120results about "Diode" patented technology

The utility model relates to the technical field of capacitive shaft keyboards, and discloses a capacitive shaft keyboard circuit, which comprises a main control module; a voltage stabilizing module; an LED module; a keyboard plate module; and the voltage stabilizing module, the LED module and the key board module are electrically connected with the main control module. All information in the triggering process of the capacitor shaft is converted into electric signals through the tolerance controller, and the precision is as high as 0.04 mm. A user only needs to slightly press the key, and the keyboard can quickly respond and generate a trigger signal; a user is allowed to set a trigger point by himself / herself through driving, the interval can be 0.04 mm, great flexibility and individualized space are provided for the user, and the user can adjust the trigger force and stroke of the key according to own use habits and requirements, so that the input efficiency and comfort are optimized; according to the utility model, only one pin is required to have electrical performance to work, and other redundant pins can be abandoned or not adopted, so that the circuit structure is simplified, the production cost is reduced, and the reliability and stability of the circuit are improved.

In one embodiment, the electrical switching system (1) comprises semiconductor switches (41, 42, 43) and a control unit (3), in which-the semiconductor switches (41, 42, 43) each comprise a transistor structure (51) and a diode structure (52), which are electrically connected to each other in an anti-parallel manner,-the semiconductor switches (41, 42, 43) are arranged in a first branch (21) and a second branch (22), the first branch is a series connection of the first semiconductor switches (41, 43) and the second branch is a series connection of the second semiconductor switches (42), the first branch (21) and the second branch (22) being electrically connected in parallel, and-in the case that a defective semiconductor switch (43) of the first semiconductor switches (41, 43) is in a short-circuit failure mode,-the first semiconductor switches (41, 43) of the first semiconductor switches (41, 43) of the second semiconductor switches (42) of the second semiconductor switches (42) are electrically connected in parallel. The control unit (3) switches on the remaining operating semiconductor switches (41) of the first semiconductor switches (41, 43) during the phase of the reverse current flow direction.

The invention belongs to the technical field of power electronics, and particularly relates to a solid-state direct-current circuit breaker module based on IGCTs, an upper pressing plate and a lower pressing plate are connected through a first screw rod, the number of first radiators is one more than that of the IGCTs, and the first radiators and the IGCTs are arranged in an overlapping mode; the number of the second radiators is one more than that of the first fast recovery diodes, and the second radiators and the first fast recovery diodes are arranged in an overlapping mode. First insulating cushion blocks are arranged between the first radiators and the lower pressing plate and between the second radiators and the lower pressing plate. Insulating cushion blocks II are arranged between the radiator I and the upper pressing plate as well as between the radiator II and the upper pressing plate and correspondingly abut against the radiator I and the radiator II through two force application mechanisms positioned on the inner side of the upper pressing plate; the piezoresistor is installed on the side, away from the first radiator, of the second radiator, the RCD protection unit is installed on the insulating plate, and the insulating plate is installed on the upper pressing plate and the lower pressing plate and located on one side of the first radiator and one side of the second radiator. The structure is compact, maintenance is easy, pressure is uniform, stray inductance is reduced, and overall stability and response speed are improved.

The invention relates to a switch. An electronic device for driving a switch is provided. An example electronic device for driving a switch includes: a first driving circuit of a switch referenced to a first terminal adapted to receive an alternating potential, formed on a first substrate, and including a first diode whose anode is connected to the first substrate; a second driving circuit referenced by a second terminal adapted to receive a reference potential, formed on the second substrate, and including a second diode whose anode is connected to the second substrate; and the cathode of the first diode is connected to the second driving circuit, and the cathode of the second diode is connected to the first driving circuit.

An ideal diode circuit comprises a transistor, a low-voltage reference module, an ultra-low-voltage power supply module and a voltage drop detection circuit, the low-voltage reference module provides three different reference voltages and bias voltages, the ultra-low-voltage power supply module adopts N charge pumps in series to step up the voltage drop of the transistor, and outputs a control voltage Vcp to supply power for the internal circuit of the ideal diode, the voltage drop detection circuit compares the voltage drop of the transistor with the three reference voltages through comparators respectively, controls the opening or closing of the charge pump of the ultra-low-voltage power supply module, and realizes adaptive variable amplification multiple step-up of the voltage drop VIN-VOUT. The ideal diode control technology provided by the application utilizes variable charge pump amplification multiple, provides adaptive adjustment of the amplified voltage, and meets the continuous and stable operation of the circuit in the working voltage range of the ideal diode.

The invention relates to an electronic device comprising: - a component having a resistance (R120) with a negative temperature coefficient, and - a temperature control means having an electrical resistance (R130) varying as a function of the temperature T such that the sum of the total resistance (R) is, on a second temperature subrange (302), greater than a setpoint temperature (305), strictly greater than the total resistance (R) at the setpoint temperature (305).

A battery switch driving circuit according to an embodiment of the present invention includes a first battery input terminal and a second battery input terminal, a converter located between the first battery input terminal and the second battery input terminal, a first switch located between the second battery input terminal and the converter and cutting off a power supply input to the second battery input terminal when the first switch is off, and a switch driving unit for turning on the first switch, the switch driving unit including a first capacitor that is charged and discharged in response to the on / off of a second switch operated by a PWM signal, and a second capacitor that is charged in response to the on / off of the second switch by a voltage charged in the first capacitor, thereby turning on the first switch.

An electronic device, comprising a component having a resistance with a negative temperature coefficient, and a temperature control means having an electrical resistance varying according to the temperature, such that the sum of the total resistance is, over a second temperature subrange greater than a setpoint temperature strictly greater than the total resistance at the setpoint temperature

The utility model discloses a kind of high-end ideal diode based on band gap reference, including high-end load switch MOS tube, voltage comparator and band gap reference voltage module, the high-end load switch MOS tube, voltage comparator and band gap reference voltage module composition integral circuit, the MOS tube is PMOS tube or NMOS tube.This circuit has the function of preventing backflow, can protect front-stage circuit;With lower loss, small static current loss;Use high-end load switch and voltage comparator, circuit is simple, cost is very low, and practicality is strong;Voltage comparator is used to compare the voltage of the voltage divider of MOS tube output end and reference voltage, band gap reference voltage source has higher precision, strong anti-interference ability, and there is no backflow current;Reduce the static loss of equipment, prolong the working time of battery, equipment maintenance cost is low, loss reduces greatly, suitable for thing networking NB-IoT ultra-low loss ideal diode circuit application, circuit is very simple and has very low cost advantage.

The invention relates to the technical field of semiconductor production and manufacturing, in particular to a switching circuit for a semiconductor miniaturized quick-response pressure switch and the pressure switch, and the switching circuit comprises a power supply circuit, a sensor power supply circuit, a signal processing circuit, a comparison circuit and an indication and output circuit which are electrically connected in sequence. The power supply circuit is used for receiving an external power supply and converting the external power supply into power supply voltage required by the whole circuit system and the sensor; and the sensor power supply circuit is used for receiving the voltage output by the power supply circuit and adjusting the voltage according to the power supply requirement of the sensor so as to supply power to the sensor. The problems that a traditional pressure switch is large in size, slow in response, high in power consumption, complex in debugging and poor in adaptability are solved, and the pressure sensor has the advantages of being small in size, fast in response, low in power consumption, convenient and fast to debug and wide in adaptability and can be widely applied to semiconductor production and pressure monitoring of related industrial scenes.

In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit includes at least one electronically variable capacitor (EVC). Each EVC includes a fixed capacitor, each of the fixed capacitors having a corresponding switching circuit for switching the fixed capacitor into and out of the fixed capacitor to change the total capacitance of the EVC. Each switching circuit includes a switch including a PIN or NIP diode, a driver circuit operably coupled to the switch, a filter operably coupled between the driver circuit and the switch, and a clamp circuit operably coupled between the filter and the switch. The clamp circuit includes a blocking device having a first terminal operably coupled to a clamp power supply and a separate second terminal operably coupled to a terminal of the filter.

The utility model discloses a rear-end control type high-end ideal diode, which comprises a PMOS (P-channel Metal Oxide Semiconductor) main tube, a comparator circuit and a driving circuit, the PMOS main tube, the comparator circuit and the driving circuit form an integral circuit, and the comparator circuit comprises a PMOS auxiliary tube and a resistor. On the basis of the technical scheme of a PMOS pair transistor and a PMOS main transistor, circuit improvement is carried out, two circuits are designed, the function of preventing backflow is achieved, and a pre-stage circuit can be protected; the loss is low, and the quiescent current loss is small; the high-end load switch and the comparator are used, the circuit is simple, the cost is low, and the practicability is high.

The application discloses a power transistor driving protection circuit, which comprises a low-voltage driving circuit, a power enhancement unit, a circuit protection unit, a power transistor and a power supply. The low-voltage driving circuit receives a control signal and outputs the signal, the signal enters the power enhancement unit, is amplified into a power signal with driving capacity, the power signal sequentially passes through a fuse and a resistor, and is then transmitted to the power transistor, so that the conduction, shutdown or opening degree of the power transistor in the next stage is controlled according to the signal instruction, and the circuit protection unit comprises a clamping diode and a fuse, the clamping diode performs clamping protection on the circuit voltage, and the fuse starts protection when overcurrent occurs. The circuit of the application increases a protection circuit between the output of the low-voltage side driving circuit and the transistor control pin. When the transistor fails, high voltage can be effectively avoided from entering the low-voltage circuit, the impact of high voltage on the driving related circuit is prevented, meanwhile, damage can be isolated, and associated damage is prevented.

The invention discloses a gate drive circuit with an ideal diode circuit as a bootstrap diode. The gate drive circuit comprises an input logic circuit, a high-side drive circuit HSD, the ideal diode circuit, a low-side drive circuit LSD and a power supply circuit. The input logic circuit is used for performing level shift processing on a high-side input signal HI to generate a first control signal and performing level shift processing on a low-side input signal LI to generate a second control signal; the high-side driving circuit HSD is used for generating a high-side driving signal HO according to the first control signal; the ideal diode circuit is used for bootstrap boost of the high-side driving circuit; the low-side driving circuit LSD is used for generating a low-side driving signal LO according to the second control signal; and the power supply circuit is used for providing reference voltage and reference current for each module. During high-frequency work, electric leakage to ground is small, chip power consumption is low, chip temperature is low, high-side output voltage is high when VDD voltage is low, the driving capacity is high, and a high-side power MOSFET is not prone to being burnt out.

A highly area-efficient semiconductor device is described. Such a semiconductor device (200) may be disposed within an isolation structure (245) and includes a diode coupled to the isolation structure (245). In this manner, the semiconductor device may achieve a smaller footprint by utilizing area that would otherwise be left as inactive space (or dead space). Also, the semiconductor device may include multiple fingers of doped regions (270, 275) arranged horizontally, vertically, or a combination of both. The fingers of the doped regions form diodes connected in parallel with parallelized metal lines to facilitate carrying large amounts of current. The parallelized metal lines with shortened lengths improve problems associated with parasitic resistance of the metal lines during ESD or surge events.

A method of forming a semiconductor includes bonding a first memory die to a first memory-controller die to form a first bonded assembly, bonding second memory die to a second memory-controller die to form a second bonded assembly, and bonding the first bonded assembly to the second bonded assembly to form a memory stack.

The embodiment of the invention provides a system for inhibiting positive crosstalk and negative crosstalk of a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and belongs to the technical field of power electronics. The system comprises a negative crosstalk suppression circuit which is arranged on a connection path between a grid electrode of a silicon carbide MOSFET and a source electrode of the silicon carbide MOSFET, and the negative crosstalk suppression circuit comprises a first one-way conduction element and a PNP triode. According to the invention, the applicability of the negative crosstalk suppression system can be improved.

The invention relates to a multifunctional solid state circuit breaker (SSCB) device. The SSCB has an input side and an output side, where the input side has an input terminal at a first voltage and an input terminal at a second voltage, and the output side has an output terminal at the first voltage and an output terminal at the second voltage. The SSCB comprises: a connection circuit between an input terminal and an output terminal at a first voltage, and / or a connection circuit between an input terminal and an output terminal at a second voltage; wherein the connection circuit comprises at least one semiconductor switch and a voltage clamping device Z1 connected in parallel with the at least one semiconductor switch; wherein the input terminal and the output terminal at the first voltage and the input terminal and the output terminal at the second voltage are directly connected to each other without a connection circuit. The SSCB also includes a vertical freewheeling circuit coupled between a first connection point between the input terminal and the output terminal of the first voltage and a second connection point between the input terminal and the output terminal of the second voltage, where the freewheeling circuit includes a switchable (i.e. Interruptible) freewheeling path.

A switching circuit for selectively closing or interrupting a radio frequency (RF) signal path includes a switchable element that is switchable between an on-state and an off-state. The switching circuit also includes a control circuit and a power supply circuit. The control circuit is configured to apply a control signal provided by the power supply circuit to the switchable element. The control signal includes a control voltage and / or a control current. The control circuit includes a first signal path that includes at least one first diode being configured to provide the control signal to the switchable element. The control circuit comprises a second signal path. The second signal path is arranged in parallel to the first signal path. The second signal path includes at least one second diode that is arranged with opposite polarity compared to the at least one first diode.

The buffer circuit includes an operational amplifier and a conversion boost circuit. The operational amplifier amplifies a first input voltage of a first input node to generate an output voltage of an output node. The conversion boost circuit performs a conversion boost operation of adjusting a conversion rate of the output voltage based on a difference between a voltage level of a first input voltage and a voltage level of the output voltage. The conversion boost circuit includes a diode boost circuit located between the first input node and the second input node and including at least one diode. The conversion boost circuit further includes a comparison circuit located between the second input node and the output node, and comparing a voltage level of a second input voltage of the second input node with a voltage level of the output voltage.

The invention relates to a resistor assembly (2) comprising at least one connection element (3, 3') and at least one resistor element (4). A coating (5) is applied onto at least one part (411) of the surface (41) of the resistor element (4) as a substrate or onto at least one part (311) of the surface (31) of the connection element (3, 3') as a substrate, said coating having at least one layer (50, 51, 52, 53). According to the invention, the coating (5) is designed such that a metal and a semiconductor are in direct contact at a boundary surface (61) between the substrate and the coating (5) such that a p-n transition is formed at the boundary surface (61), and / or a metal and a semiconductor or a first semiconductor and a second semiconductor are in direct contact at least at a boundary surface (62) between a first layer (50, 51) and a second layer (52) of the coating (5) such that a p-n transition is formed at the boundary surface (62). A layer (50, 51, 52, 53) of the coating (5) and an uncoated part (412, 412') of the surface (41) of the resistor element (4) or an uncoated part (312) of the surface (31) of the connection element (3, 3') or both the first layer (50, 51) as well as another layer (52, 53) of the coating (5) can be contacted in order to detect measurement signals for determining the temperature of the resistor assembly (2).

To provide a trench-type semiconductor power device having an electrostatic discharge protection structure.SOLUTION: There is provided a trench-type semiconductor power device 100_1 in which a first semiconductor layer 120 includes: a first part semiconductor layer 120_1 that is adjacent to a bulk doped region 106 and a source doped region 108, and used as a gate electrode having a first conductivity type; and a third part semiconductor layer 120_3 that extends in a second direction, that is away from the source doped region, and that includes a plurality of first doped regions 120n having the first conductivity type and a plurality of second doped regions 120p having a second conductivity type. The plurality of first doped regions and the plurality of second doped regions are arranged alternately, and serve as an electrostatic discharge protection structure ESD_P1 that forms a diode string having back-to-back diodes. A first end of the diode string is electrically connected to the gate electrode through a gate resistor Rg, and a second end of the diode string is electrically connected to the source doped region.SELECTED DRAWING: Figure 2

The invention relates to an electrical switching device (5 to 7) for connecting a potential (U0, U1, U2) to a load (8), comprising a switching element (9) having a first power connection (10), a second power connection (11) and a first control connection (12). The switching element (9) has a breakdown voltage, which can be operated up to a maximum of the breakdown voltage. The first control connection (12) is connected to a first drive circuit (13), by means of which a first control signal (S1) can be supplied to the first control connection (12) in such a way that the switching element (9) is switched on or off depending on the value of the first control signal (S1) for a current flowing from the first power connection to the second power connection (10, 11), the first control connection (12) is connected to the first power connection (10) via a first diode circuit (16). The first diode circuit (16) comprises a series circuit formed by a first diode and a second diode (17, 18). When viewed from the first power connection (10) to the first control connection (12), the first diode (17) is polarized in the on-direction and the second diode (18) is polarized in the off-direction. The second diode (18) is designed as a Zener diode and has a breakdown voltage between the operating voltage (U) of the electrical switching device (5 to 7) and the breakdown voltage of the switching element (9). The first diode (17) has a breakdown voltage higher than a breakdown voltage of the switching element (9).

The utility model relates to the technical field of power supplies, in particular to a control circuit for preventing power-on and power-off time sequence abnormity, which comprises a first power supply input end, a second power supply input end, a first power supply circuit, a second power supply circuit, a voltage limiting circuit and a main control circuit, through the voltage limiting circuit, the voltage can be quickly responded and clamped, overvoltage damage is prevented, sensitive electronic elements are protected from being influenced by transient high-voltage pulses, and therefore the safety and stability of the whole system are enhanced; meanwhile, charging and discharging control is carried out on the first power supply circuit and the second power supply circuit through the first RC delay filter circuit and the second RC delay filter circuit respectively, it is ensured that different power supplies are powered on and powered off according to a preset sequence, and the stability and reliability of the system are improved. According to the design, the overall design is simple, the number of needed elements and the layout space are reduced, the manufacturing cost is reduced, meanwhile, the functions of other circuits are not affected, and the system is more compact and efficient.

The utility model discloses a low -power consumption starting circuit of cutting off electricity of battery equipment, including battery, charging circuit, battery switch circuit, MCU micro control unit and SW1 button, the input of charging circuit is connected with the output of battery electric property, the input of battery switch circuit is connected with the output of charging circuit electric property, the power input of MCU micro control unit is connected with the output of battery switch circuit electric property, the anode end of D3 diode is connected with the PD1 end of MCU micro control unit electric property, and the output of battery is connected with the cathode end of D3 diode through SW1 button electric property electric property, the anode end of D2 diode in battery switch circuit is connected with the cathode of D3 diode electric property, and the opening and break of battery switch circuit are controlled through the press of SW1 button and MCU micro control unit, realizes the starting and power off of battery equipment.

This utility model discloses a driving circuit for a ceramic chip selector, comprising: a transformer module having a transformer input terminal and a switch signal output terminal, the transformer input terminal being connected to a power supply, and a first inductor connected between the power supply and the switch signal output terminal; a negative voltage output module having a negative voltage output terminal, the negative voltage output module including a first input capacitor, a first input diode, and a second inductor, one end of the first input capacitor being connected to the switch signal output terminal, the other end of the first input capacitor being connected to the anode of the first input diode, the cathode of the first input diode being grounded, one end of the second inductor being connected to the anode of the first input diode, and the other end of the second inductor being connected to the negative voltage output terminal; and a positive voltage output module having a positive voltage output terminal connected to the switch signal output terminal. The driving circuit for the ceramic chip selector proposed in this utility model can effectively save PCB area and cost.

To provide a chip part capable of improving mechanical strength and insulation, miniaturizing and increasing capacity, and adding an ESD protection function.SOLUTION: A chip part (1) includes: a substrate (2); a capacitor portion (32) including a plurality of wall portions (85) having a lengthwise direction and separated from each other by a trench (107) formed on a first main surface (5); and a substrate body portion (54) formed around the capacitor portion (32) using a portion of the substrates (2). The wall portions (85) are formed of a plurality of pillar units. The capacitor portion (32), in plan view, includes a first capacitor portion (321) including wall portions (85) having the lengthwise direction as first lengthwise direction (D1), and a second capacitor portion (322) including the wall portions (85) having the lengthwise direction as a second lengthwise direction (D2) intersecting with the first lengthwise direction (D1).SELECTED DRAWING: Figure 7

The utility model discloses a high-power PIN tube single-pole double-throw switch circuit, relates to the technical field of high-power PIN tube switches, aims to optimize the existing high-power PIN tube switch circuit, and comprises a PIN tube driving circuit and a switch radio frequency circuit, the input end of the PIN tube driving circuit is connected to the TTL through a NOR gate and a NOT gate OR, two kinds of gating signals are output and provided for the first branch and the second branch of the PIN tube driving circuit built by the PNP and the NPN respectively, and through switching conversion of the PNP and the NPN, one path is gated to output + 5V voltage, and the other path is gated to output-100V voltage. The two different bias voltages are loaded to the first PIN tube assembly and the second PIN tube assembly through the CT1 and the CT2, switching of the switch channels is completed, and the high-power PIN tube switch has the advantages of being high in adjustability, simple in circuit, easy to achieve, high in stability and low in cost.

The embodiment of the invention provides a protection circuit of a switch tube and a chip. The protection circuit comprises a first switch tube, a switch-on circuit and a control circuit, the input end of the first switching tube is connected with the power module and used for receiving power supply voltage output by the power module; one end of the turn-on circuit is connected with the driving chip, the other end of the turn-on circuit is connected with the control end of the first switching tube, and the turn-on circuit is used for receiving the driving voltage output by the driving chip and outputting the driving voltage to the control end of the first switching tube; the opening circuit comprises a resistance adjusting module; the control circuit is connected with the resistance adjusting module and the control end of the first switching tube and used for adjusting the resistance value of the resistance adjusting module. According to the embodiment of the invention, through the control circuit, the resistance value of the resistance adjusting module is adjusted according to the voltage between the control end and the output end of the first switch tube, due to the damping effect of the resistor, the oscillation voltage generated by the control end of the first switch tube based on the power supply voltage is inhibited, and the protection of the control end of the first switch tube is realized.