387results about "Diode" patented technology

An image sensor includes a first chip that includes a pixel region and a pad region, and a second chip that is in contact with one surface of the first chip and includes circuits that drive the first chip. The first chip includes a first substrate, an interlayer insulating layer disposed between the first substrate and the second chip, first interconnection lines disposed in the interlayer insulating layer, a conductive pad disposed in the pad region between the second chip and the first interconnection lines, and a recess region formed in the pad region that penetrates the first substrate and the interlayer insulating layer and exposes the conductive pad.

An apparatus and configuring scheme where a capacitive input circuit can be programmed to perform different logic functions by adjusting the switching threshold of the capacitive input circuit. Digital inputs are received by respective capacitors on first terminals of those capacitors. The second terminals of the capacitors are connected to a summing node. A pull-up and pull-down device are coupled to the summing node. The pull-up and pull-down devices are controlled separately. During a reset phase, the pull-up and / or pull-down devices are turned on or off in a sequence, and inputs to the capacitors are set to condition the voltage on node n1. As such, a threshold for the capacitive input circuit is set. After the reset phase, an evaluation phase follows. In the evaluation phase, the output of the capacitive input circuit is determined based on the inputs and the logic function configured during the reset phase.

Unidirectional hybrid switch. At least one example is a method operating a hybrid switch, the method comprising: sensing a voltage across an upper terminal and a lower terminal of the hybrid switch, the hybrid switch is forward biased when the upper terminal has higher voltage, and the hybrid switch is reverse biased when the lower terminal has higher voltage; when the hybrid switch is forward biased, selectively conducting a forward current from the upper terminal to the lower terminal by sharing the forward current between a FET switch and a BJT switch, the selectively conducting when a control terminal is asserted; and when the hybrid switch is reversed biased, non-selectively conducting a reverse current from the lower terminal to the upper terminal.

The embodiment of the invention provides a radio frequency power supply and semiconductor process equipment, and the power supply comprises a power supply voltage control sub-module which is connected with a switching power supply module and is used for controlling the DC output voltage of the switching power supply module; the radio frequency control sub-module is connected with the radio frequency module and is used for controlling the power and the frequency of the radio frequency signal output by the radio frequency module; the power sampling sub-module is used for being connected with the radio frequency module and collecting a power feedback value of a radio frequency signal output by the radio frequency module; and the processor sub-module is connected with the power supply voltage control sub-module, the radio frequency control sub-module and the power sampling sub-module, and is used for outputting a control signal to the power supply voltage control sub-module and the radio frequency control sub-module based on the power feedback value and the frequency of the radio frequency signal, so that the radio frequency module outputs the required radio frequency signal. The embodiment of the invention can improve the output efficiency of the radio frequency module.

The invention provides an intelligent electronic switch, a chip and a device integrated with a diode function, and the intelligent electronic switch is provided with a mode selection end, a substrate switching circuit and a control circuit. The substrate switching circuit comprises a first switch and a second switch, the first switch is connected between the drain end and the substrate end of the power switch, and the second switch is connected between the substrate end and the source end of the power switch. When the mode selection end receives a first signal, the first switch is controlled to be switched off, the second switch is controlled to be switched on, and the switching state of the power switch is controlled based on a switching control signal received by the input end, so that the function of a high-side switch is realized; and the switching state of the power switch is controlled according to the voltage of the power supply end and the voltage of the load output end, so that the function of the diode is realized. The intelligent electronic switch can realize high-side application and diode application at the same time, and the application range of the intelligent electronic switch is expanded.

Image sensor structures are provided. In some embodiments, an image sensor structure is provided. The image sensor structure includes a substrate and a light-sensing region formed in the substrate and extending from the top surface to the bottom surface of the substrate. The image sensor structure further includes a first isolation structure extending from the top surface of the substrate to a middle portion of the substrate and a second isolation structure formed extending from the bottom surface of the substrate to the middle portion of the substrate and in contact with the first isolation structure. The image sensor structure further includes a gate structure overlapping the light-sensing region, the first isolation structure, and the second isolation structure and a cap layer overlapping the gate structure, the light-sensing region, the first isolation structure, and the second isolation structure in a top view.

A memory structure includes insulating layers, gate layers, a first doping layer, second doping layers, third doping layers, a columnar channel, a first dielectric layer, second dielectric layers, and a third dielectric layer. The first doping layer and the columnar channel penetrate through the insulating layers and the gate layers that are alternately stacked. The second doping layers are in direct contact with the first doping layer to form tunnel diodes, in which the second doping layers and the insulating layers are alternately stacked. The third doping layers surround the columnar channel and are connected to the second doping layers. The first dielectric layer is between the first doping layer and the gate layers. The second dielectric layers are between the third doping layers and the gate layers. The third dielectric layer is between the columnar channel and the third doping layers.

A semiconductor device having first and second conductivity regimes is provided. The device comprises a substrate body, a source formed along a first sidewall of the substrate body, and a drain formed along a second sidewall of the substrate body. The device comprises first and second delta layers disposed on the substrate body and separated by a gap. The first delta layer is in contact with the source and the second delta layer is in contact with the drain. The device comprises a cap disposed over the first and second delta layers. The device has the first conductivity regime responsive to a first voltage between the drain and the source and has the second conductivity regime responsive to a second voltage between the drain and the source.

The invention discloses a bidirectional power electronic switch, a hybrid DC circuit breaker and a control method. The bidirectional power electronic switch comprises a diode bridge module, a buffer circuit, a voltage limiting circuit and an impedance adjusting circuit. The impedance adjusting circuit is connected in parallel with two ends of the diode bridge module; the buffer circuit is connected in parallel with a breaking electronic switch in the diode bridge module; the voltage limiting circuit is connected in parallel with two ends of the breaking electronic switch; the diode bridge module controls the breaking electronic switch to switch current according to a breaking instruction of the power system; when the breaking electronic switch is locked, the buffer circuit suppresses the voltage and current changes of the breaking electronic switch in the switching process, the voltage limiting circuit limits the overvoltage level of the breaking electronic switch, and the impedance adjusting circuit reduces the oscillation frequency. The impedance adjusting circuit reduces the oscillation frequency, reduces the requirement for the reverse recovery speed of the diode, reduces the stress of the diode bridge type module, and enables a conventional common diode to be not liable to be damaged.

A driving circuit that drives a switching element, the driving circuit includes: a controller that includes a first terminal connected to a gate terminal of the switching element and a second terminal connected to a source terminal of the switching element, and outputs a control signal from the first terminal to the gate terminal; a first capacitor and a first resistor connected in parallel; and a second capacitor and a second resistor connected in parallel, in which the first capacitor and the first resistor are connected in series to a first connecting wire for connecting the gate terminal and the first terminal on the gate terminal side of the first connecting wire, and in which the second capacitor and the second resistor are connected in series to the first connecting wire on the first terminal side of the first connecting wire.

The invention discloses a signal processing method for a front-end circuit and the front-end circuit, the front-end circuit comprises a plurality of operational amplifiers, a plurality of diodes, a plurality of resistors, a plurality of field effect transistors, a change-over switch and a capacitor, the in-phase end of an operational amplifier U3 in the plurality of operational amplifiers is connected with the first connecting end of the change-over switch S1 and one end of a resistor R3; the anti-phase end is connected with the cathode of the diode D1, one end of the capacitor C1, the source electrode of the field effect transistor Q3 and the anti-phase end of the operational amplifier U4, and the output end is connected with the anode of the diode D1; the in-phase end of the operational amplifier U4 is connected with the cathode of the diode D2 and one end of the resistor R4, and the output end is connected with the OUT3 end; the drain electrode of the field effect transistor Q3 is connected with one end of the resistor R5, and the positive electrode of the change-over switch S1 is connected with the IN2 end; the common end of the change-over switch S1 is connected with the IN1 end, and the second connecting end is connected with the anode of the diode D2; the cathode of the change-over switch S1, the other end of the resistor R3, the other end of the resistor R4 and the other end of the resistor R5 are grounded.

A half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.

A temperature sensor circuit, a control circuit, and a control method are provided. The temperature sensor circuit comprises a temperature sensor and a control circuit. The control circuit is coupled to the temperature sensor and comprises a current source, a sampling circuit, and a computing circuit. The current source is configured to provide a first current and a second current to the temperature sensor in different time periods. The sampling circuit is coupled to the temperature sensor and configured to obtain and store a first voltage information and a second voltage information from the temperature sensor when the first current and second current are respectively provided. The computing circuit is coupled to the sampling circuit and configured to generate a sensing result corresponding to a difference of subtracting the second voltage information from the first voltage information.

Disclosed is a cell balancing device. The cell balancing device includes a balancing switching unit in which source stages of a first switch and a second switch are connected in series in common and drain stages of the first switch and the second switch are connected in parallel to both ends of a battery cell, respectively, a latch unit interposed between the source stage of the balancing switching unit and a sensing pin of the battery cell and configured to drive a balancing switching unit by outputting a driving voltage to a gate stage of the balancing switching unit by receiving an enable signal and an inversion enable signal, and a reverse voltage protection unit interposed between the source stage of the balancing switching unit and the sensing pin of the battery cell.

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

A solid-state imaging device according to an embodiment of the present disclosure includes a mode-switching switch section that, in a first mode, electrically couples a first signal path to a photoelectric conversion section and electrically decouples a second signal path from the photoelectric conversion section, and that, in a second mode, electrically couples both of the first signal path and the second signal path to the photoelectric conversion section. At least the photoelectric conversion section is formed in a first substrate, and at least a second amplification transistor is formed in a second substrate, among the first substrate and the second substrate stacked on each other.

A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

To provide a semiconductor device in which the damage of a diode is suppressed.SOLUTION: A semiconductor device 100 includes a semiconductor substrate 10, and an ESD protection circuit 50, an internal circuit 52, an input-output terminal Ts, and power source terminals T1 and T2 on the semiconductor substrate. The ESD protection circuit includes diodes D1 and D2 and an ESD protection element 54. The diode D1 has a cathode connected to the power source terminal T1 and an anode connected to the input-output terminal. The diode D2 has a cathode connected to the input-output terminal Ts and an anode connected to the power source terminal T2. The ESD protection element is connected in parallel to the diodes D1 and D2 between the power source terminals and includes transistors F1 and F2 that are NMOSFET. A transistor F1 has a drain connected to the power source terminal T1 and a source and a gate connected together. A transistor F2 has a drain connected to the source of the transistor F1, has a source connected to the power source terminal T2, and has the source and a gate connected together.SELECTED DRAWING: Figure 1

An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view. The device includes an insulating film disposed below the optical waveguide. The insulating film has a refractive index higher than that of an interlayer insulating film. The insulating film is disposed closer to the photoelectric conversion unit than to the lowermost wiring layer among wiring layers of the multilayer wiring structure. The insulating film extends to a portion above the light shielding portion. The insulating film is wider than a lower portion of the optical waveguide.

Disclosed in the present invention is an ultrasonic electronic equipment circuit for isolating high-voltage transmission from small signal reception, which is characterized by comprising a diode bias current control circuit and a diode interconnection circuit, the diode bias current control circuit being used for controlling and regulating the current flowing through diodes in the diode interconnection circuit, and the diode interconnection circuit being used for isolating a high-voltage power output network from an input network of a small signal receiving circuit or connecting a transducer output network to the input network of the small signal receiving circuit. The present invention uses program control to enable or disenable the direct-current bias current of two diodes connected in series so as to turn off and turn on the diodes; when the direct-current bias current of the diodes are disenabled, the diodes are turned off so as to isolate a high-voltage power supply from the receiving circuit; when the direct-current bias current of the two diodes are enabled, the diodes are turned on and have very low alternating current impedance, so as to communicate an output signal of an ultrasonic transducer to the small signal receiving circuit at very low impedance.

The utility model relates to the technical field of capacitive shaft keyboards, and discloses a capacitive shaft keyboard circuit, which comprises a main control module; a voltage stabilizing module; an LED module; a keyboard plate module; and the voltage stabilizing module, the LED module and the key board module are electrically connected with the main control module. All information in the triggering process of the capacitor shaft is converted into electric signals through the tolerance controller, and the precision is as high as 0.04 mm. A user only needs to slightly press the key, and the keyboard can quickly respond and generate a trigger signal; a user is allowed to set a trigger point by himself / herself through driving, the interval can be 0.04 mm, great flexibility and individualized space are provided for the user, and the user can adjust the trigger force and stroke of the key according to own use habits and requirements, so that the input efficiency and comfort are optimized; according to the utility model, only one pin is required to have electrical performance to work, and other redundant pins can be abandoned or not adopted, so that the circuit structure is simplified, the production cost is reduced, and the reliability and stability of the circuit are improved.

The invention relates to a driver circuit for one or more power semiconductors (SD), the driver circuit comprising: at least one first switch (S1) and at least one second switch (S2), the driver circuit being connectable both to the lower switching potential and to the upper switching potential, a connection to the lower switching potential or to the upper switching potential being enabled by operation of the at least one first switch (S1) and of the at least one second switch (S2); a capacitor (Ctr) and a Zener diode (D0), the capacitor (Ctr) and the Zener diode (D0) being arranged in parallel branches, the parallel branches being connected on a first side to the connection of the switches (S1, S2), and the parallel branches being connected on a second side to the gate terminal of the power semiconductor (SD) to be driven, characterised in that the branch including the capacitor (Ctr) also comprises a resistor (RGon), and wherein in addition a protection circuit (OPT) comprising a further Zener diode and an antiserially connected diode is provided between the gate terminal (G) of the power semiconductor (SD) to be driven and the source terminal (S) of the power semiconductor (SD) to be driven.

In one embodiment, the electrical switching system (1) comprises semiconductor switches (41, 42, 43) and a control unit (3), in which-the semiconductor switches (41, 42, 43) each comprise a transistor structure (51) and a diode structure (52), which are electrically connected to each other in an anti-parallel manner,-the semiconductor switches (41, 42, 43) are arranged in a first branch (21) and a second branch (22), the first branch is a series connection of the first semiconductor switches (41, 43) and the second branch is a series connection of the second semiconductor switches (42), the first branch (21) and the second branch (22) being electrically connected in parallel, and-in the case that a defective semiconductor switch (43) of the first semiconductor switches (41, 43) is in a short-circuit failure mode,-the first semiconductor switches (41, 43) of the first semiconductor switches (41, 43) of the second semiconductor switches (42) of the second semiconductor switches (42) are electrically connected in parallel. The control unit (3) switches on the remaining operating semiconductor switches (41) of the first semiconductor switches (41, 43) during the phase of the reverse current flow direction.

An electronic device and a diode are provided. The electronic device includes a switch circuit and a diode. The switch circuit includes a transistor. The diode has a first pin and a second pin. The first pin is electrically coupled to the transistor. The second pin is an idle contact.

The utility model relates to the field of microwave test and electronic countermeasure, in particular to a microstrip frequency hopping filter circuit and device, which comprises a coupling microstrip structure, a resonant switch assembly, a matching switch assembly and a control assembly, the resonant switch assembly is connected with the coupling end of the coupling microstrip structure and is used for adjusting the working frequency; the matching switch assembly is connected with the input end or the output end of the coupling microstrip structure and is used for matching and tuning; the control assembly controls the resonance switch assembly and the matching switch assembly to carry out frequency hopping filtering. By forming a coupling structure of the microstrip lines, coupling matching of the microstrip lines in the frequency hopping filter is achieved, in-band matching is kept during frequency modulation, and good standing waves and small in-band insertion loss fluctuation are achieved. And a good Chebyshev waveform is kept in a specified frequency hopping range, and meanwhile, standing waves and in-band insertion loss are not remarkably deteriorated. And the overall size can be greatly reduced, the production process is simplified, the assembly difficulty is reduced, the performance is reliable, and the cost is low.

The invention belongs to the technical field of power electronics, and particularly relates to a solid-state direct-current circuit breaker module based on IGCTs, an upper pressing plate and a lower pressing plate are connected through a first screw rod, the number of first radiators is one more than that of the IGCTs, and the first radiators and the IGCTs are arranged in an overlapping mode; the number of the second radiators is one more than that of the first fast recovery diodes, and the second radiators and the first fast recovery diodes are arranged in an overlapping mode. First insulating cushion blocks are arranged between the first radiators and the lower pressing plate and between the second radiators and the lower pressing plate. Insulating cushion blocks II are arranged between the radiator I and the upper pressing plate as well as between the radiator II and the upper pressing plate and correspondingly abut against the radiator I and the radiator II through two force application mechanisms positioned on the inner side of the upper pressing plate; the piezoresistor is installed on the side, away from the first radiator, of the second radiator, the RCD protection unit is installed on the insulating plate, and the insulating plate is installed on the upper pressing plate and the lower pressing plate and located on one side of the first radiator and one side of the second radiator. The structure is compact, maintenance is easy, pressure is uniform, stray inductance is reduced, and overall stability and response speed are improved.

A semiconductor device includes a semiconductor substrate, a contact region, a carrier suppression region and an electrode. The semiconductor substrate is shared by an insulated gate bipolar transistor (IGBT) region with an IGBT element and a freewheeling diode (FWD) region with an FWD element. The carrier suppression region is exposed from a surface of the semiconductor substrate in the IGBT region, and has a lower impurity concentration than the contact region. The carrier suppression region has a Schottky barrier junction with the electrode.

The invention relates to a circuit comprising a self-conducting transistor, referred to as a power transistor, a further transistor, referred to as a control transistor, a further transistor, referred to as a first protection transistor, and a string, referred to as a Zener string, comprising at least one Zener diode, wherein the power transistor is coupled between a first end of the circuit and a first node of the circuit, the control transistor is coupled between the first node and a second end of the circuit, and a gate end of the control transistor is coupled to a third end of the circuit. Wherein the first protection transistor is coupled between the first node and the second terminal, and wherein the Zener string is coupled between the first terminal and a gate terminal of the first protection transistor.

The invention relates to a switch. An electronic device for driving a switch is provided. An example electronic device for driving a switch includes: a first driving circuit of a switch referenced to a first terminal adapted to receive an alternating potential, formed on a first substrate, and including a first diode whose anode is connected to the first substrate; a second driving circuit referenced by a second terminal adapted to receive a reference potential, formed on the second substrate, and including a second diode whose anode is connected to the second substrate; and the cathode of the first diode is connected to the second driving circuit, and the cathode of the second diode is connected to the first driving circuit.