43 results about "Chalcogenide" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

This disclosure provides an optically active nanocomposite material having a textured substrate and a multilayer optical stack comprising multiple nanosheets. The nanosheets may be chiral and composed of materials such as transition metal chalcogenides, MXenes, or nanocarbon. The optically active nanocomposite material exhibits linear birefringence (LB) and linear dichroism (LD), and optionally circular dichroism (CD). The nanocomposite material also exhibits optical asymmetry. g The factor may be greater than or equal to 1. Furthermore, the nanocomposite material exhibits thermal stability, for example, remaining stable at temperatures above or equal to about 250 °C. This disclosure also provides different methods for preparing such nanocomposite materials using a layer-by-layer self-assembly (LBL) process.

The application discloses a two-dimensional material growth method based on countercurrent non-metal source supply, and belongs to the technical field of two-dimensional materials. In the preparation, a non-metal source is placed in a single-port quartz test tube and arranged downstream of a tube furnace by using countercurrent supply of a chemical vapor deposition system. After the non-metal source is gasified at high temperature, the non-metal source is diffused to the surface of a substrate by using a concentration gradient, and the flow rate of a carrier gas can be regulated to regulate the non-metal source gas phase concentration on the surface of the substrate. Compared with a conventional chemical vapor deposition method, the method solves the problems of surface "deactivation" of a metal source and substrate pollution caused by diffusion of the non-metal source to the metal source and the substrate before the growth process. The preparation method provided by the application has strong controllability, the morphology, domain size and optical quality of the obtained two-dimensional transition metal chalcogenide are uniform, and the two-dimensional transition metal chalcogenide has excellent optical and electrical properties and wide application prospect.

This invention discloses a rare-earth ion co-doped two-dimensional semiconductor material with optimized ratio, its preparation method, and its application, belonging to the field of two-dimensional materials technology. The material is a transition metal chalcogenide WS2 doped with Er. 3+ and Yb 3+ By adjusting the mass ratio of ErCl3 to YbCl3 in the precursor, the Er:Yb doping molar ratio was optimized to 1:4 while maintaining a constant total doping concentration. This invention employs salt-assisted chemical vapor deposition to grow centimeter-scale, uniformly thick WS2 (Er-Yb) monolayer films on sapphire substrates, achieving an overall rare earth doping concentration as high as 10.7 at%. Experiments confirm that when the Er:Yb doping ratio is optimized to 1:4, the Yb... 3+ As a sensitizer, it can effectively absorb photon energy and efficiently transfer it to Er. 3+ The activator significantly enhances energy transfer efficiency and inhibits concentration quenching, enabling the material to exhibit the best photoelectric properties under 635nm illumination.

Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).

This invention relates to a near-infrared detector array based on two-dimensional noble metal chalcogenides, its fabrication method, and its applications, belonging to the field of image sensor technology. First, an underpotential deposition method is used to drive noble metal atoms to self-confinedly deposit on the silicon substrate surface using the potential difference between the noble metal and the silicon substrate, obtaining a wafer-level noble metal thin film. Then, chemical vapor deposition is used to sulfide, selenize, or tellurize the wafer-level noble metal thin film, transforming it in situ into a wafer-level two-dimensional noble metal chalcogenide thin film. Finally, a near-infrared detector array is fabricated using micro-nano fabrication processes. The two-dimensional noble metal chalcogenide near-infrared detector of this invention possesses advantages such as good mechanical flexibility, high mobility, and excellent stability, significantly improving the detector's detection performance.

The invention discloses a self-powered broadband photo-detecting device and a fabricating method. According to the invention, the self-powered broadband photo-detecting device includes a substrate, a plurality of nanorods, and a plurality of nanoflake clusters. The plurality of nanorods is formed on the upper surface of the substrate. The plurality of nanorods is formed from an oxide of a metal. Each nanoflake cluster is formed on a respective top of one of the plurality of nanorods. The plurality of nanoflake clusters is formed of a chalcogenide of the metal.

This invention relates to a series of alkali metal rare earth chalcogenides and a series of alkali metal rare earth chalcogenide nonlinear optical crystals, their preparation methods, and their applications. The general chemical formula for both the series of halides and the nonlinear optical crystals is A3Ln. 11 Ga 19 Q 45 X3, where A = K, Rb, Cs; Ln = La, Pr, Nd; Q = S, Se; X = Cl, Br, I, all belong to the hexagonal crystal system with space group and cell parameter Z = 1. This series of halides is synthesized using a high-temperature solid-state method, while this series of nonlinear optical crystals is grown using a high-temperature solution method or the Bridgman process. This material can be used to manufacture second harmonic generators, up- and down-frequency converters, optical parametric oscillators, etc.

The application provides a metal-loaded transition metal oxide-transition metal chalcogenide composite material and a preparation method and application thereof, a transition metal chalcogenide nanoshell is wrapped on the surface of a transition metal oxide nanoparticle to form a core-shell structure, and metal microparticles are loaded on the surface of the transition metal chalcogenide nanoshell, the metal microparticles are single atoms, nanoclusters or nanocrystals. The composite material has double active sites of metal and chalcogen vacancies, and the nanoshell and the metal microparticles are closely combined at a molecular scale, so that the core-shell structure composite material has lower overpotential, smaller Tafel slope and impedance, larger surface active area and better durability when used as an electrocatalyst for electrocatalytic HER. The application solves the problem that pH restricts electrocatalytic HER of a transition metal chalcogenide, provides an atomic-level design strategy for preparing a high-efficiency full-pH electrocatalyst, and has important significance for promoting sustainable hydrogen production by water electrolysis.

This invention discloses a high-safety, high-energy-density chalcogenide all-solid-state battery and its preparation method, belonging to the field of all-solid-state battery technology. The battery includes a positive electrode, a chalcogenide solid electrolyte layer, and... SnF2‑In The phase change alloy thermal response layer and negative electrode have a thermal response layer thickness of <5μm, coated only on the outer periphery of the battery and the interface between adjacent batteries. Its operating initiation temperature is 50-100℃ higher than the high-temperature, high-pressure sintering temperature of 570℃. This invention achieves a 99.2% volumetric energy density retention rate by precisely defining the coating area, thickness, and temperature matching relationship of the thermal response layer. The early expansion rate of the thermal response layer after sintering is controlled at 4.8%, the probability of preventing thermal runaway chain propagation between adjacent batteries reaches 95.0%, and the thermal conductivity is reduced by 83% compared to structures without a barrier layer. While ensuring composite safety functions, it does not compromise the core commercial advantages of all-solid-state batteries, and has broad industrialization prospects.

The application relates to the field of new materials, in particular to a method for preparing a uniform multilayer molybdenum-based transition metal chalcogenide film on a liquid phase layer surface. The method specifically comprises the following steps: depositing a non-metallic element capable of forming a low-melting-point alloy phase with gold on the surface of a clean gold substrate by physical vapor deposition under an argon atmosphere; annealing the substrate treated above under certain parameters to build an alloy surface layer and use the alloy surface layer as a growth substrate; introducing a volatile sulfur source and a molybdenum source at high temperature to grow a uniform multilayer molybdenum-based transition metal chalcogenide film. The thickness of the alloy surface layer, the atmosphere and the growth temperature are adjusted to control the number of layers of the molybdenum-based transition metal chalcogenide film. The method can be used to prepare a high-quality and uniform-thickness multilayer molybdenum-based transition metal chalcogenide film, lays a foundation for the application of the molybdenum-based transition metal chalcogenide in the fields of nanoelectronic devices and photoelectric devices, and can be widely applied to the field of thin film chemical vapor deposition preparation.

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposure can be sequential or simultaneous.

The present application relates to a kind of optical fiber sensing probe based on surface-enhanced Raman scattering technology and its preparation method, belong to optical fiber sensing technical field.The optical fiber sensing probe includes optical fiber with air hole structure, ultrathin transition metal chalcogenide layer and noble metal nanometer film layer.Preparation method innovatively adds alkali metal hydroxide in transition metal chalcogenide precursor solution, fills to optical fiber air hole by negative pressure, grows uniform ultrathin layer by chemical vapor deposition;Subsequently, noble metal nanoparticles are deposited on the surface of layer using photocatalytic reduction technology.This method breaks through the technical bottleneck that a few layers of transition metal chalcogenide are difficult to grow uniformly on the surface of optical fiber, enhances the material bonding force, and avoids the problem of falling off.The ultrathin layer has excellent light transmission, which is beneficial for laser excitation and Raman signal collection, and significantly improves the detection sensitivity and uniformity.The optical fiber sensing probe of the present application is suitable for trace molecule detection in the fields of environmental monitoring, biomedical and the like.

The technology described herein is directed towards a reconfigurable intelligent surface (metasurface) design and implementation in which phase change (chalcogenide) material is (e.g., monolithically) integrated in each unit cell of the reconfigurable intelligent surface. The conductive or nonconductive states of the phase change (chalcogenide) material can be individually controlled (thermally-pulsed) per unit cell, which determines the phase of the unit cell based on the unit cell's conductive or nonconductive phase change material until subsequently pulsed, without needing continuous applied power. For example, with three phase change elements per unit cell, eight different state combinations can be controllably achieved, whereby dynamic reconfiguration of the reconfigurable intelligent surface to a given phase profile can be used to beamform a reflected beam in one shape and direction, and then to a different phase profile that changes the unit cells' states to beamform another reflected beam in another shape and / or direction.

A method of forming a chalcogenide-based thin film by atomic layer deposition may include a first cycle of forming a Ge—Se layer on a substrate by supplying a Ge precursor, a Se precursor, and a C1-C4 alcohol as a co-reactant into a reaction chamber provided with the substrate, and a second cycle of forming a Sb—Se layer on the substrate by supplying a Sb precursor, a Se precursor, and a C1-C3 alcohol, as a co-reactant into the reaction chamber. The Ge precursor may include an alkylamine group. The Se precursor may include an alkylsilyl group. The Sb precursor may include an alkoxide group. The first cycle may include p first subcycles. The second cycle may include q second subcycles. Also, p and q are each independently may be selected from integers of 1 to 10. The first cycle and the second cycle may be alternately performed multiple times.

A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.

This invention provides a method for fabricating an antimonide distributed feedback laser, comprising the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming... S6. Forming a P-type InAlAsSb waveguide layer on the P-type InAlAsSb waveguide layer; S7. Forming a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S8. Forming a P-type etch barrier layer on the P-type second InAs buffer layer; S9. Forming a P-type grating layer on the P-type etch barrier layer; S10. Forming a P-type barrier layer on the P-type grating layer; S11. Forming a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method. This invention also provides an antimonide distributed feedback laser fabricated using this method.

This application relates to chalcogenide memory device compositions. Memory cells can use a chalcogenide material having a composition as described herein as a storage material, a selector material, or as a self-selecting storage material. Chalcogenide materials as described herein can include a sulfur-containing component, which can be sulfur (S) alone or can be a combination of sulfur with one or more other elements such as selenium (Se). In addition to the sulfur-containing component, the chalcogenide material can further include one or more other elements such as germanium (Ge), at least one Group III element, or arsenic (As).

This disclosure generally relates to hydrogen enriched photovoltaic devices. In particular, the disclosure generally relates to hydrogen enriched photovoltaic devices comprising a light absorber layer of a semiconductor material, in particular chalcogenide semiconductor materials, for a thin film photovoltaic device. In addition, the present disclosure relates to methods of forming hydrogen enriched photovoltaic devices. More specifically, methods of increasing the hydrogen content of one or more layers within photovoltaic devices comprising a light absorber layer of a semiconductor material, in particular chalcogenide semiconductor materials, which may be used for a thin film photovoltaic device.

This invention discloses a low-temperature growth method and heterostructure of aluminum scandium nitride thin films based on a van der Waals buffer layer. The heterostructure, from bottom to top, comprises: a substrate; a transition metal chalcogenide (TMDC) buffer layer formed on the substrate; and an aluminum scandium nitride ferroelectric layer formed on the buffer layer. This invention utilizes a transition metal chalcogenide (TMDC) as a van der Waals buffer layer to prepare high-quality aluminum scandium nitride thin films at low temperatures via magnetron sputtering, solving the long-standing technical challenge of low-temperature, high-quality growth of aluminum scandium nitride (AlScN) thin films and integration with heterostructure substrates.

The application discloses a preparation method of monolayer chalcogenide material with in-plane porous characteristics, which uses a parent phase multilayer chalcogenide as raw material, and utilizes ion insertion and liquid phase exfoliation to prepare a water phase suspension of monolayer chalcogenide; then hydrogen peroxide solution is added into the water phase suspension of monolayer chalcogenide; after sufficient reaction, centrifugal purification is carried out to obtain a monolayer chalcogenide suspension with in-plane porous characteristics; finally, ions for causing the monolayer chalcogenide to settle are added into the monolayer chalcogenide suspension with in-plane porous characteristics, after settling, the solid is washed and dried to obtain monolayer chalcogenide powder material with in-plane porous characteristics. The method has mild reaction conditions, can quickly obtain monolayer in-plane porous chalcogenide, realizes batch production, and through simple regulation of process parameters in the preparation process, rapid and accurate regulation of the size and distribution of the in-plane pores of the chalcogenide can be realized.

Title: Method for manufacturing a phase-change memory device. The invention relates to a phase-change memory device (1) comprising a stack (100) including a memory point (200). The memory point comprises, stacked in a vertical direction (Z), a lower electrode (110), a chalcogenide section (120) disposed on the lower electrode, and an upper electrode (130) disposed on the chalcogenide section. The memory point has a lateral surface (203) and a top face (201), and includes an encapsulation layer (300) disposed in contact with the lateral surface and the top face, and a doped portion (125) extending from the lateral surface and inside the chalcogenide section, along its entire height.The chalcogenide section also has an undoped portion (126) with no or less doping than the doped portion, extending from the doped portion to the center of the chalcogenide section. Figure for the abstract: Fig. 3H.

The technology described herein relates to radio frequency components based on phase change materials (e.g., chalcogenides) that can be used in unit cells of reconfigurable intelligent surfaces. A tunable device for reconfigurable operation is described, where the phase shift of each unit cell of a reconfigurable intelligent surface is changed by rotating the conductive state of the phase change material. The angle of rotation can be selectively controlled by heating elements that change the portion of the unit cell that is in a lower resistance state relative to its higher resistance state, resulting in a phase shift of the unit cell with respect to a redirected electromagnetic wave. By arranging heating elements underneath the material and appropriately actuating each heating element to change the otherwise locked-in resistance or conductive state within the entire unit cell surface, an analog-like device operation is achieved, providing finer phase shift control for the cells of the reconfigurable intelligent surface.

This invention relates to the field of chemical analysis and detection technology, and discloses a palladium nanotip surface-enhanced Raman scattering substrate and its preparation method. The substrate comprises a substrate layer and a continuous palladium chalcogenide thin film layer on the substrate layer, wherein a portion of the palladium chalcogenide thin film layer is induced to form a nanotip structure through in-situ laser. The preparation method includes: selecting a target device substrate as the substrate layer, cleaning and drying the substrate layer; preparing a continuous palladium chalcogenide thin film layer on the substrate layer; irradiating a portion of the palladium chalcogenide thin film layer with a laser of specific parameters to induce the formation of a nanotip structure, thereby obtaining the palladium nanotip surface-enhanced Raman scattering substrate. This invention has advantages such as simple preparation process, wide compatibility with various substrate types, high detection sensitivity, and good reproducibility, and can be widely applied in trace analysis, environmental monitoring, biomedical detection, and other fields.

This invention relates to an atomic-level manufacturing method and apparatus for two-dimensional transition metal chalcogenides based on controllable micro-explosions, belonging to the field of two-dimensional semiconductor materials and atomic-level precision manufacturing technology. This invention uses energetic transition metal complexes and energetic chalcogenides as integrated metal-energy precursors. Under the constraint of an array-type nano-confined microcavity, controllable micro-explosions are synchronously triggered by nanosecond lasers. Combined with directional templates and a uniform electric field, nanosecond-level stoichiometric precision is achieved in the directional self-assembly of two-dimensional transition metal chalcogenides. This invention compresses the fabrication cycle of a single 8-inch wafer to less than 10 minutes, with overall energy consumption less than 1% of traditional CVD processes. It allows for precise control of the number of layers and crystal orientation, and the carrier mobility of the prepared material is 100% compatible with existing semiconductor production lines, making it suitable for large-scale manufacturing in fields such as advanced logic chips, photodetectors, and energy storage devices.