83049 results about "Room temperature" patented technology

A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.

A medical instrument sterilization method is disclosed, which characterizes in following process: pending medical instrument for sterilization treatment being placed in a closed container, then being vacuum pumped, the vacuum pressure of the container being controlled between 1 Pa to 1500 Pa, air and/or oxygen and/or inert gases are charged to closed container and the vacuum pressure being between 1 Pa to 1500 Pa, microwave is fed, the favorable power of which should make the gas charged into the container to generate ionization, the microwave be cut after the sterilization, then air being charged to release vacuum to finish the whole process.

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si_xC_yN_z. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.

The classes of compounds are generally represented by the formulas:

• • and mixtures thereof, wherein R and R¹ in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R¹ in formula A also being combinable into a cyclic group, and R² representing a single bond, (CH₂)_n, a ring, or SiH₂.

According to this liquid crystal cell, a vacuum to be established between two electrode substrates as a result of the volume shrinkage of a liquid crystal having a high viscosity at the room temperature can be damped by communicating between two of a plurality of filling portions formed between two electrode substrates by a plurality of barrier walls through the intervening barrier walls. An anti-ferroelectric liquid crystal (AFLC) is used as the liquid crystal. The liquid crystal cell has a lower electrode substrate and an upper electrode substrate, between which a smectic liquid crystal is disposed together with a plurality of barrier walls on the inner side of a band seal. Each barrier wall has through holes to communicate between the two filling portions located on the two sides of the barrier walls.

A substrate transfer device includes a pick which has positioning pins to position a substrate and holds a positioned substrate; a drive unit which drives the pick such that the substrate is loaded/unloaded to/from a vacuum processing unit by using a pick; and a transfer control unit which controls a transfer operation of the substrate using the pick. The transfer control unit obtains in advance information on a reference position of the substrate at room temperature when the substrate is loaded into the vacuum processing unit, calculates a positional deviation from the reference position of the substrate when the substrate is loaded into the vacuum processing unit in actual processing, and controls a drive unit such that the substrate is loaded into the vacuum processing unit by correcting the positional deviation.

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith.

A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.

The present invention provides a room temperature-setting composition containing a polyoxyalkylene polymer (A), having a molecular weight of from 8000 to 50000 and having hydrolyzable silicon groups of the following formula (1), which comprises, as an essential component, the polyoxyalkylene polymer, having a molecular weight of from 8000 to 50000 and having hydrolyzable silicon groups of the formula (1), wherein a is 3 and a room temperature-setting composition containing a polyoxyalkylene polymer (A) having a molecular weight of from 8000 to 50000 and having hydrolyzable silicon groups of the formula (1), which comprises, as essential components, the polyoxyalkylene polymer having a molecular weight of from 8000 to 50000 and having hydrolyzable silicon groups of the formula (1) wherein a is 3, and a polymer (B) made by polymerization of a polymerizable unsaturated group-containing monomer (C):wherein R1 is a C1-20 substituted or unsubstituted monovalent organic group, X is a hydroxyl group or a hydrolyzable group, a is 1, 2 or 3, provided that when more than one R1 exist, the plurality of R1 may be the same or different, and when more than one X exist, the plurality of X may be the same or different.

A Single Electron MOS Memory (SEMM), in which one bit of information is represented by storing only one electron, has been demonstrated at room temperature. The SEMM is a floating gate Metal-Oxide-Semiconductor (MOS) transistor in silicon with a channel width (about 10 nanometers) which is smaller than the Debye screening length of a single electron stored on the floating gate, and a nanoscale polysilicon dot (about 7 nanometers by 7 nanometers by 2 nanometers) as the floating gate which is positioned between the channel and the control gate. An electron stored on the floating gate can screen the entire channel from the potential on the control gate, and lead to: (i) a discrete shift in the threshold voltage; (ii) a staircase relation between the charging voltage and the shift; and (iii) a self-limiting charging process. The structure and fabrication of the SEMM is well adapted to the manufacture of ultra large-scale integrated circuits.

A thermally-conductive interface for conductively cooling a heat-generating electronic component having an associated thermal dissipation member such as a heat sink. The interface is formed as a self-supporting layer of a thermally-conductive material which is form-stable at normal room temperature in a first phase and substantially conformable in a second phase to the interface surfaces of the electronic component and thermal dissipation member. The material has a transition temperature from the first phase to the second phase which is within the operating temperature range of the electronic component.

Electrodes, such as anodes and cathodes, can include a host material that is prelithiated or undergoes lithiation upon electrolyte introduction into a battery. Lithiation of the host material can occur by the agitation of lithium metal and a host material, the agitation of a lithium metal powder and a host material at a temperature greater than room temperature, the application of pressure to a lithium metal and host material mixture, contact of the host material with molten lithium metal, the lamination of lithium foil or lithium mesh onto an electrode containing the host material, or by lamination of lithium metal or mesh onto an electrode at elevated temperatures.

New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.

Positive electrode active materials are described that have a very high specific discharge capacity upon cycling at room temperature and at a moderate discharge rate. Some materials of interest have the formula Li_1+xNi_αMn_βCO_γO₂, where x ranges from about 0.05 to about 0.25, α ranges from about 0.1 to about 0.4, β ranges from about 0.4 to about 0.65, and γ ranges from about 0.05 to about 0.3. The materials can be coated with a metal fluoride to improve the performance of the materials especially upon cycling. Also, the coated materials can exhibit a very significant decrease in the irreversible capacity lose upon the first charge and discharge of the cell. Methods for producing these materials include, for example, a co-precipitation approach involving metal hydroxides and sol-gel approaches.

Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

With a view toward implementing a thermal controlling method for making reversible a temperature characteristic of a magnetic field generator using permanent magnets small in Hcj, a magnetic field generator whose temperature characteristic is reversible, using permanent magnets small in Hcj, and an MRI apparatus provided with such a magnetic field generator, there is provided a method for controlling the temperature of a magnetic field generator having a pair of disc-shaped permanent magnets whose magnetic poles opposite in polarity to each other are opposed to each other with spacing defined therebetween, and a yoke that forms return passes for magnetic fluxes of the permanent magnets, comprising the steps of raising the temperature from room temperature to a temperature higher than the room temperature, maintaining the temperature higher than the room temperature, and lowering the temperature from the temperature higher than the room temperature to the room temperature, whereby the temperature characteristics of the permanent magnets are made reversible.

A structure for use in high temperature applications and including a porous ceramic material consisting essentially of about 50-90 percent by weight iron or magnesium stabilized aluminum titanate (AlTiO5) and about 10-50 percent by weight strontium feldspar (SrO.Al2O3.2SiO2), and having a coefficient of thermal expansion over a temperature range from room temperature to 1000° C. of about -10x10-7/° C. to +15x10-7/° C., a heat capacity at 500° C. greater than 3.2 J/cm3K, a porosity of about 15-50 percent by volume, preferably 40-50 percent by volume, and a median pore size of about 5-50 micrometers, preferably 8-15 micrometers. The structure is especially useful as a diesel exhaust particulate filter.

A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

The preparation process of phenolic hydroxyl group-containing polyimide powder includes the following steps: 1. reaction of phenolic hydroxyl group-containing aromatic diamine compound or its mixture with other diamine compound and aromatic binary anhydride in the molar ratio of 1 to 1 in strong polar non-protonic organic solvent under protection of nitrogen at 0-30 deg.c for 3-12 hr to obtain transparent ropy polyhydroxy amido acid solution; and 2. adding azeotropic dewatering agent in nitrogen atmosphere and heating to 120-160 deg.c to reflux, azeotropically dewater and imidize for 5-18 hr, cooling to room temperature, washing and vacuum drying to obtain phenolic hydroxyl group-containing polyimide powder. The industrial production process has environment friendship, simple operation, low cost and easy solvent recovery.

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm⁻¹ at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10⁻⁴.