19 results about "Reaction layer" patented technology

A method for forming a semiconductor device provides a substrate having a patterned structure containing a semiconductor material, wherein the patterned structure has a side profile including depressions, such as a patterned film stack, and a spacer layer conformally deposited on and within the depressions of the patterned structure; and a reaction layer formed on the spacer layer by reacting the surface of the spacer layer with a plasma-excited first etching gas, wherein the plasma-excited first etching gas contains fluorine, hydrogen, and nitrogen to form the reaction layer, and at least a portion of the reaction layer is removed by ion bombardment caused by exposure to a plasma-excited second etching gas. The spacer layer may be SiOCN. The reaction layer may be ammonium silicofluoride. The first etching gas may contain SF6, H2, and N2, or NF3, H2, and N2. The reaction and removal may be carried out at room temperature in the same chamber.

The application discloses a brazing filler metal for titanium alloy and stainless steel connection and application thereof, and the brazing filler metal comprises an Ag-Cu eutectic brazing filler metal base and NiTi alloy particles. By introducing the NiTi alloy particles into the Ag-Cu eutectic brazing filler metal base, the Ni and Ti in the interface neighborhood are cooperatively involved in diffusion and reaction, the wetting and forming consistency of the brazing filler metal are cooperatively improved, the interface reaction layer is formed into a discrete thin layer, the continuous brittle reaction layer is inhibited from being generated, the risk of crack propagation along the interface is reduced, the shear strength of the brazing filler metal welding joint for titanium alloy and stainless steel connection is remarkably improved, and the forming quality and batch consistency of the brazing joint are improved.

This utility model belongs to the technical field of lubricating oil additive production equipment. Specifically, it discloses a reaction device for producing lubricating oil additives. The reaction tank is equipped with a stirring shaft, and the stirring shaft is fixedly connected from top to bottom with a paddle stirring blade, a double spiral stirring blade, and a turbine stirring blade. A processing box is fixedly connected to the top of the condenser, and a condenser tube is installed inside. A water pipe is sleeved on the outside of the straight part of the condenser tube, and a spiral guide plate is installed on the straight part inside. A vertically arranged reaction layer is fixedly connected in the second chamber, and several horizontally arranged activated carbon layers are fixedly connected in the first chamber. A liquid outlet pipe is fixedly connected to the bend at the lower end of the condenser tube. This utility model makes the reaction more uniform by setting three different stirring blades. By setting the condenser tube, reaction layer, and activated carbon layer, harmful gases can be purified multiple times to avoid environmental pollution.

This invention relates to the field of nanomaterials technology, and discloses a vanadate composite material, its preparation method, and its application. A reaction solution containing a surfactant is prepared to generate bubbles. These bubbles then act as soft templates under rapid stirring and heating. Vanadium oxide is dispersed in this reaction solution and reacted at a specific temperature for a certain time, allowing the surfactant to intercalate the vanadium oxide, transforming it into vanadate. The surfactant then coats the outer surface of the vanadate, resulting in an in-situ surface-modified vanadate composite material. The surfactant layer of this composite material can regulate the reaction layer between the electrode surface and the electrolyte, preventing electrode material dissolution or structural collapse during the electrochemical reaction process, thus significantly improving the performance of electrochemical energy storage devices. The foaming effect of the surfactant ensures that the bubbles are uniformly dispersed in the liquid, acting as soft templates for the attachment and growth of vanadate crystals.

An expiration date indicator includes a first protective sheet that prevents oxygen intrusion, an oxygen transmission film disposed beneath the first protective sheet, wherein the oxygen transmission film is composed of a plurality of separable layers, a reaction layer disposed beneath the oxygen transmission film, wherein the reaction layer reacts with oxygen and changes color, a support layer disposed beneath the reaction layer, wherein the support layer is formed of an adhesive material, and a second protective sheet disposed beneath the support layer and preventing deterioration of the support layer.

The invention discloses a method for reducing appearance marks on a copper surface after AMB solder etching, and the method comprises the following specific steps: S1, pressing and cutting a high-purity oxygen-free copper strip into a copper foil with the same size as supplied ceramic, and carrying out surface treatment; s2, stacking the high-purity oxygen-free copper strip and the ceramic for welding; s3, before silk-screen printing, the active metal brazing filler metal is taken out of the environment at the temperature below zero and placed at the room temperature for a period of time, and bubbles in the brazing filler metal are removed; s4, the active metal solder is combined with the high-purity oxygen-free copper strip and the ceramic substrate, and a reaction layer capable of being wetted by the liquid solder is generated; s5, performing chemical etching on the copper on the surface of the ceramic; s6, the preparation ratio of the hydrogen peroxide to the ammonia water to the EDTA-2Na is 13L: 10L: 1260g; s7, cutting the ceramic substrate; according to the method, the problem of copper surface corrosion is solved, the operation time is shortened, and the productivity is improved.

The invention provides a plasma processing method capable of constructing a self-limited process excellent in mass productivity in a cycle etching method in which an adsorption step of forming a reaction layer on a surface of an etching target wafer and a desorption step of removing the formed reaction layer using a rare gas in a metastable state are repeated. The plasma processing method includes: an adsorption step of forming a reaction layer on an etching target film by plasma generated using a reactive gas; and a desorption step of removing the reaction layer using the rare gas in the metastable state generated by the plasma. The adsorption step and the desorption step are repeated, and a pressure of the adsorption step is higher than a pressure of the desorption step.

The application relates to a method for connecting sapphire and porous Si3N4 ceramic by using gradient ZBS microcrystalline glass solder, and relates to a method for connecting sapphire and porous Si3N4 ceramic by using microcrystalline glass solder. The application aims to solve the problem of thermal stress caused by the excessively large difference in thermal expansion coefficient between sapphire and porous Si3N4 ceramic base materials. The application successfully realizes the effective connection of sapphire and porous Si3N4 ceramic under the condition of argon by using gradient thermal expansion microcrystalline glass solder, forms a composite gradient thermal expansion intermediate layer, the whole joint is dense, the solder is well combined with the two side base materials, a reaction layer is formed at the sapphire interface to realize excellent connection, an infiltration layer is formed at the porous Si3N4 ceramic side to realize excellent connection, and the overall joint has relatively excellent mechanical properties. After being heated to 760 DEG C under the argon atmosphere and kept for 30 min, the room-temperature mechanical properties of the joint reach 20.5 MPa.

An etching technology with high uniformity of the amount of etching and improved yields of etching treatment is provided. An etching method for etching a film layer to be treated including SiGe placed on a surface of a wafer, includes: a step of forming a reaction layer including nitrogen-hydrogen bond on a surface of the film layer by supplying reactive particles including fluorine, hydrogen, and nitrogen to the surface of the film layer; and a step of heating the film layer to desorb the reaction layer.

This invention relates to the field of dissimilar material joining technology, and in particular to a low-temperature, high-strength aluminum brazing method for Al2O3 ceramic and stainless steel. The invention first deposits an Al layer and a Cu layer sequentially on the surface of a pretreated Al2O3 ceramic component to be brazed; then, it sequentially deposits an Al layer and a Cu layer on the surface of a pretreated stainless steel component to be brazed; next, it places an Al foil brazing filler between the Al2O3 ceramic and stainless steel surfaces to be brazed, obtaining an Al2O3 ceramic-brazing filler-stainless steel assembly; finally, it places the Al2O3 ceramic-brazing filler-stainless steel assembly in a vacuum brazing furnace for brazing, and then cools it to room temperature to obtain an Al2O3 ceramic-stainless steel brazed joint. This invention solves the problems of excessive reaction layer and high brazing temperature in traditional Al2O3 ceramic-stainless steel brazing methods by using aluminum and its alloy foil as brazing filler, achieving a high-strength connection between Al2O3 ceramic and stainless steel at a brazing temperature below 700°C.

This invention belongs to the field of semiconductor polishing technology, specifically relating to a processing method for sapphire substrates used in the high-orientation growth of two-dimensional materials. The method includes: mounting a C-axis [0001] single-crystal sapphire substrate on an angled processing device to process a single-crystal sapphire substrate with a C-axis offset from the A-axis or a C-axis offset from the M-axis; mounting the single-crystal sapphire substrate and a flexible polishing pad on a polishing device, and adding a polyhydroxy functional group compound and deionized water as a polishing fluid; providing charged abrasive particles on the surface of the flexible polishing pad; setting the load and rotation speed of the polishing device to cause relative friction between the single-crystal sapphire substrate and the flexible polishing pad, resulting in the formation of a low-hardness friction reaction layer between the single-crystal sapphire substrate and the polyhydroxy functional group compound in the polishing fluid under the frictional induction of the charged abrasive particles; and uniformly removing the reaction layer through the mechanical action of the charged abrasive particles with a spring-like effect. This invention can greatly improve the processing efficiency of atomic steps on single-crystal sapphire substrates.

A semiconductor structure and a method of forming the same, the method comprising: providing a substrate having an interconnect layer formed therein and exposing a top surface of the interconnect layer; forming an etching reaction layer covering the substrate; forming an etching target layer covering the etching reaction layer; performing an anisotropic etching process on the etching target layer and the etching reaction layer above the interconnect layer to form a via exposing the interconnect layer, the via comprising a top opening and a bottom opening with continuous sidewalls, the sidewall slope of the bottom opening being smaller than the sidewall slope of the top opening, such that the bottom dimension of the top opening is larger than the bottom dimension of the bottom opening, wherein the etching gas used in the etching process generates etching reaction deposits during etching of the etching reaction layer, the material of the etching reaction layer comprises metal oxide, and the etching gas used in the etching process comprises fluorine-containing etching gas. The present disclosure is advantageous in efficiently and cost-effectively forming a via with a top-wide and bottom-narrow morphology.

The application discloses a kind of nanocomposite aluminum base alloy for hot-dip aluminizing and hot-dip aluminizing method, and it relates to hot-dip plating technical field, it uses yttrium (Y) and cerium (Ce) to form composite rare earth modifier, cooperates nanocarbide strengthening phase, and is compatible with necessary silicon (Si), iron (Fe), manganese (Mn) element, forms a set of complete aluminum base alloy formula technical means, combined with supporting in-situ reaction synthesis and ultrasonic auxiliary preparation process, reaches the effect of significantly refining interface reaction layer, substantially improves coating hardness, toughness, salt fog corrosion resistance and high temperature oxidation resistance comprehensive performance, successfully solves the key technical problems of existing hot-dip aluminizing technology, such as nanometer reinforcing body dispersion difficulty, weak interface bonding force, and traditional modification element function single, difficult to cooperatively improve coating strength and toughness and durability.

The application discloses a preparation method and application of a calcium carbide deoxidizer composite tank body, and belongs to the technical field of steelmaking and molten steel refining, and aims to solve the technical problem of poor storage stability and easy pulverization of the calcium carbide deoxidizer obtained by using a traditional preparation method during use. The preparation method comprises the following steps: step 1, preparing a sealed storage tank body; step 2, preparing a gradient function filling system; step 21, preparing a core reaction layer; step 22, coating a paraffin regulation layer on the outer surface of the core reaction layer; step 23, wrapping a fluxing and catalyzing layer on the outer surface of the paraffin regulation layer; step 24, wrapping a passivation lime layer on the outer surface of the fluxing and catalyzing layer; and step 3, sealing. After the sealing treatment, the calcium carbide deoxidizer composite tank body product is obtained. The calcium carbide deoxidizer composite tank body obtained by using the preparation method can keep good stability during storage and is not prone to pulverization, and meanwhile, excellent deoxidation performance can be achieved during use.

This invention discloses a high thermal conductivity silicon nitride copper-clad laminate and its composite silver-copper alloy brazing preparation method, relating to the field of electronic packaging materials technology. The copper-clad laminate comprises a silicon nitride ceramic substrate, a composite silver-copper brazing layer, and an oxygen-free copper foil layer. The composite silver-copper brazing layer is formed by brazing composite silver-copper brazing powder, with a composition of Ag 60%-85%, Cu 10%-30%, active elements 0.5%-5%, and modifying elements 0.1%-3%. This invention constructs a composite brazing alloy system, utilizing the interfacial reaction between active elements and silicon nitride to suppress the formation of brittle compounds and form a continuous, dense reaction layer. Combined with a brazing process coupling 400-500℃ stepped heat preservation with 2-4℃ / min slow cooling, residual thermal stress is effectively released. Compared to existing technologies, this invention has a low interfacial void ratio, high bonding strength, and high thermal conductivity, and is suitable for high-reliability brazing of ultra-thin substrates of 0.1-0.5mm.

This invention provides a process for preparing β-based titanium alloy atomization raw material wire and process using pure titanium coarse powder, relating to the field of titanium alloy powder preparation technology. The wire includes a pure titanium sheath and a powder core filled within the sheath. The powder core is formed by stacking multiple powder-locking reaction units. Each powder-locking reaction unit includes a pure titanium coarse powder core, a reaction layer composed of β-stabilizing element fine powder localized and attached to the surface of the pure titanium coarse powder core, and a pure titanium fine powder locking shell layer covering the outside of the reaction layer. Pure titanium bridging fine powder is provided between adjacent units. During preparation, surface shaping treatment, two-stage low-energy mechanical fusion, encapsulation, warm processing, and two-stage heat treatment are performed to preferentially form a sintered neck network between the powder-locking shell layer and the bridging fine powder. This wire exhibits high compositional uniformity and good wire feeding stability, making it suitable for plasma atomization preparation of β-based titanium alloy powder.

The application discloses a method for inhibiting the growth of a reaction layer in a ZAM alloy coating, which comprises the following steps: firstly, heating the ZAM alloy to 720 DEG C, adding an Al-8B intermediate alloy prepared according to a proportion after the alloy liquid is completely melted, adding Mg blocks and Zn blocks needed to be supplemented after being cooled to 660 DEG C, and finally pouring the alloy after being kept at 460 DEG C for 30 min. Then, the alloy blocks are remelted at 460 DEG C and kept for 10 min; the Q235 steel plate after the previous treatment is immersed in the alloy liquid for 3 min, and then naturally cooled after being taken out. The method can obviously inhibit the growth of the reaction layer in the ZAM alloy coating, and the corrosion resistance of the Zn-6%Al-3%Mg-0.12%B alloy coating obtained by the method is obviously superior to that of the Zn-6%Al-3%Mg alloy.