51results about How to "High electron mobility" patented technology

The invention discloses a self-powered sensor for detecting sugarcane smut pathogenic bacteria and a preparation method thereof, the self-powered biosensor comprises an anode, a cathode and an electrolyte, the anode is an Au / N-GDY / GOD / BSA biological anode, the cathode is an Au / N-GDY / DNA chain biosensor, and the electrolyte comprises glucose, [Ru (NH3) 6] 3 + and a PBS buffer solution. The sensor provided by the invention is used for portable detection of pathogenic bacteria of sugarcane smut, and quantitative analysis of a target analyte is realized through change of power output of the enzyme biological fuel cell. The target object can be simply, quickly, sensitively and efficiently detected.

The invention provides nitrogen-doped carbon-coated lithium manganese iron phosphate as well as a preparation method and application thereof, and relates to the technical field of lithium ion batteries. Specifically, a solution containing a phosphorus source, a lithium source, an iron source and a manganese source is mixed and ground to obtain a first material; a dispersing agent is added into the first material, mixing and grinding are conducted, a second material is obtained, and the dispersing agent comprises at least one of chitosan, polyvinylpyrrolidone or polyethyleneimine; and sequentially carrying out spray drying, sintering and crushing on the second material to obtain the lithium iron manganese phosphate positive electrode material. By adopting a specific type of organic dispersing agent and introducing through a specific technological process, grain agglomeration can be effectively avoided, and the conductivity and carbon coating stability of the lithium manganese iron phosphate material are improved, so that the electrochemical performance of the positive electrode material is effectively improved; meanwhile, the preparation method is simple and easy to implement, and has a prospect of batch application.

The invention discloses preparation and application of a yolk-shell structure body phase hydrodesulfurization catalyst based on hydrogen overflow, and the preparation method comprises the following steps: (1) adding nickel nitrate hexahydrate into an aqueous solution of glycerol, isopropanol and deionized water, and carrying out solvothermal reaction on a green solution to obtain a solid spherical nickel composite precursor; (2) mixing the nickel composite precursor with an ethanol solution of thioacetamide, and adding an ammonium heptamolybdate aqueous solution to obtain a turbid liquid; and performing solvothermal reaction on the turbid liquid to obtain the yolk-shell structure catalyst. The yolk-shell structure catalyst with rich NiMoS phases is controllably derived by adopting a limited range vulcanization coupling in-situ intercalation strategy. Under the action of confinement vulcanization, organic molecules are intercalated in situ and assist in constructing stable 1T-MoS2 with short plate length and low stacking, so that full exposure of rim sites is promoted. According to the catalyst, an inner core NiS2 is used as an auxiliary active phase to trigger a hydrogen overflow effect, and cooperation of double active phases is promoted through an egg yolk-shell structure, so that ultra-deep desulfurization of an oil product is realized.

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The present invention discloses a compound containing a triazine structure and its application in an organic electroluminescent device, belonging to the technical field of semiconductor materials. The structure of the compound of the present invention is shown in the general formula (1), and the compound has the characteristics of high glass transition temperature and molecular thermal stability, good electron mobility and suitable HOMO / LUMO energy level. When the compound of the present invention is used as a material for an organic electroluminescent device, the driving voltage, device efficiency and device life of the device are significantly improved.

The invention provides a nitrogen-containing heterocyclic compound and an organic electroluminescent device thereof, and particularly relates to the technical field of organic photoelectric materials. When the nitrogen-containing heterocyclic compound provided by the invention is used as an electron transport layer material, the nitrogen-containing heterocyclic compound has relatively high electron mobility, and the combination efficiency of holes and electrons can be improved; when the organic electroluminescent material is used as a main body material, the organic electroluminescent material has a high triplet state energy level, so that the organic electroluminescent device has high luminous efficiency. The nitrogenous heterocyclic compound and the organic electroluminescent device thereof have good application effect and industrialization prospect.

The invention discloses a floating interactive intelligent display chip based on dynamic distance sensing and a preparation process, and relates to the field of integrated chip preparation, the floating interactive intelligent display chip comprises a substrate layer, a buffer layer, an intrinsic layer, a multi-quantum well layer, a barrier layer, a source electrode, a grid electrode, a p-GaN layer, an anode and a drain electrode, the buffer layer, the intrinsic layer, the multi-quantum well layer and the barrier layer are sequentially arranged on the substrate layer, and the source electrode, the grid electrode, the p-GaN layer, the anode and the drain electrode are sequentially arranged on the substrate layer. The source electrode is arranged on one side of the upper surface of the barrier layer, the grid electrode is arranged in the middle of the upper surface of the barrier layer, the p-GaN layer is arranged on the other side of the upper surface of the barrier layer, and the anode and the drain electrode are sequentially arranged above the p-GaN layer. An InGaN / GaN multi-quantum well structure is embedded into a p-GaN HEMT epitaxial layer structure to form a light-emitting HEMT structure, and a driving transistor, a light source and a photoelectric detector are subjected to monolithic integration, so that a floating interactive intelligent display chip with an epitaxial integrated structural characteristic is realized.

The present application relates to the field of energy storage technology, and in particular to energy storage cells and preparation methods thereof, wherein the preparation method of the energy storage cell includes preparing a positive electrode material, and the steps of preparing the positive electrode material include: preparing a mixed solution containing lithium manganate, bismuth salt and molybdate acid salt, wherein the molybdate acid salt includes at least one of molybdate, tungstate and vanadate, wherein the molar amount of bismuth ions in the mixed solution is n1, the total molar amount of molybdate ions, tungstate ions and vanadate ions is n2, and the molar amount of lithium manganate is n3, n1:n2:n3=(1.05~2.2):1:(100~200); the mixed solution is subjected to solvent thermal reaction treatment to obtain a positive electrode material. The technical solution of the present application uses molybdate acid salt and bismuth salt to modify the lithium manganate positive electrode material, so that the high temperature adaptability and cycle performance of the positive electrode material are improved.

The invention relates to the technical field of organic synthesis, in particular to a small-molecule electron transport material containing a naphthalimide terminal group and preparation and application thereof.4-bromo-1, 8-naphthalic anhydride is used as a raw material, brominated naphthalimide terminal groups are obtained through imidization, then different conjugated fused ring core units are used as raw materials, and the small-molecule electron transport material containing the naphthalimide terminal group is prepared through a one-step method. And coupling the conjugated fused ring core unit with naphthalimide through a coupling reaction to obtain the small-molecule electron transport material containing the naphthalimide terminal group. By virtue of high electron affinity, strong electron withdrawing property, good thermal stability and morphological stability and relatively strong designability of structure and function of naphthalimide, the micromolecule electron transport material shows excellent electron mobility, tight intermolecular accumulation and good three-dimensional charge transport characteristic; surface / interface defects can be effectively passivated, trap-assisted recombination is inhibited, and the photoelectric conversion efficiency and the stability of the perovskite solar cell are synergistically improved.

The invention relates to the technical field of organic electroluminescent devices, and discloses a nitrogen heterocyclic organic compound and application thereof, an organic electroluminescent device and a perovskite solar cell. The organic compound has a structure as shown in a formula (I). When the organic compound is applied to the organic electroluminescent device, the performance of the device can be improved, the driving voltage is reduced, the luminous efficiency is improved, and the service life is prolonged. # imgabs0 #

The invention provides a silicon carbide tray for rapid heat treatment and a rapid heat treatment method.The silicon carbide tray for rapid heat treatment comprises a silicon carbide base disc, and the silicon carbide base disc is provided with at least three sets of cooling table limiting openings, wafer limiting columns and through holes; the cooling table limiting opening, the wafer limiting column and the through hole are respectively arranged on the silicon carbide basal disc at equal intervals, the distance between the cooling table limiting opening and the center of the silicon carbide basal disc is a, the distance between the wafer limiting column and the center of the silicon carbide basal disc is b, and the distances between the through hole and the center of the silicon carbide basal disc are c and egt; bgt; c. According to the invention, silicon carbide is made into a tray for rapid heat treatment with a special structure, so that the wafer heating uniformity can be improved, the edge effect and the pattern loading effect in the wafer heating process are reduced, and an oxidation film with higher quality is obtained.

This invention discloses a spiro compound and its applications, belonging to the field of display technology. The chemical structural formula of the compound is as follows: ; wherein, Ar1 to Ar4 are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; Ar5, Ar6, and R are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; at least one of Z1 to Z3 is N, and the rest are CH; L is one of the following groups: , , ; R1 to R 10 Each of these compounds is independently one of hydrogen, halogen, cyano, nitro, C1-C8 alkyl, C1-C12 alkoxy, substituted or unsubstituted C6-C30 aryl, or substituted or unsubstituted C3-C30 heteroaryl. This compound exhibits excellent electron transport properties, which is beneficial for improving the voltage, efficiency, and lifetime of devices.

The invention discloses a nano-diamond polishing solution which is prepared from the following raw materials in parts by weight: 5-10 parts of modified diamond micro powder, 80-100 parts of water, 0.5-2 parts of a photocatalyst, 0.5-1 part of an oxidizing agent and 0.5-1 part of a dispersing agent, and the pH of the polishing solution is adjusted to be 8 by using a pH regulator, wherein the modified diamond micro-powder is diamond micro-powder treated by a silane coupling agent, and the silane coupling agent is tetraethoxysilane. The modified diamond micro-powder adopted by the invention is the diamond micro-powder treated by a silane coupling agent, and the silane coupling agent is tetraethoxysilane, so that the nano-diamond micro-powder is subjected to modification treatment by adopting tetraethoxysilane; the surface of the nano-diamond micro powder is covered with a layer of continuous and compact nano amorphous silicon dioxide film containing active oxygen groups, so that aggregation of nano-diamond particles is prevented, the dispersity and suspension stability of the nano-diamond particles are improved, the overall performance of the polishing solution is improved, and the surface quality of a workpiece is guaranteed.

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

The present invention provides an organic compound and an application thereof. The organic compound of the present invention belongs to a material with a specific large conjugated fused ring structure, has suitable HOMO and LUMO values, and effectively improves the ability of electron transmission; has high electron mobility, excellent thermal stability and film stability, is conducive to improving luminous efficiency, reducing injection barriers, and reducing device operating voltage; and can improve electron transmission rate, balance electron and hole injection, and improve device luminous efficiency and life; an organic electroluminescent device using the organic compound of the present invention has a lower driving voltage, a higher current efficiency and a longer life.

The bipolar plate comprises a conductive substrate, a first conductive layer and a second conductive layer are respectively arranged on the front surface and the back surface of the conductive substrate, and the first conductive layer is formed by welding a conductive network on the front surface of the conductive substrate and / or spraying or plating conductive particles on the front surface of the conductive substrate; the second conductive layer is formed by welding a conductive network on the reverse side of the conductive substrate and / or spraying or plating conductive particles on the reverse side of the conductive substrate; a positive active material layer is loaded on the surface of the first conductive layer, a negative active material layer is loaded on the surface of the second conductive layer, and the first conductive layer and the second conductive layer are rolled to form a whole. The arrangement of the first conductive layer and the second conductive layer provides a good adhesion basis for the positive active material layer and the negative active material layer, the roughness and the specific surface area of the surface of the bipolar plate are increased by the conductive network and the conductive particles, so that the active material can be better adhered to the bipolar plate, and the active material can be better adhered to the bipolar plate through rolling treatment. The active material can be more tightly combined with the conductive layer to form a whole, so that the binding force between the bipolar plate and the electrode material is enhanced, the high-power charge-discharge performance of the battery is improved, the stability of the battery structure is ensured, and the performance and the cycle life of the battery are further improved.

The invention relates to a breakdown-resistant and aging-resistant power cable. A power cable has high anti-breakdown and anti-aging requirements, however, cable materials used at present, such as polyethylene, are poor in anti-aging capability. In order to solve the problem, the breakdown-resistant and aging-resistant power cable is invented, the breakdown-resistant and aging-resistant power cable is sequentially composed of a conductor, a conductor shielding layer, an insulating layer, a wrapping layer and a protective layer from inside to outside, and the conductor shielding layer is a composite shielding material composed of organic silicon, graphene and nano molybdenum dioxide. The organic silicon in the conductor shielding layer has good heat resistance and aging resistance; the graphene has good electric conduction and heat conduction performance, can shield electromagnetic waves, and can conduct heat out to reduce the temperature; the nano molybdenum dioxide can react with peroxide at high temperature, so that the degradation effect of the organic silicon resin is delayed, and the aging resistance of the cable can be effectively improved by combining the nano molybdenum dioxide, the peroxide and the organic silicon resin. The breakdown-resistant and aging-resistant power cable can be used in the fields of high-voltage power cables and the like.

The invention relates to the technical field of display, in particular to an organic electroluminescent compound and application thereof. The organic electroluminescent compound provided by the invention has a structure shown as follows: # imgabs0 #, so that an organic electroluminescent device containing the organic electroluminescent compound has relatively low driving voltage, relatively high luminous efficiency and relatively long service life.

This application relates to the field of in-memory computing memory technology, and more particularly to a three-dimensional ferroelectric memory with an IGZO channel and its fabrication method. The three-dimensional ferroelectric memory with an IGZO channel includes: a bottom global gate line; a center select gate extending vertically relative to the bottom global gate line; a semiconductor stack structure including a gate metal layer, a ferroelectric layer, a gate oxide layer, and an IGZO channel sequentially surrounding the center select gate; a drain and a source extending horizontally relative to the center select gate into the semiconductor stack structure and contacting the ferroelectric layer; and multiple pairs of drains and sources spaced apart along the extension direction of the center select gate to form multiple ferroelectric memory transistor cells. The three-dimensional ferroelectric memory with an IGZO channel of this application improves the durability and reliability of non-volatile memory devices.

The invention relates to the technical field of organic electroluminescent devices, and discloses a nitrogen heterocyclic organic compound and application thereof, an organic electroluminescent device and a perovskite solar cell. The organic compound has a structure as shown in a formula (I). When the organic compound is applied to the organic electroluminescent device, the performance of the device can be improved, the driving voltage is reduced, the luminous efficiency is improved, and the service life is prolonged. # imgabs0 #

The application discloses a high-mobility silicon carbide N-type LDMOS device with reduced on-resistance, which comprises an N-type substrate, a P-type epitaxial layer arranged on the N-type substrate, an N-type well region, a first P-type heavily doped region, a first N-type heavily doped region, a second P-type heavily doped region connected to a source, a second N-type heavily doped region connected to a drain arranged in the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region and the second P-type heavily doped region being connected, an oxide layer arranged on the surface of the second N-type heavily doped region, the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region and the P-type epitaxial layer, a polycrystalline silicon trench gate serving as a gate of the device and extending into the P-type epitaxial layer, and an N-type buried layer arranged in the P-type epitaxial layer, one end of the N-type buried layer being connected to a channel of the device and the other end being connected to the N-type well region.

The present invention relates to a DPP-bridged perylene imide compound, a preparation method thereof and an application in an organic solar cell. The perylene imide compound has the following structural formula: #imgabs0#A is #imgabs1# or #imgabs2# wherein R 1 is selected from C1-C20 substituted or unsubstituted alkyl, R 2 is selected from C1-C30 substituted or unsubstituted alkyl, R 3 The DPP-bridged perylene imide compound provided by the present invention has good photochemical stability, strong light absorption ability, high electron mobility, and is used as a semiconductor layer in an organic solar cell device. The organic solar cell device prepared with the semiconductor layer has high photoelectric conversion efficiency.

This invention discloses a hydrothermal method for preparing Bi₂MoO₆ / tourmaline functional composite materials, belonging to the field of functional materials technology. The preparation method of the Bi₂MoO₆ / tourmaline functional composite material of this invention is as follows: Molybdenum source and bismuth source are added to deionized water to prepare solution A and solution B, respectively; tourmaline powder is added to deionized water to prepare suspension C; solution B is added dropwise to solution A and stirred, then suspension C is added and stirred again to obtain mixture D; sodium hydroxide solution is added dropwise to mixture D to prepare mixture E; mixture E is transferred to a hydrothermal reactor, sealed for reaction, and cooled to obtain hydrothermal product F; hydrothermal product F is separated by suction filtration and washed to obtain wet filter cake G; wet filter cake G is dried to obtain solid H; solid H is ground to obtain the final product. The Bi₂MoO₆ / tourmaline functional composite material prepared by this invention has high negative oxygen ion generation efficiency and environmental adaptability, and can still maintain high-efficiency release capacity in low humidity or light-free environments.

The invention relates to the field of semiconductor devices, in particular to a cascode type normally-off gallium nitride power device and a preparation method thereof. The cascode type normally-off gallium nitride power device comprises a diamond MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a depletion type GaN JFET which are interconnected; a first drain electrode, a plurality of first grid electrodes and a first source electrode are arranged on the depletion type GaN JFET, the diamond MOSFET is in metal interconnection with the depletion type GaN JFET, a second drain electrode, a second grid electrode and a second source electrode are arranged on the diamond MOSFET, the plurality of first grid electrodes are connected in parallel and then connected with the second source electrode in series, and the first source electrode is communicated with the second drain electrode. By using the cascode structure, the low-loss diamond MOSFET can control the turn-off of the high-voltage normally-open gallium nitride JFET in a smaller space, the advantages of the gallium nitride material are maintained, the heat dissipation performance of the device is effectively enhanced, the electrical performance of the device is improved, and the service life of the device is prolonged.

The invention relates to a preparation method of a double-sided conductive sheet, and belongs to the technical field of conductive plastic sheets. The method comprises the steps of preparing an A-side material and a B-side material, the A-side material is obtained by mixing polystyrene, rubber and toner, and the B-side material is obtained by mixing polystyrene, conductive master batch and rubber. And carrying out extrusion, drying and injection molding treatment through a double-layer extruder to finally obtain the sheet with double-sided conductivity. The prepared double-sided conductive sheet has good conductivity, mechanical strength and heat resistance, and is suitable for the fields of electronics, automobiles and the like.

The invention relates to the technical field of display, in particular to an organic electroluminescent compound and application thereof. The organic electroluminescent compound provided by the invention has a structure shown as follows: # imgabs0 #, so that an organic electroluminescent device containing the organic electroluminescent compound has relatively low driving voltage, relatively high luminous efficiency and relatively long service life.

The application discloses a kind of heterojunction photoelectric detectors and preparation method thereof.The detector includes: substrate;Semiconductor epitaxial structure, at least including channel layer being arranged on the substrate and being located on the barrier layer of channel layer;Wherein, the thickness and component of the barrier layer are configured so that no two-dimensional electron gas is generated at the heterojunction interface between the channel layer and the barrier layer;First electrode and second electrode, set in the semiconductor epitaxial structure and electrically connected with the two-dimensional electron gas, constitute the electrical input end and output end of the heterojunction photoelectric detector.By configuring the thickness and component of the barrier layer so that no two-dimensional electron gas is generated in the channel, the damage of etching process to the channel is avoided, and the ultraviolet detector with extremely low dark current, high photocurrent density and no need to rely on etching process to deplete the channel is realized.

The invention discloses a benzo pentacyclic compound and application thereof, and belongs to the technical field of display. The chemical structural formula of the compound is shown in the specification, wherein Ar, R1 to R6 are respectively and independently hydrogen, deuterium, halogen, cyano, nitro, alkyl of C1-C18, alkoxy of C1-C12, substituted or unsubstituted aryl of C6-C30 or substituted or unsubstituted heteroaryl of C3-C30, and R1 to R6 are respectively and independently selected from hydrogen, deuterium, halogen, cyano, nitro, alkyl of C1-C18, alkoxy of C1-C12, substituted or unsubstituted aryl of C6-C30 or substituted or unsubstituted heteroaryl of C3-C30; ar1 and Ar2 are respectively and independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; each of L1 to L3 independently represents a single bond, a substituted or unsubstituted C6-C60 arylene group, or a substituted or unsubstituted C3-C30 heteroarylene group; at least one of Z1 to Z3 is N, and the balance is CH; a is O, S, Se or CR7R8. The compound has excellent electron transmission performance, and is beneficial to improving the voltage, efficiency and service life of a device.

The invention belongs to the technical field of organic solar cell materials, and discloses an asymmetric small molecule receptor photovoltaic material and a preparation method and application thereof. According to the present invention, five kinds of the asymmetric small molecule receptor materials, i.e., IDT-S-4F, IDT-S-4Cl, IDT-S-2F2Cl, IDT-S-2Cl2 F and IDT-2Cl2 F, are synthesized; according to the present invention, the J-V test results show that the asymmetric small molecule receptor PM6: X (X = IDT-S-4F, IDT-S-2F2Cl, IDT-S-2Cl2F) has characteristics of high fill factor and high current density; the Paios test result shows that the acceptor has higher charge carrier mobility, more sensitive photocurrent response speed, better inhibition of bimolecular recombination and trap-assisted recombination, and higher exciton dissociation and charge recombination efficiency. A DFT (Discrete Fourier Transform) result shows that the acceptor material has a smaller dihedral angle, which is beneficial to intermolecular accumulation, so that the material has better carrier mobility. Various tests show that construction of the asymmetric small molecule receptor is a strategy for improving the performance of the device.

The embodiment of the invention discloses a novel semiconductor device and a manufacturing method, the novel semiconductor device comprises a diamond epitaxial layer, an aluminum nitride epitaxial layer, a source electrode, a grid electrode and a drain electrode, the diamond epitaxial layer is arranged above a diamond substrate; the aluminum nitride epitaxial layer is arranged on the diamond epitaxial layer, and the diamond epitaxial layer is located between the aluminum nitride epitaxial layer and the diamond substrate; a source electrode, a grid electrode and a drain electrode are all arranged on the side, away from the diamond epitaxial layer, of the aluminum nitride epitaxial layer, grid electrode voltage is applied between the source electrode and the grid electrode, and active drain voltage is applied between the source electrode and the drain electrode. The diamond semiconductor device provides a high-performance solution for high-pressure, high-temperature, high-power and intense-radiation application scenes, and has a huge market prospect.