30873results about How to "High bonding strength" patented technology

A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

Ultrasound applicators able to both image a treatment site and administer ultrasound therapy include an array of transducer elements that can be focused. In several embodiments, an electronically phased array is used for controlling the focal point of an ultrasound beam. The ultrasound beam produced thereby can also be electronically steered. To reduce the quality factor or Q of the array when the array is used for imaging, an electronic switch is selectively closed, placing a resistance in parallel with each of the array elements. A flexible array is employed in several embodiments and is selectively bent or flexed to vary its radius of curvature and thus control the focal point and / or a direction of focus of the array. In another embodiment, each of the transducer elements comprising the array are individually mechanically pivotable to steer the ultrasonic beam produced by the transducer elements.

A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.

A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process the method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.

Compositions and methods for manufacturing sheets having a starch-bound matrix, optionally reinforced with fibers and optionally including an inorganic mineral filler. Suitable mixtures for forming the sheets are prepared by mixing together water, unmodified and ungelatinized starch granules, a cellulosic ether, optionally fibers, and optionally an inorganic mineral filler in the correct proportions to form a sheet having desired properties. The mixtures are formed into sheets by passing them between one or more sets of heated rollers to form green sheets. The heated rollers cause the cellulosic ether to form a skin on the outer surfaces of the sheet that prevents the starch granules from causing the sheet to adhere to the rollers upon gelation of the starch. The green sheets are passed between heated rollers to gelatinize the starch granules, and then to dry the sheet by removing a substantial portion of the water by evaporation. The starch and cellulosic ether form the binding matrix of the sheets with the fibers and optional inorganic filler dispersed throughout the binding matrix. The starch-bound sheets can be cut, rolled, pressed, scored, perforated, folded, and glued to fashion articles from the sheets much like paper or paperboard. The sheets are particularly useful in the mass production of containers, such as food and beverage containers.

Apparatus for use in indirect bonding of orthodontic appliances includes a container having a chamber and a placement device received in the chamber. At least one orthodontic appliance is releasably connected to the placement device and has a base with a contour that is a replica of a portion of the patient's tooth structure. A bonding composition for bonding the appliance to the patient's tooth structure is applied to the base before the container is closed by the manufacturer, such that the practitioner can simply remove the placement device from the chamber and immediately transfer the appliances to the patient's teeth.

Compositions and methods for manufacturing sheets having a starch-bound matrix reinforced with fibers and optionally including an inorganic mineral filler. Suitable mixtures for forming the sheets are prepared by mixing together water, unmodified and ungelatinized starch granules, an auxiliary water-dispersible organic polymer, fibers, and optionally an inorganic mineral filler in the correct proportions to form a sheet having desired properties. The mixtures are formed into sheets by passing them between one or more sets of heated rollers to form green sheets. The heated rollers cause the auxiliary polymer to form a skin on the outer surfaces of the sheet that prevents the starch granules from causing the sheet to adhere to the rollers upon gelation of the starch. The green sheets are passed between heated rollers to gelatinize the starch granules, and then to dry the sheet by removing a substantial portion of the water by evaporation. The starch and auxiliary polymer form the binding matrix of the sheets with the fibers and optional inorganic filler dispersed throughout the binding matrix. The starch-bound sheets can be cut, rolled, pressed, scored, perforated, folded, and glued to fashion articles from the sheets much like paper or paperboard. The sheets are particularly useful in the mass production of containers, such as food and beverage containers.

Disclosed are a silicon based condenser microphone and a packaging method for the silicon based condenser microphone. The silicon based condenser microphone comprises a metal case, and a board which is mounted with a MEMS microphone chip and an ASIC chip having an electric voltage pump and a buffer IC and is formed with a connecting pattern for bonding with the metal case, wherein the connecting pattern is welded to the metal case. The method for packaging a silicon based condenser microphone includes the steps of inputting a board which is mounted with a MEMS chip and an ASIC chip and is formed with a connecting pattern; inputting a metal case, aligning the metal case on the connecting pattern of the board, and welding an opened end of the metal case to the connecting pattern of the board. Thus, the metal case is welded to the board by the laser.

A method for increasing the bond strength of ultrasonic bonds in elastomeric materials comprising elongating the elastomeric materials prior to ultrasonically bonding the materials.

Disclosed is an elongated absorbent article, in which liquid passage holes and embossments are dispersed in a central region including a front portion and a rear portion. Aperture density obtained by dividing (total of areas occupied by the liquid passage holes in the front portion) by (area of the front portion) is higher than aperture density obtained by dividing (total of areas occupied by the liquid passage holes in the rear portion) by (area of the rear portion), while embossment density obtained by dividing (total of areas occupied by the embossments in the rear portion) by (area of the rear portion) is higher than embossment density obtained by dividing (total of areas occupied by the embossments in the front portion) by (area of the front portion).

Apparatus for use in indirect bonding of orthodontic appliances includes a container having a chamber and a placement device received in the chamber. At least one orthodontic appliance is releasably connected to the placement device and has a base with a contour that is a replica of a portion of the patient's tooth structure. A bonding composition for bonding the appliance to the patient's tooth structure is applied to the base before the container is closed by the manufacturer, such that the practitioner can simply remove the placement device from the chamber and immediately transfer the appliances to the patient's teeth.

A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.

A method of fabricating an integrated spatial light modulator with contact structures. The method includes providing a first substrate having a bonding surface, providing a device substrate having a device surface, and depositing a first layer on the device surface, the first layer having an upper surface opposite the device surface. The method also includes patterning the first layer to define a plurality of contact structure openings, depositing a conductive layer on the upper surface of the first layer, reducing the thickness of the conductive layer, and removing at least a portion of the first layer to expose a plurality of contact structures. The method further includes depositing a standoff layer on the first layer, forming standoff structures from the standoff layer, and joining the bonding surface of the first substrate to the standoff structures to form a bonded substrate structure.

An object of the present invention is to provide a light emitting device that has high output power and long service life where a package is suppressed from discoloring due to heat generation. The light emitting device 1 of the present invention contains a light emitting element 10, a package 40 formed of a thermosetting resin, the package having a recess 43 wherein the light emitting element 10 is mounted, a first lead electrode 20 which is exposed at the bottom of the recess 43 of the package 40 and whereon the light emitting element 10 is mounted, and a second lead electrode 30 which is exposed at the bottom of the recess 43 of the package 40 and is electrically connected to the light emitting element 10. The light emitting element 10 is bonded to the first lead electrode 20 through a eutectic layer 70, and at least a surface of the first electrode 20 is coated with an Ag film 22, a thickness of the Ag film 22 being in the range from 0.5 μm to 20 μm.