The embodiment of the present disclosure relates to a chemical mechanical
polishing device and a method for adjusting
chemical mechanical planarization. The chemical mechanical
polishing device comprises: a
polishing pad carrying a polishing pad; a polishing head located above the polishing pad, the polishing head carrying a
wafer on one side close to the polishing pad; a first detection device arranged outside the
wafer, used for detecting the thickness change of the
wafer, and generating a thickness difference
signal according to the thickness change; a control device connected with the first detection device, used for receiving the thickness difference
signal, and generating a
control signal according to the thickness difference
signal, the
control signal being used for adjusting the first distance between the polishing pad and the polishing head, so that the polishing rate of the polishing pad polishing the wafer remains unchanged. According to the thickness difference signal, the
control signal for adjusting the first distance between the polishing pad and the polishing head is generated, so that the change of the polishing pad and the wafer thickness does not affect the polishing rate of the chemical mechanical polishing process, thereby ensuring that the polishing process of the chemical mechanical polishing process is stably carried out.