160 results about "Erbium" patented technology

The invention provides a satellite-borne EDFA on-orbit performance degradation monitoring method and system. The satellite-borne EDFA on-orbit performance degradation monitoring method comprises the steps that a health baseline is preset; closing input light and a first-stage pump of the satellite-borne EDFA; driving a second-stage pump of the satellite-borne EDFA to maintain fixed power output, and recording the working temperature of the second-stage pump; acquiring the monitoring optical power of the second-stage pump and the spontaneous radiation power of the output end of the satellite-borne EDFA; calculating to obtain spontaneous radiation conversion rate; and carrying out satellite-borne EDFA degradation determination. The method has the beneficial effects that the interference of temperature fluctuation on a monitoring result is greatly reduced through the spontaneous radiation conversion rate which is a relative parameter, and the method is adaptive to a complex thermal environment of a satellite; degradation is judged based on a preset health baseline, precise monitoring of the performance state of the satellite-borne EDFA is achieved, and a reliable basis is provided for maintenance. Precise positioning of a degraded part is realized, a fault source is clear, blind maintenance is avoided, and the maintenance efficiency is improved; monitoring can be completed in a second level and can be arranged to be carried out in a communication intermittent period, and normal communication service of the satellite is not affected.

The invention discloses a method for determining the content of trace holmium, thulium and tungsten in rare earth erbium and a compound thereof, which comprises the following steps: placing a rare earth erbium and compound sample thereof in a beaker, and performing a blank test along with a sample; adding nitric acid, heating at low temperature until the sample is completely dissolved, and cooling; transferring into a volumetric flask, adding a cesium internal standard solution, diluting with water, and uniformly mixing; the holmium, the thulium and the tungsten are measured by using an oxygen mode of an inductively coupled plasma tandem mass spectrometer, and the contents of the holmium, the thulium and the tungsten are calculated according to a working curve method. According to the method, the inductively coupled plasma tandem mass spectrometry technology is used, and mass spectrum interference of an erbium matrix on holmium, thulium and tungsten is effectively eliminated by selecting a proper reaction mode and optimizing the flow of reaction gas.

The invention relates to the technical field of optical amplifiers, in particular to an optical amplifier based on QSFP-DD packaging. The optical amplifier comprises a packaging shell, a circuit board, an optical assembly and a heating piece. The circuit board is arranged in the packaging shell, and a connecting module is arranged at one end, penetrating out of the shell, of the circuit board; the optical assembly comprises an erbium-doped optical fiber which is located in the packaging shell and arranged on one side of the circuit board in the thickness direction; the heating element is arranged in the packaging shell and is positioned between the erbium-doped optical fiber and the circuit board; wherein the circuit board is electrically connected to the heating element, and the heating element acts on the Er-doped optical fiber so as to adjust the temperature of the Er-doped optical fiber. The optical amplifier based on QSFP-DD packaging is smaller in size, can meet the arrangement requirement of a high-density data center cabinet, and is more stable in transmission performance during working.

The present invention designs a high-strength aluminum-erbium alloy for additive manufacturing and a preparation method thereof. The alloy contains: 4-20wt% erbium (Er); 2-10wt% magnesium (Mg); less than or equal to 1wt% manganese (Mn); optionally, 0-1wt% scandium (Sc); optionally, 0-1wt% zirconium (Zr). The present invention aims to simultaneously improve the alloy's forming performance and mechanical properties. Based on the phase diagram calculation method to assist in alloy composition design, the Al-Er eutectic system is selected, the solidification range is reduced, and a fine-grained phase is formed, thereby achieving the technical effects of refined structure, no thermal cracks, and excellent printing performance. In particular, a continuous cellular L12Al3Er eutectic network structure with plastic deformation ability is introduced, with a size of hundreds of nanometers, which is both strengthened and toughened. The aluminum-erbium alloy has both excellent print formability and comprehensive mechanical properties, and the preparation method is mature, low-cost, and highly efficient, and can be produced on a large scale industrially.

Dipole engineering techniques for devices of stacked device structures are disclosed herein. An exemplary method for forming a gate stack of a transistor (e.g., a top transistor) of a transistor stack includes forming a high-k dielectric layer, forming an n-dipole dopant source layer over the high-k dielectric layer, performing a thermal drive-in process that drives an n-dipole dopant from the n-dipole dopant source layer into the high-k dielectric layer, and forming at least one electrically conductive gate layer over the high-k dielectric layer after removing the n-dipole dopant source layer. A drive-in temperature of the thermal drive-in process is less than 600° C. (e.g., about 300°° C. to about 500°° C.). The n-dipole dopant is strontium, erbium, magnesium, or a combination thereof. The method can further include tuning thermal drive-in process parameters to provide the gate dielectric with an n-dipole dopant profile having a peak located at a high- k / interfacial interface ±0.5 nm.

The present invention relates to the field of nanomaterial synthesis, and discloses an upconversion luminescent material, a preparation method thereof, and an application thereof. The preparation method of the upconversion luminescent material comprises: (1) first stirring an ytterbium salt solution, an ammonium molybdate tetrahydrate solution, and a rare earth metal salt solution to obtain an intermediate I; the rare earth metal salt in the rare earth metal salt solution is selected from at least one of an erbium salt, a holmium salt, a praseodymium salt, and a europium salt; (2) subjecting the intermediate I to a hydrothermal reaction in a hydrothermal reactor to obtain an intermediate II; and (3) sequentially subjecting the intermediate II to a drying treatment and a calcination treatment to obtain the upconversion luminescent material. The upconversion luminescent material particles prepared by the method of the present invention have an average particle size of nanometer level, a good degree of crystallinity, and good reverse thermal quenching performance.

The invention discloses an erbium-doped aluminum oxide and silicon nitride heterogeneous integrated on-chip optical amplifier and an integration method thereof. The amplifier is composed of a straight waveguide, an interlayer coupling waveguide and a bent waveguide. The erbium-doped aluminum oxide-silicon nitride heterogeneous integrated waveguide is formed by adopting the processes of low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, oxidation and etching, radio frequency reaction magnetron sputtering, chemical mechanical polishing and the like. According to the structure, signal light pump light is transmitted in the silicon nitride waveguide with the small mode field area in the bent waveguide, so that the compactness of the device is ensured; signal light pump light is coupled into an aluminum oxide strip waveguide with a large mode field area in a straight waveguide area, so that mode field overlapping of 980nm pump light and 1550nm pump light is improved, and amplification of the large mode field area is realized. According to the invention, large-mode-area on-chip optical waveguide amplification of 980nm pump light pumping is realized, and the large-mode-area on-chip optical waveguide amplification device has a wide application prospect in the field of integrated photoelectronics and the field of optical communication.

The invention discloses a series of high-stability negative temperature coefficient heat-sensitive materials based on seven-principal-element high-entropy rare earth stannate and application, and aims to solve the problem that existing stannate heat-sensitive materials with pyrochlore structures cannot meet long-term application in high-temperature environments. The series of heat-sensitive materials are prepared by mixing lanthanum trioxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, dysprosium oxide and tin dioxide with erbium oxide or ytterbium oxide respectively, and the preparation process comprises the steps of wet three-dimensional vibration ball milling, powder calcination, cold isostatic pressing, high-temperature sintering and the like. And finally obtaining the negative temperature coefficient heat-sensitive material with the pyrochlore structure. The electrical property parameters of the series of materials are as follows: B is equal to 13914-14067 + / -1.89% K, and rho 1500 DEG C is equal to 180.26-204.09 + / -1.38% omega.cm. The negative temperature coefficient heat-sensitive material has the negative temperature coefficient characteristic in the wide temperature range of 400-1500 DEG C and shows excellent high-temperature aging stability under the high-temperature condition of 1500 DEG C, and the resistance drift rate of the negative temperature coefficient heat-sensitive material is only 0.7% after an aging test for 500 hours.

The invention discloses a modification method of a ternary positive electrode material. The modification method comprises the following steps: S1, carrying out a co-precipitation reaction on a solution of transition metal sulfate in an inert gas atmosphere; a sulfate solution of rare earth elements is synchronously added in the coprecipitation process, and a ternary precursor with the surface coated with rare earth hydroxide is formed; and S2, mixing the ternary precursor obtained in the step S1 with a lithium source, calcining in an air atmosphere, and cooling to obtain the fast ion conductor coated ternary positive electrode material, the rare earth elements are selected from one or more of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium; the transition metal sulfate is soluble salt of Ni, Co and Mn. The rare earth element sulfate is added in the coprecipitation process, the rare earth element hydroxide is precipitated on the surface of the precursor, the lithium source is removed after filtering and drying, uniform mixing is performed, and the ternary positive electrode material which contains the rare earth element and is uniformly coated with the fast ion conductor is obtained after calcination, so that side reactions on the surface of the material are reduced; and the cycling stability of the positive electrode material is improved.

The invention provides an erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material and a preparation method thereof, and belongs to the technical field of crossing of functional ceramic materials and optical sensing technologies, the erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material comprises a matrix phase and doped ions, the matrix phase is Al2O3-YAG (aluminum oxide-yttrium aluminum garnet) composite ceramic; wherein the mass ratio of Al2O3 is 30%-70%, and the mass ratio of YAG is 30%-70%; the doping ions are Er < 3 + > and Yb < 3 + >, and based on the total molar weight of the matrix phase, the doping concentration of Er < 3 + > is 0.5-3 mol%, and the doping concentration of Yb < 3 + > is 5-20 mol%; the sensing material realizes temperature sensing under the excitation of 980 nm laser and on the basis of the energy level emission conditions of 2H11 / 2 to 4I15 / 2 and 4S3 / 2 to 4I15 / 2 of Er < 3 + >. The Al2O3-YAG composite ceramic is used as an Er < 3 + > / Yb < 3 + > doped matrix for optical temperature measurement for the first time, and the high-temperature stability is superior to that of fluorescent powder and glass materials; the mechanical strength and the thermal shock resistance are obviously improved; elements are uniformly distributed, and the concentration quenching effect is avoided.

The invention discloses erbium-containing high-strength aluminum alloy powder suitable for selective laser melting forming and a technological method of the erbium-containing high-strength aluminum alloy powder, and belongs to the technical field of additive manufacturing. The erbium-containing high-strength aluminum alloy powder prepared through specific component design is used for additive manufacturing, and according to the unique layered structure and stress distribution characteristics of an SLM forming part, the erbium-containing high-strength aluminum alloy powder is prepared; the spraying mode of the quenching liquid and the formed temperature gradient are designed in a targeted mode, and the specific quenching liquid is combined, so that precise regulation and efficient release of the internal stress of the SLM forming part are achieved, the mechanical strength of an additive forming product is effectively improved, meanwhile, the heat treatment process period is greatly shortened, and the production cost is reduced; and a new path is opened up for wide application of the high-strength aluminum alloy in the selective laser melting forming technology.

The invention relates to the field of manufacturing of optoelectronic devices, in particular to a photoelectric detector based on an erbium-phosphorus co-doped WS2 / Si2H van der Waals heterojunction, and a manufacturing method of the photoelectric detector comprises the following steps: growing an erbium-phosphorus co-doped WS2 material on a silicon wafer with an H bond attached on the surface by adopting a normal-pressure chemical vapor deposition method to obtain an erbium-phosphorus co-doped WS2 material sample; spin-coating a photoresist on an erbium-phosphorus co-doped WS2 material sample, fixing the sample, and reserving an electrode pattern on the sample through laser direct writing and developing operation; and coating a film on the reserved electrode pattern by adopting a magnetron sputtering technology, and carrying out photoresist removal operation on a coated sample to obtain the photoelectric detector based on the erbium-phosphorus co-doped WS2 / Si2H Van der Waals heterojunction. By constructing the WS2 / Si2H van der Waals heterojunction, the problem of lattice matching generally existing in a traditional epitaxial layered semiconductor is solved, and the optical frequency response range of the photoelectric detector is expanded by doping materials.

This invention provides a quasi-two-dimensional / two-dimensional van der Waals heterojunction based on SOI and Si / WS2, its preparation method, and its application. The method includes the following steps: cleaning the SOI substrate; using sulfur powder, tungsten oxide powder, sodium chloride powder as a catalyst, and erbium chloride and ytterbium chloride powder as dopants, chemical vapor deposition is performed on the SOI substrate to prepare an erbium- and ytterbium-doped monolayer WS2 material; the top silicon layer of the SOI substrate is an n-type silicon layer. This invention, employing the above-mentioned quasi-two-dimensional / two-dimensional van der Waals heterojunction based on SOI and Si / WS2, its preparation method, and its application, effectively reduces the defect density during material synthesis while significantly increasing the carrier concentration in the material. The prepared photodetector exhibits good photoelectric response performance, providing a simple and efficient new method for the preparation of high-performance heterojunction photodetectors.

The invention relates to a method for plasma-assisted sintering of calcium stannate short-wave infrared long afterglow powder, the chemical composition of the long afterglow powder is Ca2SnO4: xEr < 3 + > / Pr < 3 + > / Nd < 3 + >, and x is more than or equal to 0.1 and less than or equal to 1; the long afterglow powder takes calcium stannate as a matrix and is formed by doping and sintering rare earth capable of emitting red light. The sintering adopts a stir-frying plasma assisted low-temperature sintering method, compounds containing an erbium element, a praseodymium element and a neodymium element are doped, namely erbium trioxide, praseodymium trioxide and neodymium oxide, and H3BO3 is added as a fluxing agent to prepare a sample. The method is low in energy consumption, and the yield of the calcium stannate fluorescent powder is effectively improved; according to the invention, short-wave infrared long-afterglow luminescence of doped ions is realized, and the emission wavelength is adjustable from 800nm to 1600nm.

The application relates to a method of an electric field sensor based on an optoelectronic oscillator, belonging to the field of optical devices and optical fiber sensing. The device comprises a laser source, a polarization controller, a phase modulator, a fiber Bragg grating with an acrylate glue cavity, a stacked piezoelectric ceramic, an electric field generator, an erbium-doped fiber amplifier, a photodetector, a power divider and an electric amplifier. The stacked piezoelectric ceramic is combined with the fiber Bragg grating with the acrylate glue cavity as a sensing head, the wavelength change of the fiber Bragg grating with the acrylate glue cavity caused by the piezoelectric effect is mapped to the frequency change of the microwave signal generated by the optoelectronic oscillator, and the electric field change value can be obtained by monitoring the microwave signal of the optoelectronic oscillator. In the loop of the optoelectronic oscillator, the electric spectrum analysis technology is used for demodulation, and high-speed and high-resolution electric field measurement can be obtained. The method has the advantages of simple structure, high measurement sensitivity and easy practicability.

The invention relates to the field of bioanalytical chemistry and environmental monitoring, and discloses a nano fluorescent probe, a preparation method and application thereof, and a method for detecting microcystic toxins in liquid. The nano composite probe comprises an MOF material and nano particles loaded on the MOF material, the nano particles comprise carboxyl-modified up-conversion nano particles and nucleic acid aptamers covalently connected with the up-conversion nano particles through amido bonds, and the up-conversion nano particles contain a thulium element and an erbium element. The nano fluorescent probe has the advantages of high specificity, simplicity and rapidness in operation, high sensitivity, high interference resistance, simple preparation process and low cost, provides an efficient solution for rapid detection of liquid microcystin pollution, and has a remarkable market prospect.

The invention relates to a novel functional material for X-ray protection, in particular to a liquid metal flexible shielding material and a preparation method and application thereof. The material comprises liquid metal and solid metal, the liquid metal serves as a solvent to be filled in gaps of the solid metal, the liquid metal is gallium, gallium indium, gallium indium tin, gallium indium tin zinc or mercury, and the solid metal is selected from one or more of indium, tin, gold, platinum, iridium, zirconium, niobium, molybdenum, ruthenium, osmium, rhenium, rhodium, tungsten, antimony, palladium, tantalum, hafnium, lutetium, lead, ytterbium, thulium, bismuth, silver, erbium, holmium, dysprosium, terbium, gadolinium, samarium, neodymium, lanthanum, praseodymium, cerium and europium. On the basis of compounding of the liquid metal solvent and the solid metal solute based on the liquid metal combinatology, the liquid metal and the solid metal are jointly used for protecting X-ray radiation, the comprehensive performance of X-ray protection is improved, and meanwhile the variety and number range of selectable metal elements is widened.

The invention belongs to the technical field of hydrogen energy resources, and particularly relates to an oxide composite coating as well as a preparation method and application thereof. The oxide composite coating provided by the invention comprises a chromium layer, a chromium / chromium oxide composite layer, a chromium oxide layer, a chromium oxide / aluminum oxide composite layer, an aluminum oxide layer, an aluminum oxide / erbium oxide composite layer and an erbium oxide layer which are sequentially stacked, the mass percentage content of chromium in the chromium / chromium oxide composite layer is reduced in a gradient manner; the mass percentage content of chromium oxide in the chromium oxide / aluminum oxide composite layer is reduced in a gradient manner; the mass percentage content of aluminum oxide in the aluminum oxide / erbium oxide composite layer is reduced in a gradient manner. A composite transition layer with gradient composition change is introduced into the interface of the substrate / oxide layer and the interface of the oxide layer / oxide layer, so that the obvious interface is eliminated, and the interlayer bonding force is greatly improved. Chromium oxide, aluminum oxide and erbium oxide are all excellent hydrogen barrier materials, the multilayer structure and the interface thereof can effectively prolong the permeation path of hydrogen, and the hydrogen permeation barrier coefficient is improved.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The invention provides a silicon-erbium-doped lithium niobate photon calculation chip, which adopts a wafer-to-wafer bonding mode, realizes heterogeneous integration of silicon and erbium-doped lithium niobate, and integrates devices such as a gain type delay array, a gain type electro-optical modulator, an interlayer coupler, a waveguide cross junction, a silicon-based phase shift array and an end face coupler in a monolithic manner. Complicated inter-chip coupling technology and optical interconnection steps are not needed, and inter-chip coupling loss is effectively avoided. The advantages of optical amplification on an erbium-doped lithium niobate sheet are fully exerted, so that the gain type electro-optical modulator and loss type devices such as a waveguide gain type delay line have gain performance, optical loss on the sheet is further compensated, and meanwhile, the signal processing speed and the capacity of executing complex calculation tasks are remarkably improved. Meanwhile, the advantages of high integration level and mature process of silicon are exerted; the advantage of high-speed electro-optical modulation of lithium niobate is exerted, the limitation of a single material platform on the integration scale is broken through, and high-density integration of devices is achieved.

This application relates to the technical field of neodymium iron boron magnets, and specifically discloses a hydrogenated erbium corrosion-resistant neodymium iron boron magnet, a preparation method thereof, and a cylindrical magnet block made of the magnet. A hydrogenated erbium corrosion-resistant neodymium iron boron magnet includes a magnetic matrix and a corrosion-resistant layer coated on the surface of the magnetic matrix. The magnetic matrix includes the following components in weight percentage: praseodymium-neodymium alloy 15-29%; boron 5.2-6%; erbium 1-10%; copper 0-2%; zirconium 0-2%; cobalt 0-2%; niobium 0-2%; aluminum 0-2%; gallium 0-2%; the balance is iron. The hydrogenated erbium corrosion-resistant neodymium iron boron magnet of this application has the advantage of good corrosion resistance in a high-temperature environment.

A multilayer ceramic capacitor and a method of manufacturing the multilayer ceramic capacitor including a capacitor body including a dielectric layer and an internal electrode layer, and an external electrode disposed on an outer surface of the capacitor body, wherein the dielectric layer comprises a first element including at least one selected from cerium (Ce), gadolinium (Gd), samarium (Sm), and lanthanum (La); and a second element including at least one selected from erbium (Er), yttrium (Y), thulium (Tm), and ytterbium (Yb), and a molar ratio of the first element to the second element is 1.5 to 4.0.

The invention discloses a gold bonding wire and a preparation method and application thereof. The gold bonding wire comprises, by mass, 75%-85% of gold, 8.5%-10.2% of palladium, 0.08%-0.15% of yttrium, 0.02%-0.02% of erbium, 0.003%-0.01% of cerium and the balance silver and inevitable impurities. According to the invention, through component synergy and combination of a graded heat treatment-multi-section pulse ultrasonic wire drawing-precise annealing process, the problem of synchronous improvement of strength and toughness under gold content reduction is effectively solved. Palladium provides solution strengthening, rare earth elements synergistically refine grains, purify grain boundaries and perform precipitation strengthening, and the performance loss caused by gold reduction is made up. Precipitation and structure uniformity are regulated and controlled through graded heat treatment, work hardening is remarkably reduced through multi-section gradient power ultrasonic wiredrawing, high-toughness deformation is guaranteed, and the structure is accurately annealed and stabilized.

The application discloses a temperature measuring method and device for the internal flow channel of a heat exchanger. The method comprises the following steps: taking dysprosium and erbium co-doped quartz optical fiber as a temperature sensing element; exciting rare earth ions in the optical fiber to generate characteristic fluorescence; collecting dysprosium and erbium fluorescence signals; obtaining the fluorescence lifetime of dysprosium and comparing it with a characteristic threshold to obtain a temperature classification; based on the temperature classification, different segmented weighted fusion algorithms are respectively used to calculate the sensor temperature; when the temperature classification is consistent with the calculation result of the weighted fusion algorithm, the calculation result is output; when the temperature classification is not consistent with the calculation result of the weighted fusion algorithm, the calculation result is used to correct the temperature classification, and the segmented weighted fusion algorithm is called by using the corrected temperature classification to obtain a measured result. The application can improve the accuracy of temperature measurement.

The invention belongs to the technical field of glass optical fibers, and discloses a gadolinium aluminosilicate erbium-doped glass optical fiber and a preparation method and application thereof. The gadolinium aluminosilicate erbium-doped glass optical fiber comprises a fiber core and a cladding, and the fiber core is prepared from the following raw materials in mole percent: 50 to 78.5 percent of SiO2, 10 to 20 percent of Al2O3, 0.5 to 2.5 percent of Er2O3 and 1 to 30 percent of Gd2O3. The gadolinium aluminosilicate erbium-doped glass optical fiber is prepared by a fiber core melting method, has excellent mechanical properties and light guide properties, effectively solves the problems of low Er ion doping solubility and easy clustering of Er ions in traditional silica glass, can realize strong near-infrared luminescence of Er ions in the glass, and has a wide application prospect. The ion doping concentration is high, the maximum gain coefficient can reach 1.88 dB / cm, and the method can be applied to the field of optical amplifiers.

A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group including scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10−6 mol / min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.

The invention discloses a single-ended phi-OTDR (Optical Time Domain Reflectometer) disturbance detection system and method based on a far-end pumping erbium-doped optical fiber relay. The system is used for long-distance single-ended phi-OTDR distributed disturbance detection based on the far-end pumping erbium-doped optical fiber relay and a pumping energy bypass unit. Comprising a transmitting-end coherent light source and pulse generation link, a signal and pump multiplexing single-end transceiving link, a plurality of EDF relay and PPBU pump distribution links arranged along the line, and a receiving and digital signal processing link. PPBU pumping allocation links are introduced among the multiple EDF sections, and residual pumping of the previous EDF section is bypassed to the next EDF section in proportion through a high-power 1 * 2 low-insertion-loss coupler and a high-isolation WDM (Wavelength Division Multiplexing), which is the bypass proportion of the kth PPBU. According to the method, the PPBU (pump energy bypass unit) is used for carrying out interpretable, computable and online correctable bypass distribution and constraint optimization on the pump energy of the multi-section EDF, and unification of high SNR (signal to noise ratio), low nonlinear risk and robust engineering implementability is realized from the system level.

Solution synthesis of rare-earth-doped nanoparticles, followed by flash sintering of the nanoparticles, can produce rare-earth-doped transparent polycrystalline ceramics with beneficial optical and / or mechanical properties, such as low optical losses, high optical coherence, high refractive-index controllability, and / or high mechanical strength. In one example application, high-quality erbium-doped yttria for quantum memory devices can be fabricated.

The application discloses a kind of high-power laser seed sources for multimodal medical imaging based on germanium saturable absorber, it is characterized in that, including first pump light source, second pump light source and laser resonator, the laser resonator is by first wave division multiplexer, second wave division multiplexer, erbium-doped optical fiber, polarization controller, polarization independent isolator, germanium saturable absorber, single-mode optical fiber, optical coupler sequentially connected, the first pump light source is connected with first wave division multiplexer, and second pump light source is connected with second wave division multiplexer.The germanium saturable absorber prepared in the application has good self-starting effect on pulse, the preparation method is simple, and the preparation cost is not high.And the stability of the obtained saturable absorber is good, and it can be used for passive mode locking for a long time.

The invention provides a fluorescent zirconia composition and a preparation method and application of a fluorescent zirconia porcelain block. The fluorescent zirconium oxide composition is prepared from the following components in percentage by mass: 90 to 95 percent of inorganic powder, 3 to 10 percent of organic matter and 1 to 5 percent of fluorescent component. Wherein the inorganic powder comprises zirconium oxide, hafnium oxide, aluminum oxide, yttrium oxide, titanium oxide and manganese oxide. The organic matter comprises a dispersing agent, an adhesive, a plasticizer and a defoaming agent. The fluorescent component comprises cerium oxide, iron oxide and erbium oxide. Through mutual cooperation of the components, the obtained fluorescent zirconia ceramic block has a fluorescent effect and enhanced toughness at the same time. Moreover, the preparation method disclosed by the invention is simple, convenient to operate and suitable for large-scale industrial production.