410 results about "Chalcogenide" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

Disclosed are a chalcogenide-based memory material, and a memory device and an electronic device including the same. The chalcogenide-based memory material may include a ternary semiconductor compound having a composition represented by XaY 'bSec, where the chalcogenide-based memory material may have bidirectional threshold switching (OTS) characteristics, and a threshold voltage of the chalcogenide-based memory material may vary according to polarity and intensity of an applied voltage. In XaY 'bSec, X is not equal to Y, a + b + c = 1, egt, 0.12, bgt, 0.18, c > = 0.4, and X and Y' may independently be different ones of In, Sb, Ga, Sn, Al, Ge, Si, and P. The memory device may include the chalcogenide-based memory material, and the electronic device may include the memory device.

The invention relates to the technical field of water electrolysis hydrogen production, in particular to a self-supporting hollow carbon membrane electrode and a preparation method and application thereof.The preparation method comprises the following steps that a self-supporting hollow carbon nanofiber membrane with metal M and metal M compound heterojunction is prepared through a coaxial electrostatic spinning technology; the self-supporting electrode with a high specific surface area and a rapid mass transfer channel is formed by regulating and controlling the flow rate of the spinning solution of the outer layer and the inner layer and a high-temperature carbonization process, the metal M is selected from one of iron, cobalt, nickel, manganese and molybdenum, and the metal M compound is one of oxide, hydroxide, carbide, nitride, phosphide and chalcogenide. Compared with the prior art, the self-supporting hollow carbon membrane electrode disclosed by the invention has good mechanical stability, good hydrophilic and hydrophobic properties and excellent HER and OER bifunctional catalytic activity, and can be used for efficiently and completely decomposing water.

The technology described herein is directed towards a design and implementation of a unit cell for a reconfigurable intelligent surface / reflectarray by incorporating reconfigurability within a phase-delay element of the unit cell. Reconfigurability is directly incorporated into the unit cell via a variable length phase delay line element and PCM-based (e.g., mmWave) phase shifter that determines the unit cell's phase shift by changing the length of the phase delay line element. One implementation is directed to a monolithic integration of the element using chalcogenide materials as switch elements with pulsed actuation to switch among different available lengths that determine the length of the phase delay line element, resulting in a significant reduction in power consumption, area saving, and digital reconfigurability.

The present disclosure relates to an electrochemical device for extracting copper from copper-containing wastewater and an extraction method using the same. Cu-based chalcogenide, as an electrode material, forms an electrochemical device with other electrodes. The device is an electrocatalytic coupling deionization system with electrochemical oxidative decomplexing performance, and has a good selective removal effect of Cu2+ from organic complex copper-containing wastewater, strongly acidic wastewater, and wastewater interfered by high concentration salt ions and heavy metal ions. With this device, the organic complex pollutant Cu-EDTAn can be effectively decomplexed to complete the extraction of Cu2+.

The invention relates to the technical field of heavy metal wastewater treatment, in particular to an electrochemical device and an extraction method for extracting copper from copper-containing wastewater, an anode material of the electrochemical device is one of activated carbon, graphite, lead dioxide, BDD and CumX1-a-bYaZb, a cathode material of the electrochemical device is one of CunX1-c-dYcZd and a carbon-selenium compound, and after a cathode and an anode are connected with a power supply, the copper is extracted from the copper-containing wastewater. The device is used for treating copper-containing wastewater. Wherein 1 < m < = 2, 1 < = n < 2, and m > n; 0 < = a < = 1, 0 < = b < = 1, and 0 < = a + b < = 1; 0 < = c < = 1, 0 < = d < = 1, and 0 < = c + d < = 1; x, Y and Z are selected from one of S, Se and Te. The copper-based chalcogenide is used as an electrode material and forms an electrochemical device with other electrodes, the device is an electro-catalysis coupling deionization system with electrochemical oxidation complex breaking performance, and the selective removal effect on Cu < 2 + > in organic complex copper-containing wastewater, strong acid wastewater and wastewater interfered by high-concentration salt ions and heavy metal ions is good; by means of the device, the complexing breaking effect on an organic complexing pollutant Cu-EDTA can be effectively achieved, and then Cu < 2 + > extraction is completed.

The invention discloses a wide-spectrum electromagnetic wave modulation method based on silver-based chalcogenide, and belongs to the technical field of electromagnetic wave modulation. According to the invention, the abrupt-change modulation of 1GHz-300THz wide-spectrum electromagnetic waves is realized based on the electronic phase change characteristic of the metal insulator under the triggering of the silver-based chalcogenide under the characteristic external field, and the resonant structure design is combined, so that the functions and applications of electromagnetic wave switching, electromagnetic wave intelligent shielding, dynamic information communication encryption, multi-spectrum camouflage and passive electromagnetic wave protection are realized. The main conception is that a silver-based chalcogenide material with an electronic phase change characteristic is introduced as a sensitive medium, and mutation of electromagnetic wave optical characteristics covering microwave, terahertz and infrared frequency bands caused by electronic phase change of the silver-based chalcogenide is triggered by utilizing characteristic temperature, characteristic pressure and characteristic current. According to the invention, the technical barrier of wide spectrum response and multi-mode dynamic modulation is broken through, and the modulation effect can be cooperatively regulated and controlled by the components of the silver-based chalcogenide material and the structure of the resonant array.

The invention relates to the technical field of photoelectric detection devices, and discloses a photoelectric detector and a preparation method thereof, the photoelectric detector comprises a heterojunction, and the heterojunction comprises a first layer, a second layer and a third layer which are stacked; the first layer is made of a transition metal chalcogenide; the second layer is made of graphene; the third layer is made of two-dimensional semiconductor materials, and energy band structures of the three materials are arranged in a step shape. The invention further provides a preparation method of the photoelectric detector, according to the photoelectric detector and the preparation method thereof, the photo-generated carrier dynamic process of a two-dimensional material heterojunction interface is regulated and controlled through the design of a three-layer heterojunction structure, the electric transport characteristic of the photoelectric detector is optimized, and then the response speed of the device is increased.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

The invention relates to the technical field of lithium ion batteries, and particularly discloses an antimony chalcogenide coated lithium cobalt oxide positive electrode material and a preparation method and application thereof.The preparation method comprises the steps that lithium cobalt oxide powder is mixed with an antimony-containing compound, a sulfur-containing compound and a selenium-containing compound in deionized water, and a uniformly-dispersed precursor solution is formed; the molar ratio of the lithium cobalt oxide powder to the compound containing antimony, sulfur and selenium is 1: (0.01-1): (0.01-3): (0.001-2); drying the precursor solution to obtain solid powder; and calcining the solid powder at 100-500 DEG C in a protective atmosphere to finally obtain the antimony chalcogenide coated lithium cobalt oxide positive electrode material. According to the preparation method of the antimony chalcogenide-coated lithium cobalt oxide positive electrode material, the prepared antimony chalcogenide-coated lithium cobalt oxide positive electrode material has good structural stability, and when the antimony chalcogenide-coated lithium cobalt oxide positive electrode material is used in a lithium ion battery, the specific capacity of the lithium cobalt oxide battery under high voltage can be remarkably improved, and the cycle life of the lithium cobalt oxide battery under high voltage can be remarkably prolonged.

The invention belongs to the related technical field of semiconductor devices, and discloses an edge contact type field effect transistor and a preparation method thereof.The transistor comprises a substrate layer and a gate layer arranged on the surface of the substrate layer in a protruding mode, and a channel layer is arranged above the gate layer; the channel layer strides over the gate layer and is provided with a channel region located over the gate layer, two electrode regions located on the two opposite sides of the gate layer and a rising region connected between the electrode regions and the channel region, the channel layer is made of transition metal chalcogenide, and the electrode regions are used for conducting induced phase change through a lithium embedding method; therefore, edge contact of the metal phase and the semiconductor phase is realized. According to the invention, lithium embedding is limited by utilizing stress, and local stress is additionally introduced into the channel layer by utilizing a step formed by the gate layer and the substrate layer, so that the diffusion behavior of lithium ions is blocked and limited at a stress existence position, namely a rising region, preparation of a sharper phase transformation interface can be realized, and the method has high consistency and is convenient for large-scale integration.

Embodiments of this application provide a laser beam machining method targeted at chalcogenide materials and an integrated photonic device, relating to the technical fields of integrated photonic chip machining. The laser beam machining method targeted at chalcogenide materials includes: acquiring a dielectric substrate with a preset size, and cleaning the dielectric substrate; preparing a uniform and dense sulfide film on a surface of the dielectric substrate; obtaining a laser spot with a preset energy distribution pattern according to a preset machining pattern; generating laser spot scanning parameters according to the preset machining pattern; and carrying out etching-free laser oxidation machining on the sulfide film through the laser spot according to the spot scanning parameters to obtain a chalcogenide integrated photonic device. The laser beam machining method targeted at chalcogenide materials can significantly simplify the machining flow of integrated photonic chips and improve the machining efficiency of photonic chips.

An optically active nanocomposite material is provided that may have a textured substrate and a multilayer optic stack with a plurality of layers comprising nanoplatelets. The nanoplatelets may be achiral and formed of a material such as transition metal chalcogenides, Mxenes, or nanocarbons. The optically active nanocomposite material displays both linear birefringence (LB) and linear dichroism (LD) and optional circular dichroism (CD). The nanocomposite may have an optical asymmetry g-factor of greater than or equal to about 1. Further, the nanocomposite is thermally stable, for example, to a temperature of greater than or equal to about 250° C. Different methods of fabricating such nanocomposites using layer-by-layer (LBL) processes are also provided.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

A chalcogenide-based memory device capable of implementing a multi-level memory and an electronic apparatus including the chalcogenide-based memory device are provided. The memory device includes: a first electrode and a second electrode arranged to be spaced apart from each other; and a memory layer disposed between the first electrode and the second electrode, and including a plurality of memory material layers having different threshold voltages from each other. Each of the plurality of memory material layers includes a chalcogenide-based material, has a bi-directional threshold switching (OTS) characteristic, and is configured to have a threshold voltage that varies according to a polarity and an intensity of an applied voltage.

The invention provides a low-power-consumption write-in high-thermal-stability-factor memory device and a preparation method thereof. The device comprises a substrate, a spin / orbital flow generation layer, a ferromagnetic function layer, a SiO2 layer, an electrode plate and a regulation and control layer which are sequentially arranged from bottom to top, the spin / orbital flow generation layer is made of a two-dimensional transition metal chalcogenide material TaIrTe4, the ferromagnetic functional layer is made of a two-dimensional ferromagnetic material Fe < 3 + x > GaTe2, x is equal to 0-2, and the regulation and control layer is made of a two-dimensional ferroelectric material CuVP2S6; electric fields are applied to left and right ends of the regulation layer. The vertical magnetocrystalline anisotropy of the ferromagnetic functional layer is changed by regulating and controlling the ferroelectric material CuVP2S6 through an external electric field, and the high-current writing process of the device is reduced, so that the effects of reducing the power consumption and improving the thermal stability are achieved, and the durability of the device is improved.

The present invention relates to the field of sodium ion batteries, and discloses a caged cobalt iron sulfide carbon nanofiber composite material and a preparation method and application thereof, the method comprising: obtaining a caged cobalt iron Prussian blue analog by a coprecipitation method, and preparing a spinning solution with a high molecular polymer as the main raw material; obtaining a beaded fiber precursor by electrostatic spinning, and after pre-oxidation in air and pyrolysis in an inert protective atmosphere, heat-treating it together with a sulfur source or a selenium source to obtain a caged cobalt iron sulfide (CoS2 / FeS2 or CoSe2 / FeSe2) carbon nanofiber composite material. The cage structure in the present invention can increase the contact area between the electrode active material and the electrolyte, and the carbon fiber skeleton can effectively improve the conductivity and alleviate the volume change of the electrode material during the charge and discharge process. When the prepared composite material is used as the negative electrode material of the sodium ion battery, it exhibits excellent long cycle performance and rate performance.

Myriad problems with state of the art lithium based batteries, particularly electrolyte systems thereof, including but not limited to polysulfide shuttling, formation of lithium dendrites and dead lithium during stripping and plating, thermal runaway, volumetric expansion, and strict requirements for electrolyte composition, are well documented in the art and remain major obstacles to realizing the unsurpassed potential for lithium-based batteries as ideal energy storage solutions. The inventive concepts presented herein address said challenges from a multi-pronged approach, revolutionizing the electrolyte system from different approaches to produce synergistic benefits, both within the individual approaches and particularly in combination. The inventive concepts improve electrolyte systems with respect to solvents, electron withdrawing compounds, lithium ion-transporting compounds, performance enhancing additives and chalcogenides. These developments provide benefits including: improved charge / discharge capacity, Coulombic efficiency, cycle life, sulfur optimization, oxidative stability, etc. while reducing polysulfide shuttling and lithium dendrite formation, among other benefits.

The invention discloses a slow-release quantum dot tracer agent for an oil field and a preparation method. The slow-release quantum dot tracer for the oil field is characterized by comprising the following components in percentage by weight: 10-15% of a quantum dot material, 6-18% of a curing agent and 67-84% of epoxy resin, the quantum dot material is mainly prepared from a zinc source precursor, doped metal ions and an chalcogenide, wherein the molar ratio of the zinc source precursor to the doped metal ions to the chalcogenide is (8-10): (0.01-0.1): (10-25). The preparation method is simple, the reaction condition is mild, the raw materials are simple and easy to obtain, the wavelength of excitation light is controllable, and the application and popularization value is high.

The invention discloses an application of a two-dimensional metal phosphorus chalcogenide in production of hydrogen peroxide in seawater. Specifically, the two-dimensional metal phosphorus chalcogenide nanosheet with a specific thickness is prepared through vacuum chemical vapor transport and ultrasonic stripping technologies and is used for producing hydrogen peroxide through efficient electrocatalytic oxygen reduction in seawater. The metal cations comprise magnesium, aluminum, scandium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, palladium, silver, cadmium, indium, tin, mercury and bismuth; the chalcogenide anions comprise sulfur, selenium and tellurium. The nanosheet is good in crystallinity and uniform in thickness. Under the condition of taking seawater as an electrolyte solution, the composite material shows excellent performance of producing hydrogen peroxide through electrocatalytic oxygen reduction, the selectivity of hydrogen peroxide is about 98%, the yield is about 6.0 mol gcat <-1 > h <-1 >, and meanwhile, the composite material shows good stability in a continuous test process for 1000 hours. The compound is simple and universal to prepare and excellent in electrochemical property, and a road is indicated for practical application of production of hydrogen peroxide through electrocatalytic oxygen reduction in seawater.

Myriad problems with state of the art lithium based batteries, particularly electrolyte systems thereof, including but not limited to polysulfide shuttling, formation of lithium dendrites and dead lithium during stripping and plating, thermal runaway, volumetric expansion, and strict requirements for electrolyte composition, are well documented in the art and remain major obstacles to realizing the unsurpassed potential for lithium-based batteries as ideal energy storage solutions. The inventive concepts presented herein address said challenges from a multi-pronged approach, revolutionizing the electrolyte system from different approaches to produce synergistic benefits, both within the individual approaches and particularly in combination. The inventive concepts improve electrolyte systems with respect to solvents, electron withdrawing compounds, lithium ion-transporting compounds, performance enhancing additives and chalcogenides. These developments provide benefits including: improved charge / discharge capacity, Coulombic efficiency, cycle life, sulfur optimization, oxidative stability, etc. while reducing polysulfide shuttling and lithium dendrite formation, among other benefits.

The invention discloses a preparation and application method of a super-lubricating coating based on a two-dimensional material. According to the invention, the charge density wave dynamic regulation and control mechanism of the fluorinated graphene and transition metal chalcogenide heterostructure is combined with the stress buffer characteristic of boron nitride, so that a slip interface with a low shear barrier is constructed on the atomic scale, and the energy dissipation in the friction process is remarkably reduced. A three-dimensional interpenetrating network of the helical carbon nanotubes and the hyperbranched polymer not only effectively inhibits stacking of two-dimensional materials, but also forms a multi-dimensional damage repair mechanism through solid-liquid phase change self-adaptive filling of the liquid metal and a boundary lubrication effect of the nano-diamond. Through the synergistic effect of the material system, the coating keeps the ultralow friction characteristic under the wide-range working condition, meanwhile, the coating has the composite protection capacity of abrasion resistance, high temperature resistance and corrosion resistance, and the intrinsic lubrication characteristic of the two-dimensional material is reserved while the compactness of the coating is guaranteed through the gradient cross-linking technology of ultraviolet curing and heat treatment.

Disclosed herein are methods to synthesize perovskite nanoparticles in solution and at a relatively low temperature (110-300 C). This synthesis of low-temperature, solution-based chalcogenide perovskites were shown to produce materials with excellent optoelectronic properties. Furthermore, disclosed is a technique to stabilize the desired phase of these perovskites (particularly those phases which can not be fabricated in existing techniques). In addition, the material of the composition BaZrS3 (barium zirconium sulfide) has been synthesized in the perovskite crystal structure as nanoparticles for the first time.

The invention relates to a transmission electron microscope sample preparation method of a transition metal chalcogenide layered material, which comprises the following steps: grinding a transition metal chalcogenide block, and selecting a slice in the transition metal chalcogenide block; placing the sheet on an adhesive tape, repeatedly folding and bonding for many times, tearing the adhesive tape for stripping, attaching the adhesive tape obtained after stripping to a transfer substrate, gently applying force to enable the surface of the adhesive tape to be tightly attached to the transfer substrate, and then tearing off the adhesive tape from the transfer substrate to obtain a substrate attached with a stripping thin layer; immersing the substrate in an infiltration solvent, carrying out ultrasonic treatment, and separating a transfer substrate and a stripping thin layer of the substrate; and taking out the transfer substrate in the infiltration solvent, immersing the electron microscope grid on the infiltration solvent liquid film on the surface of the transfer substrate, moving the electron microscope grid to enable the stripping thin layer to be carried on the electron microscope grid, drying, and waiting for observation of the transmission electron microscope. Compared with the prior art, the method is easy and convenient to operate, low in cost and free of additional instruments, and the large-area few-layer thin-area sample can be obtained.

The invention provides a two-dimensional transition metal chalcogenide (TMDs) synthesis method based on a co-sputtering technology, and aims to solve the bottlenecks in the aspects of low-temperature controllable synthesis, wafer-level uniformity, accurate layer number regulation and control and industrial expandability in the prior art. The method comprises the following steps: heating a transition metal compound to a reaction temperature, and carrying out co-sputtering reaction in an inert gas environment by taking an X element (Te, Se) and an M element (Pd, Pt, Bi, Mo, W, Ti) simple substance as target materials to realize low-temperature (llt; and wafer-level uniform growth of the high-purity TMDs thin film at 400 DEG C is realized. The number of layers and the stoichiometric ratio of the product can be accurately controlled by regulating and controlling the target material combination and sputtering parameters, the flexible substrate and the rigid substrate are compatible, and the subsequent transfer process is simplified. In addition, the method is simple in reaction condition, has industrial application potential, and is suitable for the fields of semiconductor devices, photoelectric devices, energy storage and the like.

Provided are a chalcogenide-based memory device capable of implementing multi-level memory and an electronic apparatus including the chalcogenide-based memory device. The memory device includes a first electrode and a second electrode arranged to be spaced apart from each other, and a memory layer provided between the first electrode and the second electrode and including a plurality of memory material layers having different threshold voltages from each other. Each of the plurality of memory material layers includes a chalcogenide-based material, has an ovonic threshold switching (OTS) characteristic, and is configured to have a threshold voltage varying depending on a polarity and intensity of an applied voltage.

Systems and methods that utilize a separator coated by particles for Li dendrite detection in an ordinary two-electrode battery system. The particles can be red phosphorus (RP) particles and / or other particles that are poor electronic conductors, are able to react with Li, and will form an insoluble product with Li, such as silicon, germanium, arsenic, metal oxides, metal halides, metal chalcogenides, chalcogenides, and LiMxEyOz (M=metal, E=nonmetal, O=oxygen, x≥0, y≥0, z≥0). These other particles can be used by themselves or in combination with one another. No additional electrode is needed, and the presence of Li dendrites can be detected simply based on the voltage profile during the charging step.

This disclosure provides an optically active nanocomposite material having a textured substrate and a multilayer optical stack comprising multiple nanosheets. The nanosheets may be chiral and composed of materials such as transition metal chalcogenides, MXenes, or nanocarbon. The optically active nanocomposite material exhibits linear birefringence (LB) and linear dichroism (LD), and optionally circular dichroism (CD). The nanocomposite material also exhibits optical asymmetry. g The factor may be greater than or equal to 1. Furthermore, the nanocomposite material exhibits thermal stability, for example, remaining stable at temperatures above or equal to about 250 °C. This disclosure also provides different methods for preparing such nanocomposite materials using a layer-by-layer self-assembly (LBL) process.

The application belongs to the technical field of chemical synthetic materials, and relates to an alkali metal ion intercalated transition metal chalcogenide compound as well as a preparation method and application thereof. x M m X n wherein A is one or more of alkali metal elements, and 0 < x < 1; M is one or more of transition metal elements, and m is 1-2; X is one or more of chalcogen elements, and n is 1-3; and the alkali metal ion intercalated transition metal chalcogenide compound is obtained by mixing and reacting an intercalation host transition metal chalcogenide compound, an intercalation guest alkali metal element-containing compound and an auxiliary metal intercalation agent.