120 results about "Chalcogenide" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

This disclosure provides an optically active nanocomposite material having a textured substrate and a multilayer optical stack comprising multiple nanosheets. The nanosheets may be chiral and composed of materials such as transition metal chalcogenides, MXenes, or nanocarbon. The optically active nanocomposite material exhibits linear birefringence (LB) and linear dichroism (LD), and optionally circular dichroism (CD). The nanocomposite material also exhibits optical asymmetry. g The factor may be greater than or equal to 1. Furthermore, the nanocomposite material exhibits thermal stability, for example, remaining stable at temperatures above or equal to about 250 °C. This disclosure also provides different methods for preparing such nanocomposite materials using a layer-by-layer self-assembly (LBL) process.

The application provides a ternary mixed metal organotin supertetrahedral chalcogenide cluster crystal state for resin catalysts and a synthesis method and application thereof. The chalcogenide cluster compound comprises at least a core and a periphery, the core comprises metal ions, and the periphery comprises organotin; the core and the periphery form a cluster structure; and the molecular general formula of the chalcogenide cluster compound is (RSn)4M4M'2S 16 wherein R is selected from n-butyl (nBu) and / or phenyl (Ph); M is selected from In or Ga; and M' is selected from Zn, Cd, Mn and Co. The synthesis method of the application has low requirements on the purity of raw materials, simple process, and the crystal state is easy to repeat, convenient for production. The yield of the chalcogenide cluster crystal state obtained by the synthesis method of the application can reach more than 45%. The chalcogenide cluster compound of the application can be used in the fields of photoelectric catalysis and nonlinear optics.

The invention discloses an electrochemical method for regulating and controlling the phase, resistance and magnetism of a two-dimensional layered material, and belongs to the field of two-dimensional transition metal chalcogenide. The electrochemical method comprises the steps that an electrode system is provided, the electrode system comprises a working electrode and a counter electrode, the working electrode comprises a two-dimensional layered material, the chemical formula of the two-dimensional layered material is MX2, M represents a transition metal element, and X represents a group VI element where a sulfur element is located; providing an electrolyte, wherein the electrolyte is a soluble salt solution containing magnetic transition metal ions; the electrode system is placed in the electrolyte, and under the action of an external electric field, the magnetic transition metal ions are embedded and separated from the two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically regulated and controlled. According to the technology, magnetic transition metal ions are driven by an electric field to be reversibly embedded into and separated from a two-dimensional layered material, so that the phase, the resistance and the magnetism of the two-dimensional layered material are synergistically and dynamically regulated and controlled, and the problems that the traditional external field regulation and control dimension is single, and intrinsic physical property coupling change is difficult to realize are solved. And multi-physical-property combined regulation and control is realized by adjusting an electric field, so that a basis is provided for application of the material in the fields of photoelectric devices, magnetoelectric storage, sensors and the like.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

The invention relates to the technical field of functional material preparation, in particular to a two-dimensional transition metal chalcogenide target material and a preparation method thereof. The method comprises the steps that high-purity tellurium and transition metal are mixed, the transition metal is high-purity tungsten or high-purity molybdenum, vacuum swing smelting is conducted at the temperature of 1100-1300 DEG C, and a cast ingot is obtained; crushing and ball-milling the cast ingot to obtain micron-sized powder: carrying out high-energy ball-milling on the micron-sized powder to obtain nano-sized powder; the nanoscale powder is subjected to heat treatment at the temperature of 150-160 DEG C, and nanopowder subjected to heat treatment is obtained; presintering the nano powder subjected to heat treatment at 300-400 DEG C, and then sintering at a high temperature of 500-750 DEG C and 20-40 MPa to obtain a target blank; and carrying out hot isostatic pressing treatment on the target blank under the conditions of 500-650 DEG C and 80-150 MPa. According to the preparation method provided by the invention, the high-quality alloy target material with high density, large size and uniform components can be obtained.

This invention provides a method for preparing two-dimensional TMDs alloys using non-metallic chalcogenides. It is a modified CVD method in which a non-metallic chalcogenide containing two chalcogen elements replaces the elemental chalcogenides as the non-metallic growth source. The ratio of the two chalcogen elements in the TMDs alloy can be changed by adjusting the weight ratio of the non-metallic growth source to the metallic growth source. Adding 40 mg of WO3 and 55, 38, 26, and 15 mg of SeS2 respectively yielded WS... 0.96 Se 0.04 WS 0.65 Se 0.35 WS 0.5 Se 0.5 WS 0.27 Se 0.73 Four types of TMD alloy single crystals can be fabricated. Large-size single crystals and large-area thin films of two-dimensional TMD alloys with tunable chemical composition and uniform layer number can be prepared. This provides more options for optoelectronic devices with specific spectral responses, field-effect transistors, and flexible electronic devices.

The present application relates to the field of chemical synthetic materials and catalysis, and particularly relates to a metal-amorphous structure chalcogenide core-shell nanocrystal and a preparation method and application thereof.The preparation method comprises the following steps: (1) synthesizing Au nanorods through a seed growth method; (2) coating silver on the surface of the Au, and epitaxially growing a silver shell layer nanocrystal; and (3) sulfidizing the silver shell layer nanocrystal, and performing hydrothermal cation exchange to obtain a core-shell structure nanocrystal.In the metal-amorphous structure chalcogenide core-shell nanocrystal, the amorphous surface to a certain extent is conducive to adsorbing reaction substrates, and promotes the progress of the photocatalytic carbon dioxide reduction reaction.The metal-amorphous structure chalcogenide core-shell nanocrystal has excellent gas-solid phase photocatalytic carbon dioxide reduction performance, and can achieve good effects without a photosensitizer and a sacrificial agent.

The invention provides a long-wave infrared laser reflector with a three-medium structure. The long-wave infrared laser reflector structurally comprises a substrate Sub, a transition layer B, a metal layer G, a medium film system C and an air layer A from bottom to top. The dielectric film system C is structurally characterized by being formed by alternately stacking one or more groups of materials with high, medium and low refractive indexes. The invention aims to realize high reflection of a long-wave infrared band. Through meticulous design, three kinds of materials with high, medium and low refractive indexes are reasonably distributed in the reflector. According to the strategy, the absorption of the reflector is effectively reduced by balancing the low absorption of the chalcogenide and the low refractive index of the fluoride, the temperature rise caused by heat absorption is remarkably reduced, and meanwhile, the reflectivity is improved. Therefore, the continuous laser damage threshold value of the reflecting mirror is greatly enhanced theoretically, and the reflecting mirror shows higher stability and tolerance when facing continuous laser irradiation.

The invention discloses a solid-state battery and a positive electrode material thereof. The solid-state battery consists of a lithium storage positive electrode, a battery electrolyte and a lithium-rich negative electrode. Wherein the lithium-storing positive electrode comprises an embedded lithium-storing transition metal chalcogenide and a composite material of the embedded lithium-storing transition metal chalcogenide. The positive electrode material has ionic conductivity and electronic conductivity at the same time, a three-dimensional ionic and electronic conductive network structure is formed in the positive electrode, and the network structure is beneficial to intercalation and deintercalation of lithium ions. The crystal structure of the transition metal chalcogenide can be a layered structure or a SiFerel phase, and transition metal contained in the transition metal chalcogenide can be at least one of IVB, VB, VIB and VIIB group metal elements. In the lithium ion intercalation and deintercalation process, the transition metal is subjected to valence change reaction. By introducing the positive electrode material, the weight ratio of inactive substances in the battery is effectively reduced, and the energy density of the solid electrolyte is further improved.

The invention relates to a quantum cascade laser emitting a polarized TM optical mode with a wavelength between 3 and 15 µm, comprising an amplifying medium and a main waveguide. The latter includes a coupling section in contact with the amplifying medium, comprising a diffraction grating (DFB). The coupling section has a width greater than or equal to a minimum width from which an antisymmetric supermode propagating in a laser guidance structure comprising the amplifying medium and the main waveguide has a confinement factor in an active region of the amplifying medium strictly greater than those of the optical modes capable of being guided by the guidance structure. The main waveguide comprises a core based on atoms from column IVA of the periodic table of elements and a confinement subshell of SiN or a chalcogenide. (See Figure 1A for the abstract.)

The application discloses a two-dimensional material growth method based on countercurrent non-metal source supply, and belongs to the technical field of two-dimensional materials. In the preparation, a non-metal source is placed in a single-port quartz test tube and arranged downstream of a tube furnace by using countercurrent supply of a chemical vapor deposition system. After the non-metal source is gasified at high temperature, the non-metal source is diffused to the surface of a substrate by using a concentration gradient, and the flow rate of a carrier gas can be regulated to regulate the non-metal source gas phase concentration on the surface of the substrate. Compared with a conventional chemical vapor deposition method, the method solves the problems of surface "deactivation" of a metal source and substrate pollution caused by diffusion of the non-metal source to the metal source and the substrate before the growth process. The preparation method provided by the application has strong controllability, the morphology, domain size and optical quality of the obtained two-dimensional transition metal chalcogenide are uniform, and the two-dimensional transition metal chalcogenide has excellent optical and electrical properties and wide application prospect.

This invention discloses a rare-earth ion co-doped two-dimensional semiconductor material with optimized ratio, its preparation method, and its application, belonging to the field of two-dimensional materials technology. The material is a transition metal chalcogenide WS2 doped with Er. 3+ and Yb 3+ By adjusting the mass ratio of ErCl3 to YbCl3 in the precursor, the Er:Yb doping molar ratio was optimized to 1:4 while maintaining a constant total doping concentration. This invention employs salt-assisted chemical vapor deposition to grow centimeter-scale, uniformly thick WS2 (Er-Yb) monolayer films on sapphire substrates, achieving an overall rare earth doping concentration as high as 10.7 at%. Experiments confirm that when the Er:Yb doping ratio is optimized to 1:4, the Yb... 3+ As a sensitizer, it can effectively absorb photon energy and efficiently transfer it to Er. 3+ The activator significantly enhances energy transfer efficiency and inhibits concentration quenching, enabling the material to exhibit the best photoelectric properties under 635nm illumination.

The present invention provides a sealing layer for semiconductor devices, particularly semiconductor devices containing chalcogenide materials, and a method for manufacturing the same. [Solution] The method for manufacturing a semiconductor device includes providing a substrate 18 having an exposed surface containing a chalcogenide material, and forming low-χ metal oxide layers 46A and 52A on the chalcogenide material by periodically exposing the substrate to an oxygen precursor containing a low-electronegativity (low-χ) metal precursor and O2. The electronegativity of the low-χ metal of the metal precursor is 1.6 or less.

The invention belongs to the technical field of two-dimensional nano materials, and relates to an MXene material as well as a preparation method and application thereof. The invention provides a novel and efficient MXene material preparation method which is characterized in that a precursor MAX phase material, a chalcogenide element simple substance and an iodine simple substance are mixed and then subjected to a high-temperature reaction in a vacuum environment. According to the method, a chalcogenide and iodine are ingeniously utilized to generate iodide (such as SeI2 or TeI2) with strong oxidizing property in situ at a high temperature, the chalcogenide in a high oxidation state can selectively oxidize A-site atoms (such as Al) in an MAX phase, the A-site atoms are converted into volatile iodide (such as AlI3) and escape from a system, and therefore selective stripping of an A layer is achieved; and a two-dimensional Mn + 1Xn skeleton is formed. Meanwhile, the reduced chalcogenide is directly bonded to the surface of MXene as a terminal group, and the functionalized MXene material with the chalcogenide terminal group (-S,-Se or-Te) is synthesized in one step.

Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).

The invention relates to a thin film CIGS solar cell. The method for producing such a solar cell comprises the following sequential steps: providing a substrate (12); forming a back electrode layer (14) on the substrate; forming a hole transport structure (20) on the back electrode layer, the hole transport structure comprising a hole transport layer (16) comprising a P-type conductive material on the back electrode layer and a stabilization layer (18) on the hole transport layer, the stabilization layer comprising a metal oxide and / or a metal nitride; and forming a semiconductor absorber layer (22) on the hole transport structure, the absorber layer comprising a chalcogenide material. A corresponding thin film solar cell having such a double layer hole transport structure is also provided.

The invention discloses a middle and far infrared low-noise ultra-wideband spectrum generating device, which comprises a femtosecond fiber laser, a single-mode ZBLAN fiber, a single-mode InF3 fiber, a first mode field adapter, a hollow-core anti-resonance fiber, a second mode field adapter, a full-positive dispersion chalcogenide fiber and an air chamber which are sequentially arranged along a laser path, and is characterized in that the femtosecond fiber laser is used for outputting laser pulses; the wavelength of laser pulses is larger than or equal to 2.1 micrometers, the pulse width is smaller than or equal to 30 fs, and the average power is larger than or equal to 2 W. A tail fiber of the femtosecond fiber laser, the single-mode ZBLAN fiber and the single-mode InF3 fiber are sequentially welded, and the single-mode InF3 fiber is in mode field adaptive connection with the hollow-core anti-resonance fiber through a first mode field adapter. The hollow-core anti-resonance optical fiber is in mode field adaptive connection with the full-positive-dispersion chalcogenide optical fiber through a second mode field adapter, the single-mode ZBLAN optical fiber and the single-mode InF3 optical fiber are packaged in a gas chamber, and the gas chamber is filled with protective gas. The device disclosed by the invention realizes all-fiber, and can generate an ultra-wideband spectrum which covers a wave band of 3-8 microns and has a low-noise characteristic.

The disclosure relates to methods of depositing a molybdenum dichalcogenide on a surface of a semiconductor substrate from a gas phase. The methods utilize an oxygen and halogen comprising molybdenum precursor and, in some embodiments, the deposition methods may be selective. The methods may be cyclic deposition methods, in particular atomic layer deposition methods. The disclosure further relates to a molybdenum dichalcogenide layer deposited according to the methods herein, as well as to semiconductor processing assemblies arranged to execute said methods.

This invention relates to a near-infrared detector array based on two-dimensional noble metal chalcogenides, its fabrication method, and its applications, belonging to the field of image sensor technology. First, an underpotential deposition method is used to drive noble metal atoms to self-confinedly deposit on the silicon substrate surface using the potential difference between the noble metal and the silicon substrate, obtaining a wafer-level noble metal thin film. Then, chemical vapor deposition is used to sulfide, selenize, or tellurize the wafer-level noble metal thin film, transforming it in situ into a wafer-level two-dimensional noble metal chalcogenide thin film. Finally, a near-infrared detector array is fabricated using micro-nano fabrication processes. The two-dimensional noble metal chalcogenide near-infrared detector of this invention possesses advantages such as good mechanical flexibility, high mobility, and excellent stability, significantly improving the detector's detection performance.

The application discloses an infrared large-view-field wide-spectrum multi-spectrum imaging spectrometer optical system, which is coaxially arranged in sequence from an object plane to a focal plane as a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a filter wheel; the first lens and the fourth lens are meniscus positive lenses, the second lens, the third lens and the fifth lens are meniscus negative lenses, and the sixth lens is a double-convex positive lens. The application adopts common chalcogenide and zinc selenide crystal infrared materials, corrects aberration and chromatic aberration by optimizing surface shape parameters of each surface and adopting aspheric surfaces, realizes high-quality imaging in a wide waveband range of 2.5-15 mu m, has the characteristics of large view field, small distortion, athermalization and super-long back intercept, is easy to produce and adjust, has strong versatility, and can be applied to the fields of monitoring of chemical harmful gases, environmental protection, agriculture and food safety, medical treatment and health and judicial identification.

The invention discloses a spin light current detection method based on a boundary region of a two-dimensional transition metal chalcogenide system. The detection method comprises the following steps: S1, preparing a two-dimensional transition metal chalcogenide micro-nano device; s2, a spin photocurrent detection and regulation platform is built, a laser emits a beam of laser, the beam of laser enters a chopper through a reflector, the laser passing through the chopper enters a polarizer, the laser passes through an electro-optical modulator after being changed, the beam is periodically modulated into linearly polarized light, left circularly polarized light and right circularly polarized light, and the linearly polarized light, the left circularly polarized light and the right circularly polarized light are polarized; then the light beams enter a microscope objective through a semi-reflecting and semi-transmitting flat plate and a light splitting crystal, and light spots are formed at the focus position of the microscope objective through convergence of the microscope objective; and S3, projecting a light spot formed by convergence of the microscope objective in the step S2 on the two-dimensional transition metal chalcogenide micro-nano device, and detecting and extracting spin light current. The method is used for accurately detecting, regulating and controlling the boundary spin photocurrent of WSe2 and promoting research and application of two-dimensional spin photoelectronic devices.

The present invention provides a solid electrolyte, a method for preparing the same, its use, and an electrochemical device. The preparation method includes performing ion exchange of molecular sieve-Na in an acidic solution so that the cations in the pores of molecular sieve-Na are exchanged with protons, forming molecular sieve-H by evaporating water molecules after washing and drying, forming OH by bonding oxygen and protons in the aluminum-oxygen tetrahedron of molecular sieve-H, obtaining molecular sieve-X1 by exchanging OH in molecular sieve-H with halogen X1 (X1 = F, Cl, Br, I) through a halogenation reaction, and firing molecular sieve-X1 and molten AX2 to obtain a solid electrolyte. The pH of the acidic solution is 1.2 < pH < 2.1. AX2 includes an alkali metal halide and / or an alkali metal chalcogenide. The firing temperature is 300 to 500 °C. The solid electrolyte has high ionic conductivity and can be used alone as a solid electrolyte.

The invention relates to a laminated cell, a photovoltaic module and a preparation method of the laminated cell. The laminated cell comprises a first cell and a second cell which are sequentially arranged along a light incidence direction, the first cell comprises a first transparent electrode, a hole transport layer, a perovskite light absorption layer, a tunneling composite layer and a hole tunneling layer which are arranged in sequence in the light incidence direction; wherein the tunneling composite layer comprises a first sub-layer and a second sub-layer which are alternately stacked in the light incidence direction, the material of the first sub-layer comprises a metal oxide, and the material of the second sub-layer comprises a transition metal chalcogenide. And the photoelectric conversion efficiency of the laminated cell is improved.

Provided are a memory device including oxygen and chalcogenide, an electronic device including the memory device, and a method of manufacturing the memory device. The memory device may include a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction, wherein the second direction may cross the first direction, and a memory layer at points where the plurality of bit lines and the plurality of word lines cross each other. The memory layer may have a characteristic in which a threshold voltage changes depending on a polarity and an intensity of an applied voltage. The memory layer may include Ge, As, Se, In, and O.

The invention discloses a self-powered broadband photo-detecting device and a fabricating method. According to the invention, the self-powered broadband photo-detecting device includes a substrate, a plurality of nanorods, and a plurality of nanoflake clusters. The plurality of nanorods is formed on the upper surface of the substrate. The plurality of nanorods is formed from an oxide of a metal. Each nanoflake cluster is formed on a respective top of one of the plurality of nanorods. The plurality of nanoflake clusters is formed of a chalcogenide of the metal.

The application discloses an environment-friendly copper-gallium-chalcogenide zinc sulfide core-shell quantum dot as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing a gallium source, a copper source, oleylamine and 1-dodecyl mercaptan, heating, degassing in a nitrogen environment, adding a sulfur precursor solution, reacting, obtaining a quantum dot solution, heating the quantum dot solution, adding a zinc acetate precursor solution dropwise and stirring to react, continuously heating, adding a zinc stearate precursor solution dropwise and stirring to react, water quenching after the reaction, purifying, and obtaining a copper-gallium-chalcogenide zinc sulfide core-shell quantum dot. The copper-gallium-chalcogenide zinc sulfide core-shell quantum dot material prepared by the method of the application does not add toxic heavy metal materials, is harmless to human bodies and the environment, and has the advantage of high light condensation efficiency, and can effectively solve the problems of existing quantum dot materials.

This invention relates to a series of alkali metal rare earth chalcogenides and a series of alkali metal rare earth chalcogenide nonlinear optical crystals, their preparation methods, and their applications. The general chemical formula for both the series of halides and the nonlinear optical crystals is A3Ln. 11 Ga 19 Q 45 X3, where A = K, Rb, Cs; Ln = La, Pr, Nd; Q = S, Se; X = Cl, Br, I, all belong to the hexagonal crystal system with space group and cell parameter Z = 1. This series of halides is synthesized using a high-temperature solid-state method, while this series of nonlinear optical crystals is grown using a high-temperature solution method or the Bridgman process. This material can be used to manufacture second harmonic generators, up- and down-frequency converters, optical parametric oscillators, etc.