220 results about "Chalcogenide" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

The invention provides a low-power-consumption write-in high-thermal-stability-factor memory device and a preparation method thereof. The device comprises a substrate, a spin / orbital flow generation layer, a ferromagnetic function layer, a SiO2 layer, an electrode plate and a regulation and control layer which are sequentially arranged from bottom to top, the spin / orbital flow generation layer is made of a two-dimensional transition metal chalcogenide material TaIrTe4, the ferromagnetic functional layer is made of a two-dimensional ferromagnetic material Fe < 3 + x > GaTe2, x is equal to 0-2, and the regulation and control layer is made of a two-dimensional ferroelectric material CuVP2S6; electric fields are applied to left and right ends of the regulation layer. The vertical magnetocrystalline anisotropy of the ferromagnetic functional layer is changed by regulating and controlling the ferroelectric material CuVP2S6 through an external electric field, and the high-current writing process of the device is reduced, so that the effects of reducing the power consumption and improving the thermal stability are achieved, and the durability of the device is improved.

Myriad problems with state of the art lithium based batteries, particularly electrolyte systems thereof, including but not limited to polysulfide shuttling, formation of lithium dendrites and dead lithium during stripping and plating, thermal runaway, volumetric expansion, and strict requirements for electrolyte composition, are well documented in the art and remain major obstacles to realizing the unsurpassed potential for lithium-based batteries as ideal energy storage solutions. The inventive concepts presented herein address said challenges from a multi-pronged approach, revolutionizing the electrolyte system from different approaches to produce synergistic benefits, both within the individual approaches and particularly in combination. The inventive concepts improve electrolyte systems with respect to solvents, electron withdrawing compounds, lithium ion-transporting compounds, performance enhancing additives and chalcogenides. These developments provide benefits including: improved charge / discharge capacity, Coulombic efficiency, cycle life, sulfur optimization, oxidative stability, etc. while reducing polysulfide shuttling and lithium dendrite formation, among other benefits.

This disclosure provides an optically active nanocomposite material having a textured substrate and a multilayer optical stack comprising multiple nanosheets. The nanosheets may be chiral and composed of materials such as transition metal chalcogenides, MXenes, or nanocarbon. The optically active nanocomposite material exhibits linear birefringence (LB) and linear dichroism (LD), and optionally circular dichroism (CD). The nanocomposite material also exhibits optical asymmetry. g The factor may be greater than or equal to 1. Furthermore, the nanocomposite material exhibits thermal stability, for example, remaining stable at temperatures above or equal to about 250 °C. This disclosure also provides different methods for preparing such nanocomposite materials using a layer-by-layer self-assembly (LBL) process.

The application belongs to the technical field of chemical synthetic materials, and relates to an alkali metal ion intercalated transition metal chalcogenide compound as well as a preparation method and application thereof. x M m X n wherein A is one or more of alkali metal elements, and 0 < x < 1; M is one or more of transition metal elements, and m is 1-2; X is one or more of chalcogen elements, and n is 1-3; and the alkali metal ion intercalated transition metal chalcogenide compound is obtained by mixing and reacting an intercalation host transition metal chalcogenide compound, an intercalation guest alkali metal element-containing compound and an auxiliary metal intercalation agent.

The application provides a ternary mixed metal organotin supertetrahedral chalcogenide cluster crystal state for resin catalysts and a synthesis method and application thereof. The chalcogenide cluster compound comprises at least a core and a periphery, the core comprises metal ions, and the periphery comprises organotin; the core and the periphery form a cluster structure; and the molecular general formula of the chalcogenide cluster compound is (RSn)4M4M'2S 16 wherein R is selected from n-butyl (nBu) and / or phenyl (Ph); M is selected from In or Ga; and M' is selected from Zn, Cd, Mn and Co. The synthesis method of the application has low requirements on the purity of raw materials, simple process, and the crystal state is easy to repeat, convenient for production. The yield of the chalcogenide cluster crystal state obtained by the synthesis method of the application can reach more than 45%. The chalcogenide cluster compound of the application can be used in the fields of photoelectric catalysis and nonlinear optics.

The invention discloses an electrochemical method for regulating and controlling the phase, resistance and magnetism of a two-dimensional layered material, and belongs to the field of two-dimensional transition metal chalcogenide. The electrochemical method comprises the steps that an electrode system is provided, the electrode system comprises a working electrode and a counter electrode, the working electrode comprises a two-dimensional layered material, the chemical formula of the two-dimensional layered material is MX2, M represents a transition metal element, and X represents a group VI element where a sulfur element is located; providing an electrolyte, wherein the electrolyte is a soluble salt solution containing magnetic transition metal ions; the electrode system is placed in the electrolyte, and under the action of an external electric field, the magnetic transition metal ions are embedded and separated from the two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically regulated and controlled. According to the technology, magnetic transition metal ions are driven by an electric field to be reversibly embedded into and separated from a two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically and dynamically regulated and controlled, and the problems that the traditional external field regulation and control dimension is single, and intrinsic physical property coupling change is difficult to realize are solved. And multi-physical-property combined regulation and control is realized by adjusting an electric field, so that a basis is provided for application of the material in the fields of photoelectric devices, magnetoelectric storage, sensors and the like.

The present invention belongs to the field of nanomaterial technology, and provides a bimetallic chalcogenide composite material, and a preparation method and application thereof. The composite material of the present invention includes a two-dimensional layered carrier, and a first metal chalcogenide and a second metal chalcogenide loaded on the two-dimensional layered carrier; the two-dimensional layered carrier is a MXene material, and the MXene material is an M metallized carbon material; the first metal chalcogenide is MX2; the second metal chalcogenide is AX2; wherein M is a first metal, A is a second metal, and X is a chalcogen element. The present invention uses a two-dimensional layered carrier as a carrier to load the bimetallic chalcogenide, which can make the structure of the bimetallic chalcogenide complete; and the two-dimensional layered carrier can form a stable heterogeneous interface with the bimetallic chalcogenide, which is beneficial to the charge transfer between different components and the rapid storage of lithium ions, so that the composite material can be better applied to the field of lithium storage negative electrodes.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

Provided are a three-dimensional (3D) memory device using a self-selecting memory and / or an operation method of the 3D memory device. The 3D memory device may include a plurality of memory cells arranged in three dimensions on a substrate. Each of the plurality of memory cells may include a transistor and a self-selecting memory layer connected in series. The transistor may include a channel layer and the channel layer may be parallel to a surface of the substrate. The self-selecting memory layer may include a chalcogenide-based material having Ovonic threshold switching characteristics. The self-selecting memory layer may be configured to have a threshold voltage change according to a polarity and an intensity of an applied voltage.

The invention relates to the technical field of functional material preparation, in particular to a two-dimensional transition metal chalcogenide target material and a preparation method thereof. The method comprises the steps that high-purity tellurium and transition metal are mixed, the transition metal is high-purity tungsten or high-purity molybdenum, vacuum swing smelting is conducted at the temperature of 1100-1300 DEG C, and a cast ingot is obtained; crushing and ball-milling the cast ingot to obtain micron-sized powder: carrying out high-energy ball-milling on the micron-sized powder to obtain nano-sized powder; the nanoscale powder is subjected to heat treatment at the temperature of 150-160 DEG C, and nanopowder subjected to heat treatment is obtained; presintering the nano powder subjected to heat treatment at 300-400 DEG C, and then sintering at a high temperature of 500-750 DEG C and 20-40 MPa to obtain a target blank; and carrying out hot isostatic pressing treatment on the target blank under the conditions of 500-650 DEG C and 80-150 MPa. According to the preparation method provided by the invention, the high-quality alloy target material with high density, large size and uniform components can be obtained.

This invention discloses a superhydrophobic unsaturated transition metal chalcogenide compound, its synthesis method, and its applications. The invention involves heating chalcogenide powder to above its melting temperature to form a molten chalcogenide. This molten chalcogenide is then mixed with a reducing agent to undergo a disproportionation reaction. A strongly acidic solution containing transition metal cations is then added for aging, yielding a transition metal chalcogenide compound with a uniform porous structure, numerous surface defect sites, and a superhydrophobic surface. This transition metal chalcogenide compound exhibits good water resistance and high selective adsorption performance for nonpolar atoms and molecules, making it suitable for the removal of heavy metals or oxides from high-humidity flue gas. Furthermore, its unique porous structure and numerous catalytically active sites demonstrate good adsorption, capture, and catalytic conversion activity for oxidizing gases, making it suitable as an electroreduction catalyst.

The invention provides a two-dimensional chalcogenide, which is a crystalline material, and has a chemical formula of (NH4)2[Sn3S7]·(C4H13N3)1.41, cell parameters of a=b=13.2307(10) Å, c=19.335(2) Å, α=β=90°, and γ=120°, and space group of P63 / mmc. The invention further provides a method for preparing the two-dimensional chalcogenide and use thereof in the adsorption of iodine vapor. The two-dimensional chalcogenide of the present invention is capable of removing iodine vapor of various concentrations (as low as 400 ppm) over a wide range of temperatures (25° C.-75° C.), without desorption of iodine after standing for a long time.

A semiconductor nanoparticle, a method for producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes a template crystal including a zinc chalcogenide and is cadmium-free. The template crystal includes zinc-chalcogen bilayers stacked in a [111] direction. In high-resolution scanning transmission electron microscopy analysis, the template crystal includes a first zone, a second zone, and a mirror zone disposed between the first zone and the second zone. The mirror zone includes at least one mirror plane where a reversal occurs in the atomic arrangement direction of zinc and chalcogen elements between adjacent zinc-chalcogen bilayers. In the zinc-chalcogen bilayers of the first zone, zinc atoms and chalcogen element atoms are arranged in a first direction. In the zinc-chalcogen bilayers of the second zone, zinc atoms and chalcogen element atoms are arranged in a second direction.

This invention provides a method for preparing two-dimensional TMDs alloys using non-metallic chalcogenides. It is a modified CVD method in which a non-metallic chalcogenide containing two chalcogen elements replaces the elemental chalcogenides as the non-metallic growth source. The ratio of the two chalcogen elements in the TMDs alloy can be changed by adjusting the weight ratio of the non-metallic growth source to the metallic growth source. Adding 40 mg of WO3 and 55, 38, 26, and 15 mg of SeS2 respectively yielded WS... 0.96 Se 0.04 WS 0.65 Se 0.35 WS 0.5 Se 0.5 WS 0.27 Se 0.73 Four types of TMD alloy single crystals can be fabricated. Large-size single crystals and large-area thin films of two-dimensional TMD alloys with tunable chemical composition and uniform layer number can be prepared. This provides more options for optoelectronic devices with specific spectral responses, field-effect transistors, and flexible electronic devices.

The present application relates to the field of chemical synthetic materials and catalysis, and particularly relates to a metal-amorphous structure chalcogenide core-shell nanocrystal and a preparation method and application thereof.The preparation method comprises the following steps: (1) synthesizing Au nanorods through a seed growth method; (2) coating silver on the surface of the Au, and epitaxially growing a silver shell layer nanocrystal; and (3) sulfidizing the silver shell layer nanocrystal, and performing hydrothermal cation exchange to obtain a core-shell structure nanocrystal.In the metal-amorphous structure chalcogenide core-shell nanocrystal, the amorphous surface to a certain extent is conducive to adsorbing reaction substrates, and promotes the progress of the photocatalytic carbon dioxide reduction reaction.The metal-amorphous structure chalcogenide core-shell nanocrystal has excellent gas-solid phase photocatalytic carbon dioxide reduction performance, and can achieve good effects without a photosensitizer and a sacrificial agent.

The application provides a gold catalyst particle assisted chemical vapor deposition method for realizing controllable growth of transition metal chalcogenide heterojunction nanotubes, gold nanometer particle modified silicon wafers with adjustable and uniform distribution diameters can be obtained through magnetron sputtering of gold nanometer films and high temperature annealing treatment, and the silicon wafers are used as growth substrates. In the high temperature reaction process of the chemical vapor deposition, the ratio and evaporation rate of transition metal oxide powder, sulfur powder and selenium powder and the flow and ratio of hydrogen and argon are further precisely controlled through a single / two-temperature zone high temperature furnace, and finally controllable growth of high crystal quality transition metal chalcogenide heterojunction nanotubes can be realized. Further, by controlling the temperature of the growth substrate, the type of the evaporation precursor and the evaporation rate, the growth process of the transition metal chalcogenide nanotubes can be significantly affected, and transition metal chalcogenide heterojunction nanotubes with different structural characteristics such as composition and chirality can be obtained, that is, controllable growth and directional regulation of the physical properties of the transition metal chalcogenide heterojunction nanotubes are realized.

The invention provides a long-wave infrared laser reflector with a three-medium structure. The long-wave infrared laser reflector structurally comprises a substrate Sub, a transition layer B, a metal layer G, a medium film system C and an air layer A from bottom to top. The dielectric film system C is structurally characterized by being formed by alternately stacking one or more groups of materials with high, medium and low refractive indexes. The invention aims to realize high reflection of a long-wave infrared band. Through meticulous design, three kinds of materials with high, medium and low refractive indexes are reasonably distributed in the reflector. According to the strategy, the absorption of the reflector is effectively reduced by balancing the low absorption of the chalcogenide and the low refractive index of the fluoride, the temperature rise caused by heat absorption is remarkably reduced, and meanwhile, the reflectivity is improved. Therefore, the continuous laser damage threshold value of the reflecting mirror is greatly enhanced theoretically, and the reflecting mirror shows higher stability and tolerance when facing continuous laser irradiation.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

The invention discloses a solid-state battery and a positive electrode material thereof. The solid-state battery consists of a lithium storage positive electrode, a battery electrolyte and a lithium-rich negative electrode. Wherein the lithium-storing positive electrode comprises an embedded lithium-storing transition metal chalcogenide and a composite material of the embedded lithium-storing transition metal chalcogenide. The positive electrode material has ionic conductivity and electronic conductivity at the same time, a three-dimensional ionic and electronic conductive network structure is formed in the positive electrode, and the network structure is beneficial to intercalation and deintercalation of lithium ions. The crystal structure of the transition metal chalcogenide can be a layered structure or a SiFerel phase, and transition metal contained in the transition metal chalcogenide can be at least one of IVB, VB, VIB and VIIB group metal elements. In the lithium ion intercalation and deintercalation process, the transition metal is subjected to valence change reaction. By introducing the positive electrode material, the weight ratio of inactive substances in the battery is effectively reduced, and the energy density of the solid electrolyte is further improved.

The invention relates to a quantum cascade laser emitting a polarized TM optical mode with a wavelength between 3 and 15 µm, comprising an amplifying medium and a main waveguide. The latter includes a coupling section in contact with the amplifying medium, comprising a diffraction grating (DFB). The coupling section has a width greater than or equal to a minimum width from which an antisymmetric supermode propagating in a laser guidance structure comprising the amplifying medium and the main waveguide has a confinement factor in an active region of the amplifying medium strictly greater than those of the optical modes capable of being guided by the guidance structure. The main waveguide comprises a core based on atoms from column IVA of the periodic table of elements and a confinement subshell of SiN or a chalcogenide. (See Figure 1A for the abstract.)

Provided are a memory device and a memory apparatus including the same. The memory device includes a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first and second electrodes, having ovonic threshold switching characteristic, having a threshold voltage that changes according to a polarity of and / or a strength of an applied voltage, and including an amorphous chalcogenide-based material, and at least one intermediate layer including a crystalline chalcogenide-based material between at least one of the first and second electrodes and the memory layer. The memory device may include a first intermediate layer disposed between the first electrode and the memory layer and including a crystalline chalcogenide-based material and / or a second intermediate layer between the second electrode and the memory layer and including a crystalline chalcogenide-based material.

The invention discloses a two-dimensional metal phosphorus chalcogenide piezoelectric catalyst and preparation and application thereof.The catalyst comprises a block material and a two-dimensional nanosheet obtained through ultrasonic stripping of the block material, and the two-dimensional metal phosphorus chalcogenide piezoelectric catalyst has a piezoelectric effect, can capture environmental mechanical energy such as water flow, ultrasonic waves and wind energy and drives a piezoelectric catalytic reaction to convert nitrate into ammonia. The material is prepared by combining vacuum chemical vapor transport with an ultrasonic stripping method, and the material with high quality and good stability can be synthesized in batches. During application, the catalyst is dispersed in water or integrated into a film, and nitrate pollutants in sewage can be efficiently converted and ammonia is synchronously generated under the action of mechanical energy such as ultrasound, stirring or water flow fluctuation. The process is simple and reliable, and a feasible new technical path is provided for realizing nitrate pollution abatement and green synthesis of ammonia.

A method of forming a bismuth chalcogenide film is disclosed including the steps of (a) forming at least one bismuth (Bi) elemental layer on a substrate, (b) forming at least one selenium (Se) or tellurium (Te) elemental layer on the substrate, and (c) after steps (a) and (b), heating the substrate to form a bismuth chalcogenide film.

The application discloses a two-dimensional material growth method based on countercurrent non-metal source supply, and belongs to the technical field of two-dimensional materials. In the preparation, a non-metal source is placed in a single-port quartz test tube and arranged downstream of a tube furnace by using countercurrent supply of a chemical vapor deposition system. After the non-metal source is gasified at high temperature, the non-metal source is diffused to the surface of a substrate by using a concentration gradient, and the flow rate of a carrier gas can be regulated to regulate the non-metal source gas phase concentration on the surface of the substrate. Compared with a conventional chemical vapor deposition method, the method solves the problems of surface "deactivation" of a metal source and substrate pollution caused by diffusion of the non-metal source to the metal source and the substrate before the growth process. The preparation method provided by the application has strong controllability, the morphology, domain size and optical quality of the obtained two-dimensional transition metal chalcogenide are uniform, and the two-dimensional transition metal chalcogenide has excellent optical and electrical properties and wide application prospect.

This invention discloses a rare-earth ion co-doped two-dimensional semiconductor material with optimized ratio, its preparation method, and its application, belonging to the field of two-dimensional materials technology. The material is a transition metal chalcogenide WS2 doped with Er. 3+ and Yb 3+ By adjusting the mass ratio of ErCl3 to YbCl3 in the precursor, the Er:Yb doping molar ratio was optimized to 1:4 while maintaining a constant total doping concentration. This invention employs salt-assisted chemical vapor deposition to grow centimeter-scale, uniformly thick WS2 (Er-Yb) monolayer films on sapphire substrates, achieving an overall rare earth doping concentration as high as 10.7 at%. Experiments confirm that when the Er:Yb doping ratio is optimized to 1:4, the Yb... 3+ As a sensitizer, it can effectively absorb photon energy and efficiently transfer it to Er. 3+ The activator significantly enhances energy transfer efficiency and inhibits concentration quenching, enabling the material to exhibit the best photoelectric properties under 635nm illumination.

The invention discloses a method for maskless growth of a transition metal chalcogenide array. The method comprises the following steps: dissolving transition metal salt and alkali in water to form a precursor solution; hydrophobic modification is carried out on a substrate through OTS, and then a hydrophilic array is formed through etching of a laser marking machine; spin-coating the precursor solution on a substrate to realize region limited distribution of a precursor; placing the precursor in a tubular furnace constant-temperature area, placing chalcogenide powder in the gas inlet end of the tubular furnace, vacuumizing the tubular furnace, introducing protective gas, starting heating, sublimating the chalcogenide powder, enabling the chalcogenide powder to enter the tubular furnace constant-temperature area, and carrying out reaction annealing on the chalcogenide powder and the precursor in the hydrophilic array area to obtain the transition metal chalcogenide array. According to the method, a maskless growth method is adopted, oriented growth of the TMDs array is achieved by regulating and controlling the hydrophilic and hydrophobic properties of the surface of the substrate and the synergistic effect of CVD parameters, the defects in the prior art can be effectively overcome, and the method is high in crystallinity, few in defect, high in position control precision, high in device compatibility, simple and convenient in process and low in cost.

The present invention provides a sealing layer for semiconductor devices, particularly semiconductor devices containing chalcogenide materials, and a method for manufacturing the same. [Solution] The method for manufacturing a semiconductor device includes providing a substrate 18 having an exposed surface containing a chalcogenide material, and forming low-χ metal oxide layers 46A and 52A on the chalcogenide material by periodically exposing the substrate to an oxygen precursor containing a low-electronegativity (low-χ) metal precursor and O2. The electronegativity of the low-χ metal of the metal precursor is 1.6 or less.