4results about How to "Improve material quality" patented technology

This utility model discloses a valve manufacturing mold, including a first mold, a second mold, and a third mold. The first mold includes two first half-molds and a first mold core, which together form a first mold cavity. The two first half-molds have first injection tubes. The second mold includes two second half-molds and a second mold core, which together form a second mold cavity. The two second half-molds have second injection tubes. The third mold includes two third half-molds and a third mold core, which together form a third mold cavity. The two third half-molds have third injection tubes. This utility model has a reasonable structural layout, and its overall structure can accurately replicate the complex internal morphology of valves, such as irregular flow channels. It can meet the performance requirements of valves as core components of fluid control systems without subsequent processing, achieving simultaneous improvement in production efficiency, material utilization, and finished product quality.

The application relates to a preparation device for environment-friendly recycled concrete and relates to the technical field of recycled concrete production equipment, which comprises a support, a tank body mounted on the support and a crusher arranged on the support, a working cavity is formed in the tank body, the working cavity top is communicated with the crusher through a pipeline, a connecting rod is mounted on the tank body top, one end of the connecting rod extends into the working cavity and is connected with a motor, a stirring paddle is arranged on the motor output shaft, a plurality of feeding ports are integrally connected on the tank body side wall in the circumferential direction, the plurality of feeding ports are communicated with the working cavity, different mixtures for making concrete are respectively filled in the plurality of feeding ports, a discharge port is formed in the working cavity bottom, an electromagnetic control valve is mounted on the discharge port, a material box containing concrete is placed in the support, and a screening and recycling mechanism for preventing large-particle concrete from falling into a mixing position is arranged in the tank body. The application integrates the structure of the recycled concrete preparation device, and the recycled concrete operation is more convenient and efficient.

The invention discloses a germanium-based barrier impurity band detector material based on plasma activation bonding and a preparation method thereof, and the method comprises the following steps: S1, providing a germanium substrate (1), cleaning the germanium substrate (1), and growing a doped germanium absorption layer (2) on the surface of the germanium substrate (1) by adopting a chemical vapor deposition method; s2, performing plasma activation treatment on the surface of the doped germanium absorption layer (2) and the surface of an intrinsic germanium sheet (3); s3, the surface of the activated doped germanium absorption layer (2) and the surface of the activated intrinsic germanium sheet (3) are aligned and attached, and bonding is carried out; s4, thinning and polishing the bonded intrinsic germanium sheet (3) to form a germanium intrinsic barrier layer; the high-conductivity germanium substrate (1) is a single crystal germanium substrate, the resistance of the substrate is 0.0001-0.02 omega.cm, and the thickness of the germanium substrate is 200-700 microns; ar / O2 mixed gas is adopted in the plasma activating treatment.

This invention discloses a material structure and epitaxial method for a gallium nitride Schottky diode, comprising, in the epitaxial order: a substrate; an aluminum nitride (AlN) nucleation layer; a lower aluminum gallium nitride (AlGaN) stress modulation layer; an unintentionally doped (Uid) GaN buffer layer; and an upper AlGaN stress modulation layer; n + -Heavy GaN layer; n ++ -GaN ohmic highly doped layer; n-GaN transition layer; n ‑ -GaN lightly doped layer. Based on the metal-organic chemical vapor deposition (MOCVD) method, a stress modulation layer of AlGaN underlayer is introduced at the interface between the AlN nucleation layer and the UidGaN buffer layer to reduce thermal mismatch stress; and a stress modulation layer of AlGaN underlayer is introduced at the interface between the UidGaN buffer layer and the n + - The GaN heavily doped layer interface introduces a stress modulation layer on top of AlGaN to reduce lattice mismatch stress; in n ++ -GaN ohmic highly doped layer and n ‑ An n-GaN transition layer is introduced between the lightly doped GaN layers, and n ‑ - The GaN lightly doped layer is produced using a high-temperature, low-growth-rate process to improve n ‑ - Quality and electronic transport properties of lightly doped GaN layers. The GaN SBD epitaxial material achieved by this method has high quality, low stress, and low sheet resistance, which is beneficial to improving the performance of GaN SBD devices.