520results about "Silicon carbide" patented technology

The invention discloses a method for converting a waste wind power blade composite material into silicon carbide, which comprises the following steps: mixing waste wind power blade composite material powder with a conductive agent to obtain a mixture, the waste wind power blade composite material comprising a silicon element and a carbon element; and performing flash Joule heat treatment on the mixture to obtain the silicon carbide. According to the method, the waste wind power blade composite material powder does not need to be subjected to any pretreatment such as pyrolysis, the waste wind power blade composite material can be converted into the silicon carbide with the high additional value only through one-step flash Joule heat treatment in the presence of the conductive agent, and the process steps are simple; and meanwhile, the flash Joule heat treatment is an electric heating pulse rapid high-temperature treatment mode, so that the time consumption is very short, and the method is energy-saving, efficient and environment-friendly.

The invention discloses a method for preparing silicon carbide materials by using coal gasification slag, belonging to the field of solid waste recycling. The solution of the invention includes first pre-treating the coal gasification slag, then performing acid leaching, water washing, suction filtration and drying on the pre-treated coal gasification slag, and then performing Joule heating treatment. After calcination, silicon carbide is obtained; in the Joule heating treatment, the discharge voltage is set to 120V-150V, and the number of discharges is 1-5 times. By performing Joule heating treatment on the coal gasification slag, the reaction time of each Joule heating reaction is extremely short, greatly reducing the energy consumption, and sharply shortening the reaction time, solving the technical problem of high energy consumption caused by the long reaction time in the traditional carbothermal reduction for preparing silicon carbide materials in the prior art.

The present invention refers to a SiC and Chlorosilane production system 2540, comprising at least one CVD SiC production reactor 850, in particular SiC fluidized bed reactor 850a, in particular according to claim 9, and a Chlorosilane production unit 2550, wherein the Chlorosilane production unit 2550 comprises at least a bed reactor 2416, in particular a fixed bed reactor or a fluidized bed reactor, for generating Chlorosilanes by reacting at least one fraction of the vent gas mixture provided via the vent gas outlet 216 of the CVD SiC production reactor 850 and Si, wherein further fractions of the vent gas mixture at least comprise H2 and a C-bearing molecule, in particular methane, and wherein Si is provided as solid 2398 inside the bed reactor 2416.

The present invention relates to a composite powder for use in a negative electrode of a battery, the composite powder comprising composite particles and carbon nanotubes, the composite particles comprising a carbonaceous matrix material in which silicon-based particles are embedded, and wherein the surfaces of the composite particles are at least partially covered by the carbon nanotubes.

Ultrafast flash evaporation joule heating synthesis methods and systems, more particularly, ultrafast synthesis methods for recovering metals from ores, fly ash, and bauxite residue (red mud).

A process and an apparatus for silicon carbide production includes steps of producing a mixture having at least a carbon powder and a silica powder where the percentage by weight of carbon powder with respect to the total weight of the mixture, is at least about 25%; placing the mixture in a crucible; creating a substantially inert atmosphere in an area at least partially surrounding the crucible; heating up the crucible by a heating device for a first time interval until reaching a working temperature of at least 1.500° C. and lower than a melting temperature of the silica powder in the mixture; maintaining the crucible within a working temperature range between 1.500° C. and the melting temperature of the silica powder in the mixture for a second time interval; and reducing the temperature of the crucible after the second time interval.

The present application provides a kind of silicon-carbon negative electrode material and its preparation method.The silicon-carbon negative electrode material includes carbon skeleton with pore structure and silicon-based material arranged in the pore structure, in the region from the surface of the silicon-carbon negative electrode material to the inside extending 10nm from the surface, the content of high-valence silicon is less than 25% relative to the total amount of low-valence silicon and high-valence silicon, wherein the low-valence silicon is 0-valence to 2-valence silicon, and the high-valence silicon is 3-valence to 4-valence silicon.Thereby, the lithium extraction gram capacity and the first coulomb efficiency of the silicon-carbon negative electrode material can be improved, and the discharge gram capacity and the first coulomb efficiency of the secondary battery can be improved.

The invention discloses a double-layer nano silicon-based material as well as a preparation method and application thereof, and belongs to the technical field of energy storage. The double-layer nano silicon-based material sequentially comprises a core layer, a first shell layer and a second shell layer from inside to outside, the core layer is nano silicon, the first shell layer is a silicon carbide layer with the thickness of 1.1-5.0 nm, and the second shell layer is a carbon layer with the thickness of 1.1-4.2 nm; a carbon-silicon bond is formed between the core layer and the first shell layer, and a carbon-silicon bond is formed between the first shell layer and the second shell layer. On one hand, silicon volume expansion is physically limited through a high-strength rigid framework; on the other hand, an ion / electron synergistic conduction functional interface layer is constructed, and unification of stress buffering, interface stability and rapid dynamics is achieved.

The invention discloses a reaction device for cleaning the surface of a silicon carbide ring, and relates to the technical field of polycrystalline silicon production. Comprising a reaction assembly, the reaction assembly comprises a tank body and further comprises a lifting assembly, the lifting assembly comprises an annular block and a mounting plate, the annular block is rotatably arranged in the tank body, an annular gear is fixed below the annular block, the mounting plate is fixed in the tank body, and a plurality of threaded rods are rotatably arranged between the mounting plate and the bottom of the tank body; driven gears are fixed to the ends of the multiple threaded rods, a lifting motor is fixed to the bottom of the tank body, an output shaft of the lifting motor is connected with the threaded rods through couplings, a lifting circular plate is connected to the multiple threaded rods in a threaded mode, a placing assembly is arranged on the lifting circular plate, a circulating assembly is arranged in the tank body, and a plurality of rotating assemblies are arranged above the tank body; the contact area with the circular ring plate can be reduced, meanwhile, the rubber block can drive the silicon carbide ring to rotate, the contact part is prevented from being blocked, and the cleaning efficiency of the silicon carbide ring is improved.

The utility model provides a silicon carbide powder pickling device, which relates to the field of silicon carbide processing, and comprises a plurality of supporting legs, the outer surface of each supporting leg is fixedly connected with a first bracket, and the equipment comprises a transmission system consisting of a first motor, a transmission rod, a rotating disc, a rotating rod, a push-pull rod, a limiting bracket, a transmission arm and the like. Complex and accurate relative movement of the first bulkhead and the second bulkhead is achieved, compared with existing equipment, the transmission design can more effectively break the agglomeration phenomenon of powder in the acid pickling process, it is ensured that each powder can be fully exposed in acid liquor, the uniformity and thoroughness of acid pickling are greatly improved, and the production efficiency is improved. By means of the synergistic effect, the powder and the acid liquor can be more fully mixed within a shorter time, the pickling reaction process is accelerated, the pickling efficiency is remarkably improved, the powder can be promoted to rapidly pass through the screen through the motion modes of swinging, vibration and the like of the partition frame, and the period of the whole pickling technological process is greatly shortened.

A process for producing solar grade silicon from silica sand employs a plurality of plasma furnaces to perform a sequence of chemical reactions together with other process steps to produce solar grade silicon. The plasma furnace generates a stable dirty-air, donut-shaped plasma into which particulate matter can be introduced. The plasma in the first two stages is formed by gases from the chemical reactions and in the third from inert gasses. Cyclone separators are used to extract particulates from the plasma in an inert gas that prevents reverse reactions as the particulate cools.

Disclosed is an apparatus for the production of silicon carbide which comprises a heatable reactor (1) which has a feed opening (4) on its upper side for continuous feeding with a precursor (7), an outlet opening (5) on its lower side for the continuous exit of silicon carbide (10) formed in the reactor (1) from the precursor, and an internal space (3) between the feed opening (4) and the outlet opening (5), wherein the feed opening, outlet opening and internal space are arranged such that the precursor and silicon carbide can pass through the internal space (3) falling from the feed opening (4) to the outlet opening (5).

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes for making SiC boules and SiC wafers utilizing such high purity SiOC and SiC.

The present invention belongs to the technical field of composite silicon-based negative electrode materials and discloses a composite silicon-based negative electrode material, a preparation method, and a solid-state battery. The composite silicon-based negative electrode material comprises a graphite substrate and silicon carbide nanowires and nanosilicon particles attached to the surface of the graphite substrate. The silicon carbide nanowires are interwoven to form a network structure, and the nanosilicon particles are dispersed in the network structure. The nanosilicon particles are dispersed in the network of interwoven silicon carbide nanowires, presenting a porous structure similar to that of reinforced concrete. The porous structure provides space for volume expansion, mitigating damage to the electrode structure caused by volume expansion during lithium insertion and extraction of the silicon-based negative electrode. At the same time, the one-dimensional silicon carbide therein, due to its high mechanical strength, can mitigate damage to the electrode structure caused by long-term cycling of the silicon negative electrode, thereby improving the mechanical properties of the silicon negative electrode and thus improving the cycling performance of the silicon electrode.

The invention belongs to the technical field of powder preparation, and relates to a preparation method of submicron 3C-SiC powder, which comprises the following steps: (1) mixing silicon powder, a carbon-containing raw material and a fluorine-containing raw material according to a certain proportion, fully ball-milling and uniformly mixing the powder and then drying, (2) putting the dried powder into an atmosphere furnace, introducing argon atmosphere, heating to 1400-1500 DEG C, preserving heat for 1-3 hours, and cooling to room temperature to obtain the submicron 3C-SiC powder. And (3) putting the reacted powder into a muffle furnace, and carrying out carbon removal treatment, so as to obtain the high-purity 3C-SiC powder. And the prepared powder is uniform in morphology and granularity and relatively high in purity. The method is simple, has low requirements on instruments and equipment, and is suitable for batch production. The 3C-SiC powder synthesized and prepared through the method is uniform in particle size (about 130 nm) and special in morphology, and a spherical structure is formed. The method is relatively simple in preparation process and convenient to operate, and lays a certain foundation for industrial production.

A method is disclosed comprising providing a carbonaceous substrate; performing a chemical vapor deposition process on the carbonaceous substrate using a mixture of precursor gasses comprising a silicon precursor gas comprising trichlorosilane, and a carbon precursor gas selected from carbon-carbon double bond hydrocarbons and carbon-carbon triple bond hydrocarbons; and via said chemical vapor deposition process, forming a polycrystalline cubic silicon carbide layer with crystallographic orientation.

The invention belongs to the technical field of preparation of high-temperature heat-insulating and electromagnetic wave-absorbing materials, and relates to a bamboo-like silicon carbide nanowire based on freeze-dried vegetables / fruits and a preparation method and application of the bamboo-like silicon carbide nanowire based on the freeze-dried vegetables / fruits, and the preparation method comprises the following steps: putting the vegetables / fruits in a freeze dryer to obtain the freeze-dried vegetables / fruits; putting the freeze-dried vegetables / fruits into a high-temperature tubular furnace for carbonization to obtain a carbon template; putting the carbon template and a silicon source into a graphite crucible, putting the graphite crucible into a high-temperature tubular furnace, and calcining to obtain the bamboo-like silicon carbide nanowire based on the freeze-dried vegetables / fruits. The bamboo-like silicon carbide nanowire prepared by the method has excellent high-temperature heat insulation property and remarkable broadband electromagnetic wave absorption property, so that the enhancement of double functions of heat insulation and wave absorption is synergistically realized on the basis of a single material. The preparation process is simple and stable in flow, good in repeatability, green in raw material and extremely low in cost, and the problems of collapse and atrophy of the material structure caused by high temperature are solved.

The invention relates to the technical field of silicon carbide synthesis, and discloses a synthesis method capable of improving solid-phase synthesis silicon carbide discharge rate and a silicon carbide synthesis furnace, the synthesis method comprises the following steps: crushing, screening, cleaning and drying a silicon carbide product block to obtain silicon carbide powder; the preparation method comprises the following steps: mixing silicon carbide powder, carbon powder, silicon powder and polytetrafluoroethylene powder by utilizing a high-energy ball milling technology and an ultrasonic-assisted mixing technology to obtain a mixed raw material; uniformly paving the mixed raw material in a graphite crucible, putting the graphite crucible into a silicon carbide synthesis furnace, and carrying out solid-phase synthesis of silicon carbide on the basis of optimal synthesis parameters output by a parameter optimization algorithm. According to the method, the production cost of solid-phase synthesis of silicon carbide can be effectively reduced, the yield of silicon carbide is remarkably improved, energy consumption and raw material waste in the production process are reduced, and the quality and purity of the silicon carbide product can be improved by accurately controlling synthesis parameters.

The embodiments disclosed herein relate to methods and systems for efficient Joule heating of powder materials, and in particular, Joule heating of a powder feedstock that is mixed while the powder is Joule heated. The methods and systems apply to powder materials comprising carbon, silicon-material powders, and plastic powders. The Joule heating of this invention can control the degree of carbon graphitization, the degree of silicon-material crystallization, and the carbonization of plastics and polymers.

The present invention relates to a method for preparing hollow spherical silicon carbide powder. A green body is prepared by mixing silica sol and plant carbon source. After partial carbonization treatment of the green body, it is placed in a microwave sintering furnace for microwave sintering at 700 - 1000 °C to obtain the hollow spherical silicon carbide powder. The present invention utilizes the forming characteristics of silica sol gel to fully mix the plant carbon source with nano-scale silica sol; the plant carbon source is prone to release a large amount of gas when heated. By using rapid microwave heating, the organic matter in the plant carbon source volatilizes rapidly, generating instantaneous microwave plasma. The plant carbon source quickly becomes a molten state, and the gas expands rapidly, forming a cavity, and then a ceramic microsphere with a hollow spherical structure is prepared. The present invention can be directly used for preparing porous silicon carbide ceramics, porous silicon carbide coatings, catalyst carriers, high-performance microwave absorbing materials, heat insulation materials, etc., and has extremely high application prospects and development space.

The invention discloses a method for preparing high-zirconium-content silicon carbide from lignite, and relates to a preparation method of high-zirconium-content silicon carbide. The invention aims to solve the problems of non-uniform product distribution and poor performance improvement effect caused by the fact that zirconium compounds are introduced by adding the zirconium compounds into existing silicon carbide in the later period. The method comprises the following steps: 1, preparing a zirconic acid organic matter solution; 2, uniformly mixing a silicon source and lignite powder, adding the mixture into the zirconic acid organic matter solution, quickly adding deionized water, and stirring and reacting at room temperature; 3, high-temperature calcination; 4, removing carbon; and 5, grinding, sieving and carrying out ultrasonic treatment. The method is used for preparing the high-zirconium-content silicon carbide from the lignite.

The invention concerns the field of noble metal processing and relates to a platinoid-silicide- and silicon-carbide-containing mixture, which is recycled from platinoide- and SiC-containing materials, enriched, concentrated and / or cleaned, and to a method for producing same. The problem addressed by the present invention consists in specifying a platinoid-silicide- and silicon-carbide-containing mixture in which the platinoid-silicides are present at high yield and / or high purity and which is produced from platinoid- and SiC-containing materials by way of a simple and cost-effective method. The problem is solved by a platinoid-silicide- and silicon-carbide-containing mixture in which platinoids are present at a concentration of at least 1 mass % and in which, in addition to silicon carbide particles and silicon carbide particle agglomorates, the platinoids are present as platinoid silicide particles and / or as agglomerates of platinoid silicide particles, and or platinoid silicide particles bond the silicon carbide particles into an agglomerate and / or are arranged on the surface of the silicon carbide particles, wherein the silicon carbide of the silicon carbide particles is present as technically pure silicon carbide.

The utility model provides a material recovery device suitable for silicon carbide production, which comprises a main body frame, a bearing part, a precipitation washing part, a drying part, a carbon removal part, a temporary storage part and a control part, and the main body frame comprises a bearing seat, a base, a transfer carrier plate, a washing seat, a drying treatment seat and a precipitation box, the receiving part comprises a fixed funnel, a movable funnel, an electric telescopic rod I, a connecting hose and a transfer groove pipe, the precipitation washing part comprises a transfer mechanism, a cleaning mechanism and a collection auxiliary mechanism, the drying part comprises a driving mechanism, a receiving mechanism and a drying mechanism, and the carbon removal part comprises a roll shaft III, an exhaust pipe, an electric heating wire, a fan III and an air inlet pipe. The temporary storage part comprises an electric roll shaft, a second electric lifting device, a fourth roll shaft and a storage plate. Compared with a traditional micro-powder wastewater treatment device, a large amount of space is saved; the energy consumption is far lower than that of a traditional micro-powder wastewater treatment device, the recovery efficiency is greatly improved, and the recycling of materials is facilitated.

The invention provides a deep carbon removal method for silicon carbide powder based on plasma-assisted composite catalytic oxidation, which is characterized by comprising the following steps: S1, cleaning and drying silicon carbide powder raw materials with acid to obtain pretreated silicon carbide powder; s2, immersing the pretreated silicon carbide powder into a cobalt nitrate, manganese nitrate or ferric nitrate solution, and carrying out dispersion treatment, evaporation treatment and calcination treatment to obtain a metal oxide / silicon carbide composite catalyst; s3, placing the metal oxide / silicon carbide composite catalyst in a radio frequency plasma reactor, and carrying out an oxidation reaction; and S4, after the oxidation reaction is finished, carrying out post-treatment to obtain the carbon-removed silicon carbide powder. The carbon removal effect is obviously better than that of a traditional high-temperature oxidation method.

To provide a method for producing high-purity silicon carbide powder with a simple process.SOLUTION: A method for producing high-purity silicon carbide powder includes performing: a step of providing raw material silicon carbide powder having a silicon carbide purity of 90.0 wt.% or more and less than 99.0 wt.%; a first heating step of heating the raw material silicon carbide powder in an inert atmosphere at 1800 to 2200°C while bringing the raw material silicon carbide powder into contact with a carbon sheet to obtain an intermediate silicon carbide powder; and a second heating step of heating the intermediate silicon carbide powder in an oxidizing atmosphere at 500 to 700°C to obtain the high-purity silicon carbide powder having the silicon carbide purity of 99.0 wt.% or more.SELECTED DRAWING: Figure 1

A negative electrode active material for a lithium secondary battery, according an embodiment of the present invention, comprises a silicon carbon (Si / C) composite having a modulus value (A) of 15-25 GPa and a hardness value (B) of 2500-5000 MPa.

This is a self-replicating nanofactory which uses nano-electron lithography to assemble copies of itself along with nanoscale precise products. The device is 100 nm×100 nm×100 nm in size making it a type of nanomachine that assembles products being a nanofactory. The device is composed of carbon nanotubes, silicon carbide and silica which are naturally available in the form of carbon dioxide and silicon dioxide on many planets and asteroids in the universe. This device uses sugar to power itself as the carbon based nanomachines being cells and bacteria use as a power source which can be naturally sourced in a environment as well.NameCityStateCountryWestPendletonINUSNanoroboticsLLCAssignee:West Nanorobotics LLCAppl. No.:63 / 474,335Filed:Aug. 9, 2022

The present invention relates to a composite powder for use in a battery anode, the composite powder comprising composite particles comprising a carbonaceous matrix material having silicon-based particles embedded therein and carbon nanotubes, the surfaces of the composite particles being at least partially covered by the carbon nanotubes.

Please delete the Abstract in its entirety and substitute therefor the following new A silicon carbide powder contains free carbon in a content of 0.04 mass % or less, in which a ratio of silicon atoms to carbon atoms (Si / C molar ratio) is 1.00 to 1.02. The silicon carbide powder can be produced by a method including a combustion synthesis step of preheating a mixed powder containing a metal silicon powder and a carbon powder having a Si / C molar ratio of 1.00 or more and 1.02 or less at a temperature of 900° C. to 1300° C. under an inert atmosphere, and igniting a part of the mixed powder to perform combustion synthesis to obtain a crude silicon carbide powder; and a heating step of heating the crude silicon carbide powder at a temperature of 2000° C. to 2500° C. under an inert atmosphere. In addition, the silicon carbide powder can also be obtained, without undergoing the heating step, by preheating the mixed powder at a temperature of 900° C. to 1300° C. under an atmospheric pressure and an inert atmosphere, and igniting a part of the mixed powder to perform combustion synthesis.

Method and systems for flash Joule heating of liquids, particularly, methods and systems for flash Joule heating of liquids for gas capture, carbon / graphene templates (including customizable freestanding carbon / graphene templates), and carbon nanotubes.