1287results about "After-treatment details" patented technology

The invention discloses a method for realizing high-quality stripping of large-size diamond by double-laser composite modification, which comprises the following steps: placing and fixing a sample on a three-dimensional mobile platform, and the upper surface of the sample is a crystal face (100); laser generated by an ultrafast laser generator penetrates through the upper surface of a sample and is focused into the sample, and then the laser generated by the ultrafast laser generator is used for performing first spot scanning on the sample to form an independent lattice structure; laser generated by the ultrafast laser generator is adopted to carry out secondary spot scanning on the sample to form a crack interconnected lattice structure; performing third-time line scanning on the sample by using laser generated by a nanosecond laser generator; and ultrasonically stripping the sample in water bath. By adopting a dual-laser composite modification process and combining bionic'honeycomb 'and'turtle shell' crack structure design, the crack is effectively guided to directionally extend along the crystal face (100), the problem of oblique crack when the stripping face is the crystal face (111) in the past is avoided, and the integrity and flatness of the stripping face are greatly improved.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention discloses a nickel-based single-crystal high-temperature alloy with high structure stability and a preparation method thereof, and relates to the technical field of high-temperature alloys. The nickel-based single crystal high-temperature alloy provided by the invention is prepared from the following components in percentage by mass: 5 to 7 percent of Al, 7.5 to 10 percent of Co, 5 to 7 percent of Cr, 0.1 to 0.2 percent of Hf, 0 to 2 percent of Mo, 5.5 to 7.5 percent of Ta, 0 to 1 percent of Ti, 8 to 10 percent of W, 0.02 to 0.05 percent of C, 0.003 to 0.005 percent of B and the balance of Ni. According to the invention, by controlling the ratio of elements and avoiding the addition of Re, the precipitation temperature of a harmful TCP phase is obviously reduced to about 840 DEG C on the basis of maintaining a sufficient solid solution strengthening effect, and the long-term stability of the structure is greatly improved. The high-temperature mechanical property of the alloy provided by the invention reaches the level equivalent to that of a traditional Re-containing second-generation single-crystal alloy and is remarkably superior to that of foreign Re-free single-crystal alloys MD2 and Rene N500, and the nickel-based single-crystal high-temperature alloy with high structure stability successfully realizes the unification of low cost and high performance, and is suitable for industrial production. And a reliable material solution is provided for manufacturing the heavy-duty gas turbine blade with higher market competitiveness.

The utility model discloses a water residue and water quenching prevention system for polycrystalline silicon broken material packaging, and particularly relates to the technical field of polycrystalline silicon processing, the system comprises an integrated control unit, a water quenching module, a water residue and water treatment module, a packaging module, a crushing module, a screening module, a drying module, a quality detection module and an environmental adaptability module. According to the water quenching system for preventing moisture residue in the polycrystalline silicon broken material packaging, the utilization rate of materials is improved through efficient crushing and accurate screening, the waterproof performance of products is enhanced through vacuum degassing and automatic humidity control, the consistency of product quality is ensured through automatic quality detection, and the production efficiency is improved. And the safety of the system is improved through integrated control and an emergency discharge device. The characteristics jointly improve the production efficiency, and ensure the stability and reliability of the product in a changeable environment.

The invention discloses a method for growing a low-surface-defect epitaxial wafer on a heavily-doped silicon substrate and the epitaxial wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: carrying out rapid heat treatment on a heavily doped silicon substrate of which the resistivity is not greater than 1.15 m omega.cm in an inert atmosphere at the treatment temperature of 1000-1500 DEG C and the heating / cooling rate of 10-120 DEG C / s, and keeping the high temperature for 30-120 seconds; then HCl gas phase polishing is carried out at the temperature of 650-1250 DEG C, and mixed gas of HCl and hydrogen is introduced to remove a surface silicon layer by 50-150 nm; and finally growing an epitaxial layer. And the substrate can be subjected to particle detection and screening, and only the substrate with the specific pattern defect is subjected to the treatment. According to the method, through the synergistic effect of RTP and HCl polishing, in-vivo defect repairing and surface finishing are achieved, the number of LPDs, larger than or equal to 55 nm, on the surface of the epitaxial wafer is stably reduced to 10 or below, and the quality of the epitaxial wafer is remarkably improved.

The invention relates to the technical field of crystal growth, in particular to a device and a method for diversion growth of silicon carbide single crystals. The invention provides a device for diversion growth of silicon carbide single crystals. The device comprises a crucible, a first rotary lifting shaft and a turbine liquid pump kit, the turbine liquid pump kit comprises a flow guide baffle, the upper portion of the flow guide baffle is connected with the first rotary lifting shaft, a seed crystal support with seed crystals is installed on the lower portion of the flow guide baffle, turbine blades are installed on the flow guide baffle and evenly distributed around the seed crystals, and the height of the lower ends of the turbine blades is smaller than that of the seed crystals. The invention provides a device and a method for diversion growth of silicon carbide single crystals, which can improve the transmission stability and transmission efficiency of solute in a solution and improve the long-time growth stability of crystals.

The invention provides a preparation method of a silicon carbide substrate, the silicon carbide substrate and a semiconductor device. The preparation method comprises the following steps: preprocessing a silicon carbide substrate raw material; performing neutron irradiation treatment on the material; and the material is subjected to annealing treatment. The silicon carbide substrate prepared by the preparation method provided by the invention can have relatively high mechanical property, conductivity, uniformity and stability.

The invention provides a laser crystal heterogeneous bonding method and an optical element, and relates to the technical field of laser, and the method comprises the steps: carrying out the ultra-precise surface treatment of the to-be-bonded surfaces of a laser crystal and a heterogeneous material based on the laser crystal and the heterogeneous material; respectively depositing at least one transition layer on the two to-be-bonded surfaces after surface treatment through a physical or chemical deposition method; the outermost layers of the two transition layers are made of the same material; carrying out ion beam activation treatment on the two surfaces to be bonded on which the transition layers are deposited so as to form high-activity surfaces; and aligning the two activated surfaces to be bonded in a vacuum environment at room temperature and applying pressure, and realizing room-temperature bonding through electrostatic force and chemical bond action to obtain a bonding body of the laser crystal and the heterogeneous material. According to the invention, thermal-mechanical property and chemical property differences among heterogeneous materials are overcome, and high-strength, low-stress and high-optical-quality bonding is realized.

The present application belongs to the field of diamond preparation, and discloses a high-quality single-crystal diamond preparation method for removing polycrystal defects. Through screen printing and plasma-assisted etching, the (100) surface around the black point-shaped polycrystal is directionally etched by cerium oxide, and a square groove is etched. Then, the slurry of iron oxide or nickel oxide is printed by screen printing, the black point-shaped polycrystal is covered with the slurry, and the black point-shaped polycrystal is removed by plasma-assisted etching. Then, the etched groove is filled by a horizontal growth process, so that the growth defects can be removed, and high-quality single-crystal diamond can be obtained. The present application can greatly reduce the waste rate of single-crystal diamond products and improve the utilization rate of single-crystal diamond. The present application is beneficial to saving production cost and improving efficiency.

The invention relates to the field of silicon carbide wafer preparation, in particular to a semi-insulating silicon carbide wafer annealing device and method, the annealing device comprises a crucible cover and a graphite crucible which are detachably connected, an annealing chamber is arranged in the graphite crucible, the annealing chamber comprises a wafer supporting area and a powder area, and the powder area is arranged in the crucible cover. The gas pressure control assembly is used for controlling gas components and pressure intensity in the annealing chamber; the heating device is used for heating the annealing chamber in a partitioned manner; and the heat preservation system is arranged outside the crucible cover and the graphite crucible in a sleeving manner. By means of the annealing device, the problems of silicon carbide wafer intrinsic point defect screening and concentration control can be effectively solved, the Fermi energy level is controlled at the EH6 / 7 energy level position, and the silicon carbide wafer obtained through annealing finally achieves control over the electrical resistivity larger than 1E12 ohm cm.

The invention relates to the technical field of semiconductor materials, in particular to a low-working-current-density cyan LED epitaxial structure and a preparation method thereof.The low-working-current-density cyan LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum-well light-emitting layer and a P-type semiconductor layer which are sequentially stacked on the substrate; the multi-quantum well light-emitting layer comprises a first light blue light multi-quantum well sub-layer, a second blue light multi-quantum well sub-layer, a third blue light multi-quantum well sub-layer and a fourth light blue light multi-quantum well sub-layer which are sequentially stacked and grown from bottom to top; wherein each sub-layer is of a superlattice structure of an InGaN multi-quantum well layer and a multi-quantum barrier layer, and the barrier heights of the sub-layers decrease progressively in a gradient mode, namely, the high barrier, the middle barrier, the low barrier and the low barrier decrease progressively in sequence. The upper-layer low-potential barrier attracts holes to migrate downwards, and the lower-layer high-potential barrier blocks electrons from leaking, so that space matching of the electrons and the holes is realized, and the performances such as luminous efficiency and yield of the cyan LED chip under low working current density are improved.

The invention discloses a method for improving the oxidation resistance of nickel-based superalloy, and belongs to the technical field of metal material surface modification. Based on the high-energy transient effect of laser shock waves, the method mainly comprises the key steps of alloy surface pretreatment, laser shock peening process implementation, post-treatment and the like. Specifically, firstly, the surface of the nickel-based single crystal alloy is subjected to pretreatment such as polishing and cleaning, surface defects and pollutants are removed, and the treatment quality is guaranteed; then, according to the material characteristics and performance requirements of the nickel-based single crystal alloy, laser parameters such as laser energy, pulse width and light spot diameter are accurately set, and proper restraint layer and absorption layer materials are selected; then, high-energy pulse laser is utilized to irradiate the absorption layer, high-temperature and high-pressure plasma is induced to be generated, the plasma expands and explodes to generate strong shock waves, the shock waves act on the alloy surface, the surface material is subjected to severe plastic deformation, a residual compressive stress layer with the depth capable of reaching hundreds of micrometers is formed, meanwhile, surface grains are refined, and the microstructure is optimized; and after the strengthening treatment is completed, simple cleaning and performance detection post-treatment are carried out. Through laser shock strengthening, a special organization structure with high density and low defect density is formed on the surface of the nickel-based single crystal alloy, diffusion and invasion of oxygen atoms are effectively hindered, and the oxidation resistance of the alloy is remarkably improved. According to the method, the controllability of technological parameters is high, the strengthening effect can be accurately regulated and controlled, the treatment process is free of pollution and high in efficiency, the obtained strengthened nickel-based single crystal alloy can be widely applied to the fields such as aerospace engine hot end parts and nuclear energy equipment which have strict requirements for high-temperature oxidation resistance, the reliability of related parts is greatly improved, and the service life of the related parts is greatly prolonged.

The invention relates to the technical field of semiconductor manufacturing, and provides an epitaxial growth process control method and system, and the method comprises the steps: obtaining growth process operation parameters; analyzing the growth process operation parameters to obtain a process stage analysis result; when the process stage analysis result is an epitaxial growth stage, real-time performance parameters of the surface of the wafer are obtained; calculating according to the real-time performance parameters and a preset stress decoupling model to obtain real-time state data; comparing the real-time state data with a preset process phase diagram, and determining an optimal process parameter range; predicting the stress development trend according to the optimal process parameter range and a model prediction control algorithm to obtain a stress prediction result; and a process parameter adjustment instruction is generated according to the stress prediction result, so that wafer warping can be actively inhibited at an extremely low level, the average growth rate is improved on the premise of ensuring low stress, and the production efficiency is further remarkably improved.

This invention discloses a texturing additive for preparing monocrystalline silicon with a bamboo shoot-like textured surface and its application process. The mass percentage of each component in the texturing additive is as follows: polyvinyl alcohol 0.01-0.2%, polymeric dispersant 0.03-0.25%, texture modifier 0.005-0.025%, reaction promoter 0.4-1.5%, and the balance being water. Using the texturing additive of this invention, monocrystalline silicon wafers can be texturized once or twice. When applied to the monocrystalline silicon texturing process, the additive of this invention can obtain a "bamboo shoot-like" textured surface structure. This textured surface structure has a stronger absorption effect on sunlight than the traditional pyramid textured surface structure, resulting in a significant improvement in the current performance of the solar cells. Furthermore, the additive of this invention is applicable not only to primary and secondary texturing processes, but also to secondary texturing processes where the same type of additive is used in both texturing tanks, greatly improving production line compatibility and reducing production line supply costs.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention discloses a single crystal boron nitride wafer batch preparation method based on a copper-nickel single crystal film and application, and belongs to the technical field of two-dimensional material preparation and nano electronic device manufacturing. The method comprises the following steps: forming a Cu80Ni20 (111) single crystal film on a c-plane sapphire substrate through magnetron sputtering and high-temperature annealing to serve as a growth substrate; carrying out thermal conversion treatment on the ammonia borane precursor to form a supply source system capable of stably releasing a borazine gas phase precursor; a porous structure quartz sleeve is adopted to regulate and control the release behavior of a precursor, and multi-wafer airflow homogenization control is realized in a CVD system through a quartz staggered wafer carrier; and carrying out epitaxial growth, and synchronously preparing more than 10 single crystal boron nitride wafers which are consistent in crystal orientation, smooth in surface and free of crystal boundaries in a single batch. According to the method, efficient, uniform and repeatable batch preparation of the high-quality monocrystal h-BN is realized, and the obtained wafer has atomic-scale flatness and excellent insulating property and is suitable for high-performance two-dimensional electronic devices, deep ultraviolet photoelectric devices and quantum device platforms.

The invention provides vertical furnace tube equipment and a temperature control method thereof. The vertical furnace tube equipment comprises a furnace body; the wafer boat bears multiple layers of wafers in the height direction, and the multiple layers of wafers are divided into N height areas; the plurality of gas injection pipes are used for injecting gas into each height area; the plurality of regulating valves are used for regulating the gas flow of the corresponding gas injection pipes; the plurality of temperature detection devices are used for detecting the actual temperature of the wafer in each height area; the plurality of heaters are consistent in structure, are in one-to-one correspondence with the N height areas, and are used for heating the wafer in each height area; and the temperature control device is used for controlling the regulating valve and the heater in the corresponding height area according to the deviation between the actual temperature of the wafer and the preset temperature. The temperature of wafers in different height areas can be detected and controlled in real time, and the temperature deviation between the wafers in the same furnace is reduced, so that the temperature uniformity of the wafers in different heights is improved.

Methods and systems for fabricating semiconductor devices that use a cyclic pulse-etch-purge process, particularly after epitaxial film deposition, are provided. The process involves alternating flows of etch and purge gases (such as H2, N2, HCl, Cl2, and others) and optionally deposition gases to selectively remove unwanted doped silicon-containing material, shaping epitaxial features with precise profiles and minimizing defects like voids. The method can be performed in-situ in the same chamber as deposition and uses controlled cycles of gas pulses to achieve targeted source / drain feature formation. It supports various process parameters and chemistries, is compatible with standard nMOS and pMOS conditions, and can be implemented in automated semiconductor manufacturing environments.

Systems and methods to process a semiconductor workpiece are provided. One example method includes providing a semiconductor workpiece having a subsurface damage region. The method includes performing a treatment process on the subsurface damage region. The treatment process includes providing a treatment emission of radiation from a radiation source to the subsurface damage region of the workpiece at a non-perpendicular angle relative to the subsurface damage region.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

The present invention relates to the technical field of solar cell preparation, and specifically provides a heterojunction cell preparation method and a heterojunction cell. The heterojunction cell preparation method comprises: providing a semiconductor substrate layer, at least one side of the semiconductor substrate layer being provided with a damage layer; performing first texturing treatment on the semiconductor substrate layer to remove some damage from the damage layer, such that the surface of the side of the semiconductor substrate layer having the damage layer forms an inverted pyramid textured surface, the inverted pyramid textured surface comprising a plurality of first microstructural units; and, after the first texturing treatment, performing second texturing treatment on the side of the semiconductor substrate layer where the inverted pyramid textured surface is formed, so as to form a plurality of second pyramids on the surfaces of the first microstructural units of the inverted pyramid textured surface, and remove remaining damage from the damage layer. The heterojunction cell preparation method of the present invention enables prepared cells to have high fill factors at low costs.

A method includes: transporting a wafer to an apparatus, the apparatus including: a first chamber configured to receive the wafer and a first gas; a second chamber surrounding the first chamber and configured to receive a second gas; a plurality of gas inlets on a chamber wall of the second chamber; and a plurality of gas vents on the chamber wall of the second chamber; heating the first chamber while keeping a gas pressure difference between the first chamber and the second chamber within a tolerance limit; and cooling the first chamber by exchanging the second gas in the second chamber while keeping the gas pressure difference within the tolerance limit.

The invention belongs to the technical field of solar cells, and particularly discloses a texturing additive, a texturing solution and a texturing method of a back contact cell. The texturing additive for the back contact battery comprises the following components in percentage by mass: 1.0%-5.0% of sodium carboxymethyl cellulose, 0.03%-0.2% of sodium lignin sulfonate, 0.003%-0.03% of paeoniflorin, 0.005%-0.05% of salvianolic acid B, 0.001%-0.01% of polyhexamethylene biguanide hydrochloride, 0.3%-1.0% of a buffering agent, 0.01%-0.1% of a surfactant and the balance of water. The components interact with each other, and the texturing additive is added into the texturing liquid to improve the flatness of the texturing surface and effectively solve the problem that the texturing surface is not fully distributed, so that the minority carrier lifetime and the open voltage of the back contact battery are improved, and the photoelectric conversion efficiency of the battery is improved.

The invention provides a method for forming a semiconductor device, which comprises the following steps of: sequentially executing a first oxidation process and a second oxidation process on a substrate to form an oxidation layer on the surface of the substrate, a preset angle difference exists between the placement angle of the substrate in the first oxidation process and the placement angle of the substrate in the second oxidation process. As the temperature of the second oxidation process is smaller than or equal to the temperature of the first oxidation process, slippage lines of the substrate caused by long-time high temperature can be reduced or avoided, and the preset angle difference exists between the placement angle of the substrate in the first oxidation process and the placement angle of the substrate in the second oxidation process, so that the placement angle of the substrate in the first oxidation process is increased. The placement angles of the substrates in the two oxidation processes can be prevented from being overlapped, so that the formation of slippage line defects is reduced or avoided.

The present disclosure discloses a method for manufacturing a semiconductor epitaxial layer, including: forming a well region. A transition layer is formed by performing cyclic steps, where the cyclic steps includes: performing a first interface repair process to repair a defect exposed on the surface of a previous layer; and performing first epitaxial growth to form an undoped first epitaxial sublayer on the surface of the previous layer. A bulk layer of the semiconductor epitaxial layer is formed, including: performing a second interface repair process to repair a defect exposed on the surface of the transition layer; and performing second epitaxial growth to form the undoped bulk layer on the surface of the transition layer. The rate of the first epitaxial growth is less than the rate of the second epitaxial growth, and the thickness of the bulk layer is greater than the thickness of each first epitaxial sublayer.

The invention relates to the technical field of diamond color center quantum light sources, in particular to a method for preparing a diamond color center in a positioning mode, and the method comprises the following steps that a single-face polished sapphire sheet serves as a substrate, and a microwave plasma chemical vapor deposition method is adopted for preparing a single crystal diamond with a (001) surface; preparing a metal layer on the surface of the monocrystal diamond by adopting a physical vapor deposition method, and dehumidifying and self-assembling to form balls; etching the surface of the monocrystal diamond (001) at a high temperature in a hydrogen atmosphere to form a conical pit structure with a different surface; and selectively growing a diamond color center in the cone pit by adopting a chemical vapor deposition method. Aiming at the problems that the existing ion implantation technology for positioning and preparing the diamond color center is difficult to realize nanoscale accurate control and high in cost, a foundation is laid for the integration and low-cost preparation of the high-purity and high-brightness diamond single photon source.

Methods and systems for processing semiconductor workpieces are provided. In one example, a system includes one or more laser source(s) having emission parameters configured to induce a nonthermal lattice modification in a semiconductor workpiece and one or more energy source(s) having different emission parameters relative to the laser source(s). The system is configured to induce a treatment region in the semiconductor workpiece with a laser emission from the laser source(s). The system is further configured to induce a damage region at the treatment region with an energy exposure from the energy source(s). In some examples, the system is further configured to perform a pre-separation treatment process on the damage region and, subsequent to the pre-separation treatment process, separate the semiconductor workpiece along the damage region using a removal process to produce one or more semiconductor die.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

The invention discloses a low-temperature bonding method and a bonded wafer, and belongs to the technical field of wafer bonding. The method comprises the following steps of: (1) performing plasma enhanced chemical vapor deposition on a non-bonding surface of a substrate wafer and / or a piezoelectric wafer to form a SiO2 layer; (2) performing plasma activation treatment on the piezoelectric wafer and the substrate wafer; (3) cleaning and blow-drying the activated piezoelectric wafer and the substrate wafer, and forming an oxide layer with the thickness of at least 1.5 nm on the surface of the cleaned and blow-dried substrate wafer; (4) laminating the piezoelectric wafer obtained in the step (3) with a substrate wafer, and carrying out pre-bonding under 0.9 * 10 < 5 >-1.2 * 10 < 5 > Pa and the humidity of 50%-70%; and (4) annealing the pre-bonded wafer to obtain a bonded wafer. According to the method, the bonding strength can be effectively improved, defects such as holes are avoided, and the performance stability of the bonded wafer is improved.

The invention discloses a method for preparing a two-dimensional material with a wrinkle structure under the assistance of liquid metal and application, and belongs to the field of micro-nano machining of two-dimensional materials. The method comprises the following steps: S1, covering the upper surface of a two-dimensional material with liquid metal gallium, and solidifying the liquid metal gallium under a cooling condition to obtain a metal gallium ingot loaded with a two-dimensional material nanosheet; s2, heating the metal gallium ingot loaded with the molybdenum disulfide nanosheet until gallium is molten, cooling and solidifying, and obtaining a two-dimensional material with a wrinkle structure after solidification; the method disclosed by the invention can be used for efficiently preparing the large-area and high-density wrinkle type two-dimensional material, is suitable for manufacturing devices such as high-performance sensors and has a wide application prospect.