242results about "Diode" patented technology

A memory structure includes insulating layers, gate layers, a first doping layer, second doping layers, third doping layers, a columnar channel, a first dielectric layer, second dielectric layers, and a third dielectric layer. The first doping layer and the columnar channel penetrate through the insulating layers and the gate layers that are alternately stacked. The second doping layers are in direct contact with the first doping layer to form tunnel diodes, in which the second doping layers and the insulating layers are alternately stacked. The third doping layers surround the columnar channel and are connected to the second doping layers. The first dielectric layer is between the first doping layer and the gate layers. The second dielectric layers are between the third doping layers and the gate layers. The third dielectric layer is between the columnar channel and the third doping layers.

The invention discloses a bidirectional power electronic switch, a hybrid DC circuit breaker and a control method. The bidirectional power electronic switch comprises a diode bridge module, a buffer circuit, a voltage limiting circuit and an impedance adjusting circuit. The impedance adjusting circuit is connected in parallel with two ends of the diode bridge module; the buffer circuit is connected in parallel with a breaking electronic switch in the diode bridge module; the voltage limiting circuit is connected in parallel with two ends of the breaking electronic switch; the diode bridge module controls the breaking electronic switch to switch current according to a breaking instruction of the power system; when the breaking electronic switch is locked, the buffer circuit suppresses the voltage and current changes of the breaking electronic switch in the switching process, the voltage limiting circuit limits the overvoltage level of the breaking electronic switch, and the impedance adjusting circuit reduces the oscillation frequency. The impedance adjusting circuit reduces the oscillation frequency, reduces the requirement for the reverse recovery speed of the diode, reduces the stress of the diode bridge type module, and enables a conventional common diode to be not liable to be damaged.

A half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

A temperature sensor circuit, a control circuit, and a control method are provided. The temperature sensor circuit comprises a temperature sensor and a control circuit. The control circuit is coupled to the temperature sensor and comprises a current source, a sampling circuit, and a computing circuit. The current source is configured to provide a first current and a second current to the temperature sensor in different time periods. The sampling circuit is coupled to the temperature sensor and configured to obtain and store a first voltage information and a second voltage information from the temperature sensor when the first current and second current are respectively provided. The computing circuit is coupled to the sampling circuit and configured to generate a sensing result corresponding to a difference of subtracting the second voltage information from the first voltage information.

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

To provide a semiconductor device in which the damage of a diode is suppressed.SOLUTION: A semiconductor device 100 includes a semiconductor substrate 10, and an ESD protection circuit 50, an internal circuit 52, an input-output terminal Ts, and power source terminals T1 and T2 on the semiconductor substrate. The ESD protection circuit includes diodes D1 and D2 and an ESD protection element 54. The diode D1 has a cathode connected to the power source terminal T1 and an anode connected to the input-output terminal. The diode D2 has a cathode connected to the input-output terminal Ts and an anode connected to the power source terminal T2. The ESD protection element is connected in parallel to the diodes D1 and D2 between the power source terminals and includes transistors F1 and F2 that are NMOSFET. A transistor F1 has a drain connected to the power source terminal T1 and a source and a gate connected together. A transistor F2 has a drain connected to the source of the transistor F1, has a source connected to the power source terminal T2, and has the source and a gate connected together.SELECTED DRAWING: Figure 1

The utility model relates to the technical field of capacitive shaft keyboards, and discloses a capacitive shaft keyboard circuit, which comprises a main control module; a voltage stabilizing module; an LED module; a keyboard plate module; and the voltage stabilizing module, the LED module and the key board module are electrically connected with the main control module. All information in the triggering process of the capacitor shaft is converted into electric signals through the tolerance controller, and the precision is as high as 0.04 mm. A user only needs to slightly press the key, and the keyboard can quickly respond and generate a trigger signal; a user is allowed to set a trigger point by himself / herself through driving, the interval can be 0.04 mm, great flexibility and individualized space are provided for the user, and the user can adjust the trigger force and stroke of the key according to own use habits and requirements, so that the input efficiency and comfort are optimized; according to the utility model, only one pin is required to have electrical performance to work, and other redundant pins can be abandoned or not adopted, so that the circuit structure is simplified, the production cost is reduced, and the reliability and stability of the circuit are improved.

In one embodiment, the electrical switching system (1) comprises semiconductor switches (41, 42, 43) and a control unit (3), in which-the semiconductor switches (41, 42, 43) each comprise a transistor structure (51) and a diode structure (52), which are electrically connected to each other in an anti-parallel manner,-the semiconductor switches (41, 42, 43) are arranged in a first branch (21) and a second branch (22), the first branch is a series connection of the first semiconductor switches (41, 43) and the second branch is a series connection of the second semiconductor switches (42), the first branch (21) and the second branch (22) being electrically connected in parallel, and-in the case that a defective semiconductor switch (43) of the first semiconductor switches (41, 43) is in a short-circuit failure mode,-the first semiconductor switches (41, 43) of the first semiconductor switches (41, 43) of the second semiconductor switches (42) of the second semiconductor switches (42) are electrically connected in parallel. The control unit (3) switches on the remaining operating semiconductor switches (41) of the first semiconductor switches (41, 43) during the phase of the reverse current flow direction.

The utility model relates to the field of microwave test and electronic countermeasure, in particular to a microstrip frequency hopping filter circuit and device, which comprises a coupling microstrip structure, a resonant switch assembly, a matching switch assembly and a control assembly, the resonant switch assembly is connected with the coupling end of the coupling microstrip structure and is used for adjusting the working frequency; the matching switch assembly is connected with the input end or the output end of the coupling microstrip structure and is used for matching and tuning; the control assembly controls the resonance switch assembly and the matching switch assembly to carry out frequency hopping filtering. By forming a coupling structure of the microstrip lines, coupling matching of the microstrip lines in the frequency hopping filter is achieved, in-band matching is kept during frequency modulation, and good standing waves and small in-band insertion loss fluctuation are achieved. And a good Chebyshev waveform is kept in a specified frequency hopping range, and meanwhile, standing waves and in-band insertion loss are not remarkably deteriorated. And the overall size can be greatly reduced, the production process is simplified, the assembly difficulty is reduced, the performance is reliable, and the cost is low.

The invention belongs to the technical field of power electronics, and particularly relates to a solid-state direct-current circuit breaker module based on IGCTs, an upper pressing plate and a lower pressing plate are connected through a first screw rod, the number of first radiators is one more than that of the IGCTs, and the first radiators and the IGCTs are arranged in an overlapping mode; the number of the second radiators is one more than that of the first fast recovery diodes, and the second radiators and the first fast recovery diodes are arranged in an overlapping mode. First insulating cushion blocks are arranged between the first radiators and the lower pressing plate and between the second radiators and the lower pressing plate. Insulating cushion blocks II are arranged between the radiator I and the upper pressing plate as well as between the radiator II and the upper pressing plate and correspondingly abut against the radiator I and the radiator II through two force application mechanisms positioned on the inner side of the upper pressing plate; the piezoresistor is installed on the side, away from the first radiator, of the second radiator, the RCD protection unit is installed on the insulating plate, and the insulating plate is installed on the upper pressing plate and the lower pressing plate and located on one side of the first radiator and one side of the second radiator. The structure is compact, maintenance is easy, pressure is uniform, stray inductance is reduced, and overall stability and response speed are improved.

The invention relates to a switch. An electronic device for driving a switch is provided. An example electronic device for driving a switch includes: a first driving circuit of a switch referenced to a first terminal adapted to receive an alternating potential, formed on a first substrate, and including a first diode whose anode is connected to the first substrate; a second driving circuit referenced by a second terminal adapted to receive a reference potential, formed on the second substrate, and including a second diode whose anode is connected to the second substrate; and the cathode of the first diode is connected to the second driving circuit, and the cathode of the second diode is connected to the first driving circuit.

An ideal diode circuit comprises a transistor, a low-voltage reference module, an ultra-low-voltage power supply module and a voltage drop detection circuit, the low-voltage reference module provides three different reference voltages and bias voltages, the ultra-low-voltage power supply module adopts N charge pumps in series to step up the voltage drop of the transistor, and outputs a control voltage Vcp to supply power for the internal circuit of the ideal diode, the voltage drop detection circuit compares the voltage drop of the transistor with the three reference voltages through comparators respectively, controls the opening or closing of the charge pump of the ultra-low-voltage power supply module, and realizes adaptive variable amplification multiple step-up of the voltage drop VIN-VOUT. The ideal diode control technology provided by the application utilizes variable charge pump amplification multiple, provides adaptive adjustment of the amplified voltage, and meets the continuous and stable operation of the circuit in the working voltage range of the ideal diode.

The invention relates to an electronic device comprising: - a component having a resistance (R120) with a negative temperature coefficient, and - a temperature control means having an electrical resistance (R130) varying as a function of the temperature T such that the sum of the total resistance (R) is, on a second temperature subrange (302), greater than a setpoint temperature (305), strictly greater than the total resistance (R) at the setpoint temperature (305).

A battery switch driving circuit according to an embodiment of the present invention includes a first battery input terminal and a second battery input terminal, a converter located between the first battery input terminal and the second battery input terminal, a first switch located between the second battery input terminal and the converter and cutting off a power supply input to the second battery input terminal when the first switch is off, and a switch driving unit for turning on the first switch, the switch driving unit including a first capacitor that is charged and discharged in response to the on / off of a second switch operated by a PWM signal, and a second capacitor that is charged in response to the on / off of the second switch by a voltage charged in the first capacitor, thereby turning on the first switch.

An electronic device, comprising a component having a resistance with a negative temperature coefficient, and a temperature control means having an electrical resistance varying according to the temperature, such that the sum of the total resistance is, over a second temperature subrange greater than a setpoint temperature strictly greater than the total resistance at the setpoint temperature

A voltage gate driver for a semiconductor-based transistor, the voltage gate driver comprising: a voltage generator circuit arranged to receive a drive voltage, the voltage generator circuit including a capacitor connected in series with a Zener diode, wherein a cathode of the Zener diode is arranged to be connected to a gate of the semiconductor-based transistor; a bias current circuit connected in parallel across the capacitor, wherein the bias current circuit includes a switch and is arranged to provide a bias current to the cathode of the Zener diode based on a state of the switch, wherein the bias current circuit is arranged to provide the bias current to the cathode of the Zener diode when the switch is in a closed state and is arranged to prevent the provision of the bias current to the cathode of the Zener diode when the switch is in an open state.

The utility model provides an electrode switching device. The electrode switching device comprises a controller, an H-bridge upper tube circuit, an H-bridge lower tube circuit and a solid-state relay, the controller is electrically connected with the solid-state relay; one end of the H-bridge upper tube circuit is connected with the first power supply, and the other end of the H-bridge upper tube circuit is electrically connected with the solid-state relay; one end of the H-bridge lower tube circuit is electrically connected with the H-bridge upper tube circuit, and the other end of the H-bridge lower tube circuit is grounded; the H-bridge upper tube circuit is switched on to switch a positive electrode, and the H-bridge lower tube circuit is switched on to switch a negative electrode; the controller is used for controlling on or off of the solid-state relay; and the solid-state relay is used for switching on or switching off the H-bridge upper tube circuit. The H-bridge upper tube circuit, the H-bridge lower tube circuit and the solid-state relay are integrated on one electrode switching device, the electrode switching device can be directly connected with a direct-current power supply, free switching of the positive electrode and the negative electrode is controlled, the manufacturing cost is low, and the universality of the electrode switching device is also improved.

A driver circuit for a power transistor. The driver circuit allows for robust turn-off of the power transistor, and for reduced power losses when the power transistor transitions back on. The driver circuit controls what voltage is applied to the gate terminal of the power transistor. The driver circuit prevents unintended turn-on of the power transistor by applying a negative voltage to the gate terminal of the power transistor when transitioning off. The driver circuit allows for reduced power losses when transitioning back on by allowing the gate terminal of the power transistor to increase from the negative voltage to a less negative voltage before applying a positive voltage to turn on the power transistor.

The utility model discloses a kind of high-end ideal diode based on band gap reference, including high-end load switch MOS tube, voltage comparator and band gap reference voltage module, the high-end load switch MOS tube, voltage comparator and band gap reference voltage module composition integral circuit, the MOS tube is PMOS tube or NMOS tube.This circuit has the function of preventing backflow, can protect front-stage circuit;With lower loss, small static current loss;Use high-end load switch and voltage comparator, circuit is simple, cost is very low, and practicality is strong;Voltage comparator is used to compare the voltage of the voltage divider of MOS tube output end and reference voltage, band gap reference voltage source has higher precision, strong anti-interference ability, and there is no backflow current;Reduce the static loss of equipment, prolong the working time of battery, equipment maintenance cost is low, loss reduces greatly, suitable for thing networking NB-IoT ultra-low loss ideal diode circuit application, circuit is very simple and has very low cost advantage.

A method for manufacturing a solar panel having a solar cell and integrated circuits on the same silicon wafer is disclosed. The solar panel include two groups of semiconductor wafers. Each of the first group of semiconductor wafers includes a solar cell for generating direct current via the photovoltaic effect. Each of the second group of semiconductor wafers includes a solar cell for generating direct current via the photovoltaic effect, and some integrated circuits arranged to perform computations. The integrated circuits are solely powered by the solar cell from the second group and other solar cells from the group of semiconductor wafers.

The invention discloses a fast rear-end auxiliary tube control high-end ideal diode based on an NMOS tube, and relates to the technical field of power diodes, the fast rear-end auxiliary tube control high-end ideal diode comprises a circuit, the circuit comprises a power supply VCC, an NMOS main tube V1, a comparator circuit, a bias power supply and a driving circuit; the comparator circuit comprises two independent auxiliary tubes or geminate transistors which have the same parameters and are packaged together and a resistor, the comparator circuit compares the size of an input end power supply VCC and the size of an output end power supply Vout, outputs a comparison signal, transmits an amplification signal to a grid electrode of the NMOS main tube V1 through the driving circuit, and controls the conduction and cut-off of the NMOS main tube V1; the source electrode of the NMOS main tube V1 is connected to a power supply VCC, and the drain electrode of the NMOS main tube V1 is connected to an output end power supply Vout. The fast rear-end auxiliary tube control high-end ideal diode based on the NMOS tube has the beneficial effects that the conduction and cut-off of the high-end ideal diode are accelerated, backward flowing can be prevented, and a pre-stage circuit can be protected.

A temperature sensor circuit, a control circuit, and a control method are provided. The temperature sensor circuit comprises a temperature sensor and a control circuit. The control circuit is coupled to the temperature sensor and comprises a current source, a sampling circuit, and a computing circuit. The current source is configured to provide a first current and a second current to the temperature sensor in different time periods. The sampling circuit is coupled to the temperature sensor and configured to obtain and store a first voltage information and a second voltage information from the temperature sensor when the first current and second current are respectively provided. The computing circuit is coupled to the sampling circuit and configured to generate a sensing result corresponding to a difference of subtracting the second voltage information from the first voltage information.

The utility model discloses a radio frequency switch circuit for high-power application and corresponding electronic equipment. According to the radio frequency switch circuit, through the innovative cross feedback structure, the excellent technical effect is achieved, and particularly, the radio frequency switch circuit has outstanding performance in the aspects of high power bearing capacity and high harmonic processing capacity. Body end connecting diodes of the main circuit and the branch circuit are completely separated from source ends and drain ends of switching transistors in respective circuits, so that internal connection is fundamentally avoided, a nonlinear effect caused by parasitic diodes can be effectively reduced, and harmonic distortion is reduced. Therefore, the radio frequency switch circuit not only has high power bearing capacity, but also can bear large voltage fluctuation and maintain definition and accuracy of communication signals; the radio frequency switch circuit also has high harmonic wave processing capability, can effectively reduce harmonic wave interference caused by high-power signals, and meets strict requirements of a wireless communication system on the radio frequency switch circuit.

The invention relates to the technical field of semiconductor production and manufacturing, in particular to a switching circuit for a semiconductor miniaturized quick-response pressure switch and the pressure switch, and the switching circuit comprises a power supply circuit, a sensor power supply circuit, a signal processing circuit, a comparison circuit and an indication and output circuit which are electrically connected in sequence. The power supply circuit is used for receiving an external power supply and converting the external power supply into power supply voltage required by the whole circuit system and the sensor; and the sensor power supply circuit is used for receiving the voltage output by the power supply circuit and adjusting the voltage according to the power supply requirement of the sensor so as to supply power to the sensor. The problems that a traditional pressure switch is large in size, slow in response, high in power consumption, complex in debugging and poor in adaptability are solved, and the pressure sensor has the advantages of being small in size, fast in response, low in power consumption, convenient and fast to debug and wide in adaptability and can be widely applied to semiconductor production and pressure monitoring of related industrial scenes.

In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit includes at least one electronically variable capacitor (EVC). Each EVC includes a fixed capacitor, each of the fixed capacitors having a corresponding switching circuit for switching the fixed capacitor into and out of the fixed capacitor to change the total capacitance of the EVC. Each switching circuit includes a switch including a PIN or NIP diode, a driver circuit operably coupled to the switch, a filter operably coupled between the driver circuit and the switch, and a clamp circuit operably coupled between the filter and the switch. The clamp circuit includes a blocking device having a first terminal operably coupled to a clamp power supply and a separate second terminal operably coupled to a terminal of the filter.

The utility model discloses a rear-end control type high-end ideal diode, which comprises a PMOS (P-channel Metal Oxide Semiconductor) main tube, a comparator circuit and a driving circuit, the PMOS main tube, the comparator circuit and the driving circuit form an integral circuit, and the comparator circuit comprises a PMOS auxiliary tube and a resistor. On the basis of the technical scheme of a PMOS pair transistor and a PMOS main transistor, circuit improvement is carried out, two circuits are designed, the function of preventing backflow is achieved, and a pre-stage circuit can be protected; the loss is low, and the quiescent current loss is small; the high-end load switch and the comparator are used, the circuit is simple, the cost is low, and the practicability is high.

The utility model provides a low-frequency high-power switch, which belongs to the technical field of switches and comprises a metal box body, a printed board is embedded in the metal box body, a transmission line is electroplated on one side of the outer wall of the printed board, one end of the transmission line is electrically connected with a radio frequency input end, and the other two ends of the transmission line are electrically connected with a radio frequency output end and a switch assembly. The switch assemblies are arranged on the outer wall of the printed board, the number of the switch assemblies is two, and each switch assembly comprises a first blocking capacitor, a second blocking capacitor, a third blocking capacitor, a first wire-wound magnetic core inductor, a second wire-wound magnetic core inductor, a third wire-wound magnetic core inductor, a first patch type diode and a second patch type diode. Through the switch assembly, the metal box body 1 is adopted for sealing treatment, external radiation can be shielded, the isolation degree among the paths can be improved, the parallel diodes can also improve the isolation degree among the paths, and the novel high-voltage switch further has the advantages of being easy to machine and simple in structure.

The application discloses a power transistor driving protection circuit, which comprises a low-voltage driving circuit, a power enhancement unit, a circuit protection unit, a power transistor and a power supply. The low-voltage driving circuit receives a control signal and outputs the signal, the signal enters the power enhancement unit, is amplified into a power signal with driving capacity, the power signal sequentially passes through a fuse and a resistor, and is then transmitted to the power transistor, so that the conduction, shutdown or opening degree of the power transistor in the next stage is controlled according to the signal instruction, and the circuit protection unit comprises a clamping diode and a fuse, the clamping diode performs clamping protection on the circuit voltage, and the fuse starts protection when overcurrent occurs. The circuit of the application increases a protection circuit between the output of the low-voltage side driving circuit and the transistor control pin. When the transistor fails, high voltage can be effectively avoided from entering the low-voltage circuit, the impact of high voltage on the driving related circuit is prevented, meanwhile, damage can be isolated, and associated damage is prevented.

The invention discloses a gate drive circuit with an ideal diode circuit as a bootstrap diode. The gate drive circuit comprises an input logic circuit, a high-side drive circuit HSD, the ideal diode circuit, a low-side drive circuit LSD and a power supply circuit. The input logic circuit is used for performing level shift processing on a high-side input signal HI to generate a first control signal and performing level shift processing on a low-side input signal LI to generate a second control signal; the high-side driving circuit HSD is used for generating a high-side driving signal HO according to the first control signal; the ideal diode circuit is used for bootstrap boost of the high-side driving circuit; the low-side driving circuit LSD is used for generating a low-side driving signal LO according to the second control signal; and the power supply circuit is used for providing reference voltage and reference current for each module. During high-frequency work, electric leakage to ground is small, chip power consumption is low, chip temperature is low, high-side output voltage is high when VDD voltage is low, the driving capacity is high, and a high-side power MOSFET is not prone to being burnt out.

A drive circuit of a power semiconductor element comprises a gate drive voltage generator (30) to generate, based on an ON / OFF drive timing signal input to an input terminal (11), a gate drive voltage to be applied to a gate electrode of a switching element (1) having the gate electrode for controlling a main current that flows between a first main electrode and a second main electrode, wherein the gate drive voltage generator (30) includes a gate current limiting circuit (3) in which a current limiter (17) to limit a current and a voltage limiter (56) to limit the magnitude of a voltage applied to both ends of the current limiter (17) are connected in parallel.