129161results about "Photovoltaic energy generation" patented technology

Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.

Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, patternable and is suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like.

Disclosed is a computerized method for dispatching energy from distributed resources in a discharge event so that the energy stored in individual devices is levelized, or so that an operator request is met. Evaluation of event parameters may be deferred. The method may be utilized to dispatch energy from plug-in electric vehicles. Systems and methods to account for electricity dispatched to or from electric vehicles are disclosed. Systems and methods for incentivizing consumers to participate in a dispatch event or curtail energy use are disclosed.

As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a β-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R¹ to R⁴ each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

A system and method for combining power from DC power sources. Each power source is coupled to a converter. Each converter converts input power to output power by monitoring and maintaining the input power at a maximum power point. Substantially all input power is converted to the output power, and the controlling is performed by allowing output voltage of the converter to vary. The converters are coupled in series. An inverter is connected in parallel with the series connection of the converters and inverts a DC input to the inverter from the converters into an AC output. The inverter maintains the voltage at the inverter input at a desirable voltage by varying the amount of the series current drawn from the converters. The series current and the output power of the converters, determine the output voltage at each converter.

The present invention provides an efficiency booster circuit and accompanying switch mode power conversion technique to efficiently capture the power generated from a solar cell array that would normally have been lost, for example, under reduced incident solar radiation. In an embodiment of the invention, the efficiency booster circuit generates an output current from the solar cell power source using a switch mode power converter. A control loop is closed around the input voltage to the converter circuit and not around the output voltage. The output voltage is allowed to float, being clamped by the loading conditions. If the outputs from multiple units are tied together, the currents will sum. If the output(s) are connected to a battery, the battery's potential will clamp the voltage during charge. This technique allows all solar cells in an array that are producing power and connected in parallel to work at their peak efficiency.

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

An apparatus for distributing light from a waveguide through a collimating array, or collecting light over a given area into a waveguide. Light received within a waveguide is propagated transmissively and retained by total internal reflection, except in response to impinging upon deflector elements which sufficiently redirect the light to escape the waveguide into a collimator array that aligns and distributes the light. In a light collector, a collection array collects and collimates the received light and directs it at the surface of a waveguide, within which deflectors properly positioned in relation to each collector of the collector array, deflect the angle of the light so that it propagates through the waveguide in response to total internal reflection. The apparatus can be fabricated into an efficient and compact form.