11results about How to "Improve material quality" patented technology

The invention discloses an intelligent control method and system for waterproof material production and processing, relates to the technical field of automatic control, and realizes comprehensive monitoring and regulation of a waterproof material production process, firstly, through real-time data acquisition of an industrial camera and a sensor group, construction of a high-dimensional feature vector Vfeed (t) and application of a classification model, a high-dimensional feature vector Vfeed (t) is obtained; and the defects on the surface of the material can be accurately identified and classified. And then, by generating a feedback control signal Cctrl (Vfeed, S, P), the system can adjust the production speed S and the pressure P in time, and dynamically regulate and control the detected defective material. Moreover, the system ensures the adjustment effectiveness in the production process through an iterative verification mechanism, and avoids the limitations, including low efficiency, misjudgment and missing detection, of the traditional manual inspection and optical detection methods. The production efficiency and the material quality are improved, and the defect rate and the rework rate are effectively reduced.

The utility model relates to a flexible wedge-type valve clack which can be used for a wedge-type elastic single-gate-plate gate valve. The wedge-shaped valve clack comprises a wedge-shaped valve clack body, wherein a guide groove, a flexible groove B, a flexible groove A, a T-shaped groove, a sealing surface A and a sealing surface B are arranged on the wedge-shaped valve clack body. The T-shaped groove is formed in the top end of the wedge-shaped valve clack body, the sealing face A and the sealing face B are symmetrically arranged on the left side and the right side of the wedge-shaped valve clack body, the flexible groove A and the flexible groove B are also formed in the left side and the right side of the wedge-shaped valve clack body, the flexible groove A is parallel to the sealing face A, the flexible groove B is parallel to the sealing face B, and the depth of the flexible groove A and the depth of the flexible groove B exceed the horizontal center line of the wedge-shaped valve clack body. And the end parts of the flexible groove A and the flexible groove B are provided with circles R. The wedge angle between the sealing face A and the sealing face B can be adjusted, it is guaranteed that the valve clack is tightly attached to the sealing face of the valve seat, and good sealing performance is achieved. The flexible wedge type valve clack is machined and formed by a forge piece and has no casting defects such as cracks, air holes, sand holes and looseness, and the product quality and the sealing performance are greatly improved.

This utility model discloses a valve manufacturing mold, including a first mold, a second mold, and a third mold. The first mold includes two first half-molds and a first mold core, which together form a first mold cavity. The two first half-molds have first injection tubes. The second mold includes two second half-molds and a second mold core, which together form a second mold cavity. The two second half-molds have second injection tubes. The third mold includes two third half-molds and a third mold core, which together form a third mold cavity. The two third half-molds have third injection tubes. This utility model has a reasonable structural layout, and its overall structure can accurately replicate the complex internal morphology of valves, such as irregular flow channels. It can meet the performance requirements of valves as core components of fluid control systems without subsequent processing, achieving simultaneous improvement in production efficiency, material utilization, and finished product quality.

The invention relates to the field of infrared detection, and discloses a molecular beam epitaxial growth process control method based on artificial intelligence, which comprises the following steps: S1, growth material selection: selecting a semiconductor material with specific photoelectric properties according to target application requirements; s2, wafer growth: realizing epitaxial growth of the wafer in an ultrahigh vacuum environment; s3, data acquisition and high-quality wafer screening: acquiring growth process data in real time, and detecting wafer quality through X-ray diffraction and an atomic force microscope; s4, data processing: performing signal processing and dimension reduction operation on the acquired data, and removing noise and abnormal values; s5, model training; and S6, optimizing and controlling. The system can automatically analyze and adjust key parameters in the growth process through the artificial intelligence technology, accurate control is achieved, and dependence on experience of operators is reduced. The system automatically processes and optimizes growth parameters, and even if the experience of an operator is insufficient, high-quality material growth can be achieved through the system.

The invention relates to the technical field of nanowire photoelectric detector preparation, in particular to a beta-Ga2O3 nanowire / p-Si heterojunction photoelectric detector and a preparation method thereof.The preparation method comprises the following steps that Au particles are subjected to annealing treatment after evaporation, and an area containing Au nanoparticles and an area not containing Au nanoparticles are formed on the surface of a p-Si substrate; putting a Ga elementary substance and the annealed p-Si substrate into a tubular furnace, and enabling the Ga elementary substance to grow a beta-Ga2O3 nanowire on the Au-containing nanoparticles; and respectively manufacturing electrodes on the surface of the beta-Ga2O3 nanowire and the surface of the p-Si substrate on which no nanowire grows, so as to obtain the beta-Ga2O3 nanowire / p-Si heterojunction photoelectric detector. The preparation method disclosed by the invention has the advantages of high material quality and yield, simple device preparation method, low cost and the like, and the practical application of the beta-Ga2O3 nanowire-based solar-blind ultraviolet photoelectric detector is promoted.

The application relates to a preparation device for environment-friendly recycled concrete and relates to the technical field of recycled concrete production equipment, which comprises a support, a tank body mounted on the support and a crusher arranged on the support, a working cavity is formed in the tank body, the working cavity top is communicated with the crusher through a pipeline, a connecting rod is mounted on the tank body top, one end of the connecting rod extends into the working cavity and is connected with a motor, a stirring paddle is arranged on the motor output shaft, a plurality of feeding ports are integrally connected on the tank body side wall in the circumferential direction, the plurality of feeding ports are communicated with the working cavity, different mixtures for making concrete are respectively filled in the plurality of feeding ports, a discharge port is formed in the working cavity bottom, an electromagnetic control valve is mounted on the discharge port, a material box containing concrete is placed in the support, and a screening and recycling mechanism for preventing large-particle concrete from falling into a mixing position is arranged in the tank body. The application integrates the structure of the recycled concrete preparation device, and the recycled concrete operation is more convenient and efficient.

The invention discloses a germanium-based barrier impurity band detector material based on plasma activation bonding and a preparation method thereof, and the method comprises the following steps: S1, providing a germanium substrate (1), cleaning the germanium substrate (1), and growing a doped germanium absorption layer (2) on the surface of the germanium substrate (1) by adopting a chemical vapor deposition method; s2, performing plasma activation treatment on the surface of the doped germanium absorption layer (2) and the surface of an intrinsic germanium sheet (3); s3, the surface of the activated doped germanium absorption layer (2) and the surface of the activated intrinsic germanium sheet (3) are aligned and attached, and bonding is carried out; s4, thinning and polishing the bonded intrinsic germanium sheet (3) to form a germanium intrinsic barrier layer; the high-conductivity germanium substrate (1) is a single crystal germanium substrate, the resistance of the substrate is 0.0001-0.02 omega.cm, and the thickness of the germanium substrate is 200-700 microns; ar / O2 mixed gas is adopted in the plasma activating treatment.

The utility model relates to the field of electric spark diamond drill bit punching devices, and discloses an electric spark diamond drill bit automatic punching device which comprises a machining box, connectors are connected to the inner wall of the machining box in a sliding mode, a supporting rod is fixedly connected to the close sides of the two connectors, and a middle block is fixedly connected to the middle of the outer wall of the supporting rod. Wherein the inner wall of one connector is fixedly connected with a second motor, the output end of the second motor is fixedly connected with an output rod, the top of the outer wall of the output rod is provided with a limiting groove, the two sides of the outer wall of the supporting rod are both slidably connected with displacement blocks, and the two sides of the outer wall of the output rod are both slidably connected with first bevel gears. And the bottom of the inner wall of the displacement block is rotationally connected with a second bevel gear. According to the diamond drilling machine, the first motor, the lead screw, the supporting rod, the displacement block, the grinding roller and other components are used in cooperation, the quality of materials obtained after drilling of the diamond drill bit can be effectively improved, additional devices are reduced, and the integrated machining efficiency is improved.

The invention relates to the technical field of recessing machines, and discloses a chip guiding type metal sheet recessing machine which comprises an equipment platform, a feeding platform arranged at the top of the equipment platform, a mounting table arranged on one side of the feeding platform, a tool rest arranged on the surface of the mounting table and a tool bit arranged at the bottom of the tool rest. The mounting assembly and the chip guiding assembly are arranged on the outer side of the tool rest, the adjusting assembly is arranged at the top of the chip guiding assembly, and the chip guiding assembly specifically comprises an upper sliding plate arranged on the outer side of the tool rest. According to the chip guiding type metal sheet recessing machine, by arranging the mounting assembly, when the equipment is started to broach a metal plate, the adjusting assembly forms circulating airflow between the air inlet groove and the air outlet groove, so that metal chips can be guided to enter the air inlet groove, the metal chips generated by broaching are conveniently, accurately and rapidly collected, and the machining efficiency is improved. The influence of metal chips on the grooving work of the metal plate is avoided, the machining precision is improved, the quality of machined plates is improved, and the service life of equipment is prolonged.

This invention discloses a material structure and epitaxial method for a gallium nitride Schottky diode, comprising, in the epitaxial order: a substrate; an aluminum nitride (AlN) nucleation layer; a lower aluminum gallium nitride (AlGaN) stress modulation layer; an unintentionally doped (Uid) GaN buffer layer; and an upper AlGaN stress modulation layer; n + -Heavy GaN layer; n ++ -GaN ohmic highly doped layer; n-GaN transition layer; n ‑ -GaN lightly doped layer. Based on the metal-organic chemical vapor deposition (MOCVD) method, a stress modulation layer of AlGaN underlayer is introduced at the interface between the AlN nucleation layer and the UidGaN buffer layer to reduce thermal mismatch stress; and a stress modulation layer of AlGaN underlayer is introduced at the interface between the UidGaN buffer layer and the n + - The GaN heavily doped layer interface introduces a stress modulation layer on top of AlGaN to reduce lattice mismatch stress; in n ++ -GaN ohmic highly doped layer and n ‑ An n-GaN transition layer is introduced between the lightly doped GaN layers, and n ‑ - The GaN lightly doped layer is produced using a high-temperature, low-growth-rate process to improve n ‑ - Quality and electronic transport properties of lightly doped GaN layers. The GaN SBD epitaxial material achieved by this method has high quality, low stress, and low sheet resistance, which is beneficial to improving the performance of GaN SBD devices.

The invention discloses a precision roll forging-die forging composite forming process for a movable arm of engineering machinery, which comprises the following steps of: carrying out two-pass roll forging on a heated metal blank to obtain an intermediate blank with a required shape, bending and die forging to obtain a formed product, and directly entering the bending and die forging forming procedures of the intermediate blank without secondary heating; a workpiece extends in the axis direction of the workpiece through two-pass roll forging machining, the surface of the workpiece is extruded through a profiled groove in a two-pass roll forging die, and the workpiece is rolled into the needed section shape and size. According to the method, the heated metal blank with the circular cross section is subjected to two-pass roll forging to be manufactured into the blank for the subsequent forming procedure, the intermediate blank with the good shape, size and surface quality is obtained, the quality of the movable arm forge piece is effectively improved, and the defects that the forge piece is folded and cannot be fully filled due to the shape problem of the manufactured blank are overcome; and continuous local deformation is achieved in the roll forging process, so that the metal flow direction is consistent with the shape of the intermediate blank, the metallographic structure is uniform and compact, and forgings with good mechanical performance can be obtained easily.