273 results about "Erbium" patented technology

The invention belongs to the technical field of active optical fibers, and particularly relates to an anti-radiation erbium-ytterbium co-doped optical fiber core rod, a preform, an optical fiber and a preparation method thereof. The rare earth doped core rod of the anti-radiation erbium-ytterbium co-doped optical fiber provided by the invention comprises a rare earth doped fiber core and a step layer wrapping the fiber core, and the step layer contains a rare earth co-doped substance Ce2O3 and / or Nb2O5 besides a substrate SiO2 and co-doped substances GeO2 and P2O5. The variable-valence rare earth co-doped substance is doped in the step layer, part of rays are absorbed in advance in the Ce < 4 + > / Ce < 3 + > and / or Nb < 5 + > / Nb < 3 + > variable-valence balance process, the anti-radiation performance of the step layer is improved, part of rays are isolated in advance through the step layer to protect the fiber core, and then the overall anti-radiation performance of the optical fiber is improved.

The utility model discloses a vacuum feeding machine for erbium oxide processing, which comprises a box body, the bottom of the box body is fixedly connected with a plurality of uniformly distributed support rods, the right end of the box body is internally and fixedly connected with a feed port, the lower end of the box body is internally and fixedly connected with a discharge port, the upper end of the box body is in contact with a sealing gasket, and the lower end of the box body is in contact with the discharge port. The top of the sealing gasket is fixedly connected with a cover plate, and the lower end of the cover plate is fixedly connected with a positioning block. According to the feeding device, the air pump is designed to suck the interior of the box body, so that a negative pressure state is formed in the box body, then materials are sucked through the feeding port, then air flows upwards, the materials can be discharged through the discharging port for feeding, in the feeding process, the air flows through the fixing base, and the feeding efficiency is improved. Gas can only flow upwards in one direction to be output, dust can enter the space between the partition plate and the filter plate, and the problem that dust falls into the box body and is inconvenient to clean and collect subsequently can be solved.

The invention relates to the technical field of tungsten alloy materials, in particular to a tungsten alloy wire, a preparation method thereof and application of the tungsten alloy wire in semiconductor material cutting, and tungsten alloy is composed of the following elements of, by mass, 0.4-1.1 wt% of L, 0.001-0.25 wt% of Z and the balance tungsten and inevitable impurities. Wherein L is one or more than two of lanthanum, cerium, praseodymium, neodymium, gadolinium and erbium; z comprises oxygen and boron; the wire rod has a wire diameter of 20-60 [mu] m, the wire rod has a linear L or L compound in the axial direction, and the radial average width D of the L or L compound is less than or equal to 5 nm. The linear element L is doped between the tungsten matrixes, and the radial average width of the element L is controlled to be smaller than or equal to 5 nm, so that the wire has the tensile strength of 5000 MPa or above under the wire diameter of 20-60 microns, and the machining performance of the tungsten alloy wire is enhanced.

The invention provides a satellite-borne EDFA on-orbit performance degradation monitoring method and system. The satellite-borne EDFA on-orbit performance degradation monitoring method comprises the steps that a health baseline is preset; closing input light and a first-stage pump of the satellite-borne EDFA; driving a second-stage pump of the satellite-borne EDFA to maintain fixed power output, and recording the working temperature of the second-stage pump; acquiring the monitoring optical power of the second-stage pump and the spontaneous radiation power of the output end of the satellite-borne EDFA; calculating to obtain spontaneous radiation conversion rate; and carrying out satellite-borne EDFA degradation determination. The method has the beneficial effects that the interference of temperature fluctuation on a monitoring result is greatly reduced through the spontaneous radiation conversion rate which is a relative parameter, and the method is adaptive to a complex thermal environment of a satellite; degradation is judged based on a preset health baseline, precise monitoring of the performance state of the satellite-borne EDFA is achieved, and a reliable basis is provided for maintenance. Precise positioning of a degraded part is realized, a fault source is clear, blind maintenance is avoided, and the maintenance efficiency is improved; monitoring can be completed in a second level and can be arranged to be carried out in a communication intermittent period, and normal communication service of the satellite is not affected.

The invention discloses a method for determining the content of trace holmium, thulium and tungsten in rare earth erbium and a compound thereof, which comprises the following steps: placing a rare earth erbium and compound sample thereof in a beaker, and performing a blank test along with a sample; adding nitric acid, heating at low temperature until the sample is completely dissolved, and cooling; transferring into a volumetric flask, adding a cesium internal standard solution, diluting with water, and uniformly mixing; the holmium, the thulium and the tungsten are measured by using an oxygen mode of an inductively coupled plasma tandem mass spectrometer, and the contents of the holmium, the thulium and the tungsten are calculated according to a working curve method. According to the method, the inductively coupled plasma tandem mass spectrometry technology is used, and mass spectrum interference of an erbium matrix on holmium, thulium and tungsten is effectively eliminated by selecting a proper reaction mode and optimizing the flow of reaction gas.

The invention discloses a solution-treatable linear polarization low-threshold polarization laser light source and a preparation method thereof, and the preparation method comprises the following steps: mixing cesium carbonate and oleic acid, heating to 100-130 DEG C in an inert atmosphere, carrying out heat preservation for 20-40 min, after reactants are completely dissolved, heating to 140-160 DEG C, and carrying out heat preservation for 10-30 min to obtain a precursor solution A; mixing the precursor solution A, erbium acetate, yttrium acetate, bismuth acetate, silver acetate, sodium oleate, octadecene, 4-chlorobutyric acid and oleylamine according to a set proportion, standing for a set time in an inert atmosphere, stirring and heating to 90-110 DEG C, preserving heat for 0.5-1.5 h, heating to 130-150 DEG C after reactants are completely dissolved, injecting benzoyl chloride, reacting for 1-5 minutes, cooling, and stopping reaction; carrying out solid-liquid separation on the obtained mixed solution, cleaning the quantum dots, then dispersing the quantum dots in a dispersing solvent, adding PHPS into the dispersing solvent, and carrying out ultrasonic mixing; and after the PHPS is fully hydrolyzed, coating a silicon oxide sheet with the solution to prepare a film.

The invention relates to the technical field of tungsten alloy materials, in particular to a tungsten alloy wire, a preparation method thereof and application of the tungsten alloy wire in semiconductor material cutting, and tungsten alloy is composed of the following elements of, by mass, 0.4-1.1 wt% of L, 0.001-0.25 wt% of Z and the balance tungsten and inevitable impurities. Wherein L is one or more than two of lanthanum, cerium, praseodymium, neodymium, gadolinium and erbium; z comprises oxygen and carbon; the wire rod has a wire diameter of 20-60 [mu] m, the wire rod contains a linear L or L compound in the axial direction, and the average radial width D of the L or L compound is less than or equal to 5 nm. The linear element L is doped between the tungsten matrixes, and the radial average width of the element L is controlled to be smaller than or equal to 5 nm, so that the wire has the tensile strength of 5000 MPa or above under the wire diameter of 20-60 microns, and the machining performance of the tungsten alloy wire is enhanced.

The invention relates to the technical field of optical amplifiers, in particular to an optical amplifier based on QSFP-DD packaging. The optical amplifier comprises a packaging shell, a circuit board, an optical assembly and a heating piece. The circuit board is arranged in the packaging shell, and a connecting module is arranged at one end, penetrating out of the shell, of the circuit board; the optical assembly comprises an erbium-doped optical fiber which is located in the packaging shell and arranged on one side of the circuit board in the thickness direction; the heating element is arranged in the packaging shell and is positioned between the erbium-doped optical fiber and the circuit board; wherein the circuit board is electrically connected to the heating element, and the heating element acts on the Er-doped optical fiber so as to adjust the temperature of the Er-doped optical fiber. The optical amplifier based on QSFP-DD packaging is smaller in size, can meet the arrangement requirement of a high-density data center cabinet, and is more stable in transmission performance during working.

The invention discloses a transparent heat-insulating coating based on up-conversion luminescent nanoparticles as well as a preparation method and application thereof, and belongs to the technical field of inorganic polymer materials. The coating comprises the following raw materials in parts by weight: 100-150 parts of a substrate coating, 5-10 parts of a dispersing aid and 0.5-3 parts of up-conversion luminescent nanoparticles. Traditional inorganic nanoparticles are changed, zinc oxide (ZnO), tin oxide (SnO), gallium oxide (Ga2O3), ytterbium oxide (Yb3O4) and erbium oxide (Er2O3) are used for forming functional components, and the functional components are matched with one another, so that the light-transmitting and heat-insulating coating with low nanoparticle addition amount is constructed. By adding a small amount of up-conversion nanoparticles into the coating, the application range of the up-conversion material is expanded, the blank of application of the material in research in the field of building coatings is filled, the performance of a traditional transparent heat-insulating coating is improved through the up-conversion luminescent material, and the light-transmitting heat-insulating performance of a paint film is greatly improved.

The invention discloses a high-strength and high-thermal-conductivity magnesium alloy plate and a preparation method thereof, and relates to a high-strength and high-thermal-conductivity rolled magnesium alloy and a preparation method thereof. The magnesium alloy comprises the following components in percentage by mass: 1.0-7.0% of element Zn, 0.2-2.0% of element Mn, 1.5-7.0% of element X and the balance of Mg, and the element X is one or more than two of yttrium, gadolinium, neodymium or erbium. Pure Mg ingots, Mg-Zn intermediate alloy, Mg-Mn intermediate alloy and Mg-X intermediate alloy serve as raw materials and are smelted into high-quality cast ingots, and the high-strength and high-thermal-conductivity magnesium alloy plate is obtained through homogenizing heat treatment and hot rolling deformation. The tensile yield strength of the prepared rolled magnesium alloy can reach 340-370 MPa, the tensile strength is 360-400 MPa, the ductility is 5%-10%, the room-temperature heat conductivity is 130-140 W / (m.K), meanwhile, the excellent mechanical property and heat-conducting property are achieved, and the rolled magnesium alloy can be used as structural materials of electronic devices such as aerospace and satellite radar antennas.

The invention discloses an on-chip integrated laser source and a preparation method thereof. According to the on-chip erbium-doped laser source, tantalum oxide doped with rare earth ions serves as a gain dielectric layer, tantalum oxide not doped with rare earth ions serves as a waveguide layer to be deposited on the gain dielectric layer to form a double-layer thin film structure, and then an Euler bent micro-ring resonant cavity structure is designed and prepared on the undoped layer. Compared with a conventional micro-ring resonant cavity prepared on a rare earth doped film, the Euler micro-ring designed in the invention not only can reduce scattering loss and high-order mode crosstalk in a wide waveguide, but also can avoid roughness caused by conventional direct etching of a rare earth ion doped film layer.

The invention discloses lead-free halogen double perovskite near-infrared fluorescent powder and a preparation method thereof, and the chemical general formula of the fluorescent powder is Cs2M1-x-yCl6: xPt < 4 + >, yEr < 3 + >, wherein M is any one of Zr, Sn and Hf, and 0 lt; x is less than or equal to 0.02, 0lt; y < = 0.35. The preparation method comprises the following steps: adding an erbium acetate solution into a platinum tetrachloride solution, and sealing and stirring; adding the obtained solution into an MCl4 solution, and sealing and stirring at 50-70 DEG C; adding a cesium chloride solution, sealing and stirring at 40-60 DEG C, and after the solution is cooled to room temperature, carrying out centrifugal separation and centrifugal washing; and drying at 40-60 DEG C, and cooling. The emission peak of the obtained fluorescent powder Pt < 4 + > well covers the excitation peak of Er < 3 + >, energy is effectively transmitted to a light-emitting center Er < 3 + >, and the light-emitting efficiency of Er < 3 + > is remarkably improved; strong absorption is realized in ultraviolet, near ultraviolet and blue light areas.

The invention discloses a rare earth doped upconversion single near-infrared luminescent scandium molybdate material and a preparation method thereof, and belongs to the technical field of luminescent materials. The structural formula of the up-conversion near-infrared luminescent material provided by the invention is (Sc < 1-x-y > Yb < x > Er < y >) < 2 > Mo < 3 > O < 12 >, x is equal to 0.1 to 0.3, and y is equal to 0.005 to 0.04. The preparation method is a high-temperature solid-phase method and comprises the following steps: weighing scandium oxide, ytterbium oxide, erbium oxide and molybdenum oxide as raw materials according to stoichiometry, uniformly mixing with absolute ethyl alcohol, drying, sufficiently grinding, pressing into sheets, presintering at 800 DEG C in a muffle furnace, heating to 1100 DEG C, and carrying out high-temperature solid-phase sintering. The prepared rare earth doped scandium molybdate up-conversion luminescent material has excellent near-infrared luminescence performance, and the regulation and control of the luminescence intensity can be realized by adjusting the rare earth doping proportion. Meanwhile, the preparation method is good in repeatability, high in yield, simple and feasible in preparation process, more energy-saving and environment-friendly in preparation process and suitable for industrial popularization.

The present invention designs a high-strength aluminum-erbium alloy for additive manufacturing and a preparation method thereof. The alloy contains: 4-20wt% erbium (Er); 2-10wt% magnesium (Mg); less than or equal to 1wt% manganese (Mn); optionally, 0-1wt% scandium (Sc); optionally, 0-1wt% zirconium (Zr). The present invention aims to simultaneously improve the alloy's forming performance and mechanical properties. Based on the phase diagram calculation method to assist in alloy composition design, the Al-Er eutectic system is selected, the solidification range is reduced, and a fine-grained phase is formed, thereby achieving the technical effects of refined structure, no thermal cracks, and excellent printing performance. In particular, a continuous cellular L12Al3Er eutectic network structure with plastic deformation ability is introduced, with a size of hundreds of nanometers, which is both strengthened and toughened. The aluminum-erbium alloy has both excellent print formability and comprehensive mechanical properties, and the preparation method is mature, low-cost, and highly efficient, and can be produced on a large scale industrially.

Dipole engineering techniques for devices of stacked device structures are disclosed herein. An exemplary method for forming a gate stack of a transistor (e.g., a top transistor) of a transistor stack includes forming a high-k dielectric layer, forming an n-dipole dopant source layer over the high-k dielectric layer, performing a thermal drive-in process that drives an n-dipole dopant from the n-dipole dopant source layer into the high-k dielectric layer, and forming at least one electrically conductive gate layer over the high-k dielectric layer after removing the n-dipole dopant source layer. A drive-in temperature of the thermal drive-in process is less than 600° C. (e.g., about 300°° C. to about 500°° C.). The n-dipole dopant is strontium, erbium, magnesium, or a combination thereof. The method can further include tuning thermal drive-in process parameters to provide the gate dielectric with an n-dipole dopant profile having a peak located at a high- k / interfacial interface ±0.5 nm.

The invention provides a red light perovskite material based on bromine-iodine mixed halogen and a preparation method thereof, the red light perovskite material comprises a perovskite material doped with metal elements, the structural formula of the perovskite material is CsPbIxBr3-x, and X is more than 0 and less than 3; the doped metal element is one or more of zinc, potassium, aluminum, magnesium, calcium, strontium, barium, sodium, rubidium, lithium, cerium, samarium, antimony, erbium and bismuth; wherein the atomic percent of the cesium element is smaller than or equal to 21%, and the atomic percent of the doped metal element is larger than or equal to 10%; the red-light perovskite material only has one light-emitting peak, and the light-emitting spectrum does not move or deform under the irradiation of blue light. The prepared perovskite material is uniform in component and free of ion migration.

The present invention relates to the field of nanomaterial synthesis, and discloses an upconversion luminescent material, a preparation method thereof, and an application thereof. The preparation method of the upconversion luminescent material comprises: (1) first stirring an ytterbium salt solution, an ammonium molybdate tetrahydrate solution, and a rare earth metal salt solution to obtain an intermediate I; the rare earth metal salt in the rare earth metal salt solution is selected from at least one of an erbium salt, a holmium salt, a praseodymium salt, and a europium salt; (2) subjecting the intermediate I to a hydrothermal reaction in a hydrothermal reactor to obtain an intermediate II; and (3) sequentially subjecting the intermediate II to a drying treatment and a calcination treatment to obtain the upconversion luminescent material. The upconversion luminescent material particles prepared by the method of the present invention have an average particle size of nanometer level, a good degree of crystallinity, and good reverse thermal quenching performance.

The invention discloses an erbium-doped aluminum oxide and silicon nitride heterogeneous integrated on-chip optical amplifier and an integration method thereof. The amplifier is composed of a straight waveguide, an interlayer coupling waveguide and a bent waveguide. The erbium-doped aluminum oxide-silicon nitride heterogeneous integrated waveguide is formed by adopting the processes of low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, oxidation and etching, radio frequency reaction magnetron sputtering, chemical mechanical polishing and the like. According to the structure, signal light pump light is transmitted in the silicon nitride waveguide with the small mode field area in the bent waveguide, so that the compactness of the device is ensured; signal light pump light is coupled into an aluminum oxide strip waveguide with a large mode field area in a straight waveguide area, so that mode field overlapping of 980nm pump light and 1550nm pump light is improved, and amplification of the large mode field area is realized. According to the invention, large-mode-area on-chip optical waveguide amplification of 980nm pump light pumping is realized, and the large-mode-area on-chip optical waveguide amplification device has a wide application prospect in the field of integrated photoelectronics and the field of optical communication.

The present invention relates to the field of magnetic functional materials. The present invention discloses a use of a rare earth fluoride single crystal in magnetic refrigeration, a magnetic refrigeration method and a magnetic refrigeration device. A magnetocaloric material of the series is lithium rare earth fluoride, with the chemical formula of LiREF4, wherein RE is one or more of rare earth elements gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium. A magnetocaloric material single crystal of the series has extremely strong magnetic anisotropy. By applying a varying magnetic field of 0-20 kOe along the easy magnetization axis direction of the magnetocaloric material, LiGdF4, LiTbF4, LiHoF4, LiDyF4, LiErF4, LiYbF4 and LiTmF4 obtained isothermal magnetic entropy changes of 50.35 J·kg−1·K−1, 21.12 J·kg−1·K−1, 24.98 J·kg−1·K−1, 24.45 J·kg−1·K−1, 21.95 J·kg−1·K−1, 14.7 J·kg−1·K−1 and 0.692 J·kg−1·K−1, respectively, at 1.8K, 4K, 4K, 1.8K, 1.8K, 1.8K, and 18K. Wherein, the thermal conductivity of LiTbF4 and LiErF4 reaches 50 W·K−1·m−1 at 25K.

The invention discloses a series of high-stability negative temperature coefficient heat-sensitive materials based on seven-principal-element high-entropy rare earth stannate and application, and aims to solve the problem that existing stannate heat-sensitive materials with pyrochlore structures cannot meet long-term application in high-temperature environments. The series of heat-sensitive materials are prepared by mixing lanthanum trioxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, dysprosium oxide and tin dioxide with erbium oxide or ytterbium oxide respectively, and the preparation process comprises the steps of wet three-dimensional vibration ball milling, powder calcination, cold isostatic pressing, high-temperature sintering and the like. And finally obtaining the negative temperature coefficient heat-sensitive material with the pyrochlore structure. The electrical property parameters of the series of materials are as follows: B is equal to 13914-14067 + / -1.89% K, and rho 1500 DEG C is equal to 180.26-204.09 + / -1.38% omega.cm. The negative temperature coefficient heat-sensitive material has the negative temperature coefficient characteristic in the wide temperature range of 400-1500 DEG C and shows excellent high-temperature aging stability under the high-temperature condition of 1500 DEG C, and the resistance drift rate of the negative temperature coefficient heat-sensitive material is only 0.7% after an aging test for 500 hours.

The invention discloses a modification method of a ternary positive electrode material. The modification method comprises the following steps: S1, carrying out a co-precipitation reaction on a solution of transition metal sulfate in an inert gas atmosphere; a sulfate solution of rare earth elements is synchronously added in the coprecipitation process, and a ternary precursor with the surface coated with rare earth hydroxide is formed; and S2, mixing the ternary precursor obtained in the step S1 with a lithium source, calcining in an air atmosphere, and cooling to obtain the fast ion conductor coated ternary positive electrode material, the rare earth elements are selected from one or more of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium; the transition metal sulfate is soluble salt of Ni, Co and Mn. The rare earth element sulfate is added in the coprecipitation process, the rare earth element hydroxide is precipitated on the surface of the precursor, the lithium source is removed after filtering and drying, uniform mixing is performed, and the ternary positive electrode material which contains the rare earth element and is uniformly coated with the fast ion conductor is obtained after calcination, so that side reactions on the surface of the material are reduced; and the cycling stability of the positive electrode material is improved.

The invention provides an erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material and a preparation method thereof, and belongs to the technical field of crossing of functional ceramic materials and optical sensing technologies, the erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material comprises a matrix phase and doped ions, the matrix phase is Al2O3-YAG (aluminum oxide-yttrium aluminum garnet) composite ceramic; wherein the mass ratio of Al2O3 is 30%-70%, and the mass ratio of YAG is 30%-70%; the doping ions are Er < 3 + > and Yb < 3 + >, and based on the total molar weight of the matrix phase, the doping concentration of Er < 3 + > is 0.5-3 mol%, and the doping concentration of Yb < 3 + > is 5-20 mol%; the sensing material realizes temperature sensing under the excitation of 980 nm laser and on the basis of the energy level emission conditions of 2H11 / 2 to 4I15 / 2 and 4S3 / 2 to 4I15 / 2 of Er < 3 + >. The Al2O3-YAG composite ceramic is used as an Er < 3 + > / Yb < 3 + > doped matrix for optical temperature measurement for the first time, and the high-temperature stability is superior to that of fluorescent powder and glass materials; the mechanical strength and the thermal shock resistance are obviously improved; elements are uniformly distributed, and the concentration quenching effect is avoided.

The invention discloses erbium-containing high-strength aluminum alloy powder suitable for selective laser melting forming and a technological method of the erbium-containing high-strength aluminum alloy powder, and belongs to the technical field of additive manufacturing. The erbium-containing high-strength aluminum alloy powder prepared through specific component design is used for additive manufacturing, and according to the unique layered structure and stress distribution characteristics of an SLM forming part, the erbium-containing high-strength aluminum alloy powder is prepared; the spraying mode of the quenching liquid and the formed temperature gradient are designed in a targeted mode, and the specific quenching liquid is combined, so that precise regulation and efficient release of the internal stress of the SLM forming part are achieved, the mechanical strength of an additive forming product is effectively improved, meanwhile, the heat treatment process period is greatly shortened, and the production cost is reduced; and a new path is opened up for wide application of the high-strength aluminum alloy in the selective laser melting forming technology.

The invention relates to the field of manufacturing of optoelectronic devices, in particular to a photoelectric detector based on an erbium-phosphorus co-doped WS2 / Si2H van der Waals heterojunction, and a manufacturing method of the photoelectric detector comprises the following steps: growing an erbium-phosphorus co-doped WS2 material on a silicon wafer with an H bond attached on the surface by adopting a normal-pressure chemical vapor deposition method to obtain an erbium-phosphorus co-doped WS2 material sample; spin-coating a photoresist on an erbium-phosphorus co-doped WS2 material sample, fixing the sample, and reserving an electrode pattern on the sample through laser direct writing and developing operation; and coating a film on the reserved electrode pattern by adopting a magnetron sputtering technology, and carrying out photoresist removal operation on a coated sample to obtain the photoelectric detector based on the erbium-phosphorus co-doped WS2 / Si2H Van der Waals heterojunction. By constructing the WS2 / Si2H van der Waals heterojunction, the problem of lattice matching generally existing in a traditional epitaxial layered semiconductor is solved, and the optical frequency response range of the photoelectric detector is expanded by doping materials.

This invention provides a quasi-two-dimensional / two-dimensional van der Waals heterojunction based on SOI and Si / WS2, its preparation method, and its application. The method includes the following steps: cleaning the SOI substrate; using sulfur powder, tungsten oxide powder, sodium chloride powder as a catalyst, and erbium chloride and ytterbium chloride powder as dopants, chemical vapor deposition is performed on the SOI substrate to prepare an erbium- and ytterbium-doped monolayer WS2 material; the top silicon layer of the SOI substrate is an n-type silicon layer. This invention, employing the above-mentioned quasi-two-dimensional / two-dimensional van der Waals heterojunction based on SOI and Si / WS2, its preparation method, and its application, effectively reduces the defect density during material synthesis while significantly increasing the carrier concentration in the material. The prepared photodetector exhibits good photoelectric response performance, providing a simple and efficient new method for the preparation of high-performance heterojunction photodetectors.

The invention relates to a method for plasma-assisted sintering of calcium stannate short-wave infrared long afterglow powder, the chemical composition of the long afterglow powder is Ca2SnO4: xEr < 3 + > / Pr < 3 + > / Nd < 3 + >, and x is more than or equal to 0.1 and less than or equal to 1; the long afterglow powder takes calcium stannate as a matrix and is formed by doping and sintering rare earth capable of emitting red light. The sintering adopts a stir-frying plasma assisted low-temperature sintering method, compounds containing an erbium element, a praseodymium element and a neodymium element are doped, namely erbium trioxide, praseodymium trioxide and neodymium oxide, and H3BO3 is added as a fluxing agent to prepare a sample. The method is low in energy consumption, and the yield of the calcium stannate fluorescent powder is effectively improved; according to the invention, short-wave infrared long-afterglow luminescence of doped ions is realized, and the emission wavelength is adjustable from 800nm to 1600nm.

The application relates to a method of an electric field sensor based on an optoelectronic oscillator, belonging to the field of optical devices and optical fiber sensing. The device comprises a laser source, a polarization controller, a phase modulator, a fiber Bragg grating with an acrylate glue cavity, a stacked piezoelectric ceramic, an electric field generator, an erbium-doped fiber amplifier, a photodetector, a power divider and an electric amplifier. The stacked piezoelectric ceramic is combined with the fiber Bragg grating with the acrylate glue cavity as a sensing head, the wavelength change of the fiber Bragg grating with the acrylate glue cavity caused by the piezoelectric effect is mapped to the frequency change of the microwave signal generated by the optoelectronic oscillator, and the electric field change value can be obtained by monitoring the microwave signal of the optoelectronic oscillator. In the loop of the optoelectronic oscillator, the electric spectrum analysis technology is used for demodulation, and high-speed and high-resolution electric field measurement can be obtained. The method has the advantages of simple structure, high measurement sensitivity and easy practicability.

A method and a system for transmission of optical signals. One or more first and second multi-core optical components are coupled to all fiber cores in a multi-core fiber. An erbium-doped fiber amplifier (EDFA) optical component is coupled to all fiber cores in the multi-core fiber and includes a plurality of EDFAs. Each fiber core is coupled to an EDFA. The EDFA optical component is coupled to all fiber cores between the first and second multi-core optical components. First multi-core components are coupled at an input to a first portion of fiber cores and provide first functions, and are coupled at an output from a second portion of fiber cores and provide second functions. Second multi-core components are coupled at an output from the first portion of fiber cores and provide second functions, and are coupled to an input to the second portion of fiber cores and provide first functions.

The invention relates to the field of bioanalytical chemistry and environmental monitoring, and discloses a nano fluorescent probe, a preparation method and application thereof, and a method for detecting microcystic toxins in liquid. The nano composite probe comprises an MOF material and nano particles loaded on the MOF material, the nano particles comprise carboxyl-modified up-conversion nano particles and nucleic acid aptamers covalently connected with the up-conversion nano particles through amido bonds, and the up-conversion nano particles contain a thulium element and an erbium element. The nano fluorescent probe has the advantages of high specificity, simplicity and rapidness in operation, high sensitivity, high interference resistance, simple preparation process and low cost, provides an efficient solution for rapid detection of liquid microcystin pollution, and has a remarkable market prospect.

The invention relates to a process for manufacturing a radiation protection device intended to visualize the interaction with ionizing radiation, characterized in that the process consists in mixing a mass fraction between 0.04 and 0.5 of scintillating material emitting in the visible spectrum for excitations by energy radiation greater than 1 Kev, in powder form of a lanthanide, gadolinium or erbium oxysulfide, with a binder consisting of a resin, a gel, a gelatin or silicone.