer, an intrinsic layer, a multi-quantum well layer, a barrier layer, a source electrode, a grid electrode, a p-GaN layer, an anode and a drain electrode, the buffer layer, the intrinsic layer, the multi-quantum well layer and the barrier layer are sequentially arranged on the substrate layer, and the source electrode, the grid electrode, the p-GaN layer, the anode and the drain electrode are sequentially arranged on the substrate layer. The source electrode is arranged on one side of the upper surface of the barrier layer, the grid electrode is arranged in the middle of the upper surface of the barrier layer, the p-GaN layer is arranged on the other side of the upper surface of the barrier layer, and the anode and the drain electrode are sequentially arranged above the p-GaN layer. An InGaN / GaN multi-quantum well structure is embedded into a p-GaN HEMT epitaxial layer structure to form a light-emitting HEMT structure, and a driving transistor, a light source and a photoelectric detector are subjected to monolithic integration, so that a floating interactive intelligent display chip with an epitaxial integrated structural characteristic is realized.

The invention relates to the technical field of organic synthesis, in particular to a small-molecule electron transport material containing a naphthalimide terminal group and preparation and application thereof.4-bromo-1, 8-naphthalic anhydride is used as a raw material, brominated naphthalimide terminal groups are obtained through imidization, then different conjugated fused ring core units are used as raw materials, and the small-molecule electron transport material containing the naphthalimide terminal group is prepared through a one-step method. And coupling the conjugated fused ring core unit with naphthalimide through a coupling reaction to obtain the small-molecule electron transport material containing the naphthalimide terminal group. By virtue of high electron affinity, strong electron withdrawing property, good thermal stability and morphological stability and relatively strong designability of structure and function of naphthalimide, the micromolecule electron transport material shows excellent electron mobility, tight intermolecular accumulation and good three-dimensional charge transport characteristic; surface / interface defects can be effectively passivated, trap-assisted recombination is inhibited, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are synergistically improved.

This invention discloses a spiro compound and its applications, belonging to the field of display technology. The chemical structural formula of the compound is as follows: ; wherein, Ar1 to Ar4 are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; Ar5, Ar6, and R are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; at least one of Z1 to Z3 is N, and the rest are CH; L is one of the following groups: , , ; R1 to R 10 Each of these compounds is independently one of hydrogen, halogen, cyano, nitro, C1-C8 alkyl, C1-C12 alkoxy, substituted or unsubstituted C6-C30 aryl, or substituted or unsubstituted C3-C30 heteroaryl. This compound exhibits excellent electron transport properties, which is beneficial for improving the voltage, efficiency, and lifetime of devices.

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

The bipolar plate comprises a conductive substrate, a first conductive layer and a second conductive layer are respectively arranged on the front surface and the back surface of the conductive substrate, and the first conductive layer is formed by welding a conductive network on the front surface of the conductive substrate and / or spraying or plating conductive particles on the front surface of the conductive substrate; the second conductive layer is formed by welding a conductive network on the reverse side of the conductive substrate and / or spraying or plating conductive particles on the reverse side of the conductive substrate; a positive active material layer is loaded on the surface of the first conductive layer, a negative active material layer is loaded on the surface of the second conductive layer, and the first conductive layer and the second conductive layer are rolled to form a whole. The arrangement of the first conductive layer and the second conductive layer provides a good adhesion basis for the positive active material layer and the negative active material layer, the roughness and the specific surface area of the surface of the bipolar plate are increased by the conductive network and the conductive particles, so that the active material can be better adhered to the bipolar plate, and the active material can be better adhered to the bipolar plate through rolling treatment. The active material can be more tightly combined with the conductive layer to form a whole, so that the binding force between the bipolar plate and the electrode material is enhanced, the high-power charge-discharge performance of the battery is improved, the stability of the battery structure is ensured, and the performance and the cycle life of the battery are further improved.

The application discloses a high-mobility silicon carbide N-type LDMOS device with reduced on-resistance, which comprises an N-type substrate, a P-type epitaxial layer arranged on the N-type substrate, an N-type well region, a first P-type heavily doped region, a first N-type heavily doped region, a second P-type heavily doped region connected to a source, a second N-type heavily doped region connected to a drain arranged in the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region and the second P-type heavily doped region being connected, an oxide layer arranged on the surface of the second N-type heavily doped region, the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region and the P-type epitaxial layer, a polycrystalline silicon trench gate serving as a gate of the device and extending into the P-type epitaxial layer, and an N-type buried layer arranged in the P-type epitaxial layer, one end of the N-type buried layer being connected to a channel of the device and the other end being connected to the N-type well region.

This invention discloses a hydrothermal method for preparing Bi₂MoO₆ / tourmaline functional composite materials, belonging to the field of functional materials technology. The preparation method of the Bi₂MoO₆ / tourmaline functional composite material of this invention is as follows: Molybdenum source and bismuth source are added to deionized water to prepare solution A and solution B, respectively; tourmaline powder is added to deionized water to prepare suspension C; solution B is added dropwise to solution A and stirred, then suspension C is added and stirred again to obtain mixture D; sodium hydroxide solution is added dropwise to mixture D to prepare mixture E; mixture E is transferred to a hydrothermal reactor, sealed for reaction, and cooled to obtain hydrothermal product F; hydrothermal product F is separated by suction filtration and washed to obtain wet filter cake G; wet filter cake G is dried to obtain solid H; solid H is ground to obtain the final product. The Bi₂MoO₆ / tourmaline functional composite material prepared by this invention has high negative oxygen ion generation efficiency and environmental adaptability, and can still maintain high-efficiency release capacity in low humidity or light-free environments.

The application discloses a kind of heterojunction photoelectric detectors and preparation method thereof.The detector includes: substrate;Semiconductor epitaxial structure, at least including channel layer being arranged on the substrate and being located on the barrier layer of channel layer;Wherein, the thickness and component of the barrier layer are configured so that no two-dimensional electron gas is generated at the heterojunction interface between the channel layer and the barrier layer;First electrode and second electrode, set in the semiconductor epitaxial structure and electrically connected with the two-dimensional electron gas, constitute the electrical input end and output end of the heterojunction photoelectric detector.By configuring the thickness and component of the barrier layer so that no two-dimensional electron gas is generated in the channel, the damage of etching process to the channel is avoided, and the ultraviolet detector with extremely low dark current, high photocurrent density and no need to rely on etching process to deplete the channel is realized.

The invention discloses a benzo pentacyclic compound and application thereof, and belongs to the technical field of display. The chemical structural formula of the compound is shown in the specification, wherein Ar, R1 to R6 are respectively and independently hydrogen, deuterium, halogen, cyano, nitro, alkyl of C1-C18, alkoxy of C1-C12, substituted or unsubstituted aryl of C6-C30 or substituted or unsubstituted heteroaryl of C3-C30, and R1 to R6 are respectively and independently selected from hydrogen, deuterium, halogen, cyano, nitro, alkyl of C1-C18, alkoxy of C1-C12, substituted or unsubstituted aryl of C6-C30 or substituted or unsubstituted heteroaryl of C3-C30; ar1 and Ar2 are respectively and independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; each of L1 to L3 independently represents a single bond, a substituted or unsubstituted C6-C60 arylene group, or a substituted or unsubstituted C3-C30 heteroarylene group; at least one of Z1 to Z3 is N, and the balance is CH; a is O, S, Se or CR7R8. The compound has excellent electron transmission performance, and is beneficial to improving the voltage, efficiency and service life of a device.

The invention discloses a preparation method and application of an alcohol-soluble electron transport material. The alcohol-soluble electron transport material contains a plurality of phosphorus-oxygen groups and has good solubility in an alcohol solution. The material has a relatively large conjugate plane and relatively strong electron withdrawing capability, and relatively high electron mobility can be realized. In addition, the micromolecule electron transport material is easier to synthesize and purify, and is an ideal choice for preparing the electron transport layer of the multi-layer photoelectric device by an orthogonal solvent method. The alcohol-soluble electron transport material has relatively high optical transparency and good alcohol solubility, can be used for preparing a large-area film through solution processing methods such as spin coating, ink-jet printing and printing, and has relatively high potential when being used as an electron transport layer in photoelectric devices such as a quantum dot light-emitting diode and an organic light-emitting diode.

The application relates to an insulated gate high electron mobility transistor and a preparation method thereof, and the preparation method comprises the following steps: 1, epitaxial material growth; 2, vertical structure realization; 3, drain electrode manufacturing; 4, source electrode manufacturing; 5, ohmic metal annealing; 6, dielectric layer deposition; 7, gate electrode manufacturing; and 8, manufacturing of an interconnection lead. The application can solve the problems that the threshold voltage of a conventional GaN-based high electron mobility transistor device is less than 0 and the withstand voltage capacity is poor.

This invention relates to the field of organic electroluminescent device technology, and discloses a nitrogen heterocyclic organic compound and its application, as well as an organic electroluminescent device. The compound has a structure shown in A-L-B; A is an unsubstituted group or a group substituted by at least one group in combination A, as shown in formula (I-1); the combination A contains C. 1‑20 Alkyl, C 1‑20 Alkoxy, phenyl, diphenyl, naphthyl, anthraceneyl, phenanthrene. When the nitrogen heterocyclic organic compounds provided by this invention are used in organic light-emitting devices, the organic light-emitting devices containing these nitrogen heterocyclic organic compounds have the advantages of low driving voltage, high luminous efficiency, and long service life.

The invention relates to the technical field of semiconductor material preparation, in particular to an organic compound containing a benzofuro pyrimidine group and application thereof. According to the invention, a novel benzofuranopyrimidine mother nucleus structure is introduced, and a benzofuranopyrimidine mother nucleus group and a polypyridine group are specifically linked through a bridging group and a linking site thereof, so that the compound has good electron mobility and stability; the compound has good electron tolerance and triplet state exciton inhibition capability, and can effectively reduce the driving voltage of the device, improve the efficiency of the device and prolong the service life of the device when being applied to the organic electroluminescent device as an electron transport material.

The application relates to the technical field of organic electroluminescence, in particular to a novel nitrogen-containing heterocyclic compound, an organic element material, an organic electroluminescence element and a display or lighting device. A novel nitrogen-containing heterocyclic compound, the structure of the nitrogen-containing heterocyclic compound is shown in the following formula 1: The novel nitrogen-containing heterocyclic compound provided by the application has lower driving voltage and longer service life, and is suitable for preparing high-performance organic electroluminescence elements.

This invention discloses a high-performance inverted perovskite solar cell and its fabrication method. The solar cell sequentially comprises an ITO conductive glass layer, a hole transport layer PTAA, and a MAPbI perovskite layer modified with 3,6-dibromocarbazole. 2.91 Br 0.09 Electron transport layer OAmI, Electron transport layer PC 61 The perovskite active layer consists of a BM (bulk barrier), a hole blocking layer (BCP), and a metal electrode layer (Ag). This approach enhances the carrier transport capability of the perovskite layer by introducing conjugated carbazole molecules into the active layer. This improves the energy level matching between the perovskite and carrier transport layers, increases photocurrent, improves film morphology, balances charge transport, and achieves enhanced photoelectric conversion efficiency, improved stability, and effective suppression of device hysteresis.

This application belongs to the field of organic electroluminescence technology, and relates to an organic compound and an organic electroluminescent device and electronic device using the same. The organic compound has a structure as shown in Formula 1. Using the organic compound in an organic electroluminescent device can significantly improve the performance of the organic electroluminescent device.