281results about How to "Efficient polishing" patented technology

A modified plating solution that can be used to electroplate a high quality conductive material that can be effectively polished and planarized includes (1) a solvent, (2) an ionic species of the conductive material to be deposited, (3) at least one additive to improve electrical and structural properties, and (4) a modifying agent.

The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises an aqueous medium, an abrasive, and an abrasion accelerator. The abrasion accelerator mainly functions to enhance the removal rate of the substances to be removed, and selected from the compounds of the following formula, the acid-addition salts thereof, or mixtures of two or more of the foregoing compounds and salts:wherein X and Y are independently lone-pair electrons containing atoms or atomic groups; and R1 and R2 are independently H, alky, amino, aminoalkyl, or alkoxy. The chemical-mechanical abrasive composition of the invention may optionally comprise an acidic component and/or a salt thereof, so as to further enhance the abrasion rate. The invention further provides a method of using the above chemical-mechanical abrasive composition for polishing the surface of a semiconductor wafer.

A polishing pad, a polishing laminated pad and a semiconductor wafer polishing method all of which prevent a leak of slurry from the gap between a polishing substrate and a reduction in polishing efficiency caused by a scratched and a window member and enable the optical detection of the polishing end point to be carried out efficiently. The polishing pad comprises a polishing substrate having a through hole extending from the front side to the rear side and a light transmitting member arranged in the through hole, and the outer wall of the above light transmitting member and the inner wall of the though hole opposite to the outer wall are bonded together with a photocurable adhesive such as a polyurethane(meth)acrylate to fix the above light transmitting member in the through hole.

A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1),

wherein m and n individually represent integers equal to or larger than one, provided that m+n≦50 is satisfied.

A chemical mechanical polishing pad used for chemical mechanical polishing comprises a polishing surface, a non-polishing surface that is provided opposite to the polishing surface, a side surface that connects an outer edge of the polishing surface and an outer edge of the non-polishing surface, and a plurality of grooves formed in the polishing surface. The side surface has a slope surface that is connected to the polishing surface, and a depth of the grooves is equal to or smaller than a height of the slope surface.

A process for production of an abrasive foam based on a melamine-formaldehyde condensate comprising inorganic nanoparticles, comprising the steps of:

• • (1) preparation of a solution or dispersion comprising a precondensate of the foam to be produced, and also comprising inorganic nanoparticles,
  • (2) foaming of the precondensate via heating of the solution or dispersion from step (1), in order to obtain a foam which comprises inorganic nanoparticles, and also, if appropriate,
  • (3) heat-conditioning of the foam obtained in step (2),

leads to improved abrasion in the polishing of delicate surfaces.

A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes: pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon; and pressing a second polishing tape against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

The invention offers a slurry for polishing the surface of a nitride crystal. The polishing slurry contains oxide abrasive grains, at least one dispersant selected from the group consisting of an anionic organic dispersant and an inorganic dispersant, and an oxidizing reagent. The polishing slurry has a pH of less than 7. The slurry efficiently polishes the surface of the nitride crystal.

A wheel and belt polishing device for inner and outer surfaces and free-form surfaces of high-steepness parts comprises a mounting bedplate, a driving mechanism, a driving wheel, a contact wheel, a polishing belt and a long supporting arm. The driving mechanism is mounted on the mounting bedplate, the driving wheel is connected with an output end of the driving mechanism, the polishing belt is wound on the driving wheel and the contact wheel, one end of the supporting arm is fixed onto the mounting bedplate, the other end of the supporting arm extends out of the mounting bedplate and can extend into an inner cavity of a workpiece, and the contact wheel is mounted at the end of the supporting arm extending out of the mounting bedplate. The invention further discloses a machine tool which comprises a tool body. The wheel and belt polishing device for inner and outer surfaces and free-form surfaces of high-steepness parts is arranged on the tool body. By the wheel and belt polishing device and the machine tool, the inner cavity of the part can be polished conveniently, and polishing efficiency is high.

There are disclosed a method and device for polishing a metal ring, which is capable of polishing a side edge of the metal ring without performing barrel polishing or polishing by grinding stones. Subsequently to a projecting step of projecting a metal ring W by clearing means 6, a first brush polishing step of polishing one edge of the metal ring W by a polishing brush 60 is performed. Subsequently, an inverting step of inverting the metal ring W whose one edge is polished by the first brush polishing step is inverted by the inverting means 10 is performed. Subsequently, a second brush polishing step of polishing the other edge of the metal ring W which is inverted by the inverting step by the polishing brush 60 is performed. Moreover, a clearing step of clearing the metal ring whose other edge is polished by the second brush polishing step by clearing means 7 is performed.

A magnetic polishing method capable of easily and satisfactorily polishing the inner peripheral end face of a circular hole (1) at the center part of a disk substrate (2) even if the diameter of the circular hole is reduced. By this method, a large quantity of disk substrates with stable quality can be supplied, thermal asperity trouble and head crush can be prevented from occurring on a magnetic disk, and the density of the information recording surface of the magnetic disk can be increased. In the method for polishing the inner peripheral end face of the circular hole (1) at the center part of the disk substrate (2), a magnetic field is formed on the inner peripheral side of the circular hole (1), abrasive materials (4) including magnetic particles and abrasive grains are held by the magnetic field in the circular hole, and the magnetic field is moved to the inner peripheral end face of the circular hole (1) to move the abrasive materials (4) to the inner peripheral end face of the circular hole (1) for polishing the inner peripheral end face of the circular hole (1).

The invention relates to a wire surface rust removal polisher. Rust removal polishing is performed on the surface of a wire in the mode that an abrasive belt moves to grind the wire and rotates around the circumference of the wire, the abrasive belt conducts helical motion on the surface of the wire due to linear movement of the wire, and therefore grinding dust removal can be performed on the whole surface of the wire. In addition, removed iron rust can be recycled, and therefore the production cost is lowered; a physical abrasive belt grinding method replaces a traditional chemical electrolysis pickling method, and therefore air pollution is reduced.

The invention relates to a polishing tool, in particular to a metal curved surface flexible polishing tool. The metal curved surface flexible polishing tool comprises a polishing head, an outer shell, a front end cover, a rear end cover, a gasket, a thrust bearing, a universal joint, a gear transmission mechanism, a coupler, a motor and a flange, wherein the polishing head is provided with three round polishing heads which are evenly distributed on a circumference, the center connecting lines of the three round polishing heads form an equilateral triangle, the gasket is located at the bottom of the polishing head, the thrust bearing is located between the polishing head and the gasket, the thrust bearing and the gasket are fixed together, a spring is located at the bottom of the gasket, the two ends of the spring are fixed on the gasket and the front end cover, a shaft of the polishing head is connected with a gear shaft of the gear transmission mechanism through the universal joint, and a driving gear shaft of the gear transmission mechanism is connected with a power output shaft of the motor through the coupler. The gear transmission mechanism, the coupler and the motor are packaged inside a shell body formed by the outer shell, the front end cover and the rear end cover, heat radiation holes are formed in the outer shell, and the flange is externally connected with an industrial robot.

Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

The purpose of the present invention is to provide a device for brush-polishing by means of a polishing brush that rotates and revolves as in a planetary motion, wherein the conditions to polish can be easily set in accordance with the properties of the workpiece and the purposes to polish. A brush unit has a polishing brush that rotates and revolves. The brush unit includes a mechanism for driving the rotation that rotates the polishing brush and the mechanism for driving the revolution that revolves it. By adjusting the speed of the rotation by the mechanism for driving the rotation the capabilities to polish the workpiece are enhanced. By adjusting the speed of the revolution by the mechanism for driving the revolution the entire workpiece is uniformly polished.