334 results about "Chalcogenide" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention relates to the technical field of water electrolysis hydrogen production, in particular to a self-supporting hollow carbon membrane electrode and a preparation method and application thereof.The preparation method comprises the following steps that a self-supporting hollow carbon nanofiber membrane with metal M and metal M compound heterojunction is prepared through a coaxial electrostatic spinning technology; the self-supporting electrode with a high specific surface area and a rapid mass transfer channel is formed by regulating and controlling the flow rate of the spinning solution of the outer layer and the inner layer and a high-temperature carbonization process, the metal M is selected from one of iron, cobalt, nickel, manganese and molybdenum, and the metal M compound is one of oxide, hydroxide, carbide, nitride, phosphide and chalcogenide. Compared with the prior art, the self-supporting hollow carbon membrane electrode disclosed by the invention has good mechanical stability, good hydrophilic and hydrophobic properties and excellent HER and OER bifunctional catalytic activity, and can be used for efficiently and completely decomposing water.

The technology described herein is directed towards a design and implementation of a unit cell for a reconfigurable intelligent surface / reflectarray by incorporating reconfigurability within a phase-delay element of the unit cell. Reconfigurability is directly incorporated into the unit cell via a variable length phase delay line element and PCM-based (e.g., mmWave) phase shifter that determines the unit cell's phase shift by changing the length of the phase delay line element. One implementation is directed to a monolithic integration of the element using chalcogenide materials as switch elements with pulsed actuation to switch among different available lengths that determine the length of the phase delay line element, resulting in a significant reduction in power consumption, area saving, and digital reconfigurability.

The invention discloses a wide-spectrum electromagnetic wave modulation method based on silver-based chalcogenide, and belongs to the technical field of electromagnetic wave modulation. According to the invention, the abrupt-change modulation of 1GHz-300THz wide-spectrum electromagnetic waves is realized based on the electronic phase change characteristic of the metal insulator under the triggering of the silver-based chalcogenide under the characteristic external field, and the resonant structure design is combined, so that the functions and applications of electromagnetic wave switching, electromagnetic wave intelligent shielding, dynamic information communication encryption, multi-spectrum camouflage and passive electromagnetic wave protection are realized. The main conception is that a silver-based chalcogenide material with an electronic phase change characteristic is introduced as a sensitive medium, and mutation of electromagnetic wave optical characteristics covering microwave, terahertz and infrared frequency bands caused by electronic phase change of the silver-based chalcogenide is triggered by utilizing characteristic temperature, characteristic pressure and characteristic current. According to the invention, the technical barrier of wide spectrum response and multi-mode dynamic modulation is broken through, and the modulation effect can be cooperatively regulated and controlled by the components of the silver-based chalcogenide material and the structure of the resonant array.

The invention relates to the technical field of photoelectric detection devices, and discloses a photoelectric detector and a preparation method thereof, the photoelectric detector comprises a heterojunction, and the heterojunction comprises a first layer, a second layer and a third layer which are stacked; the first layer is made of a transition metal chalcogenide; the second layer is made of graphene; the third layer is made of two-dimensional semiconductor materials, and energy band structures of the three materials are arranged in a step shape. The invention further provides a preparation method of the photoelectric detector, according to the photoelectric detector and the preparation method thereof, the photo-generated carrier dynamic process of a two-dimensional material heterojunction interface is regulated and controlled through the design of a three-layer heterojunction structure, the electric transport characteristic of the photoelectric detector is optimized, and then the response speed of the device is increased.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

The invention relates to the technical field of lithium ion batteries, and particularly discloses an antimony chalcogenide coated lithium cobalt oxide positive electrode material and a preparation method and application thereof.The preparation method comprises the steps that lithium cobalt oxide powder is mixed with an antimony-containing compound, a sulfur-containing compound and a selenium-containing compound in deionized water, and a uniformly-dispersed precursor solution is formed; the molar ratio of the lithium cobalt oxide powder to the compound containing antimony, sulfur and selenium is 1: (0.01-1): (0.01-3): (0.001-2); drying the precursor solution to obtain solid powder; and calcining the solid powder at 100-500 DEG C in a protective atmosphere to finally obtain the antimony chalcogenide coated lithium cobalt oxide positive electrode material. According to the preparation method of the antimony chalcogenide-coated lithium cobalt oxide positive electrode material, the prepared antimony chalcogenide-coated lithium cobalt oxide positive electrode material has good structural stability, and when the antimony chalcogenide-coated lithium cobalt oxide positive electrode material is used in a lithium ion battery, the specific capacity of the lithium cobalt oxide battery under high voltage can be remarkably improved, and the cycle life of the lithium cobalt oxide battery under high voltage can be remarkably prolonged.

Embodiments of this application provide a laser beam machining method targeted at chalcogenide materials and an integrated photonic device, relating to the technical fields of integrated photonic chip machining. The laser beam machining method targeted at chalcogenide materials includes: acquiring a dielectric substrate with a preset size, and cleaning the dielectric substrate; preparing a uniform and dense sulfide film on a surface of the dielectric substrate; obtaining a laser spot with a preset energy distribution pattern according to a preset machining pattern; generating laser spot scanning parameters according to the preset machining pattern; and carrying out etching-free laser oxidation machining on the sulfide film through the laser spot according to the spot scanning parameters to obtain a chalcogenide integrated photonic device. The laser beam machining method targeted at chalcogenide materials can significantly simplify the machining flow of integrated photonic chips and improve the machining efficiency of photonic chips.

An optically active nanocomposite material is provided that may have a textured substrate and a multilayer optic stack with a plurality of layers comprising nanoplatelets. The nanoplatelets may be achiral and formed of a material such as transition metal chalcogenides, Mxenes, or nanocarbons. The optically active nanocomposite material displays both linear birefringence (LB) and linear dichroism (LD) and optional circular dichroism (CD). The nanocomposite may have an optical asymmetry g-factor of greater than or equal to about 1. Further, the nanocomposite is thermally stable, for example, to a temperature of greater than or equal to about 250° C. Different methods of fabricating such nanocomposites using layer-by-layer (LBL) processes are also provided.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

The invention provides a low-power-consumption write-in high-thermal-stability-factor memory device and a preparation method thereof. The device comprises a substrate, a spin / orbital flow generation layer, a ferromagnetic function layer, a SiO2 layer, an electrode plate and a regulation and control layer which are sequentially arranged from bottom to top, the spin / orbital flow generation layer is made of a two-dimensional transition metal chalcogenide material TaIrTe4, the ferromagnetic functional layer is made of a two-dimensional ferromagnetic material Fe < 3 + x > GaTe2, x is equal to 0-2, and the regulation and control layer is made of a two-dimensional ferroelectric material CuVP2S6; electric fields are applied to left and right ends of the regulation layer. The vertical magnetocrystalline anisotropy of the ferromagnetic functional layer is changed by regulating and controlling the ferroelectric material CuVP2S6 through an external electric field, and the high-current writing process of the device is reduced, so that the effects of reducing the power consumption and improving the thermal stability are achieved, and the durability of the device is improved.

Myriad problems with state of the art lithium based batteries, particularly electrolyte systems thereof, including but not limited to polysulfide shuttling, formation of lithium dendrites and dead lithium during stripping and plating, thermal runaway, volumetric expansion, and strict requirements for electrolyte composition, are well documented in the art and remain major obstacles to realizing the unsurpassed potential for lithium-based batteries as ideal energy storage solutions. The inventive concepts presented herein address said challenges from a multi-pronged approach, revolutionizing the electrolyte system from different approaches to produce synergistic benefits, both within the individual approaches and particularly in combination. The inventive concepts improve electrolyte systems with respect to solvents, electron withdrawing compounds, lithium ion-transporting compounds, performance enhancing additives and chalcogenides. These developments provide benefits including: improved charge / discharge capacity, Coulombic efficiency, cycle life, sulfur optimization, oxidative stability, etc. while reducing polysulfide shuttling and lithium dendrite formation, among other benefits.

Myriad problems with state of the art lithium based batteries, particularly electrolyte systems thereof, including but not limited to polysulfide shuttling, formation of lithium dendrites and dead lithium during stripping and plating, thermal runaway, volumetric expansion, and strict requirements for electrolyte composition, are well documented in the art and remain major obstacles to realizing the unsurpassed potential for lithium-based batteries as ideal energy storage solutions. The inventive concepts presented herein address said challenges from a multi-pronged approach, revolutionizing the electrolyte system from different approaches to produce synergistic benefits, both within the individual approaches and particularly in combination. The inventive concepts improve electrolyte systems with respect to solvents, electron withdrawing compounds, lithium ion-transporting compounds, performance enhancing additives and chalcogenides. These developments provide benefits including: improved charge / discharge capacity, Coulombic efficiency, cycle life, sulfur optimization, oxidative stability, etc. while reducing polysulfide shuttling and lithium dendrite formation, among other benefits.

The invention discloses a preparation and application method of a super-lubricating coating based on a two-dimensional material. According to the invention, the charge density wave dynamic regulation and control mechanism of the fluorinated graphene and transition metal chalcogenide heterostructure is combined with the stress buffer characteristic of boron nitride, so that a slip interface with a low shear barrier is constructed on the atomic scale, and the energy dissipation in the friction process is remarkably reduced. A three-dimensional interpenetrating network of the helical carbon nanotubes and the hyperbranched polymer not only effectively inhibits stacking of two-dimensional materials, but also forms a multi-dimensional damage repair mechanism through solid-liquid phase change self-adaptive filling of the liquid metal and a boundary lubrication effect of the nano-diamond. Through the synergistic effect of the material system, the coating keeps the ultralow friction characteristic under the wide-range working condition, meanwhile, the coating has the composite protection capacity of abrasion resistance, high temperature resistance and corrosion resistance, and the intrinsic lubrication characteristic of the two-dimensional material is reserved while the compactness of the coating is guaranteed through the gradient cross-linking technology of ultraviolet curing and heat treatment.

The invention relates to a transmission electron microscope sample preparation method of a transition metal chalcogenide layered material, which comprises the following steps: grinding a transition metal chalcogenide block, and selecting a slice in the transition metal chalcogenide block; placing the sheet on an adhesive tape, repeatedly folding and bonding for many times, tearing the adhesive tape for stripping, attaching the adhesive tape obtained after stripping to a transfer substrate, gently applying force to enable the surface of the adhesive tape to be tightly attached to the transfer substrate, and then tearing off the adhesive tape from the transfer substrate to obtain a substrate attached with a stripping thin layer; immersing the substrate in an infiltration solvent, carrying out ultrasonic treatment, and separating a transfer substrate and a stripping thin layer of the substrate; and taking out the transfer substrate in the infiltration solvent, immersing the electron microscope grid on the infiltration solvent liquid film on the surface of the transfer substrate, moving the electron microscope grid to enable the stripping thin layer to be carried on the electron microscope grid, drying, and waiting for observation of the transmission electron microscope. Compared with the prior art, the method is easy and convenient to operate, low in cost and free of additional instruments, and the large-area few-layer thin-area sample can be obtained.

The invention provides a two-dimensional transition metal chalcogenide (TMDs) synthesis method based on a co-sputtering technology, and aims to solve the bottlenecks in the aspects of low-temperature controllable synthesis, wafer-level uniformity, accurate layer number regulation and control and industrial expandability in the prior art. The method comprises the following steps: heating a transition metal compound to a reaction temperature, and carrying out co-sputtering reaction in an inert gas environment by taking an X element (Te, Se) and an M element (Pd, Pt, Bi, Mo, W, Ti) simple substance as target materials to realize low-temperature (llt; and wafer-level uniform growth of the high-purity TMDs thin film at 400 DEG C is realized. The number of layers and the stoichiometric ratio of the product can be accurately controlled by regulating and controlling the target material combination and sputtering parameters, the flexible substrate and the rigid substrate are compatible, and the subsequent transfer process is simplified. In addition, the method is simple in reaction condition, has industrial application potential, and is suitable for the fields of semiconductor devices, photoelectric devices, energy storage and the like.

Systems and methods that utilize a separator coated by particles for Li dendrite detection in an ordinary two-electrode battery system. The particles can be red phosphorus (RP) particles and / or other particles that are poor electronic conductors, are able to react with Li, and will form an insoluble product with Li, such as silicon, germanium, arsenic, metal oxides, metal halides, metal chalcogenides, chalcogenides, and LiMxEyOz (M=metal, E=nonmetal, O=oxygen, x≥0, y≥0, z≥0). These other particles can be used by themselves or in combination with one another. No additional electrode is needed, and the presence of Li dendrites can be detected simply based on the voltage profile during the charging step.

This disclosure provides an optically active nanocomposite material having a textured substrate and a multilayer optical stack comprising multiple nanosheets. The nanosheets may be chiral and composed of materials such as transition metal chalcogenides, MXenes, or nanocarbon. The optically active nanocomposite material exhibits linear birefringence (LB) and linear dichroism (LD), and optionally circular dichroism (CD). The nanocomposite material also exhibits optical asymmetry. g The factor may be greater than or equal to 1. Furthermore, the nanocomposite material exhibits thermal stability, for example, remaining stable at temperatures above or equal to about 250 °C. This disclosure also provides different methods for preparing such nanocomposite materials using a layer-by-layer self-assembly (LBL) process.

The application belongs to the technical field of chemical synthetic materials, and relates to an alkali metal ion intercalated transition metal chalcogenide compound as well as a preparation method and application thereof. x M m X n wherein A is one or more of alkali metal elements, and 0 < x < 1; M is one or more of transition metal elements, and m is 1-2; X is one or more of chalcogen elements, and n is 1-3; and the alkali metal ion intercalated transition metal chalcogenide compound is obtained by mixing and reacting an intercalation host transition metal chalcogenide compound, an intercalation guest alkali metal element-containing compound and an auxiliary metal intercalation agent.

The application provides a ternary mixed metal organotin supertetrahedral chalcogenide cluster crystal state for resin catalysts and a synthesis method and application thereof. The chalcogenide cluster compound comprises at least a core and a periphery, the core comprises metal ions, and the periphery comprises organotin; the core and the periphery form a cluster structure; and the molecular general formula of the chalcogenide cluster compound is (RSn)4M4M'2S 16 wherein R is selected from n-butyl (nBu) and / or phenyl (Ph); M is selected from In or Ga; and M' is selected from Zn, Cd, Mn and Co. The synthesis method of the application has low requirements on the purity of raw materials, simple process, and the crystal state is easy to repeat, convenient for production. The yield of the chalcogenide cluster crystal state obtained by the synthesis method of the application can reach more than 45%. The chalcogenide cluster compound of the application can be used in the fields of photoelectric catalysis and nonlinear optics.

The invention discloses an electrochemical method for regulating and controlling the phase, resistance and magnetism of a two-dimensional layered material, and belongs to the field of two-dimensional transition metal chalcogenide. The electrochemical method comprises the steps that an electrode system is provided, the electrode system comprises a working electrode and a counter electrode, the working electrode comprises a two-dimensional layered material, the chemical formula of the two-dimensional layered material is MX2, M represents a transition metal element, and X represents a group VI element where a sulfur element is located; providing an electrolyte, wherein the electrolyte is a soluble salt solution containing magnetic transition metal ions; the electrode system is placed in the electrolyte, and under the action of an external electric field, the magnetic transition metal ions are embedded and separated from the two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically regulated and controlled. According to the technology, magnetic transition metal ions are driven by an electric field to be reversibly embedded into and separated from a two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically and dynamically regulated and controlled, and the problems that the traditional external field regulation and control dimension is single, and intrinsic physical property coupling change is difficult to realize are solved. And multi-physical-property combined regulation and control is realized by adjusting an electric field, so that a basis is provided for application of the material in the fields of photoelectric devices, magnetoelectric storage, sensors and the like.

The present invention belongs to the field of nanomaterial technology, and provides a bimetallic chalcogenide composite material, and a preparation method and application thereof. The composite material of the present invention includes a two-dimensional layered carrier, and a first metal chalcogenide and a second metal chalcogenide loaded on the two-dimensional layered carrier; the two-dimensional layered carrier is a MXene material, and the MXene material is an M metallized carbon material; the first metal chalcogenide is MX2; the second metal chalcogenide is AX2; wherein M is a first metal, A is a second metal, and X is a chalcogen element. The present invention uses a two-dimensional layered carrier as a carrier to load the bimetallic chalcogenide, which can make the structure of the bimetallic chalcogenide complete; and the two-dimensional layered carrier can form a stable heterogeneous interface with the bimetallic chalcogenide, which is beneficial to the charge transfer between different components and the rapid storage of lithium ions, so that the composite material can be better applied to the field of lithium storage negative electrodes.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

Provided are a three-dimensional (3D) memory device using a self-selecting memory and / or an operation method of the 3D memory device. The 3D memory device may include a plurality of memory cells arranged in three dimensions on a substrate. Each of the plurality of memory cells may include a transistor and a self-selecting memory layer connected in series. The transistor may include a channel layer and the channel layer may be parallel to a surface of the substrate. The self-selecting memory layer may include a chalcogenide-based material having Ovonic threshold switching characteristics. The self-selecting memory layer may be configured to have a threshold voltage change according to a polarity and an intensity of an applied voltage.

The invention relates to the technical field of functional material preparation, in particular to a two-dimensional transition metal chalcogenide target material and a preparation method thereof. The method comprises the steps that high-purity tellurium and transition metal are mixed, the transition metal is high-purity tungsten or high-purity molybdenum, vacuum swing smelting is conducted at the temperature of 1100-1300 DEG C, and a cast ingot is obtained; crushing and ball-milling the cast ingot to obtain micron-sized powder: carrying out high-energy ball-milling on the micron-sized powder to obtain nano-sized powder; the nanoscale powder is subjected to heat treatment at the temperature of 150-160 DEG C, and nanopowder subjected to heat treatment is obtained; presintering the nano powder subjected to heat treatment at 300-400 DEG C, and then sintering at a high temperature of 500-750 DEG C and 20-40 MPa to obtain a target blank; and carrying out hot isostatic pressing treatment on the target blank under the conditions of 500-650 DEG C and 80-150 MPa. According to the preparation method provided by the invention, the high-quality alloy target material with high density, large size and uniform components can be obtained.

This invention discloses a superhydrophobic unsaturated transition metal chalcogenide compound, its synthesis method, and its applications. The invention involves heating chalcogenide powder to above its melting temperature to form a molten chalcogenide. This molten chalcogenide is then mixed with a reducing agent to undergo a disproportionation reaction. A strongly acidic solution containing transition metal cations is then added for aging, yielding a transition metal chalcogenide compound with a uniform porous structure, numerous surface defect sites, and a superhydrophobic surface. This transition metal chalcogenide compound exhibits good water resistance and high selective adsorption performance for nonpolar atoms and molecules, making it suitable for the removal of heavy metals or oxides from high-humidity flue gas. Furthermore, its unique porous structure and numerous catalytically active sites demonstrate good adsorption, capture, and catalytic conversion activity for oxidizing gases, making it suitable as an electroreduction catalyst.

The invention relates to a high-valence metal organic salt and metal inorganic compound composite electrolyte additive, an electrolyte containing the additive and application, and belongs to the technical field of battery materials. According to the invention, the organic salt with high-valence metal cations and the inorganic halide / chalcogenide are introduced into the conventional electrolyte at the same time, so that the defects of an electrode / electrolyte interface layer can be dynamically repaired. Anions in the high-valence metal organic salt are organic ions capable of generating auto-polymerization or electrochemical polymerization, and high-valence metal cations have oxidability, can promote auto-polymerization or electrochemical polymerization of the organic anions and / or the electrolyte solvent, and can be reduced by a metal negative electrode with strong reducing capacity. Meanwhile, inorganic halide / chalcogenide (such as ZnCl2, ZnI2, MgS2 and the like) can induce formation of a passivation layer on the surface of the negative electrode, the deposition and dissolution behaviors of sodium ions on the surface of the electrode are optimized, dendritic crystal growth is prevented, and corrosion of electrolyte and polysulfide is prevented. The composite electrolyte additive meets the multi-scene requirements of power batteries, energy storage batteries and the like.

The invention provides a two-dimensional chalcogenide, which is a crystalline material, and has a chemical formula of (NH4)2[Sn3S7]·(C4H13N3)1.41, cell parameters of a=b=13.2307(10) Å, c=19.335(2) Å, α=β=90°, and γ=120°, and space group of P63 / mmc. The invention further provides a method for preparing the two-dimensional chalcogenide and use thereof in the adsorption of iodine vapor. The two-dimensional chalcogenide of the present invention is capable of removing iodine vapor of various concentrations (as low as 400 ppm) over a wide range of temperatures (25° C.-75° C.), without desorption of iodine after standing for a long time.

A semiconductor nanoparticle, a method for producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes a template crystal including a zinc chalcogenide and is cadmium-free. The template crystal includes zinc-chalcogen bilayers stacked in a [111] direction. In high-resolution scanning transmission electron microscopy analysis, the template crystal includes a first zone, a second zone, and a mirror zone disposed between the first zone and the second zone. The mirror zone includes at least one mirror plane where a reversal occurs in the atomic arrangement direction of zinc and chalcogen elements between adjacent zinc-chalcogen bilayers. In the zinc-chalcogen bilayers of the first zone, zinc atoms and chalcogen element atoms are arranged in a first direction. In the zinc-chalcogen bilayers of the second zone, zinc atoms and chalcogen element atoms are arranged in a second direction.