Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

30 results about "Reaction bonded silicon carbide" patented technology

Reaction bonded silicon carbide, also known as siliconized silicon carbide or SiSiC, is a type of silicon carbide that is manufactured by a chemical reaction between porous carbon or graphite with molten silicon. Due to the left over traces of silicon, reaction bonded silicon carbide is often referred to as siliconized silicon carbide, or its abbreviation SiSiC.

Boron carbide composite bodies, and methods for making same

A composite body produced by a reactive infiltration process that possesses high mechanical strength, high hardness and high stiffness has applications in such diverse industries as precision equipment and ballistic armor. Specifically, the composite material features a boron carbide filler or reinforcement phase, and a silicon carbide matrix produced by the reactive infiltration of an infiltrant having a silicon component with a porous mass having a carbonaceous component. Potential deleterious reaction of the boron carbide with silicon during infiltration is suppressed by alloying or dissolving boron into the silicon prior to contact of the silicon infiltrant with the boron carbide. In a preferred embodiment of the invention related specifically to armor, good ballistic performance can be advanced by loading the porous mass or preform to be infiltrated to a high degree with one or more hard fillers such as boron carbide, and by limiting the size of the largest particles making up the mass. The instant reaction-bonded silicon carbide (RBSC) composite bodies surpass previous RBSC's as armor materials, and in this capacity approach the ballistic performance of current carbide armor ceramics but with potentially lower cost manufacturing methods, e.g., infiltration techniques.
Owner:II VI DELAWARE INC +1

Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer

The invention provides a preparation method of an RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer, and belongs to the technical field of thin film deposition. The method comprises the following steps: I, preparing filming conditions: mounting a Si target on a twin sputtering cathode of a filming machine, performing surface cleaning treatment on the RB-SiC substrate, fixing to a filming machine workpiece clamp, vacuuming the filming machine and roasting the RB-SiC substrate; II, performing surface treatment on the surface of the Si target of the sputtering cathode: introducing Ar gas into the sputtering cathode, and adjusting medium frequency power supply power to perform sputtering pre-treatment on the surface of the Si target; III, preparing the Si modification layer: increasing the medium frequency power supply power and Ar ventilation volume, and depositing the Si modification layer on the RB-SiC substrate by using a medium frequency magnetron sputtering technology. The preparation process is greatly simplified, the compactness of the film layer is high, the film is uniform, the polishing characteristic is obviously improved, and the optical quality of the surface of the polished substrate is greatly improved.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Boron carbide composite bodies, and methods for making same

A composite body produced by a reactive infiltration process that possesses high mechanical strength, high hardness and high stiffness has applications in such diverse industries as precision equipment and ballistic armor. Specifically, the composite material features a boron carbide filler or reinforcement phase, and a silicon carbide matrix produced by the reactive infiltration of an infiltrant having a silicon component with a porous mass having a carbonaceous component. Potential deleterious reaction of the boron carbide with silicon during infiltration is suppressed by alloying or dissolving boron into the silicon prior to contact of the silicon infiltrant with the boron carbide. In a preferred embodiment of the invention related specifically to armor, good ballistic performance can be advanced by loading the porous mass or preform to be infiltrated to a high degree with one or more hard fillers such as boron carbide, and by limiting the size of the largest particles making up the mass. The instant reaction-bonded silicon carbide (RBSC) composite bodies surpass previous RBSC's as armor materials, and in this capacity approach the ballistic performance of current carbide armor ceramics but with potentially lower cost manufacturing methods, e.g., infiltration techniques.
Owner:II VI DELAWARE INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products